Showing 1–50 of 260 results for author: Tang, C

Orbital origin of magnetic moment enhancement induced by charge density wave in kagome FeGe

Authors: Shulun Han, Linyang Li, Chi Sin Tang, Qi Wang, Lingfeng Zhang, Caozheng Diao, Mingwen Zhao, Shuo Sun, Lijun Tian, Mark B. H. Breese, Chuanbing Cai, Milorad V. Milosevic, Yanpeng Qi, Andrew T. S. Wee, Xinmao Yin

Abstract: Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and… ▽ More Interactions among various electronic states such as CDW, magnetism, and superconductivity are of high significance in strongly correlated systems. While significant progress has been made in understanding the relationship between CDW and superconductivity, the interplay between CDW and magnetic order remains largely elusive. Kagome lattices, which intertwine nontrivial topology, charge order, and magnetism, offer an ideal platform for such studies. The kagome magnet FeGe, hosting the unique coupling between CDW and magnetism, has recently garnered considerable attention in that respect. Here we reveal the significant role of the orbital coupling effect during the CDW phase transition, highlighting the orbital origin of the magnetic moment enhancement in FeGe. Our X ray absorption experiments and first principles calculations illuminate the temperature dependent behavior of Fe3d_Ge4p orbital hybridization and corroborate its pivotal impact on the magnetic properties of FeGe. These findings introduce an orbital dimension to the correlation between charge and magnetic degrees of freedom, advancing our understanding of the intriguing quantum phases resulting from this interplay. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Unraveling Anisotropic Hybridizations of Solid-state Electrolyte Nano-films in Li-ion Batteries

Authors: Yuanjie Ning, Wenjun Wu, Liang Dai, Shuo Sun, Zhigang Zeng, Dengsong Zhang, Mark B. H. Breese, Chuanbing Cai, Chi Sin Tang, Xinmao Yin

Abstract: Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems,… ▽ More Li2WO4 (LWO) is recognized for its potential as a solid-state electrolyte and it has demonstrated the ability to enhance the electrochemical performance of LiCoO2 (LCO) cathodes in Li-ion batteries. However, prior investigations into LWO have predominantly involved polycrystalline structures, thereby lacking a comprehensive understanding of its behavior when interfaced with single crystal systems, particularly those intricately connected to LCO. In this study, we employ pulsed laser deposition (PLD) to epitaxially synthesize LWO nano-films on LCO layers with different orientations. Based on a series of high-resolution synchrotron-based techniques including X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS), the electronic structure of LWO is carefully scrutinized where a higher main energy level of W5d(eg)-O2p orbitals hybridization in LWO/LCO(104) as compared to LWO/LCO(003) has been observed. This experimental finding is further validated by a comprehensive set of density of states calculations. Furthermore, detailed polarized XAS characterization unveils distinct anisotropy between the two oriented LWO configurations. This comprehensive scientific investigation, harnessing the capabilities of synchrotron-based techniques, provides invaluable insights for future studies, offering guidance for the optimized utilization of LWO as a solid-state electrolyte or modification layer for LCO cathodes in high-powered Li-ion batteries. △ Less

Submitted 12 May, 2024; originally announced May 2024.

Comments: 8 pages, 5 figures

Tunable Collective Excitations in Epitaxial Perovskite Nickelates

Authors: Mengxia Sun, Xu He, Mingyao Chen, Chi Sin Tang, Xiongfang Liu, Liang Dai, Jishan Liu, Zhigang Zeng, Shuo Sun, Mark B. H. Breese, Chuanbing Cai, Yingge Du, Le Wang, Andrew T. S. Wee, Xinmao Yin

Abstract: The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation… ▽ More The formation of plasmons through the collective excitation of charge density has generated intense discussions, offering insights to fundamental sciences and potential applications. While the underlying physical principles have been well-established, the effects of many-body interactions and orbital hybridization on plasmonic dynamics remain understudied. In this work, we present the observation of conventional metallic and correlated plasmons in epitaxial La1-xSrxNiO3 (LSNO) films with varying Sr do** concentrations (x = 0, 0.125, 0.25), unveiling their intriguing evolution. Unlike samples at other do** concentrations, the x = 0.125 intermediate do** sample does not exhibit the correlated plasmons despite showing high optical conductivity. Through a comprehensive experimental investigation using spectroscopic ellipsometry and X-ray absorption spectroscopy, the O2p-Ni3d orbital hybridization for LSNO with a do** concentration of x = 0.125 is found to be significantly enhanced, alongside a considerable weakening of its effective correlation U*. These factors account for the absence of correlated plasmons and the high optical conductivity observed in LSNO (0.125). Our results underscore the profound impact of orbital hybridization on the electronic structure and the formation of plasmon in strongly-correlated systems. This in turn suggest that LSNO could serve as a promising alternative material in optoelectronic devices. △ Less

Submitted 1 June, 2024; v1 submitted 29 April, 2024; originally announced April 2024.

Realization of a Two-Dimensional Lieb Lattice in a Metal-Inorganic Framework with Flat Bands and Topological Edge States

Authors: Wenjun Wu, Shuo Sun, Chi Sin Tang, **g Wu, Yu Ma, Lingfeng Zhang, Chuanbing Cai, Jianxin Zhong, Milorad V. Milošević, Andrew T. S. Wee, Xinmao Yin

Abstract: Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally des… ▽ More Flat bands and Dirac cones in materials are at the source of the exotic electronic and topological properties. The Lieb lattice is expected to host these electronic structures, arising from quantum destructive interference. Nevertheless, the experimental realization of a two-dimensional Lieb lattice remained challenging to date due to its intrinsic structural instability. After computationally designing a Platinum-Phosphorus (Pt-P) Lieb lattice, we have successfully overcome its structural instability and synthesized it on a gold substrate via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy verified the Lieb lattice's morphology and electronic flat bands. Furthermore, topological Dirac edge states stemming from pronounced spin-orbit coupling induced by heavy Pt atoms have been predicted. These findings convincingly open perspectives for creating metal-inorganic framework-based atomic lattices, offering prospects for strongly correlated phases interplayed with topology. △ Less

Submitted 29 April, 2024; originally announced April 2024.

Comments: 24 pages,11 figures

Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures

Authors: Mingyao Chen, Huimin Liu, Xu He, Minjuan Li, Chi Sin Tang, Mengxia Sun, Krishna Prasad Koirala, Mark E. Bowden, Yangyang Li, Xiongfang Liu, Difan Zhou, Shuo Sun, Mark B. H. Breese, Chuanbing Cai, Yingge Du, Andrew T. S. Wee, Le Wang, Xinmao Yin

Abstract: The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown… ▽ More The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 thin films grown on a series of single crystal substrates. Unlike films synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure which features an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by the orbital hybridization between Ti 3d orbitals of the STO substrate and O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin-films, thereby offering key insights into tuning their interfacial properties. △ Less

Submitted 29 April, 2024; originally announced April 2024.

Comments: 26 pages,4 figures

Exciton-activated effective phonon magnetic moment in monolayer MoS2

Authors: Chunli Tang, Gaihua Ye, Cynthia Nnokwe, Mengqi Fang, Li Xiang, Masoud Mahjouri-Samani, Dmitry Smirnov, Eui-Hyeok Yang, Tingting Wang, Lifa Zhang, Rui He, Wencan **

Abstract: Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer… ▽ More Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons. △ Less

Submitted 7 April, 2024; v1 submitted 22 March, 2024; originally announced March 2024.

