Showing 1–33 of 33 results for author: Thewalt, M L W

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

Authors: Santiago Serrano, MengKe Feng, Wee Han Lim, Amanda E. Seedhouse, Tuomo Tanttu, Will Gilbert, Christopher C. Escott, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we pr… ▽ More High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Journal ref: PRX QUANTUM 5, 010301 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Coherent control of electron spin qubits in silicon using a global field

Authors: E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H. -J. Pohl, M. L. W. Thewalt, A. Laucht, A. S. Dzurak, J. J. Pla

Abstract: Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges… ▽ More Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technology, realising a quantum computer with the millions of qubits required to run some of the most demanding quantum algorithms poses several outstanding challenges, including how to control so many qubits simultaneously. Recently, compact 3D microwave dielectric resonators were proposed as a way to deliver the magnetic fields for spin qubit control across an entire quantum chip using only a single microwave source. Although spin resonance of individual electrons in the globally applied microwave field was demonstrated, the spins were controlled incoherently. Here we report coherent Rabi oscillations of single electron spin qubits in a planar SiMOS quantum dot device using a global magnetic field generated off-chip. The observation of coherent qubit control driven by a dielectric resonator establishes a credible pathway to achieving large-scale control in a spin-based quantum computer. △ Less

Submitted 6 October, 2021; v1 submitted 30 July, 2021; originally announced July 2021.

Journal ref: npj Quantum Information 8, 126 (2022)

Characterization of the T center in $^{28}$Si

Authors: L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. Simmons

Abstract: Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, altho… ▽ More Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, although very few of these are known to be in the highly desirable telecommunications bands, and those that do often do not couple strongly to light. Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in $^{28}$Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. The T center is thus a promising contender for the hybridization of silicon's two leading quantum technology platforms. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 13 pages, 10 figures

A silicon-integrated telecom photon-spin interface

Authors: L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. Simmons

Abstract: Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon d… ▽ More Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Journal ref: PRX Quantum 1, 020301 (2020)

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Authors: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L. W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J. L. Morton

Abstract: Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such… ▽ More Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms. △ Less

Submitted 28 December, 2020; v1 submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 11, 054014 (2019)

Dissipative discrete time crystals

Authors: James O'Sullivan, Oliver Lunt, Christoph W. Zollitsch, M. L. W. Thewalt, John J. L. Morton, Arijeet Pal

Abstract: Periodically driven quantum systems host a range of non-equilibrium phenomena which are unrealizable at equilibrium. Discrete time-translational symmetry in a periodically driven many-body system can be spontaneously broken to form a discrete time crystal, a putative quantum phase of matter. We present the observation of discrete time crystalline order in a driven system of paramagnetic $P$ -donor… ▽ More Periodically driven quantum systems host a range of non-equilibrium phenomena which are unrealizable at equilibrium. Discrete time-translational symmetry in a periodically driven many-body system can be spontaneously broken to form a discrete time crystal, a putative quantum phase of matter. We present the observation of discrete time crystalline order in a driven system of paramagnetic $P$ -donor impurities in isotopically enriched $^{28}Si$ cooled below $10$ K. The observations exhibit a stable subharmonic peak at half the drive frequency which remains pinned even in the presence of pulse error, a signature of DTC order. We propose a theoretical model based on the paradigmatic central spin model which is in good agreement with experimental observations, and investigate the role of dissipation in the stabilisation of the DTC. Both experiment and theory indicate that the order in this system is primarily a dissipative effect, and which persists in the presence of spin-spin interactions. We present a theoretical phase diagram as a function of interactions and dissipation for the central spin model which is consistent with the experiments. This opens up questions about the interplay of coherent interaction and dissipation for time-translation symmetry breaking in many-body Floquet systems. △ Less

Submitted 8 June, 2019; v1 submitted 25 July, 2018; originally announced July 2018.

