Showing 1–50 of 94 results for author: Tsymbal, E

Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions:Spin polarization and its relevance to tunneling magnetoresistance

Authors: Kartik Samanta, Evgeny Y. Tsymbal

Abstract: Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculati… ▽ More Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully crystalline MTJs where spin-dependent tunneling is controlled by the symmetry group of wave vector. In this work, using first-principles quantum-transport calculations, we explore spin-dependent tunneling in fully crystalline SrRuO3/SrTiO3/SrRuO3 (001) MTJs and predict tunneling magnetoresistance (TMR) of nearly 3000%. We demonstrate that this giant TMR effect is driven by symmetry matching (mismatching) of the incoming and outcoming Bloch states in the SrRuO3 (001) electrodes and evanescent states in the SrTiO3 (001) barrier. We argue that under the conditions of symmetry-controlled transport, spin polarization, whatever definition is used, is not a relevant measure of spin-dependent tunneling. In the presence of diffuse scattering, however, e.g. due to localized states in the band gap of the tunnel barrier, symmetry matching is no longer valid and TMR in SrRuO3/SrTiO3/SrRuO3 (001) MTJs is strongly reduced. Under these conditions, the spin polarization of the interface transmission function becomes a valid measure of TMR. These results provide an important insight into understanding and optimizing TMR in all-oxide MTJs. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Comments: 10 pages, 6 figures

Antiferromagnetic Tunnel Junctions for Spintronics

Authors: Ding-Fu Shao, Evgeny Y. Tsymbal

Abstract: Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM Néel vector is used as a state variable. Efficient electric control and detection of the Néel vector are critical for spintronic applications. This review article features fundamental properties of AFM tunnel junctions (AFMTJs) as spintronic devices where such electric control and detection can be realized.… ▽ More Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM Néel vector is used as a state variable. Efficient electric control and detection of the Néel vector are critical for spintronic applications. This review article features fundamental properties of AFM tunnel junctions (AFMTJs) as spintronic devices where such electric control and detection can be realized. We emphasize critical requirements for observing a large tunneling magnetoresistance (TMR) effect in AFMTJs with collinear and noncollinear AFM electrodes, such as a momentum-dependent spin polarization and Néel spin currents. We further discuss spin torques in AFMTJs that are capable of Néel vector switching. Overall, AFMTJs have potential to become a new standard for spintronics providing larger magnetoresistive effects, few orders of magnitude faster switching speed, and much higher packing density than conventional magnetic tunnel junctions (MTJs). △ Less

Submitted 25 April, 2024; v1 submitted 20 December, 2023; originally announced December 2023.

Comments: An invited review for recent progress of antiferromagnetic tunnel junctions

Journal ref: npj Spintronics 2, 13 (2024)

X-Type Antiferromagnets

Authors: Shui-Sen Zhang, Zi-An Wang, Bo Li, Shu-Hui Zhang, Rui-Chun Xiao, Lan-Xin Liu, X. Luo, W. J. Lu, Mingliang Tian, Y. P. Sun, Evgeny Y. Tsymbal, Haifeng Du, Ding-Fu Shao

Abstract: Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered cry… ▽ More Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spintronic applications. Here, we introduce cross-chain antiferromagnets, dubbed X-type antiferromagnets, as an uncharted class of magnetically ordered crystals, where the stacking of two magnetic sublattices form an orthogonal pattern of intersecting atomic chains. These largely unexplored X-type antiferromagnets reveal unique spin-dependent transport properties that are not present in conventional magnets. Using $β$-Fe2PO5 as a representative example of such X-type antiferromagnets, we predict the emergence of sublattice-selective spin-polarized transport, where one magnetic sublattice is conducting, while the other is not. As a result, spin torque can be exerted solely on a single sublattice, leading to unconventional ultrafast dynamics of the Nèel vector capable of deterministic switching of the antiferromagnetic domains. Our work uncovers a previously overlooked type of magnetic moment alignment in antiferromagnets and reveals sublattice-selective physical properties promising for high-performance spintronic applications. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Authors: Kartik Samanta, Yuan-Yuan Jiang, Tula R. Paudel, Ding-Fu Shao, Evgeny Y. Tsymbal

Abstract: Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional property is tunneling magnetoresistance (TMR) that is a change in MTJ's resistance when magnetization of the two electrodes alters from parallel to antiparallel.… ▽ More Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional property is tunneling magnetoresistance (TMR) that is a change in MTJ's resistance when magnetization of the two electrodes alters from parallel to antiparallel. Here, we demonstrate that TMR can occur in MTJs with a single FM electrode, provided that the counter electrode is an antiferromagnetic (AFM) metal that supports a spin-split band structure and/or a Néel spin current. Using RuO$_{2}$ as a representative example of such antiferromagnet and CrO$_{2}$ as a FM metal, we design all-rutile RuO$_{2}$/TiO$_{2}$/CrO$_{2}$ MTJs to reveal a non-vanishing TMR. Our first-principles calculations predict that magnetization reversal in CrO$_{2}$ significantly changes conductance of the MTJs stacked in the (110) or (001) planes. The predicted giant TMR effect of about 1000% in the (110) oriented MTJs stems from spin-dependent conduction channels in CrO$_{2}$ (110) and RuO$_{2}$ (110), whose matching alters with CrO$_{2}$ magnetization orientation, while TMR in the (001) oriented MTJs originates from the Néel spin currents and different effective TiO$_{2}$ barrier thickness for the two magnetic sublattices that can be engineered by the alternating deposition of TiO$_{2}$ and CrO$_{2}$ monolayers. Our results demonstrate a possibility of a sizable TMR in MTJs with a single FM electrode and offer a practical test for using the altermagnet RuO$_{2}$ in functional spintronic devices. △ Less

Submitted 3 October, 2023; originally announced October 2023.

Comments: 7 pages, 5 Figures

Prediction of Giant Tunneling Magnetoresistance in RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (110) Antiferromagnetic Tunnel Junctions

Authors: Yuan-Yuan Jiang, Zi-An Wang, Kartik Samanta, Shu-Hui Zhang, Rui-Chun Xiao, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal, Ding-Fu Shao

Abstract: Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a… ▽ More Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predict the emergence of a giant tunneling magnetoresistance (TMR) effect in a wide energy window, a series of barrier layer thicknesses, and different interface terminations, indicating the robustness of this effect. We show that the predicted TMR cannot be explained in terms of the global transport spin-polarization of RuO$_{2}$ (110) but is well understood based on matching the momentum-dependent spin-polarized conduction channels of the two RuO$_{2}$ (110) electrodes. We predict oscillations of TMR with increasing barrier thickness, indicating a non-negligible contribution from the perfectly epitaxial interfaces. Our work helps the understanding of the physics of TMR in AFMTJs and aids in realizing efficient AFM spintronic devices. △ Less

Submitted 8 November, 2023; v1 submitted 5 September, 2023; originally announced September 2023.

