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Bipolarized Weyl semimetals and quantum crystal valley Hall effect in two-dimensional altermagnetic materials
Authors:
Chao-Yang Tan,
Ze-Feng Gao,
Huan-Cheng Yang,
Kai Liu,
Peng-Jie Guo,
Zhong-Yi Lu
Abstract:
Magnetism and topology are two major areas of condensed matter physics. The combination of magnetism and topology gives rise to more novel physical effects, which have attracted strongly theoretical and experimental attention. Recently, the concept of altermagnetism has been introduced, characterized by a dual nature: real-space antiferromagnetism and reciprocal-space anisotropic spin polarization…
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Magnetism and topology are two major areas of condensed matter physics. The combination of magnetism and topology gives rise to more novel physical effects, which have attracted strongly theoretical and experimental attention. Recently, the concept of altermagnetism has been introduced, characterized by a dual nature: real-space antiferromagnetism and reciprocal-space anisotropic spin polarization. The amalgamation of altermagnetism with topology may lead to the emergence of previously unobserved topological phases and the associated physical effects. In this study, utilizing a four-band lattice model that incorporates altermagnetism and spin group symmetry, we demonstrate that type-I, type-II, and type-III bipolarized Weyl semimetals can exist in altermagnetic systems. Through the first-principles electronic structure calculations, we predict four ideal two-dimensional type-I altermagnetic bipolarized Weyl semimetals Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ (Z=S,Se,Te). More significantly, we introduce the quantum crystal valley Hall effect, a phenomenon achievable in three of these materials namely Fe$_2$WTe$_4$, Fe$_2$MoS$_4$, and Fe$_2$MoTe$_4$, when spin-orbit coupling is considered. Furthermore, these materials have the potential to transition from a quantum crystal valley Hall phase to a Chern insulator phase under strain. In contrast, Fe$_2$MoSe$_4$ remains to be a Weyl semimetal under spin-orbit coupling but is distinguished by possessing only a single pair of Weyl points. Additionally, the position, polarization, and number of Weyl points in Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ can be manipulated by adjusting the direction of the Néel vector. Consequently, Fe$_2$WTe$_4$ and Fe$_2$MoZ$_4$ emerge as promising experimental platforms for investigating the distinctive physical attributes of various altermagnetic topological phases.
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Submitted 24 June, 2024;
originally announced June 2024.
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Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals
Authors:
Weiyao Zhao,
Chi Xuan Trang,
Qile Li,
Lei Chen,
Zengji Yue,
Abdulhakim Bake,
Cheng Tan,
Lan Wang,
Mitchell Nancarrow,
Mark Edmonds,
David Cortie,
Xiaolin Wang
Abstract:
Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-do** strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both tran…
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Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-do** strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both transition metal doped TI (high ferromagnetic ordering temperature and observed QAHE), and rare-earth doped TI (large magnetic moments and significant spin orbit coupling). In the as-grown single crystals, clear evidences of ferromagnetic ordering were observed. The angle resolve photoemission spectroscopy indicate the ferromagnetism opens a 44 meV band gap at surface Dirac point. Moreover, the carrier mobility at 3 K is ~ 7400 cm2/Vs, and we thus observed an ultra-strong Shubnikov-de Haas oscillation in the longitudinal resistivity, as well as the Hall steps in transverse resistivity below 14 T. Our transport and angular resolved photoemission spectroscopy results suggest that the rare-earth and transition metal co-do** in Bi2Se3 system is a promising avenue implement the quantum anomalous Hall effect, as well as harnessing the massive Dirac fermion in electrical devices.
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Submitted 13 June, 2024;
originally announced June 2024.
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Entanglement parity effects in the Kane-Fisher problem
Authors:
Chunyu Tan,
Yuxiao Hang,
Stephan Haas,
Hubert Saleur
Abstract:
We study the entanglement of a segment of length $\ell$ in an XXZ chain with one free extremity and the other connected to the rest of the system with a weak bond. We find that the von-Neumann entropy exhibits terms of order $O(1)$ with strong parity effects, that probe the physics associated with the weakened bond and its behavior under the RG (Kane Fisher problem). In contrast with the XX case s…
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We study the entanglement of a segment of length $\ell$ in an XXZ chain with one free extremity and the other connected to the rest of the system with a weak bond. We find that the von-Neumann entropy exhibits terms of order $O(1)$ with strong parity effects, that probe the physics associated with the weakened bond and its behavior under the RG (Kane Fisher problem). In contrast with the XX case studied previously the entropy difference $δS\equiv S^e-S^o$ gives rise now to a "resonance" curve which depends on the product $\ell T_B$, with $1/T_B$ a characteristic length scale akin to the Kondo length in Kondo problems. The problem is studied both numerically using DMRG and analytically near the healed and split fixed points. Interestingly - and in contrast with what happens in other impurity problems- $δS$ can, at least at lowest order, be tackled by conformal perturbation theory.
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Submitted 14 May, 2024;
originally announced May 2024.
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Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices
Authors:
Zhongzhong Luo,
Zhihao Yu,
Xiangqian Lu,
Wei Niu,
Yao Yu,
Yu Yao,
Fuguo Tian,
Chee Leong Tan,
Huabin Sun,
Li Gao,
Wei Qin,
Yong Xu,
Qiang Zhao,
Xiang-Xiang Song
Abstract:
Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electro…
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Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to induce defects at the interfaces. Meanwhile, the difficulties in picking up FM metals with strong adhesion and in achieving conductance match between FM electrodes and spin transport channels make it challenging to fabricate high-quality 2D spintronic devices using metal transfer techniques. Here, we report a solvent-free magnetic electrode transfer technique that employs a graphene layer to assist in the transfer of FM metals. It also serves as part of the FM electrode after transfer for optimizing spin injection, which enables the realization of spin valves with excellent performance based on various 2D materials. In addition to two-terminal devices, we demonstrate that the technique is applicable for four-terminal spin valves with nonlocal geometry. Our results provide a promising future of realizing 2D spintronic applications using the developed magnetic electrode transfer technique.
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Submitted 11 May, 2024;
originally announced May 2024.
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Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect
Authors:
**gyue Wang,
Junwei Huang,
Daniel Kaplan,
Xuehan Zhou,
Congwei Tan,
**g Zhang,
Gangjian **,
Xuzhong Cong,
Yongchao Zhu,
Xiaoyin Gao,
Yan Liang,
Huakun Zuo,
Zengwei Zhu,
Ruixue Zhu,
Ady Stern,
Hongtao Liu,
Peng Gao,
Binghai Yan,
Hongtao Yuan,
Hailin Peng
Abstract:
In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, w…
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In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on ab initio band structures of Bi2O2Se thin films, we can ascribe the absence of odd-integer states in thicker films to the hidden Rasbha effect, where the local inversion symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one unit cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.