Comments: 7+3 pages, 6 figures, Added new phase diagram and detailed comparison with experiments

NMR study of optically hyperpolarized phosphorus donor nuclei in silicon

Authors: P. Gumann, H. Haas, S. Sheldon, L. Zhu, M. L. W. Thewalt, D. G. Cory, C. Ramanathan

Abstract: We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The $30$ kHz spectral linewidth observed is dramatically larger than the 600 Hz linewidth observed from a $^{28}$Si-enriched silicon crystal. We show that the o… ▽ More We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the $^{31}$P spins in low-doped (N$_D =6\times10^{15}$ cm$^{-3}$) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The $30$ kHz spectral linewidth observed is dramatically larger than the 600 Hz linewidth observed from a $^{28}$Si-enriched silicon crystal. We show that the observed broadening is consistent with previous ENDOR results showing discrete isotope mass effect contributions to the donor hyperfine coupling. A secondary source of broadening is likely due to variations in the local strain, induced by the random distribution of different isotopes in natural silicon. The nuclear spin T$_1$ and the build-up time for the optically-induced $^{31}$P hyperpolarization in the natural abundance silicon sample were observed to be $178\pm47$ s and $69\pm6$ s respectively, significantly shorter than the values previously measured in $^{28}$Si-enriched samples under the same conditions. We also measured the T$_1$ and hyperpolarization build-up time for the $^{31}$P signal in natural abundance silicon at 9.4 T to be $54\pm31$ s and $13\pm2$ s respectively. The shorter build-up and nuclear spin T$_1$ times at high field are likely due to the shorter electron-spin T$_1$, which drives nuclear spin relaxation via non-secular hyperfine interactions. At 6.7 T, the phosphorus nuclear spin T$_{2}$ was measured to be $16.7\pm1.6$ ms at 4.2 K, a factor of 4 shorter than in $^{28}$Si-enriched crystals. This was observed to further shorten to $1.9\pm0.4$ ms in the presence of the infra-red laser. △ Less

Submitted 23 July, 2018; originally announced July 2018.

Comments: 5 pages

Journal ref: Phys. Rev. B 98, 180405 (2018)

Dynamical decoupling of interacting dipolar spin ensembles

Authors: Evan S. Petersen, A. M. Tyryshkin, K. M. Itoh, Joel W. Ager, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. A. Lyon

Abstract: We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by th… ▽ More We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 10 pages, 5 figures

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

Authors: John Mansir, Pierandrea Conti, Zai** Zeng, Jarryd J. Pla, Patrice Bertet, Michael W. Swift, Chris G. Van de Walle, Mike L. W. Thewalt, Benoit Sklenard, Yann-Michel Niquet, John J. L. Morton

Abstract: We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding… ▽ More We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators. △ Less

Submitted 23 March, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Lett. 120, 167701 (2018)

Measuring electron spin flip-flops through nuclear spin echo decays

Authors: Evan S. Petersen, Alexei M. Tyryshkin, Kohei M. Itoh, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how… ▽ More We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how electron flip-flop rates change with donor density. We also simulate how electron spin flip-flops can cause nuclear spin decoherence. We find that when these flip-flops are the primary cause of decoherence, Hahn echo decays have a stretched exponential form. For our two higher donor density crystals ($> 10^{15}~\text{P/cm}^3$), there is excellent agreement between simulations and experiments. In lower density crystals ($< 10^{15}~\text{P/cm}^3$), there is no longer agreement between simulations and experiments, suggesting a different, unknown mechanism is limiting nuclear spin coherence. The nuclear spin coherence in the lowest density crystal ($1.2 \times 10^{14}~\text{P/cm}^3$) allows us to place upper bounds on the magnitude of noise sources in bulk crystals such as electric field fluctuations that may degrade silicon quantum devices. △ Less

Submitted 12 September, 2017; v1 submitted 8 September, 2017; originally announced September 2017.