Journal ref: Phys. Rev. B 109, 155426 (2024)

Polarization multistates in composite ferroelectrics

Authors: Chuhan Tang, Zhiqiang Tian, Tao Ouyang, Anlian Pan, Mingxing Chen

Abstract: Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric memory devices toward ultra-high density information storage. Here, we propose to build multistates in composite ferroelectrics, which have both the intrinsic and sliding-induced polarizations. We illustrate the concept in H-stacking bilayers of 1T'' transition-metal dichalcogeni… ▽ More Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric memory devices toward ultra-high density information storage. Here, we propose to build multistates in composite ferroelectrics, which have both the intrinsic and sliding-induced polarizations. We illustrate the concept in H-stacking bilayers of 1T'' transition-metal dichalcogenides by first-principle calculations. We find that there is at least one order of magnitude difference in the energy barriers between these two types polarizations, which suggests that the external electric fields required to flip** them are significantly different. This difference allows for a novel flip** mechanism involving layer sliding and layer-by-layer flip** for the transforming of the polarization states. As a result, sextuple switchable states can be achieved for the 1T'' bilayers by properly controlling electrical field. Our study provides a new route to design polarization multistates for develo** next-generation memory devices. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Comments: 6 pages, 3 figures

Magneto-optical properties of a quantum dot array interacting with a far-infrared photon mode of a cylindrical cavity

Authors: Vidar Gudmundsson, Vram Mughnetsyan, Hsi-Sheng Goan, Jeng-Da Chai, Nzar Rauf Abdullah, Chi-Shung Tang, Valeriu Moldoveanu, Andrei Manolescu

Abstract: We model the equilibrium properties of a two-dimensional electron gas in a square lateral superlattice of quantum dots in a GaAs heterostructure subject to an external homogeneous perpendicular magnetic field and a far-infrared circular cylindrical photon cavity with one quantized mode, the TE011 mode. In a truncated linear basis constructed by a tensor product of the single-electron states of the… ▽ More We model the equilibrium properties of a two-dimensional electron gas in a square lateral superlattice of quantum dots in a GaAs heterostructure subject to an external homogeneous perpendicular magnetic field and a far-infrared circular cylindrical photon cavity with one quantized mode, the TE011 mode. In a truncated linear basis constructed by a tensor product of the single-electron states of the noninteracting system and the eigenstates of the photon number operator, a local spin density approximation of density functional theory is used to compute the electron-photon states of the two-dimensional electron gas in the cavity. The common spatial symmetry of the vector fields for the external magnetic field and the cavity photon field in the long wavelength approximation enhances higher order magnetic single- and multi-photon processes for both the para- and the diamagnetic electron-photon interactions. The electron-photon coupling introduces explicit photon replicas into the bandstructure and all subbands gain a photon content, constant for each subband, that can deviate from an integer value as the coupling is increased or the photon energy is varied. The subbands show a complex Rabi anticrossing behavior when the photon energy and the coupling bring subbands into resonances. The complicated energy subband structure leads to photon density variations in reciprocal space when resonances occur in the spectrum. The electron-photon coupling polarizes the charge density and tends to reduce the Coulomb exchange effects as the coupling strength increases. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Comments: RevTeX - pdfLaTeX, 12 pages with 8 included pdf figures

Journal ref: Phys. Rev. B 109, 235306 (2024)

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ul… ▽ More We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 9 pages, 11 figures

Can we predict mixed grain boundaries from their tilt and twist components?

Authors: Wei Wan, Changxin Tang, Eric R. Homer

Abstract: One of the major challenges towards understanding and further utilizing the properties and functional behaviors of grain boundaries (GB) is the complexity of general GBs with mixed tilt and twist characters. Here, we report the correlations between mixed GBs and their tilt and twist components in terms of structure, energy and stress field by computationally examining 7040 silicon GBs. Such correl… ▽ More One of the major challenges towards understanding and further utilizing the properties and functional behaviors of grain boundaries (GB) is the complexity of general GBs with mixed tilt and twist characters. Here, we report the correlations between mixed GBs and their tilt and twist components in terms of structure, energy and stress field by computationally examining 7040 silicon GBs. Such correlations indicate that low angle mixed GBs are formed through the reconstruction mechanisms between their superposed tilt and twist components, which are revealed as the energetically favorable dissociation, motion and reaction of dislocations and stacking faults. In addition, various complex disconnection network structures are discovered near the conventional twin and structural unit GBs, implying the role of disconnection superposition in forming high angle mixed GBs. By unveiling the energetic correlation, an extended Read-Shockley model that predicts the general trends of GB energy is proposed and confirmed in various GB structures across different lattices. Finally, this work is validated in comparison with experimental observations and first-principles calculations. △ Less

Submitted 4 June, 2024; v1 submitted 4 March, 2024; originally announced March 2024.

Comments: 25 pages 10 figures

On the origin of topotactic reduction effect for superconductivity in infinite-layer nickelates

Authors: Shengwei Zeng, Chi Sin Tang, Zhaoyang Luo, Lin Er Chow, Zhi Shiuh Lim, Saurav Prakash, ** Yang, Caozheng Diao, Xiaojiang Yu, Zhenxiang Xing, Rong Ji, Xinmao Yin, Changjian Li, X. Renshaw Wang, Qian He, Mark B. H. Breese, A. Ariando, Huajun Liu

Abstract: Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic r… ▽ More Topotactic reduction utilizing metal hydrides as reagents emerges as an effective approach to achieve exceptionally low oxidization states of metal ions and unconventional coordination networks. This method opens avenues to the development of entirely new functional materials, with one notable example being the infinite-layer nickelate superconductors. However, the reduction effect on the atomic reconstruction and electronic structures -- crucial for superconductivity -- remains largely unresolved. We design two sets of control Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ thin films and implement secondary ion mass spectroscopy to highlight the absence of reduction-induced hydrogen intercalation. X-ray absorption spectroscopy shows a significant linear dichroism with dominant Ni 3d$_{x2{-}y2}$ orbitals on superconducting samples, indicating a Ni single-band nature of infinite-layer nickelates. Consistent with the superconducting $T_c$, the Ni 3d orbitals asymmetry manifests a dome-like reduction duration dependence. Our results unveil the critical role of reduction in modulating the Ni-3d orbital polarization and its impact on the superconducting properties. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Comments: Main: 21 pages, 4 figure - Supplementary: 7 pages, 5 figure

Terahertz plasmonic resonances in coplanar graphene nanoribbon structures

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic… ▽ More We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the CNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors. △ Less

Submitted 9 March, 2024; v1 submitted 6 February, 2024; originally announced February 2024.

Comments: 8 pages, 4 figures

Journal ref: J. Appl. Phys. 135, 114503 (2024)

Optical detection of small polarons in vanadium dioxide and their critical role in mediating metal-insulator transition

Authors: Xiongfang Liu, Tong Yang, **g Wu, Mengxia Sun, Mingyao Chen, Chi Sin Tang, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin

Abstract: In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic… ▽ More In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We demonstrate that polaron dynamics play a complementary role in facilitating Peierls and Mott transitions to contribute to the MIT processes. Moreover, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film provide valuable insights into their electron structures. This study provides an understanding of the MIT mechanism in correlated systems and highlights how polarons, lattice distortions and electron correlations facilitate the phase transition processes in strongly-correlated systems, while further inspiring the development of new device functionalities. △ Less

Submitted 28 December, 2023; originally announced December 2023.

Comments: 24 pages,4 figures,research article

Zr-Co-Al bulk metallic glass composites containing B2 ZrCo via rapid quenching and annealing

Authors: Yu Chen, Chunguang Tang, Kevin Laws, Qiang Zhu, Michael Ferry

Abstract: As a promising remedy for overcoming the limited ductility and work softening of bulk metallic glasses (BMGs), BMG composites incorporating a B2 crystalline phase have attracted considerable attention. Here, we explore the formation of Zr-Co-Al BMG composites by quenching alloys Zr$_{55}$Co$_{31}$Al$_{14}$, Zr$_{54.5}$Co$_{33.5}$Al$_{12}$, Zr$_{53.5}$Co$_{36.5}$Al$_{10}$, Zr$_{52.5}$Co$_{37.5}$Al… ▽ More As a promising remedy for overcoming the limited ductility and work softening of bulk metallic glasses (BMGs), BMG composites incorporating a B2 crystalline phase have attracted considerable attention. Here, we explore the formation of Zr-Co-Al BMG composites by quenching alloys Zr$_{55}$Co$_{31}$Al$_{14}$, Zr$_{54.5}$Co$_{33.5}$Al$_{12}$, Zr$_{53.5}$Co$_{36.5}$Al$_{10}$, Zr$_{52.5}$Co$_{37.5}$Al$_{10}$, and Zr$_{43}$Co$_{43}$Al$_{14}$. We found the first alloy fully amorphous whereas the fifth was fully crystallized upon quenching. The other three were quenched to generate composite structures, with a higher fraction of B2 ZrCo phase with increasing Co/Zr ratio and decreasing Al content. For comparison, the formation of B2 ZrCo in annealed Zr$_{55}$Co$_{31}$Al$_{14}$ was also studied. For both approaches the influence of crystalline phases on hardness was examined. △ Less

Submitted 24 October, 2023; originally announced October 2023.

