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Transient vortex dynamics and evolution of Bose metal from a 2D superconductor on MoS$_2$
Authors:
Sreevidya Narayanan,
Anoop Kamalasanan,
Annu Anns Sunny,
Madhu Thalakulam
Abstract:
The true character of physical phenomena is thought to be reinforced as the system becomes disorder-free. In contrast, the two-dimensional (2D) superconductor is predicted to turn fragile and resistive away from the limit I -> 0, B -> 0, in the pinning-free regime. It is intriguing to note that the very vortices responsible for achieving superconductivity by pairing, condensation, and, thereby red…
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The true character of physical phenomena is thought to be reinforced as the system becomes disorder-free. In contrast, the two-dimensional (2D) superconductor is predicted to turn fragile and resistive away from the limit I -> 0, B -> 0, in the pinning-free regime. It is intriguing to note that the very vortices responsible for achieving superconductivity by pairing, condensation, and, thereby reducing the classical dissipation, render the state resistive driven by quantum fluctuations in the T -> 0. While cleaner systems are being explored for technological improvements, the 2D superconductor turning resistive when influenced by weak electric and magnetic fields has profound consequences for quantum technologies. A metallic ground state in 2D is beyond the consensus of both Bosonic and Fermionic systems, and its origin and nature warrant a comprehensive theoretical understanding supplemented by in-depth experiments. A real-time observation of the influence of vortex dynamics on transport properties so far has been elusive. We explore the nature and fate of a low-viscous, clean, 2D superconducting state formed on an ionic-liquid gated few-layered MoS$_2$ sample. The vortex-core being dissipative, the elastic depinning, intervortex interaction, and the subsequent dynamics of the vortex-lattice cause the system to behave like an overdamped harmonic oscillator, leaving transient signatures in the transport characteristics. The temperature and magnetic field dependence of the transient nature and the noise characteristics of the magnetoresistance confirm that quantum fluctuations are solely responsible for the Bose metal state and the fragility of the superconducting state.
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Submitted 26 November, 2023;
originally announced November 2023.
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GHz operation of a quantum point contact using stub impedance matching circuit
Authors:
Anusha Shanmugam,
Prasanta Kumbhakar,
Harikrishnan Sundaresan,
Annu Anns Sunny,
J L Reno,
Madhu Thalakulam
Abstract:
Quantum point contacts (QPC) are the building blocks of quantum dot qubits and semiconducting quantum electrical metrology circuits. QPCs also make highly sensitive electrical amplifiers with the potential to operate in the quantum-limited regime. Though the inherent operational bandwidth of QPCs can eclipse the THz regime, the impedance mismatch with the external circuitry limits the operation to…
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Quantum point contacts (QPC) are the building blocks of quantum dot qubits and semiconducting quantum electrical metrology circuits. QPCs also make highly sensitive electrical amplifiers with the potential to operate in the quantum-limited regime. Though the inherent operational bandwidth of QPCs can eclipse the THz regime, the impedance mismatch with the external circuitry limits the operation to a few kHz regimes. Lumped-element impedance-matching circuits are successful only up to a few hundreds of MHz. QPCs are characterised by a complex impedance consisting of quantized resistance, capacitance, and inductance elements. Characterising the complex admittance at higher frequencies and understanding the coupling of QPC to other circuit elements and electromagnetic environments will provide valuable insight into its sensing and backaction properties. In this work, we couple a QPC galvanically to a superconducting stub tuner impedance matching circuit realised in a coplanar waveguide architecture to enhance the operation frequency into the GHz regime and investigate the electrical amplification and complex admittance characteristics. The device, operating at 1.96 GHz exhibits a conductance sensitivity of 29.2 micro-e/SQRT(Hz) and a bandwidth of 13MHz. Besides, the RF reflected power unambiguously reveals the complex admittance characteristics of the QPC, shining more light on the behaviour of quantum tunnel junctions at higher operational frequencies.
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Submitted 22 November, 2023;
originally announced November 2023.
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Strain-engineering the Schottky barrier and electrical transport on MoS2
Authors:
Ashby Phillip John,
Arya Thenapparambil,
Madhu Thalakulam
Abstract:
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. In this work we explore the effect of uniaxial tensile-strain on the electrical…
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Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. In this work we explore the effect of uniaxial tensile-strain on the electrical transport properties of bi- and few-layered MoS2, a promising 2D semiconductor. Raman shifts corresponding to the in-plane vibrational modes show a redshift with strain indicating a softening of the in-plane phonon modes. Photo luminescence measurements reveal a redshift in the direct and the indirect emission peaks signalling a reduction in the material bandgap. Transport measurements show a substantial enhancement in the electrical conductivity with a high piezoresistive gauge factor of ~ 321 superior to that for Silicon for our bi-layered device. The simulations conducted over the experimental findings reveal a substantial reduction of the Schottky barrier height at the electrical contacts in addition to the resistance of MoS2. Our studies reveal that strain is an important and versatile ingredient to tune the electrical properties of 2D materials and also can be used to engineer high-efficiency electrical contacts for future device engineering.
