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Diverse Responses in Lattice Thermal Conductivity of $n$-type/$p$-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Han Xie,
Meng An,
Chuang Zhang,
Xiongfei Zhu,
Chen Huang,
Yucheng Xiong,
Xiangjun Liu
Abstract:
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-…
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Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of $p$-type do** compared to $n$-type do** in the same semiconductor at high charge carrier concentrations. The stronger EPI in $p$-type do** is attributed to the relatively higher electron density of states caused by the relatively larger $p$-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the $s$-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be attributed to asymmetric EPIs.
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Submitted 17 June, 2024;
originally announced June 2024.
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Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Meng An,
Xiongfei Zhu,
Chuang Zhang,
Xiangchuan Chen,
Yucheng Xiong,
Thomas Frauenheim,
Xiangjun Liu
Abstract:
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressi…
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4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.
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Submitted 20 June, 2024; v1 submitted 4 June, 2024;
originally announced June 2024.
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Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
Authors:
Jianshi Sun,
Shouhang Li,
Zhen Tong,
Cheng Shao,
Xiangchuan Chen,
Qianqian Liu,
Yucheng Xiong,
Meng An,
Xiangjun Liu
Abstract:
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy do**. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich inter…
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Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy do**. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fröhlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-bandgap semiconductors, including $β$-Ga2O3, AlN, and ZnO.
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Submitted 5 May, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.
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A gate-tunable quantum phase transition in a topological excitonic insulator
Authors:
Yande Que,
Yang-Hao Chan,
Junxiang Jia,
Anirban Das,
Zhengjue Tong,
Yu-Tzu Chang,
Zhenhao Cui,
Amit Kumar,
Gagandeep Singh,
Hsin Lin,
Shantanu Mukherjee,
Bent Weber
Abstract:
Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlap** valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2), in which a 2D topologi…
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Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlap** valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2, in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, we show that WTe2 is susceptible to a gate-tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field-effect do**. Such gate tunability of a 2D TEI, into either n- and p-type semimetals, promises novel handles of control over non-trivial 2D superconductivity with excitonic pairing.
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Submitted 28 September, 2023;
originally announced September 2023.
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Performance benchmarking of an ultra-low vibration laboratory to host a commercial millikelvin scanning tunnelling microscope
Authors:
Yande Que,
Amit Kumar,
Michael S. Lodge,
Zhengjue Tong,
Marcus Lai Kar Fai,
Wei Tao,
Zhenhao Cui,
Ranjith Shivajirao,
Junxiang Jia,
Siew Eang Lee,
Bent Weber
Abstract:
Ultra-low temperature scanning tunnelling microscopy and spectroscopy (STM/STS) achieved by dilution refrigeration can provide unrivalled insight into the local electronic structure of quantum materials and atomic-scale quantum systems. Effective isolation from mechanical vibration and acoustic noise is critical in order to achieve ultimate spatial and energy resolution. Here, we report on the des…
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Ultra-low temperature scanning tunnelling microscopy and spectroscopy (STM/STS) achieved by dilution refrigeration can provide unrivalled insight into the local electronic structure of quantum materials and atomic-scale quantum systems. Effective isolation from mechanical vibration and acoustic noise is critical in order to achieve ultimate spatial and energy resolution. Here, we report on the design and performance of an ultra-low vibration (ULV) laboratory hosting a customized but otherwise commercially available 40mK STM. The design of the vibration isolation consists of a T-shaped concrete mass block (55t), suspended by actively controlled pneumatic springs, and placed on a foundation separated from the surrounding building in a "room-within-a-room" design. Vibration levels achieved are meeting the VC-M vibration standard at >3 Hz, reached only in a limited number of laboratories worldwide. Measurement of the STM's junction noise confirms effective vibration isolation on par with custom built STMs in ULV laboratories. In this tailored low-vibration environment, the STM achieves an energy resolution of 43ueV (144 mK), promising for the investigation and control of quantum matter at atomic length scales.
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Submitted 1 August, 2023;
originally announced August 2023.
