Showing 1–12 of 12 results for author: Tang, A

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

Authors: Alvin Tang, Aravindh Kumar, Marc Jaikissoon, Krishna Saraswat, H. -S. Philip Wong, Eric Pop

Abstract: Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for ba… ▽ More Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS$_2$ films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 $\mathrm{μA/μm}$ at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS$_2$ grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is $\mathrm{29 \pm 5\ cm^2V^{-1}s^{-1}}$ at $\mathrm{6.1 \times 10^{12}\ cm^{-2}}$ electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing. △ Less

Submitted 4 September, 2021; originally announced September 2021.

Journal ref: ACS Appl. Mater. Interfaces 13, 41866 (2021)

Statistical Analysis of Contacts to Synthetic Monolayer MoS2

Authors: Aravindh Kumar, Alvin Tang, H. -S. Philip Wong, Krishna Saraswat

Abstract: Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line… ▽ More Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line model (TLM) structures, before and after dielectric encapsulation. We report contact resistance values as low as 330 ohm-um, which is the lowest value reported to date. We further study the effect of Al2O3 encapsulation on variability in contact resistance and other device metrics. Finally, we note some deviations in the TLM model for short-channel devices in the back-gated configuration and discuss possible modifications to improve the model accuracy. △ Less

Submitted 20 February, 2022; v1 submitted 16 June, 2021; originally announced June 2021.

Comments: 4 pages, 5 figures, to be published in IEEE IITC 2021 conference proceedings; fixed labels in Fig 4(b) and removed blank page at the end

Sublimation Kinetics for Individual Graphite and Graphene Nano-particles (NPs): NP-to-NP Variations and Evolving Structure-Kinetics and Structure-Emissivity Relationships

Authors: Bryan A. Long, Chris Y. Lau, Daniel J. Rodriguez, Susanna An Tang, Scott L. Anderson

Abstract: A single nanoparticle (NP) mass spectrometry method was used to measure sublimation rates as a function of nanoparticle temperature (TNP) for a number of individual graphite and graphene NPs. Initially, the NP sublimation rates were ca. 400 times faster than that for bulk graphite, and there were large NP-to-NP variations. Over time, the rate slowed substantially, though remaining well above the b… ▽ More A single nanoparticle (NP) mass spectrometry method was used to measure sublimation rates as a function of nanoparticle temperature (TNP) for a number of individual graphite and graphene NPs. Initially, the NP sublimation rates were ca. 400 times faster than that for bulk graphite, and there were large NP-to-NP variations. Over time, the rate slowed substantially, though remaining well above the bulk rate. The initial activation energies (Eas) were correspondingly low and doubled as a few monolayer's worth of material were sublimed from the surfaces. The high initial rates and low Eas are attributed to large numbers of edge and other low coordination sites on the NP surfaces, and the changes are attributed to atomic-scale "smoothing" of the surface by preferential sublimation of the less stable sites. The emissivity of the NPs also changed after heating, most frequently increasing. The emissivity and sublimation rates were anti-correlated, leading to the conclusion that high densities of low-coordination sites on the NP surfaces enhances sublimation but suppresses emissivity. △ Less

Submitted 24 July, 2020; v1 submitted 18 February, 2020; originally announced February 2020.

Comments: Final version submitted to J. Am. Chem. Soc

Magnetic domain wall based synaptic and activation function generator for neuromorphic accelerators

Authors: Saima A Siddiqui, Sumit Dutta, Astera Tang, Luqiao Liu, Caroline A Ross, Marc A Baldo

Abstract: Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-base… ▽ More Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is < 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons. △ Less

Submitted 7 September, 2019; originally announced September 2019.