Journal ref: Journal of Alloys and Compounds 820 (2020) 153079

Natural liquid organic hydrogen carrier with low dehydrogenation energy: A first principles study

Authors: Chunguang Tang, Shunxin Fei, G. David Lin, Yun Liu

Abstract: Liquid organic hydrogen carriers (LOHCs) represent a promising approach for hydrogen storage due to their favorable properties including stability and compatibility with the existing infrastructure. However, fossil-based LOHC molecules are not green or sustainable. Here we examined the possibility of using norbelladine and trisphaeridine, two typical structures of Amaryllidaceae alkaloids, as the… ▽ More Liquid organic hydrogen carriers (LOHCs) represent a promising approach for hydrogen storage due to their favorable properties including stability and compatibility with the existing infrastructure. However, fossil-based LOHC molecules are not green or sustainable. Here we examined the possibility of using norbelladine and trisphaeridine, two typical structures of Amaryllidaceae alkaloids, as the LOHCs from the sustainable and renewable sources of natural products. Our first principles thermodynamics calculations reveal low reversibility for the reaction of norbelladine to/from perhydro-norbelladine because of the existence of stabler isomers of perhydro-norbelladine. On the other hand, trisphaeridine is found promising due to its high hydrogen storage capacity ($\sim$5.9 wt\%) and favorable energetics. Dehydrogenation of perhydro-trisphaeridine has an average standard enthalpy change of $\sim$54 KJ/mol-H$_2$, similar to that of perhydro-\textit{N}-ethylcarbazole, a typical LOHC known for its low dehydrogenation enthalpy. This work is a first exploration of Amaryllidaceae alkaloids for hydrogen storage and the results demonstrate, more generally, the potential of bio-based molecules as a new sustainable resource for future large-scale hydrogen storage. △ Less

Submitted 24 October, 2023; originally announced October 2023.

Journal ref: International Journal of Hydrogen Energy, 45, 32089 (2020)

Is hydrogen diffusion in amorphous metals non-Arrhenian?

Authors: Chunguang Tang, Gang Sun, Yun Liu

Abstract: Hydrogen diffusion is critical to the performance of metals for hydrogen storage as well as other important applications. As compared to its crystalline counterpart which follows the Arrhenius relation, hydrogen diffusion in amorphous metals sometimes are experimentally found to be non-Arrhenian. In this work we studied the diffusion of hydrogen in amorphous Pd-H and Zr-Cu-H alloys based on molecu… ▽ More Hydrogen diffusion is critical to the performance of metals for hydrogen storage as well as other important applications. As compared to its crystalline counterpart which follows the Arrhenius relation, hydrogen diffusion in amorphous metals sometimes are experimentally found to be non-Arrhenian. In this work we studied the diffusion of hydrogen in amorphous Pd-H and Zr-Cu-H alloys based on molecular dynamics simulations. Our simulations confirm Arrhenian diffusion behaviour for hydrogen in amorphous alloys, in contrast to previous theoretical studies which predict non-Arrhenian behaviour. We show that the simulated non-Arrhenian diffusion based on molecular dynamics could result from a systematic error related to too short simulation time. We also discussed the experimental non-Arrhenian behaviour of hydrogen diffusion within the framework of quantum tunneling and amorphous-amorphous phase transformations. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Journal ref: International Journal of Hydrogen Energy, 47, 9627 (2022)

Critical dehydrogenation steps of perhydro-N-ethylcarbazole on Ru(0001) surface

Authors: Chunguang Tang, Preetham Permude, Shunxin Fei, Terry J. Frankcombe, Sean C. Smith, Yun Liu

Abstract: Understanding of the critical atomistic steps during the dehydrogenation process of liquid organic hydrogen carriers (LOHCs) is important to the design of cost-efficient, high-performance LOHC catalysts. Based on the density functional theory (DFT) we studied the thermodynamics and kinetics of the complete dehydrogenation path of perhydro-N-ethylcarbazole (12H-NEC) on Ru(0001) surface, involving t… ▽ More Understanding of the critical atomistic steps during the dehydrogenation process of liquid organic hydrogen carriers (LOHCs) is important to the design of cost-efficient, high-performance LOHC catalysts. Based on the density functional theory (DFT) we studied the thermodynamics and kinetics of the complete dehydrogenation path of perhydro-N-ethylcarbazole (12H-NEC) on Ru(0001) surface, involving the adsorption of 12H-NEC, the discharge of H ions onto Ru surface, and the desorption of H2 and hydrogen-lean NEC. It was found that the bonding of nH-NEC is significantly strengthened for n $\le$ 4 because of the flat aromatic ring. Although the whole dehydrogenation process is endothermic, the release of H from nH-NEC, with H adsorbed onto the Ru surface, was found to be exothermic. The desorption of flat, hydrogen-lean NEC, which costs ~255 kJ/mol, was identified as the most energy demanding step. In addition, the effect of surface morphology on adsorption was studied based on an amorphous surface model. Overall, the results imply more efficient dehydrogenation could be achieved from relatively weak bonding of NEC to catalysts, either through engineering catalyst surface (such as surface defects or smaller catalyst particles) or different catalyst materials. Our calculations also revealed possible dealkylation at elevated temperatures. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Journal ref: Computational Materials Science 229 (2023) 112373

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector… ▽ More We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence. △ Less

Submitted 15 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures

An Isotropic Discretization with Semi-implicit Approach for Phase Field Model of Alloy Solidification

Authors: Chao Tang, David Taiyen Wu, Siu Sin Quek

Abstract: Quantitative phase field models have been extensively used to study the solidification behavior of alloys under different conditions. However, a longstanding challenge of phase field models is the directional bias caused by the discretization-induced lattice effects. In particular, widely used discretization methods may introduce significant spurious anisotropy for simulations of polycrystalline s… ▽ More Quantitative phase field models have been extensively used to study the solidification behavior of alloys under different conditions. However, a longstanding challenge of phase field models is the directional bias caused by the discretization-induced lattice effects. In particular, widely used discretization methods may introduce significant spurious anisotropy for simulations of polycrystalline solidification. In this paper, we demonstrate a feasible 2D discretization strategy utilizing a hexagonal mesh to reduce the lattice-induced anisotropy of the phase field model. The leading differential terms of the 2D discretization methods are analyzed by using known methods in Fourier space. Using Taylor expansion of discrete Fourier Transform up to sixth order, we found that the proposed discretization strategy is more accurate and isotropic than other methods, including the isotropic discretization recently proposed by Ji et al.[1]. Additionally, the proposed 2D discretization method can be easily incorporated into a semi-implicit algorithm to solve phase field equations, thereby greatly reducing time step constraints and improving computational efficiency compared to explicit approaches. To prove the accuracy and efficiency of the proposed isotropic discretization with semi-implicit algorithm, 2D simulations of alloy solidification with different discretization schemes were performed and compared. We show that the proposed discretization using a hexagonal mesh can drastically reduce grid-induced anisotropy compared to conventional methods. △ Less

Submitted 2 September, 2023; originally announced September 2023.

