Showing 1–50 of 1,906 results for author: Taniguchi, T

Single-Ion Spectroscopy of h-BN Point Defect Fluorescence in Liquid Environments

Authors: Yecun Wu, Kun Xu, Hori Pada Sarker, Takashi Taniguchi, Kenji Watanabe, Frank Abild-Pedersen, Arun Majumdar, Yi Cui, Yan-Kai Tzeng, Steven Chu

Abstract: Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions inte… ▽ More Understanding individual ions in solutions is essential for advancing our knowledge of complex chemical systems. However, tracking and detecting ions at the single-ion level in liquid environments remains a challenge. We introduce a strategy for visualization and differentiation of different ions in liquid environment via point defects in hexagonal boron nitride (h-BN) as the ion sensor. Ions interacting with the optically active point defects in h-BN alter emission properties, allowing us to capture these changes and visualize single ions. Using Li+ in organic electrolytes as a model, we observed a spectral shift of over 10 nm upon Li+ addition, and an over 50 nm red shift with applied electric fields due to reactions between Li+ and h-BN point defects. Frequency domain analysis further revealed the rapid dynamics of ion migration and the slow electrochemical reactions. We further spectroscopically differentiated various ions (H+, Li+, Na+, K+, Zn2+, Al3+) in aqueous solution. Each ion, with its distinct electron cloud configuration, interacts distinctively with the electron clouds of h-BN defects, resulting in specific and identifiable spectroscopic signatures. This ion sensing platform enables the direct visualization and differentiation of individual ions in a liquid environment, offering insights into chemical reactions at the single-ion level. This capability presents potential applications in various fields involving ions in liquids, including but not limited to biology, battery technology, and environmental science. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Enhancing resonant second harmonic generation in bilayer WSe2 by layer-dependent exciton-polaron effect

Authors: Soonyoung Cha, Tianyi Ouyang, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Chun Hung Lui

Abstract: Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages s… ▽ More Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages strong exciton resonance and layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. Our method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ~3% of the critical breakdown field. Our findings also reveal significant sensitivity of resonant SHG to carrier density and carrier type, with distinct enhancement and quenching observed across different gating regimes. This advancement offers an innovative approach to manipulating SHG in 2D excitonic materials and provides a potent spectroscopic tool for probing layer-dependent quantum states. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Correlated insulators in twisted mono-mono-bilayer graphene

Authors: ** Jiang, Kenji Watanabe, Takashi Taniguchi, Mitali Banerjee

Abstract: Graphene-based moiré superlattice featuring flat bands is a promising platform for studying strongly correlated states. By tuning two twist angles and displacement fields in twisted mono-mono-bilayer graphene (TMMBG), we observed a correlated metallic state evolved into a valley-polarized correlated insulator at the filling factor of $ν= -2$, with the coupling strength between the top two monolaye… ▽ More Graphene-based moiré superlattice featuring flat bands is a promising platform for studying strongly correlated states. By tuning two twist angles and displacement fields in twisted mono-mono-bilayer graphene (TMMBG), we observed a correlated metallic state evolved into a valley-polarized correlated insulator at the filling factor of $ν= -2$, with the coupling strength between the top two monolayer graphene intensifying. Moreover, the corresponding effective g-factor obtained from fitting the thermal activation gap is enhanced with the coupling strength, suggesting that TMMBG can be harnessed for develo** valleytronics devices. In addition, the observation of an unconventional correlated electron-hole insulator suggests that this state might be a candidate for an excitonic insulator, which may generated by the correlation from band nesting, which encourages further research in non-Fermi liquid physics. Our work reveals that tuning multiple twist angles can provide a unique route for studying quantum many-body states in twistronics. △ Less

Submitted 28 June, 2024; originally announced June 2024.

Imaging semiconductor-to-metal transition and topological flat bands of twisted bilayer MoTe2

Authors: Yufeng Liu, Yu Gu, Ting Bao, Ning Mao, Can Li, Shudan Jiang, Liang Liu, Dandan Guan, Yaoyi Li, Hao Zheng, Canhua Liu, Kenji Watanabe, Takashi Taniguchi, Wenhui Duan, **feng Jia, Xiaoxue Liu, Yang Zhang, Tingxin Li, Shiyong Wang

Abstract: Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought frac… ▽ More Two-dimensional (2D) moiré materials have emerged as a highly tunable platform for investigating novel quantum states of matter arising from strong electronic correlations and nontrivial band topology. Recently, topological flat bands formed in 2D semiconducting moiré superlattices have attracted great interests. In particular, a series of topological quantum phases, including the long-sought fractional quantum anomalous Hall (FQAH) effect, have recently been experimentally observed in twisted bilayer MoTe2 (tMoTe2). However, the microscopic information of tMoTe2 moiré superlattice and its electronic structure is still lacking. Here, we present scanning tunneling microscopy and spectroscopy (STM/STS) studies of the tMoTe2 moiré superlattice, with twist angles ranging from about 2.3° to 2.8°. We developed a contact-STM mode to apply pressure on tMoTe2 and observed a phase transition from band insulator to metal of tMoTe2 under pressure at the charge neutrality point. STM imaging reveals a pronounced in-plane lattice reconstruction with periodic strain redistribution in the tMoTe2, which serves as gauge fields for generating topological moiré bands. Importantly, the electronic states of the low-energy moiré flat bands primarily concentrate at the XM and MX regions as revealed by STS imaging. Such spatial distributions are nicely reproduced by our first principal calculations with a large-scale basis, suggesting the low-energy moiré flat bands are formed through the hybridization of K valley bands of the top layer and K' valley bands of the bottom layer. Overall, our findings provide compelling real-space evidence of electronic structure under pressure and topological flat bands of tMoTe2, paving the way for further STM/STS investigations of correlated topological states within the topological flat band in gate-tunable tMoTe2 devices. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Generalized anomalous Hall crystals in twisted bilayer-trilayer graphene

Authors: Ruiheng Su, Dacen Waters, Boran Zhou, Kenji Watanabe, Takashi Taniguchi, Ya-Hui Zhang, Matthew Yankowitz, Joshua Folk

Abstract: In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form an anomalous Hall crystal (AHC). Here, we report the observation of a generaliz… ▽ More In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form an anomalous Hall crystal (AHC). Here, we report the observation of a generalized AHC in twisted bilayer-trilayer graphene whose formation is seeded by the moire potential. The crystal quadruples the moire unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between +1 and -1 by electric and magnetic fields. Recent theories have predicted the generalized AHC to act as a parent state of the fractional quantum anomalous Hall effect, pointing to twisted bilayer-trilayer graphene as a promising platform in the search for new correlated and topological phenomena. △ Less

Submitted 25 June, 2024; originally announced June 2024.