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Theoretical Puncture Mechanics of Soft Compressible Solids
Authors:
Stefano Fregonese,
Zhiyuan Tong,
Sibo Wang,
Mattia Bacca
Abstract:
Accurate prediction of the force required to puncture a soft material is critical in many fields like medical technology, food processing, and manufacturing. However, such a prediction strongly depends on our understanding of the complex nonlinear behavior of the material subject to deep indentation and complex failure mechanisms. Only recently we developed theories capable of correlating puncture…
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Accurate prediction of the force required to puncture a soft material is critical in many fields like medical technology, food processing, and manufacturing. However, such a prediction strongly depends on our understanding of the complex nonlinear behavior of the material subject to deep indentation and complex failure mechanisms. Only recently we developed theories capable of correlating puncture force with material properties and needle geometry. However, such models are based on simplifications that seldom limit their applicability to real cases. One common assumption is the incompressibility of the cut material, albeit no material is truly incompressible. In this paper we propose a simple model that accounts for linearly elastic compressibility, and its interplay with toughness, stiffness, and elastic strain-stiffening. Confirming previous theories and experiments, materials having high-toughness and low-modulus exhibit the highest puncture resistance at a given needle radius. Surprisingly, in these conditions, we observe that incompressible materials exhibit the lowest puncture resistance, where volumetric compressibility can create an additional (strain) energy barrier to puncture. Our model provides a valuable tool to assess the puncture resistance of soft compressible materials and suggests new design strategies for sharp needles and puncture-resistant materials.
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Submitted 26 April, 2023;
originally announced April 2023.
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Multi-material topology optimization of adhesive backing layers via J-integral and strain energy minimizations
Authors:
Zhiyuan Tong,
Farid H. Benvidi,
Mattia Bacca
Abstract:
Strong adhesives rely on reduced stress concentrations, often obtained via specific geometry or composition of materials. In many examples in nature and engineering prototypes, the adhesive performance relies on structural rigidity being placed in specific locations. A few design principles have been formulated, based on parametric optimization, while a general design tool is still missing. We pro…
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Strong adhesives rely on reduced stress concentrations, often obtained via specific geometry or composition of materials. In many examples in nature and engineering prototypes, the adhesive performance relies on structural rigidity being placed in specific locations. A few design principles have been formulated, based on parametric optimization, while a general design tool is still missing. We propose to use topology optimization to achieve optimal stiffness distribution in a multi-material adhesive backing layer, reducing stress concentration at specified locations. The method involves the minimization of a linear combination of J-integral and strain energy. While the J-integral minimization is aimed at reducing stress concentration, we observe that the combination of these two objectives ultimately provides the best results. We analyze three cases in plane strain conditions, namely (i) double-edged crack and (ii) center crack in tension and (iii) edge crack under shear. Each case evidences a different optimal topology with (i) and (ii) providing similar results. The optimal topology allocates stiffness in regions that are far away from the crack tip, intuitively, but the allocation of softer materials over stiffer ones can be non-trivial. To test our solutions, we plot the contact stress distribution across the interface. In all observed cases, we eliminate the stress singularity at the crack tip. Stress concentrations might arise in locations far away from the crack tip, but the final results are independent of crack size. Our method ultimately provides optimal, flaw tolerant, adhesives where the crack location is known.
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Submitted 22 June, 2023; v1 submitted 9 October, 2022;
originally announced October 2022.
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Multi-Band Superconductivity in Strongly Hybridized 1T'-WTe$_2$/NbSe$_2$ Heterostructures
Authors:
Wei Tao,
Zheng Jue Tong,
Anirban Das,
Duc-Quan Ho,
Yudai Sato,
Masahiro Haze,
Junxiang Jia,
K. E. Johnson Goh,
BaoKai Wang,
Hsin Lin,
Arun Bansil,
Shantanu Mukherjee,
Yukio Hasegawa,
Bent Weber
Abstract:
The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interf…
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The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer 1T'-WTe$_2$, grown on NbSe$_2$ by van-der-Waals epitaxy. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500~mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations which captures the multi-band superconductivity inherent to the NbSe$_2$ substrate and that induced by proximity in WTe$_2$, self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively, and confirms that strong inter-layer hop** gives rise to a semi-metallic density of states in the 2D WTe$_2$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter $Δ\simeq 0.6$~meV induced in the WTe$_2$ monolayer bulk, stable beyond a 2~T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial map** of induced order parameters in proximitized atomically thin topological materials.
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Submitted 10 March, 2022;
originally announced March 2022.
