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Resonantly pumped bright-triplet exciton lasing in caesium lead bromide perovskites
Authors:
Guanhua Ying,
Tristan Farrow,
Atanu Jana,
Hanbo Shao,
Hyunsik Im,
Vitaly Osokin,
Seung Bin Baek,
Mutibah Alanazi,
Sanjit Karmakar,
Manas Mukherjee,
Youngsin Park,
Robert A. Taylor
Abstract:
The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive for future optoelectronic applications, especially in bright low-threshold nano-lasers. Whilst non-resonantly pumped lasing from all-inorganic lead-ha…
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The surprising recent observation of highly emissive triplet-states in lead halide perovskites accounts for their orders-of-magnitude brighter optical signals and high quantum efficiencies compared to other semiconductors. This makes them attractive for future optoelectronic applications, especially in bright low-threshold nano-lasers. Whilst non-resonantly pumped lasing from all-inorganic lead-halide perovskites is now well-established as an attractive pathway to scalable low-power laser sources for nano-optoelectronics, here we showcase a resonant optical pum** scheme on a fast triplet-state in CsPbBr3 nanocrystals. The scheme allows us to realize a polarized triplet-laser source that dramatically enhances the coherent signal by one order of magnitude whilst suppressing non-coherent contributions. The result is a source with highly attractive technological characteristics including a bright and polarized signal, and a high stimulated-to-spontaneous emission signal contrast that can be filtered to enhance spectral purity. The emission is generated by pum** selectively on a weakly-confined excitonic state with a Bohr radius ~10 nm in the nanocrystals. The exciton fine-structure is revealed by the energy-splitting resulting from confinement in nanocrystals with tetragonal symmetry. We use a linear polarizer to resolve two-fold non-degenerate sub-levels in the triplet exciton and use photoluminescence excitation spectroscopy to determine the energy of the state before pum** it resonantly.
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Submitted 14 July, 2021;
originally announced July 2021.
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Angle-resolved Reflectivity and Transmissivity of a TE-polarized Wave Incident On a Microcavity Containing Strongly Coupled In-plane Oriented 1D Excitons
Authors:
F. Le Roux,
R. A. Taylor,
D. D. C. Bradley
Abstract:
Here we report on the reflectivity and transmissivity of a TE-polarized wave incident on a microcavity containing strongly coupled, in-plane oriented one dimensional (1D) excitons. We first discuss the propagation of the electric field through the cavity and present a simple model which allows us to understand the underlying physics. We then compare this model to previous reports and perform our o…
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Here we report on the reflectivity and transmissivity of a TE-polarized wave incident on a microcavity containing strongly coupled, in-plane oriented one dimensional (1D) excitons. We first discuss the propagation of the electric field through the cavity and present a simple model which allows us to understand the underlying physics. We then compare this model to previous reports and perform our own measurements on a microcavity containing an oriented layer of liquid-crystalline poly(9,9-dioctyfluorene) (PFO). We show that in all cases, the reflected and transmitted electric fields are the superpositions of photons leaking parallel and perpendicular to the excitons' orientation.
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Submitted 28 November, 2019;
originally announced November 2019.
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Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Authors:
Tong Wang,
Tongtong Zhu,
Tim J. Puchtler,
Claudius C. Kocher,
Helen P. Springbett,
John C. Jarman,
Luke P. Nuttall,
Rachel A. Oliver,
Robert A. Taylor
Abstract:
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in t…
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Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in the proximity of the QDs. Optical characterization has confirmed the ability of such QDs to emit polarized single photons and we have recorded a ~ 45% shorter average radiative lifetime and 65% reduction in the slow-timescale spectral diffusion compared to previous QDs. This growth method is an important development of the non-polar a-plane InGaN platform, opening up more possibilities in single-photon, lasing, and fundamental investigations.
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Submitted 19 September, 2019;
originally announced September 2019.
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Exciton-Polaritons in Uniaxially Aligned Organic Microcavities
Authors:
F. Le Roux,
R. A. Taylor,
D. D. C. Bradley
Abstract:
Here we report the fabrication and optical characterization of organic microcavities containing liquid-crystalline conjugated polymers (LCCPs): poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), poly(9,9-dioctylfluorene) (PFO) and poly(2,7-(9,9-dihexylfluorene)-co-bithiophene) (F6T2) aligned on top of a thin transparent Sulfuric Dye 1 (SD1) photoalignment layer. We extract the optical constants…
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Here we report the fabrication and optical characterization of organic microcavities containing liquid-crystalline conjugated polymers (LCCPs): poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), poly(9,9-dioctylfluorene) (PFO) and poly(2,7-(9,9-dihexylfluorene)-co-bithiophene) (F6T2) aligned on top of a thin transparent Sulfuric Dye 1 (SD1) photoalignment layer. We extract the optical constants of the aligned films using variable angle spectroscopic ellipsometry and fabricate metallic microcavities in which the ultrastrong coupling regime is manifest both for the aligned and non-aligned LCCPs. Transition dipole moment alignment enables a systematic increase in the interaction strength, with unprecedented solid-state Rabi splitting energies up to 1.80 eV for F6T2, the first to reach the visible spectrum; with an optical gap of 2.79 eV this also gives the highest-to-date organic microcavity coupling ratio, 65$\%$. We also demonstrate that the coupling strength is polarization-dependent with bright polaritons photoluminescence for TE polarization parallel to the transition dipoles and either no emission or weakly coupled emission from the corresponding TM polarization. The use of uniaxally aligned organic microcavities with switchable coupling strength offers exciting prospects for direct observations of ultrastrong coupling signatures, quantum simulation, polaritonics and condensation related phenomena.