An antiferromagnetic diode effect in even-layered MnBi2Te4

Authors: Anyuan Gao, Shao-Wen Chen, Barun Ghosh, Jian-Xiang Qiu, Yu-Fei Liu, Yugo Onishi, Chaowei Hu, Tiema Qian, Damien Bérubé, Thao Dinh, Houchen Li, Christian Tzschaschel, Seunghyun Park, Tianye Huang, Shang-Wei Lien, Zhe Sun, Sheng-Chin Ho, Bahadur Singh, Kenji Watanabe, Takashi Taniguchi, David C. Bell, Arun Bansil, Hsin Lin, Tay-Rong Chang, Amir Yacoby , et al. (4 additional authors not shown)

Abstract: In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu… ▽ More In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: 33+8 pages, 14+2 figures

Terahertz photocurrent probe of quantum geometry and interactions in magic-angle twisted bilayer graphene

Authors: Roshan Krishna Kumar, Geng Li, Riccardo Bertini, Swati Chaudhary, Krystian Nowakowski, Jeong Min Park, Sebastian Castilla, Zhen Zhan, Pierre A. Pantaleón, Hitesh Agarwal, Sergi Battle-Porro, Eike Icking, Matteo Ceccanti, Antoine Reserbat-Plantey, Giulia Piccinini, Julien Barrier, Ekaterina Khestanova, Takashi Taniguchi, Kenji Watanabe, Christoph Stampfer, Gil Refael, Francisco Guinea, Pablo Jarillo-Herrero, Justin C. W. Song, Petr Stepanov , et al. (2 additional authors not shown)

Abstract: Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompa… ▽ More Moiré materials represent strongly interacting electron systems bridging topological and correlated physics. Despite significant advances, decoding wavefunction properties underlying the quantum geometry remains challenging. Here, we utilize polarization-resolved photocurrent measurements to probe magic-angle twisted bilayer graphene, leveraging its sensitivity to the Berry connection that encompasses quantum "textures" of electron wavefunctions. Using terahertz light resonant with optical transitions of its flat bands, we observe bulk photocurrents driven by broken symmetries and reveal the interplay between electron interactions and quantum geometry. We observe inversion-breaking gapped states undetectable through quantum transport, sharp changes in the polarization axes caused by interaction-induced band renormalization, and recurring photocurrent patterns at integer fillings of the moiré unit cell that track the evolution of quantum geometry through the cascade of phase transitions. The large and tunable terahertz response intrinsic to flat-band systems offers direct insights into the quantum geometry of interacting electrons and paves the way for innovative terahertz quantum technologies. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

Authors: Gabriele Pasquale, Zhe Sun, Kenji Watanabe, Takashi Taniguchi, Andras Kis

Abstract: The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semic… ▽ More The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena. △ Less

Submitted 23 June, 2024; originally announced June 2024.

Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds

Authors: Samra Husremović, Oscar Gonzalez, Berit H. Goodge, Lilia S. Xie, Zhizhi Kong, Wanlin Zhang, Sae Hee Ryu, Stephanie M. Ribet, Karen C. Bustillo, Chengyu Song, Jim Ciston, Takashi Taniguchi, Kenji Watanabe, Colin Ophus, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, D. Kwabena Bediako

Abstract: The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However,… ▽ More The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However, crystallographic incommensurability and atomic-scale interfacial disorder can severely limit the types of materials amenable to this strategy, as well as the performance of these systems. Here, we demonstrate a method for synthesizing heterostructures comprising magnetic intercalation compounds of transition metal dichalcogenides (TMDs), through directed topotactic reaction of the TMD with a metal oxide. The mechanism of the intercalation reaction enables thermally initiated intercalation of the TMD from lithographically patterned oxide films, giving access to a new family of multi-component magnetic architectures through the combination of deterministic van der Waals assembly and directed intercalation chemistry. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Time-Domain Signatures of Distinct Correlated Insulators in a Moiré Superlattice

Authors: Eric A. Arsenault, Yiliu Li, Birui Yang, Takashi Taniguchi, Kenji Watanabe, James C. Hone, Cory R. Dean, Xiaodong Xu, X. -Y. Zhu

Abstract: Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and… ▽ More Among expanding discoveries of quantum phases in moiré superlattices, correlated insulators stand out as both the most stable and most commonly observed. Despite the central importance of these states in moiré physics, little is known about their underlying nature. Here, we use pump-probe spectroscopy to show distinct time-domain signatures of correlated insulators at fillings of one (v = -1) and two (v = -2) holes per moiré unit cell in the angle-aligned WSe2/WS2 system. Following photo-do**, we find that the disordering time of the v = -1 state is independent of excitation density (n_ex), as expected from the characteristic phonon response time associated with a polaronic state. In contrast, the disordering time of the v = -2 state scales with (n_ex)^-0.5, in agreement with plasmonic screening from free holons and doublons. These states display disparate reordering behavior dominated either by first order (v = -1) or second order (v = -2) recombination, suggesting the presence of Hubbard excitons and free carrier-like holons/doublons, respectively. Our work delineates the roles of electron-phonon (e-ph) versus electron-electron (e-e) interactions in correlated insulators on the moiré landscape and establishes non-equilibrium responses as mechanistic signatures for distinguishing and discovering quantum phases. △ Less

Submitted 21 June, 2024; originally announced June 2024.

Comments: 18 pages, 4 figures, +10 Supporting figures. arXiv admin note: text overlap with arXiv:2307.16563

Electrical switching of chirality in rhombohedral graphene Chern insulators

Authors: **g Ding, Hanxiao Xiang, Jiannan Hua, Wenqiang Zhou, Naitian Liu, Le Zhang, Na Xin, Kenji Watanabe, Takashi Taniguchi, Wei Zhu, Shuigang Xu

Abstract: A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by… ▽ More A Chern insulator hosts topologically protected chiral edge currents with quantized conductance characterized by its Chern number. Switching the chirality of the Chern insulator, namely, the direction of the edge current, is highly challenging due to topologically forbidden backscattering but is of considerable importance for the design of topological devices. Nevertheless, this can be achieved by reversing the sign of the Chern number through a topological phase transition. Here, we report electrically switchable chirality in rhombohedral heptalayer graphene-based Chern insulators. The surface flat band and giant Berry curvature in rhombohedral multilayer graphene provide a highly tunable platform for engineering the topological states. By introducing moire superlattices in rhombohedral heptalayer graphene, we observed a cascade of topological phase transitions at quarter electron filling of a moire band. The Chern number can be continuously tuned from 0, -1, 1 to 2 by electric fields, manifesting as a large anomalous Hall effect and following Streda's formula. Sign reversal and the anomalous Hall effect also occurred at non-integer fillings, suggesting the possibility of electrically tunable topological phase transitions within the regime of fractional Chern insulators. Our work establishes rhombohedral heptalayer graphene moire superlattices as a versatile platform for topological engineering. The realization of switchable chirality enhances the potential application of chiral edge currents in topological circuit interconnects. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Comments: 21 pages, 4 figures in main text

Observation of Electronic Viscous Dissipation in Graphene Magneto-thermal Transport

Authors: Artem Talanov, Jonah Waissman, Aaron Hui, Brian Skinner, Kenji Watanabe, Takashi Taniguchi, Philip Kim

Abstract: Hydrodynamic transport effectively describes the collective dynamics of fluids with well-defined thermodynamic quantities. With enhanced electron-electron interactions at elevated temperatures, the collective behavior of electrons in graphene with minimal impurities can be depicted as a hydrodynamic flow of charges. In this new regime, the well-known rules of Ohmic transport based on a single elec… ▽ More Hydrodynamic transport effectively describes the collective dynamics of fluids with well-defined thermodynamic quantities. With enhanced electron-electron interactions at elevated temperatures, the collective behavior of electrons in graphene with minimal impurities can be depicted as a hydrodynamic flow of charges. In this new regime, the well-known rules of Ohmic transport based on a single electron picture no longer apply, necessitating the consideration of collective electron dynamics. In particular, the hydrodynamic analogues of Joule heating and thermal transport require consideration of the viscous motion of the electron fluid, which has a direct impact on energy dissipation and heat generation by the fluidic motion of charge. In this work, we probe graphene hydrodynamics with thermal transport and find two distinct, qualitative signatures: thermal conductivity suppression below the Wiedemann-Franz value and viscous heating leading to magnetically-induced redistribution of temperature. We find these two effects are coincident in temperature and density, providing robust qualitative signatures of hydrodynamics, despite arising from two distinct aspects of this new regime: microscopic momentum conservation due to electron-electron scattering, and geometry-dependent viscous dissipation. Our results mark the first observation of viscous electronic heating in an electron fluid, providing insight for thermal management in electronic hydrodynamic devices and offering a new methodology for identifying hydrodynamic states in other systems. △ Less

Submitted 23 June, 2024; v1 submitted 19 June, 2024; originally announced June 2024.