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On the Temperature-dependent Characteristics of Perpendicular Shape Anisotropy-Spin Transfer Torque-Magnetic Random Access Memories (PSA-STT-MRAMs)
Authors:
Wei Zhang,
Zihan Tong,
Yuzan Xiong,
Weigang Wang,
Qiming Shao
Abstract:
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers. At such a volume size, the nanopillar can be effectively modeled…
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The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the nanomagnet. Such a concept is particularly well-suited for small junctions down to a few nanometers. At such a volume size, the nanopillar can be effectively modeled as a Stoner-Wohlfarth (SW) particle, and the shape anisotropy scales with the spontaneous magnetization by ~ Ms^2. For almost all ferromagnets, Ms is a strong function of temperature, therefore, the temperature-dependent shape anisotropy is an important factor to be considered in any modeling of the temperature-dependent performance of PSA-STT-MRAMs. In this work, we summarize and discuss various possible temperature-dependent contributions to the thermal stability factor and coercivity of the PSA-STT-MRAMs by modeling and comparing different temperature scaling and parameters. We reveal nontrivial corrections to the thermal stability factor by considering both temperature-dependent shape and interfacial anisotropies. The coercivity, blocking temperature, and electrical switching characteristics that resulted from incorporating such a temperature dependence are also discussed, in conjugation with the nanomagnet dimension and coherence volume.
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Submitted 17 May, 2021;
originally announced May 2021.
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CTRAMER: An open source software package for correlating interfacial charge transfer rate constants with donor acceptor geometries in organic photovoltaic materials
Authors:
Jacob Tinnin,
Huseyin Aksu,
Zhengqing Tong,
Pengzhi Zhang,
Eitan Geva,
Barry D. Dunietz,
Xiang Sun,
Margaret S. Cheung
Abstract:
In this paper we present CTRAMER (Charge Transfer RAtes from Molecular dynamics, Electronic structure, and Rate theory), an open source software package for calculating interfacial charge transfer (CT) rate constants in organic photovoltaic (OPV) materials based on ab initio calculations and molecular dynamics simulations. The software is based on identifying representative donor acceptor geometri…
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In this paper we present CTRAMER (Charge Transfer RAtes from Molecular dynamics, Electronic structure, and Rate theory), an open source software package for calculating interfacial charge transfer (CT) rate constants in organic photovoltaic (OPV) materials based on ab initio calculations and molecular dynamics simulations. The software is based on identifying representative donor acceptor geometries within interfacial structures obtained from molecular dynamics simulation of donor acceptor blends and calculating the corresponding Fermi s golden rule CT rate constants within the framework of the linearized semiclassical approximation. While the methods used are well established, the integration of these state of the art ideas from different disciplines to study photoinduced CT between excited states and explicit environment, in our opinion, makes this package unique and innovative. The software also provides tools for plotting other observables of interest. After outlining the features and implementation details, usage and performance of the software are demonstrated with results from an example OPV system.
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Submitted 12 May, 2021;
originally announced May 2021.
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Phononic thermal transport along graphene grain boundaries
Authors:
Zhen Tong,
Alessandro Pecchia,
ChiYung Yam,
Traian Dumitricǎ,
Thomas Frauenheim
Abstract:
We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($κ_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Green's function calculations and s…
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We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($κ_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Green's function calculations and spectral energy density analysis indicate that $κ_p$ is the complex manifestation of the periodic strain field, which behaves as a reflective diffraction grating with both diffuse and specular phonon reflections, and represents a source of anharmonic phonon-phonon scattering. Our findings provide new insights into the integrity of the phononic thermal transport in GB graphene.
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Submitted 9 April, 2021;
originally announced April 2021.
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Ultralow thermal conductivity in two-dimensional MoO$_3$
Authors:
Zhen Tong,
Traian Dumitrică,
Thomas Frauenheim
Abstract:
Monolayer molybdenum trioxide (MoO$_3$) is an emerging two-dimensional (2D) material with high electrical conductivity. Using first-principles calculations and a Boltzmann transport theoretical framework, we predict record low room-temperature phonon thermal conductivity ($κ_p$) of 1.57 W/mK and 1.26 W/mK along the principal in-plane directions of MoO$_3$ monolayer. The behavior is attributed to t…
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Monolayer molybdenum trioxide (MoO$_3$) is an emerging two-dimensional (2D) material with high electrical conductivity. Using first-principles calculations and a Boltzmann transport theoretical framework, we predict record low room-temperature phonon thermal conductivity ($κ_p$) of 1.57 W/mK and 1.26 W/mK along the principal in-plane directions of MoO$_3$ monolayer. The behavior is attributed to the combination of soft flexural and in-plane acoustic modes, which are coupled through the finite layer thickness, and to the strong bonding anharmonicity, which gives rise to significant 3- and 4-phonon scattering events. These insights suggest new indicators for guiding the search of 2D materials with low $κ_p$. Our result motivates experimental $κ_p$ measurements in MoO$_3$, and its applications as a thermoelectric and thermally protective material.
