Showing 1–50 of 64 results for author: Tartakovskii, A

Realization of Z$_2$ topological photonic insulators made from multilayer transition metal dichalcogenides

Authors: Tommi Isoniemi, Paul Bouteyre, Xuerong Hu, Fedor Benimetskiy, Yue Wang, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Alexander I. Tartakovskii

Abstract: Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently TMDs in their quasi-bulk form have started to show considerable promise for nanophotonics thanks to their high refractive indices, large optical anisotropy, wide transparency windows reaching to the visible, and robust room temperature e… ▽ More Monolayers of semiconducting transition metal dichalcogenides (TMDs) have long attracted interest for their intriguing optical and electronic properties. Recently TMDs in their quasi-bulk form have started to show considerable promise for nanophotonics thanks to their high refractive indices, large optical anisotropy, wide transparency windows reaching to the visible, and robust room temperature excitons promising for nonlinear optics. Adherence of TMD layers to any substrate via van der Waals forces is a further key enabler for nanofabrication of sophisticated photonic structures requiring heterointegration. Here, we capitalize on these attractive properties and realize topological spin-Hall photonic lattices made of arrays of triangular nanoholes in 50 to 100 nm thick WS$_2$ flakes exfoliated on SiO$_2$/Si substrates. High quality structures are achieved taking advantage of anisotropic dry etching dictated by the crystal axes of WS$_2$. Reflectance measurements at room temperature show a photonic gap opening in the near-infrared in trivial and topological phases. Unidirectional propagation along the domain interface is demonstrated in real space via circularly polarized laser excitation in samples with both zigzag and armchair domain boundaries. Finite-difference time-domain simulations are used to interpret optical spectroscopy results. Our work opens the way for future sophisticated nanophotonic devices based on the layered (van der Waals) materials platform. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Comments: 34 pages, 18 figures

Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields

Authors: Eyüp Yalcin, Ina V. Kalitukha, Ilya A. Akimov, Vladimir L. Korenev, Olga S. Ken, Jorge Puebla, Yoshichika Otani, Oscar M. Hutchings, Daniel J. Gillard, Alexander I. Tartakovskii, Manfred Bayer

Abstract: We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin inte… ▽ More We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Comments: 6 pages, 4 figures

Nonlinear Rydberg exciton-polaritons in Cu$_2$O microcavities

Authors: Maxim Makhonin, Anthonin Delphan, Kok Wee Song, Paul Walker, Tommi Isoniemi, Peter Claronino, Konstantinos Orfanakis, Sai Kiran Rajendran, Hamid Ohadi, Julian Heckötter, Marc Aßmann, Manfred Bayer, Alexander Tartakovskii, Maurice Skolnick, Oleksandr Kyriienko, Dmitry Krizhanovskii

Abstract: Rydberg excitons (analogues of Rydberg atoms in condensed matter systems) are highly excited bound electron-hole states with large Bohr radii. The interaction between them as well as exciton coupling to light may lead to strong optical nonlinearity, with applications in sensing and quantum information processing. Here, we achieve strong effective photon-photon interactions (Kerr-like optical nonli… ▽ More Rydberg excitons (analogues of Rydberg atoms in condensed matter systems) are highly excited bound electron-hole states with large Bohr radii. The interaction between them as well as exciton coupling to light may lead to strong optical nonlinearity, with applications in sensing and quantum information processing. Here, we achieve strong effective photon-photon interactions (Kerr-like optical nonlinearity) via the Rydberg blockade phenomenon and the hybridisation of excitons and photons forming polaritons in a Cu$_2$O-filled microresonators. Under pulsed resonant excitation polariton resonance frequencies are renormalised due to the reduction of the photon-exciton coupling with increasing exciton density. Theoretical analysis shows that the Rydberg blockade plays a major role in the experimentally observed scaling of the polariton nonlinearity coefficient as $\propto n^{4.4 \pm 1.8}$ for principal quantum numbers up to n = 7. Such high principal quantum numbers studied in a polariton system for the first time are essential for realisation of high Rydberg optical nonlinearities, which paves the way towards quantum optical applications and fundamental studies of strongly-correlated photonic (polaritonic) states in a solid state system. △ Less

Submitted 14 March, 2024; v1 submitted 5 January, 2024; originally announced January 2024.

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Authors: Alessandro Catanzaro, Armando Genco, Charalambos Louca, David A. Ruiz-Tijerina, Daniel J. Gillard, Luca Sortino, Aleksey Kozikov, Evgeny M. Alexeev, Riccardo Pisoni, Lee Hague, Kenji Watanabe, Takashi Taniguchi, Klauss Ensslin, Kostya S. Novoselov, Vladimir Fal'ko, Alexander I. Tartakovskii

Abstract: Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M… ▽ More Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: Supporting Information can be found downloading and extracting the gzipped tar source file listed under "Other formats"

Van der Waals Nanoantennas on Gold as Hosts for Hybrid Mie-Plasmonic Resonances

Authors: Sam A. Randerson, Panaiot G. Zotev, Xuerong Hu, Alexander Knight, Yadong Wang, Sharada Nagarkar, Dominic Hensman, Yue Wang, Alexander I. Tartakovskii

Abstract: Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices, however they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain the low losses of dielectric resonances, whilst gaining additional control over the tuning of the modes with the metal, and achieving stronger… ▽ More Dielectric nanoresonators have been shown to circumvent the heavy optical losses associated with plasmonic devices, however they suffer from less confined resonances. By constructing a hybrid system of both dielectric and metallic materials, one can retain the low losses of dielectric resonances, whilst gaining additional control over the tuning of the modes with the metal, and achieving stronger mode confinement. In particular, multi-layered van der Waals materials are emerging as promising candidates for integration with metals owing to their weak attractive forces, which enable deposition onto such substrates without the requirement of lattice matching. Here we use layered, high refractive index WS$_2$ exfoliated on gold, to fabricate and optically characterize a hybrid nanoantenna-on-gold system. We experimentally observe a hybridization of Mie resonances, Fabry-Pérot modes, and surface plasmon-polaritons launched from the nanoantennas into the substrate. We achieve experimental quality factors of Mie-plasmonic modes of up to 20 times that of Mie resonances in nanoantennas on silica, and observe signatures of a supercavity mode with a Q factor of 263 $\pm$ 28, resulting from strong mode coupling between a higher-order anapole and Fabry-Pérot-plasmonic mode. We further simulate WS$_2$ nanoantennas on gold with an hBN spacer, resulting in calculated electric field enhancements exceeding 2600, and a Purcell factor of 713. Our results demonstrate dramatic changes in the optical response of dielectric nanophotonic structures placed on gold, opening new possibilities for nanophotonics and sensing with simple-to-fabricate devices. △ Less

Submitted 3 May, 2023; v1 submitted 5 April, 2023; originally announced April 2023.