Comments: 13 pages, 4 figures

Coherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity

Authors: B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon

Abstract: We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the sp… ▽ More We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the spin ensemble-cavity polariton resonances of 2$g\sqrt{N}$ = 580 kHz (where each spin is coupled with strength $g$) in a cavity with a quality factor of 75,000 ($γ\ll κ\approx$ 60 kHz where $γ$ and $κ$ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T$_2^*$ = 9 $μ$s) providing a wide window for viewing the dynamics of the coupled spin ensemble-cavity system. The free induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate $g\sqrt{N}$. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z-projection of the psuedospin using optical excitation and microwave manipulation respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt $π$ phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. X 7, 031002 (2017)

Electron nuclear double resonance with donor-bound excitons in silicon

Authors: David P. Franke, Michael Szech, Florian M. Hrubesch, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Kohei M. Itoh, Michael L. W. Thewalt, Martin S. Brandt

Abstract: We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband… ▽ More We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system. △ Less

Submitted 29 November, 2016; v1 submitted 9 August, 2016; originally announced August 2016.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 94, 235201 (2016)

A photonic platform for donor spin qubits in silicon

Authors: Kevin J. Morse, Rohan J. S. Abraham, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L. W. Thewalt, Stephanie Simmons

Abstract: Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fideli… ▽ More Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fidelities near $\sim\!99.9\%$. These properties meet the requirements for many modern quantum error correction protocols, which are essential for constructing large-scale universal quantum technologies. However, a method of reliably coupling spatially-separated qubits, which crucially does not sacrifice qubit quality and is robust to manufacturing imperfections, has yet to be identified. Here we present such a platform for donor qubits in silicon, by exploiting optically-accessible `deep' chalcogen donors. We show that these donors emit highly uniform light, can be optically initialized, and offer long-lived spin qubit ground states without requiring milliKelvin temperatures. These combined properties make chalcogen donors uniquely suitable for incorporation into silicon photonic architectures for single-shot single-qubit readout as well as for multi-qubit coupling. This unlocks clear pathways for silicon-based quantum computing, spin to photon conversion, photonic memories, silicon-integrated triggered single photon sources and all-optical silicon switches. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Comments: 7 pages, 4 figures

Nuclear spin decoherence of neutral $^{31}$P donors in silicon: Effect of environmental $^{29}$Si nuclei

Authors: Evan S. Petersen, Alexei M. Tyryshkin, John J. L. Morton, Eisuke Abe, Shinichi Tojo, Kohei M. Itoh, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resona… ▽ More Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The $^{31}$P nuclear spin echo decays show that decoherence is controlled by $^{29}$Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% $^{29}$Si to 3 s in crystals containing 1% $^{29}$Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing $^{29}$Si flip-flops within a `frozen core', as a result of the detuning of the $^{29}$Si spins caused by their hyperfine coupling to the electron spin. △ Less

Submitted 21 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 161202 (2016)

Reaching the quantum limit of sensitivity in electron spin resonance

Authors: A. Bienfait, J. J. Pla, Y. Kubo, M. Stern, X. Zhou, C. C. Lo, C. D. Weis, T. Schenkel, M. L. W. Thewalt, D. Vion, D. Esteve, B. Julsgaard, K. Moelmer, J. J. L. Morton, P. Bertet

Abstract: We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitud… ▽ More We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance. △ Less

Submitted 24 July, 2015; originally announced July 2015.

Comments: Main text : 10 pages, 4 figures. Supplementary text : 16 pages, 8 figures

$^{29}$Si nuclear spins as a resource for donor spin qubits in silicon

Authors: Gary Wolfowicz, Pierre-Andre Mortemousque, Roland Guichard, Stephanie Simmons, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton

Abstract: Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin… ▽ More Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby $^{29}$Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale - over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction, including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round quantum error correction using donors in silicon. △ Less

Submitted 8 May, 2015; originally announced May 2015.