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Submitted 10 April, 2020;
originally announced April 2020.
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2D superconductivity and vortex dynamics in 1T-MoS2
Authors:
Chithra H. Sharma,
Ananthu P. Surendran,
Sangeeth S. Varma,
Madhu Thalakulam
Abstract:
Two-dimensional (2D) superconductivity is a fascinating phenomenon packed with rich physics and wide technological application. The vortices and their dynamics arising from classical and quantum fluctuations give rise to Berezinskii-Kosterlitz-Thouless (BKT) transition and 2D Bose metallic phase both of which are of fundamental interest. In 2D, observation of superconductivity and the associated p…
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Two-dimensional (2D) superconductivity is a fascinating phenomenon packed with rich physics and wide technological application. The vortices and their dynamics arising from classical and quantum fluctuations give rise to Berezinskii-Kosterlitz-Thouless (BKT) transition and 2D Bose metallic phase both of which are of fundamental interest. In 2D, observation of superconductivity and the associated phenomena are sensitive to material disorders. Highly crystalline and inherently 2D van der Waals (vW) systems with carrier concentration and conductivity approaching metallic regime have been a potential platform. The metallic 1T phase of MoS2, a widely explored vW material system controllably, engineered from the semiconducting 2H phase, is a tangible choice. Here, we report the observation of 2D superconductivity accompanied by BKT transition and Bose metallic state in a few-layer 1T-MoS2. Structural characterization shows excellent crystallinity over extended lateral dimension. The electrical characterization confirms the metallic nature down to 4 K and a transition to a superconducting state below 1.2 K with a Tc ~ 920 mK. The 2D nature of the superconducting state is confirmed from the magneto-transport anisotropy against field orientations and the presence of BKT transition. In addition, our sample showcases a manifold increase in the parallel upper-critical-field above the Pauli limit. The inherent two-dimensionality and possibility of scalably engineering semiconducting, metallic and superconducting phases makes MoS2 a potential candidate for hosting monolithic all-two-dimensional hybrid quantum devices.
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Submitted 19 May, 2018;
originally announced May 2018.
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Stable and scalable metallic phase on MoS2 using forming-gas microwave plasma
Authors:
Chithra H. Sharma,
Ananthu P. Surendran,
Abin Varghese,
Madhu Thalakulam*
Abstract:
Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these phases has been reported, a method for engineering a stable 1T phase in a scalable manner, compatible with the standard device fabrication schemes is yet to emerge. In addition, there are no comprehensive studies on the el…
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Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these phases has been reported, a method for engineering a stable 1T phase in a scalable manner, compatible with the standard device fabrication schemes is yet to emerge. In addition, there are no comprehensive studies on the electrical properties of the 1T phase. In this manuscript, we demonstrate a controllable and scalable 2H to 1T phase engineering technique for MoS2 using Ar + H2 microwave plasma. The technique enables us to realize 1T MoS2 starting from the 2H phase of arbitrary thickness and area. Our method allows lithographically defining continuous 1T regions in a 2H sample. The 1T samples withstand aging in excess of a few weeks in ambience and show a thermal stability up to 300 C, making it suitable for standard device fabrication techniques. We conduct both two-probe and four-probe electrical transport measurements on devices with back-gated field effect transistor geometry in a temperature range of 4 K to 300 K. The 1T samples exhibit Ohmic current-voltage characteristics in all temperature ranges without any dependence to the gate voltage, a signature indicative of metallic state. The sheet resistance of our 1T MoS2 sample is considerably lower than that of 2H samples while the carrier concentration of the 1T sample is few orders of magnitude higher than that of the 2H samples. In addition, our samples show negligible temperature dependence of resistance from 4 K to 300 K ruling out any ho** mediated or activated electrical transport.
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Submitted 22 January, 2018;
originally announced January 2018.
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Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials
Authors:
Abin Varghese,
Chithra H. Sharma and,
Madhu Thalakulam
Abstract:
A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology is of paramout importance in realizing all-two-dimensional logic circuits and move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS2 and oth…
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A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology is of paramout importance in realizing all-two-dimensional logic circuits and move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS2 and other vW materials. Using this technique we etch MoS2 flakes layer-by-layer starting from arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as Graphene, h-BN and WSe2. In addition, using the microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme for device fabrication.
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Submitted 13 December, 2016;
originally announced December 2016.
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Split-gate point-contact for channelizing electron transport on MoS2/h-BN hybrid structures
Authors:
Chithra H. Sharma,
Madhu Thalakulam
Abstract:
Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructure…
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Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, a first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. Our devices show signatures of channelized electron flow and a complete shutdown of transport similar to the conventional point contacts defined on bulk semiconductor heterostructures. We explore the role of back-gate and the drain-source voltages on the pinch-off characteristics and, we are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4K to 300 K.
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Submitted 22 November, 2016;
originally announced November 2016.