Comments: 21 + 11 pages, 5 + 7 figures

Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe$_3$ observed through Raman spectroscopy

Authors: Daniel J. Gillard, Daniel Wolverson, Oscar M. Hutchings, Alexander I. Tartakovskii

Abstract: Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom… ▽ More Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom providing new insights for develo** fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorous triselenide (MnPSe$_3$). We observe a nonlinear temperature dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the N{é}el temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants. △ Less

Submitted 8 January, 2024; v1 submitted 9 March, 2023; originally announced March 2023.

Comments: 20 pages, 4 figures, 1 table

Van der Waals Materials for Applications in Nanophotonics

Authors: Panaiot G. Zotev, Yue Wang, Daniel Andres-Penares, Toby Severs Millard, Sam Randerson, Xuerong Hu, Luca Sortino, Charalambos Louca, Mauro Brotons-Gisbert, Tahiyat Huq, Stefano Vezzoli, Riccardo Sapienza, Thomas F. Krauss, Brian Gerardot, Alexander I. Tartakovskii

Abstract: Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v… ▽ More Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials. △ Less

Submitted 31 October, 2022; v1 submitted 12 August, 2022; originally announced August 2022.

Journal ref: Laser and Photonics Reviews 2023 17(8), 2200957

Nonlinear interactions of dipolar excitons and polaritons in MoS2 bilayers

Authors: Charalambos Louca, Armando Genco, Salvatore Chiavazzo, Thomas P. Lyons, Sam Randerson, Chiara Trovatello, Peter Claronino, Rahul Jayaprakash, Kenji Watanabe, Takashi Taniguchi, Stefano Dal Conte, David G. Lidzey, Giulio Cerullo, Oleksandr Kyriienko, Alexander I. Tartakovskii

Abstract: Nonlinear interactions between excitons strongly coupled to light are key for accessing quantum many-body phenomena in polariton systems. Atomically-thin two-dimensional semiconductors provide an attractive platform for strong light-matter coupling owing to many controllable excitonic degrees of freedom. Among these, the recently emerged exciton hybridization opens access to unexplored excitonic s… ▽ More Nonlinear interactions between excitons strongly coupled to light are key for accessing quantum many-body phenomena in polariton systems. Atomically-thin two-dimensional semiconductors provide an attractive platform for strong light-matter coupling owing to many controllable excitonic degrees of freedom. Among these, the recently emerged exciton hybridization opens access to unexplored excitonic species, with a promise of enhanced interactions. Here, we employ hybridized interlayer excitons (hIX) in bilayer MoS2 to achieve highly nonlinear excitonic and polaritonic effects. Such interlayer excitons possess an out-of-plane electric dipole as well as an unusually large oscillator strength allowing observation of dipolar polaritons(dipolaritons) in bilayers in optical microcavities. Compared to excitons and polaritons in MoS2 monolayers, both hIX and dipolaritons exhibit about 8 times higher nonlinearity, which is further strongly enhanced when hIX and intralayer excitons, sharing the same valence band, are excited simultaneously. This gives rise to a highly nonlinear regime which we describe theoretically by introducing a concept of hole crowding. The presented insight into many-body interactions provides new tools for accessing few-polariton quantum correlations. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Giant effective Zeeman splitting in a monolayer semiconductor realized by spin-selective strong light-matter coupling

Authors: T. P. Lyons, D. J. Gillard, C. Leblanc, J. Puebla, D. D. Solnyshkov, L. Klompmaker, I. A. Akimov, C. Louca, P. Muduli, A. Genco, M. Bayer, Y. Otani, G. Malpuech, A. I. Tartakovskii

Abstract: Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional… ▽ More Strong coupling between light and the fundamental excitations of a two-dimensional electron gas (2DEG) are of foundational importance both to pure physics and to the understanding and development of future photonic nanotechnologies. Here we study the relationship between spin polarization of a 2DEG in a monolayer semiconductor, MoSe$_2$, and light-matter interactions modified by a zero-dimensional optical microcavity. We find robust spin-susceptibility of the 2DEG to simultaneously enhance and suppress trion-polariton formation in opposite photon helicities. This leads to observation of a giant effective valley Zeeman splitting for trion-polaritons (g-factor >20), exceeding the purely trionic splitting by over five times. Going further, we observe robust effective optical non-linearity arising from the highly non-linear behaviour of the valley-specific strong light-matter coupling regime, and allowing all-optical tuning of the polaritonic Zeeman splitting from 4 to >10 meV. Our experiments lay the groundwork for engineering quantum-Hall-like phases with true unidirectionality in monolayer semiconductors, accompanied by giant effective photonic non-linearities rooted in many-body exciton-electron correlations. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Journal ref: Nature Photonics (2022)

Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps

Authors: Panaiot G. Zotev, Yue Wang, Luca Sortino, Toby Severs Millard, Nic Mullin, Donato Conteduca, Mostafa Shagar, Armando Genco, Jamie K. Hobbs, Thomas F. Krauss, Alexander I. Tartakovskii

Abstract: Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structu… ▽ More Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe$_2$ monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 10$\pm$5 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trap**, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties. △ Less

Submitted 2 December, 2021; v1 submitted 19 May, 2021; originally announced May 2021.