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Submitted 27 September, 2019; v1 submitted 13 September, 2019;
originally announced September 2019.
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Two-dimensional Excitonic Photoluminescence in Graphene on Cu surface
Authors:
Youngsin Park,
Yoo S. Kim,
Chang Woo Myung,
Robert A. Taylor,
Christopher C. S. Chan,
Benjamin P. L. Reid,
Timothy J. Puchtler,
Robin J. Nicholas,
Tomba S. Laishram,
Geunsik Lee,
Chan C. Hwang,
Chong Yun Park,
Kwang S. Kim
Abstract:
Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature i…
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Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene $π$ and Cu d orbitals of the 1st and 2nd Cu layers at a shifted saddle point 0.525(M+K) of Brillouin zone. This finding provides a new pathway to engineering novel optoelectronic graphene devices, whilst maintaining the outstanding electrical properties of graphene.
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Submitted 27 October, 2016;
originally announced October 2016.
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An ultrafast polarised single photon source at 220 K
Authors:
Tong Wang,
Tim J. Puchtler,
Tongtong Zhu,
John C. Jarman,
Luke P. Nuttall,
Rachel A. Oliver,
Robert A. Taylor
Abstract:
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with determinist…
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A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with deterministic polarisation properties at the same high temperature conditions. Here, we report the first device to simultaneously achieve single photon emission with a g(2)(0) of only 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K. The temperature insensitivity of these properties, together with the simple planar growth method, and absence of complex device geometries, makes this system an excellent candidate for on-chip applications in integrated systems.
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Submitted 1 October, 2016;
originally announced October 2016.
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Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
Authors:
Tim J. Puchtler,
Tong Wang,
Christopher X. Ren,
Fengzai Tang,
Rachel A. Oliver,
Robert A. Taylor,
Tongtong Zhu
Abstract:
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured aut…
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We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
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Submitted 27 September, 2016; v1 submitted 23 September, 2016;
originally announced September 2016.
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Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots
Authors:
Tong Wang,
Tim J. Puchtler,
Saroj Kanta Patra,
Tongtong Zhu,
Muhammad Ali,
Tom Badcock,
Tao Ding,
Rachel A. Oliver,
Stefan Schulz,
Robert A. Taylor
Abstract:
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical ins…
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We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that a-plane InGaN QDs are highly insensitive to size differences, shape anisotropies, and indium content fluctuations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. When coupled with their ability to emit single-photons, a-plane QDs are good candidates for the generation of linearly polarized single-photons, a feature attractive for quantum cryptography protocols.
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Submitted 19 November, 2016; v1 submitted 22 September, 2016;
originally announced September 2016.
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Fabrication of Ultrathin Single-Crystal Diamond Membranes
Authors:
B. A. Fairchild,
P. Olivero,
S. Rubanov,
A. D. Greentree,
F. Waldermann,
R. A. Taylor,
I. Walmsley,
J. M. Smith,
S. Huntington,
B. C. Gibson,
D. N. Jamieson,
S. Prawer
Abstract:
We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from sin…
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We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.
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Submitted 31 August, 2016;
originally announced August 2016.
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Strong exciton-photon coupling with colloidal nanoplatelets in an open microcavity
Authors:
Lucas C. Flatten,
Sotirios Christodoulou,
Robin K. Patel,
Alexander Buccheri,
David M. Coles,
Benjamin P. L. Reid,
Robert A. Taylor,
Iwan Moreels,
Jason M. Smith
Abstract:
Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuu…
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Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuum Rabi splittings of $66 \pm 1$ meV and $58 \pm 1$ meV are observed for the heavy and light hole excitons respectively, together with a polariton-mediated hybridisation of both transitions. By measuring the concentration of platelets in the film we compute the transition dipole moment of a nanoplatelet exciton to be $μ= (575 \pm 110)$ D. The large oscillator strength and fluorescence quantum yield of semiconductor nanoplatelets provide a perspective towards novel photonic devices, combining polaritonic and spinoptronic effects.
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Submitted 18 August, 2016;
originally announced August 2016.
