Regulate the direct-indirect electronic band gap transition by electron-phonon interaction in BaSnO3
Authors:
Binru Zhao,
Qing Huang,
Jiangtao Wu,
**long Jiao,
Mingfang Shu,
Gaoting Lin,
Qiyang Sun,
Ranran Zhang,
Masato Hagihala,
Shuki Torri,
Guohua Wang,
Qingyong Ren,
Chen Li,
Zhe Qu,
Haidong Zhou,
Jie Ma
Abstract:
The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-do** Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to…
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The neutron powder diffraction, specific heat, thermal conductivity, and Raman scattering measurements were presented to study the interplays of lattice, phonons and electrons of the Sr-do** Ba1-xSrxSnO3 (x was less than or equal to 0.1). Although Ba1-xSrxSnO3 kept the cubic lattice, the Raman spectra suggested a dynamic distortion at low temperature. The density functional theory was applied to analyze the electronic structures and phonon dispersions of Ba1-xSrxSnO3(x = 0, 0.0125), and the behaviors of electron bands around Fermi levels were discussed. According to the experimental and theoretical results, the Sr-do** played a significant role in tuning the indirect band gap of BaSnO3 and influenced the electron-phonon interaction.
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Submitted 11 April, 2022; v1 submitted 13 November, 2021;
originally announced November 2021.
Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
Authors:
Qingyong Ren,
Chenguang Fu,
Qinyi Qiu,
Shengnan Dai,
Zheyuan Liu,
Takatsugu Masuda,
Shinichiro Asai,
Masato Hagihala,
Sanghyun Lee,
Shuki Torri,
Takashi Kamiyama,
Lunhua He,
Xin Tong,
Claudia Felser,
David J. Singh,
Tiejun Zhu,
Jiong Yang,
Jie Ma
Abstract:
Chemical do** is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical do** lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical do** plays multiple roles for both electron and phonon transport properties in…
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Chemical do** is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical do** lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical do** plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical do** brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance.
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Submitted 22 June, 2020; v1 submitted 25 March, 2020;
originally announced March 2020.