MSC Class: 65Mxx ACM Class: G.1.8

Vertical Ferroelectricity in Van der Waals Materials: Models and Devices

Authors: Yuwen Zhang, Chunfeng Cui, Chaoyu He, Tao Ouyang, ** Li, Mingxing Chen, Chao Tang

Abstract: Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry requirements. In this letter, based on van derWaals stacking, a generic model is proposed for realizing ferroelectric devices, where a freely movable center layer is p… ▽ More Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it is difficult to achieve due to its special symmetry requirements. In this letter, based on van derWaals stacking, a generic model is proposed for realizing ferroelectric devices, where a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, the ferroelectric phase transition can be realized between the two equivalent and eccentric ground stacking-states with opposite polarizations. By means of first-principles calculations, taking the h-BN/h-BN/h-BN and h-BN/Graphene/h-BN as feasible models, we carefully evaluate the magnitude of ferroelectricity. The corresponding polarizations are estimated as 1.83 and 1.35 pC/m, respectively, which are comparable to the sliding ferroelectricity. Such a new tri-layer model of vertical ferroelectricity can be constructed by arbitrary van derWaals semiconducting materials, and usually holds low switching barrier. Optimized material combinations with remarkable polarization are highly expectable to be discovered from the huge candidate set for future information storage. △ Less

Submitted 20 July, 2023; originally announced July 2023.

Comments: 5 pages;4 figures

Optical conductivity enhancement and thermal reduction of BN-codoped MgO nanosheet: Significant effects of B-N atomic interaction

Authors: Nzar Rauf Abdullah, Botan Jawdat Abdullah, Yousif Hussein Azeez, Chi-Shung Tang, Vidar Gudmundsson

Abstract: We investigate the electronic, the thermal, and the optical properties of BN-codoped MgO monolayers taking into account the interaction effects between the B and the N dopant atoms. The relatively wide indirect band gap of a pure MgO nanosheet can be changed to a narrow direct band gap by tuning the B-N attractive interaction. The band gap reduction does not only enhance the optical properties, in… ▽ More We investigate the electronic, the thermal, and the optical properties of BN-codoped MgO monolayers taking into account the interaction effects between the B and the N dopant atoms. The relatively wide indirect band gap of a pure MgO nanosheet can be changed to a narrow direct band gap by tuning the B-N attractive interaction. The band gap reduction does not only enhance the optical properties, including the absorption spectra and the optical conductivity, but also the most intense peak is shifted from the Deep-UV to the visible light region. The red shifting of the absorption spectra and the optical conductivity are caused by the attractive interaction. In addition, both isotropic and anisotropic characteristics are seen in the optical properties depending on the strength of the B-N attractive interaction. The heat capacity is reduced for the BN-doped MgO monolayer, which can be referred to changes in the bond dissociation energy. The bond dissociation energy decreases as the difference in the electronegativities of the bonded atoms decreases. The lower difference in the electronegativities leads to a weaker endothermic process resulting in reduction of the heat capacity. An ab initio molecular dynamics, AIMD, calculation is utilized to check the thermodynamic stability of the pure and the BN-codoped MgO monolayers. We thus confirm that the BN-codopant atoms can be used to gain control of the properties of MgO monolayers for thermo- and opto-electronic devices. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Comments: RevTeX - pdfLaTeX, 10 pages with 8 included pdf figures

Journal ref: Solid State Communications 370, 115218 (2023)

Planar buckling controlled optical conductivity of SiC monolayer from Deep-UV to visible light region: A first-principles study

Authors: Nzar Rauf Abdullah, Hunar Omar Rashid, Botan Jawdat Abdullah, Chi-Shung Tang, Vidar Gudmundsson

Abstract: The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of the 2D nanomaterial, according to our results. The electron density of a planar SiC monolayer is calculated, as well as the effects of buckling on it. Accordin… ▽ More The electrical and optical properties of flat and planar buckled siligraphene (SiC) monolayer are examined using a first principles approach. Buckling between the Si and the C atoms in SiC structures influences and impacts the properties of the 2D nanomaterial, according to our results. The electron density of a planar SiC monolayer is calculated, as well as the effects of buckling on it. According to our findings, a siligraphene monolayer is a semiconductor nanomaterial with a direct electronic band gap that decreases as the planar buckling rises. The contributions to the density of states differ owing to changes in the system's structure. Another explanation is that planar buckling reduces the sp$^2$ overlap**, breaking the bond symmetry causing it to become a sp$^3$ bond. We show that increased planar buckling between the Si and the C atoms alters the monolayer's optical, mechanical, and thermal properties. A managed planar buckling increases the optical conductivity with a significant shift in the far visible range, as all optical spectra features are red shifted, still remaining visible. Instead of a $σ\text{-}σ$ covalent bond, the sp$^3$ hybridization produces a stronger $σ\text{-}π$ bond. Optical characteristics such as the dielectric function, the absorbance, and the optical conductivity of a SiC monolayer are investigated for both parallel and perpendicular polarization of the incoming electric field for both flat and planar buckled systems. The findings show that the optical properties are influenced for both of these two polarizations, with a significant change in the optical spectrum from the near visible to the far visible. The ability to manipulate the optical and electrical characteristics of this critical 2D material through planar buckling opens up new technological possibilities, especially for optoelectronic devices. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Comments: RevTeX - pdfLaTeX, 11 pages with 11 included pdf figure

Journal ref: Materials Chemistry and Physics 297, 127395 (2023)

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, S. G. Kalenkov, V. Mitin, M. S. Shur

Abstract: We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic… ▽ More We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 8 pages, 3 figures

Magnetic properties of a cavity-embedded square lattice of quantum dots or antidots

Authors: Vram Mughnetsyan, Vidar Gudmundsson, Nzar Rauf Abdullah, Chi-Shung Tang, Valeriu Moldoveanu, Andrei Manolescu

Abstract: We apply quantum electrodynamical density functional theory to obtain the electronic density, the spin polarization, as well as the orbital and the spin magnetization of square periodic arrays of quantum dots or antidots subjected to the influence of a far-infrared cavity photon field. A gradient-based exchange-correlation functional adapted to a two-dimensional electron gas in a transverse homoge… ▽ More We apply quantum electrodynamical density functional theory to obtain the electronic density, the spin polarization, as well as the orbital and the spin magnetization of square periodic arrays of quantum dots or antidots subjected to the influence of a far-infrared cavity photon field. A gradient-based exchange-correlation functional adapted to a two-dimensional electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non-trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and the spin magnetization. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron-photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dots structure, while they weaken the paramagnetic effect in an antidot structure. As the number of electrons per unit cell of the lattice increases the electron-photon interaction reduces the exchange forces that would otherwise promote strong spin splitting for both the dot and the antidot array. △ Less

Submitted 11 June, 2023; originally announced June 2023.

Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

Authors: M. Ryzhii, V. Ryzhii, M. S. Shur, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short sect… ▽ More We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated values of the room-temperature GC-FET THz detector responsivity and other characteristics, especially at the plasmonic resonances. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 9 pages, 8 figures

Controlling the excitation spectrum of a quantum dot array with a photon cavity

Authors: Vidar Gudmundsson, Vram Mughnetsyan, Nzar Rauf Abdullah, Chi-Shung Tang, Valeriu Moldoveanu, Andrei Manolescu

Abstract: We use a recently proposed quantum electrodynamical density functional theory (QEDFT) functional in a real-time excitation calculation for a two-dimensional electron gas in a square array of quantum dots in an external constant perpendicular magnetic field to model the influence of cavity photons on the excitation spectra of the system. The excitation is generated by a short elecrical pulse. The q… ▽ More We use a recently proposed quantum electrodynamical density functional theory (QEDFT) functional in a real-time excitation calculation for a two-dimensional electron gas in a square array of quantum dots in an external constant perpendicular magnetic field to model the influence of cavity photons on the excitation spectra of the system. The excitation is generated by a short elecrical pulse. The quantum dot array is defined in an AlGaAs-GaAs heterostructure, which is in turn embedded in a parallel plate far-infrared photon-microcavity. The required exchange and correlation energy functionals describing the electron-electron and electron-photon interactions have therefore been adapted for a two-dimensional electron gas in a homogeneous external magnetic field. We predict that the energies of the excitation modes activated by the pulse are generally red-shifted to lower values in the presence of a cavity. The red-shift can be understood in terms of the polarization of the electron charge by the cavity photons and depends on the magnetic flux, the number of electrons in a unit cell of the lattice, and the electron-photon interaction strength. We find an interesting interplay of the exchange forces in a spin polarized two-dimensional electron gas and the square lattice structure leading to a small but clear blue-shift of the excitation mode spectra when one electron resides in each dot. △ Less

Submitted 19 May, 2023; originally announced May 2023.