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Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors
Authors:
W. Pan,
J. F. Klem,
J. K. Kim,
M. Thalakulam,
M. J. Cich
Abstract:
We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the…
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We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Quantum transport shows noisy-like behavior around the CNP at extremely high B fields. Surprisingly, when the diagonal conductivity σ_{xx} is plotted against the Hall conductivity σ_{xy}, a circular conductivity law is discovered, suggesting a chaotic quantum transport behavior.
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Submitted 2 April, 2012;
originally announced April 2012.
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Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot
Authors:
Madhu Thalakulam,
C. B. Simmons,
B. J. Van Bael,
B. M. Rosemeyer,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupa…
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We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.
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Submitted 13 July, 2011; v1 submitted 5 October, 2010;
originally announced October 2010.
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Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
Authors:
C. B. Simmons,
Teck Seng Koh,
Nakul Shaji,
Madhu Thalakulam,
L. J. Klein,
Hua Qin,
H. Luo,
D. E. Savage,
M. G. Lagally,
A. J. Rimberg,
Robert Joynt,
Robert Blick,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when…
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We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.
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Submitted 5 April, 2011; v1 submitted 31 August, 2010;
originally announced August 2010.
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Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
Authors:
Madhu Thalakulam,
C. B. Simmons,
B. M. Rosemeyer,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measuremen…
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We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach.
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Submitted 3 March, 2010;
originally announced March 2010.
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Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot
Authors:
C. B. Simmons,
Madhu Thalakulam,
B. M. Rosemeyer,
B. J. Van Bael,
E. K. Sackmann,
D. E. Savage,
M. G. Lagally,
R. Joynt,
M. Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes t…
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We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.
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Submitted 11 May, 2009;
originally announced May 2009.
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Single-electron quantum dot in Si/SiGe with integrated charge-sensing
Authors:
C. B. Simmons,
Madhu Thalakulam,
Nakul Shaji,
Levente J. Klein,
Hua Qin,
R. H. Blick,
D. E. Savage,
M. G. Lagally,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single…
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Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.
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Submitted 1 November, 2007; v1 submitted 19 October, 2007;
originally announced October 2007.
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Shot-Noise-Limited Operation of a Fast Quantum-Point-Contact Charge Sensor
Authors:
Madhu Thalakulam,
W. W. Xue,
Feng Pan,
Z. Ji,
J. Stettenheim,
Loren Pfeiffer,
K. W. West,
A. J. Rimberg
Abstract:
We have operated a quantum point contact (QPC) charge detector in a radio frequency (RF) mode that allows fast charge detection in a bandwidth of tens of megahertz. We find that the charge sensitivity of the RF-QPC is limited not by the noise of a secondary amplifier, but by non-equilibrium noise f the QPC itself. We have performed frequency-resolved measurements of the noise within a 10 MHz ban…
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We have operated a quantum point contact (QPC) charge detector in a radio frequency (RF) mode that allows fast charge detection in a bandwidth of tens of megahertz. We find that the charge sensitivity of the RF-QPC is limited not by the noise of a secondary amplifier, but by non-equilibrium noise f the QPC itself. We have performed frequency-resolved measurements of the noise within a 10 MHz bandwidth around our carrier wave. When averaged over our bandwidth, we find that the noise is in good agreement with the theory of photon-assisted shot noise. Our measurements also reveal strong frequency dependence of the noise, asymmetry with respect to the carrier wave, the appearance of sharp local maxima that are correlated with mechanical degrees of freedom in the sample, and noise suppression indicative of many-body physics near the 0.7 structure.
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Submitted 6 August, 2007;
originally announced August 2007.
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Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Authors:
Nakul Shaji,
C. B. Simmons,
Madhu Thalakulam,
Levente J. Klein,
Hua Qin,
H. Luo,
D. E. Savage,
M. G. Lagally,
A. J. Rimberg,
R. Joynt,
M. Friesen,
R. H. Blick,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in…
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Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics.
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Submitted 11 December, 2008; v1 submitted 6 August, 2007;
originally announced August 2007.
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Sensitivity and Linearity of Superconducting Radio-Frequency Single-Electron Transistors: Effects of Quantum Charge Fluctuations
Authors:
Madhu Thalakulam,
Z. Ji,
A. J. Rimberg
Abstract:
We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (RF-SETs) for large values of the quasiparticle cotunneling parameter $α=8E_{J}/E_{c}$, where $E_{J}$ and $E_{c}$ are the Josephson and charging energies. We find that for $α>1$, subgap RF-SET operation is still feasible despite quantum fluctu…
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We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (RF-SETs) for large values of the quasiparticle cotunneling parameter $α=8E_{J}/E_{c}$, where $E_{J}$ and $E_{c}$ are the Josephson and charging energies. We find that for $α>1$, subgap RF-SET operation is still feasible despite quantum fluctuations that renormalize the SET charging energy and wash out quasiparticle tunneling thresholds. Surprisingly, such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.
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Submitted 15 October, 2003;
originally announced October 2003.