Comments: 24 pages, 5 figures

An XMCD study of magnetism and valence state in iron-substituted strontium titanate

Authors: Astera S. Tang, Jonathan Pelliciari, Qi Song, Qian Song, Shuai Ning, John W. Freeland, Riccardo Comin, Caroline A. Ross

Abstract: Room temperature ferromagnetism was characterized for thin films of SrTi$_{0.6}$Fe$_{0.4}$O$_{3-δ}$ grown by pulsed laser deposition on SrTiO$_{3}$ and Si substrates under different oxygen pressures and after annealing under oxygen and vacuum conditions. X-ray magnetic circular dichroism demonstrated that the magnetization originated from Fe$^{2+}$ cations, whereas Fe$^{3+}$ and Ti$^{4+}$ did not… ▽ More Room temperature ferromagnetism was characterized for thin films of SrTi$_{0.6}$Fe$_{0.4}$O$_{3-δ}$ grown by pulsed laser deposition on SrTiO$_{3}$ and Si substrates under different oxygen pressures and after annealing under oxygen and vacuum conditions. X-ray magnetic circular dichroism demonstrated that the magnetization originated from Fe$^{2+}$ cations, whereas Fe$^{3+}$ and Ti$^{4+}$ did not contribute. Films with the highest magnetic moment (0.8 μB per Fe) had the highest measured Fe$^{2+}$:Fe${^3+}$ ratio of 0.1 corresponding to the largest concentration of oxygen vacancies (δ = 0.19). Post-growth annealing treatments under oxidizing and reducing conditions demonstrated quenching and partial recovery of magnetism respectively, and a change in Fe valence states. The study elucidates the microscopic origin of magnetism in highly Fe-substituted SrTi$_{1-x}$Fe$_x$O$_{3-δ}$ perovskite oxides and demonstrates that the magnetic moment, which correlates with the relative content of Fe$^{2+}$ and Fe$^{3+}$, can be controlled via the oxygen content, either during growth or by post-growth annealing. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. Materials 3, 054408 (2019)

Counterroating incommensurate magnetic order and strong quantum fluctuations in the honeycomb layers of $\rm NaNi_2BiO_6$

Authors: A. Scheie, K. Ross, P. Peter Stavropoulos, E. Seibel, J. A. Rodriguez-Rivera, J. A. Tang, Yi Li, Hae-Young Kee, R. J. Cava, C. Broholm

Abstract: We report the magnetic structure and electronic properties of the honeycomb antiferromagnet $\rm NaNi_2BiO_{5.66}$. We find magnetic order with moments along the $c$ axis for temperatures below $T_{c1}=6.3(1)\>{\rm K}$ and then in the honeycomb plane for $T < T_{c2}=4.8(1)\>{\rm K}$ with a counterrotating pattern and an ordering wave vector ${\bf q}=(\frac{1}{3},\> \frac{1}{3},\> 0.15(1))$. Densit… ▽ More We report the magnetic structure and electronic properties of the honeycomb antiferromagnet $\rm NaNi_2BiO_{5.66}$. We find magnetic order with moments along the $c$ axis for temperatures below $T_{c1}=6.3(1)\>{\rm K}$ and then in the honeycomb plane for $T < T_{c2}=4.8(1)\>{\rm K}$ with a counterrotating pattern and an ordering wave vector ${\bf q}=(\frac{1}{3},\> \frac{1}{3},\> 0.15(1))$. Density functional theory and electron spin resonance indicate this is high-spin Ni$^{3+}$ magnetism near a high to low spin transition. The ordering wave vector, in-plane magnetic correlations, missing entropy, spin state, and superexchange pathways are all consistent with bond-dependent Kitaev-$Γ$-Heisenberg exchange interactions in $\rm NaNi_2BiO_{6-δ}$. △ Less

Submitted 24 October, 2019; v1 submitted 6 July, 2018; originally announced July 2018.

Comments: 12 pages, 11 figures, 8 pages of appendices

Journal ref: Phys. Rev. B 100, 214421 (2019)

Direct Covalent Chemical Functionalization of Unmodified Two-Dimensional Molybdenum Disulfide

Authors: Ximo S. Chu, Ahmed Yousaf, Duo O. Li, Anli A. Tang, Abhishek Debnath, Duo Ma, Alexander A. Green, Elton J. G. Santos, Qing Hua Wang