Comments: The colorbar of originl Fig. 2a was not set properly, which is corrected in this version. To be published in PRB

Magnetic Antiskyrmions in Two-Dimensional van der Waals Magnets Engineered by Layer Stacking

Authors: Kai Huang, Edward Schwartz, Ding-Fu Shao, Alexey A. Kovalev, Evgeny Y. Tsymbal

Abstract: Magnetic skyrmions and antiskyrmions are topologically protected quasiparticles exhibiting a whirling spin texture in real space. Antiskyrmions offer some advantages over skyrmions as they are expected to have higher stability and can be electrically driven with no transverse motion. However, unlike the widely investigated skyrmions, antiskyrmions are rarely observed due to the required anisotropi… ▽ More Magnetic skyrmions and antiskyrmions are topologically protected quasiparticles exhibiting a whirling spin texture in real space. Antiskyrmions offer some advantages over skyrmions as they are expected to have higher stability and can be electrically driven with no transverse motion. However, unlike the widely investigated skyrmions, antiskyrmions are rarely observed due to the required anisotropic Dzyaloshinskii-Moriya interaction (DMI). Here we propose to exploit the recently demonstrated van der Waals (vdW) assembly of two-dimensional (2D) materials that breaks inversion symmetry and creates conditions for anisotropic DMI. Using a 2D vdW magnet CrI${}_3$ as an example, we demonstrate, based on density functional theory (DFT) calculations, that this strategy is a promising platform to realize antiskyrmions. Polar layer stacking of two centrosymmetric magnetic monolayers of CrI${}_3$ efficiently lowers the symmetry, resulting in anisotropic DMI that supports antiskyrmions. The DMI is reversible by switching the ferroelectric polarization inherited from the polar layer stacking, offering the control of antiskyrmions by an electric field. Furthermore, we find that the magnetocrystalline anisotropy and DMI of CrI${}_3$ can be efficiently modulated by Mn do**, creating a possibility to control the size of antiskyrmions. Using atomistic spin dynamics simulations with the parameters obtained from our DFT calculations, we predict the formation of antiskyrmions in a Cr${}_{0.88}$Mn${}_{0.12}$I${}_3$ bilayer and switching their spin texture with polarization reversal. Our results open a new direction to generate and control magnetic antiskyrmions in 2D vdW magnetic systems. △ Less

Submitted 28 July, 2023; originally announced July 2023.

Comments: 10 pages, 6 figures

Tunneling valley Hall effect driven by tilted Dirac fermions

Authors: Shu-Hui Zhang, Ding-Fu Shao, Zi-An Wang, ** Yang, Wen Yang, Evgeny Y. Tsymbal

Abstract: Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall effect (TVHE) driven by tilted Dirac fermions in all-in-one tunnel junctions based on a two-dimensional (2D) valley material. Different do** of the ele… ▽ More Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall effect (TVHE) driven by tilted Dirac fermions in all-in-one tunnel junctions based on a two-dimensional (2D) valley material. Different do** of the electrode and spacer regions in these tunnel junctions results in momentum filtering of the tunneling Dirac fermions, generating a strong transverse valley Hall current dependent on the Dirac-cone tilting. Using the parameters of an existing 2D valley material, we demonstrate that such a TVHE is much stronger than that induced by the intrinsic Berry curvature mechanism reported previously. Finally, we predict that resonant tunneling can occur in a tunnel junction with properly engineered device parameters such as the spacer width and transport direction, providing significant enhancement of the valley Hall angle. Our work opens a new approach to generate valley polarization in realistic valleytronic systems. △ Less

Submitted 19 June, 2023; originally announced June 2023.

Comments: 7 pages, 3 figures

Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes

Authors: Gautam Gurung, Ding-Fu Shao, Evgeny Y. Tsymbal

Abstract: Recent theoretical predictions and experimental demonstrations of a large tunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunnel junctions (AFMTJs) offer a new paradigm for information technologies where the AFM Nèel vector serves as a state variable. A large TMR is beneficial for the applications. Here, we predict the emergence of an extraordinary TMR (ETMR) effect in AFMTJs u… ▽ More Recent theoretical predictions and experimental demonstrations of a large tunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunnel junctions (AFMTJs) offer a new paradigm for information technologies where the AFM Nèel vector serves as a state variable. A large TMR is beneficial for the applications. Here, we predict the emergence of an extraordinary TMR (ETMR) effect in AFMTJs utilizing noncollinear AFM antiperovskite XNMn$_{3}$ (X = Ga, Sn,...) electrodes and a perovskite oxide ATiO$_{3}$ (A = Sr, Ba,...) barrier layer. The ETMR effect stems from the perfectly spin-polarized electronic states in the AFM antiperovskites that can efficiently tunnel through the low-decay-rate evanescent states of the perovskite oxide while preserving their spin state. Using an GaNMn$_{3}$/SrTiO$_{3}$/GaNMn$_{3}$ (001) AFMTJ as a representative example, we demonstrate a giant TMR ratio exceeding $10^{4}$% and originating from the ETMR effect. These results are promising for the efficient detection and control of the Nèel vector in AFM spintronics. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Switchable anomalous Hall effects in polar-stacked 2D antiferromagnet MnBi2Te4

Authors: Tengfei Cao, Ding-Fu Shao, Kai Huang, Gautam Gurung, Evgeny Y. Tsymbal

Abstract: Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to realize novel electronic, magnetic, and transport properties of 2D vdW materials switchable by induced electric polarization. Here, based on symmetry analyses… ▽ More Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to realize novel electronic, magnetic, and transport properties of 2D vdW materials switchable by induced electric polarization. Here, based on symmetry analyses and density-functional calculations, we explore the emergence of the anomalous Hall effect (AHE) in antiferromagnetic MnBi2Te4 films assembled by polar layer stacking. We demonstrate that breaking PT symmetry in an MnBi2Te4 bilayer makes this 2D material magnetoelectric and produces a spontaneous AHE switchable by electric polarization. We find that reversable polarization at one of the interfaces in a three-layer MnBi2Te4 film drives a metal-insulator transition, as well as switching between an AHE and quantum AHE (QAHE). Finally, we predict that engineering an interlayer polarization in a three-layer MnBi2Te4 film allows converting MnBi2Te4 from a trivial insulator to a Chern insulator. Overall, our work emphasizes the emergence of quantum-transport phenomena in 2D vdW antiferromagnets by polar layer stacking, which do not exist in this material in the bulk or bulk-like thin-film forms. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Unconventional polarization switching mechanism in (Hf, Zr)O2 ferroelectrics

Authors: Yao Wu, Yuke Zhang, Jie Jiang, Limei Jiang, Minghua Tang, Yichun Zhou, Min Liao, Qiong Yang, Evgeny Y. Tsymbal

Abstract: HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal performance of these devices. Here, a generalized solid-state variable cell nudged elastic band (VCNEB) method is employed to predict the switching pathway associated wi… ▽ More HfO$_{2}$-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal performance of these devices. Here, a generalized solid-state variable cell nudged elastic band (VCNEB) method is employed to predict the switching pathway associated with domain-wall motion in (Hf, Zr)O$_{2}$ ferroelectrics. It is found that the polarization reversal pathway, where three-fold coordinated O atoms pass across the nominal unit-cell boundaries defined by the Hf/Zr atomic planes, is energetically more favorable than the conventional pathway where the O atoms do not pass through these planes. This finding implies that the polarization orientation in the orthorhombic Pca2$_{1}$ phase of HfO$_{2}$ nd its derivatives is opposite to that normally assumed, predicts the spontaneous polarization magnitude of about 70 $μ$C/cm$^{2}$ that is nearly 50% larger than the commonly accepted value, signifies a positive intrinsic longitudinal piezoelectric coefficient, and suggests growth of ferroelectric domains, in response to an applied electric field, structurally reversed to those usually anticipated. These results provide important insights into the understanding of ferroelectricity in HfO$_{2}$-based ferroelectrics. △ Less

Submitted 3 April, 2023; v1 submitted 15 January, 2023; originally announced January 2023.

