Showing 1–50 of 77 results for author: Tsukazaki, A

Kondo effect in electrostatically defined ZnO quantum dots

Authors: Kosuke Noro, Yusuke Kozuka, Kazuma Matsumura, Takeshi Kumasaka, Yoshihiro Fujiwara, Atsushi Tsukazaki, Masashi Kawasaki, Tomohiro Otsuka

Abstract: Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of… ▽ More Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. △ Less

Submitted 21 November, 2023; originally announced November 2023.

Comments: 16 pages, 4 figures

Strongly pinned skyrmionic bubbles and higher-order nonlinear Hall resistances at the interface of Pt/FeSi bilayer

Authors: T. Hori, N. Kanazawa, K. Matsuura, H. Ishizuka, K. Fujiwara, A. Tsukazaki, M. Ichikawa, M. Kawasaki, F. Kagawa, M. Hirayama, Y. Tokura

Abstract: Engineering of magnetic heterostructures for spintronic applications has entered a new phase, driven by the recent discoveries of topological materials and exfoliated van der Waals materials. Their low-dimensional properties can be dramatically modulated in designer heterostructures via proximity effects from adjacent materials, thus enabling the realization of diverse quantum states and functiona… ▽ More Engineering of magnetic heterostructures for spintronic applications has entered a new phase, driven by the recent discoveries of topological materials and exfoliated van der Waals materials. Their low-dimensional properties can be dramatically modulated in designer heterostructures via proximity effects from adjacent materials, thus enabling the realization of diverse quantum states and functionalities. Here we investigate spin-orbit coupling (SOC) proximity effects of Pt on the recently discovered quasi-two-dimensional ferromagnetic state at FeSi surface. Skyrmionic bubbles (SkBs) are formed as a result of the enhanced interfacial Dzyloshinskii-Moriya interaction. The strong pinning effects on the SkBs are evidenced from the significant dispersion in size and shape of the SkBs and are further identified as a greatly enhanced threshold current density required for depinning of the SkBs. The robust integrity of the SkB assembly leads to the emergence of higher-order nonlinear Hall effects in the high current density regime, which originate from nontrivial Hall effects due to the noncollinearity of the spin texture, as well as from the current-induced magnetization dynamics via the augmented spin-orbit torque. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Comments: 4 figures

Molecular beam epitaxy of superconducting FeSe$_{x}$Te$_{1-x}$ thin films interfaced with magnetic topological insulators

Authors: Yuki Sato, Soma Nagahama, Ilya Belopolski, Ryutaro Yoshimi, Minoru Kawamura, Atsushi Tsukazaki, Naoya Kanazawa, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor FeSe$_{x}$Te$_{1-x}$ (FST) thin films across the entire composition range of $0 \leq x \leq 1$ and its heterostructure with a magnetic topological insulator by usi… ▽ More Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor FeSe$_{x}$Te$_{1-x}$ (FST) thin films across the entire composition range of $0 \leq x \leq 1$ and its heterostructure with a magnetic topological insulator by using molecular beam epitaxy. Superconductivity is observed in the FST films with an optimal superconducting transition temperature $T_c$ $\sim$ 12 K at around x = 0.1. We found that superconductivity survives in the very Te-rich films ($x \leq 0.05$), showing stark contrast to bulk crystals with suppression of superconductivity due to an appearance of bicollinear antiferromagnetism accompanied by a monoclinic structural transition. By examining thickness $t$ dependence of magnetic susceptibility and electrical transport properties, we observed a trend where anomalies associated with the first order structural transition broaden in films with below $t \sim$ 100 nm. We infer this observation suggests a suppression of the structural instability near substrates. Furthermore, we fabricated an all chalcogenide-based heterointerface between FST and a magnetic topological insulator (Cr,Bi,Sb)$_{2}$Te$_{3}$ for the first time, observing both superconductivity and a large anomalous Hall conductivity. The anomalous Hall conductivity increases with decreasing temperature, approaching the quantized value of $e^2/h$ down to the measurable minimum temperature at $T_c$. The result suggests coexistence of magnetic and superconducting gaps at low temperatures opening at the top and bottom surfaces, respectively. Our novel magnetic topological insulator/superconductor heterostructure could be an ideal platform to explore chiral Majorana edge mode. △ Less

Submitted 23 April, 2024; v1 submitted 27 October, 2023; originally announced October 2023.

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Authors: Ryota Watanabe, Ryutaro Yoshimi, Kei S. Takahashi, Atsushi Tsukazaki, Masashi Kawasaki, Minoru Kawamura, Yoshinori Tokura

Abstract: Surface states of a topological insulator demonstrate interesting quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the quantum magnetoelectric effect. Fermi energy tuning plays a role in inducing phase transitions and develo** future device functions. Here, we report on controlling the topological phases in a dual-gate field-effect transistor of a semi-magnetic topological… ▽ More Surface states of a topological insulator demonstrate interesting quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the quantum magnetoelectric effect. Fermi energy tuning plays a role in inducing phase transitions and develo** future device functions. Here, we report on controlling the topological phases in a dual-gate field-effect transistor of a semi-magnetic topological insulator heterostructure. The heterostructure consists of magnetized one-surface and non-magnetic other-surface. By tuning the Fermi energy to the energy gap of the magnetized surface, the Hall conductivity $σ_{xy}$ becomes close to the half-integer quantized Hall conductivity $e^2/2h$, exemplifying parity anomaly. The dual-gate control enables the band structure alignment to the two quantum Hall states with $σ_{xy} = e^2/h$ and 0 under a strong magnetic field. These states are topologically equivalent to the QAH and axion insulator states, respectively. Precise and independent control of the band alignment of the top and bottom surfaces successively induces various topological phase transitions among the QAH, axion insulator, and parity anomaly states in magnetic topological insulators. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: 20 pages, 4 figures

Light-induced chiral gauge field in a massive 3D Dirac electron system

Authors: Naotaka Yoshikawa, Yoshua Hirai, Kazuma Ogawa, Shun Okumura, Kohei Fujiwara, Junya Ikeda, Takashi Koretsune, Ryotaro Arita, Aditi Mitra, Atsushi Tsukazaki, Takashi Oka, Ryo Shimano