Journal ref: ACS Nano 2022 16(4), 6493-6505

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Authors: Luca Sortino, Panaiot G. Zotev, Catherine L. Phillips, Alistair J. Brash, Javier Cambiasso, Elena Marensi, A. Mark Fox, Stefan A. Maier, Riccardo Sapienza, Alexander I. Tartakovskii

Abstract: Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) sat… ▽ More Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 10$^4$ times brighter photoluminescence than in WSe$_2$ placed on low-refractive-index SiO$_2$ pillars. We show that the key to these observations is the increase on average by a factor of 5 in the quantum efficiency of the emitters coupled to the nano-antennas. This further allowed us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors. △ Less

Submitted 19 October, 2021; v1 submitted 31 March, 2021; originally announced March 2021.

Journal ref: Nature Communications 12, 6063 (2021)

Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers

Authors: V. Kravtsov, A. D. Liubomirov, R. V. Cherbunin, A. Catanzaro, A. Genco, D. Gillard, E. M. Alexeev, T. Ivanova, E. Khestanova, I. A. Shelykh, I. V. Iorsh, A. I. Tartakovskii, M. S. Skolnick, D. N. Krizhanovskii

Abstract: Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with di… ▽ More Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and alignment of the constituent layers in the underlying dynamics remains largely unexplored. Here we study spin--valley relaxation dynamics in heterobilayers with different band structures engineered via the use of alloyed monolayer semiconductors. Through a combination of time-resolved Kerr rotation spectroscopic measurements and theoretical modelling for Mo$_{1-x}$W$_{x}$Se$_2$/WSe$_2$ samples with different chemical compositions and stacking angles, we uncover the roles of interlayer exciton recombination and charge carrier spin depolarization in the overall valley dynamics. Our results provide insights into the microscopic spin--valley polarization mechanisms in van der Waals heterostructures for the development of future 2D valleytronic devices. △ Less

Submitted 7 July, 2020; v1 submitted 27 May, 2020; originally announced May 2020.

Emergence of highly linearly polarized interlayer exciton emission in MoSe$_2$/WSe$_2$ heterobilayers with transfer-induced layer corrugation

Authors: Evgeny M. Alexeev, Nic Mullin, Pablo Ares, Harriet Nevison-Andrews, Oleksandr V. Skrypka, Tillmann Godde, Aleksey Kozikov, Lee Hague, Yibo Wang, Kostya S. Novoselov, Laura Fumagalli, Jamie K. Hobbs, Alexander I. Tartakovskii

Abstract: The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional mate… ▽ More The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the deformation of the polymer carrier film during the transfer, which can lead to highly non-uniform strain induced in the transferred two-dimensional material. Here, using a combination of optical spectroscopy, atomic force and Kelvin probe force microscopy, we show that the presence of nanometer scale wrinkles formed due to transfer-induced stress relaxation can lead to strong changes in the optical properties of MoSe$_2$/WSe$_2$ heterostructures and the emergence of the linearly polarized interlayer exciton photoluminescence. We attribute these changes to the local breaking of crystal symmetry in the nanowrinkles, which act as efficient accumulation centers for the interlayer excitons due to the strain-induced interlayer band gap reduction. The surface potential images of the rippled heterobilayer samples acquired using Kelvin probe force microscopy reveal the variation of the local work function consistent with the strain-induced band gap modulation, while the potential offset observed at the ridges of the wrinkles shows a clear correlation with the value of the tensile strain estimated from the wrinkle geometry. Our findings highlight the important role of the residual strain in defining optical properties of van der Waals heterostructures and suggest novel approaches for interlayer exciton manipulation by local strain engineering. △ Less

Submitted 12 April, 2020; originally announced April 2020.

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe$_2$ / CrBr$_3$ van der Waals heterostructures

Authors: T. P. Lyons, D. Gillard, A. Molina-Sánchez, A. Misra, F. Withers, P. S. Keatley, A. Kozikov, T. Taniguchi, K. Watanabe, K. S. Novoselov, J. Fernández-Rossier, A. I. Tartakovskii

Abstract: Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr… ▽ More Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr$_3$ in photoluminescence, whereby the valley polarization of the MoSe$_2$ trion state conforms closely to the local CrBr$_3$ magnetization, while the neutral exciton state remains insensitive to the ferromagnet. We attribute this to spin-dependent interlayer charge transfer occurring on timescales between the exciton and trion radiative lifetimes. Going further, we uncover by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of contrasting valley polarization, which we infer to be labyrinthine or otherwise highly intricate, with features smaller than 400 nm corresponding to our optical resolution. Our findings offer a unique insight into the interplay between short-lived valley excitons and spin-dependent interlayer tunnelling, while also highlighting MoSe$_2$ as a promising candidate to optically interface with exotic spin textures in van der Waals structures. △ Less

Submitted 21 October, 2020; v1 submitted 8 April, 2020; originally announced April 2020.

Journal ref: Nature Communications 11, 6021 (2020)

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Authors: Luca Sortino, Matthew Brooks, Panaiot G. Zotev, Armando Genco, Javier Cambiasso, Sandro Mignuzzi, Stefan A. Maier, Guido Burkard, Riccardo Sapienza, Alexander I. Tartakovskii

Abstract: Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale.… ▽ More Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe$_2 $ placed on photonic nano-antennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nano-antenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe$_2$ deposited on the nano-antennas of different radii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ is observed for WSe$_2$ monolayers. We also estimate that $>3\%$ strain is achieved in bilayers, accompanied with the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nano-scale parts of the WSe$_2$ layers, as also predicted by our theoretical model. Our results, of direct relevance for both dielectric and plasmonic nano-antennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light-matter interaction in nano-photonic devices. △ Less

Submitted 29 June, 2021; v1 submitted 11 February, 2020; originally announced February 2020.

Comments: peer-reviewed version, 4 figures main text, 5 figures supporting information

Journal ref: ACS Photonics 2020 7 (9), 2413-2422

Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging

Authors: T. Severs Millard, A. Genco, E. M. Alexeev, S. Randerson, S. Ahn, A. Jang, H. S. Shin, A. I. Tartakovskii

Abstract: CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to… ▽ More CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications. △ Less

Submitted 9 November, 2019; originally announced November 2019.