Comments: 34 pages, 28 figures

Néel Spin Currents in Antiferromagnets

Authors: Ding-Fu Shao, Yuan-Yuan Jiang, Jun Ding, Shu-Hui Zhang, Zi-An Wang, Rui-Chun Xiao, Gautam Gurung, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal

Abstract: Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through dif… ▽ More Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e. staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intra-sublattice coupling (hop**) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO$_{2}$ and Fe$_{4}$GeTe$_{2}$ as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin-polarization produce a sizable field-like STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Lett. 130, 216702 (2023)

Stabilizing polar phases in binary metal oxides by hole do**

Authors: Tengfei Cao, Guodong Ren, Ding-Fu Shao, Evgeny Y. Tsymbal, Rohan Mishra

Abstract: The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial growth, alloying, or defect engineering. Here, we propose hole do** plays a key role in stabilizing the polar phases in binary metal oxides. Using… ▽ More The recent observation of ferroelectricity in the metastable phases of binary metal oxides, such as HfO2, ZrO2, Hf0.5Zr0.5O2, and Ga2O3, has garnered a lot of attention. These metastable ferroelectric phases are typically stabilized through epitaxial growth, alloying, or defect engineering. Here, we propose hole do** plays a key role in stabilizing the polar phases in binary metal oxides. Using first-principles density-functional-theory calculations, we show that holes in these oxides mainly occupy one of the two oxygen sublattices. This hole localization, which is more pronounced in the polar phase than in the nonpolar phase, lowers the electrostatic energy of the system, and makes the polar phase more stable at sufficiently large concentrations. We demonstrate that this electrostatic mechanism is responsible for stabilization of the ferroelectric phase of HfO2 aliovalently doped with elements that introduce holes to the system, such as La and N. Finally, we show that the spontaneous polarization in HfO2 is robust to hole do**, and a large polarization persists even under a high concentration of holes. △ Less

Submitted 1 March, 2023; v1 submitted 19 September, 2022; originally announced September 2022.

Spin-Neutral Tunneling Anomalous Hall Effect

Authors: Ding-Fu Shao, Shu-Hui Zhang, Rui-Chun Xiao, Zi-An Wang, W. J. Lu, Y. P. Sun, Evgeny Y. Tsymbal

Abstract: Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagne… ▽ More Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate that, in contrast to this common expectation, a spin-neutral tunneling AHE (TAHE), i.e. a TAHE driven by spin-neutral currents, can be realized in an antiferromagnetic (AFM) tunnel junction where an AFM electrode with a non-spin-degenerate Fermi surface and a normal metal electrode are separated by a non-magnetic barrier with strong spin-orbit coupling (SOC). The symmetry mismatch between the AFM electrode and the SOC barrier results in an asymmetric spin-dependent momentum filtering of the spin-neutral longitudinal current generating the transverse Hall current in each electrode. We predict a sizable spin-neutral TAHE in an AFM tunnel junction with a RuO$_{2}$-type AFM electrode and a SnTe-type SOC barrier and show that the Hall currents are reversible by the Néel vector switching. With the Hall angle being comparable to that in conventional AHE bulk materials, the predicted spin-neutral TAHE can be used for the Néel vector detection in antiferromagnetic spintronics. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Ferroelectric control of magnetic skyrmions in two-dimensional van der Waals heterostructures

Authors: Kai Huang, Ding-Fu Shao, Evgeny Y. Tsymbal

Abstract: Magnetic skyrmions are chiral nanoscale spin textures which are usually induced by Dzyaloshinskii-Moriya interaction (DMI). Recently, magnetic skyrmions have been observed in two-dimensional (2D) van der Waals (vdW) ferromagnetic materials, such as Fe$_{3}$GeTe$_{2}$. The electric control of skyrmions is important for their potential application in low-power memory technologies. Here, we predict t… ▽ More Magnetic skyrmions are chiral nanoscale spin textures which are usually induced by Dzyaloshinskii-Moriya interaction (DMI). Recently, magnetic skyrmions have been observed in two-dimensional (2D) van der Waals (vdW) ferromagnetic materials, such as Fe$_{3}$GeTe$_{2}$. The electric control of skyrmions is important for their potential application in low-power memory technologies. Here, we predict that DMI and magnetic skyrmions in a Fe$_{3}$GeTe$_{2}$ monolayer can be controlled by ferroelectric polarization of an adjacent 2D vdW ferroelectric In$_{2}$Se$_{3}$. Based on density functional theory and atomistic spin-dynamics modeling, we find that the interfacial symmetry breaking produces a sizable DMI in a Fe$_{3}$GeTe$_{2}$/In$_{2}$Se$_{3}$ vdW heterostructure. We show that the magnitude of DMI can be controlled by ferroe-lectric polarization reversal, leading to creation and annihilation of skyrmions. Furthermore, we find that the sign of DMI in a In$_{2}$Se$_{3}$/Fe$_{3}$GeTe$_{2}$/In$_{2}$Se$_{3}$ heterostructure changes with ferroelectric switching reversing the skyrmion chirality. The predicted electrically controlled skyrmion formation may be interesting for spintronic applications. △ Less

Submitted 1 April, 2022; v1 submitted 23 February, 2022; originally announced February 2022.

Journal ref: Nano Lett. 2022

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Authors: Jianting Dong, Xinlu Li, Gautam Gurung, Meng Zhu, Peina Zhang, Fanxing Zheng, Evgeny Y. Tsymbal, Jia Zhang

Abstract: Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals,… ▽ More Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices. △ Less

Submitted 27 March, 2022; v1 submitted 13 December, 2021; originally announced December 2021.

Oxide two-dimensional electron gas with high mobility at room-temperature

Authors: Kitae Eom, Hanjong Paik, **sol Seo, Neil Campbell, Evgeny Y. Tsymbal, Sang Ho Oh, Mark Rzchowski, Darrell G. Schlom, Chang-beom Eom

Abstract: The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO… ▽ More The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. We achieved this by combining a thick BSO buffer layer with an ex-situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak-beam dark field imaging and in-line electron holography technique, we reveal a reduction of the threading dislocation density, and provide direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface. Our work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Comments: 21 pages, 5 figures

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Authors: J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. Gao, T. Tybell, V. Gopalan, X. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom

Abstract: The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry… ▽ More The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Authors: Yu Yun, Pratyush Buragohain, Ming Li, Zahra Ahmadi, Yizhi Zhang, Xin Li, Haohan Wang, Lingling Tao, Haiyan Wang, Jeffrey E. Shield, Evgeny Y. Tsymbal, Alexei Gruverman, Xiaoshan Xu

Abstract: Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high den… ▽ More Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 μC/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications. △ Less

Submitted 10 September, 2021; originally announced September 2021.

