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Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds
Authors:
E. Sasioglu,
M. Tas,
S. Ghosh,
W. Beida,
B. Sanyal S. Blugel,
I. Mertig,
I. Galanakis
Abstract:
Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic do**. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be…
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Gapped metals, a recently discovered new class of materials, possess a band gap slightly above or below the Fermi level. These materials are intrinsic p- or n-type semiconductors eliminating the need for extrinsic do**. Inspired by this concept, we propose the so-called "spin-gapped metals" exhibiting intrinsic p- or n-type behavior for each spin channel independently. Their properties would be similar to the dilute magnetic semiconductors eliminating the requirement for transition metal do**. Here, we demonstrate this novel concept in semi-Heusler compounds using first principles electronic band structure calculations. We comprehensively analyze their electronic and magnetic properties, paving the way for novel technological applications of Heusler compounds.
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Submitted 1 March, 2024;
originally announced March 2024.
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First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation
Authors:
Emel Gurbuz,
Murat Tas,
Ersoy Sasioglu,
Ingrid Mertig,
Biplab Sanyal,
Iosif Galanakis
Abstract:
The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds.…
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The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds. These compounds, which have 18 valence electrons per unit cell, are of great interest due to their thermoelectric properties, making them suitable for energy conversion applications. In addition, accounting for electronic correlations using the GW method also affects the calculated energy bandgaps compared to standard GGA calculations. The variations in calculated energy bandgaps are specific to each material when using different functionals. Hence, a detailed investigation of the electronic properties of each compound is necessary to determine the most appropriate functional for an accurate description of the electronic properties. Our results indicate that no general rules can be established and a comparison with experimental results is required to determine the most appropriate functional.
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Submitted 7 December, 2023; v1 submitted 6 December, 2023;
originally announced December 2023.
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Ab-initio calculation of the Hubbard $U$ and Hund exchange $J$ in local moment magnets: The case of Mn-based full Heusler compounds
Authors:
M. Tas,
E. Sasioglu,
S. Blugel,
I. Mertig,
I. Galanakis
Abstract:
Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the ef…
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Mn-based full Heusler compounds possess well-defined local atomic Mn moments, and thus the correlation effects between localized d electrons are expected to play an important role in determining the electronic and magnetic properties of these materials. Employing ab-initio calculations in conjunction with the constrained random-phase approximation (cRPA) method, we calculate the strength of the effective on-site Coulomb interaction parameters (Hubbard U and Hund exchange J) in the case of X2MnZ full Heusler compounds with X being one of Ni, Pd or Cu, and Z being one of In, Sn, Sb or Te. We show that the Z element (or sp element) in Heusler compounds significantly reduces the strength of the Hubbard U parameter for Mn 3d electrons compared to the elementary bulk Mn. On the contrary, the effect of the sp-atom on the strength of the U parameter of Ni, Cu or Pd valence d electrons is not so substantial with respect to the elementary bulk values. The U values for all transition metal atoms decrease with increasing sp electron number in the In-Sn-Sb-Te sequence. Our cRPA calculations reveal that despite their well-defined local magnetic moments, the Mn-based full Heusler alloys fall into the category of the weakly correlated materials.
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Submitted 24 October, 2022;
originally announced October 2022.
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Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments
Authors:
Dmitrii Nabok,
Murat Tas,
Shotaro Kusaka,
Engin Durgun,
Christoph Friedrich,
Gustav Bihlmayer,
Stefan Blügel,
Toru Hirahara,
Irene Aguilera
Abstract:
We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle elect…
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We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$.
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Submitted 19 April, 2022;
originally announced April 2022.
