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Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$
Authors:
Alex Hamill,
Brett Heischmidt,
Egon Sohn,
Daniel Shaffer,
Kan-Ting Tsai,
Xi Zhang,
Xiaoxiang Xi,
Alexey Suslov,
Helmuth Berger,
László Forró,
Fiona J. Burnell,
Jie Shan,
Kin Fai Mak,
Rafael M. Fernandes,
Ke Wang,
Vlad S. Pribiag
Abstract:
Two-dimensional transition metal dichalcogenides (TMDs) have been attracting significant interest due to a range of properties, such as layer-dependent inversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbit coupling (SOC). Of particular interest is niobium diselenide (NbSe2), whose superconducting state in few-layer samples is profoundly affected by an unusual type of SOC ca…
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Two-dimensional transition metal dichalcogenides (TMDs) have been attracting significant interest due to a range of properties, such as layer-dependent inversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbit coupling (SOC). Of particular interest is niobium diselenide (NbSe2), whose superconducting state in few-layer samples is profoundly affected by an unusual type of SOC called Ising SOC. Combined with the reduced dimensionality, the latter stabilizes the superconducting state against magnetic fields up to ~35 T and could lead to other exotic properties such as nodal and crystalline topological superconductivity. Here, we report transport measurements of few-layer NbSe$_2$ under in-plane external magnetic fields, revealing an unexpected two-fold rotational symmetry of the superconducting state. In contrast to the three-fold symmetry of the lattice, we observe that the magnetoresistance and critical field exhibit a two-fold oscillation with respect to an applied in-plane magnetic field. We find similar two-fold oscillations deep inside the superconducting state in differential conductance measurements on NbSe$_2$/CrBr$_3$ superconductor-magnet junctions. In both cases, the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute the behavior to the mixing between two closely competing pairing instabilities, namely, the conventional s-wave instability typical of bulk NbSe$_2$ and an unconventional d- or p-wave channel that emerges in few-layer NbSe2. Our results thus demonstrate the unconventional character of the pairing interaction in a few-layer TMD, opening a new avenue to search for exotic superconductivity in this family of 2D materials.
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Submitted 6 April, 2020;
originally announced April 2020.
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Correlated Insulating States and Transport Signature of Superconductivity in Twisted Trilayer Graphene Moiré of Moiré Superlattices
Authors:
Kan-Ting Tsai,
Xi Zhang,
Ziyan Zhu,
Yujie Luo,
Stephen Carr,
Mitchell Luskin,
Efthimios Kaxiras,
Ke Wang
Abstract:
Layers of two-dimensional materials stacked with a small twist-angle give rise to beating periodic patterns on a scale much larger than the original lattice, referred to as a moiré superlattice. When the stacking involves more than two layers with independent twist angles between adjacent layers, it generates moiré of moiré superlattices, with multiple length scales that control the system's behav…
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Layers of two-dimensional materials stacked with a small twist-angle give rise to beating periodic patterns on a scale much larger than the original lattice, referred to as a moiré superlattice. When the stacking involves more than two layers with independent twist angles between adjacent layers, it generates moiré of moiré superlattices, with multiple length scales that control the system's behavior. Here we demonstrate these effects of a high-order moiré superlattice in twisted trilayer graphene with two consecutive small twist angles. We report correlated insulating states near the half filling of the moiré of moiré superlattice at an extremely low carrier density (~1010 cm-2), near which we also report a zero-resistance transport behavior typically expected in a 2D superconductor. Moreover, the temperature dependence of the measured resistances at full-occupancy (v = -4 and v = 4) states are semi-metallic, distinct from the insulating behavior of twisted bilayer systems, providing the first demonstration of emergent correlated transport behaviors from continuous, non-isolated higher-order moiré flat bands. Our findings shed new insights into the microscopic mechanisms of moiré correlated states and provide the impetus for future studies on this material platform, such as the demonstration of phase coherence and Meissner-like effect.
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Submitted 1 December, 2020; v1 submitted 6 December, 2019;
originally announced December 2019.
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Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures
Authors:
Ikai Lo,
M. H. Gau,
J. K. Tsai,
Y. L. Chen,
Z. J. Chang,
W. T. Wang,
J. C. Chiang,
T. Aggerstam
Abstract:
We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling o…
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We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the k-dependent spin splitting at high values of k is attributed to Dresselhaus term which is enhanced by the Delta C1-Delta C3 coupling of wurtzite band folding effect.
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Submitted 9 November, 2006; v1 submitted 15 September, 2006;
originally announced September 2006.
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Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect
Authors:
Ikai Lo,
J. K. Tsai,
M. H. Gau,
Y. L. Chen,
Z. J. Chang,
W. T. Wang,
J. C. Chiang,
K. R. Wang,
Chun-Nan Chen,
T. Aggerstam
Abstract:
The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 f…
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The electronic properties of Fe-doped Al0.31Ga0.69N/GaN heterostructures have been studied by Shubnikov-de Haas measurement. Two subbands of the two-dimensional electron gas in the hetero-interface were populated. After the low temperature illumination, the electron density increases from 11.99 x 1012 cm-2 to 13.40 x 1012 cm-2 for the first subband and from 0.66 x 1012 cm-2 to 0.94 x 1012 cm-2 for the second subband. The persistent photoconductivity effect (~13% increase) is mostly attributed to the Fe-related deep-donor level in GaN layer. The second subband starts to populate when the first subband is filled at a density n1 = 9.40 x 1012 cm-2. We calculate the energy separation between the first and second subbands to be 105 meV.
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Submitted 14 September, 2006;
originally announced September 2006.