Journal ref: Nature Materials 21, 903 (2022)

Transport Spin Polarization of Noncollinear Antiferromagnetic Antiperovskites

Authors: Gautam Gurung, Ding-Fu Shao, Evgeny Y. Tsymbal

Abstract: Spin-polarized currents play a key role in spintronics. Recently, it has been found that antiferromagnets with a non-spin-degenerate band structure can efficiently spin-polarize electric currents, even though their net magnetization is zero. Among the antiferromagnetic metals with magnetic space group symmetry supporting this functionality, the noncollinear antiferromagnetic antiperovskites ANMn… ▽ More Spin-polarized currents play a key role in spintronics. Recently, it has been found that antiferromagnets with a non-spin-degenerate band structure can efficiently spin-polarize electric currents, even though their net magnetization is zero. Among the antiferromagnetic metals with magnetic space group symmetry supporting this functionality, the noncollinear antiferromagnetic antiperovskites ANMn$_3$ (A = Ga, Ni, Sn, and Pt) are especially promising. This is due to their high Néel temperatures and a good lattice match to perovskite oxide substrates, offering possibilities of high structural quality heterostructures based on these materials. Here, we investigate the spin polarization of antiferromagnetic ANMn$_3$ metals using first-principles density functional theory calculations. We find that the spin polarization of the longitudinal currents in these materials is comparable to that in widely used ferromagnetic metals, and thus can be exploited in magnetic tunnel junctions and spin transfer torque devices. Moreover, for certain film growth directions, the out-of-plane transverse spin currents with a giant charge-to-spin conversion efficiency can be achieved, implying that the ANMn$_3$ antiperovskites can be used as efficient spin sources. These properties make ANMn$_3$ compounds promising for application in spintronics. △ Less

Submitted 8 December, 2021; v1 submitted 21 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. Materials 5, 124411 (2021)

Tilted spin current generated by the collinear antiferromagnet RuO2

Authors: Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain, Ding-Fu Shao, Hari P. Nair, Jiaxin Sun, Xiyue S. Zhang, David A. Muller, Evgeny Y. Tsymbal, Darrell G. Schlom, Daniel C. Ralph

Abstract: We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transvers… ▽ More We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane dam**-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials. △ Less

Submitted 20 August, 2021; originally announced August 2021.

Journal ref: Nature Electronics 5, 267 (2022)

Spin-neutral currents for spintronics

Authors: Ding-Fu Shao, Shu-Hui Zhang, Ming Li, Chang-Beom Eom, Evgeny Y. Tsymbal

Abstract: Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group s… ▽ More Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO$_{2}$ as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Néel vectors of the two RuO$_{2}$ electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics. △ Less

Submitted 3 December, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Journal ref: Nature Communications 12, 7061 (2021)

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Authors: Shuai Hu, Ding-Fu Shao, Huanglin Yang, Meng Tang, Yumeng Yang, Weijia Fan, Shiming Zhou, Evgeny Y. Tsymbal, Xuepeng Qiu

Abstract: Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiti… ▽ More Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization induced by an in-plane charge current. This spin current drives an out-of-plane anti-dam** torque providing deterministic switching of perpendicular magnetization of an adjacent Ni/Co multilayer. Compared to the conventional spin-orbit torque devices, the observed switching does not need any external magnetic field and requires much lower current density. Our results demonstrate great prospects of exploiting the magnetic spin Hall effect in noncollinear antiferromagnets for low-power spintronics. △ Less

Submitted 16 March, 2021; originally announced March 2021.

Comments: 15 pages, 4 figures

Resonant Band Engineering of Ferroelectric Tunnel Junctions

Authors: **g Su, Xingwen Zheng, Zheng Wen, Tao Li, Shijie Xie, Karin M. Rabe, Xiaohui Liu, Evgeny Y. Tsymbal

Abstract: We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high and low conductance states of an FTJ depending on polarization orientation. Using first-principles modeling based on density fun… ▽ More We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer, acts as a switch controlling high and low conductance states of an FTJ depending on polarization orientation. Using first-principles modeling based on density functional theory, we investigate this phenomenon for a prototypical SrRuO3/BaTiO3/SrRuO3 FTJ with a BaSnO3 monolayer embedded in the BaTiO3 barrier. We show that in such a composite-barrier FTJ, ferroelectric polarization of BaTiO3 shifts the conduction band minimum of the BaSnO3 monolayer above or below the Fermi energy depending on polarization orientation. The resulting switching between direct and resonant tunneling leads to a TER effect with a giant ON/OFF conductance ratio. The proposed resonant band engineering of FTJs can serve as a viable tool to enhance their performance useful for device application. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. B 104, 060101 (2021)

Giant Transport Anisotropy in ReS$_2$ Revealed via Nanoscale Conducting Path Control

Authors: Dawei Li, Shuo Sun, Zhiyong Xiao, **gfeng Song, Ding-Fu Shao, Evgeny Y. Tsymbal, Stephen Ducharme, Xia Hong

Abstract: The low in-plane symmetry in layered 1T'-ReS$_2$ results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS$_2$ by creating directional conducting paths via nanoscale ferroelectri… ▽ More The low in-plane symmetry in layered 1T'-ReS$_2$ results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS$_2$ by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce conductivity switching ratio of >1.5x10$^8$ in the ReS$_2$ channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re-chain can exceed 5.5x10$^4$. Theoretical modeling points to the band origin of the transport anomaly, and further reveals the emergence of a flat band in few-layer ReS$_2$. Our work paves the path for implementing the highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications. △ Less

Submitted 27 September, 2021; v1 submitted 18 January, 2021; originally announced January 2021.

Comments: 13 pages, 4 figures, w. Supplemental Material

Journal ref: Phys. Rev. Lett. 127, 136803 (2021)

Observation of anti-dam** spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Authors: Mahendra DC, Ding-Fu Shao, Vincent D. -H. Hou, P. Quarterman, Ali Habiboglu, Brooks Venuti, Masashi Miura, Brian Kirby, Arturas Vailionis, Chong Bi, Xiang Li, Fen Xue, Yen-Lin Huang, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Weigang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, Shan X. Wang

Abstract: High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic… ▽ More High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic fields. However, an external magnetic field is required to switch the magnetization along x and z-axes via SOT generated by y-spin polarization. Here, we present that the above limitation can be circumvented by unconventional SOT in magnetron-sputtered thin film MnPd3. In addition to the conventional in-plane anti-dam**-like torque due to the y-spin polarization, out-of-plane and in-plane anti-dam**-like torques originating from z-spin and x-spin polarizations, respectively have been observed at room temperature. The spin torque efficiency corresponding to the y-spin polarization from MnPd3 thin films grown on thermally oxidized silicon substrate and post annealed at 400 Deg C is 0.34 - 0.44. Remarkably, we have demonstrated complete external magnetic field-free switching of perpendicular Co layer via unconventional out-of-plane anti-dam**-like torque from z-spin polarization. Based on the density functional theory calculations, we determine that the observed x- and z- spin polarizations with the in-plane charge current are due to the low symmetry of the (114) oriented MnPd3 thin films. Taken together, the new material reported here provides a path to realize a practical spin channel in ultrafast magnetic memory and logic devices. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Van der Waals Multiferroic Tunnel Junctions

