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Exact Fisher zeros and thermofield dynamics across a quantum critical point
Authors:
Yang Liu,
Songtai Lv,
Yuchen Meng,
Zefan Tan,
Erhai Zhao,
Haiyuan Zou
Abstract:
By setting the inverse temperature $β$ loose to occupy the complex plane, Michael E. Fisher showed that the zeros of the complex partition function $Z$, if approaching the real $β$ axis, reveal a thermodynamic phase transition. More recently, Fisher zeros have been used to mark the dynamical phase transition in quench dynamics. The success of Fisher zeros however seems limited, and it is unclear h…
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By setting the inverse temperature $β$ loose to occupy the complex plane, Michael E. Fisher showed that the zeros of the complex partition function $Z$, if approaching the real $β$ axis, reveal a thermodynamic phase transition. More recently, Fisher zeros have been used to mark the dynamical phase transition in quench dynamics. The success of Fisher zeros however seems limited, and it is unclear how they can be employed to shed light on quantum phase transitions or the non-unitary dynamics of open quantum systems. Here we answer this question by a comprehensive analysis of the (analytically continued) one-dimensional transverse field Ising model. We exhaust all the Fisher zeros to show that in the thermodynamic limit they congregate into a remarkably simple pattern in the form of continuous open or closed lines. These Fisher lines evolve smoothly as the coupling constant is tuned, and a qualitative change identifies the quantum critical point. By exploiting the connection between $Z$ and the thermofield double states, we obtain analytical expressions for the short- and long-time dynamics of the survival amplitude and the scaling of recurrence time at the quantum critical point. We further point out $Z$ can be realized and probed in monitored quantum circuits. The analytical results are corroborated by numerical tensor renormalization group which elevates the approach outlined here to a powerful tool for interacting quantum systems.
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Submitted 27 June, 2024;
originally announced June 2024.
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Gate Tunable Asymmetric Ozone Adsorption on Graphene
Authors:
Zhen Qi,
Wanlei Li,
Jun Cheng,
Zhongxin Guo,
Chenglong Li,
Shang Wang,
Zuoquan Tan,
Zhiting Gao,
Yongchao Wang,
Zichen Lian,
Shanshan Chen,
Yonglin He,
Zhiyong Wang,
Yapei Wang,
**song Zhang,
Yayu Wang,
Peng Cai
Abstract:
Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole do** observed in graphene indicates a strong interaction between ozone and graphene. Interest…
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Molecular adsorption is pivotal in device fabrication and material synthesis for quantum technology. However, elucidating the behavior of physisorption poses technical challenges. Here graphene with ultrahigh sensitivity was utilized to detect ozone adsorption at cryogenic temperatures. Significant hole do** observed in graphene indicates a strong interaction between ozone and graphene. Interestingly, the adsorption exhibits asymmetry with positive and negative gate voltages. The strong affinity of ozone provides a tool to modulate materials and devices, while the gate tunability of adsorption offers new insights into construction and manipulation of oxide quantum materials.
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Submitted 9 May, 2024;
originally announced May 2024.
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Electrically Switchable Circular Photogalvanic Effect in Methylammonium Lead Iodide Microcrystals
Authors:
Yuqing Zhu,
Ziyi Song,
Rodrigo Becerra Silva,
Bob Minyu Wang,
Henry Clark Travaglini,
Andrew C Grieder,
Yuan **,
Liang Z. Tan,
Dong Yu
Abstract:
We investigate the circular photogalvanic effect (CPGE) in single-crystalline methylammonium lead iodide microcrystals under a static electric field. The external electric field can enhance the magnitude of the helicity dependent photocurrent (HDPC) by two orders of magnitude and flip its sign, which we attribute to magnetic shift currents induced by the Rashba-Edelstein effect. This HDPC induced…
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We investigate the circular photogalvanic effect (CPGE) in single-crystalline methylammonium lead iodide microcrystals under a static electric field. The external electric field can enhance the magnitude of the helicity dependent photocurrent (HDPC) by two orders of magnitude and flip its sign, which we attribute to magnetic shift currents induced by the Rashba-Edelstein effect. This HDPC induced by the static electric field may be viewed as an unusually strong third-order photoresponse, which produces a current two orders of magnitude larger than second-order injection current. Furthermore, the HDPC is highly nonlocal and can be created by photoexcitation out of the device channel, indicating a spin diffusion length up to 50 $μ$m at 78 K.
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Submitted 22 March, 2024;
originally announced March 2024.
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Schrödinger cats growing up to 60 qubits and dancing in a cat scar enforced discrete time crystal
Authors:
Zehang Bao,
Shibo Xu,
Zixuan Song,
Ke Wang,
Liang Xiang,
Zitian Zhu,
Jiachen Chen,
Feitong **,
Xuhao Zhu,
Yu Gao,
Yaozu Wu,
Chuanyu Zhang,
Ning Wang,
Yiren Zou,
Ziqi Tan,
Aosai Zhang,
Zhengyi Cui,
Fanhao Shen,
Jiarun Zhong,
Tingting Li,
**feng Deng,
Xu Zhang,
Hang Dong,
Pengfei Zhang,
Yang-Ren Liu
, et al. (8 additional authors not shown)
Abstract:
Greenberger-Horne-Zeilinger (GHZ) states, as maximally entangled Schrödinger cat states, play vital roles in the foundations of quantum physics and technology, but creating and preserving these fragile states pose tremendous challenges. Discrete time crystals (DTCs), originally aimed at exploring exotic nonequilibrium quantum matters, have raised significant scientific interest, but whether this b…
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Greenberger-Horne-Zeilinger (GHZ) states, as maximally entangled Schrödinger cat states, play vital roles in the foundations of quantum physics and technology, but creating and preserving these fragile states pose tremendous challenges. Discrete time crystals (DTCs), originally aimed at exploring exotic nonequilibrium quantum matters, have raised significant scientific interest, but whether this brilliant concept can lead to true applications remains unclear. Here we propose an efficient protocol suitable for two-dimensional quantum processors, and by employing sequences of high-fidelity quantum gates, we achieve genuine GHZ entanglement at the intermediate scale with up to 60 superconducting qubits. More importantly, we take a new perspective on DTC by deterministically engineering pairwise cat eigenstates as quantum many-body scars, which shield the GHZ states from generic perturbations and enable dynamical switching during the state evolution. Our results not only nail down a direct application of DTC, but also establish engineerable many-body systems far from equilibrium as a versatile platform to protect and steer fragile but intriguing quantum entanglement.
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Submitted 16 January, 2024;
originally announced January 2024.
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Long-lived topological time-crystalline order on a quantum processor
Authors:
Liang Xiang,
Wenjie Jiang,
Zehang Bao,
Zixuan Song,
Shibo Xu,
Ke Wang,
Jiachen Chen,
Feitong **,
Xuhao Zhu,
Zitian Zhu,
Fanhao Shen,
Ning Wang,
Chuanyu Zhang,
Yaozu Wu,
Yiren Zou,
Jiarun Zhong,
Zhengyi Cui,
Aosai Zhang,
Ziqi Tan,
Tingting Li,
Yu Gao,
**feng Deng,
Xu Zhang,
Hang Dong,
Pengfei Zhang
, et al. (16 additional authors not shown)
Abstract:
Topologically ordered phases of matter elude Landau's symmetry-breaking theory, featuring a variety of intriguing properties such as long-range entanglement and intrinsic robustness against local perturbations. Their extension to periodically driven systems gives rise to exotic new phenomena that are forbidden in thermal equilibrium. Here, we report the observation of signatures of such a phenomen…
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Topologically ordered phases of matter elude Landau's symmetry-breaking theory, featuring a variety of intriguing properties such as long-range entanglement and intrinsic robustness against local perturbations. Their extension to periodically driven systems gives rise to exotic new phenomena that are forbidden in thermal equilibrium. Here, we report the observation of signatures of such a phenomenon -- a prethermal topologically ordered time crystal -- with programmable superconducting qubits arranged on a square lattice. By periodically driving the superconducting qubits with a surface-code Hamiltonian, we observe discrete time-translation symmetry breaking dynamics that is only manifested in the subharmonic temporal response of nonlocal logical operators. We further connect the observed dynamics to the underlying topological order by measuring a nonzero topological entanglement entropy and studying its subsequent dynamics. Our results demonstrate the potential to explore exotic topologically ordered nonequilibrium phases of matter with noisy intermediate-scale quantum processors.
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Submitted 8 January, 2024;
originally announced January 2024.