Comments: 36 pages, 9 figures, including supplementary information

Superfluid stiffness of twisted multilayer graphene superconductors

Authors: Abhishek Banerjee, Zeyu Hao, Mary Kreidel, Patrick Ledwith, Isabelle Phinney, Jeong Min Park, Andrew M. Zimmerman, Kenji Watanabe, Takashi Taniguchi, Robert M Westervelt, Pablo Jarillo-Herrero, Pavel A. Volkov, Ashvin Vishwanath, Kin Chung Fong, Philip Kim

Abstract: The robustness of the macroscopic quantum nature of a superconductor can be characterized by the superfluid stiffness, $ρ_s$, a quantity that describes the energy required to vary the phase of the macroscopic quantum wave function. In unconventional superconductors, such as cuprates, the low-temperature behavior of $ρ_s$ drastically differs from that of conventional superconductors due to quasipar… ▽ More The robustness of the macroscopic quantum nature of a superconductor can be characterized by the superfluid stiffness, $ρ_s$, a quantity that describes the energy required to vary the phase of the macroscopic quantum wave function. In unconventional superconductors, such as cuprates, the low-temperature behavior of $ρ_s$ drastically differs from that of conventional superconductors due to quasiparticle excitations from gapless points (nodes) in momentum space. Intensive research on the recently discovered magic-angle twisted graphene family has revealed, in addition to superconducting states, strongly correlated electronic states associated with spontaneously broken symmetries, inviting the study of $ρ_s$ to uncover the potentially unconventional nature of its superconductivity. Here we report the measurement of $ρ_s$ in magic-angle twisted trilayer graphene (TTG), revealing unconventional nodal-gap superconductivity. Utilizing radio-frequency reflectometry techniques to measure the kinetic inductive response of superconducting TTG coupled to a microwave resonator, we find a linear temperature dependence of $ρ_s$ at low temperatures and nonlinear Meissner effects in the current bias dependence, both indicating nodal structures in the superconducting order parameter. Furthermore, the do** dependence shows a linear correlation between the zero temperature $ρ_s$ and the superconducting transition temperature $T_c$, reminiscent of Uemura's relation in cuprates, suggesting phase-coherence-limited superconductivity. Our results provide strong evidence for nodal superconductivity in TTG and put strong constraints on the mechanisms of these graphene-based superconductors. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Kinetic Inductance, Quantum Geometry, and Superconductivity in Magic-Angle Twisted Bilayer Graphene

Authors: Miuko Tanaka, Joel Î-j. Wang, Thao H. Dinh, Daniel Rodan-Legrain, Sameia Zaman, Max Hays, Bharath Kannan, Aziza Almanakly, David K. Kim, Bethany M. Niedzielski, Kyle Serniak, Mollie E. Schwartz, Kenji Watanabe, Takashi Taniguchi, Jeffrey A. Grover, Terry P. Orlando, Simon Gustavsson, Pablo Jarillo-Herrero, William D. Oliver

Abstract: The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moiré systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness… ▽ More The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moiré systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness of superconducting MATBG via its kinetic inductance. We find the superfluid stiffness to be much larger than expected from conventional single-band Fermi liquid theory; rather, it aligns well with theory involving quantum geometric effects that are dominant at the magic angle. The temperature dependence of the superfluid stiffness exhibits a power-law behavior, which contraindicates an isotropic BCS model; instead, the extracted power-law exponents indicate an anisotropic superconducting gap, whether interpreted using the conventional anisotropic BCS model or a quantum geometric theory of flat-band superconductivity. Moreover, the quadratic dependence of the stiffness on both DC and microwave current is consistent with Ginzburg-Landau theory. Taken together, these findings strongly suggest a connection between quantum geometry, superfluid stiffness, and unconventional superconductivity in MATBG. Finally, the combined DC-microwave measurement platform used here is applicable to the investigation of other atomically thin superconductors. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Layer-dependent electromechanical response in twisted graphene moiré superlattices

Authors: Hanhao Zhang, Yuanhao Wei, Yuhao Li, Shengsheng Lin, Jiarui Wang, Takashi Taniguchi, Kenji Watanabe, Jiangyu Li, Yi Shi, Xinran Wang, Yan Shi, Zaiyao Fei

Abstract: The coupling of mechanical deformation and electrical stimuli at the nanoscale has been a subject of intense investigation in the realm of materials science. Recently, twisted van der Waals (vdW) materials have emerged as a platform to explore exotic quantum states. These states are intimately tied to the formation of moiré superlattices, which can be visualized directly exploiting the electromech… ▽ More The coupling of mechanical deformation and electrical stimuli at the nanoscale has been a subject of intense investigation in the realm of materials science. Recently, twisted van der Waals (vdW) materials have emerged as a platform to explore exotic quantum states. These states are intimately tied to the formation of moiré superlattices, which can be visualized directly exploiting the electromechanical response. However, the origin of the response, even in twisted bilayer graphene (tBLG), remains unsettled. Here, employing lateral piezoresponse force microscopy (LPFM), we investigate the electromechanical responses of marginally twisted graphene moiré superlattices with different layer thicknesses. We observe distinct LPFM amplitudes and spatial profiles in tBLG and twisted monolayer-bilayer graphene (tMBG), exhibiting effective in-plane piezoelectric coefficients of 0.05 pm/V and 0.35 pm/V, respectively. Force tuning experiments further underscore a marked divergence in their responses. The contrasting behaviors suggest different electromechanical couplings in tBLG and tMBG. In tBLG, the response near the domain walls is attributed to the flexoelectric effect, while in tMBG, the behaviors can be comprehended within the context of piezoelectric effect. Our results not only provide insights to electromechanical and corporative effects in twisted vdW materials with different stacking symmetries, but may also show their potential for engineering them at the nanoscale. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Interlayer Fermi polarons of excited exciton states in quantizing magnetic fields

Authors: Huiying Cui, Qianying Hu, Xuan Zhao, Liguo Ma, Feng **, Qingming Zhang, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak, Yongqing Li, Yang Xu

Abstract: The study of exciton-polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons fo… ▽ More The study of exciton-polarons has offered profound insights into the many-body interactions between bosonic excitations and their immersed Fermi sea within layered heterostructures. However, little is known about the properties of exciton polarons with interlayer interactions. Here through magneto-optical reflectance contrast measurements, we experimentally investigate interlayer Fermi polarons for 2s excitons in WSe$_2$/graphene heterostructures, where the excited exciton states (2s) in the WSe$_2$ layer are dressed by free charge carriers of the adjacent graphene layer in the Landau quantization regime. First, such a system enables an optical detection of integer and fractional quantum Hall states (e.g. $ν=\pm1/3$, $\pm$2/3) of monolayer graphene. Furthermore, we observe that the 2s state evolves into two distinct branches, denoted as attractive and repulsive polarons, when graphene is doped out of the incompressible quantum Hall gaps. Our work paves the way for the understanding of the excited composite quasiparticles and Bose-Fermi mixtures. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Comments: 21 pages, 4 figures, and supporting information