Comments: RevTeX - pdfLaTeX, 11 pages with 8 included pdf figures

Journal ref: Phys. Rev. B 108, 115306 (2023)

Self-passivated freestanding superconducting oxide film for flexible electronics

Authors: Zhuoyue Jia, Chi Sin Tang, **g Wu, Changjian Li, Wanting Xu, Kairong Wu, Difan Zhou, ** Yang, Shengwei Zeng, Zhigang Zeng, Dengsong Zhang, Ariando Ariando, Mark B. H. Breese, Chuanbing Cai, Xinmao Yin

Abstract: The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Fre… ▽ More The integration of high-temperature superconducting YBa2Cu3O6+x (YBCO) into flexible electronic devices has the potential to revolutionize the technology industry. The effective preparation of high-quality flexible YBCO films therefore plays a key role in this development. We present a novel approach for transferring water-sensitive YBCO films onto flexible substrates without any buffer layer. Freestanding YBCO film on a polydimethylsiloxane substrate is extracted by etching the Sr3Al2O6 sacrificial layer from the LaAlO3 substrate. In addition to the obtained freestanding YBCO thin film having a Tc of 89.1 K, the freestanding YBCO thin films under inward and outward bending conditions have Tc of 89.6 K and 88.9 K, respectively. A comprehensive characterization involving multiple experimental techniques including high-resolution transmission electron microscopy, scanning electron microscopy, Raman and X-ray Absorption Spectroscopy is conducted to investigate the morphology, structural and electronic properties of the YBCO film before and after the extraction process where it shows the preservation of the structural and superconductive properties of the freestanding YBCO virtually in its pristine state. Further investigation reveals the formation of a YBCO passivated layer serves as a protective layer which effectively preserves the inner section of the freestanding YBCO during the etching process. This work plays a key role in actualizing the fabrication of flexible oxide thin films and opens up new possibilities for a diverse range of device applications involving thin-films and low-dimensional materials. △ Less

Submitted 6 July, 2023; v1 submitted 8 May, 2023; originally announced May 2023.

Comments: 22 pages,4 figures,references added

Journal ref: Applied Physics Reviews 10, 031401 (2023)

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to a… ▽ More We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As$_x$P$_{1-x}$ energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As$_x$P$_{1-x}$ atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $10^3$~A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures. △ Less

Submitted 23 April, 2023; originally announced April 2023.

Comments: 13 pages, 5 figures

Report number: 2304.11635

Journal ref: Sci Rep 13, 9665 (2023)

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to… ▽ More We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 3 figures

Report number: arXiv:2303.08492

Journal ref: Phys. Rev. Applied 19, 064033 (2023)

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by im**ing THz radiation leading to thermionic emissi… ▽ More We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by im**ing THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large. △ Less

Submitted 24 April, 2023; v1 submitted 15 March, 2023; originally announced March 2023.

Comments: 8 pages, 4 figures

Report number: 2303.08488

Journal ref: J. Appl. Phys. 133, 174501 (2023)

Spin Dynamics in van der Waals Magnetic Systems

Authors: Chunli Tang, Laith Alahmed, Muntasir Mahdi, Yuzan Xiong, Jerad Inman, Nathan J. McLaughlin, Christoph Zollitsch, Tae Hee Kim, Chunhui Rita Du, Hidekazu Kurebayashi, Elton J. G. Santos, Wei Zhang, Peng Li, Wencan **

Abstract: The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnet… ▽ More The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnetoresistance and magneto-optical effect in 2D vdW magnets and their heterostructures, emerging concepts of spintronic and optoelectronic applications such as spin tunnel field-effect transistors and spin-filtering devices are explored. While the magnetic ground state has been extensively investigated, reliable characterization and control of spin dynamics play a crucial role in designing ultrafast spintronic devices. Ferromagnetic resonance (FMR) allows direct measurements of magnetic excitations, which provides insight into the key parameters of magnetic properties such as exchange interaction, magnetic anisotropy, gyromagnetic ratio, spin-orbit coupling, dam** rate, and domain structure. In this review article, we present an overview of the essential progress in probing spin dynamics of 2D vdW magnets using FMR techniques. Given the dynamic nature of this field, we focus mainly on broadband FMR, optical FMR, and spin-torque FMR, and their applications in studying prototypical 2D vdW magnets. We conclude with the recent advances in laboratory- and synchrotron-based FMR techniques and their opportunities to broaden the horizon of research pathways into atomically thin magnets. △ Less

Submitted 28 August, 2023; v1 submitted 24 January, 2023; originally announced January 2023.

Comments: 42 pages, 16 figures, 3 tables

Journal ref: Physics Reports, 1032, 1-36 (2023)

Simulation of environmental impacts on the synthesis of carbyne with more than 6000 atoms for emerging continuously tunable energy barriers in CNT-based transistors

Authors: Chi Ho Wong, Yan Ming Yeung, Xin Zhao, Wing Cheung Law, Chak-yin Tang, Chee Leung Mak, Chi Wah Leung, Lei Shi, Rolf Lortz

Abstract: Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne canno… ▽ More Transistors made up of carbon nanotubes CNT have demonstrated excellent current-voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite the direct band gap of carbyne inside a CNT can be widely tuned by strain, the size of carbyne cannot be controlled easily. The production of a monoatomic chain with more than 6000 carbon atoms is an enormous technological challenge. To predict the optimal chain length of a carbyne in different molecular environments, we have developed a Monte Carlo model in which a finite-length carbyne with a size of 4000-15000 atoms is encapsulated by a CNT at finite temperatures. Our simulation shows that the stability of the carbyne@nanotube is strongly influenced by the nature and porosity of the CNT, the external pressure, the temperature and the chain length. We have observed an initiation of chain-breaking process in a compressed carbyne@nanotube. Our work provides much needed input for optimising the carbyne length to produce carbon chains much longer than 6000 atoms at ~300K. Design rules are proposed for synthesizing ~1% strained carbyne@(6,5)CNT as a component in CNT-based transistors to tune the energy barriers continuously. △ Less

Submitted 19 January, 2023; originally announced January 2023.

Comments: arXiv admin note: substantial text overlap with arXiv:2207.14558

Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films

Authors: Guoliang Yu, Chuhan Tang, Zhiqiang Tian, Ziming Zhu, Anlian Pan, Mingxing Chen, Xing-Qiu Chen

Abstract: Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically… ▽ More Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hop** channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials. △ Less

Submitted 27 September, 2023; v1 submitted 1 January, 2023; originally announced January 2023.

Comments: 8.2 pages and 3 figures

Journal ref: Phys. Rev. B 108, 014106 (2023)

Structures and energies of computed silicon (001) small angle mixed grain boundaries as a function of three macroscopic characters

Authors: Wei Wan, Changxin Tang

Abstract: Understanding how dislocation structures vary with grain boundary (GB) characters enables accurate controls of interfacial nano-patterns. In this atomistic study, we report the structure-property correlations of Si (001) small angle mixed grain boundaries (SAMGBs) under three macroscopic GB characters (tilt character, twist character, and an implicit rotation character between them). Firstly, the… ▽ More Understanding how dislocation structures vary with grain boundary (GB) characters enables accurate controls of interfacial nano-patterns. In this atomistic study, we report the structure-property correlations of Si (001) small angle mixed grain boundaries (SAMGBs) under three macroscopic GB characters (tilt character, twist character, and an implicit rotation character between them). Firstly, the SAMGB energies are computed as a function of tilt angle, twist angle and rotation angle, based on which a revised Read-Shockley relationship capable of precisely describing the energy variations span the three-dimensional GB character space is fitted. Secondly, GB structural transitions from dislocation to amorphous structures are given as a function of tilt angle, twist angle and dislocation core radii. The proportion, topology and structural signatures of different SAMGB types defined from the ratio between the tilt and twist angles are also presented. Thirdly, by extracting the transformation of metastable SAMGB phases, the formation mechanisms of SAMGB structures are characterized as energetically favorable dislocation glide and reaction, from which the dislocation density function is derived. The relevant results about SAMGB energies and structures are validated and supported by theoretical calculations and experimental observations, respectively. △ Less

Submitted 22 May, 2023; v1 submitted 30 December, 2022; originally announced December 2022.