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Submitted 28 June, 2024; v1 submitted 31 March, 2024;
originally announced April 2024.
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Unified Differentiable Learning of Electric Response
Authors:
Stefano Falletta,
Andrea Cepellotti,
Anders Johansson,
Chuin Wei Tan,
Albert Musaelian,
Cameron J. Owen,
Boris Kozinsky
Abstract:
Predicting response of materials to external stimuli is a primary objective of computational materials science. However, current methods are limited to small-scale simulations due to the unfavorable scaling of computational costs. Here, we implement an equivariant machine-learning framework where response properties stem from exact differential relationships between a generalized potential functio…
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Predicting response of materials to external stimuli is a primary objective of computational materials science. However, current methods are limited to small-scale simulations due to the unfavorable scaling of computational costs. Here, we implement an equivariant machine-learning framework where response properties stem from exact differential relationships between a generalized potential function and applied external fields. Focusing on responses to electric fields, the method predicts electric enthalpy, forces, polarization, Born charges, and polarizability within a unified model enforcing the full set of exact physical constraints, symmetries and conservation laws. Through application to $α$-SiO$_2$, we demonstrate that our approach can be used for predicting vibrational and dielectric properties of materials, and for conducting large-scale dynamics under arbitrary electric fields at unprecedented accuracy and scale. We apply our method to ferroelectric BaTiO$_3$ and capture the temperature-dependence and time evolution of hysteresis, revealing the underlying microscopic mechanisms of nucleation and growth that govern ferroelectric domain switching.
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Submitted 7 June, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
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Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes
Authors:
Cheng Tan,
Mingxun Deng,
Yuanjun Yang,
Linlin An,
Weifeng Ge,
Sultan Albarakati,
Majid Panahandeh-Fard,
James Partridge,
Dimitrie Culcer,
Bin Lei,
Tao Wu,
Xiangde Zhu,
Mingliang Tian,
Xianhui Chen,
Rui-Qiang Wang,
Lan Wang
Abstract:
As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance.…
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As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque.
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Submitted 25 March, 2024;
originally announced March 2024.
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Scaling Relations of Spectrum Form Factor and Krylov Complexity at Finite Temperature
Authors:
Chengming Tan,
Zhiyang Wei,
Ren Zhang
Abstract:
In the study of quantum chaos diagnostics, considerable attention has been attributed to the Krylov complexity and spectrum form factor (SFF) for systems at infinite temperature. These investigations have unveiled universal properties of quantum chaotic systems. By extending the analysis to include the finite temperature effects on the Krylov complexity and SFF, we demonstrate that the Lanczos coe…
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In the study of quantum chaos diagnostics, considerable attention has been attributed to the Krylov complexity and spectrum form factor (SFF) for systems at infinite temperature. These investigations have unveiled universal properties of quantum chaotic systems. By extending the analysis to include the finite temperature effects on the Krylov complexity and SFF, we demonstrate that the Lanczos coefficients $b_n$, which are associated with the Wightman inner product, display consistency with the universal hypothesis presented in PRX 9, 041017 (2019). This result contrasts with the behavior of Lanczos coefficients associated with the standard inner product. Our results indicate that the slope $α$ of the $b_n$ is bounded by $πk_BT$, where $k_B$ is the Boltzmann constant and $T$ the temperature. We also investigate the SFF, which characterizes the two-point correlation of the spectrum and encapsulates an indicator of ergodicity denoted by $g$ in chaotic systems. Our analysis demonstrates that as the temperature decreases, the value of $g$ decreases as well. Considering that $α$ also represents the operator growth rate, we establish a quantitative relationship between ergodicity indicator and Lanczos coefficients slope. To support our findings, we provide evidence using the Gaussian orthogonal ensemble and a random spin model. Our work deepens the understanding of the finite temperature effects on Krylov complexity, SFF, and the connection between ergodicity and operator growth.
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Submitted 19 January, 2024;
originally announced January 2024.
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Generalized Spectral Form Factor in Random Matrix Theory
Authors:
Zhiyang Wei,
Chengming Tan,
Ren Zhang
Abstract:
The spectral form factor (SFF) plays a crucial role in revealing the statistical properties of energy level distributions in complex systems. It is one of the tools to diagnose quantum chaos and unravel the universal dynamics therein. The definition of SFF in most literature only encapsulates the two-level correlation. In this manuscript, we extend the definition of SSF to include the high-order c…
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The spectral form factor (SFF) plays a crucial role in revealing the statistical properties of energy level distributions in complex systems. It is one of the tools to diagnose quantum chaos and unravel the universal dynamics therein. The definition of SFF in most literature only encapsulates the two-level correlation. In this manuscript, we extend the definition of SSF to include the high-order correlation. Specifically, we introduce the standard deviation of energy levels to define correlation functions, from which the generalized spectral form factor (GSFF) can be obtained by Fourier transforms. GSFF provides a more comprehensive knowledge of the dynamics of chaotic systems. Using random matrices as examples, we demonstrate new dynamics features that are encoded in GSFF. Remarkably, the GSFF is complex, and both the real and imaginary parts exhibit universal dynamics. For instance, in the two-level correlated case, the real part of GSFF shows a dip-ramp-plateau structure akin to the conventional counterpart, and the imaginary part for different system sizes converges in the long time limit. For the two-level GSFF, the closed analytical forms of the real part are obtained and consistent with numerical results. The results of the imaginary part are obtained by numerical calculation. Similar analyses are extended to three-level GSFF.
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Submitted 14 January, 2024; v1 submitted 4 January, 2024;
originally announced January 2024.
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The Operator Product Expansion for Radial Lattice Quantization of 3D $φ^4$ Theory
Authors:
Venkitesh Ayyar,
Richard C. Brower,
George T. Fleming,
Anna-Maria E. Glück,
Evan K. Owen,
Timothy G. Raben,
Chung-I Tan
Abstract:
At its critical point, the three-dimensional lattice Ising model is described by a conformal field theory (CFT), the 3d Ising CFT. Instead of carrying out simulations on Euclidean lattices, we use the Quantum Finite Elements method to implement radially quantized critical $φ^4$ theory on simplicial lattices approaching $\mathbb{R} \times S^2$. Computing the four-point function of identical scalars…
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At its critical point, the three-dimensional lattice Ising model is described by a conformal field theory (CFT), the 3d Ising CFT. Instead of carrying out simulations on Euclidean lattices, we use the Quantum Finite Elements method to implement radially quantized critical $φ^4$ theory on simplicial lattices approaching $\mathbb{R} \times S^2$. Computing the four-point function of identical scalars, we demonstrate the power of radial quantization by the accurate determination of the scaling dimensions $Δ_ε$ and $Δ_{T}$ as well as ratios of the operator product expansion (OPE) coefficients $f_{σσε}$ and $f_{σσT}$ of the first spin-0 and spin-2 primary operators $ε$ and $T$ of the 3d Ising CFT.