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Excitons and singlet fission at hybrid inorganic-organic semiconductor interfaces
Authors:
M. V. Klymenko,
L. Z. Tan,
S. P. Russo,
J. H. Cole
Abstract:
Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon su…
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Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon substrate on excitons within the crystalline tetracene layer deposited on the top of it. Our findings reveal that singlet excitons in the contact tetracene layer are situated within the continuum of unbound Wannier-Mott excitonic states in silicon, with noteworthy hybridization between these states. Consequently, in the contact tetracene layer, all singlet excitons exhibit a pronounced interlayer charge transfer character, while the triplet exciton remains confined to the tetracene layer. This makes the singlet fission effect highly improbable for the contact tetracene layer. Additionally, the presence of the silicon substrate results in a modification of the singlet-triplet gap by 144 meV. This change is solely attributed to the hybridization with excitons in silicon, which influences the exchange energy. Our results show that the dynamic dielectric screening caused by the substrate does not impact the singlet-triplet gap but alters the exciton binding energies.
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Submitted 24 October, 2023;
originally announced October 2023.
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Clustering in quasi-two-dimensional dispersions of Brownian particles with competitive interactions: Phase diagram and structural properties
Authors:
Zihan Tan,
Vania Calandrini,
Jan K. G. Dhont,
Gerhard Nägele
Abstract:
Competing short-range attractive (SA) and long range repulsive (LR) interactions have been invoked to describe colloid or protein solutions, as well as membrane proteins interactions mediated by lipid molecules. Using Langevin dynamics simulations, we determine the generalized phase diagram, the cluster shapes and size distributions of a generic Q2D dispersion of spherical SALR particles confined…
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Competing short-range attractive (SA) and long range repulsive (LR) interactions have been invoked to describe colloid or protein solutions, as well as membrane proteins interactions mediated by lipid molecules. Using Langevin dynamics simulations, we determine the generalized phase diagram, the cluster shapes and size distributions of a generic Q2D dispersion of spherical SALR particles confined to in-plane motion. SA and LR interactions are modelled by a generalized Lenard-Jones potential and a screened Coulomb potential, respectively. The microstructures of the various equilibrium and non-equilibrium phases turn out to be distinctly different from the ones observed in three-dimensional (3D) SALR systems. We discuss perturbation theory predictions for the metastable binodal line of a reference system of particles with SA interactions only, which in the Q2D-SALR phase diagram separates cluster from non-cluster phases. The transition from the high-temperature (low SA) dispersed fluid phase to the lower-temperature equilibrium cluster phase is characterised by a low-wavenumber peak of the static structure factor (corresponding to a thermal correlation length of about twice the particle diameter) featuring a distinctly smaller height ($\approx1.4$) than in 3D SALR systems. By further decreasing the temperature (increasing SA), the cluster morphology changes from disk-like shapes in the equilibrium cluster phase, to double-stranded anisotropic hexagonal cluster forms in the cluster-percolated gel phase. This transition is quantified by the hexagonal order parameter distribution function. The mean cluster size and coordination number of particles in the gel phase are insensitive to changes in the attraction strength.
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Submitted 8 October, 2023;
originally announced October 2023.
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Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Authors:
Feifei Xiang,
Lysander Huberich,
Preston A. Vargas,
Riccardo Torsi,
Jonas Allerbeck,
Anne Marie Z. Tan,
Chengye Dong,
Pascal Ruffieux,
Roman Fasel,
Oliver Gröning,
Yu-Chuan Lin,
Richard G. Hennig,
Joshua A. Robinson,
Bruno Schuler
Abstract:
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS…
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The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By map** the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.
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Submitted 4 August, 2023;
originally announced August 2023.
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Persistent spin dynamics in magnetically ordered honeycomb cobalt oxides
Authors:
** Miao,
Xianghong **,
Weiliang Yao,
Yue Chen,
Akihiro Koda,
Zhenhong Tan,
Wu Xie,
Wenhai Ji,
Takashi Kamiyama,
Yuan Li
Abstract:
In the quest to find quantum spin liquids, layered cobalt oxides Na2Co2TeO6 and Na3Co2SbO6 have been proposed as promising candidates for approximating the Kitaev honeycomb model. Yet, their suitability has been thrown into question due to observed long-range magnetic order at low temperatures and indications of easy-plane, rather than Kitaev-type, spin anisotropy. Here we use muon spin relaxation…
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In the quest to find quantum spin liquids, layered cobalt oxides Na2Co2TeO6 and Na3Co2SbO6 have been proposed as promising candidates for approximating the Kitaev honeycomb model. Yet, their suitability has been thrown into question due to observed long-range magnetic order at low temperatures and indications of easy-plane, rather than Kitaev-type, spin anisotropy. Here we use muon spin relaxation to reveal an unexpected picture: contrary to the anticipated static nature of the long-range order, the systems show prevalent spin dynamics with spatially uneven distribution and varied correlation times. This underlines that the magnetic ground states cannot be solely described by the long-range order, suggesting a significant role of quantum fluctuations. Our findings not only shed new light on the complex physics of these systems but also underscore the need for a refined approach in the search for realizable quantum spin liquids.
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Submitted 31 July, 2023;
originally announced July 2023.
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Parameterized Density Functional Models for Block Copolymer Melts
Authors:
Sulin Wang,
Yuan Chen,
Zengqiang Tan,
Keith Promislow
Abstract:
The derivation of density functional energies from the random phase approximation of self-consistent mean field theory is generalized and applied to a binary blend of diblock copolymers and homopolymers. A nonlocal transformation is incorporated into the density functional model prior to the strong segregation extrapolation step employed by Uneyama and Doi. The transformation affords a systematic…
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The derivation of density functional energies from the random phase approximation of self-consistent mean field theory is generalized and applied to a binary blend of diblock copolymers and homopolymers. A nonlocal transformation is incorporated into the density functional model prior to the strong segregation extrapolation step employed by Uneyama and Doi. The transformation affords a systematic parameterization of the free energy that preserves key structural features such as scattering structure factor. A simple choice of transformation is shown to incorporate the Tuebner and Strey microemulsion structure factor and provide a reduction to the microemulsion free energy. Without adjustable parameters, the associated phase diagrams are compared to experimental and self consistent mean field based results. A gradient descent of the free energy recovers dependence of end-state morphology on initial configurations, and identifies coexisting microstructures and transitions to two-phase behavior. Small angle x-ray data is simulated and used in classification of microphase morphology.
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Submitted 2 July, 2023;
originally announced July 2023.
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Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet
Authors:
Sihao Deng,
Olena Gomonay,
Jie Chen,
Gerda Fischer,
Lunhua He,
Cong Wang,
Qingzhen Huang,
Feiran Shen,
Zhijian Tan,
Rui Zhou,
Ze Hu,
Libor Šmejkal,
Jairo Sinova,
Wolfgang Wernsdorfer,
Christoph Sürgers
Abstract:
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpecte…
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Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials.
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Submitted 27 June, 2023;
originally announced June 2023.
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Wireless magneto-ionics: voltage control of magnetism by bipolar electrochemistry
Authors:
Zheng Ma,
Laura Fuentes-Rodriguez,
Zhengwei Tan,
Eva Pellicer,
Llibertat Abad,
Javier Herrero-Martín,
Enric Menéndez,
Nieves Casañ-Pastor,
Jordi Sort
Abstract:
Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in…
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Modulation of magnetic properties through voltage-driven ion motion and redox processes, i.e., magneto-ionics, is a unique approach to control magnetism with electric field for low-power memory and spintronic applications. So far, magneto-ionics has been achieved through direct electrical connections to the actuated material. Here we evidence that an alternative way to reach such control exists in a wireless manner. Induced polarization in the conducting material immersed in the electrolyte, without direct wire contact, promotes wireless bipolar electrochemistry, an alternative pathway to achieve voltage-driven control of magnetism based on the same electrochemical processes involved in direct-contact magneto-ionics. A significant tunability of magnetization is accomplished for cobalt nitride thin films, including transitions between paramagnetic and ferromagnetic states. Such effects can be either volatile or non-volatile depending on the electrochemical cell configuration. These results represent a fundamental breakthrough that may inspire future device designs for applications in bioelectronics, catalysis, neuromorphic computing, or wireless communications.
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Submitted 23 June, 2023;
originally announced June 2023.
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Characteristic THz-emissions induced by optically excited collective orbital modes
Authors:
Sangeeta Rajpurohit,
Christian Jooss,
Simone Techert,
Tadashi Ogitsu,
P. E. Blöchl,
L. Z. Tan
Abstract:
We study the generation of collective orbital modes, their evolution, and the characteristic non-linear optical response induced by them in a photoinduced orbital-ordered correlated oxide using real-time simulations based on an interacting multiband tight-binding (TB) model. The d-d optical transitions under femtoseconds light-pulse in a orbital-ordered state excite collective orbital modes, also…
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We study the generation of collective orbital modes, their evolution, and the characteristic non-linear optical response induced by them in a photoinduced orbital-ordered correlated oxide using real-time simulations based on an interacting multiband tight-binding (TB) model. The d-d optical transitions under femtoseconds light-pulse in a orbital-ordered state excite collective orbital modes, also known as "orbitons". The consistent inclusion of electronic interactions and the coupling between charge, spin, and lattice degrees of freedom in the TB-model provide a better understanding of the underlying mechanisms of the collective orbital modes. The dynamics of Jahn-Teller vibrational modes in the photoinduced state modify the intersite orbital interaction, which further amplifies these orbital modes. In the presence of weak ferroelectricity, the excitation of collective orbital modes induces a strong THz oscillatory photocurrent which is long-lived. This suggests an alternative way to experimentally detect quasiparticles describing such collective modes through THz-emission studies in the photoinduced state. Our study also elucidates that quasiparticle dynamics in improper ferroelectric oxides can be exploited to achieve highly interesting and non-trivial optoelectronic properties.