Comments: 26 pages, 10 figures and 2 tables

Journal ref: Acta Materialia, Volume 261 (2023) 119353

Competition of non-Hermitian skin effect and topological localization of corner states observed in circuits

Authors: Chan Tang, Huanhuan Yang, Lingling Song, Xianglong Yao, Peng Yan, Yunshan Cao

Abstract: Exploring topological phases in non-Hermitian systems has attracted significant recent attention. One intriguing question is how topological edge states compete with the non-Hermitian skin effect. Here, we report the experimental observation of corner states in a two-dimensional non-reciprocal rhombus honeycomb electric circuit. We construct non-reciprocal and non-Hermitian circuits by introducing… ▽ More Exploring topological phases in non-Hermitian systems has attracted significant recent attention. One intriguing question is how topological edge states compete with the non-Hermitian skin effect. Here, we report the experimental observation of corner states in a two-dimensional non-reciprocal rhombus honeycomb electric circuit. We construct non-reciprocal and non-Hermitian circuits by introducing current-direction resolved capacitance between two nodes depends on the current direction. Skin effect thus emerges due to the non-reciprocity and prevails in dragging the corner state into the bulk. The non-Bloch winding number defined in generalized Brillouin zone is adopted to characterize the topological phase transition. Interestingly, we find that the non-Bloch $Z_2$ Berry phase can serve as an invariant to describe the non-Hermitian topology. By tuning the non-reciprocal parameter, we observe unbalanced distribution of corner states emerging on two acute angles of the rhombus lattice, with the localization length of the left corner state increasing exponentially with the degree of non-reciprocity. △ Less

Submitted 1 July, 2023; v1 submitted 23 December, 2022; originally announced December 2022.

Comments: 9 pages, 8 figures; Accepted by PRB

The Duel of Magnetic Interactions & Structural Instabilities: Itinerant Frustration in the Triangular Lattice Compound LiCrSe$_2$

Authors: E. Nocerino, S. Kobayashi, C. Witteveen, O. K. Forslund, N. Matsubara, C. Tang, T. Matsukawa, A. Hoshikawa, A. Koda, K. Yoshimura, I. Umegaki, Y. Sassa, F. O. von Rohr, V. Pomjakushin, J. H. Brewer, J. Sugiyama, M. Månsson

Abstract: The recent synthesis of the chromium selenide compound LiCrSe$_2$ constitutes a valuable addition to the ensemble of two-dimensional triangular lattice antiferromagnets (2D-TLA). In this work we present the very first comprehensive study of the combined low temperature nuclear and magnetic structure established in this material. Details on the connection between Li-ion dynamics and structural chan… ▽ More The recent synthesis of the chromium selenide compound LiCrSe$_2$ constitutes a valuable addition to the ensemble of two-dimensional triangular lattice antiferromagnets (2D-TLA). In this work we present the very first comprehensive study of the combined low temperature nuclear and magnetic structure established in this material. Details on the connection between Li-ion dynamics and structural changes are also presented along with a direct link between atomic structure and spin order via a strong magnetoelastic coupling. LiCrSe$_2$ was found to undergo a first order structural transition from a trigonal crystal system with space group $P\bar{3}m1$ to a monoclinic one with space group $C2/m$ at $T_{\rm s}=30$~K. Such restructuring of the lattice is accompanied by a magnetic transition at $T_{\rm N}=30$~K, with the formation of a complex spin arrangement for the Cr$^{3+}$ moments. Refinement of the magnetic structure with neutron diffraction data and complementary muon spin rotation analysis reveal the presence of two incommensurate magnetic domains with a up-up-down-down arrangement of the spins with ferromagnetic (FM) double chains coupled antiferromagnetically (AFM). In addition to this unusual arrangement, the spin axial vector is modulated both in direction and modulus, resulting in a spin density wave-like order with periodic suppression of the Cr moment along the chains. This behavior is believed to appear as a result of strong competition between direct exchange AFM and superexchange FM couplings established between both nearest neighbor and next nearest neighbor Cr$^{3+}$ ions. We finally conjecture that the resulting magnetic order is stabilized via subtle vacancy/charge order within the Li layers, potentially causing a mix of two different magnetic phases within the sample. △ Less

Submitted 20 November, 2022; v1 submitted 13 November, 2022; originally announced November 2022.

Evolution of the strange-metal scattering in momentum space of electron-doped ${\rm La}_{2-x}{\rm Ce}_x{\rm CuO}_4$

Authors: Cenyao Tang, Zefeng Lin, Shunye Gao, ** Zhao, Xingchen Guo, Zhicheng Rao, Yigui Zhong, Xilin Feng, Jianyu Guan, Yaobo Huang, Tian Qian, Kun Jiang, Kui **, Yujie Sun, Hong Ding

Abstract: The linear-in-temperature resistivity is one of the important mysteries in the strange metal state of high-temperature cuprate superconductors. To uncover this anomalous property, the energy-momentum-dependent imaginary part of the self-energy Im ${\rm Σ}(k, ω)$ holds the key information. Here we perform systematic do**, momentum, and temperature-dependent angle-resolved photoemission spectrosco… ▽ More The linear-in-temperature resistivity is one of the important mysteries in the strange metal state of high-temperature cuprate superconductors. To uncover this anomalous property, the energy-momentum-dependent imaginary part of the self-energy Im ${\rm Σ}(k, ω)$ holds the key information. Here we perform systematic do**, momentum, and temperature-dependent angle-resolved photoemission spectroscopy measurements of electron-doped cuprate ${\rm La}_{2-x}{\rm Ce}_x{\rm CuO}_4$ and extract the evolution of the strange metal scattering in momentum space. At low do** levels and low temperatures, Im ${\rmΣ} \propto ω$ dependence dominates the whole momentum space. For high do** levels and high temperatures, Im ${\rmΣ} \propto ω^2$ shows up, starting from the antinodal region. By comparing with the hole-doped cuprates ${\rm La}_{2-x}{\rm Sr}_x{\rm CuO}_4$ and ${\rm Bi}_2{\rm Sr}_2{\rm CaCu}_2{\rm O}_8$, we find a dichotomy of the scattering rate exists along the nodal and antinodal direction, which is ubiquitous in the cuprate family. Our work provides new insight into the strange metal state in cuprates. △ Less

Submitted 9 November, 2022; originally announced November 2022.

Phase Behaviors of Ionic Liquids Attributed to the Dual Ionic and Organic Nature

Authors: Chenyu Tang, Yanting Wang

Abstract: Ionic liquids (ILs), also known as room-temperature molten salts, are composed of pure ions with melting points usually below 100 degrees centigrade. Because of their low volatility and vast amounts of species, ILs can serve as "green solvents" and "designer solvents" to meet the requirements of various applications by fine tuning their molecular structures. A good understanding of the phase behav… ▽ More Ionic liquids (ILs), also known as room-temperature molten salts, are composed of pure ions with melting points usually below 100 degrees centigrade. Because of their low volatility and vast amounts of species, ILs can serve as "green solvents" and "designer solvents" to meet the requirements of various applications by fine tuning their molecular structures. A good understanding of the phase behaviors of ILs is certainly fundamentally important in terms of their wide applications. This review intends to summarize the major conclusions so far drawn on phase behaviors of ILs by computational, theoretical, and experimental studies, illustrating the intrinsic relationship between their dual ionic and organic nature and the crystalline phases, nanoscale segregation liquid phase, ionic liquid crystal phases, as well as phase behaviors of their mixture with small organic molecules. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Comments: 21 pages, 12 figures, 157 references

Journal ref: Commun. Theor. Phys., 74, 097601, 2022

Direct observation of two-dimensional small polarons at correlated oxide interface

Authors: Chi Sin Tang, Shengwei Zeng, **g Wu, Shunfeng Chen, Dongsheng Song, Milošević, ** Yang, Caozheng Diao, Jun Zhou, Stephen J. Pennycook, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Ariando Ariando, Ming Yang, Andrew T. S. Wee, Xinmao Yin

Abstract: Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution… ▽ More Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution spectroscopic ellipsometry.First-principles investigations further reveals that strong coupling between the interfacial electrons and the Ti-lattice result in the formation of localized 2D small polarons.These findings resolve the longstanding issue where the excess experimentally measured interfacial carrier density is significantly lower than theoretically predicted values.The charge-phonon induced lattice distortion further provides an analogue to the superconductive states in magic-angle twisted bilayer graphene attributed to the many-body correlations induced by broken periodic lattice symmetry.Our study sheds light on the multifaceted complexity of broken periodic lattice induced quasi-particle effects and its relationship with superconductivity. △ Less

Submitted 6 July, 2023; v1 submitted 25 October, 2022; originally announced October 2022.