Abstract: The concept of the chiral gauge field (CGF), originally developed in theoretical particle physics, has now emerged in condensed matter systems in materials known as Weyl semimetals. In general, Weyl semimetals emerge from Dirac semimetals when time-reversal or spatial-inversion symmetries are broken. Recently, it has gained a growing interest to manipulate such topological states of matter by impl… ▽ More The concept of the chiral gauge field (CGF), originally developed in theoretical particle physics, has now emerged in condensed matter systems in materials known as Weyl semimetals. In general, Weyl semimetals emerge from Dirac semimetals when time-reversal or spatial-inversion symmetries are broken. Recently, it has gained a growing interest to manipulate such topological states of matter by implementing the CGF by shining light to materials. Here we have demonstrated the emergence of CGF in a massive 3D Dirac electron system in the paramagnetic phase of Co3Sn2S2, which exhibits a ferromagnetic Weyl semimetal phase at low temperatures. We first show theoretically that the illumination of circularly polarized light implements the CGF in the paramagnetic state of Co3Sn2S2 and gives rise to a topological Weyl state, which can be realized only in the nonequilibrium state. Then we demonstrated that the presence of light-induced CGF through the observation of light-induced anomalous Hall effect, the behavior of which quantitatively agrees with the calculation from the Floquet theory. The light-induced AHE manifests the Berry curvature which becomes nonzero as the bands split due to the light-induced CGF. Our demonstration paves a new pathway for ultrafast manipulation of topological phases in 3D Dirac semimetals and for further exploring new quantum matter phases which can be only achieved by light. △ Less

Submitted 24 September, 2022; originally announced September 2022.

Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase

Authors: Takeshi Seki, Yong-Chang Lau, Junya Ikeda, Kohei Fujiwara, Akihiro Ozawa, Satoshi Iihama, Kentaro Nomura, Atsushi Tsukazaki

Abstract: Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature ($\textit{T}$) dependence of conversion between charge current and spin current for the CSS thin film by measuring the spin-torque ferromagnetic resonance (ST-FMR)… ▽ More Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature ($\textit{T}$) dependence of conversion between charge current and spin current for the CSS thin film by measuring the spin-torque ferromagnetic resonance (ST-FMR) for the trilayer consisting of CSS / Cu / CoFeB. Above $\textit{T}_\textrm{C}$ ~ 170 K, the CSS / Cu / CoFeB trilayer exhibits the clear ST-FMR signal coming from the spin Hall effect in the paramagnetic CSS and the anisotropic magnetoresistance (AMR) of CoFeB. Below $\textit{T}_\textrm{C}$, on the other hand, it is found that the ST-FMR signal involves the dc voltages ($\textit{V}_\textrm{dc}$) not only through the AMR but also through the giant magnetoresistance (GMR). Thus, the resistance changes coming from both AMR and GMR should be taken into account to correctly understand the characteristic field angular dependence of $\textit{V}_\textrm{dc}$. The spin Hall torque generated from the ferromagnetic CSS, which possesses the same symmetry as that for spin Hall effect, dominantly acts on the magnetization of CoFeB. A definite increase in the spin-charge conversion efficiency ($ξ$) is observed at $\textit{T}$ < $\textit{T}_\textrm{C}$, indicating that the phase transition to the ferromagnetic CSS promotes the highly efficient spin-charge conversion. In addition, our theoretical calculation shows the increase in spin Hall conductivity with the emergence of magnetic moment at $\textit{T}$ < $\textit{T}_\textrm{C}$, which is consistent with the experimental observation. △ Less

Submitted 10 August, 2022; originally announced August 2022.

Comments: 38 pages, 8 figures, 2 tables

Journal ref: Phys. Rev. Research 5, 013222-1-14 (2023)

Nonreciprocal electrical transport in multiferroic semiconductor (Ge,Mn)Te

Authors: Ryutaro Yoshimi, Minoru Kawamura, Kenji Yasuda, Atsushi Tsukazaki, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal… ▽ More We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal resistance compared to GeTe, the nonmagnetic counterpart with the same crystal structure. The magnetic-field-angle dependence of the nonreciprocal resistance is maximized when magnetic field is orthogonal to both current and electric polarization, in accord with the symmetry argument. From the analysis of temperature and magnetic field dependence, we deduce that inelastic scatterings of electrons mediated by magnons dominantly contribute to the observed nonreciprocal response. Furthermore, the nonreciprocal resistance is significantly enhanced by lowering hole density. The Fermi level dependence is attributed to the deformation of the Rashba band in which the spin-momentum locked single Fermi surface appears by exchange field from the in-plane magnetization. The present study provides a key insight to the mechanisms of novel transport phenomena caused by the interplay of ferroelectric and ferromagnetic orders in a semiconductor. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Terahertz lattice and charge dynamics in ferroelectric semiconductor Sn$_x$Pb$_{1-x}$Te

Authors: Y. Okamura, H. Handa, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, Y. Tokura, Y. Takahashi

Abstract: The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation and electronic states is therefore essentially important for the control of novel topological phases. Here, we study the terahertz lattice and charge dynamics i… ▽ More The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation and electronic states is therefore essentially important for the control of novel topological phases. Here, we study the terahertz lattice and charge dynamics in ferroelectric semiconductor SnxPb1-xTe thin films hosting versatile topological phases by means of the terahertz time-domain spectroscopy. With lowering the temperature, the resonant frequency of transverse optical phonon shows the significant softening and upturn. This temperature anomaly of lattice dynamics directly indicates the displacive-type ferroelectric transition. The resulting phase diagram suggests the enhancement of ferroelectricity in the films due to compressive strain compared with the bulk crystals. The soft phonon induces the large DC and terahertz dielectric constant even in metallic state. Furthermore, we find that the Born effective charge of soft phonon mode is enhanced at around the compositions showing the band gap closing associated with the topological transition. △ Less

Submitted 13 April, 2022; originally announced April 2022.