Comments: 32 pages including Supplementary Information, 6 figures

Journal ref: npj 2D Materials and Applications 4, Article number: 12 (2020)

Highly nonlinear trion-polaritons in a monolayer semiconductor

Authors: R. P. A. Emmanuele, M. Sich, O. Kyriienko, V. Shahnazaryan, F. Withers, A. Catanzaro, P. M. Walker, F. A. Benimetskiy, M. S. Skolnick, A. I. Tartakovskii, I. A. Shelykh, D. N. Krizhanovskii

Abstract: Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting tran… ▽ More Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting transition metal dichalcogenides (TMDCs). By hybridising trions in monolayer MoSe$_2$ at low electron densities with a microcavity mode, we realise trion-polaritons exhibiting significant energy shifts at very small photon fluxes due to phase space filling. Most notably, the strong trion-polariton nonlinearity is found to be 10 to 1000 larger than in other polariton systems, including neutral exciton-polaritons in TMDCs. Furthermore it exceeds by factors of $\sim 10^3-10^5$ the magnitude of Kerr nonlinearity in bare TMDCs, graphene and other widely used optical materials (e.g. Si, AlGaAs etc) in weak light-matter coupling regimes. The results are in good agreement with a theory which accounts for the composite nature of excitons and trions and deviation of their statistics from that of ideal bosons and fermions. This work opens a new highly nonlinear system for quantum optics applications enabling in principle scalability and control through nano-engineering of van der Waals heterostructures. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Comments: 7 pages of the main text, and 26 pages of supplemental materials (details of the experiment and full theory description). Please also see the quantum theory in arXiv:1910.11294

Journal ref: Nature Communications 11, 3589 (2020)

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

Authors: L. Sortino, P. G. Zotev, S. Mignuzzi, J. Cambiasso, D. Schmidt, A. Genco, M. Aßmann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii

Abstract: Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we… ▽ More Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe$_2$. We observe a photoluminescence enhancement exceeding 10$^4$ compared with WSe$_2$ placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10$^3$. Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors. △ Less

Submitted 11 November, 2019; v1 submitted 20 June, 2019; originally announced June 2019.

Comments: peer-reviewed version (9 pages main text, 4 Figures) with supporting information (7 pages, 6 Figures)

Journal ref: Nature Communications Volume 10, Article number: 5119 (2019)

Nonlinear polaritons in monolayer semiconductor coupled to optical bound states in the continuum

Authors: V. Kravtsov, E. Khestanova, F. A. Benimetskiy, T. Ivanova, A. K. Samusev, I. S. Sinev, D. Pidgayko, A. M. Mozharov, I. S. Mukhin, M. S. Lozhkin, Y. V. Kapitonov, A. S. Brichkin, V. D. Kulakovskii, I. A. Shelykh, A. I. Tartakovskii, P. M. Walker, M. S. Skolnick, D. N. Krizhanovskii, I. V. Iorsh

Abstract: Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical… ▽ More Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in such systems is particularly promising for enhancement of nonlinear optical processes and development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix optical BIC in a photonic crystal slab with excitons in atomically thin semiconductor MoSe$_2$ to form nonlinear exciton-polaritons with a Rabi splitting of 27~meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into far-field towards the BIC wavevector, in combination with effective reduction of excitonic disorder through motional narrowing, results in small polariton linewidths below 3~meV. Together with strongly wavevector-dependent Q-factor, this provides for enhancement and control of polariton--polariton interactions and resulting nonlinear optical effects, paving the way towards tunable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics. △ Less

Submitted 9 October, 2019; v1 submitted 31 May, 2019; originally announced May 2019.

Measurement of local optomechanical properties of a direct bandgap 2D semiconductor

Authors: F. Benimetskiy, V. Sharov, P. A. Alekseev, V. Kravtsov, K. Agapev, I. Sinev, I. Mukhin, A. Catanzaro, R. Polozkov, A. Tartakovskii, A. Samusev, M. S. Skolnick, D. N. Krizhanovskii, I. A. Shelykh, I. Iorsh

Abstract: Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe… ▽ More Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe$_2$ with an AFM tip and perform spatio-spectral map** of the excitonic photoluminescence in the vicinity of the indentation point. To fully reproduce the experimental data, we introduce the linear dependence of the exciton energy and corresponding photoluminescence intensity on the induced strain. Careful account for the optical resolution allows extracting these quantities with good agreement with the previous measurements, which involved macroscopic sample deformation. Our approach is a powerful tool for the study of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures

Authors: Evgeny M. Alexeev, David A. Ruiz-Tijerina, Mark Danovich, Matthew J. Hamer, Daniel J. Terry, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Maciej R. Molas, Maciej Koperski, Kenji Watanabe, Takashi Taniguchi, Kostya S. Novoselov, Roman V. Gorbachev, Hyeon Suk Shin, Vladimir I. Fal'ko, Alexander I. Tartakovskii

Abstract: Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu… ▽ More Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 43 pages, 14 figures, includes supplementary information

Journal ref: Nature 567, 81 (2019)

The valley Zeeman effect in inter- and intra-valley trions in monolayer WSe$_2$

Authors: T. P. Lyons, S. Dufferwiel, M. Brooks, F. Withers, T. Taniguchi, K. Watanabe, K. S. Novoselov, G. Burkard, A. I. Tartakovskii

Abstract: Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information processing applications utilizing a combination of electron spin and valley pseudospin. This unique spin system has led to observation of the valley Zeeman effect in neutral and charged excitonic resonances under applied magnetic fields. However, reported values of the trion valley Zeeman splitting remain h… ▽ More Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information processing applications utilizing a combination of electron spin and valley pseudospin. This unique spin system has led to observation of the valley Zeeman effect in neutral and charged excitonic resonances under applied magnetic fields. However, reported values of the trion valley Zeeman splitting remain highly inconsistent across studies. Here, we utilize high quality hBN encapsulated monolayer WSe$_2$ to enable simultaneous measurement of both intervalley and intravalley trion photoluminescence. We find the valley Zeeman splitting of each trion state to be describable only by a combination of three distinct g-factors, one arising from the exciton-like valley Zeeman effect, the other two, trion specific, g-factors associated with recoil of the excess electron. This complex picture goes significantly beyond the valley Zeeman effect reported for neutral excitons, and eliminates the ambiguity surrounding the magneto-optical response of trions in tungsten based TMD monolayers. △ Less

