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Realization of A Non-Markov Chain in A Single 2D Crystal RRAM
Authors:
Rongjie Zhang,
Wenjun Chen,
Changjiu Teng,
Wugang Liao,
Bilu Liu,
Hui-Ming Cheng
Abstract:
The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achi…
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The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achieve the non-Markov chain in an individual RRAM device based on 2D mica with a vertical metal/mica/metal structure. We find that the internal potassium ions (K+) in 2D mica gradually move along the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is tuned by electrical field, and the 2D-mica RRAM possesses both unipolar and bipolar memory windows, high on/off ratio, decent stability and repeatability.Importantly, the non-Markov chain algorithm is established for the first time in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers the inner ionic conductivity of 2D mica, but also opens the door for such novel RRAM devices with numerous functions and applications.
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Submitted 30 August, 2021;
originally announced August 2021.
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Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations
Authors:
Christina Jones,
Chu-Hsiang Teng,
Qimin Yan,
Pei-Cheng Ku,
Emmanouil Kioupakis
Abstract:
We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is ov…
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We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Hence, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Furthermore, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN LEDs.
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Submitted 13 September, 2017; v1 submitted 20 February, 2017;
originally announced February 2017.
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Site-controlled InGaN/GaN single-photon-emitting diode
Authors:
Lei Zhang,
Chu-Hsiang Teng,
Pei-Cheng Ku,
Hui Deng
Abstract:
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.
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Submitted 6 February, 2016;
originally announced February 2016.
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Charge-Tunable Indium Gallium Nitride Quantum Dots
Authors:
Lei Zhang,
Chu-Hsiang Teng,
Pei-Cheng Ku,
Hui Deng
Abstract:
III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with non-cryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin based quantum optical and quantum information research, we demonstrate here quantized char…
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III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with non-cryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-Nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-Nitride QDs, opening a door to III-Nitride based spintronics and spin-qubit quantum information processing.
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Submitted 6 February, 2016;
originally announced February 2016.
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How much better are InGaN/GaN nanodisks than quantum wells - oscillator strength enhancement and changes in optical properties
Authors:
Lei Zhang,
Leung-Kway Lee,
Chu-Hsiang Teng,
Tyler A. Hill,
Pei-Cheng Ku,
Hui Deng
Abstract:
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong…
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We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement results from significant strain relaxation in nanodisks less than 100 nm in diameter. Meanwhile, the radiative decay rate is only improved by 10 folds due to strong reduction of the local density of photon states in small nanodisks. Further increase in the radiative decay rate can be achieved by engineering the local density of photon states, such as adding a dielectric coating.
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Submitted 22 January, 2014; v1 submitted 24 September, 2013;
originally announced September 2013.
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Carrier dynamics in site- and structure-controlled InGaN/GaN quantum dots
Authors:
Lei Zhang,
Tyler A. Hill,
Chu-Hsiang Teng,
Brandon Demory,
Pei-Cheng Ku,
Hui Deng
Abstract:
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and time-resolved spectra and the second-order correlation function of the photoluminescence from quantum dots with diameters ranging from 19 nm to 33 nm at temperatures of 10…
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We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and time-resolved spectra and the second-order correlation function of the photoluminescence from quantum dots with diameters ranging from 19 nm to 33 nm at temperatures of 10 K to 120 K. The influence of the small fluctuations in structural parameters, most importantly the quantum dot thickness, on the optical properties are also investigated through statistical correlations among multiple optical properties of many individual quantum dots. We found that in a single dot the strain-induced polarization field and the strain relaxation at the sidewall form a potential barrier to protect the exciton from reaching the sidewall surface. However, the exciton can overcome this potential barrier and recombine nonradiatively at the surface through two mechanisms: tunnelling through the barrier quantum mechanically and hop** over the barrier by attaining sufficient thermal energy. The former (latter) mechanism is temperature insensitive (sensitive) and dominates nonradiaitve exciton decay at low (high) temperatures. We also found that despite the good uniformities in structural parameters, all optical properties still exhibit inhomogeneities from dot to dot. However, all these inhomogeneities can be modeled by simply varying the potential barrier height, which also explains the observed correlation curves among all optical properties. Finally, we found that the biexciton-to-exciton quantum efficiency ratio, which determines the probability of multi-photon emission, can be tuned by adjusting the potential barrier height and the temperature, suggesting a new way to achieve single photon emission at high temperatures.
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Submitted 5 May, 2014; v1 submitted 16 September, 2013;
originally announced September 2013.
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Single Photon Emission from Site-Controlled InGaN/GaN Quantum Dots
Authors:
Lei Zhang,
Chu-Hsiang Teng,
Tyler A. Hill,
Leung-Kway Lee,
Pei-Cheng Ku,
Hui Deng
Abstract:
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. T…
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Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.
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Submitted 8 November, 2013; v1 submitted 27 August, 2013;
originally announced August 2013.