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Submitted 15 June, 2023;
originally announced June 2023.
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Theoretical foundations of studying criticality in the brain
Authors:
Yang Tian,
Zeren Tan,
Hedong Hou,
Guoqi Li,
Aohua Cheng,
Yike Qiu,
Kangyu Weng,
Chun Chen,
Pei Sun
Abstract:
Criticality is hypothesized as a physical mechanism underlying efficient transitions between cortical states and remarkable information processing capacities in the brain. While considerable evidence generally supports this hypothesis, non-negligible controversies persist regarding the ubiquity of criticality in neural dynamics and its role in information processing. Validity issues frequently ari…
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Criticality is hypothesized as a physical mechanism underlying efficient transitions between cortical states and remarkable information processing capacities in the brain. While considerable evidence generally supports this hypothesis, non-negligible controversies persist regarding the ubiquity of criticality in neural dynamics and its role in information processing. Validity issues frequently arise during identifying potential brain criticality from empirical data. Moreover, the functional benefits implied by brain criticality are frequently misconceived or unduly generalized. These problems stem from the non-triviality and immaturity of the physical theories that analytically derive brain criticality and the statistic techniques that estimate brain criticality from empirical data. To help solve these problems, we present a systematic review and reformulate the foundations of studying brain criticality, i.e., ordinary criticality (OC), quasi-criticality (qC), self-organized criticality (SOC), and self-organized quasi-criticality (SOqC), using the terminology of neuroscience. We offer accessible explanations of the physical theories and statistic techniques of brain criticality, providing step-by-step derivations to characterize neural dynamics as a physical system with avalanches. We summarize error-prone details and existing limitations in brain criticality analysis and suggest possible solutions. Moreover, we present a forward-looking perspective on how optimizing the foundations of studying brain criticality can deepen our understanding of various neuroscience questions.
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Submitted 8 June, 2023;
originally announced June 2023.
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Correlated Anharmonicity and Dynamic Disorder Control Carrier Transport in Halide Perovskites
Authors:
Maximilian J. Schilcher,
David J. Abramovitch,
Matthew Z. Mayers,
Liang Z. Tan,
David R. Reichman,
David A. Egger
Abstract:
Halide pervoskites are an important class of semiconducting materials which hold great promise for optoelectronic applications. In this work we investigate the relationship between vibrational anharmonicity and dynamic disorder in this class of solids. Via a multi-scale model parameterized from first-principles calculations, we demonstrate that the non-Gaussian lattice motion in halide perovskites…
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Halide pervoskites are an important class of semiconducting materials which hold great promise for optoelectronic applications. In this work we investigate the relationship between vibrational anharmonicity and dynamic disorder in this class of solids. Via a multi-scale model parameterized from first-principles calculations, we demonstrate that the non-Gaussian lattice motion in halide perovskites is microscopically connected to the dynamic disorder of overlap fluctuations among electronic states. This connection allows us to rationalize the emergent differences in temperature-dependent mobilities of prototypical MAPbI$_3$ and MAPbBr$_3$ compounds across structural phase-transitions, in agreement with experimental findings. Our analysis suggests that the details of vibrational anharmonicity and dynamic disorder can complement known predictors of electronic conductivity and can provide structure-property guidelines for the tuning of carrier transport characteristics in anharmonic semiconductors.
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Submitted 2 August, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Machine Learning Moment Tensor Potential for Modelling Dislocation and Fracture in L1$_0$-TiAl and D0$_{19}$-Ti$_3$Al Alloys
Authors:
Ji Qi,
Z. H. Aitken,
Qingxiang Pei,
Anne Marie Z. Tan,
Yunxing Zuo,
M. H. Jhon,
S. S. Quek,
T. Wen,
Zhaoxuan Wu,
Shyue ** Ong
Abstract:
Dual-phase $γ$-TiAl and $α_2$-Ti$_{3}$Al alloys exhibit high strength and creep resistance at high temperatures. However, they suffer from low tensile ductility and fracture toughness at room temperature. Experimental studies show unusual plastic behaviour associated with ordinary and superdislocations, making it necessary to gain a detailed understanding on their core properties in individual pha…
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Dual-phase $γ$-TiAl and $α_2$-Ti$_{3}$Al alloys exhibit high strength and creep resistance at high temperatures. However, they suffer from low tensile ductility and fracture toughness at room temperature. Experimental studies show unusual plastic behaviour associated with ordinary and superdislocations, making it necessary to gain a detailed understanding on their core properties in individual phases and at the two-phase interfaces. Unfortunately, extended superdislocation cores are widely dissociated beyond the length scales practical for routine first-principles density-functional theory (DFT) calculations, while extant interatomic potentials are not quantitatively accurate to reveal mechanistic origins of the unusual core-related behaviour in either phases. Here, we develop a highly-accurate moment tensor potential (MTP) for the binary Ti-Al alloy system using a DFT dataset covering a broad range of intermetallic and solid solution structures. The optimized MTP is rigorously benchmarked against both previous and new DFT calculations, and unlike existing potentials, is shown to possess outstanding accuracy in nearly all tested mechanical properties, including lattice parameters, elastic constants, surface energies, and generalized stacking fault energies (GSFE) in both phases. The utility of the MTP is further demonstrated by producing dislocation core structures largely consistent with expectations from DFT-GSFE and experimental observations. The new MTP opens the path to realistic modelling and simulations of bulk lattice and defect properties relevant to the plastic deformation and fracture processes in $γ$-TiAl and $α_2$-Ti$_{3}$Al dual-phase alloys.
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Submitted 22 May, 2023; v1 submitted 19 May, 2023;
originally announced May 2023.
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Intrinsic Origin and Enhancement of Topological Responses in Ferrimagnetic Antiperovskite Mn4N
Authors:
Temuu** Bayaraa,
Vsevolod Ivanov,
Liang Z. Tan,
Sinéad M. Griffin
Abstract:
Using first-principles calculations we investigate the intrinsic origins of the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) in antiperovskite ferrimagnet Mn4N. We predict that the AHE is significantly enhanced under both compressive and tensile strain, however, the ANE generally decreases under epitaxial strain, except for 1% compressive strain. We connect this behavior to th…
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Using first-principles calculations we investigate the intrinsic origins of the anomalous Hall effect (AHE) and the anomalous Nernst effect (ANE) in antiperovskite ferrimagnet Mn4N. We predict that the AHE is significantly enhanced under both compressive and tensile strain, however, the ANE generally decreases under epitaxial strain, except for 1% compressive strain. We connect this behavior to the evolution of the Berry curvature with strain, suggesting similar strategies for achieving large AHE and ANE changes with modest amounts of strain. Finally, we find that the non-monotonic characteristics of the AHE and ANE stem from the formation and movement of new Weyl points at the periphery of the Brillouin Zone under compressive and tensile strains.
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Submitted 5 April, 2023;
originally announced April 2023.
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Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film
Authors:
Wan-Shun Du,
Weipeng Chen,
Yangbo Zhou,
Tengfei Zhou,
Guangjian Liu,
Zongteng Zhang,
Zichuan Miao,
Hao Jia,
Song Liu,
Yue Zhao,
Zhensheng Zhang,
Tingyong Chen,
Ning Wang,
Wen Huang,
Zhen-Bing Tan,
**g-**g Chen,
Da-Peng Yu
Abstract:
In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If superconductivity also sets in, the charge transmission may become dissipationless in one direction while remaining dissipative in the opposite, thereby realizi…
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In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If superconductivity also sets in, the charge transmission may become dissipationless in one direction while remaining dissipative in the opposite, thereby realizing a superconducting diode. Through both direct-current and alternating-current measurements, we study the nonreciprocal effects in thin films of the noncentrosymmetric superconductor T$_d$-MoTe\textsubscript{2} with disorders. We observe nonreciprocal superconducting critical currents with a diode efficiency close to 20\%~, and a large magnetochiral anisotropy coefficient up to $\SI{5.9e8}{\per\tesla\per\ampere}$, under weak out-of-plane magnetic field in the millitesla range. The great enhancement of rectification efficiency under out-of-plane magnetic field is likely abscribed to the vortex ratchet effect, which naturally appears in the noncentrosymmetric superconductor with disorders. Intriguingly, unlike the finding in Rashba systems, the strongest in-plane nonreciprocal effect does not occur when the field is perpendicular to the current flow direction. We develop a phenomenological theory to demonstrate that this peculiar behavior can be attributed to the asymmetric structure of spin-orbit coupling in T$_d$-MoTe\textsubscript{2}. Our study highlights how the crystallographic symmetry critically impacts the nonreciprocal transport, and would further advance the research for designing the superconducting diode with the best performance.
