Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2
Authors:
Jun Suk Kim,
Minh Dao Tran,
Sung-Tae Kim,
Daehan Yoo,
Sang-Hyun Oh,
Ji-Hee Kim,
Young Hee Lee
Abstract:
Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurre…
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Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurrent measurements by fabricating the dual-gate P-N junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2Eg, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.
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Submitted 26 October, 2020;
originally announced October 2020.
Bandgap renormalization in monolayer MoS_2 on CsPbBr_3 quantum dot via charge transfer at room temperature
Authors:
Subash Adhikari,
Ji-Hee Kim,
Bumsub Song,
Manh-Ha Doan,
Minh Dao Tran,
Leyre Gomez,
Hyun Kim,
Hamza Zad Gul,
Ganesh Ghimire,
Seok Joon Yun,
Tom Gregorkiewicz,
Young Hee Lee
Abstract:
Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmen…
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Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting. This renormalization phenomenon has been commonly observed at low temperature and requires high photon excitation density. Here, we present the augmented bandgap renormalization in monolayer MoS_2 anchored on CsPbBr_3 perovskite quantum dots at room temperature via charge transfer. The amount of electrons significantly transferred from perovskite gives rise to the large plasma screening in MoS_2. The bandgap in heterostructure is red-shifted by 84 meV with minimal pump fluence, the highest bandgap renormalization in monolayer MoS_2 at room temperature, which saturates with further increase of pump fluence. We further find that the magnitude of bandgap renormalization inversely relates to Thomas-Fermi screening length. This provides plenty of room to explore the bandgap renormalization within existing vast libraries of large bandgap van der Waals heterostructure towards practical devices such as solar cells, photodetectors and light-emitting-diodes.
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Submitted 26 October, 2020;
originally announced October 2020.