Submitted 21 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2330 (2019)

Valley coherent exciton-polaritons in a monolayer semiconductor

Authors: S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, F. Withers, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circ… ▽ More Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circular and linear polarization, respectively. However, the generated excitons have short lifetimes (ps) and are also subject to the electron-hole exchange interaction leading to fast relaxation of the valley pseudospin and coherence. Here we show that control of these processes can be gained by embedding a monolayer of WSe$_2$ in an optical microcavity, where part-light-part-matter exciton-polaritons are formed in the strong light-matter coupling regime. We demonstrate the optical initialization of the valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than that of the excitons. We further control the evolution of the polariton valley coherence using a Faraday magnetic field to rotate the valley pseudospin by an angle defined by the exciton-cavity-mode detuning, which exceeds the rotation angle in the bare exciton. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures. △ Less

Submitted 24 April, 2018; originally announced April 2018.

MOVPE growth, transmission electron microscopy and magneto-optical spectroscopy of individual InAsP/GaInP quantum dots

Authors: O. Del Pozo-Zamudio, J. Puebla, A. B. Krysa, R. Toro, A. M. Sanchez, R. Beanland, A. I. Tartakovskii, M. S. Skolnick, E. A. Chekhovich

Abstract: We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. I… ▽ More We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nominal As molar fraction. Magneto-photoluminescence experiments reveal QD emission in a wide range from 1.3 to 1.8 eV confirming incorporation of As into quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an As molar fraction up to x=0.12 is observed. The heavy hole g-factor is found to be strongly dependent on As molar fraction, while the electron g-factor is close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed which allows for further insight into structural properties using nuclear magnetic resonance. △ Less

Submitted 5 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 034605 (2017)

Resonantly excited exciton dynamics in two-dimensional MoSe$_2$ monolayers

Authors: L. Scarpelli, F. Masia, E. M. Alexeev, F. Withers, A. I. Tartakovskii, K. S. Novoselov, W. Langbein

Abstract: We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation w… ▽ More We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation within the intrinsic band structure, not requiring the inclusion of extrinsic effects. We find an exciton radiative lifetime in the sub-picosecond range consistent to what has been recently reported. After the dominating radiative decay, the remaining exciton density, which has been scattered from the initially excited bright radiative state into dark states of different nature by exciton-phonon scattering or disorder scattering, shows a slower dynamics, covering 10ps to 10ns timescales. This includes direct bright transitions with larger in-plane momentum, as well as indirect dark transitions to indirect dark states. We find that exciton-exciton annihilation is not relevant in the observed dynamics, in variance from previous finding under non-resonant excitation. The trion density at 77K reveals a decay of the order of 1ps, similar to what is observed for the exciton. After few tens of picoseconds, the trion dynamics resembles the one of the exciton, indicating that trion ionization occurs on this timescale. △ Less

Submitted 17 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 045407 (2017)

Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope

Authors: Evgeny M. Alexeev, Alessandro Catanzaro, Oleksandr V. Skrypka, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Kostya S. Novoselov, Hyeon Suk Shin, Alexander I. Tartakovskii

Abstract: Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc… ▽ More Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for develo** a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth. △ Less

Submitted 1 May, 2017; v1 submitted 23 December, 2016; originally announced December 2016.

Comments: 24 pages, 5 figures

Valley addressable exciton-polaritons in atomically thin semiconductors

Authors: S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, F. Withers, S. Schwarz, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported fo… ▽ More While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported for MoS$_2$, WSe$_2$ and WS$_2$ while MoSe$_2$ shows anomalously low valley polarisation retention. In this work, chiral selectivity of MoSe$_2$ cavity polaritons under helical excitation is reported with a polarisation degree that can be controlled by the exciton-cavity detuning. In contrast to the very low circular polarisation degrees seen in MoSe$_2$ exciton and trion resonances, we observe a significant enhancement of up to 7 times when in the polaritonic regime. Here, polaritons introduce a fast decay mechanism which inhibits full valley pseudospin relaxation and thus allows for increased retention of injected polarisation in the emitted light. A dynamical model applicable to cavity-polaritons in any TMD semiconductor, reproduces the detuning dependence through the incorporation of the cavity-modified exciton relaxation, allowing an estimate of the spin relaxation time in MoSe$_2$ which is an order of magnitude faster than those reported in other TMDs. The valley addressable exciton-polaritons reported here offer robust valley polarised states demonstrating the prospect of valleytronic devices based upon TMDs embedded in photonic structures, with significant potential for valley-dependent nonlinear polariton-polariton interactions. △ Less

Submitted 15 December, 2016; originally announced December 2016.

Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization

Authors: D. Schmidt, T. Godde, J. Schmutzler, M. Aßmann, J. Debus, F. Withers, E. M. Alexeev, O. Del Pozo-Zamudio, O. V. Skrypka, K. S. Novoselov, M. Bayer, A. I. Tartakovskii

Abstract: We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also… ▽ More We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied with strong changes in PL including suppression of the trion PL and decrease of the trion PL life-time, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and appearance of a pronounced slow PL decay component. In MoSe2 and WSe2 studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at T~10K. The observed behavior is a result of a complex interplay between influences of the specific energy ordering of bright and dark excitons in MoSe2 and WSe2, sample do**, trion and exciton localization and various temperature-dependent non-radiative processes. △ Less

Submitted 13 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 165301 (2016)

Electrically pumped single-defect light emitters in WSe$_2$

Authors: S. Schwarz, A. Kozikov, F. Withers, J. K. Maguire, A. P. Foster, S. Dufferwiel, L. Hague, M. N. Makhonin, L. R. Wilson, A . K. Geim, K. S. Novoselov, A. I. Tartakovskii

Abstract: Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects… ▽ More Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics. △ Less

Submitted 6 May, 2016; originally announced May 2016.