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Submitted 2 November, 2023;
originally announced November 2023.
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Superconducting Properties of La$_2$(Cu$_{1-x}$Ni_x)$_5$As$_3$O$_2$: A $\rm μ$SR Study
Authors:
Qiong Wu,
Kaiwen Chen,
Zihao Zhu,
Cheng Tan,
Yanxing Yang,
Xin Li,
Toni Shiroka,
Xu Chen,
Jiangang Guo,
Xiaolong Chen,
Lei Shu
Abstract:
We report the results of muon spin rotation and relaxation ($\rm μ$SR) measurements on the recently discovered layered Cu-based superconducting material La$_{2}($Cu$_{1-x}$Ni$_{x}$)$_{5}$As$_{3}$O$_{2}$ ($x =$ 0.40, 0.45). Transverse-field $\rm μ$SR experiments on both samples show that the temperature dependence of superfluid density is best described by a two-band model. The absolute values of z…
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We report the results of muon spin rotation and relaxation ($\rm μ$SR) measurements on the recently discovered layered Cu-based superconducting material La$_{2}($Cu$_{1-x}$Ni$_{x}$)$_{5}$As$_{3}$O$_{2}$ ($x =$ 0.40, 0.45). Transverse-field $\rm μ$SR experiments on both samples show that the temperature dependence of superfluid density is best described by a two-band model. The absolute values of zero-temperature magnetic penetration depth $λ_{\rm ab}(0)$ were found to be 427(1.7) nm and 422(1.5) nm for $x =$ 0.40 and 0.45, respectively. Both compounds are located between the unconventional and the standard BCS superconductors in the Uemura plot. No evidence of time-reversal symmetry (TRS) breaking in the superconducting state is suggested by zero-field $\rm μ$SR measurements.
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Submitted 29 September, 2023;
originally announced September 2023.
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Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet
Authors:
Cheng Tan,
Ji-Hai Liao,
Guolin Zheng,
Meri Algarni,
Jia-Yi Lin,
Xiang Ma,
Edwin L. H. Mayes,
Matthew R. Field,
Sultan Albarakati,
Majid Panahandeh-Fard,
Saleh Alzahrani,
Guopeng Wang,
Yuanjun Yang,
Dimitrie Culcer,
James Partridge,
Mingliang Tian,
Bin Xiang,
Yu-Jun Zhao,
Lan Wang
Abstract:
Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperatur…
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Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron do** concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron do**, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a do**-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron do** in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.
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Submitted 19 March, 2024; v1 submitted 20 August, 2023;
originally announced August 2023.
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Atomic-Scale Tracking Phase Transition Dynamics of Berezinskii-Kosterlitz-Thouless Polar Vortex-Antivortex
Authors:
Ruixue Zhu,
Sizheng Zheng,
Xiaomei Li,
Tao Wang,
Congbing Tan,
Tiancheng Yu,
Zhetong Liu,
Xinqiang Wang,
Jiangyu Li,
Jie Wang,
Peng Gao
Abstract:
Particle-like topologies, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter. However, the detailed phase transition dynamics of V-AV pairs, as exemplified by self-annihilation, motion, and dissociation, have yet to be verified in real space due to the lack of suitable experimental techniques. Here, we employ polar V-AV pairs as a model sys…
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Particle-like topologies, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter. However, the detailed phase transition dynamics of V-AV pairs, as exemplified by self-annihilation, motion, and dissociation, have yet to be verified in real space due to the lack of suitable experimental techniques. Here, we employ polar V-AV pairs as a model system and track their transition pathways at atomic resolution with the aid of in situ (scanning) transmission electron microscopy and phase field simulations. We demonstrate the absence of a Berezinskii-Kosterlitz-Thouless phase transition between the room-temperature quasi-long-range ordered ground phase and the high-temperature disordered phase. Instead, we observe polarization suppression in bound V-AV pairs as the temperature increases. Furthermore, electric fields can promote the vortex and antivortex to approach each other and annihilate near the interface. The elucidated intermediate dynamic behaviors of polar V-AV pairs under thermal- and electrical-fields lay the foundation for their potential applications in electronic devices. Moreover, the dynamic behaviors revealed at atomic scale provide us new insights into understanding topological phase of matter and their topological phase transitions.
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Submitted 15 August, 2023;
originally announced August 2023.
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Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes
Authors:
Hong Kuan Ng,
Du Xiang,
Ady Suwardi,
Guangwei Hu,
Ke Yang,
Yunshan Zhao,
Tao Liu,
Zhonghan Cao,
Huajun Liu,
Shisheng Li,
**g Cao,
Qiang Zhu,
Zhaogang Dong,
Chee Kiang Ivan Tan,
Dongzhi Chi,
Cheng-Wei Qiu,
Kedar Hippalgaonkar,
Goki Eda,
Ming Yang,
**g Wu
Abstract:
In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier densit…
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In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.
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Submitted 18 July, 2023; v1 submitted 15 July, 2023;
originally announced July 2023.
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Multi-species optically addressable spin defects in a van der Waals material
Authors:
Sam C. Scholten,
Priya Singh,
Alexander J. Healey,
Islay O. Robertson,
Galya Haim,
Cheng Tan,
David A. Broadway,
Lan Wang,
Hiroshi Abe,
Takeshi Ohshima,
Mehran Kianinia,
Philipp Reineck,
Igor Aharonovich,
Jean-Philippe Tetienne
Abstract:
Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utili…
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Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utilise various spin species in a single material. Here we demonstrate an interplay between two separate spin species within a single hBN crystal, namely $S=1$ boron vacancy defects and visible emitter spins. We unambiguously prove that the visible emitters are $S=\frac{1}{2}$ spins and further demonstrate room temperature coherent control and optical readout of both spin species. Importantly, by tuning the two spin species into resonance with each other, we observe cross-relaxation indicating strong inter-species dipolar coupling. We then demonstrate magnetic imaging using the $S=\frac{1}{2}$ defects, both under ambient and cryogenic conditions, and leverage their lack of intrinsic quantization axis to determine the anisotropic magnetic susceptibility of a test sample. Our results establish hBN as a versatile platform for quantum technologies in a van der Waals host at room temperature.