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Broadband and Wide-Angle Invisibility with PT-Symmetric 2D-Weyl Semimetal
Authors:
Mustafa Sarisaman,
Murat Tas
Abstract:
Inspired by the magnificent features of two-dimensional (2D) materials which aroused much of the interest in recent materials science research, we study PT-symmetric 2D Weyl semimetal (WSM) to reveal the broadband and wide-angle invisible configurations in a PT-symmetric optical slab system. Desired unidirectional reflectionlessness and invisibility phenomena is obtained by the optimal control of…
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Inspired by the magnificent features of two-dimensional (2D) materials which aroused much of the interest in recent materials science research, we study PT-symmetric 2D Weyl semimetal (WSM) to reveal the broadband and wide-angle invisible configurations in a PT-symmetric optical slab system. Desired unidirectional reflectionlessness and invisibility phenomena is obtained by the optimal control of system parameters. We unravel the mystery of broadband and wide-angle invisibility in regular slab materials with finite refractive indices by means of the plenary expressions. We show that materials whose refractive indices relatively small (usually around $η=1$) give rise to quite a lot broadband and wide-angle (almost all incidence angles) invisible configurations. This is not observed with any 2D material other than 2D WSMs. Our findings suggest a concrete expedience to experimental realizations in this direction.
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Submitted 31 December, 2019;
originally announced January 2020.
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Lasing with Topological Weyl Semimetal
Authors:
Güneş Oktay,
Mustafa Sarisaman,
Murat Tas
Abstract:
Lasing behavior of optically active planar topological Weyl semimetal (TWS) is investigated in view of the Kerr and Faraday rotations. Robust topological character of TWS is revealed by the presence of Weyl nodes and relevant surface conductivities. We focus our attention on the surfaces where no Fermi arcs are formed, and thus Maxwell equations contain topological terms. We explicitly demonstrate…
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Lasing behavior of optically active planar topological Weyl semimetal (TWS) is investigated in view of the Kerr and Faraday rotations. Robust topological character of TWS is revealed by the presence of Weyl nodes and relevant surface conductivities. We focus our attention on the surfaces where no Fermi arcs are formed, and thus Maxwell equations contain topological terms. We explicitly demonstrate that two distinct lasing modes arise because of the presence of effective refractive indices which lead to the birefringence phenomena. Transfer matrix is constructed in such a way that reflection and transmission amplitudes involve $2\times2$ matrix-valued components describing the bimodal character of the TWS laser. We provide associated parameters of the topological laser system yielding the optimal impacts. We reveal that gain values corresponding to the lasing threshold display a quantized behavior, which occurs due to topological character of the system. Our proposal is supported by the corresponding graphical demonstrations. Our observations and predictions suggest a concrete way of forming TWS laser and coherent perfect absorber; and are awaited to be confirmed by an experimental realization based on our computations.
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Submitted 24 February, 2020; v1 submitted 14 May, 2019;
originally announced May 2019.
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Broadband Coherent Perfect Absorber with PT-Symmetric 2D-Materials
Authors:
Mustafa Sarisaman,
Murat Tas
Abstract:
We suggest graphene and a two-dimensional (2D) Weyl semimetal (WSM) as 2D materials for the realization of a broadband coherent perfect absorber (CPA) respecting overall PT-symmetry. We also demonstrate the conditions for mutually equal amplitudes and phases of the left and right incoming waves to realize a CPA. 2D materials in our system play the role to enhance the absorption rate of a CPA once…
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We suggest graphene and a two-dimensional (2D) Weyl semimetal (WSM) as 2D materials for the realization of a broadband coherent perfect absorber (CPA) respecting overall PT-symmetry. We also demonstrate the conditions for mutually equal amplitudes and phases of the left and right incoming waves to realize a CPA. 2D materials in our system play the role to enhance the absorption rate of a CPA once the appropriate parameters are inserted in the system. We show that a 2D WSM is more effective than graphene in obtaining the optimal conditions. We display the behavior of each parameter governing the optical system and show that optimal conditions of these parameters give rise to enhancement and possible experimental realization of a broadband CPA-laser.
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Submitted 14 May, 2019;
originally announced May 2019.