Journal ref: Nano Letters 24, 7077-7083 (2024)

Feedback-voltage driven chaos in three-terminal spin-torque oscillator

Authors: Tomohiro Taniguchi

Abstract: Recent observations of chaos in nanomagnet suggest a possibility of new spintronics applications such as random-number generator and neuromorphic computing. However, large amount of electric current and/or magnetic field are necessary for the excitation of chaos, which are unsuitable for energy-saving applications. Here, we propose an excitation of chaos in three-terminal spin-torque oscillator (S… ▽ More Recent observations of chaos in nanomagnet suggest a possibility of new spintronics applications such as random-number generator and neuromorphic computing. However, large amount of electric current and/or magnetic field are necessary for the excitation of chaos, which are unsuitable for energy-saving applications. Here, we propose an excitation of chaos in three-terminal spin-torque oscillator (STO). The driving force of the chaos is voltage-controlled magnetic anisotropy (VCMA) effect, which enables us to manipulate magnetization dynamics without spending electric current or magnetic field, and thus, energy efficient. In particular, we focus on the VCMA effect generated by feedback signal from the STO since feedback effect is known to be effective in exciting chaos in dynamical system. Solving the Landau-Lifshitz-Gilbert (LLG) equation numerically and applying temporal and statistical analyses to its solution, the existence of the chaotic and transient-chaotic magnetization dynamics driven by the feedback VCMA effect is identified. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Comments: 6 pages, 4 figures

Quantum Confined Luminescence in Two dimensions

Authors: Saiphaneendra Bachu, Fatimah Habis, Benjamin Huet, Steffi Y. Woo, Leixin Miao, Danielle Reifsnyder Hickey, Gwangwoo Kim, Nicholas Trainor, Kenji Watanabe, Takashi Taniguchi, Deep Jariwala, Joan M. Redwing, Yuanxi Wang, Mathieu Kociak, Luiz H. G. Tizei, Nasim Alem

Abstract: Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of va… ▽ More Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed in a scanning transmission electron microscope to unambiguously resolve localized light emission from 2D monolayer MoSe2 nanodots of varying sizes embedded in monolayer WSe2 matrix. We observed that the light emission strongly depends on the nanodot size wherein the emission is dominated by MoSe2 excitons in dots larger than 85 nm, and by MoSe2/WSe2 interface excitons below 50 nm. Interestingly, at extremely small dot sizes (< 10 nm), the electron energy levels in the nanodot become quantized, as demonstrated by a striking blue-shift in interface exciton emission, thus inducing quantum confined luminescence. These results establish controllable light emission from spatially confined 2D nanodots, which holds potential to be generalized to other 2D systems towards future nanophotonic applications. △ Less

Submitted 14 June, 2024; originally announced June 2024.

Comments: 40 pages total, 5 figures in main text and 12 figures in Supporting Information, submitted to Nature Materials as of 06/14/2024

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Authors: Fan Xu, Xumin Chang, Jiayong Xiao, Yixin Zhang, Feng Liu, Zheng Sun, Ning Mao, Nikolai Peshcherenko, Jiayi Li, Kenji Watanabe, Takashi Taniguchi, Bingbing Tong, Li Lu, **feng Jia, Dong Qian, Zhiwen Shi, Yang Zhang, Xiaoxue Liu, Shengwei Jiang, Tingxin Li

Abstract: Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system… ▽ More Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that reported the evidence of the integer and fractional quantum spin Hall effects in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.5, nonmonotonic temperature dependence of resistivity and large out-of-plane negative magnetoresistance have been observed, which likely arises from the frustrated liquid-like ground state and weak effective Ruderman-Kittel-Kasuya-Yosida interactions. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Xiao-Wei Zhang, Xiaoyu Liu, William Holtzmann, Weijie Li, Chong Wang, Chaowei Hu, Yuzhou Zhao, Takashi Taniguchi, Kenji Watanabe, Jihui Yang, David Cobden, Jiun-Haw Chu, Nicolas Regnault, B. Andrei Bernevig, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abe… ▽ More The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abelian anyons, one route is to engineer higher flat Chern bands that mimic higher LLs. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayer (tMoTe2). Around filling factor v = -3, i.e., half-filling of the second miniband, we uncover spontaneous ferromagnetism and an incipient Chern insulator state. By measuring the anomalous Hall effect as a function of twist angle, we find that the Chern numbers (C) of the top two moiré flat bands have opposite sign (C = -+1) at twist angles above 3.1° but the same sign (C = -1) around 2.6°. This observation is consistent with the recently predicted twist-angle dependent band topology, resulting from the competition between moiré ferroelectricity and piezoelectricity. As we increase the magnetic field, only the small twist-angle device (2.6°) experiences a topological phase transition with an emergent C = -2 state. This is attributed to a Zeeman field-induced band crossing between opposite valleys, with the determined C = -1 for the top two bands. Our results lay a firm foundation for understanding the higher flat Chern bands, which is essential for the prediction or discovery of non-Abelian FCIs. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Quantitative determination of twist angle and strain in Van der Waals moiré superlattices

Authors: Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar, Joe Finney, Aaron L. Sharpe, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon

Abstract: Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezo… ▽ More Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001° and uniaxial heterostrain with uncertainty on the order of 0.002%. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 20 pages including supplementary material and 3 main figures

Chaotic magnetization dynamics driven by feedback magnetic field

Authors: Tomohiro Taniguchi

Abstract: An excitation of highly nonlinear, complex magnetization dynamics in a ferromagnet, for example chaos, is a new research target in spintronics. This technology is applied to practical applications such as random number generator and information processing systems. One way to induce complex dynamics is applying feedback effect to the ferromagnet. The role of the feedback electric current on the mag… ▽ More An excitation of highly nonlinear, complex magnetization dynamics in a ferromagnet, for example chaos, is a new research target in spintronics. This technology is applied to practical applications such as random number generator and information processing systems. One way to induce complex dynamics is applying feedback effect to the ferromagnet. The role of the feedback electric current on the magnetization dynamics was studied in the past. However, there is another way to apply feedback effect to the ferromagnet, namely feedback magnetic field. In this paper, we developed both numerical and theoretical analyses on the role of the feedback magnetic field causing complex magnetization dynamics. The numerical simulation indicates the change of the dynamical behavior from a simple oscillation with a unique frequency to complex dynamics such as amplitude modulation and chaos. The theoretical analyses on the equation of motion qualitatively explain several features found in the numerical simulations, exemplified as an appearance of multipeak structure in the Fourier spectra. The difference of the role of the feedback electric current and magnetic field is also revealed from the theoretical analyses. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 109, 214412 (2024)

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Authors: Alex Boschi, Zewdu M. Gebeyehu, Sergey Slizovskiy, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Kenji Watanabe, Takashi Taniguchi, Fabio Beltram, Vladimir I. Fal'ko, Camilla Coletti, Sergio Pezzini

Abstract: Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t… ▽ More Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 23 pages, 4 figures and supporting information

Ultrafast Optical Control of Rashba Interactions in a TMDC Heterostructure

Authors: Henry Mittenzwey, Abhijeet Kumar, Raghav Dhingra, Kenji Watanabe, Takashi Taniguchi, Cornelius Gahl, Kirill I. Bolotin, Malte Selig, Andreas Knorr