Authors: Yurong Su, Xinlu Li, Meng Zhu, Jia Zhang, Long You, Evgeny Y. Tsymbal

Abstract: Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dep… ▽ More Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5) MFTJs exhibit multiple non-volatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for non-volatile memory applications. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Journal ref: Nano Letters(2020)

Interfacial crystal Hall effect reversible by ferroelectric polarization

Authors: Ding-Fu Shao, Jun Ding, Gautam Gurung, Shu-Hui Zhang, Evgeny Y. Tsymbal

Abstract: The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the i… ▽ More The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional theory calculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ and topological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waals heterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed of three-dimensional materials. We show that all three systems reveal a sizable ICHE, while the latter two exhibit a quantum ICHE and ICHE, respectively, reversible with ferroelectric polarization. Our proposal opens an alternative direction for voltage controlled spintronics and offers not yet explored possibilities for functional devices by heterostructure design. △ Less

Submitted 19 February, 2021; v1 submitted 16 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Applied 15, 024057 (2021)

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Authors: Yuke Zhang, Qiong Yang, Lingling Tao, Evgeny Y. Tsymbal, Vitaly Alexandrov

Abstract: The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly… ▽ More The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films, but the fundamental mechanism of ferroelectric polarization in such films remains poorly understood. In this paper, we employ density-functional-theory calculations to investigate structural and polarization properties of the R3m HfO2 phase. We find that the film thickness and in-plane compressive strain effects play a key role in stabilizing the R3m phase leading to robust ferroelectricity of [111]-oriented R3m HfO2. △ Less

Submitted 24 January, 2020; originally announced January 2020.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. Applied 14, 014068 (2020)

Induced Spin-texture at 3$d$ Transition Metal/Topological Insulator Interfaces

Authors: Slimane Laref, Sumit Ghosh, Evgeny Y. Tsymbal, Aurelien Manchon

Abstract: While some of the most elegant applications of topological insulators, such as quantum anomalous Hall effect, require the preservation of Dirac surface states in the presence of time-reversal symmetry breaking, other phenomena such as spin-charge conversion rather rely on the ability for these surface states to imprint their spin texture on adjacent magnetic layers. In this work, we investigate th… ▽ More While some of the most elegant applications of topological insulators, such as quantum anomalous Hall effect, require the preservation of Dirac surface states in the presence of time-reversal symmetry breaking, other phenomena such as spin-charge conversion rather rely on the ability for these surface states to imprint their spin texture on adjacent magnetic layers. In this work, we investigate the spin-momentum locking of the surface states of a wide range of monolayer transition metals (3$d$-TM) deposited on top of Bi$_{2}$Se$_{3}$ topological insulators using first principles calculations. We find an anticorrelation between the magnetic moment of the 3$d$-TM and the magnitude of the spin-momentum locking {\em induced} by the Dirac surface states. While the magnetic moment is large in the first half of the 3$d$ series, following Hund's rule, the spin-momentum locking is maximum in the second half of the series. We explain this trend as arising from a compromise between intra-atomic magnetic exchange and covalent bonding between the 3$d$-TM overlayer and the Dirac surface states. As a result, while Cr and Mn overlayers can be used successfully for the observation of quantum anomalous Hall effect or the realization of axion insulators, Co and Ni are substantially more efficient for spin-charge conversion effects, e.g. spin-orbit torque and charge pum**. △ Less

Submitted 8 June, 2020; v1 submitted 23 January, 2020; originally announced January 2020.

Comments: 5 pages, 7 figures

Two-dimensional antiferroelectric tunnel junction

Authors: Jun Ding, Ding-Fu Shao, Ming Li, Li-Wei Wen, Evgeny Y. Tsymbal

Abstract: Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric mater… ▽ More Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most of existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Due to the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In$_2$X$_3$ (X = S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In$_2$X$_3$ bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a non-volatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In$_2$S$_3$ van der Waals bilayers, and predict giant tunneling electroresistance (TER) effects and multiple non-volatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs. △ Less

Submitted 8 January, 2021; v1 submitted 6 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Lett. 126, 057601 (2021)

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Authors: T. H. Kim, T. R. Paudel, R. J. Green, K. Song, H. -S. Lee, S. -Y. Choi, J. Irwin, B. Noesges, L. J. Brillson, M. S. Rzchowski, G. A. Sawatzky, E. Y. Tsymbal, C. B. Eom

Abstract: Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this dire… ▽ More Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. B 101, 121105 (2020)

Epitaxial antiperovskite/perovskite heterostructures for materials design

Authors: Camilo X. Quintela, Kyung Song, Ding-Fu Shao, Lin Xie, Tianxiang Nan, Tula R. Paudel, Neil Campbell, Xiaoqing Pan, Mark S. Rzchowski, Evgeny Y. Tsymbal, Si-Young Choi, Chang-Beom Eom

Abstract: We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first… ▽ More We demonstrate fabrication of atomically sharp interfaces between nitride antiperovskite Mn$_{3}$GaN and oxide perovskites (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{3}$ (LSAT) and SrTiO$_{3}$ as paradigms of nitride-antiperovskite/oxide-perovskite heterostructures. Using a combination of scanning transmission electron microscopy (STEM), atomic-resolution spectroscopic techniques, and first-principle calculations, we investigated the atomic-scale structure, composition, and boding at the interface. We show that the epitaxial growth between the antiperovskite and perovskite compounds is mediated by a coherent interfacial monolayer that connects the two anti-structures. We anticipate our results to be a major step for the development of functional antiperovskite/perovskite heterostructures opening to harness a combination of their functional properties including topological properties for ultra low power applications. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Unveiling multiferroic proximity effect in graphene

Authors: Fatima Ibrahim, Ali Hallal, Daniel Solis Lerma, Xavier Waintal, Evgeny Y. Tsymbal, Mairbek Chshiev

Abstract: We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by el… ▽ More We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO$_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by electric polarization in the underlying BFO. Based on extracted Hamiltonian parameters obtained from the graphene band structure, we propose a concept of six-resistance device based on exploring multiferroic proximity effect giving rise to significant proximity electro- (PER), magneto- (PMR), and multiferroic (PMER) resistance effects. This finding paves a way towards multiferroic control of magnetic properties in two dimensional materials. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: 20 pages, 4 figures

Journal ref: 2D Materials 7, 015020 (2019)

Magnetoelectric control of topological phases in graphene

Authors: Hiroyuki Takenaka, Shane Sandhoefner, Alexey A. Kovalev, Evgeny Y. Tsymbal