Intercorrelated anomalous Hall and spin Hall effect in kagome-lattice Co$_3$Sn$_2$S$_2$-based shandite films

Authors: Yong-Chang Lau, Junya Ikeda, Kohei Fujiwara, Akihiro Ozawa, Takeshi Seki, Kentaro Nomura, Atsushi Tsukazaki, Koki Takanashi

Abstract: Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly-degenerated gapped Dirac… ▽ More Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly-degenerated gapped Dirac states. Here, we reveal the attractive potential of these Dirac nodes in paramagnetic state for efficient spin current generation at room temperature via the spin Hall effect. Ni and In are introduced to separately substitute Co and Sn in a prototypal mWSM Co$_3$Sn$_2$S$_2$ shandite film and tune the Fermi level. Composition dependence of spin Hall conductivity for paramagnetic shandite at room temperature resembles that of anomalous Hall conductivity for ferromagnetic shandite at low temperature; exhibiting peak-like dependence centering around the Ni-substituted Co$_2$Ni$_1$Sn$_2$S$_2$ and undoped Co$_3$Sn$_2$S$_2$ composition, respectively. The peak shift is consistent with the redistribution of electrons' filling upon crossing the ferromagnetic-paramagnetic transition, suggesting intercorrelation between the two Hall effects. Our findings highlight a novel strategy for the quest of spin Hall materials, guided by the abundant experimental anomalous Hall effect data of ferromagnets in the literature. △ Less

Submitted 4 March, 2022; originally announced March 2022.

Comments: 7 pages, 4 figures, supplementary available upon request

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Authors: ** Hong Lee, Takayuki Harada, Felix Trier, Lourdes Marcano, Florian Godel, Sergio Valencia, Atsushi Tsukazaki, Manuel Bibes

Abstract: Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivitie… ▽ More Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials. △ Less

Submitted 29 September, 2021; originally announced September 2021.

Comments: Accepted in Nano Lett

Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films

Authors: Junya Ikeda, Kohei Fujiwara, Junichi Shiogai, Takeshi Seki, Kentaro Nomura, Koki Takanashi, Atsushi Tsukazaki

Abstract: Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D cond… ▽ More Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D conduction path clearly emerges in Co3Sn2S2 thin films, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which is rather thicker than 5 nm in topological insulator Bi2Se3. This large value may come from the narrow gap at Weyl point and relatively weak spin-orbit interaction of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Journal ref: Communications Physics 4, 117 (2021)

Experimental signature of parity anomaly in semi-magnetic topological insulator

Authors: M. Mogi, Y. Okamura, M. Kawamura, R. Yoshimi, K. Yasuda, A. Tsukazaki, K. S. Takahashi, T. Morimoto, N. Nagaosa, M. Kawasaki, Y. Takahashi, Y. Tokura

Abstract: A three-dimensional topological insulator features a two-dimensional surface state consisting of a single linearly-dispersive Dirac cone. Under broken time-reversal symmetry, the single Dirac cone is predicted to cause half-integer quantization of Hall conductance, which is a manifestation of the parity anomaly in quantum field theory. However, despite various observations of quantization phenomen… ▽ More A three-dimensional topological insulator features a two-dimensional surface state consisting of a single linearly-dispersive Dirac cone. Under broken time-reversal symmetry, the single Dirac cone is predicted to cause half-integer quantization of Hall conductance, which is a manifestation of the parity anomaly in quantum field theory. However, despite various observations of quantization phenomena, the half-integer quantization has been elusive because a pair of equivalent Dirac cones on two opposing surfaces are simultaneously measured in ordinary experiments. Here we demonstrate the half-integer quantization of Hall conductance in a synthetic heterostructure termed a 'semi-magnetic' topological insulator, where only one surface state is gapped by magnetic do** and the opposite one is non-magnetic and gapless. We observe half quantized Faraday/Kerr rotations with terahertz magneto-optical spectroscopy and half quantized Hall conductance in transport at zero magnetic field. Our results suggest a condensed-matter realization of the parity anomaly and open a way for studying unconventional physics enabled by a single Dirac fermion. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 25 pages, 7 figures

Journal ref: Nature Physics (2022)

Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi

Authors: Yusuke Ohtsuka, Naoya Kanazawa, Motoaki Hirayama, Akira Matsui, Takuya Nomoto, Ryotaro Arita, Taro Nakajima, Takayasu Hanashima, Victor Ukleev, Hiroyuki Aoki, Masataka Mogi, Kohei Fujiwara, Atsushi Tsukazaki, Masakazu Ichikawa, Masashi Kawasaki, Yoshinori Tokura

Abstract: A chiral compound FeSi is a nonmagnetic narrow-gap insulator, exhibiting peculiar charge and spin dynamics beyond a simple band-structure picture. Those unusual features have been attracting renewed attention from topological aspects. Although a signature of surface conduction was indicated according to size-dependent resistivity in bulk crystals, its existence and topological properties remain el… ▽ More A chiral compound FeSi is a nonmagnetic narrow-gap insulator, exhibiting peculiar charge and spin dynamics beyond a simple band-structure picture. Those unusual features have been attracting renewed attention from topological aspects. Although a signature of surface conduction was indicated according to size-dependent resistivity in bulk crystals, its existence and topological properties remain elusive. Here we demonstrate an inherent surface ferromagnetic-metal state of FeSi thin films and its strong spin-orbit-coupling (SOC) properties through multiple characterizations of the two-dimensional (2D) conductance, magnetization and spintronic functionality. Terminated covalent-bonding orbitals constitute the polar surface state with momentum-dependent spin textures due to Rashba-type spin splitting, as corroborated by unidirectional magnetoresistance measurements and first-principles calculations. As a consequence of the spin-momentum locking, non-equilibrium spin accumulation causes magnetization switching. These surface properties are closely related to the Zak phase of the bulk band topology. Our findings propose another route to explore noble-metal-free materials for SOC-based spin manipulation. △ Less

Submitted 26 April, 2021; originally announced April 2021.