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Submitted 7 March, 2021; v1 submitted 4 March, 2021;
originally announced March 2021.
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Atomistic metrics of BaSO$_4$ as an ultra-efficient radiative cooling material: a first-principles prediction
Authors:
Zhen Tong,
Joseph Peoples,
Xiangyu Li,
Xiaolong Yang,
Hua Bao,
Xiulin Ruan
Abstract:
Radiative cooling has recently revived due to its significant potential as an environmentally friendly cooling technology. However, the design of particle-matrix cooling nanocomposites was generally carried out via tedious trial-and-error approaches, and the atomistic physics for efficient radiative cooling was not well understood. In this work, we identify the atomistic metrics of Barium Sulfate…
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Radiative cooling has recently revived due to its significant potential as an environmentally friendly cooling technology. However, the design of particle-matrix cooling nanocomposites was generally carried out via tedious trial-and-error approaches, and the atomistic physics for efficient radiative cooling was not well understood. In this work, we identify the atomistic metrics of Barium Sulfate (BaSO$_4$) nanocomposite, which is an ultra-efficient radiative cooling material, using a predictive first-principles approach coupled with Monte Carlo simulations. Our results show that BaSO$_4$-acrylic nanocomposites not only attain high total solar reflectance of 92.5% (0.28 - 4.0 um), but also simultaneously demonstrate high normal emittance of 96.0% in the sky window region (8 - 13 um), outperforming the commonly used $α$-quartz ($α$-SiO$_2$). We identify two pertinent characters of ultra-efficient radiative cooling paints: i) a balanced band gap and refractive index, which enables strong scattering while negating absorption in the solar spectrum, and ii) a sufficient number of infrared-active optical resonance phonon modes resulting in abundant Reststrahlen bands and high emissivity in the sky window. The first principles approach and the resulted physical insights in this work pave the way for further search of ultra-efficient radiative cooling materials.
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Submitted 21 January, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions
Authors:
Shouhang Li,
Ao Wang,
Yue Hu,
Xiaokun Gu,
Zhen Tong,
Hua Bao
Abstract:
Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon fr…
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Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon frequency gaps. The phonon thermal conductivity is reduced by two orders of magnitude as the phonon-isotope and phonon-electron scatterings are considered, which also induce the nontrivial temperature-independent behavior of phonon thermal conductivity. Nesting Fermi surfaces exist in both TiN and HfN, which cause the strong electron-phonon coupling strengths and heavily harm the transport of phonons and electrons. The phonon component takes an abnormally large ratio in total thermal conductivity, as 29% for TiN and 26% for HfN at 300 K. The results for thin films are also presented and it is shown that the phonon thermal conductivity can be efficiently limited by size. Our findings provide a deep understanding on the thermal transport in metallic TMNs and expand the scope of heat conduction theory in metal.
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Submitted 27 June, 2020;
originally announced June 2020.
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Thermal conductivity and Lorenz ratio of metals at intermediate temperature: a first-principles analysis
Authors:
Shouhang Li,
Zhen Tong,
Xinyu Zhang,
Hua Bao
Abstract:
Electronic and phononic thermal conductivity are involved in the thermal conduction for metals and Wiedemann-Franz law is usually employed to predict them separately. However, Wiedemann-Franz law is shown to be invalid at intermediate temperatures. Here, to obtain the accurate thermal conductivity and Lorenz ratio for metals, the momentum relaxation time is used for electrical conductivity and ene…
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Electronic and phononic thermal conductivity are involved in the thermal conduction for metals and Wiedemann-Franz law is usually employed to predict them separately. However, Wiedemann-Franz law is shown to be invalid at intermediate temperatures. Here, to obtain the accurate thermal conductivity and Lorenz ratio for metals, the momentum relaxation time is used for electrical conductivity and energy relaxation time for electronic thermal conductivity. The mode-level first-principles calculation is conducted on two representative metals copper and aluminum. It is shown that the method can correctly predict electrical transport coefficients from 6 to 300 K. Also, the anomalous Lorenz ratio is observed within the present scheme, which has significant departure from the Sommerfeld value. The calculation scheme can be expanded to other metallic systems and is valuable in a better understanding of the electron dynamics and transport properties of metals.