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Submitted 25 June, 2024; v1 submitted 28 June, 2023;
originally announced June 2023.
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Towards Sustainable Ultrawide Bandgap Van der Waals Materials: An ab initio Screening Effort
Authors:
Chuin Wei Tan,
Linqiang Xu,
Chen Chen Er,
Siang-Piao Chai,
Boris Kozinsky,
Hui Ying Yang,
Shengyuan A. Yang,
**g Lu,
Yee Sin Ang
Abstract:
The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the discovery and design of nanomaterials that achieve device-level sustainability, where high performance and low operational energy cost are prioritized. However, many of such materials are composed of elements that are un…
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The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the discovery and design of nanomaterials that achieve device-level sustainability, where high performance and low operational energy cost are prioritized. However, many of such materials are composed of elements that are under threat of depletion and pose elevated risks to the environment. The role of material-level sustainability in computational screening efforts remains an open question thus far. Here we develop a general van der Waals materials screening framework imbued with sustainability-motivated search criteria. Using ultrawide bandgap (UWBG) materials as a backdrop -- an emerging materials class with great prospects in dielectric, power electronics, and ultraviolet device applications, we demonstrate how this screening framework results in 25 sustainable UWBG layered materials comprising only of low-risks elements. Our findings constitute a critical first-step towards reinventing a more sustainable electronics landscape beyond silicon, with the framework established in this work serving as a harbinger of sustainable 2D materials discovery.
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Submitted 25 October, 2023; v1 submitted 26 June, 2023;
originally announced June 2023.
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Highly anisotropic optical conductivities in two-dimensional tilted semi-Dirac bands
Authors:
Chang-Xu Yan,
Chao-Yang Tan,
Hong Guo,
Hao-Ran Chang
Abstract:
Within linear response theory, the absorptive part of highly anisotropic optical conductivities are analytically calculated for distinct tilts in two-dimensional (2D) tilted semi-Dirac bands (SDBs). The transverse optical conductivities always vanish. The interband longitudinal optical conductivities (LOCs) in 2D tilted SDBs differ qualitatively in the power-law scaling of $ω$ as…
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Within linear response theory, the absorptive part of highly anisotropic optical conductivities are analytically calculated for distinct tilts in two-dimensional (2D) tilted semi-Dirac bands (SDBs). The transverse optical conductivities always vanish. The interband longitudinal optical conductivities (LOCs) in 2D tilted SDBs differ qualitatively in the power-law scaling of $ω$ as $\mathrm{Re}σ_{\perp}^{\mathrm{IB}}(ω)\proptoσ_0\sqrtω$ and $\mathrm{Re}σ_{\parallel}^{\mathrm{IB}}(ω)\proptoσ_0/\sqrtω$. By contrast, the intraband LOCs in 2D tilted SDBs depend on $μ$ in the power-law scaling as $\mathrm{Re}σ_{\perp}^{\mathrm{D}}(ω)\proptoσ_0μ\sqrtμ$ and $\mathrm{Re}σ_{\parallel}^{\mathrm{D}}(ω)\proptoσ_0μ/\sqrtμ$. The tilt-dependent behaviors of LOCs could qualitatively characterize distinct impact of band tilting in 2D tilted SDBs. In particular, for arbitrary tilt $t$ satisfying $0<t\le 2$, the interband LOCs always possess a robust fixed point at $ω=2μ$. The power-law scalings and tilt-dependent behaviors further dictate significant differences in the asymptotic background values and angular dependence of LOCs. Our theoretical predictions should be valid for a broad class of 2D tilted SDB materials, and can also be used to fingerprint 2D tilted SDB from 2D untilted SDB as well as tilted Dirac bands.
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Submitted 23 November, 2023; v1 submitted 31 March, 2023;
originally announced March 2023.
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Revealing Emergent Magnetic Charge in an Antiferromagnet with Diamond Quantum Magnetometry
Authors:
Anthony K. C. Tan,
Hariom Jani,
Michael Högen,
Lucio Stefan,
Claudio Castelnovo,
Daniel Braund,
Alexandra Geim,
Matthew S. G. Feuer,
Helena S. Knowles,
Ariando Ariando,
Paolo G. Radaelli,
Mete Atatüre
Abstract:
Whirling topological textures play a key role in exotic phases of magnetic materials and offer promise for logic and memory applications. In antiferromagnets, these textures exhibit enhanced stability and faster dynamics with respect to ferromagnetic counterparts, but they are also difficult to study due to their vanishing net magnetic moment. One technique that meets the demand of highly sensitiv…
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Whirling topological textures play a key role in exotic phases of magnetic materials and offer promise for logic and memory applications. In antiferromagnets, these textures exhibit enhanced stability and faster dynamics with respect to ferromagnetic counterparts, but they are also difficult to study due to their vanishing net magnetic moment. One technique that meets the demand of highly sensitive vectorial magnetic field sensing with negligible backaction is diamond quantum magnetometry. Here, we show that the archetypal antiferromagnet, hematite, hosts a rich tapestry of monopolar, dipolar and quadrupolar emergent magnetic charge distributions. The direct readout of the previously inaccessible vorticity of an antiferromagnetic spin texture provides the crucial connection to its magnetic charge through a duality relation. Our work defines a novel paradigmatic class of magnetic systems to explore two-dimensional monopolar physics, and highlights the transformative role that diamond quantum magnetometry could play in exploring emergent phenomena in quantum materials.
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Submitted 21 March, 2023;
originally announced March 2023.
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Automatic Differentiation for Orbital-Free Density Functional Theory
Authors:
Chuin Wei Tan,
Chris J. Pickard,
William C. Witt
Abstract:
Differentiable programming has facilitated numerous methodological advances in scientific computing. Physics engines supporting automatic differentiation have simpler code, accelerating the development process and reducing the maintenance burden. Furthermore, fully-differentiable simulation tools enable direct evaluation of challenging derivatives - including those directly related to properties m…
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Differentiable programming has facilitated numerous methodological advances in scientific computing. Physics engines supporting automatic differentiation have simpler code, accelerating the development process and reducing the maintenance burden. Furthermore, fully-differentiable simulation tools enable direct evaluation of challenging derivatives - including those directly related to properties measurable by experiment - that are conventionally computed with finite difference methods. Here, we investigate automatic differentiation in the context of orbital-free density functional theory (OFDFT) simulations of materials, introducing PROFESS-AD. Its automatic evaluation of properties derived from first derivatives, including functional potentials, forces, and stresses, facilitates the development and testing of new density functionals, while its direct evaluation of properties requiring higher-order derivatives, such as bulk moduli, elastic constants, and force constants, offers more concise implementations compared to conventional finite difference methods. For these reasons, PROFESS-AD serves as an excellent prototy** tool and provides new opportunities for OFDFT.