Comments: 22 pages, 6 figures, supplementary materials

Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor

Authors: Ryutaro Yoshimi, Makoto Masuko, Naoki Ogawa, Minoru Kawamura, Atsushi Tsukazaki, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electri… ▽ More Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x < 0.5), increase in In composition reduces the hole density and changes the carrier type from p-type to n-type. In a narrow region centered at (x, y) = (0.16, 0.07) where the n-type carriers are slightly doped, charge transport with high mobility exceeding 5,000 cm$^{2}$V$^{-1}$s$^{-1}$ shows up, representing the possible semimetal states. In those samples, the optical second harmonic generation measurement shows the breaking of inversion symmetry along the out-of-plane [111] direction, which ensures the presence of polar semimetal state. The thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te materials systems with a variety of electronic states would become a promising materials platform for the exploration of novel quantum phenomena. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Materials 5, 094202 (2021)

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

Authors: Joseph Falson, Inti Sodemann, Brian Skinner, Daniela Tabrea, Yusuke Kozuka, Atsushi Tsukazaki, Masashi Kawasaki, Klaus von Klitzing, Jurgen H Smet

Abstract: The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comp… ▽ More The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation. △ Less

Submitted 30 March, 2021; originally announced March 2021.

First-principles investigation of magnetic and transport properties in hole-doped shandite compounds Co$_3$In$_x$Sn$_{2-x}$S$_2$

Authors: Yuki Yanagi, Junya Ikeda, Kohei Fujiwara, Kentaro Nomura, Atsushi Tsukazaki, Michi-To Suzuki

Abstract: Co-based shandite Co$_3$Sn$_2$S$_2$ is a representative example of magnetic Weyl semimetals showing rich transport phenomena. We thoroughly investigate magnetic and transport properties of hole-doped shandites Co$_3$In$_x$Sn$_{2-x}$S$_2$ by first-principles calculations. The calculations reproduce nonlinear reduction of anomalous Hall conductivity with do** In for Co$_3$Sn$_2$S$_2$, as reported… ▽ More Co-based shandite Co$_3$Sn$_2$S$_2$ is a representative example of magnetic Weyl semimetals showing rich transport phenomena. We thoroughly investigate magnetic and transport properties of hole-doped shandites Co$_3$In$_x$Sn$_{2-x}$S$_2$ by first-principles calculations. The calculations reproduce nonlinear reduction of anomalous Hall conductivity with do** In for Co$_3$Sn$_2$S$_2$, as reported in experiments, against the linearly decreased ferromagnetic moment within virtual crystal approximation. We show that a drastic change in the band parity character of Fermi surfaces, attributed to the nodal rings lifted energetically with In-do**, leads to strong enhancement of anomalous Nernst conductivity with reversing its sign in Co$_3$In$_x$Sn$_{2-x}$S$_2$. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 103, 205112 (2021)

Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet

Authors: Yukako Fujishiro, Naoya Kanazawa, Ryosuke Kurihara, Hiroaki Ishizuka, Tomohiro Hori, Fehmi Sami Yasin, Xiuzhen Yu, Atsushi Tsukazaki, Masakazu Ichikawa, Masashi Kawasaki, Naoto Nagaosa, Masashi Tokunaga, Yoshinori Tokura

Abstract: The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AH… ▽ More The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle respectively reach 40,000 Ω-1cm-1 and 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally-excited spin-clusters with scalar spin chirality, which is corroborated by the temperature-magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures. △ Less

Submitted 23 November, 2020; originally announced November 2020.

Comments: 21 pages, 4 figures

Molecular beam epitaxy of superconducting Sn$_{1-x}$In$_x$Te thin films

Authors: M. Masuko, R. Yoshimi, A. Tsukazaki, M. Kawamura, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solub… ▽ More We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_\mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_\mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices. △ Less

Submitted 30 September, 2020; originally announced September 2020.

Comments: 20 pages, 6 figures

Journal ref: Physical Review Materials 4, 091202(R) (2020)

Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$

Authors: Kei Miura, Kohei Fujiwara, Kei Nakayama, Ryo Ishikawa, Naoya Shibata, Atsushi Tsukazaki

Abstract: In the quest for quantum spin liquids, thin films are expected to open the way for the control of intricate magnetic interactions in actual materials by exploiting epitaxial strain and two-dimensionality. However, materials compatible with conventional thin-film growth methods have largely remained undeveloped. As a promising candidate towards the materialization of quantum spin liquids in thin fi… ▽ More In the quest for quantum spin liquids, thin films are expected to open the way for the control of intricate magnetic interactions in actual materials by exploiting epitaxial strain and two-dimensionality. However, materials compatible with conventional thin-film growth methods have largely remained undeveloped. As a promising candidate towards the materialization of quantum spin liquids in thin films, we here present a robust ilmenite-type oxide with a honeycomb lattice of edge-sharing IrO$_6$ octahedra artificially stabilized by superlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO$_3$. The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO$_3$, having the atomic arrangement corresponding to ilmenite-type MnTiO$_3$ not discovered yet. By spin Hall magnetoresistance measurements, we found that antiferromagnetic ordering in the ilmenite Mn sublattice is suppressed by modified magnetic interactions in the MnO$_6$ planes via the IrO$_6$ planes. These findings lay the foundation for the creation of two-dimensional Kitaev candidate materials, accelerating the discovery of exotic physics and applications specific to quantum spin liquids. △ Less

Submitted 17 August, 2020; v1 submitted 12 August, 2020; originally announced August 2020.

Journal ref: Communications Materials 1, 55 (2020)

Determination of the phase coherence length of PdCoO$_2$ nanostructures

Authors: T. Harada, P. Bredol, H. Inoue, S. Ito, J. Mannhart, A. Tsukazaki

Abstract: The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we deter… ▽ More The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we determined the phase coherence length of electron transport in c-axis oriented PdCoO$_2$ thin films to equal ~100 nm. The weak temperature dependence of the measured phase coherence length suggests that defect scattering at twin boundaries in the PdCoO$_2$ thin film governs phase breaking. These results suggest that phase coherent devices can be achieved by realizing the devices smaller than the size of twin domains, via refined microfabrication and suppression of twin boundaries. △ Less

Submitted 17 January, 2021; v1 submitted 6 July, 2020; originally announced July 2020.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 103, 045123 (2021)

Current scaling of the topological quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator

Authors: Minoru Kawamura, Masataka Mogi, Ryutaro Yoshimi, Atsushi Tsukazaki, Yusuke Kozuka, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each ot… ▽ More We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each other at a single point, exemplifying a quantum critical behavior of the transition. The slopes of the transition curves follow a power law dependence of the excitation current, giving a scaling exponent. Combining with the result of the previous temperature scaling study, critical exponents $ν$ for the localization length and $p$ for the coherence length are separately evaluated as $ν$ = 2.8 $\pm$ 0.3 and $p$ = 3.3 $\pm$ 0.3. △ Less

Submitted 2 July, 2020; originally announced July 2020.