Comments: 6 pages, 4 figures

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Authors: Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie… ▽ More Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. △ Less

Submitted 1 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

Authors: C. C. Lo, M. Urdampilleta, P. Ross, M. F. Gonzalez-Zalba, J. Mansir, S. A. Lyon, M. L. W. Thewalt, J. J. L. Morton

Abstract: Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as pa… ▽ More Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For electron spins bound to shallow donors in silicon, bulk electrically-detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons which fundamentally limits spin coherence times. Here we demonstrate electrical detection of phosphorus donor electron spin resonance by transport through a silicon device, using optically-driven donor-bound exciton transitions. We use this method to measure electron spin Rabi oscillations, and, by avoiding use of an ancillary spin for readout, we are able to obtain long intrinsic electron spin coherence times, limited only by the donor concentration. We go on to experimentally address critical issues for adopting this scheme for single spin measurement in silicon nanodevices, including the effects of strain, electric fields, and non-resonant excitation. This lays the foundations for realising a versatile readout method for single spin readout with relaxed magnetic field and temperature requirements compared with spin-dependent tunneling. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 13 pages, 4 figures

Hyperfine Stark effect of shallow donors in silicon

Authors: G. Pica, G. Wolfowicz, M. Urdampilleta, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. J. L. Morton, R. N. Bhatt, S. A. Lyon, B. W. Lovett

Abstract: We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. V… ▽ More We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 90 195204 (2014)

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

Authors: T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, K. M. Itoh

Abstract: The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical lik… ▽ More The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 90, 121203 (2014)

Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal

Authors: P. Gumann, O. Patange, C. Ramanathan, H. Haas, O. Moussa, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, K. M. Itoh, D. G. Cory

Abstract: We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free ind… ▽ More We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1 cm$^3$ sample ($\approx 10^{15}$ spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of 64 %. The $^{31}$P-T$_{2}$ measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T$_1$ of the $^{31}$P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a timescale of 4.5 hours. Optical excitation was performed with a 1047 nm laser, which provided above bandgap excitation of the silicon. The build-up of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the build-up at 1.7 K showed bi-exponential behavior with characteristic time constants of 578 s and 5670 s. △ Less

Submitted 12 December, 2014; v1 submitted 20 July, 2014; originally announced July 2014.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 113, 267604 (2014)

Conditional control of donor nuclear spins in silicon using Stark shifts

Authors: Gary Wolfowicz, Matias Urdampilleta, Mike L. W. Thewalt, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton

Abstract: Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors… ▽ More Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Comments: 5 pages, 4 figures, 1 supplementary information

Fast, low-power manipulation of spin ensembles in superconducting microresonators

Authors: Anthony J. Sigillito, Hans Malissa, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton, Andrew A. Houck, David I. Schuster, S. A. Lyon

Abstract: We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pul… ▽ More We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field ($B_{1}$) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to $10^{7}$ spins or $3 \times 10^{4}$ spins/$\sqrt{Hz}$ with averaging. △ Less

Submitted 1 May, 2014; v1 submitted 28 February, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures

Atomic clock transitions in silicon-based spin qubits

Authors: Gary Wolfowicz, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon, John J. L. Morton

Abstract: A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of f… ▽ More A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of frequency standards and atomic clocks, is the use of particular spin transitions which are inherently robust to external perturbations. Here we show that such `clock transitions' (CTs) can be observed for electron spins in the solid state, in particular using bismuth donors in silicon. This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on CTs become less sensitive to the local magnetic environment, including the presence of 29Si nuclear spins as found in natural silicon. We expect the use of such CTs will be of additional importance for donor spins in future devices, mitigating the effects of magnetic or electric field noise arising from nearby interfaces. △ Less

Submitted 28 January, 2013; originally announced January 2013.

Comments: 11 pages, 6 figures

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si

Authors: Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin cohere… ▽ More Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of 29Si impurities. Here we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths, transition probabilities and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and mI of the 209Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X-band, comparable with 28Si:P. The coherence times we measure follow closely the calculated field-sensitivity of the transition frequency, providing a strong motivation to explore 'clock' transitions where coherence lifetimes could be further enhanced. △ Less

Submitted 13 September, 2012; v1 submitted 16 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 figures

Electron spin coherence exceeding seconds in high purity silicon

Authors: Alexei M. Tyryshkin, Shinichi Tojo, John J. L. Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Thomas Schenkel, Michael L. W. Thewalt, Kohei M. Itoh, S. A. Lyon

Abstract: Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other mater… ▽ More Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure $^{28}$Si material, with a residual $^{29}$Si concentration of less than 50 ppm and donor densities of $10^{14-15}$ per cm$^3$. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime $T_2$ up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin $T_2$ of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits. △ Less

Submitted 18 May, 2011; originally announced May 2011.