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Submitted 2 April, 2023; v1 submitted 6 December, 2022;
originally announced December 2022.
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Anomalous acoustic plasmons in two-dimensional over-tilted Dirac bands
Authors:
Chang-Xu Yan,
Furu Zhang,
Chao-Yang Tan,
Hao-Ran Chang,
Jianhui Zhou,
Yugui Yao,
Hong Guo
Abstract:
The over-tilting of type-II Dirac cones has led to various fascinating quantum phenomena. Here we find two anomalous acoustic plasmons (AAPs) are dictated by the distinct geometry of two-dimensional (2D) type-II Dirac cones, far beyond the conventional $\text{\ensuremath{\sqrt{q}}}$ plasmon. One AAP originates from the strong hybridization of two pockets at one Dirac point, whereas the other is at…
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The over-tilting of type-II Dirac cones has led to various fascinating quantum phenomena. Here we find two anomalous acoustic plasmons (AAPs) are dictated by the distinct geometry of two-dimensional (2D) type-II Dirac cones, far beyond the conventional $\text{\ensuremath{\sqrt{q}}}$ plasmon. One AAP originates from the strong hybridization of two pockets at one Dirac point, whereas the other is attributed to the significant enhancement of the band correlation around the open Fermi surface. Remarkably, the plasmons exhibit valley-dependent chirality along the tilting direction due to the chiral electron dispersion. Meanwhile, we discuss the tunability of plasmon dispersion and lifetime by tuning the gap and dielectric substrate. Our work provides a promising way to generate the novel plasmons in Dirac materials.
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Submitted 21 November, 2022;
originally announced November 2022.
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Effects of spatial dimensionality and band tilting on the longitudinal optical conductivities in Dirac bands
Authors:
Jian-Tong Hou,
Chang-Xu Yan,
Chao-Yang Tan,
Zhi-Qiang Li,
Peng Wang,
Hong Guo,
Hao-Ran Chang
Abstract:
We report a unified theory based on linear response, for analyzing the longitudinal optical conductivity (LOC) of materials with tilted Dirac cones. Depending on the tilt parameter $t$, the Dirac electrons have four phases: untilted, type-I, type-II, and type-III; the Dirac dispersion can be isotropic or anisotropic; the spatial dimension of the material can be one-, two-, or three-dimensions (1D,…
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We report a unified theory based on linear response, for analyzing the longitudinal optical conductivity (LOC) of materials with tilted Dirac cones. Depending on the tilt parameter $t$, the Dirac electrons have four phases: untilted, type-I, type-II, and type-III; the Dirac dispersion can be isotropic or anisotropic; the spatial dimension of the material can be one-, two-, or three-dimensions (1D, 2D and 3D). The interband LOCs and intraband LOCs in $d$ dimension (with $d\ge2$) are found to scale as $σ_{0}ω^{d-2}$ and $σ_{0}μ^{d-1}δ(ω)$, respectively, where $ω$ is the frequency and $μ$ the chemical potential. The interband LOC vanishes in 1D due to lack of extra spatial dimension. In contrast, the interband LOCs in 2D and 3D are nonvanishing and share many similar properties. A universal and robust fixed point of interband LOCs appears at $ω=2μ$ no matter $d=2$ or $d=3$, which can be intuitively understood by the geometric structures of Fermi surface and energy resonance contour. The intraband LOCs and the carrier density for 2D and 3D tilted Dirac bands are both closely related to the geometric structure of Fermi surface and the cutoff of integration. The angular dependence of LOCs is found to characterize both spatial dimensionality and band tilting and the constant asymptotic background values of LOC reflect features of Dirac bands. The LOCs in the anisotropic tilted Dirac cone can be connected to its isotropic counterpart by a ratio that consists of Fermi velocities for both 2D and 3D. Most of the findings are universal for tilted Dirac materials and hence valid for a great many Dirac materials in the spatial dimensions of physical interest.
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Submitted 24 November, 2023; v1 submitted 19 October, 2022;
originally announced October 2022.
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Glassy crystals with colossal multi-baroresponsivities
Authors:
Kun Zhang,
Zhe Zhang,
Hailong Pan,
Xueting Zhao,
Ji Qi,
Zhao Zhang,
Ruiqi Song,
Chenyang Yu,
Biaohong Huang,
Xu**g Li,
Huaican Chen,
Changlong Tan,
Wen Yin,
Wei** Hu,
Michael Wübbenhorst,
Jiangshui Luo,
Dehong Yu,
Zhidong Zhang,
Bing Li
Abstract:
As a nontrivial solid state of matter, the glassy-crystal state embraces physical features of both crystalline and amorphous solids, where a long-range ordered periodic structure formed by the mass centers of constituent molecules accommodates orientational glasses. Here, we discover and validate a glassy-crystal state in 2-amino-2-methyl-1,3-propanediol (AMP, C4H11NO2) by neutron scattering and c…
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As a nontrivial solid state of matter, the glassy-crystal state embraces physical features of both crystalline and amorphous solids, where a long-range ordered periodic structure formed by the mass centers of constituent molecules accommodates orientational glasses. Here, we discover and validate a glassy-crystal state in 2-amino-2-methyl-1,3-propanediol (AMP, C4H11NO2) by neutron scattering and complementary broadband dielectric spectroscopy (BDS) measurements. The freezing process of the dynamic orientational disorder is manifested at relaxation times well described by the Vogel-Fulcher-Tammann (VFT) law and the strongly frequency-dependent freezing temperature ranging from around 225 K at 0.1 Hz to above room temperature in the GHz region. At room temperature, the supercooled state is extremely sensitive to pressure such that a few MPa pressure can induce crystallization to the ordered crystal state, eventually leading to a temperature increase by 48 K within 20 s, a significant reduction of visible light transmittance from about 95% to a few percentages, and a remarkable decrease of electrical conductivity by three orders of magnitude. These ultrasensitive baroresponsivities might find their applications in low-grade waste heat recycling, pressure sensors and non-volatile memory devices. It is expected that glassy crystals serve as an emerging platform for exploiting exotic states of matter and the associated fantastic applications.