Comments: 6 pages, 4 figures

Microwave response of interacting oxide two-dimensional electron systems

Authors: D. Tabrea, I. A. Dmitriev, S. I. Dorozhkin, B. P. Gorshunov, A. V. Boris, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. Falson

Abstract: We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density s… ▽ More We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 115432 (2020)

Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$

Authors: Junichi Shiogai, Takumaru Chida, Kenichiro Hashimoto, Kohei Fujiwara, Takahiko Sasaki, Atsushi Tsukazaki

Abstract: Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-… ▽ More Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at $x$ = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering. △ Less

Submitted 16 March, 2020; originally announced March 2020.

Comments: 19 pages, 4 figures

Magnetic-field-induced topological phase transition in Fe-doped (Bi,Sb)$_2$Se$_3$ heterostructures

Authors: Y. Satake, J. Shiogai, G. P. Mazur, S. Kimura, S. Awaji, K. Fujiwara, T. Nojima, K. Nomura, S. Souma, T. Sato, T. Dietl, A. Tsukazaki

Abstract: Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence… ▽ More Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, do**, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting. △ Less

Submitted 21 February, 2020; originally announced February 2020.

Comments: 31 pages, 4 figures and supplementary 30 pages, 11 figures

Journal ref: Phys. Rev. Materials 4, 044202 (2020)

Anomalous Hall effect at the spontaneously electron-doped polar surface of PdCoO2 ultrathin films

Authors: T. Harada, K. Sugawara, K. Fujiwara, S. Ito, T. Nojima, T. Takahashi, T. Sato, A. Tsukazaki

Abstract: We revealed the electrical transport through surface ferromagnetic states of a nonmagnetic metal PdCoO2. Electronic reconstruction at the Pd-terminated surface of PdCoO2 induces Stoner-like ferromagnetic states, which could lead to spin-related phenomena among the highly conducting electrons in PdCoO2. Fabricating a series of nanometer-thick PdCoO2 thin films, we detected a surface-magnetization-d… ▽ More We revealed the electrical transport through surface ferromagnetic states of a nonmagnetic metal PdCoO2. Electronic reconstruction at the Pd-terminated surface of PdCoO2 induces Stoner-like ferromagnetic states, which could lead to spin-related phenomena among the highly conducting electrons in PdCoO2. Fabricating a series of nanometer-thick PdCoO2 thin films, we detected a surface-magnetization-driven anomalous Hall effect via systematic thickness- and termination-dependent measurements. Besides, we discuss that finite magnetic moments in electron doped CoO2 triangular lattices may have given rise to additional unconventional Hall resistance. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Research 2, 013282 (2020)

Ordering phenomena of spin trimers accompanied by large geometrical Hall effect

Authors: Shang Gao, Max Hirschberger, Oksana Zaharko, Taro Nakajima, Takashi Kurumaji, Akiko Kikkawa, Junichi Shiogai, Atsushi Tsukazaki, Shojiro Kimura, Satoshi Awaji, Yasujiro Taguchi, Taka-hisa Arima, Yoshinori Tokura

Abstract: The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The… ▽ More The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The entire spin chirality of the crystal, unless macroscopically canceled, causes the geometrical Hall effect of real-space Berry-phase origin, whereas the intrinsic anomalous Hall effect (AHE) in a conventional metallic ferromagnet is of the momentum-space Berry-phase origin induced by relativistic spin-orbit coupling (SOC). Here, we report the ordering phenomena of the spin-trimer scalar spin chirality and the consequent large geometrical Hall effect in the breathing kagomé lattice compound Dy$_3$Ru$_4$Al$_{12}$, where the Dy$^{3+}$ moments form non-coplanar spin trimers with local spin chirality. Using neutron diffraction, we show that the local spin chirality of the spin trimers as well as its ferroic/antiferroic orders can be switched by an external magnetic field, accompanying large changes in the geometrical Hall effect. Our finding reveals that systems composed of tunable spin trimers can be a fertile field to explore large emergent electromagnetic responses arising from real-space topological magnetic orders. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Comments: 15 pages, 12 figures

Journal ref: Phys. Rev. B 100, 241115 (2019)

Quantum anomalous Hall effect driven by magnetic proximity coupling in all-telluride based heterostructure

Authors: Ryota Watanabe, Ryutaro Yoshimi, Minoru Kawamura, Masataka Mogi, Atsushi Tsukazaki, Xiuzhen Yu, Kiyomi Nakajima, Kei S Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting magnetic proximity effect on the TI surface from adjacent ferromagnet layers may provide an alternative approach to the QAHE by opening an exchange gap with less… ▽ More The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting magnetic proximity effect on the TI surface from adjacent ferromagnet layers may provide an alternative approach to the QAHE by opening an exchange gap with less disorder than that in the doped system. Nevertheless, the engineering of a favorable heterointerface that realizes the QAHE based on the magnetic proximity effect remains to be achieved. Here, we report on the observation of the QAHE in a proximity coupled system of non-magnetic TI and ferromagnetic insulator (FMI). We have designed sandwich heterostructures of (Zn,Cr)Te/(Bi,Sb)2Te3/(Zn,Cr)Te that fulfills two prerequisites for the emergence of the QAHE; the formation of a sizable exchange gap at the TI surface state and the tuning of the Fermi energy into the exchange gap. The efficient proximity coupling in the all-telluride based heterostructure as demonstrated here will enable a realistic design of versatile tailor-made topological materials coupled with ferromagnetism, ferroelectricity, superconductivity, and so on. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Comments: 18 pages, 4 figures

Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators

Authors: Masataka Mogi, Taro Nakajima, Victor Ukleev, Atsushi Tsukazaki, Ryutaro Yoshimi, Minoru Kawamura, Kei S Takahashi, Takayasu Hanashima, Kazuhisa Kakurai, Taka-hisa Arima, Masashi Kawasaki, Yoshinori Tokura

Abstract: We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling b… ▽ More We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Comments: 33 pages, 12 figures including supplemental material, accepted by PRL

Journal ref: Phys. Rev. Lett. 123, 016804 (2019)

Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure

Authors: H. Hou, Y. Kozuka, Jun-Wei Liao, L. W. Smith, D. Kos, J. P. Griffiths, J. Falson, A. Tsukazaki, M. Kawasaki, C. J. B. Ford

Abstract: Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-facto… ▽ More Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon. △ Less

Submitted 8 March, 2019; originally announced March 2019.

Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability

Authors: Y. Satake, K. Fujiwara, J. Shiogai, T. Seki, A. Tsukazaki

Abstract: The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in Fe3Sn2 crystal produces a unique band structure leading to an order of magnitude larger anomalous Hall effect than in conventional ferromagnetic metals. In this work, we demonstrate that Fe-Sn nanocrystalline films also exhibit a large anomalous Hall effect, being applicable to magnetic sensors that satisfy both high sen… ▽ More The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in Fe3Sn2 crystal produces a unique band structure leading to an order of magnitude larger anomalous Hall effect than in conventional ferromagnetic metals. In this work, we demonstrate that Fe-Sn nanocrystalline films also exhibit a large anomalous Hall effect, being applicable to magnetic sensors that satisfy both high sensitivity and thermal stability. In the films prepared by a co-sputtering technique at room temperature, the partial development of crystalline lattice order appears as nanocrystals of Fe-Sn kagome layer. The tangent Hall angle, the ratio of Hall resistivity to longitudinal resistivity, is largely enhanced in the optimal alloy composition of close to Fe3Sn2, exemplifying the kagome origin even though the films are composed of nanocrystal and amorphous-like domains. These ferromagnetic Fe-Sn films possess great advantages as a Hall sensor over semiconductors in thermal stability owing to the weak temperature dependence of the anomalous Hall responses. Moreover, the room-temperature fabrication enables us to develop a mechanically flexible Hall sensor on an organic substrate. These demonstrations manifest the potential of kagome metal as an untapped reservoir for designing new functional devices. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Journal ref: Scientific Reports 9, 3282 (2019)

Andreev reflection at the interface with an oxide in the quantum Hall regime

Authors: Yusuke Kozuka, Atsushi Sakaguchi, Joseph Falson, Atsushi Tsukazaki, Masashi Kawasaki

Abstract: Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contact… ▽ More Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contacts, preventing efficient proximity between the quantum Hall edge states and Cooper pairs. Only recently have relatively transparent 2DES/superconductor junctions been investigated in graphene. In this study, we propose another material system for investigating 2DES/superconductor junctions, that is ZnO-based heterostrcuture. Due to the ionic nature of ZnO, a Schottky barrier is not effectively formed at the contact with a superconductor MoGe, as evidenced by the appearance of Andreev reflection at low temperatures. With applying magnetic field, while clear quantum Hall effect is observed for ZnO 2DES, conductance across the junction oscillates with the filling factor of the quantum Hall states. We find that Andreev reflection is suppressed in the well developed quantum Hall regimes, which we interpret as a result of equal probabilities of normal and Andreev reflections as a result of multiple Andreev reflection at the 2DES/superconductor interface. △ Less

Submitted 17 October, 2018; originally announced October 2018.

Comments: 18 pages, 8 figures

Journal ref: J. Phys. Soc. Jpn. 87, 124712 (2018)

Topological quantum phase transition in magnetic topological insulator upon magnetization rotation

Authors: Minoru Kawamura, Masataka Mogi, Ryutaro Yoshimi, Atsushi Tsukazaki, Yusuke Kozuka, Kei. S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the… ▽ More We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 3 figures

Journal ref: Phys. Rev. B 98, 140404 (2018)

A cascade of phase transitions in an orbitally mixed half-filled Landau level

Authors: J. Falson, D. Tabrea, D. Zhang, I. Sodemann, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. H. Smet

Abstract: Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the gro… ▽ More Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the ground states at filling factor $ν$ = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the $N$ = 1 level and a compressible phase in N = 0, along with an unexpected Fermi-liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability ZnO offers for exploring exotic fractionalized electronic phases. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Journal ref: Science Advances 4, eaat8742 (2018)

Highly conductive PdCoO2 ultrathin films for transparent electrodes

Authors: T. Harada, K. Fujiwara, A. Tsukazaki

Abstract: We report on the successful synthesis of highly conductive PdCoO2 ultrathin films on Al2O3 (0001) by pulsed laser deposition. The thin films grow along the c-axis of the layered delafossite structure of PdCoO2, corresponding to the alternating stacking of conductive Pd layers and CoO2 octahedra. The thickness-dependent transport measurement reveals that each Pd layer has a homogeneous sheet conduc… ▽ More We report on the successful synthesis of highly conductive PdCoO2 ultrathin films on Al2O3 (0001) by pulsed laser deposition. The thin films grow along the c-axis of the layered delafossite structure of PdCoO2, corresponding to the alternating stacking of conductive Pd layers and CoO2 octahedra. The thickness-dependent transport measurement reveals that each Pd layer has a homogeneous sheet conductance as high as 5.5 mS in the samples thicker than the critical thickness of 2.1 nm. Even at the critical thickness, high conductivity exceeding 104 Scm-1 is achieved. Optical transmittance spectra exhibit high optical transparency of PdCoO2 thin films particularly in the near-infrared region. The concomitant high values of electrical conductivity and optical transmittance make PdCoO2 ultrathin films as promising transparent electrodes for triangular-lattice-based materials. △ Less

Submitted 10 April, 2018; originally announced April 2018.