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$\mathcal{P}\mathcal{T}$-Symmetric Coherent Perfect Absorber with Graphene
Authors:
Mustafa Sarisaman,
Murat Tas
Abstract:
We investigate $\mathcal{PT}$-symmetric coherent perfect absorbers (CPAs) in the TE mode solution of a linear homogeneous optical system surrounded by graphene sheets. It is revealed that presence of graphene sheets contributes the enhancement of absorption in a coherent perfect absorber. We derive exact analytic expressions, and work through their possible impacts on lasing threshold and CPA cond…
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We investigate $\mathcal{PT}$-symmetric coherent perfect absorbers (CPAs) in the TE mode solution of a linear homogeneous optical system surrounded by graphene sheets. It is revealed that presence of graphene sheets contributes the enhancement of absorption in a coherent perfect absorber. We derive exact analytic expressions, and work through their possible impacts on lasing threshold and CPA conditions. We point out roles of each parameter governing optical system with graphene and show that optimal conditions of these parameters give rise to enhancement and possible experimental realization of a CPA laser. Presence of graphene leads the required gain amount to reduce considerably based on its chemical potential and temperature. We obtain that relation between system parameters decides the measure of CPA condition. We find out that graphene features contributing to resonance effect in graphene sheets are rather preferable to build a better coherent perfect absorber.
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Submitted 29 December, 2018;
originally announced December 2018.
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Unidirectional Invisibility and PT-Symmetry with Graphene
Authors:
Mustafa Sarisaman,
Murat Tas
Abstract:
We investigate the reflectionlessness and invisibility properties in the transverse electric (TE) mode solution of a linear homogeneous optical system which comprises the $\mathcal{PT}$-symmetric structures covered by graphene sheets. We derive analytic expressions, indicate roles of each parameter governing optical system with graphene and justify that optimal conditions of these parameters give…
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We investigate the reflectionlessness and invisibility properties in the transverse electric (TE) mode solution of a linear homogeneous optical system which comprises the $\mathcal{PT}$-symmetric structures covered by graphene sheets. We derive analytic expressions, indicate roles of each parameter governing optical system with graphene and justify that optimal conditions of these parameters give rise to broadband and wide angle invisibility. Presence of graphene turns out to shift the invisible wavelength range and to reduce the required gain amount considerably, based on its chemical potential and temperature. We substantiate that our results yield broadband reflectionless and invisible configurations for realistic materials of small refractive indices, usually around $η= 1$, and of small thickness sizes with graphene sheets of rather small temperatures and chemical potentials. Finally, we demonstrate that pure $\mathcal{PT}$-symmetric graphene yields invisibility at small temperatures and chemical potentials.
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Submitted 9 January, 2018; v1 submitted 14 December, 2017;
originally announced December 2017.
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A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds
Authors:
M. Tas,
E. Sasioglu,
C. Friedrich,
I. Galanakis
Abstract:
Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment o…
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Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.
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Submitted 9 June, 2017; v1 submitted 6 March, 2017;
originally announced March 2017.
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Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study
Authors:
M. Tas,
E. Sasioglu,
C. Friedrich,
S. Blugel,
I. Galanakis
Abstract:
Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these c…
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Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations.
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Submitted 20 January, 2017; v1 submitted 24 November, 2016;
originally announced November 2016.
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Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors
Authors:
M. Tas,
E. Sasioglu,
I. Galanakis,
C. Friedrich,
S. Blugel
Abstract:
Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semicondu…
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Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element.
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Submitted 15 March, 2016;
originally announced March 2016.
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Spin Correlation Effects In a One Dimensional Electron Gas
Authors:
Murat Tas,
Mehmet Tomak
Abstract:
The Singwi, Sjolander, Tosi, Land (SSTL) approach is generalized to study the spin correlation effects in a one dimensional electron gas. It is shown that the SSTL approach is capable of generating results comparable to the more widely used STLS approach.
The Singwi, Sjolander, Tosi, Land (SSTL) approach is generalized to study the spin correlation effects in a one dimensional electron gas. It is shown that the SSTL approach is capable of generating results comparable to the more widely used STLS approach.