Journal ref: 2D Mater. 3 (2016) 025038

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Authors: F. Withers, O. Del Pozo-Zamudio, S. Schwarz, S. Dufferwiel, P. M. Walker, T. Godde, A. P. Rooney, A. Gholinia, C. R. Woods, P. Blake, S. J. Haigh, K. Watanabe, T. Taniguchi, I. L. Aleiner, A. K. Geim, V. I. Falko, A. I. Tartakovskii, K. S. Novoselov

Abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext… ▽ More Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Magneto-phonon resonance in photoluminescence excitation spectra of magneto-excitons in GaAs/AlGaAs Superlattices

Authors: S. Dickmann, A. I. Tartakovskii, V. B. Timofeev, V. M. Zhilin, J. Zeman, G. Martinez, J. M. Hvam

Abstract: Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of e… ▽ More Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of energy separation $ΔE$ between excited ME peaks and the ground state of the system. The resonance profiles have been found to have maxima at $ΔE_{\rm max}$ close to the energy of the GaAs LO-phonon. However, the value of $ΔE_{\rm max}$ depends on quantum numbers of the excited ME state. The revealed very low quantum efficiency of the investigated sample allows us to ascribe the observed resonance to the enhancement of the non-radiative magneto-exciton relaxation rate arising due to LO-phonon emission. The presented theoretical model, being in a good agreement with experimental observations, provides a method to extract 1sHH magneto-exciton ``in-plane" dispersion from the dependence of $ΔE_{\rm max}$ on the excited ME state quantum numbers. △ Less

Submitted 3 November, 2015; originally announced November 2015.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 62, 2743 (2000) - Published 15 July 2000

Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots

Authors: Ata Ulhaq, Qingqing Duan, Fei Ding, Eugenio Zallo, Oliver G. Schmidt, Maurice S. Skolnick, Alexander I. Tartakovskii, Evgeny A. Chekhovich

Abstract: GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control sche… ▽ More GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to $60\%$ achieved. NMR spectroscopy reveals the structure of two types of quantum dots and yields the small magnitude of residual strain $ε_b<0.02\%$ which nevertheless leads to long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclear spin environment is advantageous for applications in quantum information processing. △ Less

Submitted 23 July, 2015; originally announced July 2015.

Journal ref: Phys. Rev. B 93, 165306 (2016)

Photoluminescence and Raman investigation of stability of InSe and GaSe thin films

Authors: O. Del Pozo-Zamudio, S. Schwarz, J. Klein, R. C. Schofield, E. A. Chekhovich, O. Ceylan, E. Margapoti, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov, J. J. Finley, A. I. Tartakovskii

Abstract: Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when… ▽ More Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$. △ Less

Submitted 18 June, 2015; originally announced June 2015.

Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb NMR spectroscopy

Authors: A. M. Waeber, M. Hopkinson, I. Farrer, D. A. Ritchie, J. Nilsson, R. M. Stevenson, A. J. Bennett, A. J. Shields, G. Burkard, A. I. Tartakovskii, M. S. Skolnick, E. A. Chekhovich

Abstract: One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses u… ▽ More One of the key challenges in spectroscopy is inhomogeneous broadening that masks the homogeneous spectral lineshape and the underlying coherent dynamics. A variety of techniques including four-wave mixing and spectral hole-burning are used in optical spectroscopy while in nuclear magnetic resonance (NMR) spin-echo is the most common way to counteract inhomogeneity. However, the high-power pulses used in spin-echo and other sequences often create spurious dynamics obscuring the subtle spin correlations that play a crucial role in quantum information applications. Here we develop NMR techniques that allow the correlation times of the fluctuations in a nuclear spin bath of individual quantum dots to be probed. This is achieved with the use of frequency comb excitation which allows the homogeneous NMR lineshapes to be measured avoiding high-power pulses. We find nuclear spin correlation times exceeding 1 s in self-assembled InGaAs quantum dots - four orders of magnitude longer than in strain-free III-V semiconductors. The observed freezing of the nuclear spin fluctuations opens the way for the design of quantum dot spin qubits with a well-understood, highly stable nuclear spin bath. △ Less

Submitted 14 June, 2015; originally announced June 2015.

Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities

Authors: S. Dufferwiel, S. Schwarz, F. Withers, A. A. P. Trichet, F. Li, M. Sich, O. Del Pozo-Zamudio, C. Clark, A. Nalitov, D. D. Solnyshkov, G. Malpuech, K. S. Novoselov, J. M. Smith, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microc… ▽ More Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised. △ Less

Submitted 17 May, 2015; originally announced May 2015.

Optical properties of two-dimensional gallium chalcogenide films

Authors: O. Del Pozo-Zamudio, S. Schwarz, M. Sich, I. A. Akimov, M. Bayer, R. C. Schofield, E. A. Chekhovich, B. J. Robinson, N. D. Kay, O. V. Kolosov, A. I. Dmitriev, G. V. Lashkarev, D. N. Borisenko, N. N. Kolesnikov, A. I. Tartakovskii

Abstract: Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we p… ▽ More Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states. △ Less

Submitted 17 March, 2015; v1 submitted 9 January, 2015; originally announced January 2015.

Journal ref: 2D Materials, 2 (3), 035010 (2015)

Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

Authors: F. Withers, O. Del Pozo-Zamudio, A. Mishchenko, A. P. Rooney, A. Gholinia, K. Watanabe, T. Taniguchi, S. J. Haigh, A. K. Geim, A. I. Tartakovskii, K. S. Novoselov

Abstract: The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waal… ▽ More The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality. △ Less

Submitted 24 December, 2014; originally announced December 2014.

Journal ref: Nature Materials, 14, 301-306 (2015)

All-optical formation of coherent dark states of silicon-vacancy spins in diamond

Authors: Benjamin **ault, Jonas N. Becker, Carsten H. H. Schulte, Carsten Arend, Christian Hepp, Tillmann Godde, Alexander I. Tartakovskii, Matthew Markham, Christoph Becher, Mete Atature

Abstract: Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum.… ▽ More Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trap**. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses. △ Less

Submitted 14 September, 2014; originally announced September 2014.

