Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
Authors:
Bo Chen,
Xiaoda Liu,
Yu-Hang Li,
Han Tay,
Takashi Taniguchi,
Kenji Watanabe,
Moses. H. W. Chan,
Jiaqiang Yan,
Fengqi Song,
Ran Cheng,
Cui-Zu Chang
Abstract:
Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a…
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Magnetic topological materials with coexisting magnetism and non-trivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi2Te4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi2Te4 devices using stencil masks and observe the Chern insulator state at high magnetic fields and a square hysteresis loop near zero magnetic field in all these devices. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Our theoretical calculations interpret this even-odd layer-dependent exchange bias effect as a consequence of contrasting surface and bulk magnetic properties of MnBi2Te4 devices. Our findings reveal the microscopic magnetic configuration of MnBi2Te4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi2Te4 devices.
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Submitted 3 April, 2024;
originally announced April 2024.
Environmental Do**-Induced Degradation of the Quantum Anomalous Hall Insulators
Authors:
Han Tay,
Yi-Fan Zhao,
Ling-Jie Zhou,
Ruoxi Zhang,
Zi-Jie Yan,
Deyi Zhuo,
Moses H. W. Chan,
Cui-Zu Chang
Abstract:
The quantum anomalous Hall (QAH) insulator is a topological quantum state with quantized Hall resistance and zero longitudinal resistance in the absence of an external magnetic field. The QAH insulator carries spin-polarized dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances on th…
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The quantum anomalous Hall (QAH) insulator is a topological quantum state with quantized Hall resistance and zero longitudinal resistance in the absence of an external magnetic field. The QAH insulator carries spin-polarized dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances on the QAH effect over the past decade, the QAH insulator has thus far eluded any practical applications. In addition to its low working temperature, the QAH state in magnetically doped topological insulator (TI) films/heterostructures usually deteriorates with time in ambient conditions. In this work, we prepare three QAH devices with similar initial properties and store them in different environments to investigate the evolution of their transport properties. The QAH device without a protection layer in air show clear degradation and becomes hole-doped with the charge neutral point shifting significantly to positive gate voltages. The QAH device kept in an argon glove box without a protection layer shows no measurable degradation after 560 hours and the device protected by a 3 nm AlOx protection layer in air shows minimal degradation with stable QAH properties. Our work shows a route to preserve the dissipation-free chiral edge state in QAH devices for potential applications in quantum information technology.
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Submitted 16 December, 2022;
originally announced December 2022.