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Submitted 26 October, 2001;
originally announced October 2001.
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Short range correlations in a one dimensional electron gas
Authors:
Murat Tas,
Mehmet Tomak
Abstract:
We use the SSTL (Singwi, Sjolander, Tosi, Land) approximation to investigate the short--range correlations in a one dimensional electron gas, for the first time. Although SSTL is introduced to better satisfy the compressibility sum rule in three dimensions, the widely used STLS (Singwi, Tosi, Land, Sjolander) approximation turns out to be more successful in the case of the one dimensional electr…
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We use the SSTL (Singwi, Sjolander, Tosi, Land) approximation to investigate the short--range correlations in a one dimensional electron gas, for the first time. Although SSTL is introduced to better satisfy the compressibility sum rule in three dimensions, the widely used STLS (Singwi, Tosi, Land, Sjolander) approximation turns out to be more successful in the case of the one dimensional electron gas.
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Submitted 8 December, 2001; v1 submitted 3 October, 2001;
originally announced October 2001.
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Thermoelectric power of nondegenerate Kane semiconductors under the conditions of mutual electron-phonon drag in a high electric field
Authors:
M. M. Babaev,
T. M. Gassym,
M. Tas,
M. Tomak
Abstract:
The thermoelectric power of nondegenerate Kane semiconductors with due regard for the electron and phonon heating, and their thermal and mutual drags is investigated. The electron spectrum is taken in the Kane two-band form. It is shown that the nonparabolicity of electron spectrum significantly influences the magnitude of the thermoelectric power and leads to a change of its sign and dependence…
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The thermoelectric power of nondegenerate Kane semiconductors with due regard for the electron and phonon heating, and their thermal and mutual drags is investigated. The electron spectrum is taken in the Kane two-band form. It is shown that the nonparabolicity of electron spectrum significantly influences the magnitude of the thermoelectric power and leads to a change of its sign and dependence on the heating electric field. The field dependence of the thermoelectric power is determined analytically under various drag conditions.
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Submitted 29 January, 2003; v1 submitted 8 July, 2001;
originally announced July 2001.
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The influence of the mutual drag of carrier-phonon system on the thermopower and the transverse Nernst-Ettingshausen effect
Authors:
M. M. Babaev,
T. M. Gassym,
M. Tas,
M. Tomak
Abstract:
The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags.
The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms.…
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The thermopower and Nernst-Ettingshausen (NE) effect in degenerate semiconductors and semimetals placed in high electric and magnetic fields are calculated by taking into account the heating of both electrons and phonons as well as their thermal and mutual drags.
The magnetic and electric field dependences of the thermoelectric power and the transverse NE voltage are found in analytical forms. It is shown that in weak and high transverse magnetic fields, the electronic and phonon parts of NE coefficients change their sign for some scattering mechanisms.
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Submitted 29 January, 2003; v1 submitted 3 July, 2001;
originally announced July 2001.
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Phase Transition in Compact QED(3) and the Josephson Junction
Authors:
Vakif K. Onemli,
Murat Tas,
Bayram Tekin
Abstract:
We study the finite temperature phase transition in 2+1 dimensional compact QED and its dual theory: Josephson junction. Duality of these theories at zero temperature was established long time ago by Hosotani. Phase transition in compact QED is well studied and we employ the `duality' to study the superconductivity phase transition in a Josephson junction. For a thick junction we obtain a critic…
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We study the finite temperature phase transition in 2+1 dimensional compact QED and its dual theory: Josephson junction. Duality of these theories at zero temperature was established long time ago by Hosotani. Phase transition in compact QED is well studied and we employ the `duality' to study the superconductivity phase transition in a Josephson junction. For a thick junction we obtain a critical temperature in terms of the geometrical properties of the junction.
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Submitted 22 August, 2001; v1 submitted 16 May, 2001;
originally announced May 2001.