Abstract: We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude o… ▽ More We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer excitons inducing a phonon-assisted intravalley spin relaxation. We develop a theoretical description based on a microscopic approach to quantify the magnitude of Rashba interactions and test these predictions via time-resolved Kerr rotation measurements. In agreement with the calculations, we find that the Rashba-induced intravalley spin mixing becomes the dominating spin relaxation channel above T = 50 K. Our work identifies a previously unexplored spin-depolarization channel in heterostructures which can be used for ultrafast spin manipulation. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Superconductivity in twisted bilayer WSe$_2$

Authors: Yinjie Guo, Jordan Pack, Joshua Swann, Luke Holtzman, Matthew Cothrine, Kenji Watanabe, Takashi Taniguchi, David Mandrus, Katayun Barmak, James Hone, Andrew J. Millis, Abhay N. Pasupathy, Cory R. Dean

Abstract: The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other… ▽ More The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Correlated states controlled by tunable van Hove singularity in moiré WSe2

Authors: Patrick Knüppel, Jiacheng Zhu, Yiyu Xia, Zhengchao Xia, Zhongdong Han, Yihang Zeng, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak

Abstract: Twisted bilayers of transition metal dichalcogenide (TMD) semiconductors have emerged as a highly tunable system for the studies of correlated and topological states of matter, such as superconductivity, ferromagnetism, correlated insulators, and topological and Chern insulators. However, the connection between these symmetry-breaking ground states and the underlying band structure singularity in… ▽ More Twisted bilayers of transition metal dichalcogenide (TMD) semiconductors have emerged as a highly tunable system for the studies of correlated and topological states of matter, such as superconductivity, ferromagnetism, correlated insulators, and topological and Chern insulators. However, the connection between these symmetry-breaking ground states and the underlying band structure singularity in these materials remains largely unexplored. Here, by combining exciton sensing and magnetic circular dichroism (MCD) measurements, we demonstrate how the magnetic properties and the correlated insulating states are controlled by the gate tunable van Hove singularity (VHS) in the band structure of twisted bilayer WSe2 (tWSe2). In particular, we demonstrate how the location of the VHS in the tWSe2 band structure can influence 1) the stability of Stoner ferromagnetism, 2) the valley polarizability and the stability of Chern insulators, as well as 3) the layer polarizability and the associated metal-insulator transition. The results are supported by continuum model band structure calculations. Our work highlights an important ingredient for understanding the electronic phase diagram in twisted bilayer TMDs. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Versatile polymer method to dry-flip two-dimensional moiré hetero structures for nanoscale surface characterization

Authors: Roop Kumar Mech, Jean Spièce, Kenji Watanabe, Takashi Taniguchi, Pascal Gehring

Abstract: The recent discovery of magic angle twisted bilayer graphene (MATBG), in which two sheets of monolayer graphene are precisely stacked to a specific angle, has opened up a plethora of new opportunities in the field of topology, superconductivity, and other strongly correlated effects. Most conventional ways of preparing twisted bilayer devices require the use of high process temperatures and solven… ▽ More The recent discovery of magic angle twisted bilayer graphene (MATBG), in which two sheets of monolayer graphene are precisely stacked to a specific angle, has opened up a plethora of new opportunities in the field of topology, superconductivity, and other strongly correlated effects. Most conventional ways of preparing twisted bilayer devices require the use of high process temperatures and solvents and are not well-suited for preparing samples which need to be flipped to be compatible with characterization techniques like STM, ARPES, PFM, SThM etc. Here, we demonstrate a very simple polymer-based method using Polyvinyl Chloride (PVC), which can be used for making flipped twisted bilayer graphene devices. This allowed us to produce flipped twisted samples without the need of any solvents and with high quality as confirmed by Piezoresponse Force Microscopy. We believe that this dry flip technique can be readily extended to twist 2D materials beyond graphene, especially air-sensitive materials which require operation under inert atmosphere, where often solvents cannot be used. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Nature of long-lived moiré interlayer excitons in electrically tunable MoS$_{2}$/MoSe$_{2}$ heterobilayers

Authors: Evgeny M. Alexeev, Carola M. Purser, Carmem M. Gilardoni, James Kerfoot, Hao Chen, Alisson R. Cadore, Bárbara L. T. Rosa, Matthew S. G. Feuer, Evans Javary, Patrick Hays, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Dhiren M. Kara, Mete Atatüre, Andrea C. Ferrari

Abstract: Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-spa… ▽ More Interlayer excitons in transition-metal dichalcogenide heterobilayers combine high binding energy and valley-contrasting physics with long optical lifetime and strong dipolar character. Their permanent electric dipole enables electric-field control of emission energy, lifetime, and location. Device material and geometry impacts the nature of the interlayer excitons via their real- and momentum-space configurations. Here, we show that interlayer excitons in MoS$_{2}$/MoSe$_{2}$ heterobilayers are formed by charge carriers residing at the Brillouin zone edges, with negligible interlayer hybridization. We find that the moiré superlattice leads to the reversal of the valley-dependent optical selection rules, yielding a positively valued g-factor and cross-polarized photoluminescence. Time-resolved photoluminescence measurements reveal that the interlayer exciton population retains the optically induced valley polarization throughout its microsecond-long lifetime. The combination of long optical lifetime and valley polarization retention makes MoS$_{2}$/MoSe$_{2}$ heterobilayers a promising platform for studying fundamental bosonic interactions and develo** excitonic circuits for optical information processing. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Superconducting magic-angle twisted trilayer graphene hosts competing magnetic order and moiré inhomogeneities

Authors: Ayshi Mukherjee, Surat Layek, Subhajit Sinha, Ritajit Kundu, Alisha H. Marchawala, Mahesh Hingankar, Joydip Sarkar, L. D. Varma Sangani, Heena Agarwal, Sanat Ghosh, Aya Batoul Tazi, Kenji Watanabe, Takashi Taniguchi, Abhay N. Pasupathy, Arijit Kundu, Mandar M. Deshmukh

Abstract: The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evid… ▽ More The microscopic mechanism of superconductivity in the magic-angle twisted graphene family, including magic-angle twisted trilayer graphene (MATTG), is poorly understood. Properties of MATTG, like Pauli limit violation, suggest unconventional superconductivity. Theoretical studies propose proximal magnetic states in the phase diagram, but direct experimental evidence is lacking. We show direct evidence for an in-plane magnetic order proximal to the superconducting state using two complementary electrical transport measurements. First, we probe the superconducting phase by using statistically significant switching events from superconducting to the dissipative state of MATTG. The system behaves like a network of Josephson junctions due to lattice relaxation-induced moiré inhomogeneity in the system. We observe non-monotonic and hysteretic responses in the switching distributions as a function of temperature and in-plane magnetic field. Second, in normal regions doped slightly away from the superconducting regime, we observe hysteresis in magnetoresistance with an in-plane magnetic field; showing evidence for in-plane magnetic order that vanishes $\sim$900 mK. Additionally, we show a broadened Berezinskii-Kosterlitz-Thouless transition due to relaxation-induced moiré inhomogeneity. We find superfluid stiffness $J_{\mathrm{s}}$$\sim$0.15 K with strong temperature dependence. Theoretically, the magnetic and superconducting order arising from the magnetic order's fluctuations have been proposed - we show direct evidence for both. Our observation that the hysteretic magnetoresistance is sensitive to the in-plane field may constrain possible intervalley-coherent magnetic orders and the resulting superconductivity that arises from its fluctuations. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 22 pages, 8 figures, and supplementary information