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Submitted 10 September, 2022;
originally announced September 2022.
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Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling
Authors:
Kui Zhao,
Huaiyuan Liu,
Congwei Tan,
Jianfei Xiao,
Jie Shen,
Guangtong Liu,
Hailin Peng,
Li Lu,
Fanming Qu
Abstract:
Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime…
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Systematic electrical transport characterizations were performed on high-quality Bi2O2Se nanowires to illustrate its great transport properties and further application potentials in spintronics. Bi2O2Se nanowires synthesized by chemical vapor deposition method presented a high field-effect mobility up to 1.34*104 cm2V-1s-1, and exhibited ballistic transport in the low back-gate voltage (Vg) regime where conductance plateaus were observed. When further increasing the electron density by increasing Vg, we entered the phase coherent regime and weak antilocalization (WAL) was observed. The spin relaxation length extracted from the WAL was found to be gate tunable, ranging from ~100 nm to ~250 nm and reaching a stronger spin-obit coupling (SOC) than the two-dimensional counterpart (flakes). We attribute the strong SOC and the gate tunability to the presence of a surface accumulation layer which induces a strong inversion asymmetry on the surface. Such scenario was supported by the observation of two Shubnikov-de Haas oscillation frequencies that correspond to two types of carriers, one on the surface, and the other in the bulk. The high-quality Bi2O2Se nanowires with a high mobility and a strong SOC can act as a very prospective material in future spintronics.
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Submitted 21 December, 2022; v1 submitted 7 September, 2022;
originally announced September 2022.
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Imaging current control of magnetization in Fe$_3$GeTe$_2$ with a widefield nitrogen-vacancy microscope
Authors:
Islay O. Robertson,
Cheng Tan,
Sam C. Scholten,
Alexander J. Healey,
Gabriel J. Abrahams,
Guolin Zheng,
Aurélien Manchon,
Lan Wang,
Jean-Philippe Tetienne
Abstract:
Van der Waals (vdW) magnets are appealing candidates for realising spintronic devices that exploit current control of magnetization (e.g. switching or domain wall motion), but so far experimental demonstrations have been sparse, in part because of challenges associated with imaging the magnetization in these systems. Widefield nitrogen-vacancy (NV) microscopy allows rapid, quantitative magnetic im…
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Van der Waals (vdW) magnets are appealing candidates for realising spintronic devices that exploit current control of magnetization (e.g. switching or domain wall motion), but so far experimental demonstrations have been sparse, in part because of challenges associated with imaging the magnetization in these systems. Widefield nitrogen-vacancy (NV) microscopy allows rapid, quantitative magnetic imaging across entire vdW flakes, ideal for capturing changes in the micromagnetic structure due to an electric current. Here we use a widefield NV microscope to study the effect of current injection in thin flakes ($\sim10$nm) of the vdW ferromagnet Fe$_3$GeTe$_2$ (FGT). We first observe current-reduced coercivity on an individual domain level, where current injection in FGT causes substantial reduction in the magnetic field required to locally reverse the magnetisation. We then explore the possibility of current-induced domain-wall motion, and provide preliminary evidence for such a motion under relatively low current densities, suggesting the existence of strong current-induced torques in our devices. Our results illustrate the applicability of widefield NV microscopy to imaging spintronic phenomena in vdW magnets, highlight the possibility of efficient magnetization control by direct current injection without assistance from an adjacent conductor, and motivate further investigations of the effect of currents in FGT and other vdW magnets.
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Submitted 21 February, 2023; v1 submitted 21 July, 2022;
originally announced July 2022.
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Tunable and giant valley-selective Hall effect in gapped bilayer graphene
Authors:
Jianbo Yin,
Cheng Tan,
David Barcons-Ruiz,
Iacopo Torre,
Kenji Watanabe,
Takashi Taniguchi,
Justin C. W. Song,
James Hone,
Frank H. L. Koppens
Abstract:
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus t…
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Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.
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Submitted 20 April, 2022;
originally announced April 2022.
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Unveiling the emergent traits of chiral spin textures in magnetic multilayers
Authors:
Xiaoye Chen,
Ming Lin,
Jian Feng Kong,
Hui Ru Tan,
Anthony K. C. Tan,
Soong-Geun Je,
Hang Khume Tan,
Khoong Hong Khoo,
Mi-Young Im,
Anjan Soumyanarayanan
Abstract:
Magnetic skyrmions are topologically wound nanoscale textures of spins whose ambient stability and electrical manipulation in multilayer films have led to an explosion of research activities. While past efforts focused predominantly on isolated skyrmions, recently ensembles of chiral spin textures, consisting of skyrmions and magnetic stripes, were shown to possess rich interactions with potential…
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Magnetic skyrmions are topologically wound nanoscale textures of spins whose ambient stability and electrical manipulation in multilayer films have led to an explosion of research activities. While past efforts focused predominantly on isolated skyrmions, recently ensembles of chiral spin textures, consisting of skyrmions and magnetic stripes, were shown to possess rich interactions with potential for device applications. However, several fundamental aspects of chiral spin texture phenomenology remain to be elucidated, including their domain wall structure, thermodynamic stability, and morphological transitions. Here we unveil the evolution of these textural characteristics on a tunable multilayer platform - wherein chiral interactions governing spin texture energetics can be widely varied - using a combination of full-field electron and soft X-ray microscopies with numerical simulations. With increasing chiral interactions, we demonstrate the emergence of Néel helicity, followed by a marked reduction in domain compressibility, and finally a transformation in the skyrmion formation mechanism. Together with an analytical model, these experiments establish a comprehensive microscopic framework for investigating and tailoring chiral spin texture character in multilayer films.
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Submitted 23 March, 2022;
originally announced March 2022.
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Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures
Authors:
Sultan Albarakati,
Wen-Qiang Xie,
Cheng Tan,
Guolin Zheng,
Meri Algarni,
Junbo Li,
James Partridge,
Michelle J. S. Spencer,
Lawrence Farrar,
Yimin Xiong,
Mingliang Tian,
Xiaolin Wang,
Yu-Jun Zhao,
Lan Wang
Abstract:
Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized elect…
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Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.
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Submitted 20 March, 2022;
originally announced March 2022.