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Submitted 26 October, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
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Quantum emitter formation dynamics and probing of radiation induced atomic disorder in silicon
Authors:
Wei Liu,
Vsevolod Ivanov,
Kaushalya Jhuria,
Qing Ji,
Arun Persaud,
Walid Redjem,
Jacopo Simoni,
Yertay Zhiyenbayev,
Boubacar Kante,
Javier Garcia Lopez,
Liang Z. Tan,
Thomas Schenkel
Abstract:
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers are formed more efficiently by pulsed proton irradiat…
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Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers are formed more efficiently by pulsed proton irradiation than continuous wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimizing the ratio of G-center formation to nonradiative defect accumulation. The G-centers preserve narrow linewidths of about 0.1 nm when they are generated by moderate pulsed proton fluences, while the linewidth broadens significantly as the pulsed proton fluence increases. This implies vacancy/interstitial clustering by overlap** collision cascades. Tracking G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complimentary analytical method for sensing damage accumulation. Aided by ${\it ab}$ ${\it initio}$ electronic structure calculations, we provide insight into the atomic disorder-induced inhomogeneous broadening by introducing vacancies and silicon interstitials in the vicinity of a G-center. A vacancy leads to a tensile strain and can result in either a redshift or blueshift of the G-center emission, depending on its position relative to the G-center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic redshift. High flux and tunable ion pulses enable the exploration of fundamental dynamics of radiation-induced defects as well as methods for defect engineering and qubit synthesis for quantum information processing.
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Submitted 11 February, 2023;
originally announced February 2023.
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Surface Effects on Anisotropic Photoluminescence in One-Dimensional Organic Metal Halide Hybrids
Authors:
Luke M. McClintock,
Long Yuan,
Ziyi Song,
Michael T. Pettes,
Dmitry Yarotski,
Rijan Karkee,
David A. Strubbe,
Liang Z. Tan,
Azza Ben-Akacha,
Biwu Ma,
Yunshu Shi,
Valentin Taufour,
Dong Yu
Abstract:
One-dimensional (1D) organic metal halide hybrids exhibit strongly anisotropic optical properties, highly efficient light emission, and large Stokes shift, holding promises for novel photodetection and lighting applications. However, the fundamental mechanisms governing their unique optical properties and in particular the impacts of surface effects are not understood. Here, we investigate 1D C4N2…
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One-dimensional (1D) organic metal halide hybrids exhibit strongly anisotropic optical properties, highly efficient light emission, and large Stokes shift, holding promises for novel photodetection and lighting applications. However, the fundamental mechanisms governing their unique optical properties and in particular the impacts of surface effects are not understood. Here, we investigate 1D C4N2H14PbBr4 by polarization-dependent time-averaged and time-resolved photoluminescence (TRPL) spectroscopy, as a function of photoexcitation energy. Surprisingly, we find that the emission under photoexcitation polarized parallel to the 1D metal halide chains can be either stronger or weaker than that under perpendicular polarization, depending on the excitation energy. We attribute the excitation-energy-dependent anisotropic emission to fast surface recombination, supported by first-principles calculations of optical absorption in this material. The fast surface recombination is directly confirmed by TRPL measurements, when the excitation is polarized parallel to the chains. Our comprehensive studies provide a more complete picture for a deeper understanding of the optical anisotropy in 1D organic metal halide hybrids.
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Submitted 14 December, 2022;
originally announced December 2022.
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Digital simulation of non-Abelian anyons with 68 programmable superconducting qubits
Authors:
Shibo Xu,
Zheng-Zhi Sun,
Ke Wang,
Liang Xiang,
Zehang Bao,
Zitian Zhu,
Fanhao Shen,
Zixuan Song,
Pengfei Zhang,
Wenhui Ren,
Xu Zhang,
Hang Dong,
**feng Deng,
Jiachen Chen,
Yaozu Wu,
Ziqi Tan,
Yu Gao,
Feitong **,
Xuhao Zhu,
Chuanyu Zhang,
Ning Wang,
Yiren Zou,
Jiarun Zhong,
Aosai Zhang,
Weikang Li
, et al. (9 additional authors not shown)
Abstract:
Non-Abelian anyons are exotic quasiparticle excitations hosted by certain topological phases of matter. They break the fermion-boson dichotomy and obey non-Abelian braiding statistics: their interchanges yield unitary operations, rather than merely a phase factor, in a space spanned by topologically degenerate wavefunctions. They are the building blocks of topological quantum computing. However, e…
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Non-Abelian anyons are exotic quasiparticle excitations hosted by certain topological phases of matter. They break the fermion-boson dichotomy and obey non-Abelian braiding statistics: their interchanges yield unitary operations, rather than merely a phase factor, in a space spanned by topologically degenerate wavefunctions. They are the building blocks of topological quantum computing. However, experimental observation of non-Abelian anyons and their characterizing braiding statistics is notoriously challenging and has remained elusive hitherto, in spite of various theoretical proposals. Here, we report an experimental quantum digital simulation of projective non-Abelian anyons and their braiding statistics with up to 68 programmable superconducting qubits arranged on a two-dimensional lattice. By implementing the ground states of the toric-code model with twists through quantum circuits, we demonstrate that twists exchange electric and magnetic charges and behave as a particular type of non-Abelian anyons, i.e., the Ising anyons. In particular, we show experimentally that these twists follow the fusion rules and non-Abelian braiding statistics of the Ising type, and can be explored to encode topological logical qubits. Furthermore, we demonstrate how to implement both single- and two-qubit logic gates through applying a sequence of elementary Pauli gates on the underlying physical qubits. Our results demonstrate a versatile quantum digital approach for simulating non-Abelian anyons, offering a new lens into the study of such peculiar quasiparticles.
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Submitted 11 May, 2023; v1 submitted 17 November, 2022;
originally announced November 2022.
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Coactive-Staggered Feature in Weyl Materials for Enhancing the Anomalous Nernst Conductivity
Authors:
Vsevolod Ivanov,
Ella Banyas,
Liang Z. Tan
Abstract:
Power generation through the anomalous Nernst effect in topological Weyl materials has several advantages over conventional thermoelectrics due to the transverse geometry. However, the magnitude of the anomalous Nernst conductivity (ANC) in most known materials is too small to be of practical use, and there exist few guiding principles for finding materials with optimal thermoelectric properties.…
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Power generation through the anomalous Nernst effect in topological Weyl materials has several advantages over conventional thermoelectrics due to the transverse geometry. However, the magnitude of the anomalous Nernst conductivity (ANC) in most known materials is too small to be of practical use, and there exist few guiding principles for finding materials with optimal thermoelectric properties. This work shows that the ANC is maximal when there is a ``coactive-staggered" feature in the anomalous Hall conductivity (AHC). It is shown that a minimal arrangement of two Weyl pairs leads to such a feature, and tuning the separations between the pairs controls the temperature at which the ANC is maximal. Several methods are proposed for creating such arrangements of Weyl points starting from Dirac semimetal materials. It is also demonstrated how an existing coactive-staggered AHC in a Heusler material can be exploited, by collectively tuning the positions of the Weyl points through strain to further enhance the ANC. A modest 20% amplification of the ANC is achieved, even with relatively minor changes in Weyl point positions.
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Submitted 14 November, 2022;
originally announced November 2022.
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Photo-induced phase-transitions in complex solids
Authors:
Sangeeta Rajpurohit,
Jacopo Simoni,
Liang Z. Tan
Abstract:
Photo-induced phase-transitions (PIPTs) driven by highly cooperative interactions are of fundamental interest as they offer a way to tune and control material properties on ultrafast timescales. Due to strong correlations and interactions, complex quantum materials host several fascinating PIPTs such as light-induced charge density waves and ferroelectricity and have become a desirable setting for…
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Photo-induced phase-transitions (PIPTs) driven by highly cooperative interactions are of fundamental interest as they offer a way to tune and control material properties on ultrafast timescales. Due to strong correlations and interactions, complex quantum materials host several fascinating PIPTs such as light-induced charge density waves and ferroelectricity and have become a desirable setting for studying these PIPTs. A central issue in this field is the proper understanding of the underlying mechanisms driving the PIPTs. As these PIPTs are highly nonlinear processes and often involve multiple time and length scales, different theoretical approaches are often needed to understand the underlying mechanisms. In this review, we present a brief overview of PIPTs realized in complex materials, followed by a discussion of the available theoretical methods with selected examples of recent progress in understanding of the nonequilibrium pathways of PIPTs.