Report number: Applied Physics Reviews 10,031406(2023)

Two-Dimensional Charge Localization at the Perovskite Oxide Interface

Authors: Chi Sin Tang, Shengwei Zeng, Caozheng Diao, **g Wu, Shunfeng Chen, Mark B. H. Breese, Chuanbing Cai, Ariando Ariando, Andrew T. S. Wee, Xinmao Yin

Abstract: The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D… ▽ More The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite oxide heterostructures,while disorders introduced via various external stimuli have strong influences on the (de)localization of the interfacial two-dimensional (2D) electrons, these factors alone could not fully account for the system's charge dynamics where interfacial hybridization holds very strong influence.Here, we determine that the displaced 2D free electrons are localized in the specific hybridized states at the LaAlO3/SrTiO3(LAO/STO) interface.This experimental study combines both transport measurements and temperature-dependent X-ray absorption spectroscopy and suggests the localization of 2D electrons can be induced via temperature reduction or ionic liquid gating and it applies to both amorphous and crystalline interfacial systems.Specifically, we demonstrate that interfacial hybridization plays a pivotal role in regulating the 2D electron localization effects.Our study resolves the location where the 2D electrons are localized and highlights the importance of interfacial hybridization and opens further scientific investigation of its influence on 2D charge localization in oxide heterointerfaces. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Orbital hybridization-driven charge density wave transition in CsV3Sb5 kagome superconductor

Authors: Shulun Han, Chi Sin Tang, Linyang Li, Yi Liu, Huimin Liu, Jian Gou, **g Wu, Difan Zhou, ** Yang, Caozheng Diao, Jiacheng Ji, **ke Bao, Lingfeng Zhang, Mingwen Zhao, M. V. Milošević, Yanqun Guo, Lijun Tian, Mark B. H. Breese, Guanghan Cao, Chuanbing Cai, Andrew T. S. Wee, Xinmao Yin

Abstract: Owing to its inherent non-trivial geometry, the unique structural motif of the recently discovered Kagome topological superconductor AV3Sb5 is an ideal host of diverse topologically non-trivial phenomena, including giant anomalous Hall conductivity, topological charge order, charge density wave, and unconventional superconductivity. Despite possessing a normal-state CDW order in the form of topolo… ▽ More Owing to its inherent non-trivial geometry, the unique structural motif of the recently discovered Kagome topological superconductor AV3Sb5 is an ideal host of diverse topologically non-trivial phenomena, including giant anomalous Hall conductivity, topological charge order, charge density wave, and unconventional superconductivity. Despite possessing a normal-state CDW order in the form of topological chiral charge order and diverse superconducting gaps structures, it remains unclear how fundamental atomic-level properties and many-body effects including Fermi surface nesting, electron-phonon coupling, and orbital hybridization contribute to these symmetry-breaking phenomena. Here, we report the direct participation of the V3d-Sb5p orbital hybridization in mediating the CDW phase transition in CsV3Sb5. The combination of temperature-dependent X-ray absorption and first principles studies clearly indicate the Inverse Star of David structure as the preferred reconstruction in the low-temperature CDW phase. Our results highlight the critical role that Sb orbitals plays and establish orbital hybridization as the direct mediator of the CDW states and structural transition dynamics in Kagome unconventional superconductors. This is a significant step towards the fundamental understanding and control of the emerging correlated phases from the Kagome lattice through the orbital interactions and provide promising approaches to novel regimes in unconventional orders and topology. △ Less

Submitted 8 December, 2022; v1 submitted 23 October, 2022; originally announced October 2022.

Study of the buckling effects on the electrical and optical properties of the group III-Nitride monolayers

Authors: Nzar Rauf Abdullah, Botan Jawdat Abdullah, Hunar Omar Rashid, Chi-Shung Tang, Vidar Gudmundsson

Abstract: We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $Δ$. By tuning the $Δ$, the strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat form of these monolayers can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridiza… ▽ More We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $Δ$. By tuning the $Δ$, the strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat form of these monolayers can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization. Consequently, the band gaps of the monolayers are tuned due to a dislocation of the $s$- and $p$-orbitals towards the Fermi energy. The band gaps decrease with increasing $Δ$ for those flat monolayers, which have a band gap greater than $1.0$ eV, while no noticeable change or a flat dispersion of the band gap is seen for the flat monolayers, that have a band gap less than $1.0$ eV. The decreased band gap causes a decrease in the excitation energy, and thus the static dielectric function, refractive index, and the optical conductivity are increased. In contrast, the flat band gap dispersion of few monolayers in the group III-Nitride induces a reduction in the static dielectric function, the refractive index, and the optical conductivity. We therefore confirm that tuning of the planar buckling can be used to control the physical properties of these monolayers, both for an enhancement and a reduction of the optical properties. These results are of interest for the design of optoelectric devices in nanoscale systems. △ Less

Submitted 1 July, 2022; originally announced July 2022.

Comments: RevTeX - pdfLaTeX, 7 pages with 7 included pdf figures

Journal ref: Materials Science in Semiconductor Processing 150, 106943 (2022)

Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure

Authors: Koichi Tamura, Chao Tang, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou

Abstract: We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias depe… ▽ More We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection under periodic electron density modulation conditions with depleted regions and photothermoelectric detection under highly doped conditions without depleted regions. We identified the photothermoelectric detection that we observed as a new type of unipolar mechanism in which only electrons or holes contribute to rectifying the THz radiation under current-driven conditions. These two detection mechanisms coexist in a certain wide transcendent range of the applied bias voltages. It was also clearly manifested that the temporal photoresponse of the plasmonic and photothermoelectric detection are comparably fast on the order of 10 ps, whereas the maximal photoresponsivity of the photothermoelectric detection is almost twice as high as that of the plasmonic detection under the applied biases conditions. These results suggest that the ADGG-EG-FET THz detector will be promising for use in 6G- and 7G-class high-speed wireless communication systems. △ Less

Submitted 3 July, 2022; v1 submitted 30 June, 2022; originally announced July 2022.

Continuously Do** Bi 2 Sr 2 CaCu 2 O 8+δ into Electron-Doped Superconductor by CaH 2 Annealing Method

Authors: ** Zhao, Yu-Lin Gan, Guang Yang, Yi-Gui Zhong, Cen-Yao Tang, Fa-Zhi Yang, Giao Ngoc Phan, Qiang-Tao Sui, Zhong Liu, Gang Li, Xiang-Gang Qiu, Qing-Hua Zhang, Jie Shen, Tian Qian, Li Lu, Lei Yan, Gen-Da Gu, Hong Ding

Abstract: As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier do** is mostly determined by its oxygen content. Traditional do** methods can regulate its do** level within the range of hole do**. Here we report the first application of CaH 2 annealing method in regulating the do** level of Bi2212. By continuously controlling the anneal time, a series of different… ▽ More As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) carrier do** is mostly determined by its oxygen content. Traditional do** methods can regulate its do** level within the range of hole do**. Here we report the first application of CaH 2 annealing method in regulating the do** level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experimental results of x-ray diffraction, scanning transmission electron microscopy, resistance and Hall measurements demonstrate that the CaH 2 induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range, even switching from hole do** to electron do**. We also found evidence of a low-T c superconducting phase in the electron do** side. △ Less

Submitted 23 June, 2022; originally announced June 2022.