Electromechanical response of saddle points in twisted hBN moiré superlattices

Authors: Stefano Chiodini, Giacomo Venturi, James Kerfoot, **can Zhang, Evgeny M. Alexeev, Takashi Taniguchi, Kenji Watanabe, Andrea C. Ferrari, Antonio Ambrosio

Abstract: In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental inve… ▽ More In twisted layered materials (t-LMs), an inter-layer rotation can break inversion symmetry and create an interfacial array of staggered out-of-plane polarization due to AB/BA stacking registries. This symmetry breaking can also trigger the formation of edge in-plane polarizations localized along the perimeter of AB/BA regions (i.e., saddle point domains). However, a comprehensive experimental investigation of these features is still lacking. Here, we use piezo force microscopy to probe the electromechanical behavior of twisted hexagonal boron nitride (t-hBN). For a parallel stacking alignment of t-hBN, we reveal very narrow (width ~ 20 nm) saddle point polarizations, which we also measure in the anti-parallel configuration. These localized polarizations can still be found on a multiply-stacked t-hBN structure, determining the formation of a double moiré. We also visualize a t-hBN moiré superlattice in the topography maps with atomic force microscopy, related to the strain accumulated at the saddle point domains. Our findings imply that polarizations in t-hBN do not only point in the out-of-plane direction, but also show an in-plane component, giving rise to a much more complex 3D polarization field. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Brightened emission of dark trions in transition-metal dichalcogenide monolayers

Authors: V. **dal, K. Mourzidis, A. Balocchi, C. Robert, P. Li, D. Van Tuan, L. Lombez, D. Lagarde, P. Renucci, T. Taniguchi, K. Watanabe, H. Dery, X. Marie

Abstract: The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions.… ▽ More The optical emission spectra of semiconducting transition-metal dichalcogenide monolayers highlight fascinating recombination processes of charged excitons (trions). When charge tunable WSe2 monolayers are moderately doped with electrons, a strong luminescence peak emerges just below the well-understood spectral lines associated with the recombination of negatively charged bright and dark trions. Despite previous investigations, its origin remains elusive. Here, we demonstrate that this luminescence peak is the result of electron-electron assisted recombination that brightens the dark trion emission. Supporting evidence for this second-order recombination process comes from identifying the equivalent brightened emission of positively charged dark trions when the monolayer is electrostatically doped with holes. Remarkably, the discovered hole-hole assisted luminescence peak emerges in the near infrared, about 500 meV below the well-studied spectral region of excitons and trions. In addition to identifying new recombination channels of these excitonic complexes, our findings accurately determine the spin-split energies of the conduction and valence bands. Both of which play crucial roles in understanding the optical properties of WSe2 based homo- and hetero-structures. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 13 pages, 4 figures

Improved Three-Dimensional Reconstructions in Electron Ptychography through Defocus Series Measurements

Authors: Marcel Schloz, Thomas C. Pekin, Hamish G. Brown, Dana O. Byrne, Bryan D. Esser, Emmanuel Terzoudis-Lumsden, Takashi Taniguchi, Kenji Watanabe, Scott D. Findlay, Benedikt Haas, Jim Ciston, Christoph T. Koch

Abstract: A detailed analysis of ptychography for 3D phase reconstructions of thick specimens is performed. We introduce multi-focus ptychography, which incorporates a 4D-STEM defocus series to enhance the quality of 3D reconstructions along the beam direction through a higher overdetermination ratio. This method is compared with established multi-slice ptychography techniques, such as conventional ptychogr… ▽ More A detailed analysis of ptychography for 3D phase reconstructions of thick specimens is performed. We introduce multi-focus ptychography, which incorporates a 4D-STEM defocus series to enhance the quality of 3D reconstructions along the beam direction through a higher overdetermination ratio. This method is compared with established multi-slice ptychography techniques, such as conventional ptychography, regularized ptychography, and multi-mode ptychography. Additionally, we contrast multi-focus ptychography with an alternative method that uses virtual optical sectioning through a reconstructed scattering matrix ($\mathcal{S}$-matrix), which offers more precise 3D structure information compared to conventional ptychography. Our findings from multiple 3D reconstructions based on simulated and experimental data demonstrate that multi-focus ptychography surpasses other techniques, particularly in accurately reconstructing the surfaces and interface regions of thick specimens. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Thermal properties of the superconductor-quantum Hall interfaces

Authors: Lingfei Zhao, Trevyn F. Q. Larson, Zubair Iftikhar, John Chiles, Kenji Watanabe, Takashi Taniguchi, Francois Amet, Gleb Finkelstein

Abstract: An important route of engineering topological states and excitations is to combine superconductors (SC) with the quantum Hall (QH) effect, and over the past decade, significant progress has been made in this direction. While typical measurements of these states focus on electronic properties, little attention has been paid to the accompanying thermal responses. Here, we examine the thermal propert… ▽ More An important route of engineering topological states and excitations is to combine superconductors (SC) with the quantum Hall (QH) effect, and over the past decade, significant progress has been made in this direction. While typical measurements of these states focus on electronic properties, little attention has been paid to the accompanying thermal responses. Here, we examine the thermal properties of the interface between a type-II superconducting electrodes and graphene in the QH regime. We use the thermal noise measurement to probe the local electron temperature of the biased interface. Surprisingly, the measured temperature raise indicates that the superconductor provides a significant thermal conductivity, which is linear in temperature. This suggests electronic heat transport and may be unexpected, because the number of the quasiparticles in the superconductor should be exponentially suppressed. Instead, we attribute the measured electronic heat conductivity to the overlap of the normal states in the vortex cores. △ Less

Submitted 2 June, 2024; originally announced June 2024.

Comments: Lingfei Zhao, Trevyn F.Q. Larson and Zubair Iftikhar contributed equally to this work

Sub-wavelength optical lattice in 2D materials

Authors: Supratik Sarkar, Mahmoud Jalali Mehrabad, Daniel G. Suárez-Forero, Liuxin Gu, Christopher J. Flower, Lida Xu, Kenji Watanabe, Takashi Taniguchi, Suji Park, Houk Jang, You Zhou, Mohammad Hafezi

Abstract: Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges usi… ▽ More Recently, light-matter interaction has been vastly expanded as a control tool for inducing and enhancing many emergent non-equilibrium phenomena. However, conventional schemes for exploring such light-induced phenomena rely on uniform and diffraction-limited free-space optics, which limits the spatial resolution and the efficiency of light-matter interaction. Here, we overcome these challenges using metasurface plasmon polaritons (MPPs) to form a sub-wavelength optical lattice. Specifically, we report a ``nonlocal" pump-probe scheme where MPPs are excited to induce a spatially modulated AC Stark shift for excitons in a monolayer of MoSe$_2$, several microns away from the illumination spot. Remarkably, we identify nearly two orders of magnitude reduction for the required modulation power compared to the free-space optical illumination counterpart. Moreover, we demonstrate a broadening of the excitons' linewidth as a robust signature of MPP-induced periodic sub-diffraction modulation. Our results open new avenues for exploring power-efficient light-induced lattice phenomena below the diffraction limit in active chip-compatible MPP architectures. △ Less

Submitted 1 June, 2024; originally announced June 2024.