Comments: 18 pages, 4 figures, supplementary information

Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si

Authors: M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl

Abstract: The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor b… ▽ More The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor bound exciton transitions. We have also shown that pum** these same transitions can very quickly produce large electron and nuclear hyperpolarizations at low magnetic fields, where the equilibrium electron and nuclear polarizations are very small. Here we show preliminary results of the measurement of 31P neutral donor NMR parameters using this optical nuclear hyperpolarization mechanism for preparation of the 31P nuclear spin system, followed by optical readout of the resulting nuclear spin population after manipulation with NMR pulse sequences. This allows for the observation of single-shot NMR signals with very high signal to noise ratio under conditions where conventional NMR is not possible, due to the low concentration of 31P and the small equilibrium polarization. △ Less

Submitted 1 June, 2011; v1 submitted 29 September, 2010; originally announced September 2010.

Comments: Invited Presentation at ICPS-30 (2010), Seoul, Korea

Journal ref: J. Appl. Phys. 109, 102411 (2011)

Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

Authors: D. Sleiter, N. Y. Kim, K. Nozawa, T. D. Ladd, M. L. W. Thewalt, Y. Yamamoto

Abstract: We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spi… ▽ More We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system. △ Less

Submitted 12 May, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 17 pages, 6 figures

Journal ref: New J. Phys. 12 093028 (2010)

Isotope effect on electron paramagnetic resonance of boron acceptors in silicon

Authors: A. R. Stegner, H. Tezuka, T. Andlauer, M. Stutzmann, M. L. W. Thewalt, M. S. Brandt, K. M. Itoh

Abstract: The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR) lines, e.g. by a random distribution of local strains. However, since EPR of boron acceptors in externally unstrained silicon was reported for the first time, neit… ▽ More The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR) lines, e.g. by a random distribution of local strains. However, since EPR of boron acceptors in externally unstrained silicon was reported for the first time, neither the line shape nor the magnitude of the residual broadening observed in samples with high crystalline purity were compatible with the low concentrations of carbon and oxygen point defects, being the predominant source of random local strain. Adapting a theoretical model which has been applied to understand the acceptor ground state splitting in the absence of a magnetic field as an effect due to the presence of different silicon isotopes, we show that local fluctuations of the valence band edge due to different isotopic configurations in the vicinity of the boron acceptors can quantitatively account for all inhomogeneous broadening effects in high purity Si with a natural isotope composition. Our calculations show that such an isotopic perturbation also leads to a shift in the g-value of different boron-related resonances, which we could verify in our experiments. Further, our results provide an independent test and verification of the valence band offsets between the different Si isotopes determined in previous works. △ Less

Submitted 6 April, 2010; originally announced April 2010.

Comments: 26 pages (preprint), 9 figures

Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

Authors: Richard E. George, Wayne Witzel, H. Riemann, N. V. Abrosimov, N. Notzel, Mike L. W. Thewalt, John J. L. Morton

Abstract: Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2) and strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales… ▽ More Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2) and strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales allow a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin coherence time (T2e) of P-donors in natural silicon. We report the electron nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies. △ Less

Submitted 1 September, 2010; v1 submitted 2 April, 2010; originally announced April 2010.

Comments: 4 pages, 4 figures, plus supporting information 2 pages, 3 figures

Journal ref: Phys. Rev. Lett. 105, 067601 (2010)

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

Authors: H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L. W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

Abstract: The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous d… ▽ More The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results. △ Less

Submitted 23 March, 2010; originally announced March 2010.

Comments: 4 pages, 3 figures