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Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy
Authors:
Xiaobo Li,
Mengmeng Meng,
Shaoyun Huang,
Congwei Tan,
Congcong Zhang,
Hailin Peng,
H. Q. Xu
Abstract:
We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the s…
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We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the sheet resistance of the device reveal that the transport carriers in the nanoplate are of n-type and that, with decreasing top gate voltage, the carrier density in the nanoplate is decreased. However, the mobility is increased with decreasing top-gate voltage. This mobility increase with decreasing carrier density in the nanoplate is demonstrated to arise from a decrease in bulk-to-surface electron scattering rate. Low-field magnetotransport measurements are performed at low temperatures. The measured magnetoconductivity of the nanoplate shows typical weak anti-localization (WAL) characteristics. We analyze the measurements by taking surface-bulk inter-channel electron scattering into account and extract dephasing times $τ_φ$, diffusion coefficients $D$ of electrons at the top surface and in the bulk, and the surface-bulk scattering times $τ_{SB}$ as a function of top-gate voltage and temperature. It is found that the dephasing in the nanoplate arises dominantly from electron-electron scattering with small energy transfers. It is also found that the ratio of $τ_φ$/$τ_{SB}$ (a measure of the surface-bulk electron coherent coupling) is decreased with decreasing gate voltage or increasing temperature. We demonstrate that taking the surface-bulk coherent electron scattering in our Bi$_2$Te$_3$ nanoplate into account is essential to understand quantum transport measurements at low temperatures.
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Submitted 10 February, 2022;
originally announced February 2022.
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Muon Spin Relaxation Study of Spin Dynamics in Quantum Spin Liquid Candidate H$_3$LiIr$_2$O$_6$
Authors:
Yan-Xing Yang,
Liang-Long Huang,
Zi-Hao Zhu,
Chang-Sheng Chen,
Qiong Wu,
Zhao-Feng Ding,
Cheng Tan,
Pabi K. Biswas,
Adrian D. Hillier,
You-Guo Shi,
Da-Peng Yu,
Cai Liu,
Le Wang,
Fei Ye,
Jia-Wei Mei,
Lei Shu
Abstract:
We present detail thermodynamic and muon spin relaxation ($μ$SR) studies of quantum spin liquid (QSL) candidate H$_3$LiIr$_2$O$_6$. In agreement with the low temperature thermodynamic evidence (\textit{e.g.} bulk magnetization and heat capacity) for the absence of magnetic transition, zero-field (ZF)-$μ$SR measurements indicate the absence of static magnetic ordering or spin freezing down to our l…
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We present detail thermodynamic and muon spin relaxation ($μ$SR) studies of quantum spin liquid (QSL) candidate H$_3$LiIr$_2$O$_6$. In agreement with the low temperature thermodynamic evidence (\textit{e.g.} bulk magnetization and heat capacity) for the absence of magnetic transition, zero-field (ZF)-$μ$SR measurements indicate the absence of static magnetic ordering or spin freezing down to our lowest temperature of 80~mK. Both ZF- and longitudinal-field (LF)-$μ$SR measurements reveal persistent spin fluctuations at low temperatures. These results provide well-established evidence of a QSL state in H$_3$LiIr$_2$O$_6$. Furthermore, the observation of the time-field scaling behavior of $μ$SR spectra $A(t)\sim A(t/H^{0.46})$, and the low temperature power-law specific heat coefficient $C/T \sim T^{-0.57}$, indicate the finite density of state in the form of $N(E) \sim E^{-0.5}$, in a good agreement with the disorder-induced states in the Kitaev spin liquid.
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Submitted 30 January, 2022;
originally announced January 2022.
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Recent advance in phase transition of vanadium oxide based solar reflectors and the fabrication progress
Authors:
Golsa Mirbagheri,
David T. Crouse,
Chee-Keong Tan
Abstract:
Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR radiation reflectivity, while at the lower temperature the monoclinic structure VO2 acts as the transparent material and increase the transmission radiation. In…
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Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR radiation reflectivity, while at the lower temperature the monoclinic structure VO2 acts as the transparent material and increase the transmission radiation. In this paper, we first present the metal-insulator phase transition (MIT) of the VO2 in high and low temperatures. Then we simulate the meta-surface VO2 of metamaterial reflector by Ansys HFSS to show the emittance tunability of the rutile and monoclinic phase of the VO2. In next section, we will review the recent progress in the deposition of thermochromic VO2 on glass and silicon substrate with modifying the pressure of sputtering gases and temperature of the substrate. Finally, we present the results of the in-situ sputtered VOx thin film on thick SiO2 substrate in different combination of oxygen and argon environment by V2O5 target at temperature higher than 300C and then, analyze it with x-ray diffraction (XRD) method. The thermochromic VO2 based metamaterial structures open a new route to the passive energy-efficient optical solar reflector in the past few years.
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Submitted 17 January, 2022; v1 submitted 10 January, 2022;
originally announced January 2022.
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Signatures of Lifshitz transition in the optical conductivity of two-dimensional tilted Dirac materials
Authors:
Chao-Yang Tan,
Jian-Tong Hou,
Chang-Xu Yan,
Hong Guo,
Hao-Ran Chang
Abstract:
Lifshitz transition is a kind of topological phase transition in which the Fermi surface is reconstructed. It can occur in the two-dimensional (2D) tilted Dirac materials when the energy bands change between the type-I phase ($0<t<1$) and the type-II phase ($t>1$) through the type-III phase ($t=1$), where different tilts are parametrized by the values of $t$. In order to characterize the Lifshitz…
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Lifshitz transition is a kind of topological phase transition in which the Fermi surface is reconstructed. It can occur in the two-dimensional (2D) tilted Dirac materials when the energy bands change between the type-I phase ($0<t<1$) and the type-II phase ($t>1$) through the type-III phase ($t=1$), where different tilts are parametrized by the values of $t$. In order to characterize the Lifshitz transition therein, we theoretically investigate the longitudinal optical conductivities (LOCs) in type-I, type-II, and type-III Dirac materials within linear response theory. In the undoped case, the LOCs are constants either independent of the tilt parameter in both type-I and type-III phases or determined by the tilt parameter in the type-II phase. In the doped case, the LOCs are anisotropic and possess two critical frequencies determined by $ω=ω_1(t)$ and $ω=ω_2(t)$, which are also confirmed by the joint density of state. The tilt parameter and chemical potential can be extracted from optical experiments by measuring the positions of these two critical boundaries and their separation $Δω(t)=ω_2(t)-ω_1(t)$. With increasing the tilting, the separation becomes larger in the type-I phase whereas smaller in the type-II phase. The LOCs in the regime of large photon energy are exactly the same as that in the undoped case. The type of 2D tilted Dirac bands can be determined by the asymptotic background values, critical boundaries and their separation in the LOCs. These can therefore be taken as signatures of Lifshitz transition therein. The results of this work are expected to be qualitatively valid for a large number of 2D tilted Dirac materials, such as 8-\emph{Pmmn} borophene monolayer, $α$-SnS$_2$, TaCoTe$_2$, TaIrTe$_4$, and $1T^\prime$ transition metal dichalcogenides, due to the underlying intrinsic similarities of 2D tilted Dirac bands.