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Submitted 19 April, 2020;
originally announced April 2020.
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The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)
Authors:
Evan Witkoske,
Zhen Tong,
Yining Feng,
Xiulin Ruan,
Mark Lundstrom,
Na Lu
Abstract:
Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and therma…
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Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and thermal properties to achieve high zT values and low cost/kW-hr devices. In this work, the strain-dependent lattice thermal conductivity of 2H $CuAlO_{2}$ is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. While the average bulk thermal conductivity is around 32 W/(K-m) at room temperature, it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nm to 30nm at room temperature. We find that strain can offer both an increase as well as a decrease in the thermal conductivity as expected, however the overall inclusion of small grain sizes dictates the potential for low thermal conductivity in this material.
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Submitted 13 December, 2019;
originally announced December 2019.
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A comprehensive first-principles analysis of phonon thermal conductivity and electron-phonon coupling in different metals
Authors:
Zhen Tong,
Shouhang Li,
Xiulin Ruan,
Hua Bao
Abstract:
Separating electron and phonon thermal conductivity components is imperative for understanding the principle thermal transport mechanisms in metals and highly desirable in many applications. In this work, we predict the mode-dependent electron and phonon thermal conductivities of 18 different metals at room-temperature from first-principles. Our first-principles predictions, in general, agree well…
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Separating electron and phonon thermal conductivity components is imperative for understanding the principle thermal transport mechanisms in metals and highly desirable in many applications. In this work, we predict the mode-dependent electron and phonon thermal conductivities of 18 different metals at room-temperature from first-principles. Our first-principles predictions, in general, agree well with experimental data. We find that the phonon thermal conductivity is in the range of 2 - 18 $W/mK$, which accounts for 1% - 40% of the total thermal conductivity. It is also found that the phonon thermal conductivities in transition metals and transition-intermetallic-compounds (TICs) are non-negligible compared to noble metals due to their high phonon group velocities. Besides, the electron-phonon coupling effect on phonon thermal conductivity in transition metals and intermetallic compounds is stronger than that of nobles, which is attributed to the larger electron-phonon coupling constant with a high electron density of state within Fermi window and high phonon frequency. The noble metals have higher electron thermal conductivities compared to transition metals and TICs, which is mainly due to the weak electron-phonon coupling in noble metals. It is also shown that the Lorenz ratios of transition metals and transition-intermetallic-compounds hold larger deviations from the Sommerfeld value $L_0=2.44 \times 10^{-8} W ΩK^{-2}$. We also find the mean free paths (MFPs) for phonon (within 10 nm) are smaller than those of electron (5 - 25 nm). The electrical conductivity and electron thermal conductivity are strongly related to the MFPs of the electron.
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Submitted 2 July, 2019;
originally announced July 2019.
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Decoherence in Two Bose-Einstein Condensates
Authors:
Le-Man Kuang,
Zhao-Yang Tong,
Zhong-Wen Ouyang,
Hao-Sheng Zeng
Abstract:
In this paper, decoherence in a system consisting of two Bose-Einstein condensates is investigated analytically.
It is indicated that decoherence can be controlled through manipulating the interaction between the system and environment.
The influence of the decoherence on quantum coherent atomic tunneling (AT) between two condensates with arbitrary initial states is studied in detail. Analytic…
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In this paper, decoherence in a system consisting of two Bose-Einstein condensates is investigated analytically.
It is indicated that decoherence can be controlled through manipulating the interaction between the system and environment.
The influence of the decoherence on quantum coherent atomic tunneling (AT) between two condensates with arbitrary initial states is studied in detail. Analytic expressions of the population difference (PD) and the AT current between two condensates are found. It is shown that the decoherence leads to the decay of the PD and the suppression of the AT current.
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Submitted 27 March, 2000;
originally announced March 2000.