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

Authors: Joon Young Park, Young Jae Shin, Jeacheol Shin, Jehyun Kim, Janghyun Jo, Hyobin Yoo, Danial Haei, Chohee Hyun, Jiyoung Yun, Robert M. Huber, Arijit Gupta, Kenji Watanabe, Takashi Taniguchi, Wan Kyu Park, Hyeon Suk Shin, Miyoung Kim, Dohun Kim, Gyu-Chul Yi, Philip Kim

Abstract: Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materi… ▽ More Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 24 pages, 4 main figures, 7 extended data figures

Coulomb drag in graphene/hBN/graphene moiré heterostructures

Authors: Yueyang Wang, Hongxia Xue, Xiong Wang, Kenji Watanabe, Takashi Taniguchi, Dong-Keun Ki

Abstract: We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moiré heterostructure with a moiré wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning carrier densities of each graphene layer independently, we find that the charge carriers in moiré mini-bands, i.e., near the satellite Dirac point (sDP), can be coupled… ▽ More We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moiré heterostructure with a moiré wavelength of $\sim$14 nm and an intrinsic graphene with a lattice constant of $\sim$0.25 nm. By tuning carrier densities of each graphene layer independently, we find that the charge carriers in moiré mini-bands, i.e., near the satellite Dirac point (sDP), can be coupled with the massless Fermions near the original Dirac point (oDP), strongly enough to generate a finite drag resistivity. At high temperature ($T$) and large density ($n$), the drag resistivities near both oDP and sDP follow a typical $n^{-α}$ ($α=1.3\sim1.7$) and $T^2$ power law dependence as expected for the momentum transfer process and it also satisfies the layer reciprocity. In contrast, at low $T$, the layer reciprocity is broken in both oDP-oDP and sDP-oDP coupled regions that suggest dominant energy drag. Furthermore, quantitatively, the drag resistivities near sDPs are smaller than those near oDP and they deviate from $T^2$ dependence below $\sim$100 K. These results suggest that the coupling between the carriers in moiré mini-bands and those in original Dirac bands may not be of a simple Fermi liquid nature. △ Less

Submitted 21 June, 2024; v1 submitted 30 May, 2024; originally announced May 2024.

Comments: 11 pages, 7 figures

Quarter- and half-filled quantum Hall states and their competing interactions in bilayer graphene

Authors: Ravi Kumar, André Haug, Jehyun Kim, Misha Yutushui, Konstantin Khudiakov, Vishal Bhardwaj, Alexey Ilin, Kenji Watanabe, Takashi Taniguchi, David F. Mross, Yuval Ronen

Abstract: Bilayer graphene has emerged as a key platform for studying non-Abelian fractional quantum Hall (FQH) states. Its multiple half-filled plateaus with large energy gaps combined with its tunability offer an opportunity to distill the principles that determine their topological order. Here, we report four additional plateaus at $ν=\frac{1}{2}$ for different spin and valley, revealing a systematic pat… ▽ More Bilayer graphene has emerged as a key platform for studying non-Abelian fractional quantum Hall (FQH) states. Its multiple half-filled plateaus with large energy gaps combined with its tunability offer an opportunity to distill the principles that determine their topological order. Here, we report four additional plateaus at $ν=\frac{1}{2}$ for different spin and valley, revealing a systematic pattern of non-Abelian states according to their Levin--Halperin daughter states. Whenever a pair of $N=1$ Landau levels cross, anti-Pfaffian and Pfaffian develop at half filling of the lower and higher levels, respectively. In the $N=0$ levels, where half-filled plateaus are absent, we instead observe four unexpected incompressible quarter-filled states along with daughters. The mutual exclusion of half- and quarter-filled states indicates a robust competition between the interactions favoring either paired states of two-flux or four-flux composite fermions. Finally, we observe several FQH states that require strong interactions between composite fermions. Our combined findings herald a new generation of quantum Hall physics in graphene-based heterostructures. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 17 pages, 5 figures

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

Authors: Ellis Thompson, Keng Tou Chu, Florie Mesple, Xiao-Wei Zhang, Chaowei Hu, Yuzhou Zhao, Heonjoon Park, Jiaqi Cai, Eric Anderson, Kenji Watanabe, Takashi Taniguchi, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav… ▽ More In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, Extended Data, 9 figures, Supplementary Information, 8 pages, 5 figures

Ultraclean carbon nanotube-based Josephson junctions

Authors: S. Annabi, E. Arrighi, A. Peugeot, H. Riechert, J. Griesmar, K. Watanabe, T. Taniguchi, L. Bretheau, J. -D. Pillet

Abstract: We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrod… ▽ More We present a technique for integrating ultraclean carbon nanotubes into superconducting circuits, aiming to realize Josephson junctions based on one-dimensional elementary quantum conductors. This technique primarily involves depositing the nanotube in the final step, thus preserving it from the inherent contaminations of nanofabrication and maintaining contact solely with superconducting electrodes and a crystalline hBN substrate. Through transport measurements performed in both the normal and superconducting states, we demonstrate that our method yields high-quality junctions with Josephson energies suitable for quantum device applications, such as carbon nanotube-based superconducting qubits. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Authors: Rupini V. Kamat, Aaron L. Sharpe, Mihir Pendharkar, Jenny Hu, Steven J. Tran, Gregory Zaborski Jr., Marisa Hocking, Joe Finney, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, Tony Heinz, David Goldhaber-Gordon

Abstract: The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital fe… ▽ More The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 40 pages, 15 figures

Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

Authors: Shaili Sett, Rahul Debnath, Arup Singha, Shinjan Mandal, Jyothsna K, Monika Bhakar, Kenji Watanabe, Takashi Taniguchi, Varun Raghunathan, Goutam Sheet, Manish Jain, Arindam Ghosh

Abstract: At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hyster… ▽ More At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 16 pages, 15 figures

Stoner instabilities and Ising excitonic states in twisted transition metal dichalcogenides

Authors: Augusto Ghiotto, LingNan Wei, Larry Song, Jiawei Zang, Aya Batoul Tazi, Daniel Ostrom, Kenji Watanabe, Takashi Taniguchi, James C. Hone, Daniel A. Rhodes, Andrew J. Millis, Cory R. Dean, Lei Wang, Abhay N. Pasupathy

Abstract: Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated ele… ▽ More Moiré transition metal dichalcogenide (TMD) systems provide a tunable platform for studying electron-correlation driven quantum phases. Such phases have so far been found at rational fillings of the moiré superlattice, and it is believed that lattice commensurability plays a key role in their stability. In this work, we show via magnetotransport measurements on twisted WSe2 that new correlated electronic phases can exist away from commensurability. The first phase is an antiferromagnetic metal that is driven by proximity to the van Hove singularity. The second is a re-entrant magnetic field-driven insulator. This insulator is formed from a small and equal density of electrons and holes with opposite spin projections - an Ising excitonic insulator. △ Less

Submitted 27 May, 2024; originally announced May 2024.

Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle

Authors: Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Kimberly Hsieh, Paulina Majchrzak, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Jill A. Miwa, Yong P. Chen, Jeil Jung, Søren Ulstrup

Abstract: Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Co… ▽ More Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Coulomb interactions, yet a comprehensive understanding is lacking. This is primarily because the relevant low-energy band structure is believed to strongly change in a non-trivial way as the electron filling is varied. Here we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The do** dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena. △ Less

Submitted 27 May, 2024; originally announced May 2024.