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Submitted 1 November, 2022;
originally announced November 2022.
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Ballistic photocurrent driven by optical phonon modes in a polaronic ferroelectric
Authors:
Sangeeta Rajpurohit,
Tadashi Ogitsu,
Liang Z. Tan
Abstract:
We investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly-polarized light due to generation of the phonon-assisted ballistic-current in addition to the injection-current generated by electron-hole pairs. The optically excited phono…
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We investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly-polarized light due to generation of the phonon-assisted ballistic-current in addition to the injection-current generated by electron-hole pairs. The optically excited phonon modes generate an asymmetric carrier distribution that causes a strong directional ballistic-current. The ballistic-current enhances the photocurrent several times at above band-gap excitation frequencies and is sublinearly dependent on the excitation intensity. This strong phonon-assisted zero-frequency directional ballistic-current demonstrates an alternative way to boost the bulk photovoltaic effect (BPVE) in electronic ferroelectric materials with strong local electron-phonon coupling.
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Submitted 19 August, 2022;
originally announced August 2022.
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Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
Authors:
Vsevolod Ivanov,
Jacopo Simoni,
Yeonghun Lee,
Wei Liu,
Kaushalya Jhuria,
Walid Redjem,
Yertay Zhiyenbayev,
Christos Papapanos,
Wayesh Qarony,
Boubacar Kante,
Arun Persaud,
Thomas Schenkel,
Liang Z. Tan
Abstract:
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-$1/2$ T-center are…
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The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-$1/2$ T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ \textit{ab initio} density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the $D_{zz}$ component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.
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Submitted 23 September, 2022; v1 submitted 9 June, 2022;
originally announced June 2022.
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Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4
Authors:
Wen-Zheng Xu,
Chun-Guang Chu,
Zhen-Cun Pan,
**g-**g Chen,
An-Qi Wang,
Zhen-Bing Tan,
Peng-Fei Zhu,
Xing-Guo Ye,
Da-Peng Yu,
Zhi-Min Liao
Abstract:
We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior, indicating the existence of interfacial potential barriers within the heterostructure. Under an out of plane perpendicular magnetic field, a transition from negative to…
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We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior, indicating the existence of interfacial potential barriers within the heterostructure. Under an out of plane perpendicular magnetic field, a transition from negative to positive magnetoresistance (MR) is found when increasing the bias voltage. A proximity-induced superconducting gap is estimated to be 0.1meV by a pair of differential resistance dips. Moreover, the induced gap is enhanced by gradually tuning the Fermi level toward the charge neutral point by a back gate voltage, which is ascribed to the increased transport contribution of the topological surface states in MBT. Intriguingly, the induced gap exhibits an anomalous magnetic field assisted enhancement, which may originate from the spin orbit coupling and magnetic order of MBT. Our results reveal the interplay between magnetism and superconductivity in MBT, paving the way for further studies on topological superconductivity and chiral Majorana edge modes in quantum anomalous Hall insulator/superconductor hybrid systems.
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Submitted 9 June, 2022;
originally announced June 2022.
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Defect engineering of silicon with ion pulses from laser acceleration
Authors:
Walid Redjem,
Ariel J. Amsellem,
Frances I. Allen,
Gabriele Benndorf,
Jianhui Bin,
Stepan Bulanov,
Eric Esarey,
Leonard C. Feldman,
Javier Ferrer Fernandez,
Javier Garcia Lopez,
Laura Geulig,
Cameron R. Geddes,
Hussein Hijazi,
Qing Ji,
Vsevolod Ivanov,
Boubacar Kante,
Anthony Gonsalves,
Jan Meijer,
Kei Nakamura,
Arun Persaud,
Ian Pong,
Lieselotte Obst-Huebl,
Peter A. Seidl,
Jacopo Simoni,
Carl Schroeder
, et al. (5 additional authors not shown)
Abstract:
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that…
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Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and do** of semiconductors with tunable balances of ion flux, damage rates and local heating.
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Submitted 25 March, 2022;
originally announced March 2022.
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Importance of the X-ray edge singularity for the detection of relic neutrinos in the PTOLEMY project
Authors:
Zhiyang Tan,
Vadim Cheianov
Abstract:
Direct detection of relic neutrinos in a beta-decay experiment is an ambitious goal that has long been beyond the reach of available technology. One of the most challenging practical difficulties for such an experiment is managing a large amount of radioactive material without compromising the energy resolution required to distinguish useful events from the substantial beta-decay background. The P…
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Direct detection of relic neutrinos in a beta-decay experiment is an ambitious goal that has long been beyond the reach of available technology. One of the most challenging practical difficulties for such an experiment is managing a large amount of radioactive material without compromising the energy resolution required to distinguish useful events from the substantial beta-decay background. The PTOLEMY project offers an innovative solution to this problem by depositing radioactive material on graphene. While this approach is expected to address the main challenge, it introduces new issues due to the proximity of the beta decayers to a solid-state system. In this work, we focus on the effect of the shakeup of the graphene electron system caused by a beta-decay event. We calculate the distortion of the relic neutrino peaks resulting from this shakeup, analyze the impact of the distortion on the visibility of neutrino capture events, and discuss potential technological solutions to enhance the visibility of these events.
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Submitted 11 June, 2024; v1 submitted 15 February, 2022;
originally announced February 2022.
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A many-body perturbation theory approach to energy band alignment at the crystalline tetracene-silicon interface
Authors:
M. V. Klymenko,
L. Z. Tan,
S. P. Russo,
J. H. Cole
Abstract:
Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tac…
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Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, we use many-body perturbation theory in the non-self-consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line-up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van-der-Waals hybrid inorganic-organic semiconductor interfaces. In this work, we study crystalline tetracene physisorbed on the clean hydrogen-passivated 1x2 reconstructed (100) silicon surface. Using this computational approach, we find that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. We also emphasize the significant role of the exchange-correlation effects in predicting band offsets for the hybrid inorganic-organic semiconductor interfaces.
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Submitted 10 June, 2022; v1 submitted 22 December, 2021;
originally announced December 2021.
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Direct observation of enhanced electron-phonon coupling in copper nanoparticles in the warm-dense matter regime
Authors:
Quynh L. D. Nguyen,
Jacopo Simoni,
Kevin M. Dorney,
Xun Shi,
Jennifer L. Ellis,
Nathan J. Brooks,
Daniel D. Hickstein,
Amanda G. Grennell,
Sadegh Yazdi,
Eleanor E. B. Campbell,
Liang Z. Tan,
David Prendergast,
Jerome Daligault,
Henry C. Kapteyn,
Margaret M. Murnane
Abstract:
Warm-dense matter (WDM) is a highly-excited state that lies at the confluence of solids, plasmas, and liquids and that cannot be described by equilibrium theories. The transient nature of this state when created in a laboratory, as well as the difficulties in probing the strongly-coupled interactions between the electrons and the ions, make it challenging to develop a complete understanding of mat…
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Warm-dense matter (WDM) is a highly-excited state that lies at the confluence of solids, plasmas, and liquids and that cannot be described by equilibrium theories. The transient nature of this state when created in a laboratory, as well as the difficulties in probing the strongly-coupled interactions between the electrons and the ions, make it challenging to develop a complete understanding of matter in this regime. In this work, by exciting isolated ~8 nm nanoparticles with a femtosecond laser below the ablation threshold, we create uniformly-excited WDM. We then use photoelectron spectroscopy to track the instantaneous electron temperature and directly extract the strongest electron-ion coupling observed experimentally to date. By directly comparing with state-of-the-art theories, we confirm that the superheated nanoparticles lie at the boundary between hot solids and plasmas, with associated strong electron-ion coupling. This is evidenced both by the fast energy loss of electrons to ions, as well as a strong modulation of the electron temperature by acoustic oscillations in the nanoparticle. This work demonstrates a new route for experimental exploration and theoretical validation of the exotic properties of WDM.
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Submitted 28 June, 2022; v1 submitted 27 October, 2021;
originally announced October 2021.