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Electrically tunable organic-inorganic hybrid polaritons with monolayer WS2
Authors:
Lucas C. Flatten,
David M. Coles,
Zhengyu He,
David. G. Lidzey,
Robert A. Taylor,
Jamie H. Warner,
Jason M. Smith
Abstract:
Exciton-polaritons are quasiparticles consisting of a linear superposition of photonic and excitonic states, offering potential for nonlinear optical devices. The excitonic component of the polariton provides a finite Coulomb scattering cross section, such that the different types of exciton found in organic materials (Frenkel) and inorganic materials (Wannier-Mott) produce polaritons with differe…
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Exciton-polaritons are quasiparticles consisting of a linear superposition of photonic and excitonic states, offering potential for nonlinear optical devices. The excitonic component of the polariton provides a finite Coulomb scattering cross section, such that the different types of exciton found in organic materials (Frenkel) and inorganic materials (Wannier-Mott) produce polaritons with different interparticle interaction strength. A hybrid polariton state with distinct excitons provides a potential technological route towards in-situ control of nonlinear behaviour. Here we demonstrate a device in which hybrid polaritons are displayed at ambient temperatures, the excitonic component of which is part Frenkel and part Wannier-Mott, and in which the dominant exciton type can be switched with an applied voltage. The device consists of an open microcavity containing both organic dye and a monolayer of the transition metal dichalcogenide WS$_2$. Our findings offer a perspective for electrically controlled nonlinear polariton devices at room temperature.
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Submitted 17 March, 2017; v1 submitted 18 August, 2016;
originally announced August 2016.
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Room-temperature exciton-polaritons with two-dimensional WS2
Authors:
Lucas C. Flatten,
Zhengyu He,
David M. Coles,
Aurelien A. P. Trichet,
Alex W. Powell,
Robert A. Taylor,
Jamie H. Warner,
Jason M. Smith
Abstract:
Two-dimensional transition metal dichalcogenides exhibit strong optical transitions with significant potential for optoelectronic devices. In particular they are suited for cavity quantum electrodynamics in which strong coupling leads to polariton formation as a root to realisation of inversionless lasing, polariton condensationand superfluidity. Demonstrations of such strongly correlated phenomen…
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Two-dimensional transition metal dichalcogenides exhibit strong optical transitions with significant potential for optoelectronic devices. In particular they are suited for cavity quantum electrodynamics in which strong coupling leads to polariton formation as a root to realisation of inversionless lasing, polariton condensationand superfluidity. Demonstrations of such strongly correlated phenomena to date have often relied on cryogenic temperatures, high excitation densities and were frequently impaired by strong material disorder. At room-temperature, experiments approaching the strong coupling regime with transition metal dichalcogenides have been reported, but well resolved exciton-polaritons have yet to be achieved. Here we report a study of monolayer WS$_2$ coupled to an open Fabry-Perot cavity at room-temperature, in which polariton eigenstates are unambiguously displayed. In-situ tunability of the cavity length results in a maximal Rabi splitting of $\hbar Ω_{\rm{Rabi}} = 70$ meV, exceeding the exciton linewidth. Our data are well described by a transfer matrix model appropriate for the large linewidth regime. This work provides a platform towards observing strongly correlated polariton phenomena in compact photonic devices for ambient temperature applications.
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Submitted 30 August, 2016; v1 submitted 16 May, 2016;
originally announced May 2016.
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Excited exciton and biexciton localised states in a single quantum ring
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
A. Nicolet,
M. Potemski,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from…
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We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from the excited state to the ground state (? 1000 ps). As no significant excitonic Aharonov-Bohm oscillations occur up to 14 T, we conclude that phase coherence around the rim is inhibited as a consequence of height anisotropy in the quantum ring.
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Submitted 23 September, 2013;
originally announced September 2013.
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Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Authors:
Tongtong Zhu,
Fabrice Oehler,
Benjamin P. L. Reid,
Robert M. Emery,
Robert A. Taylor,
Menno J. Kappers,
Rachel A. Oliver
Abstract:
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral map** of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth o…
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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral map** of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.
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Submitted 24 May, 2013;
originally announced May 2013.
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Asymmetry of localised states in a single quantum ring: polarization dependence of excitons and biexcitons
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was ob…
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We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations the biexciton exhibits twice the energy di erence seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.
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Submitted 25 January, 2013;
originally announced January 2013.
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Strongly coupled single quantum dot in a photonic crystal waveguide cavity
Authors:
F. S. F. Brossard,
X. L. Xu,
D. A. Williams,
M. Hadjipanayi,
M. Hopkinson,
X. Wang,
R. A. Taylor
Abstract:
Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence map** of the o…
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Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence map** of the out-of-plane scattered signal along the photonic crystal waveguide. The quantum dot exciton is tuned towards the cavity mode by temperature control. A vacuum Rabi splitting of ~ 140 \mueV is observed at resonance.
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Submitted 26 March, 2010;
originally announced March 2010.
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Creating diamond color centers for quantum optical applications
Authors:
F. C. Waldermann,
P. Olivero,
J. Nunn,
K. Surmacz,
Z. Y. Wang,
D. Jaksch,
R. A. Taylor,
I. A. Walmsley,
M. Draganski,
P. Reichart,
A. D. Greentree,
D. N. Jamieson,
S. Prawer
Abstract:
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized,…
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Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.
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Submitted 29 October, 2007;
originally announced October 2007.