Comments: Additional data and analysis is available for download in PDF format at the publications section of http://www.amop.phy.cam.ac.uk/amop-ma

Journal ref: Phys. Rev. Lett. 113, 263601 (2014)

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Authors: S. Schwarz, S. Dufferwiel, P. M. Walker, F. Withers, A. A. P. Trichet, M. Sich, F. Li, E. A. Chekhovich, D. N. Borisenko, N. N. Kolesnikov, K. S. Novoselov, M. S. Skolnick, J. M Smith, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here… ▽ More Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals. △ Less

Submitted 15 August, 2014; originally announced August 2014.

Journal ref: Nano Lett., 14, 7003, 2014

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Authors: Ceyhun Bulutay, E. A. Chekhovich, A. I. Tartakovskii

Abstract: A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational s… ▽ More A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation-alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field. △ Less

Submitted 20 November, 2014; v1 submitted 2 August, 2014; originally announced August 2014.

Comments: Published version, 17 pages, 18 figures

Journal ref: Phys. Rev. B 90, 205425 (2014)

Influence of Nuclear Quadrupole Moments on Electron Spin Coherence in Semiconductor Quantum Dots

Authors: Erik Welander, Evgeny Chekhovich, Alexander Tartakovskii, Guido Burkard

Abstract: We theoretically investigate the influence of the fluctuating Overhauser field on the spin of an electron confined to a quantum dot (QD). The fluctuations arise from nuclear angular momentum being exchanged between different nuclei via the nuclear magnetic dipole coupling. We focus on the role of the nuclear electric quadrupole moments (QPMs), which generally cause a reduction in internuclear spin… ▽ More We theoretically investigate the influence of the fluctuating Overhauser field on the spin of an electron confined to a quantum dot (QD). The fluctuations arise from nuclear angular momentum being exchanged between different nuclei via the nuclear magnetic dipole coupling. We focus on the role of the nuclear electric quadrupole moments (QPMs), which generally cause a reduction in internuclear spin transfer efficiency in the presence of electric field gradients. The effects on the electron spin coherence time are studied by modeling an electron spin echo experiment. We find that the QPMs cause an increase in the electron spin coherence time and that an inhomogeneous distribution of the quadrupolar shift, where different nuclei have different shifts in energy, causes an even larger increase in the electron coherence time than a homogeneous distribution. Furthermore, a partial polarization of the nuclear spin ensemble amplifies the effect of the inhomogeneous quadrupolar shifts, causing an additional increase in electron coherence time, and provides an alternative to the experimentally challenging suggestion of full dynamic nuclear spin polarization. △ Less

Submitted 6 May, 2014; originally announced May 2014.

Comments: 7 pages, 8 figures

Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots

Authors: E. A. Chekhovich, M. Hopkinson, M. S. Skolnick, A. I. Tartakovskii

Abstract: Decoherence in quantum logic gates (qubits) due to interaction with the surrounding environment is a major obstacle to the practical realization of quantum information technologies. For solid state electron-spin qubits the interaction with nuclear spins is the main problem. One particular, neradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclea… ▽ More Decoherence in quantum logic gates (qubits) due to interaction with the surrounding environment is a major obstacle to the practical realization of quantum information technologies. For solid state electron-spin qubits the interaction with nuclear spins is the main problem. One particular, neradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclear-nuclear dipolar interactions. Due to its many-body nature nuclear decoherence is difficult to predict, especially for an important class of strained nanostructures where nuclear quadrupolar effects have a significant but largely unknown impact. Here we report direct measurement of nuclear spin bath coherence in individual strained InGaAs/GaAs quantum dots: nuclear spin-echo coherence times in the range T2~1.2 - 4.5 ms are found. Based on these T2 values we demonstrate that quadrupolar interactions make nuclear fluctuations in strained quantum dots much slower compared to lattice matched GaAs/AlGaAs structures. Such fluctuation suppression is particularly strong for arsenic nuclei due to the effect of atomic disorder of gallium and indium alloying. Our findings demonstrate that quadrupolar effects can help to solve the long-standing challenge of designing a scalable hardware for quantum computation: III-V semiconductor spin-qubits can be engineered to have a noise-free nuclear spin bath (previously achievable only in nuclear spin-0 semiconductors, where qubit network interconnection and scaling is challenging). △ Less

Submitted 21 March, 2014; v1 submitted 6 March, 2014; originally announced March 2014.

Journal ref: Nature Communications 6, 6348 (2015)

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

Authors: D. O. Kundys, P. Murzyn, J. P. R. Wells, A. I. Tartakovskii, M. S. Skolnick, Le Si Dang, E. V. Lutsenko, N. P. Tarasuk, O. G. Lyublinskaya, A. A. Toropov, S. V. Ivanov

Abstract: We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 4… ▽ More We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample. △ Less

Submitted 17 January, 2014; originally announced January 2014.

Journal ref: Journal of Applied Physics 100, 123510 (2006)

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation

Authors: J. Puebla, E. A. Chekhovich, M. Hopkinson, P. Senellart, A. Lemaitre, M. S. Skolnick, A. I. Tartakovskii

Abstract: We study experimentally the dependence of dynamic nuclear spin polarization on the power of non-resonant optical excitation in two types of individual neutral semiconductor quantum dots: InGaAs/GaAs and GaAs/AlGaAs. We show that the mechanism of nuclear spin pum** via second order recombination of optically forbidden (''dark'') exciton states recently reported in InP/GaInP quantum dots [Phys. Re… ▽ More We study experimentally the dependence of dynamic nuclear spin polarization on the power of non-resonant optical excitation in two types of individual neutral semiconductor quantum dots: InGaAs/GaAs and GaAs/AlGaAs. We show that the mechanism of nuclear spin pum** via second order recombination of optically forbidden (''dark'') exciton states recently reported in InP/GaInP quantum dots [Phys. Rev. B 83, 125318 (2011)] is relevant for material systems considered in this work. In the InGaAs/GaAs dots this nuclear spin polarization mechanism is particularly pronounced, resulting in Overhauser shifts up to ~80 micro-eV achieved at optical excitation power ~1000 times smaller than the power required to saturate ground state excitons. The Overhauser shifts observed at low-power optical pum** in the interface GaAs/AlGaAs dots are generally found to be smaller (up to ~40 micro-eV). Furthermore in GaAs/AlGaAs we observe dot-to-dot variation and even sign reversal of the Overhauser shift which is attributed to dark-bright exciton mixing originating from electron-hole exchange interaction in dots with reduced symmetry. Nuclear spin polarization degrees reported in this work under ultra-low power optical pum** are comparable to those achieved by techniques such as resonant optical pum** or above-gap pum** with high power circularly polarized light. Dynamic nuclear polarization via second-order recombination of ''dark'' excitons may become a useful tool in single quantum dot applications, where manipulation of the nuclear spin environment or electron spin is required. △ Less