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Twist-diameter coupling drives DNA twist changes by salt and temperature
Authors:
Chen Zhang,
Fujia Tian,
Ying Lu,
Bing Yuan,
Zhi-Jie Tan,
Xing-Hua Zhang,
Liang Dai
Abstract:
DNA deformations play crucial roles in many biological processes and material applications. During DNA deformation, DNA structural parameters often exhibit non-trivial and counterintuitive couplings, such as the twist-stretch and twist-bending couplings. Here, we reveal an unexpectedly strong negative twist-diameter coupling through the synergy of magnetic-tweezers experiments, atomistic molecular…
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DNA deformations play crucial roles in many biological processes and material applications. During DNA deformation, DNA structural parameters often exhibit non-trivial and counterintuitive couplings, such as the twist-stretch and twist-bending couplings. Here, we reveal an unexpectedly strong negative twist-diameter coupling through the synergy of magnetic-tweezers experiments, atomistic molecular dynamics simulations, and theoretical calculations. In experiments, the DNA twist angle always increases with the concentration of NaCl, KCl, or RbCl. Our simulations quantitatively reproduce salt-induced twist changes and reveal the underlying physical mechanism: the reduction of DNA diameter under a high salt concentration leads to the increase in DNA twist angle through a strong negative twist-diameter coupling. The twist-diameter coupling is mediated by two dihedral angles in DNA structure and the coupling constant is 4.5 kBT/(deg nm) for one base-pair. Based on this coupling constant, we predict the temperature-dependence of DNA twist -0.0102 deg/K per bp, which agrees with our and previous experimental results. Our analysis suggests that the twist-diameter coupling is a common driving force for salt- and temperature-induced DNA twist changes.
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Submitted 7 October, 2021;
originally announced October 2021.
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Controllable p-type Do** of 2D WSe2 via Vanadium Substitution
Authors:
Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Abstract:
Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400…
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Scalable substitutional do** of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to develo** next-generation logic and memory devices based on 2D materials. To date, do** efforts are still nascent. Here, we report scalable growth and vanadium (V) do** of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type do** via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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Submitted 28 July, 2021;
originally announced July 2021.
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Charged Vacancy Defects in Black Phosphorus Monolayer Phosphorene
Authors:
Biswas Rijal,
Anne Marie Z. Tan,
Christoph Freysoldt,
Richard G. Hennig
Abstract:
The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction sche…
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The two-dimensional semiconductor phosphorene has attracted extensive research interests for potential applications in optoelectronics, spintronics, catalysis, sensors, and energy conversion. To harness phosphorene's potential requires a better understanding of how intrinsic defects control carrier concentration, character, and mobility. Using density-functional theory and a charge correction scheme to account for the appropriate boundary conditions, we conduct a comprehensive study of the effect of structure on the formation energy, electronic structure, and charge transition level of the charged vacancy point defects in phosphorene. We predict that the neutral vacancy exhibits a 9-5 ring structure with a formation energy of 1.7 eV and transitions to a negatively charged state at a Fermi level 1.04 eV above the valence band maximum. The corresponding optical charge transitions display sizeable Frank-Condon shifts with a large Stokes shift of 0.3 eV. Phosphorene vacancies should become negatively charged in n-doped phosphorene, which would passivate the dopants and reduce the charge carrier concentration and mobility.
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Submitted 10 July, 2021;
originally announced July 2021.
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INQ, a modern GPU-accelerated computational framework for (time-dependent) density functional theory
Authors:
Xavier Andrade,
Chaitanya Das Pemmaraju,
Alexey Kartsev,
Jun Xiao,
Aaron Lindenberg,
Sangeeta Rajpurohit,
Liang Z. Tan,
Tadashi Ogitsu,
Alfredo A. Correa
Abstract:
We present INQ, a new implementation of density functional theory (DFT) and time-dependent DFT (TDDFT) written from scratch to work on graphical processing units (GPUs). Besides GPU support, INQ makes use of modern code design features and takes advantage of newly available hardware. By designing the code around algorithms, rather than against specific implementations and numerical libraries, we a…
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We present INQ, a new implementation of density functional theory (DFT) and time-dependent DFT (TDDFT) written from scratch to work on graphical processing units (GPUs). Besides GPU support, INQ makes use of modern code design features and takes advantage of newly available hardware. By designing the code around algorithms, rather than against specific implementations and numerical libraries, we aim to provide a concise and modular code. The result is a fairly complete DFT/TDDFT implementation in roughly 12,000 lines of open-source C++ code representing a modular platform for community-driven application development on emerging high-performance computing architectures for the simulation of materials.
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Submitted 7 June, 2021;
originally announced June 2021.
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A non-perturbative study of bulk photovoltaic effect enhanced by an optically induced phase transition
Authors:
Sangeeta Rajpurohit,
C. Das Pemmaraju,
Tadashi Ogitsu,
Liang Z Tan
Abstract:
Solid systems with strong correlations and interactions under light illumination have the potential for exhibiting interesting bulk photovoltaic behavior in the non-perturbative regime, which has remained largely unexplored in the past theoretical studies. We investigate the bulk photovoltaic response of a perovskite manganite with strongly coupled electron-spin-lattice dynamics, using real-time s…
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Solid systems with strong correlations and interactions under light illumination have the potential for exhibiting interesting bulk photovoltaic behavior in the non-perturbative regime, which has remained largely unexplored in the past theoretical studies. We investigate the bulk photovoltaic response of a perovskite manganite with strongly coupled electron-spin-lattice dynamics, using real-time simulations performed with a tight-binding model. The transient changes in the band structure and the photoinduced phase transitions, emerging from spin and phonon dynamics, result in a nonlinear current versus intensity behavior beyond the perturbative limit. The current rises sharply across a photoinduced magnetic phase transition, which later saturates at higher light intensities due to excited phonon and spin modes. The predicted peak photoresponsivity is orders of magnitude higher than other known ferroelectric oxides such as BiFeO$_3$. We disentangle phonon-and spin-assisted components to the ballistic photocurrent, showing that they are comparable in magnitude. Our results illustrate a promising alternative way for controlling and optimizing the bulk photovoltaic response through the photoinduced phase transitions in strongly-correlated systems.
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Submitted 24 May, 2021;
originally announced May 2021.
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Thermal fluctuations and carrier localization induced by dynamic disorder in MAPbI3 described by a first-principles based tight-binding model
Authors:
David J. Abramovitch,
Wissam A. Saidi,
Liang Z. Tan
Abstract:
Halide perovskites are strongly influenced by large amplitude anharmonic lattice fluctuations at room temperature. We develop a tight binding model for dynamically disordered MAPbI$_3$ based on density functional theory (DFT) calculations to calculate electronic structure for finite temperature crystal structures at the length scale of thermal disorder and carrier localization. The model predicts…
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Halide perovskites are strongly influenced by large amplitude anharmonic lattice fluctuations at room temperature. We develop a tight binding model for dynamically disordered MAPbI$_3$ based on density functional theory (DFT) calculations to calculate electronic structure for finite temperature crystal structures at the length scale of thermal disorder and carrier localization. The model predicts individual Hamiltonian matrix elements and band structures with high accuracy, owing to the inclusion of additional matrix elements and descriptors for non-Coulombic interactions. We apply this model to electronic structure at length and time scales inaccessible to first principles methods, finding an increase in band gap, carrier mass, and the sub-picosecond fluctuations in these quantities with increasing temperature as well as the onset of carrier localization in large supercells induced by thermal disorder at 300 K. We identify the length scale $L^*= 5$ nm as the onset of localization in the electronic structure, associated with associated with decreasing band edge fluctuations, increasing carrier mass, and Rashba splitting approaching zero.
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Submitted 19 July, 2021; v1 submitted 13 May, 2021;
originally announced May 2021.
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Hydrodynamics of Immiscible Binary Fluids with Viscosity Contrast: A multiparticle collision dynamics approach
Authors:
Zihan Tan,
Vania Calandrini,
Jan K. G. Dhont,
Gerhard Nägele,
Roland G. Winkler
Abstract:
We present a multiparticle collision dynamics (MPC) implementation of layered immiscible fluids $A$ and $B$ of different shear viscosities separated by planar interfaces. The simulated flow profile for imposed steady shear motion and the time-dependent shear stress functions are in excellent agreement with our continuum hydrodynamics results for the composite fluid. The wave-vector dependent trans…
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We present a multiparticle collision dynamics (MPC) implementation of layered immiscible fluids $A$ and $B$ of different shear viscosities separated by planar interfaces. The simulated flow profile for imposed steady shear motion and the time-dependent shear stress functions are in excellent agreement with our continuum hydrodynamics results for the composite fluid. The wave-vector dependent transverse velocity auto-correlation functions (TVAF) in the bulk-fluid regions of the layers decay exponentially, and agree with those of single-phase isotropic MPC fluids. In addition, we determine the hydrodynamic mobilities of an embedded colloidal sphere moving steadily parallel or transverse to a fluid-fluid interface, as functions of the distance from the interface. The obtained mobilities are in good agreement with hydrodynamic force multipoles calculations, for a no-slip sphere moving under cree** flow conditions near a clean, ideally flat interface. The proposed MPC fluid-layer model can be straightforwardly implemented, and it is computationally very efficient. Yet, owing to the spatial discretization inherent to the MPC method, the model can not reproduce all hydrodynamic features of an ideally flat interface between immiscible fluids.