Comments: 7pages,3 figures and Supplementary Material 3pages,3 figures

Journal ref: Chin. Phys. Lett. 39 077403 (2022)

Stochastic gradient descent introduces an effective landscape-dependent regularization favoring flat solutions

Authors: Ning Yang, Chao Tang, Yuhai Tu

Abstract: Generalization is one of the most important problems in deep learning (DL). In the overparameterized regime in neural networks, there exist many low-loss solutions that fit the training data equally well. The key question is which solution is more generalizable. Empirical studies showed a strong correlation between flatness of the loss landscape at a solution and its generalizability, and stochast… ▽ More Generalization is one of the most important problems in deep learning (DL). In the overparameterized regime in neural networks, there exist many low-loss solutions that fit the training data equally well. The key question is which solution is more generalizable. Empirical studies showed a strong correlation between flatness of the loss landscape at a solution and its generalizability, and stochastic gradient descent (SGD) is crucial in finding the flat solutions. To understand how SGD drives the learning system to flat solutions, we construct a simple model whose loss landscape has a continuous set of degenerate (or near degenerate) minima. By solving the Fokker-Planck equation of the underlying stochastic learning dynamics, we show that due to its strong anisotropy the SGD noise introduces an additional effective loss term that decreases with flatness and has an overall strength that increases with the learning rate and batch-to-batch variation. We find that the additional landscape-dependent SGD-loss breaks the degeneracy and serves as an effective regularization for finding flat solutions. Furthermore, a stronger SGD noise shortens the convergence time to the flat solutions. However, we identify an upper bound for the SGD noise beyond which the system fails to converge. Our results not only elucidate the role of SGD for generalization they may also have important implications for hyperparameter selection for learning efficiently without divergence. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Comments: Main text: 11 pages, 3 figures; supplementary materials: 19 pages, 5 figures

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Authors: Hao Deng, Zhijun Song, Ran Gao, Tian Xia, Feng Bao, Xun Jiang, Hsiang-Sheng Ku, Zhisheng Li, Xizheng Ma, ** Qin, Hantao Sun, Chengchun Tang, Tenghui Wang, Feng Wu, Wenlong Yu, Gengyan Zhang, Xiaohang Zhang, **gwei Zhou, Xing Zhu, Yaoyun Shi, Hui-Hai Zhao, Chunqing Deng

Abstract: Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride… ▽ More Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

Authors: Lun Li, Yuyang Wu, Xiaoyang Liu, Hanzhi Ruan, Zhenghang Zhi, Jiuming Liu, Yong Zhang, Puyang Huang, Yuchen Ji, Chenjia Tang, Yumeng Yang, Renchao Che, Xufeng Kou

Abstract: The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe f… ▽ More The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications. △ Less

Submitted 1 April, 2022; v1 submitted 31 March, 2022; originally announced March 2022.

The effects of a far-infrared photon cavity field on the magnetization of a square quantum dot array

Authors: Vidar Gudmundsson, Vram Mughnetsyan, Nzar Rauf Abdullah, Chi-Shung Tang, Valeriu Moldoveanu, Andrei Manolescu

Abstract: The orbital and spin magnetization of a cavity-embedded quantum dot array defined in a GaAs heterostructure are calculated within quantum-electrodynamical density-functional theory (QEDFT). To this end a gradient-based exchange-correlation functional recently employed for atomic systems is adapted to the hosting two-dimensional electron gas (2DEG) submitted to an external perpendicular homogeneous… ▽ More The orbital and spin magnetization of a cavity-embedded quantum dot array defined in a GaAs heterostructure are calculated within quantum-electrodynamical density-functional theory (QEDFT). To this end a gradient-based exchange-correlation functional recently employed for atomic systems is adapted to the hosting two-dimensional electron gas (2DEG) submitted to an external perpendicular homogeneous magnetic field. Numerical results reveal the polarizing effects of the cavity photon field on the electron charge distribution and nontrivial changes of the orbital magnetization. We discuss its intertwined dependence on the electron number in each dot, and on the electron-photon coupling strength. In particular, the calculated dispersion of the photon-dressed electron states around the Fermi energy as a function of the electron-photon coupling strength indicates the formation of magnetoplasmon-polaritons in the dots. △ Less

Submitted 10 August, 2022; v1 submitted 21 March, 2022; originally announced March 2022.

Comments: RevTeX - pdfLaTeX, 12 pages with 9 included pdf figures

Journal ref: Phys. Rev. B 106, 115308 (2022)

Clog mitigation in a microfluidic array via pulsatile flows

Authors: Brian Dincau, Connor Tang, Emilie Dressaire, Alban Sauret

Abstract: Clogging is a common obstacle encountered during the transport of suspensions and represents a significant energy and material cost across applications, including water purification, irrigation, biopharmaceutical processing, and aquifer recharge. Pulsatile pressure-driven flows can help mitigate clogging when compared to steady flows. Here, we study experimentally the influence of the amplitude of… ▽ More Clogging is a common obstacle encountered during the transport of suspensions and represents a significant energy and material cost across applications, including water purification, irrigation, biopharmaceutical processing, and aquifer recharge. Pulsatile pressure-driven flows can help mitigate clogging when compared to steady flows. Here, we study experimentally the influence of the amplitude of pulsation $0.25\,P_0 \leq δP \leq 1.25\,P_0$, where $P_0$ is the mean pressure, and of the frequency of pulsation $10^{-3}\,{\rm Hz} \leq f \leq 10^{-1}\,{\rm Hz}$ on clog mitigation in a microfluidic array of parallel channels using a dilute suspension of colloidal particles. The array geometry is representative of a classical filter, with parallel pores that clog over time, yielding a filter cake that continues to grow and can interact with other pores. We combine flow rate measurements with direct visualizations at the pore scale to correlate the observed clogging dynamics with the changes in flow rate. We observe that all pulsatile amplitudes at $0.1$ Hz yield increased throughput compared to steady flows. The rearrangement of particles when subject to a dynamic shear environment can delay the clogging of a pore or even remove an existing clog. However, this benefit is drastically reduced at $10^{-2}$ Hz and disappears at $10^{-3}$ Hz as the pulsatile timescale becomes too large compared to the timescale associated with the clogging and the growth of the filter cakes in this system. The present study demonstrates that pulsatile flows are a promising method to delay clogging at both the pore and system scale. △ Less

Submitted 14 January, 2022; originally announced January 2022.

Enhanced ultraviolet absorption in BN monolayers caused by tunable buckling

Authors: Nzar Rauf Abdullah, Botan Jawdat Abdullah, Chi-Shung Tang, Vidar Gudmundsson

Abstract: The optical properties of a hexagonal Boron Nitride (BN) monolayer across the UV spectrum are studied by tuning its planar buckling. The strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat BN monolayer can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization by increasing the planar buckling. This gives rise to the $s$- and $p$-orbital contributions to form a density… ▽ More The optical properties of a hexagonal Boron Nitride (BN) monolayer across the UV spectrum are studied by tuning its planar buckling. The strong $σ\text{-}σ$ bond through sp$^2$ hybridization of a flat BN monolayer can be changed to a stronger $σ\text{-}π$ bond through sp$^3$ hybridization by increasing the planar buckling. This gives rise to the $s$- and $p$-orbital contributions to form a density of states around the Fermi energy, and these states dislocate to a lower energy in the presence of an increased planar buckling. Consequently, the wide band gap of a flat BN monolayer is reduced to a smaller band gap in a buckled BN monolayer enhancing its optical activity in the Deep-UV region. The optical properties such as the dielectric function, the reflectivity, the absorption, and the optical conductivity spectra are investigated. It is shown that the absorption rate can be enhanced by $(12\text{-}15)\%$ for intermediate values of planar buckling in the Deep-UV region, and $(15\text{-}20)\%$ at higher values of planar buckling in the near-UV region. Furthermore, the optical conductivity is enhanced by increased planar buckling in both the visible and the Deep-UV regions depending on the direction of the polarization of the incoming light. Our results may be useful for optoelectronic BN monolayer devices in the UV range including UV spectroscopy, deep-UV communications, and UV photodetectors. △ Less

Submitted 1 January, 2022; originally announced January 2022.

Comments: RevTeX - pdfLaTeX, 9 pages with 7 pdf-figures included