Abstract: Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) like molybdenum disulfide (MoS2) are generating significant excitement due to their unique electronic, chemical, and optical properties. Covalent chemical functionalization represents a critical tool for tuning the properties of TMDCs for use in many applications. However, the chemical inertness of semiconducting TMDCs has thu… ▽ More Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) like molybdenum disulfide (MoS2) are generating significant excitement due to their unique electronic, chemical, and optical properties. Covalent chemical functionalization represents a critical tool for tuning the properties of TMDCs for use in many applications. However, the chemical inertness of semiconducting TMDCs has thus far hindered the robust chemical functionalization of these materials. Previous reports have required harsh chemical treatments or converting TMDCs into metallic phases prior to covalent attachment. Here, we demonstrate the direct covalent functionalization of the basal planes of unmodified semiconducting MoS2 using aryl diazonium salts without any pretreatments. Our approach preserves the semiconducting properties of MoS2, results in covalent C-S bonds, is applicable to MoS2 derived from a range of different synthesis methods, and enables a range of different functional groups to be tethered directly to the MoS2 surface. Using density functional theory calculations including van der Waals interactions and atomic-scale scanning probe microscopy studies, we demonstrate a novel reaction mechanism in which cooperative interactions enable the functionalization to propagate along the MoS2 basal plane. The flexibility of this covalent chemistry employing the diverse aryl diazonium salt family is further exploited to tether active proteins to MoS2, suggesting future biological applications and demonstrating its use as a versatile and powerful chemical platform for enhancing the utility of semiconducting TMDCs △ Less

Submitted 27 February, 2018; originally announced February 2018.

Comments: To appear in Chemistry Materials (In press)

GaZn-VZn acceptor complex defect in Ga-doped ZnO

Authors: Aihua Tang, Zengxia Mei, Yaonan Hou, Lishu Liu, Vishnukanthan Venkatachalapathy, Alexander Azarov, Andrej Kuznetsov, Xiaolong Du

Abstract: Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth… ▽ More Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth conditions. The secondary ion mass spectrometry and temperature-dependent Hall-effect measurements reveal that a high density of controllable (GaZn-VZn)- is the predominant compensating defect in Ga-doped ZnO. The binding energy of this complex defect obtained from zinc self-diffusion experiments (~0.78 eV) well matches the electrical activation energy derived from the temperature-dependent electrical measurements (~0.82 eV). The compensation ratios were quantitatively calculated by energetic analysis and scattering process to further validate the compensation effect of (GaZn-VZn)- complex in Ga-doped ZnO. Meanwhile, its energy level structure was suggested based on the photoluminescence spectra, and the lifetime was achieved from the time-resolved photoluminescence measurements. The electron transitions between the (GaZn-VZn)- complex defect levels emit the light at ~650 nm with a lifetime of 10-20 nanoseconds. These findings may greatly pave the way towards novel complex defects-derived optical applications. △ Less

Submitted 22 September, 2017; originally announced September 2017.

Oxygen vacancies: The origin of n-type conductivity in ZnO

Authors: Lishu Liu, Zengxia Mei, Aihua Tang, Alexander Azarov, Andrej Kuznetsov, Qi-Kun Xue, Xiaolong Du

Abstract: Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffu… ▽ More Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately-controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n-type conductivity as well as the non-stoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials. △ Less

Submitted 17 June, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Comments: 5 figures

Journal ref: Phys. Rev. B 93, 235305 (2016)

The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites

Authors: R. K. Zheng, G. Li, Y. Yang, A. N. Tang, W. Wang, T. Qian, X. G. Li

Abstract: The effects of the cooperative Jahn-Teller effect on the crystal structure and the stability of the charge ordered (CO) state were studied by measurements of powder X-ray diffraction, resistivity, and ultrasound for Pr1-xCaxMnO3 (0.5<=x<=0.875). Powder X-ray diffraction revealed a change of the crystal structure from tetragonally compressed to tetragonally elongated orthorhombic between x=0.75 a… ▽ More The effects of the cooperative Jahn-Teller effect on the crystal structure and the stability of the charge ordered (CO) state were studied by measurements of powder X-ray diffraction, resistivity, and ultrasound for Pr1-xCaxMnO3 (0.5<=x<=0.875). Powder X-ray diffraction revealed a change of the crystal structure from tetragonally compressed to tetragonally elongated orthorhombic between x=0.75 and x=0.8 in the CO state, resulting from the crossover of the cooperative Jahn-Teller vibration mode from Q2 to Q3. The relative stiffening of the ultrasound (DeltaV/V) reflecting the magnitude of the cooperative Jahn-Teller lattice distortion in the CO state increases with increasing x from 0.5 to 0.625, reaching the largest and being almost x-independence for 0.625<x<0.8, and drops steeply with further increase of x. Coincident with the variation of the DeltaV/V with x, the stability of the CO state reflected by the magnetoresistance effect increases with increasing x from 0.5 to 0.625, reaching the most stable for 0.625<x<0.825, and becomes unstable with further increase of x. These features demonstrate that the cooperative Jahn-Teller lattice distortion is one of the key ingredients in understanding the essential physics of the CO state in manganites. △ Less

