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Spin-momentum locking induced non-local voltage in topological insulator nanowire
Authors:
Jen-Ru Chen,
Pok-Lam Tse,
Ilya N. Krivorotov,
Jia G Lu
Abstract:
The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry w…
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The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual symmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.
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Submitted 18 September, 2020;
originally announced September 2020.
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Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
Authors:
**zhong Zhang,
Pok-Lam Tse,
Abdur-Rehman Jalil,
Jonas Kölzer,
Daniel Rosenbach,
Martina Luysberg,
Gregory Panaitov,
Hans Lüth,
Zhigao Hu,
Detlev Grützmacher,
Jia Grace Lu,
Thomas Schäpers
Abstract:
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determine…
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Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. Here, we report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations, a phase-coherence length of about 200nm at 0.5K is determined for the hole carriers. The distinct phase-coherence is confirmed by the observation of Aharonov--Bohm type oscillations for magnetic fields applied along the nanowire axis. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer on the nanowire surface. In addition, for Nb/GeTe-nanowire/Nb Josephson junctions, we obtained a proximity-induced critical current of about 0.2$μ$A at 0.4K. By applying a magnetic field perpendicular to the nanowire axis, the critical current decreases monotonously with increasing magnetic field, which indicates that the structure is in the small-junction-limit. Whereas, by applying a parallel magnetic field the critical current oscillates with a period of the magnetic flux quantum indicating once again the presence of a tubular hole channel.
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Submitted 15 September, 2020;
originally announced September 2020.
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Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires
Authors:
Pok-Lam Tse,
Laura Mugica-Sanchez,
Fugu Tian,
Oliver Ruger,
Andreas Undisz,
George Moethrath,
Susumu Takahashi,
Carsten Ronning,
Jia Grace Lu
Abstract:
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb…
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Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
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Submitted 15 August, 2020;
originally announced August 2020.
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1D to 3D Dimensional Crossover in the Superconducting Transition of the Quasi-One-Dimensional Carbide Superconductor Sc3CoC4
Authors:
Mingquan He,
Chi Ho Wong,
Dian Shi,
Pok Lam Tse,
Ernst-Wilhelm Scheidt,
Georg Eickerling,
Wolfgang Scherer,
** Sheng,
Rolf Lortz
Abstract:
The transition metal carbide superconductor Sc3CoC4 may represent a new benchmark system of quasi-1D superconducting behavior. We investigate the superconducting transition of a high-quality single crystalline sample by electrical transport experiments. Our data show that the superconductor goes through a complex dimensional crossover below the onset Tc of 4.5 K. First, a quasi-1D fluctuating supe…
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The transition metal carbide superconductor Sc3CoC4 may represent a new benchmark system of quasi-1D superconducting behavior. We investigate the superconducting transition of a high-quality single crystalline sample by electrical transport experiments. Our data show that the superconductor goes through a complex dimensional crossover below the onset Tc of 4.5 K. First, a quasi-1D fluctuating superconducting state with finite resistance forms in the CoC4 ribbons which are embedded in a Sc matrix in this material. At lower temperature, the transversal Josephson or proximity coupling of neighboring ribbons establishes a 3D bulk superconducting state. This dimensional crossover is very similar to Tl2Mo6Se6, which for a long time has been regarded as the most appropriate model system of a quasi-1D superconductor. Sc3CoC4 appears to be even more in the 1D limit than Tl2Mo6Se6.
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Submitted 29 October, 2014; v1 submitted 23 November, 2012;
originally announced November 2012.