Comments: 25 pages, 4 main figures and 7 supplementary figures

Even- and Odd-denominator Fractional Quantum Anomalous Hall Effect in Graphene Moire Superlattices

Authors: Jian Xie, Zihao Huo, Xin Lu, Zuo Feng, Zaizhe Zhang, Wenxuan Wang, Qiu Yang, Kenji Watanabe, Takashi Taniguchi, Kaihui Liu, Zhida Song, X. C. Xie, Jianpeng Liu, Xiaobo Lu

Abstract: Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire su… ▽ More Fractional quantum anomalous hall effect (FQAHE), a transport effect with fractionally quantized Hall plateau emerging under zero magnetic field, provides a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FQAHE has been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices showing both fractional and integer quantum anomalous Hall effects when the lowest flat Chern band is fractionally and fully filled at zero magnetic field. The zero-field Hall resistance Rho_xy = h/Ce2 is quantized to values corresponding to C = 3/5, 2/3, 5/7, 3/4, 7/9 and 1 at moire filling factors v = 3/5, 2/3, 5/7, 3/4, 7/9 and 1, respectively. Particularly, the C = 3/4 FQAHE state at v = 3/4 moire filling featuring a minimum of longitudinal resistance Rho_xx and fractionally quantized Hall resistance Rho_xy = 4h/3e2, is observed for the first time under zero magnetic field. Such a state may be similar to the C = 3/4 fractional quantum hall (FQHE) state recently observed at high magnetic fields9,10 and possibly host fractional charge excitations obeying non-Abelian statistics. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a sign reversal of the Hall resistivity for v = 2/3 state, indicating a transition from quasi-electron-like excitations to quasi-hole ones. Our experiment has established RHG/hBN moire superlattices a promising platform to explore quasi-particles with fractional charge excitations and non-Abelian anyons at zero magnetic field. △ Less

Submitted 27 May, 2024; originally announced May 2024.

Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures

Authors: Xinyue Huang, Zhigang Song, Yuchen Gao, **fan Gu, Kenji Watanabe, Takashi Taniguchi, Shiqi Yang, Zuxin Chen, Yu Ye

Abstract: We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$… ▽ More We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in sha** excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices. △ Less

Submitted 25 May, 2024; originally announced May 2024.

Comments: 9 pages, 4 figures

Charge pum** in hBN-encapsulated graphene driven by surface acoustic waves

Authors: Dublin M. Nichols, Jameson G. Berg, Takashi Taniguchi, Kenji Watanabe, Pallavi Dhagat, Vikram Deshpande, Albrecht Jander, Ethan Davis Minot

Abstract: Surface acoustic waves (SAWs) on piezoelectric insulators can generate dynamic periodic potentials inside one-dimensional and two-dimensional materials. These periodic potentials have been utilized or proposed for various applications, including acoustoelectric charge pum**. In this study, we investigate acoustoelectric charge pum** in graphene with very low electrostatic disorder. By employin… ▽ More Surface acoustic waves (SAWs) on piezoelectric insulators can generate dynamic periodic potentials inside one-dimensional and two-dimensional materials. These periodic potentials have been utilized or proposed for various applications, including acoustoelectric charge pum**. In this study, we investigate acoustoelectric charge pum** in graphene with very low electrostatic disorder. By employing a graphite top gate on boron-nitride-encapsulated graphene, we adjust the graphene carrier concentration over a broad range, enabling us to examine the acoustoelectric signal in both mixed-carrier and single-carrier regimes. We discuss the benefits of hBN-encapsulated graphene for charge pum** applications and introduce a model that describes the acoustoelectric signal across all carrier concentrations, including at the charge neutrality point. This quantitative model will support future SAW-enabled explorations of phenomena in low-dimensional materials and guide the design of novel SAW sensors. △ Less

Submitted 24 May, 2024; originally announced May 2024.

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Authors: Wenxuan Wang, Gengdong Zhou, Wenlu Lin, Zuo Feng, Yijie Wang, Miao Liang, Zaizhe Zhang, Min Wu, Le Liu, Kenji Watanabe, Takashi Taniguchi, Wei Yang, Guangyu Zhang, Kaihui Liu, **hua Gao, Yang Liu, X. C. Xie, Zhida Song, Xiaobo Lu

Abstract: Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition… ▽ More Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moiré structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moiré fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moiré fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moiré translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moiré unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moiré electronics. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Imaging topological polar structures in marginally twisted 2D semiconductors

Authors: Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella, Md Hemayet Uddin, Kaijian Xing, Weiyao Zhao, Seng Huat Lee, Zhiqiang Mao, Jack B. Muir, Linnan Jia, Jeffrey A. Davis, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam, Pankaj Sharma, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-o… ▽ More Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Unconventional superconductivity in twisted bilayer WSe2

Authors: Yiyu Xia, Zhongdong Han, Kenji Watanabe, Takashi Taniguchi, Jie Shan, Kin Fai Mak

Abstract: Moiré materials have enabled the realization of flat electron bands and quantum phases that are driven by strong correlations associated with flat bands. Superconductivity has been observed, but solely, in graphene moiré materials. The absence of robust superconductivity in moiré materials beyond graphene, such as semiconductor moiré materials, has remained a mystery and challenged our current und… ▽ More Moiré materials have enabled the realization of flat electron bands and quantum phases that are driven by strong correlations associated with flat bands. Superconductivity has been observed, but solely, in graphene moiré materials. The absence of robust superconductivity in moiré materials beyond graphene, such as semiconductor moiré materials, has remained a mystery and challenged our current understanding of superconductivity in flat bands. Here, we report the observation of robust superconductivity in 3.65-degree twisted bilayer WSe2 which hosts a honeycomb moiré lattice. Superconductivity emerges at half-band filling and under small sublattice potential differences, where the moiré band is a flat Chern band. The optimal superconducting transition temperature is about 220 mK and constitutes 2% of the effective Fermi temperature; the latter is comparable to the value in high-temperature cuprate superconductors and suggests strong pairing. The superconductor borders on two distinct metals below and above half-band filling; it undergoes a continuous transition to a correlated insulator by tuning the sublattice potential difference. The observed superconductivity on the verge of Coulomb-induced charge localization suggests roots in strong electron correlations. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Comments: 24 pages + 12 figures

Direct measurement of a $\sin(2\varphi)$ current phase relation in a graphene superconducting quantum interference device

Authors: Simon Messelot, Nicolas Aparicio, Elie de Seze, Eric Eyraud, Johann Coraux, Kenji Watanabe, Takashi Taniguchi, Julien Renard

Abstract: In a Josephson junction, the current phase relation relates the phase variation of the superconducting order parameter, $\varphi$, between the two superconducting leads connected through a weak link, to the dissipationless current . This relation is the fingerprint of the junction. It is usually dominated by a $\sin(\varphi)$ harmonic, however its precise knowledge is necessary to design supercond… ▽ More In a Josephson junction, the current phase relation relates the phase variation of the superconducting order parameter, $\varphi$, between the two superconducting leads connected through a weak link, to the dissipationless current . This relation is the fingerprint of the junction. It is usually dominated by a $\sin(\varphi)$ harmonic, however its precise knowledge is necessary to design superconducting quantum circuits with tailored properties. Here, we directly measure the current phase relation of a superconducting quantum interference device made with gate-tunable graphene Josephson junctions and we show that it can behave as a $\sin(2\varphi)$ Josephson element, free of the traditionally dominant $\sin(\varphi)$ harmonic. Such element will be instrumental for the development of superconducting quantum bits protected from decoherence. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Comments: 15 pages, 3 figures, Supplemental Material in Ancillary files