Submitted 3 June, 2013; originally announced June 2013.

Comments: Submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 88, 045306 (2013)

Optical investigation of the natural electron do** in thin MoS2 films deposited on dielectric substrates

Authors: D. Sercombe, S. Schwarz, O. Del Pozo-Zamudio, F. Liu, B. J. Robinson, E. A. Chekhovich, I. I. Tartakovskii, O. Kolosov, A. I. Tartakovskii

Abstract: Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment… ▽ More Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional cap** of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials. △ Less

Submitted 21 January, 2014; v1 submitted 26 April, 2013; originally announced April 2013.

Comments: latest version

Journal ref: Scientific Reports 3, 3489 (2013)

III-V quantum light source and cavity-QED on Silicon

Authors: Isaac J. Luxmoore, Romain Toro, Osvaldo Del Pozo-Zamudio, Nicholas A. Wasley, Evgeny A. Chekhovich, Ana M. Sanchez, Richard Beanland, A. Mark Fox, Maurice S. Skolnick, Huiyun Y. Liu, Alexander I. Tartakovskii

Abstract: Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sour… ▽ More Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems. △ Less

Submitted 22 November, 2012; originally announced November 2012.

Journal ref: Scientific Reports 3, 1239 (2013)

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Authors: O. D. D. Couto Jr, D. Sercombe, J. Puebla, L. Otubo, I. J. Luxmoore, M. Sich, T. J. Elliott, E. A. Chekhovich, L. R. Wilson, M. S. Skolnick, H. Y. Liu, A. I. Tartakovskii

Abstract: We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison… ▽ More We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP cap** in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench. △ Less

Submitted 23 June, 2012; v1 submitted 21 June, 2012; originally announced June 2012.

Journal ref: Nano Lett., 12, 5269 (2012)

High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures

Authors: E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa, M. Hopkinson, A. D. Andreev, A. M. Sanchez, R. Beanland, M. S. Skolnick, A. I. Tartakovskii

Abstract: Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link… ▽ More Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Alternative non-invasive techniques such as optically detected nuclear magnetic resonance (ODNMR) so far proved difficult in semiconductor nano-structures due to significant strain-induced quadrupole broadening of the NMR spectra. Here, we develop new high sensitivity techniques that move ODNMR to a new regime, allowing high resolution spectroscopy of as few as 100000 quadrupole nuclear spins. By applying these techniques to individual strained self-assembled quantum dots, we measure strain distribution and chemical composition in the volume occupied by the confined electron. Furthermore, strain-induced spectral broadening is found to lead to suppression of nuclear spin magnetization fluctuations thus extending spin coherence times. The new ODNMR methods have potential to be applied for non-invasive investigations of a wide range of materials beyond single nano-structures, as well as address the task of understanding and control of nuclear spins on the nanoscale, one of the central problems in quantum information processing. △ Less

Submitted 17 December, 2011; originally announced December 2011.

Journal ref: Nature Nanotechnology 7, 646 (2012)

Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots

Authors: E. A. Chekhovich, A. B. Krysa, M. Hopkinson, P. Senellart, A. Lemaitre, M. S. Skolnick, A. I. Tartakovskii

Abstract: Decoherence caused by nuclear field fluctuations is a fundamental obstacle to the realization of quantum information processing using single electron spins. Alternative proposals have been made to use spin qubits based on valence band holes having weaker hyperfine coupling. However, it was demonstrated recently both theoretically and experimentally that the hole hyperfine interaction is not neglig… ▽ More Decoherence caused by nuclear field fluctuations is a fundamental obstacle to the realization of quantum information processing using single electron spins. Alternative proposals have been made to use spin qubits based on valence band holes having weaker hyperfine coupling. However, it was demonstrated recently both theoretically and experimentally that the hole hyperfine interaction is not negligible, although a consistent picture of the mechanism controlling the magnitude of the hole-nuclear coupling is still lacking. Here we address this problem by performing isotope selective measurement of the valence band hyperfine coupling in InGaAs/GaAs, InP/GaInP and GaAs/AlGaAs quantum dots. Contrary to existing models we find that the hole hyperfine constant along the growth direction of the structure (normalized by the electron hyperfine constant) has opposite signs for different isotopes and ranges from -15% to +15%. We attribute such changes in hole hyperfine constants to the competing positive contributions of p-symmetry atomic orbitals and the negative contributions of d-orbitals. Furthermore, we find that the d-symmetry contribution leads to a new mechanism for hole-nuclear spin flips which may play an important role in hole spin decoherence. In addition the measured hyperfine constants enable a fundamentally new approach for verification of the computed Bloch wavefunctions in the vicinity of nuclei in semiconductor nanostructures. △ Less

Submitted 3 October, 2012; v1 submitted 4 September, 2011; originally announced September 2011.

Journal ref: Nature Physics 9, 74-78 (2013)

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

Authors: O. D. D. Couto Jr., J. Puebla, E. A. Chekhovich, I. J. Luxmoore, C. J. Elliott, N. Babazadeh, M. S. Skolnick, A. I. Tartakovskii, A. B. Krysa

Abstract: We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify th… ▽ More We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system. △ Less

Submitted 13 July, 2011; originally announced July 2011.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 84 125301 (2011)