Abstract: Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is envisioned through manipulation of the N$\acute{\rm e}$el vector by spin-orbit torques driven by electric currents. Here we propose a different approach favorable… ▽ More Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which involves the topological electronic states coupled to the AFM order parameter known as the N$\acute{\rm e}$el vector. The control of these states is envisioned through manipulation of the N$\acute{\rm e}$el vector by spin-orbit torques driven by electric currents. Here we propose a different approach favorable for low-power AFM spintronics, where the control of the topological states in a two-dimensional material, such as graphene, is performed via the proximity effect by the voltage induced switching of the N$\acute{\rm e}$el vector in an adjacent magnetoelectric AFM insulator, such as chromia. Mediated by the symmetry protected boundary magnetization and the induced Rashba-type spin-orbit coupling at the interface between graphene and chromia, the emergent topological phases in graphene can be controlled by the N$\acute{\rm e}$el vector. Using density functional theory and tight-binding Hamiltonian approaches, we model a graphene/Cr2O3 (0001) interface and demonstrate non-trivial band gap openings in the graphene Dirac bands asymmetric between the K and K' valleys. This gives rise to an unconventional quantum anomalous Hall effect (QAHE) with a quantized value of $2e^2/h$ and an additional step-like feature at a value close to $e^2/2h$, and the emergence of the spin-polarized valley Hall effect (VHE). Furthermore, depending on the N$\acute{\rm e}$el vector orientation, we predict the appearance and transformation of different topological phases in graphene across the $180^{\circ}$ AFM domain wall, involving the QAHE, the valley-polarized QAHE and the quantum VHE (QVHE), and the emergence of the chiral edge state along the domain wall. These topological properties are controlled by voltage through magnetoelectric switching of the AFM insulator with no need for spin-orbit torques. △ Less

Submitted 26 July, 2019; originally announced July 2019.

Comments: The main text and supplementary material are merged. 9 pages and 6 figures in the main text. 5 pages and 5 figures in supplementary material,

Journal ref: Phys. Rev. B 100, 125156 (2019)

Nonlinear anomalous Hall effect for Néel vector detection

Authors: Ding-Fu Shao, Shu-Hui Zhang, Gautam Gurung, Wen Yang, Evgeny Y. Tsymbal

Abstract: Antiferromagnetic (AFM) spintronics exploits the Néel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidam** spin-orbit torques (SOT) can be used to switch the Néel vector in antiferromagnets with proper symmetries. However, the precise detection of the Néel vector remains a challenging problem. In this letter, we predict that the non… ▽ More Antiferromagnetic (AFM) spintronics exploits the Néel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidam** spin-orbit torques (SOT) can be used to switch the Néel vector in antiferromagnets with proper symmetries. However, the precise detection of the Néel vector remains a challenging problem. In this letter, we predict that the nonlinear anomalous Hall effect (AHE) can be used to detect the Néel vector in most compensated antiferromagnets supporting the antidam** SOT. We show that the magnetic crystal group symmetry of these antiferromagnets combined with spin-orbit coupling produce a sizable Berry curvature dipole and hence the nonlinear AHE. As a specific example, we consider half-Heusler alloy CuMnSb, which Néel vector can be switched by the antidam** SOT. Based on density functional theory calculations, we show that the nonlinear AHE in CuMnSb results in a measurable Hall voltage under conventional experimental conditions. The strong dependence of the Berry curvature dipole on the Néel vector orientation provides a new detection scheme of the Néel vector based on the nonlinear AHE. Our predictions enrich the material platform for studying non-trivial phenomena associated with the Berry curvature and broaden the range of materials useful for AFM spintronics. △ Less

Submitted 25 January, 2020; v1 submitted 24 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Lett. 124, 067203 (2020)

Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions

Authors: A. Alexandrov, M. Ye. Zhuravlev, Evgeny Y. Tsymbal

Abstract: Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous polarization gives rise to the Rashba and Dresselhaus spin-orbit coupling (SOC). For realistic parameters of the model, we predict sizable TAMR measurable experimental… ▽ More Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous polarization gives rise to the Rashba and Dresselhaus spin-orbit coupling (SOC). For realistic parameters of the model, we predict sizable TAMR measurable experimentally. For asymmetric FTJs, which electrodes have different work functions, the built-in electric field affects the SOC parameters and leads to TAMR dependent on ferroelectric polarization direction. The SOC change with polarization switching affects tunneling conductance, revealing a new mechanism of tunneling electroresistance (TER). These results demonstrate new functionalities of FTJs which can be explored experimentally and used in electronic devices. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. Applied 12, 024056 (2019)

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Authors: Xinlu Li, Evgeny Y. Tsymbal, **g-Tao Lü, Jia Zhang, Long You, Yurong Su

Abstract: Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-depende… ▽ More Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe3GeTe2, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bounding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, lattice mismatch, interface distance and other parameters which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Polar Coupling Enabled Nonlinear Optical Filtering at MoS$_2$/Ferroelectric Heterointerfaces

Authors: Dawei Li, Xi Huang, Zhiyong Xiao, Hanying Chen, Le Zhang, Yifei Hao, **gfeng Song, Ding-Fu Shao, Evgeny Y. Tsymbal, Yongfeng Lu, Xia Hong

Abstract: Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from… ▽ More Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS$_2$ and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications. △ Less

Submitted 17 March, 2020; v1 submitted 4 March, 2019; originally announced March 2019.

Comments: 22 pages, 4 figures

Journal ref: Nature Communications 11, 1422 (2020)

Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling

Authors: Saikat Das, Bo Wang, Tula R. Paudel, Sung Min Park, Evgeny Y. Tsymbal, Long-Qing Chen, Daesu Lee, Tae Won Noh

Abstract: Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing na… ▽ More Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing nanoscale flexoelectricity. By applying strain gradients with an atomic force microscope tip, we systematically polarize an ultrathin film of otherwise nonpolar SrTiO$_{3}$, and simultaneously measure tunnel current across it. The measured tunnel current exhibits critical behaviour as a function of strain gradients, which manifests large modification of tunnel barrier profiles via flexoelectricity. Further analysis of this critical behaviour reveals significantly enhanced flexocoupling strength in ultrathin SrTiO$_{3}$, compared to that in bulk, rendering flexoelectricity more potent at the nanoscale. Our study not only suggests possible applications exploiting dynamic mechanical control of quantum effect, but also paves the way to characterize nanoscale flexoelectricity. △ Less

Submitted 4 February, 2019; originally announced February 2019.

Comments: Main and Supplementary combined, 40 pages

Journal ref: Nature Communications 10, 537 (2019)

Spin filtering in CrI$_3$ tunnel junctions

Authors: Tula R. Paudel, Evgeny Y. Tsymbal

Abstract: The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and ferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependen… ▽ More The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and ferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodes and a CrI$_3$ tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically-ordered four-monolayer CrI$_3$ and tunneling magnetoresistance of about 3,000% associated with a change of magnetic ordering in CrI$_3$. This behavior is understood in terms of the spin and wave-vector dependent evanescent states in CrI$_3$ which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI$_3$ which adds new features to the mechanism of spin-filtering in CrI$_3$-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI3 tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals. △ Less

Submitted 17 January, 2019; originally announced January 2019.