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Submitted 5 September, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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Electronegative metal dopants improve switching consistency in Al2O3 resistive switching devices
Authors:
Zheng Jie Tan,
Vrindaa Somjit,
Cigdem Toparli,
Bilge Yildiz,
Nicholas Fang
Abstract:
Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this study, we show that do** an oxide electrolyte, Al2O3, with electronegative metals makes resistive switching significantly more reproducible, surpassing t…
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Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this study, we show that do** an oxide electrolyte, Al2O3, with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. The underlying mechanism is the ease of creating oxygen vacancies in the vicinity of electronegative dopants, due to the capture of the associated electrons by dopant mid-gap states, and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. We validate this theory experimentally by implanting multiple dopants over a range of electronegativities, and find superior repeatability and yield with highly electronegative metals, Au, Pt and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.
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Submitted 2 May, 2021; v1 submitted 27 April, 2021;
originally announced April 2021.
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Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe
Authors:
Yang Wang,
Yuting Qian,
Meng Yang,
Hongxiang Chen,
Cong Li,
Zhiyun Tan,
Yongqing Cai,
Wenjuan Zhao,
Shunye Gao,
Ya Feng,
Shiv Kumar,
Eike F. Schwier,
Lin Zhao,
Hongming Weng,
Youguo Shi,
Gang Wang,
Youting Song,
Yaobo Huang,
Kenya Shimada,
Zuyan Xu,
X. J. Zhou,
Guodong Liu
Abstract:
The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate t…
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The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.
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Submitted 26 February, 2021;
originally announced February 2021.
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Ultrafast optical melting of trimer superstructure in layered 1T'-TaTe2
Authors:
Khalid M. Siddiqui,
Daniel B. Durham,
Frederick Cropp,
Colin Ophus,
Sangeeta Rajpurohit,
Yanglin Zhu,
Johan D. Carlström,
Camille Stavrakas,
Zhiqiang Mao,
Archana Raja,
Pietro Musumeci,
Liang Z. Tan,
Andrew M. Minor,
Daniele Filippetto,
Robert A. Kaindl
Abstract:
Quasi-two-dimensional transition-metal dichalcogenides are a key platform for exploring emergent nanoscale phenomena arising from complex interactions. Access to the underlying degrees-of-freedom on their natural time scales motivates the use of advanced ultrafast probes sensitive to self-organised atomic-scale patterns. Here, we report the first ultrafast investigation of TaTe2, which exhibits un…
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Quasi-two-dimensional transition-metal dichalcogenides are a key platform for exploring emergent nanoscale phenomena arising from complex interactions. Access to the underlying degrees-of-freedom on their natural time scales motivates the use of advanced ultrafast probes sensitive to self-organised atomic-scale patterns. Here, we report the first ultrafast investigation of TaTe2, which exhibits unique charge and lattice trimer order characterised by a transition upon cooling from stripe-like chains into a $(3 \times 3)$ superstructure of trimer clusters. Utilising MeV-scale ultrafast electron diffraction, we capture the photo-induced TaTe2 structural dynamics -- exposing a rapid $\approx\!1.4$ ps melting of its low-temperature ordered state followed by recovery via thermalisation into a hot cluster superstructure. Density-functional calculations indicate that the initial quench is triggered by intra-trimer Ta charge transfer which destabilises the clusters, unlike melting of charge density waves in other TaX2 compounds. Our work paves the way for further exploration and ultimately rapid optical and electronic manipulation of trimer superstructures.
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Submitted 9 November, 2021; v1 submitted 7 September, 2020;
originally announced September 2020.
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Layer Edge States Stabilized by Internal Electric Fields in Two-dimensional Hybrid Perovskites
Authors:
Jisook Hong,
David Prendergast,
Liang Z. Tan
Abstract:
Two-dimensional (2D) organic-inorganic hybrid perovskites have been intensively explored for recent years, due to their tunable band gaps and exciton binding energies, and increased stability with respect to three-dimensional (3D) hybrid perovskites. There were fascinating experimental observations suggesting the existence of localized edge states in 2D hybrid perovskites which facilitate extremel…
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Two-dimensional (2D) organic-inorganic hybrid perovskites have been intensively explored for recent years, due to their tunable band gaps and exciton binding energies, and increased stability with respect to three-dimensional (3D) hybrid perovskites. There were fascinating experimental observations suggesting the existence of localized edge states in 2D hybrid perovskites which facilitate extremely efficient electron-hole dissociation and long carrier lifetimes. The observations and explanations of the edge states are not quite converging implying that there can be multiple origins for the edge state formation. Using first principles calculations, we demonstrate that layer edge states are stabilized by internal electric fields created by polarized molecular alignment of organic cations in 2D hybrid perovskites when they are two layers or thicker. Our study gives a simple physical explanation of the edge state formation, and it will pave the way for designing and manipulating layer edge states for optoelectronic applications.
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Submitted 26 August, 2020;
originally announced August 2020.
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Temporal Evolution of Self-Assembled Lead Halide Perovskite Nanocrystal Superlattices: Effects on Photoluminescence and Energy Transfer
Authors:
Dmitry Baranov,
Antonio Fieramosca,
Ruo Xi Yang,
Laura Polimeno,
Giovanni Lerario,
Stefano Toso,
Carlo Giansante,
Milena De Giorgi,
Liang Z. Tan,
Daniele Sanvitto,
Liberato Manna
Abstract:
Excitonic/electronic coupling and cooperative interactions in self-assembled lead halide perovskite nanocrystals were reported to give rise to a collective low energy emission peak with accelerated dynamics. Here we report that similar spectroscopic features could appear as a result of the nanocrystal reactivity within the self-assembled superlattices. This is demonstrated by using CsPbBr3 nanocry…
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Excitonic/electronic coupling and cooperative interactions in self-assembled lead halide perovskite nanocrystals were reported to give rise to a collective low energy emission peak with accelerated dynamics. Here we report that similar spectroscopic features could appear as a result of the nanocrystal reactivity within the self-assembled superlattices. This is demonstrated by using CsPbBr3 nanocrystal superlattices under room temperature and cryogenic micro-photoluminescence spectroscopy. It is shown that kee** such structures under vacuum, a gradual contraction of the superlattices and subsequent coalescence of the nanocrystals occurs over several days. As a result, a narrow, low energy emission peak is observed at 4 K with a concomitant shortening of the photoluminescence lifetime due to the energy transfer between nanocrystals. When exposed to air, self-assembled CsPbBr3 nanocrystals develop bulk-like CsPbBr3 particles on top of the superlattices. At 4 K, these particles produce a distribution of narrow, low energy emission peaks with short lifetimes and excitation fluence-dependent, oscillatory decays, resembling the features of superfluorescence. Overall, the reactivity of CsPbBr3 nanocrystals dramatically alters the emission of their assemblies, which should not be overlooked when studying collective optoelectronic properties nor confused with superfluorescence effects.
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Submitted 6 August, 2020;
originally announced August 2020.
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Ultrafast spin-nematic and ferroelectric phase transitions induced by femto-second light pulses
Authors:
Sangeeta Rajpurohit,
Liang Z. Tan,
Christian Jooss,
P. E. Blöchl
Abstract:
Optically-induced phase transitions of the manganite $\rm Pr_{1/3}Ca_{2/3}MnO_3$ have been simulated using a model Hamiltonian, that captures the dynamics of strongly correlated charge, orbital, lattice, and spin degrees of freedom. Its parameters have been extracted from first-principles calculations. Beyond a critical intensity of a femto-second light pulse, the material undergoes ultra-fast and…
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Optically-induced phase transitions of the manganite $\rm Pr_{1/3}Ca_{2/3}MnO_3$ have been simulated using a model Hamiltonian, that captures the dynamics of strongly correlated charge, orbital, lattice, and spin degrees of freedom. Its parameters have been extracted from first-principles calculations. Beyond a critical intensity of a femto-second light pulse, the material undergoes ultra-fast and non-thermal magnetic phase transition from a non-collinear to collinear antiferromagnetic phases. The light-pulse excites selectively either a spin-nematic or a ferroelectric phase depending on the light-polarization. The behavior can be traced to an optically induced ferromagnetic coupling between Mn-trimers, i.e. polarons which are delocalized over three Mn-sites. The polarization guides the polymerization of the polaronic crystal into distinct patterns of ferromagnetic chains determining the target phase.
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Submitted 28 November, 2020; v1 submitted 29 July, 2020;
originally announced July 2020.
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Phonon-Assisted Ballistic Current From First Principles Calculations
Authors:
Zhenbang Dai,
Aaron M. Schankler,
Lingyuan Gao,
Liang Z. Tan,
Andrew M. Rappe
Abstract:
The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In t…
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The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In this letter, we use a perturbative approach to derive a formula for the ballistic current resulting from the intrinsic electron-phonon scattering in a form amenable to first-principles calculation. We then implement the theory and calculate the ballistic current of the prototypical BPVE material \ch{BaTiO3} using quantum-mechanical density functional theory. The magnitude of the ballistic current is comparable to that of shift current, and the total spectrum (shift plus ballistic) agrees well with the experimentally measured photocurrents. Furthermore, we show that the ballistic current is sensitive to structural change, which could benefit future photovoltaic materials design.