Submitted 4 March, 2004; originally announced March 2004.

Comments: 26 pages, 8 figures. To be published in Phys. Rev. B

The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites

Authors: R. K. Zheng, G. Li, A. N. Tang, Y. Yang, W. Wang, X. G. Li, Z. D. Wang, H. C. Ku

Abstract: Based on the magnetoresistance, magnetization, ultrasound, and crystallographic data, we studied the role of the cooperative Jahn-Teller effect in the charge ordered (CO) state for La1-xCaxMnO3. We found that, with increasing the fraction of Q3 mode of Jahn-Teller distortion and decreasing that of Q2 mode in the CO state, the magnetic structure evolves from CE-type to C-type and the orbital orde… ▽ More Based on the magnetoresistance, magnetization, ultrasound, and crystallographic data, we studied the role of the cooperative Jahn-Teller effect in the charge ordered (CO) state for La1-xCaxMnO3. We found that, with increasing the fraction of Q3 mode of Jahn-Teller distortion and decreasing that of Q2 mode in the CO state, the magnetic structure evolves from CE-type to C-type and the orbital ordering changes from 3d(x2-r2)/3d(y2-r2)-type to 3d(x2-z2)-type, with the strength of ferromagnetism and the phase separation tendency being suppressed. At the same time, the stability of the CO state and the cooperative Jahn-Teller lattice distortion increase. These effects imply that the cooperative Jahn-Teller effect with different vibration modes is the key ingredient in understanding the essential physics of the CO state. △ Less

Submitted 8 November, 2003; originally announced November 2003.

Comments: 10 pages, 2 figures. To appear on Applied Physics Letters

Internal friction and Jahn-Teller effect in the charge-ordered La1-xCaxMnO3 (0.5<x<0.87)

Authors: R. K. Zheng, R. X. Huang, A. N. Tang, G. Li, X. G. Li, J. N. Wei, J. P. Shui, Z. Yao

Abstract: The Jahn-Teller effect in the charge-ordered (CO) state for La1-xCaxMnO3 (0.5<x<0.87) was studied by measuring the low-temperature powder x-ray diffraction, internal friction, and shear modulus. We find that the electron-lattice interaction with the static Jahn-Teller distortion is the strongest near x=0.75 in the CO state. It was particularly observed that a crossover of the Jahn-Teller vibrati… ▽ More The Jahn-Teller effect in the charge-ordered (CO) state for La1-xCaxMnO3 (0.5<x<0.87) was studied by measuring the low-temperature powder x-ray diffraction, internal friction, and shear modulus. We find that the electron-lattice interaction with the static Jahn-Teller distortion is the strongest near x=0.75 in the CO state. It was particularly observed that a crossover of the Jahn-Teller vibration mode from Q2 to Q3 near x=0.75 induces crossovers of the crystal structure from tetragonally compressed to tetragonally elongated orthorhombic, and of the magnetic structure from CE-type to C-type near x=0.75. The experimental results give strong evidence that the Jahn-Teller effect not only plays a key role in stabilizing the CO state, but also determines the magnetic and crystal structures in the CO state for La1-xCaxMnO3. △ Less

Submitted 1 December, 2002; originally announced December 2002.

Comments: 13 pages, 3 figures, PDF

Journal ref: Appl. Phys. Lett. 81(20), 3834 (2002)