Journal ref: ACS Appl. Mater. Interfaces, 11, 15781 , 2019

Anomalous Hall Conductivity of a Non-Collinear Magnetic Antiperovskite

Authors: Gautam Gurung, Ding-Fu Shao, Tula R. Paudel, Evgeny Y. Tsymbal

Abstract: The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM) metals. Driven by non-vanishing Berry curvature of AFM materials with certain magnetic space group symmetry, anomalous Hall conductivity (AHC) is very sensitive to th… ▽ More The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM) metals. Driven by non-vanishing Berry curvature of AFM materials with certain magnetic space group symmetry, anomalous Hall conductivity (AHC) is very sensitive to the specific type of magnetic ordering. Here, we investigate the appearance of AHC in antiperovskite GaNMn$_{3}$ as a representative of broader materials family ANMn$_{3}$ (A is a main group element), where different types of non-collinear magnetic ordering can emerge. Using symmetry analyses and first-principles density-functional theory calculations, we show that with almost identical band structure, the nearly degenerate non-collinear AFM $Γ_{5g}$ and $Γ_{4g}$ phases of GaNMn$_{3}$ have zero and finite AHC, respectively. In a non-collinear ferrimagnetic $M$-1 phase, GaNMn$_{3}$ exhibits a large AHC due to the presence of a sizable net magnetic moment. In the non-collinear antiperovskite magnets, transitions between different magnetic phases, exhibiting different AHC states, can be produced by do**, strain, or spin transfer torque, which makes these materials promising for novel spintronic applications. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 044409 (2019)

Dirac nodal line metal for topological antiferromagnetic spintronics

Authors: Ding-Fu Shao, Gautam Gurung, Shu-Hui Zhang, Evgeny Y. Tsymbal

Abstract: Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the Néel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered Néel spin-orbit torque has been proposed to electrically manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM material to realize these prop… ▽ More Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the Néel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered Néel spin-orbit torque has been proposed to electrically manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM material to realize these properties in practice is missing. Here, we predict that room temperature AFM metal MnPd$_{2}$ allows the electrical control of the Dirac nodal line by the Néel spin-orbit torque. Based on first-principles density functional theory calculations, we show that reorientation of the Néel vector leads to switching between the symmetry-protected degenerate state and the gapped state associated with the dispersive Dirac nodal line at the Fermi energy. The calculated spin Hall conductivity strongly depends on the Néel vector orientation and can be used to experimentally detect the predicted effect using a proposed spin-orbit torque device. Our results indicate that AFM Dirac nodal line metal MnPd$_{2}$ represents a promising material for topological AFM spintronics. △ Less

Submitted 31 January, 2019; v1 submitted 21 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Lett. 122, 077203 (2019)

Tunneling anomalous Hall effect in a ferroelectric tunnel junction

Authors: M. Ye. Zhuravlev, Artem Alexandrov, L. L. Tao, Evgeny Y. Tsymbal

Abstract: We report on a theoretical study on the tunneling anomalous Hall effect (TAHE) in a ferroelectric tunnel junction (FTJ), resulting from spin-orbit coupling (SOC) in the ferroelectric barrier. For ferroelectric barriers with large SOC, such as orthorhombic HfO2 and BiInO3, we predict values of the tunneling anomalous Hall conductivity (TAHC) measurable experimentally. We demonstrate strong anisotro… ▽ More We report on a theoretical study on the tunneling anomalous Hall effect (TAHE) in a ferroelectric tunnel junction (FTJ), resulting from spin-orbit coupling (SOC) in the ferroelectric barrier. For ferroelectric barriers with large SOC, such as orthorhombic HfO2 and BiInO3, we predict values of the tunneling anomalous Hall conductivity (TAHC) measurable experimentally. We demonstrate strong anisotropy in TAHC depending on the type of SOC. For the SOC with equal Rashba and Dresselhaus parameters, we predict the perfect anisotropy with zero TAHC for certain magnetization orientations. The TAHC changes sign with ferroelectric polarization reversal providing a new functionality of FTJs. Conversely, measuring the TAHC as a function of magnetization orientation offers an efficient way to quantify the type of SOC in the insulating barrier. Our results provide a new insight into the TAHE and open avenues for potential device applications. △ Less

Submitted 17 April, 2019; v1 submitted 10 August, 2018; originally announced August 2018.

Journal ref: Appl. Phys. Lett. 113, 172405 (2018)

Two-dimensional type-II Dirac fermions in a LaAlO3/LaNiO3/LaAlO3 quantum well

Authors: L. L. Tao, Evgeny Y. Tsymbal

Abstract: The type-II Dirac fermions that are characterized by a tilted Dirac cone and anisotropic magneto-transport properties have been recently proposed theoretically and confirmed experimentally. Here, we predict the emergence of two-dimensional type-II Dirac fermions in LaAlO3/LaNiO3/LaAlO3 quantum-well structures. Using first-principles calculations and model analysis, we show that the Dirac points ar… ▽ More The type-II Dirac fermions that are characterized by a tilted Dirac cone and anisotropic magneto-transport properties have been recently proposed theoretically and confirmed experimentally. Here, we predict the emergence of two-dimensional type-II Dirac fermions in LaAlO3/LaNiO3/LaAlO3 quantum-well structures. Using first-principles calculations and model analysis, we show that the Dirac points are formed at the crossing between the dx2-y2 and dz2 bands protected by the mirror symmetry. The energy position of the Dirac points can be tuned to appear at the Fermi energy by changing the quantum-well width. For the quantum-well structure with a two-unit cell thick LaNiO3 layer, we predict the coexistence of the type-II Dirac points and the Dirac nodal line. The results are analyzed and interpreted using a tight-binding model and symmetry arguments. Our findings offer a practical way to realize the 2D type-II Dirac fermions in oxide heterostructures. △ Less

Submitted 19 August, 2018; v1 submitted 26 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 121102 (2018)

Tunable two-dimensional Dirac nodal nets

Authors: Ding-Fu Shao, Shu-Hui Zhang, Xiaoqian Dang, Evgeny Y. Tsymbal

Abstract: Nodal line semimetals are characterized by symmetry-protected band crossing lines and are expected to exhibit nontrivial electronic properties. Connections of the multiple nodal lines, resulting in nodal nets, chains, or links, are envisioned to produce even more exotic quantum states. In this work, we propose a feasible approach to realize tunable nodal line connections in real materials. We show… ▽ More Nodal line semimetals are characterized by symmetry-protected band crossing lines and are expected to exhibit nontrivial electronic properties. Connections of the multiple nodal lines, resulting in nodal nets, chains, or links, are envisioned to produce even more exotic quantum states. In this work, we propose a feasible approach to realize tunable nodal line connections in real materials. We show that certain space group symmetries support the coexistence of the planar symmetry enforced and accidental nodal lines, which are robust to spin-orbit coupling and can be tailored into intricate patterns by chemical substitution, pressure, or strain. Based on first-principles calculations, we identify non-symmorphic centrosymmetric quasi-one-dimensional compounds, K$_{2}$SnBi and MX$_{3}$ (M = Ti, Zr, Hf and X = Cl, Br, I), as materials hosting such tunable 2D Dirac nodal nets. Unique Landau levels are predicted for the nodal line semimetals with the 2D Dirac nodal nets. Our results provide a viable approach for realize the novel physics of the nodal line connections in practice. △ Less