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Submitted 13 December, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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Thermoelectric current in a graphene Cooper pair splitter
Authors:
Z. B. Tan,
A. Laitinen,
N. S. Kirsanov,
A. Galda,
M. Haque,
A. Savin,
D. S. Golubev,
V. M. Vinokur,
G. B. Lesovik,
P. J. Hakonen
Abstract:
Thermoelectric effect generating electricity from thermal gradient and vice versa appears in numerous generic applications. Recently, an original prospect of thermoelectricity arising from the nonlocal Cooper pair splitting (CPS) and the elastic co-tunneling (EC) in hybrid normal metal-superconductor-normal metal (NSN) structures was foreseen. Here we demonstrate experimentally the existence of no…
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Thermoelectric effect generating electricity from thermal gradient and vice versa appears in numerous generic applications. Recently, an original prospect of thermoelectricity arising from the nonlocal Cooper pair splitting (CPS) and the elastic co-tunneling (EC) in hybrid normal metal-superconductor-normal metal (NSN) structures was foreseen. Here we demonstrate experimentally the existence of non-local Seebeck effect in a graphene-based CPS device comprising two quantum dots connected to an aluminum superconductor and theoretically validate the observations. This non-local Seebeck effect offers an efficient tool for producing entangled electrons.
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Submitted 29 May, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections
Authors:
Anne Marie Z. Tan,
Christoph Freysoldt,
Richard G. Hennig
Abstract:
Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizi…
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Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the potential of these materials for electronic devices requires a better understanding of how defects control the carrier concentration, character, and mobility. Utilizing a correction scheme developed by Freysoldt and Neugebauer to ensure the appropriate electrostatic boundary conditions for charged defects in 2D materials, we perform density functional theory calculations to compute formation energies and charge transition levels associated with sulfur vacancies in monolayer and layered bulk MoS$_2$. We investigate the convergence of these defect properties with respect to vacuum spacing, in-plane supercell dimensions, and different levels of theory. We also analyze the electronic structures of the defects in different charge states to gain insights into the effect of defects on bonding and magnetism. We predict that both vacancy structures undergo a Jahn-Teller distortion, which helps stabilize the sulfur vacancy in the $-1$ charged state.
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Submitted 7 April, 2020;
originally announced April 2020.
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Origin of magnetovolume effect in a cobaltite
Authors:
** Miao,
Zhijian Tan,
Sanghyun Lee,
Yoshihisa Ishikawa,
Shuki Torii,
Masao Yonemura,
Akihiro Koda,
Kazuki Komatsu,
Shinichi Machida,
Asami Sano-Furukawa,
Takanori Hattori,
Xiaohuan Lin,
Kuo Li,
Takashi Mochiku,
Ryosuke Kikuchi,
Chizuru Kawashima,
Hiroki Takahashi,
Qingzhen Huang,
Shinichi Itoh,
Ryosuke Kadono,
Yingxia Wang,
Feng Pan,
Kunihiko Yamauchi,
Takashi Kamiyama
Abstract:
The layered perovskite PrBaCo2O5.5+x demonstrates a strong negative thermal expansion (NTE) which holds potential for being fabricated into composites with zero thermal expansion. The NTE was found to be intimately associated with the spontaneous magnetic ordering, known as magnetovolume effect (MVE). Here we report with compelling evidences that the continuous-like MVE in PrBaCo2O5.5+x is intrins…
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The layered perovskite PrBaCo2O5.5+x demonstrates a strong negative thermal expansion (NTE) which holds potential for being fabricated into composites with zero thermal expansion. The NTE was found to be intimately associated with the spontaneous magnetic ordering, known as magnetovolume effect (MVE). Here we report with compelling evidences that the continuous-like MVE in PrBaCo2O5.5+x is intrinsically of discontinuous character, originating from an magnetoelectric transition from an antiferromagnetic insulating large-volume (AFILV) phase to a ferromagnetic metallic small-volume (FMSV) phase. Furthermore, the magnetoelectric effect (ME) shows high sensitivity to multiple external stimuli such as temperature, carrier do**, hydrostatic pressure, magnetic field etc. In contrast to the well-known ME such as colossal magnetoresistance and multiferroic effect which involve symmetry breaking of crystal structure, the ME in the cobaltite is purely isostructural. Our discovery provides a new pathway to realizing the ME as well as the NTE, which may find applications in new techniques.
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Submitted 22 June, 2020; v1 submitted 17 March, 2020;
originally announced March 2020.
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Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces
Authors:
Liqin Zhou,
Zhiyun Tan,
Dayu Yan,
Zhong Fang,
Youguo Shi,
Hongming Weng
Abstract:
Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magnetic structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2…
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Based on the first-principles calculations and theoretical analysis, we investigate the electronic structures, topological phase transition (TPT) and topological properties of layered magnetic compound MnSb2Te4. It has the similar crystal and magnetic structure as the magnetic topological insulator MnBi2Te4. We find that when the spin-orbit coupling (SOC) is considered, the band structure of MnSb2Te4 in antiferromagnetic (AFM) state has no band inversion at Γ. This is due to the SOC strength of Sb is less than that of Bi. The band inversion can be realized by increasing the SOC of Sb by 0.3 times, which drives MnSb2Te4 from a trivial AFM insulator to an AFM topological insulator (TI) or axion insulator. Uniaxial compressive strain along the layer stacking direction is another way to control the band inversion. The interlayer distance shorten by 5% is needed to drive the similar TPT. For the ferromagnetic (FM) MnSb2Te4 with experimental crystal structure, it is a normal FM insulator. The band inversion can happen when SOC is enhanced by 0.1 times or the interlayer distance is decreased by more than 1%. Thus, FM MnSb2Te4 can be tuned to be the simplest type-I Weyl semimetal with only one pair of Weyl nodes on the three-fold rotational axis. These two Weyl nodes are projected onto (1-10) surface with one Fermi arc connecting them.
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Submitted 14 March, 2020;
originally announced March 2020.
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Layer Construction of Topological Crystalline Insulator LaSbTe
Authors:
Yuting Qian,
Zhiyun Tan,
Tan Zhang,
Jiacheng Gao,
Zhijun Wang,
Zhong Fang,
Chen Fang,
Hongming Weng
Abstract:
Topological crystalline insulator (TCI) is one of the symmetry-protected topological states. Any TCI can be deformed into a simple product state of several decoupled two-dimensional (2D) topologically nontrivial layers in its lattice respecting its crystalline symmetries called the layer construction (LC) limit. In this work, based on first-principles calculations we have revealed that both tetrag…
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Topological crystalline insulator (TCI) is one of the symmetry-protected topological states. Any TCI can be deformed into a simple product state of several decoupled two-dimensional (2D) topologically nontrivial layers in its lattice respecting its crystalline symmetries called the layer construction (LC) limit. In this work, based on first-principles calculations we have revealed that both tetragonal LaSbTe (t-LaSbTe) and orthorhombic LaSbTe (o-LaSbTe) can be interpreted as stacking of 2D topological insulators in each lattice space. The structural phase transition from t-LaSbTe to o-LaSbTe due to soft phonon modes demonstrates how the real space change can lead to the modification of topological states. Their symmetry-based indicators and topological invariants have been analyzed based on LC. We propose that LaSbTe is an ideal example demonstrating the LC paradigm, which bridges the crystal structures in real space to the band topology in momentum space.
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Submitted 18 May, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
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Hanbury Brown and Twiss Exchange Correlations in Graphene Box
Authors:
Teemu Elo,
Zhenbing Tan,
Ciprian Padurariu,
Fabian Duerr,
Dmitry S. Golubev,
Gordey B. Lesovik,
Pertti Hakonen
Abstract:
Quadratic detection in linear mesoscopic transport systems produces cross terms that can be viewed as interference signals reflecting statistical properties of charge carriers. In electronic systems these cross term interferences arise from exchange effects due to Pauli principle. Here we demonstrate fermionic Hanbury Brown and Twiss (HBT) exchange phenomena due to indistinguishability of charge c…
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Quadratic detection in linear mesoscopic transport systems produces cross terms that can be viewed as interference signals reflecting statistical properties of charge carriers. In electronic systems these cross term interferences arise from exchange effects due to Pauli principle. Here we demonstrate fermionic Hanbury Brown and Twiss (HBT) exchange phenomena due to indistinguishability of charge carriers in a diffusive graphene system. These exchange effects are verified using current-current cross correlations in combination with regular shot noise (autocorrelation) experiments at microwave frequencies. Our results can be modeled using semiclassical analysis for a square-shaped metallic diffusive conductor, including contributions from contact transparency. The experimentally determined HBT exchange factor values lie between the calculated ones for coherent and hot electron transport.
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Submitted 11 September, 2019;
originally announced September 2019.