Journal ref: APL Materials 6, 046107 (2018)

Observation of superparamagnetism in coexistence with quantum anomalous Hall C=$\pm$1 and C=0 Chern states

Authors: E. O. Lachman, M. Mogi, J. Sarkar, A. Uri, K. Bagani, Y. Anahory, Y. Maysoedov, M. E. Huber, A. Tsukazaki, M. Kawasaki, Y. Tokura, E. Zeldov

Abstract: Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanos… ▽ More Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanoscale magnetic islands is observed both in the plateau transition regions as well as within the fully quantized C=$\pm$1 Chern plateaus. Modulation do** of the topological insulator films is found to give rise to significantly larger superparamagnetic islands as compared to uniform magnetic do**, evidently leading to enhanced robustness of the quantum anomalous Hall effect. Nonetheless, even in this more robust quantum state, attaining full quantization of transport coefficients requires magnetic alignment of at least 95% of the superparamagnetic islands. The superparamagnetic order is also found within the incipient C=0 zero Hall plateau, which may host an axion state if the top and bottom magnetic layers are magnetized in opposite directions. In this regime, however, a significantly lower level of island alignment is found in our samples, hindering the formation of the axion state. Comprehension and control of superparamagnetic dynamics is thus a key factor in apprehending the fragility of the quantum anomalous Hall state and in enhancing the endurance of the different quantized states to higher temperatures for utilization of robust topological protection in novel devices. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Comments: 17 pages, 3 figures

Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

Authors: Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki, J. Smet

Abstract: We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlap** Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced mo… ▽ More We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlap** Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates. △ Less

Submitted 31 August, 2017; originally announced August 2017.

Comments: 4 pages, 3 figures

Tailoring tricolor structure of magnetic topological insulator for robust axion insulator

Authors: M. Mogi, M. Kawamura, A. Tsukazaki, R. Yoshimi, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such an exotic magnetoelectric coup… ▽ More Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such an exotic magnetoelectric coupling and can be expected to realize the TME effect as an axion insulator. Here we designed a magnetic TI with tricolor structure where a non-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic Cr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3. Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall conductivity plateaus, which are a hallmark of the axion insulator state, in a wide range of magnetic field between the coercive fields of Cr- and V-doped layers. The resistance of the axion insulator state reaches as high as 10^9 ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon the transition from the QAH state. The tricolor structure of TI may not only be an ideal arena for the topologically distinct phenomena, but also provide magnetoresistive applications for advancing dissipationless topological electronics. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Comments: 16 pages, 4 figures

Journal ref: Science Advances, 3, eaao1669 (2017)

Fabrication of tetragonal FeSe - FeS alloy films with high sulfur contents by alternate deposition

Authors: Kohei Fujiwara, Junichi Shiogai, Atsushi Tsukazaki

Abstract: We report the synthesis of tetragonal $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films ($x \leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS / FeSe layers. The out-of-plane latt… ▽ More We report the synthesis of tetragonal $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films ($x \leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS / FeSe layers. The out-of-plane lattice parameter of the films follows Vegard's law, demonstrating homogeneous alloying by inter-diffusion. The sulfur solid solubility reaches $x = 0.78$ in the $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films, which is by far larger than $x \approx 0.40$ in bulk governed by the tetragonal phase instability. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Comments: Accepted for publication in Jpn. J. Appl. Phys

Journal ref: Jpn. J. Appl. Phys. 56, 100308 (2017)

Quantized chiral edge conduction on reconfigurable domain walls of a magnetic topological insulator

Authors: K. Yasuda, M. Mogi, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, F. Kagawa, Y. Tokura

Abstract: The electronic orders in magnetic and dielectric materials form the domains with different signs of order parameters. The control of configuration and motion of the domain walls (DWs) enables gigantic, nonvolatile responses against minute external fields, forming the bases of contemporary electronics. As an extension of the DW function concept, we realize the one-dimensional quantized conduction o… ▽ More The electronic orders in magnetic and dielectric materials form the domains with different signs of order parameters. The control of configuration and motion of the domain walls (DWs) enables gigantic, nonvolatile responses against minute external fields, forming the bases of contemporary electronics. As an extension of the DW function concept, we realize the one-dimensional quantized conduction on the magnetic DWs of a topological insulator (TI). The DW of a magnetic TI is predicted to host the chiral edge state (CES) of dissipation-less nature when each magnetic domain is in the quantum anomalous Hall state. We design and fabricate the magnetic domains in a magnetic TI film with the tip of the magnetic force microscope, and clearly prove the existence of the chiral one-dimensional edge conduction along the prescribed DWs. The proof-of-concept devices based on the reconfigurable CES and Landauer-Buttiker formalism are exemplified for multiple-domain configurations with the well-defined DW channels. △ Less

Submitted 28 July, 2017; originally announced July 2017.

Comments: 11 pages, 4 figures

Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators

Authors: Minoru Kawamura, Ryutaro Yoshimi, Atsushi Tsukazaki, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that Hall electric field is relevant to the breakdown. We also find that electron transport is domina… ▽ More Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hop** (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 $μ$m. The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Comments: 5 pages, 4 figures, accepted for publication in PRL

Journal ref: Phys. Rev. Lett. 119, 016803 (2017)

Quantum Hall effect in a bulk antiferromagnet EuMnBi$_2$ with magnetically confined two-dimensional Dirac fermions

Authors: H. Masuda, H. Sakai, M. Tokunaga, Y. Yamasaki, A. Miyake, J. Shiogai, S. Nakamura, S. Awaji, A. Tsukazaki, H. Nakao, Y. Murakami, T. H. Arima, Y. Tokura, S. Ishiwata

Abstract: For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated with the extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a… ▽ More For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated with the extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We here report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi$_2$, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility more than 10,000 cm$^2$/Vs, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials. △ Less

Submitted 12 March, 2017; originally announced March 2017.