Submitted 24 September, 2018; v1 submitted 12 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. B 98, 161104 (2018)

Persistent spin texture enforced by symmetry

Authors: L. L. Tao, Evgeny Y. Tsymbal

Abstract: Persistent spin texture (PST) is the property of some materials to maintain a uniform spin configuration in the momentum space. This property has been predicted to support an extraordinarily long spin lifetime of carriers promising for spintronics applications. The PST is known to emerge when the strengths of two dominant spin-orbit couplings, the Rashba and linear Dresselhaus, are equal. This con… ▽ More Persistent spin texture (PST) is the property of some materials to maintain a uniform spin configuration in the momentum space. This property has been predicted to support an extraordinarily long spin lifetime of carriers promising for spintronics applications. The PST is known to emerge when the strengths of two dominant spin-orbit couplings, the Rashba and linear Dresselhaus, are equal. This condition, however, is not trivial to achieve and requires tuning the Rashba and Dresselhaus parameters, as has been demonstrated with semiconductor quantum-well structures. Here we predict that there exist a class of non-centrosymmetric bulk materials where the PST is enforced by the non-symmorphic space group symmetry of the crystal. Around certain high symmetry points in the Brillouin zone, the sublattice degrees of freedom impose a constraint on the effective spin-orbit field, which remains independent of the momentum orientation and thus maintains the PST. We illustrate this behavior using density-functional theory calculations for a handful of promising candidates accessible experimentally. Among them is the ferroelectric oxide BiInO3-a wide band gap semiconductor which sustains a PST around the conduction band minimum. Our results broaden the range of materials, which can be employed in spintronics. △ Less

Submitted 19 August, 2018; v1 submitted 7 March, 2018; originally announced March 2018.

Journal ref: Nat. Commun. 9, 2763 (2018)

Polarization-controlled modulation do** of a ferroelectric from first principles

Authors: Xiaohui Liu, Evgeny Y. Tsymbal, Karin M. Rabe

Abstract: In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic states in the ferroelectric contribute to the device conductance as the result of a modulation do** effect in which carriers are transferred from the channel into… ▽ More In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic states in the ferroelectric contribute to the device conductance as the result of a modulation do** effect in which carriers are transferred from the channel into the ferroelectric layers near the interface. Here we report first-principles calculations and model analysis to elucidate the various aspects of this mechanism and to provide guidance in materials choices and interface termination for optimizing the on-off ratio, using BaTiO3/n-SrTiO3 and PbTiO3/n-SrTiO3 as prototypical systems. It is shown that the modulation do** is substantial in both cases, and that extension of an electrostatic model developed in previous work provides a good description of the transferred charge distribution. This model can be used to suggest additional materials heterostructures for the design of active FeFETs. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 97, 094107 (2018)

Reversible spin texture in ferroelectric HfO2

Authors: L. L. Tao, Tula R. Paudel, Alexey A. Kovalev, Evgeny Y. Tsymbal

Abstract: Spin-orbit coupling effects occurring in non-centrosymmetric materials are known to be responsible for non-trivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible for a non-volatile electrical control of the spin degrees of freedom. Here, we explore a tec… ▽ More Spin-orbit coupling effects occurring in non-centrosymmetric materials are known to be responsible for non-trivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible for a non-volatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, HfO2, which has been shown to exhibit robust ferroelectricity in a non-centrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric HfO2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k.p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant αD = 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 95, 245141 (2017)

Electronic structure and direct observation of ferrimagnetism in multiferroic hexagonal YbFeO3

Authors: Shi Cao, Kishan Sinha, Xin Zhang, Xiaozhe Zhang, Xiao Wang, Yuewei Yin, Alpha T N'Diaye, Jian Wang, David J Keavney, Tula R Paudel, Yaohua Liu, Xuemei Cheng, Evgeny Y Tsymbal, Peter A Dowben, Xiaoshan Xu

Abstract: The magnetic interaction between rare-earth and Fe ions in hexagonal rare-earth ferrites (h-REFeO3), may amplify the weak ferromagnetic moment on Fe, making these materials more appealing as multiferroics. To elucidate the interaction strength between the rare-earth and Fe ions as well as the magnetic moment of the rare-earth ions, element specific magnetic characterization is needed. Using X-ray… ▽ More The magnetic interaction between rare-earth and Fe ions in hexagonal rare-earth ferrites (h-REFeO3), may amplify the weak ferromagnetic moment on Fe, making these materials more appealing as multiferroics. To elucidate the interaction strength between the rare-earth and Fe ions as well as the magnetic moment of the rare-earth ions, element specific magnetic characterization is needed. Using X-ray magnetic circular dichroism, we have studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show anti-alignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. The magnetic moment of Yb is about 1.6 \muB at low-temperature, significantly reduced compared with the 4.5 \muB moment of a free Yb3+. In addition, the saturation magnetization of Fe in h-YbFeO3 has a sizable enhancement compared with that in h-LuFeO3. These findings directly demonstrate that ferrimagnetic order exists in h-YbFeO3; they also account for the enhancement of magnetization and the reduction of coercivity in h-YbFeO3 compared with those in h-LuFeO3 at low temperature, suggesting an important role for the rare-earth ions in tuning the multiferroic properties of h-REFeO3. △ Less

Submitted 3 June, 2017; v1 submitted 24 March, 2017; originally announced March 2017.

Journal ref: Phys. Rev. B 95, 224428 (2017)

Elucidating the Voltage Controlled Magnetic Anisotropy

Authors: Jia Zhang, Pavel V. Lukashev, Sitaram S. Jaswal, Evgeny Y. Tsymbal

Abstract: Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a change in the d-orbital occupation on the transition metal interface atoms with an applied electric field. However, a simple qualitative picture of how this occupati… ▽ More Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a change in the d-orbital occupation on the transition metal interface atoms with an applied electric field. However, a simple qualitative picture of how this occupation controls the magnetocrystalline anisotropy (MCA) and even why in certain cases the MCA has opposite sign still remains elusive. In this paper, we exploit a simple model of orbital populations to elucidate a number of features typical for the interface MCA and the effect of electric field on it, for 3d transition metal thin films used in magnetic tunnel junctions. We find that in all considered cases including the Fe (001) surface, clean Fe1-xCox(001)/MgO interface and oxidized Fe(001)/MgO interface, the effects of alloying and electric field enhance the MCA energy with electron depletion which is largely explained by the occupancy of the minority-spin dxz,yz orbitals. On the other hand, the hole doped Fe(001) exhibits an inverse VCMA, where the MCA enhancement is achieved when electrons are accumulated at the Fe (001)/MgO interface with applied electric field. In this regime we predict a significantly enhanced VCMA which exceeds 1pJ/Vm. Realizing this regime experimentally may be favorable for a practical purpose of voltage driven magnetization reversal. △ Less

Submitted 8 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 96, 014435 (2017)