Comments: 26 pages, 4 figures, 1 table

Journal ref: Science Advances 2, e1501117 (2016)

Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures

Authors: Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. Smet

Abstract: We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us… ▽ More We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the 2D channel. Demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems, highlights remarkable universality of the phenomenon and its great promise to be used in studies of a wide variety of emerging 2D materials. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 041411(R) (2017)

Current-nonlinear Hall effect and spin-orbit torque magnetization switching in a magnetic topological insulator

Authors: K. Yasuda, A. Tsukazaki, R. Yoshimi, K. Kondou, K. S. Takahashi, Y. Otani, M. Kawasaki, Y. Tokura

Abstract: Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here… ▽ More Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here, we argue the second harmonic Hall voltage in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$. From the angular, temperature and magnetic field dependence, it is unambiguously shown that the large second harmonic Hall voltage in TI heterostructures is governed not by SOT but mainly by asymmetric magnon scattering mechanism without magnetization oscillation. Thus, this method does not allow an accurate estimation of spin Hall angle when magnons largely contribute to electron scattering. Instead, the SOT contribution in a TI heterostructure is exemplified by current pulse induced non-volatile magnetization switching, which is realized with a current density of $\sim 2.5 \times 10^{10} \mathrm{A/m}^2$, showing its potential as spintronic materials. △ Less

Submitted 22 December, 2016; v1 submitted 20 December, 2016; originally announced December 2016.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. Lett. 119, 137204 (2017)

Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator

Authors: K. Yasuda, A. Tsukazaki, R. Yoshimi, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders of magnitude larger than in other reported systems. From the magnetic field and temperature dependence, the UMR is identified to originate from the asymmetric… ▽ More We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders of magnitude larger than in other reported systems. From the magnetic field and temperature dependence, the UMR is identified to originate from the asymmetric scattering of electrons by magnons. In particular, the large magnitude of UMR is an outcome of spin-momentum locking and a small Fermi wavenumber at the surface of TI. In fact, the UMR is maximized around the Dirac point with the minimal Fermi wavenumber. △ Less

Submitted 19 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. Lett. 117, 127202 (2016)

Observation of topological Faraday and Kerr rotations in quantum anomalous Hall state by terahertz magneto-optics

Authors: K. N. Okada, Y. Takahashi, M. Mogi, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, N. Ogawa, M. Kawasaki, Y. Tokura

Abstract: Electrodynamic responses from three-dimensional (3D) topological insulators (TIs) are characterized by the universal magnetoelectric $E\cdot B$ term constituent of the Lagrangian formalism. The quantized magnetoelectric coupling, which is generally referred to as topological magnetoelectric (TME) effect, has been predicted to induce exotic phenomena including the universal low-energy magneto-optic… ▽ More Electrodynamic responses from three-dimensional (3D) topological insulators (TIs) are characterized by the universal magnetoelectric $E\cdot B$ term constituent of the Lagrangian formalism. The quantized magnetoelectric coupling, which is generally referred to as topological magnetoelectric (TME) effect, has been predicted to induce exotic phenomena including the universal low-energy magneto-optical effects. Here we report the experimental demonstration of the long-sought TME effect, which is exemplified by magneto-optical Faraday and Kerr rotations in the quantum anomalous Hall (QAH) states of magnetic TI surfaces by terahertz magneto-optics. The universal relation composed of the observed Faraday and Kerr rotation angles but not of any material parameters (e.g. dielectric constant and magnetic susceptibility) well exhibits the trajectory toward the fine structure constant $α$ $(= 2πe^2/hc \sim 1/137)$ in the quantized limit. Our result will pave a way for versatile TME effects with emergent topological functions. △ Less

Submitted 7 March, 2016; originally announced March 2016.

All-in-all-out magnetic domain wall conduction in pyrochlore iridate heterointerface

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, W. Sano, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation… ▽ More Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them with different lanthanide ions, the domain wall is controllably inserted at the heterointerface, the surface state being detected as anomalous conduction enhancement with a ferroic hysteresis. Our establishment paves the way for further investigation and manipulation of this new type of surface transport. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 064419 (2016)

Enhanced photogalvanic current in topological insulators via Fermi energy tuning

Authors: K. N. Okada, N. Ogawa, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: We achieve the enhancement of circular photogalvanic effect arising from the photo-injection of spins in topological insulator thin films by tuning the Fermi level ($E_{\rm F}$). A series of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films were tailored so that the Fermi energy ranges above 0.34 eV to below 0.29 eV of the Dirac point, i.e., from the bulk conduction band bottom to the valence band top throu… ▽ More We achieve the enhancement of circular photogalvanic effect arising from the photo-injection of spins in topological insulator thin films by tuning the Fermi level ($E_{\rm F}$). A series of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films were tailored so that the Fermi energy ranges above 0.34 eV to below 0.29 eV of the Dirac point, i.e., from the bulk conduction band bottom to the valence band top through the bulk in-gap surface-Dirac cone. The circular photogalvanic current, indicating a flow of spin-polarized surface-Dirac electrons, shows a pronounced peak when the $E_{\rm F}$ is set near the Dirac point and is also correlated with the carrier mobility. Our observation reveals that there are substantial scatterings between the surface-Dirac and bulkstate electrons in the generation process of spin-polarized photocurrent, which can be avoided by designing the electronic structure in topological insulators. △ Less

Submitted 17 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 081403(R) (2016)

All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, S. Ogawa, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic dom… ▽ More Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 ${\times}$ 60 $μ$m$^2$ channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 ${\times}$ 2 $μ$m$^2$ channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1-2 $μ$m. △ Less

Submitted 12 January, 2016; v1 submitted 11 January, 2016; originally announced January 2016.

Comments: 16 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 022402 (2016)

Magnetic modulation do** in topological insulators toward higher-temperature quantum anomalous Hall effect

Authors: M. Mogi, R. Yoshimi, A. Tsukazaki, K. Yasuda, Y. Kozuka, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about… ▽ More Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation do** into topological insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of the both surfaces based on non-Cr-doped (Bi,Sb)2Te3 films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-do** appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the highertemperature and zero magnetic-field quantum conduction. △ Less

Submitted 5 November, 2015; originally announced November 2015.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 182401 (2015)

Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators

Authors: K. Kondou, R. Yoshimi, A. Tsukazaki, Y. Fukuma, J. Matsuno, K. S. Takahashi, M. Kawasaki, Y. Tokura, Y. Otani

Abstract: The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi leve… ▽ More The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism. △ Less

Submitted 13 October, 2015; originally announced October 2015.

Comments: 20 pages, 3 figures

Journal ref: Nature Physics,12,11,1027-1031 (2016)