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Submitted 7 October, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Muon spin rotation and relaxation study on topological noncentrosymmetric superconductor PbTaSe$_2$
Authors:
Z. H. Zhu,
C. Tan,
J. Zhang,
P. K. Biswas,
A. D. Hillier,
M. X. Wang,
Y. X. Yang,
C. S. Chen,
Z. F. Ding,
S. Y. Li,
L. Shu
Abstract:
Topological superconductivity is an exotic phenomenon due to the symmetry-protected topological surface state, in which a quantum system has an energy gap in the bulk but supports gapless excitations confined to its boundary. Symmetries including central and time-reversal (TRS), along with their relations with topology, are crucial for topological superconductivity. We report muon spin relaxation/…
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Topological superconductivity is an exotic phenomenon due to the symmetry-protected topological surface state, in which a quantum system has an energy gap in the bulk but supports gapless excitations confined to its boundary. Symmetries including central and time-reversal (TRS), along with their relations with topology, are crucial for topological superconductivity. We report muon spin relaxation/rotation ($μ$SR) experiments on a topological noncentrosymmetric superconductor PbTaSe$_2$ to study its TRS and gap symmetry. Zero-field $μ$SR experiments indicate the absence of internal magnetic field in the superconducting state, consistent with previous $μ$SR results. Furthermore, transverse-field $μ$SR measurements reveals that the superconducting gap of PbTaSe$_2$ is an isotropic three-dimensional fully-gapped single-band. The fully-gapped results can help understand the pairing mechanism and further classify the topological superconductivity in this system.
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Submitted 11 December, 2021;
originally announced December 2021.
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Dynamics of position disordered Ising spins with a soft-core potential
Authors:
Canzhu Tan,
Xiaodong Lin,
Yabing Zhou,
Y. H. Jiang,
Matthias Weidemüller,
Bing Zhu
Abstract:
We theoretically study magnetization relaxation of Ising spins distributed randomly in a $d$-dimension homogeneous and Gaussian profile under a soft-core two-body interaction potential $\propto1/[1+(r/R_c)^α]$ ($α\ge d$), where $r$ is the inter-spin distance and $R_c$ is the soft-core radius. The dynamics starts with all spins polarized in the transverse direction. In the homogeneous case, an anal…
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We theoretically study magnetization relaxation of Ising spins distributed randomly in a $d$-dimension homogeneous and Gaussian profile under a soft-core two-body interaction potential $\propto1/[1+(r/R_c)^α]$ ($α\ge d$), where $r$ is the inter-spin distance and $R_c$ is the soft-core radius. The dynamics starts with all spins polarized in the transverse direction. In the homogeneous case, an analytic expression is derived at the thermodynamic limit, which starts as $\propto\exp(-t^2)$ and follows a stretched-exponential law asymptotically at long time with an exponent $β=d/α$. In between an oscillating behaviour is observed with a dam** amplitude. For Gaussian samples, the degree of disorder in the system can be controlled by the ratio $l_ρ/R_c$ with $l_ρ$ the mean inter-spin distance and the magnetization dynamics is investigated numerically. In the limit of $l_ρ/R_c\ll1$, a coherent many-body dynamics is recovered for the total magnetization despite of the position disorder of spins. In the opposite limit of $l_ρ/R_c\gg1$, a similar dynamics as that in the homogeneous case emerges at later time after a initial fast decay of the magnetization. We obtain a stretched exponent of $β\approx0.18$ for the asymptotic evolution with $d=3, α=6$, which is different from that in the homogeneous case ($β=0.5$).
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Submitted 1 November, 2021;
originally announced November 2021.
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Electrically controlled superconductor-insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes
Authors:
Guolin Zheng,
Cheng Tan,
Zheng Chen,
Maoyuan Wang,
Xiangde Zhu,
Sultan Albarakati,
Meri Algarni,
James Partridge,
Lawrence Farrar,
Jianhui Zhou,
Wei Ning,
Mingliang Tian,
Michael S. Fuhrer,
Lan Wang
Abstract:
The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we sh…
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The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the do**-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.
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Submitted 8 March, 2022; v1 submitted 26 September, 2021;
originally announced September 2021.
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Initial energy deposition and initiation mechanism of nanosecond laser damage caused by KDP surface micro-defects
Authors:
Hao Yang,
Mingjun Chen,
Jian Cheng,
Zhichao Liu,
Linjie Zhao,
Qi Liu,
Chao Tan,
Jian Wang
Abstract:
To enable an exploration of the initiation mechanism of nanosecond laser damage on a potassium dihydrogen phosphate (KDP) surface, a defect-assisted energy deposition model is developed that involves light intensity enhancement and a sub-band gap energy level structure. The simulations provide an explanation on why the laser-induced damage threshold (LIDT) of the KDP crystal is two orders of magni…
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To enable an exploration of the initiation mechanism of nanosecond laser damage on a potassium dihydrogen phosphate (KDP) surface, a defect-assisted energy deposition model is developed that involves light intensity enhancement and a sub-band gap energy level structure. The simulations provide an explanation on why the laser-induced damage threshold (LIDT) of the KDP crystal is two orders of magnitude lower than the theoretical value. The model is verified by use of the transient images that appear during the laser damage. In addition, the dimensions of the "dangerous" surface defects that are the most sensitive to the laser damage are proposed. This work enables clarification on the initial energy deposition (IED) and initiation mechanism of the nanosecond laser damage caused by the KDP surface defects on micro-nano scale. It is helpful in understanding the laser-matter interactions and to improve the processing technique for high quality optical components.
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Submitted 3 September, 2021;
originally announced September 2021.
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Dynamics of Polar Skyrmion Bubbles under Electric Fields
Authors:
Ruixue Zhu,
Zhexin Jiang,
Xinxin Zhang,
Xiangli Zhong,
Congbing Tan,
Mingwei Liu,
Yuanwei Sun,
Xiaomei Li,
Ruishi Qi,
Ke Qu,
Zhetong Liu,
Mei Wu,
Mingqiang Li,
Boyuan Huang,
Zhi Xu,
**bin Wang,
Kaihui Liu,
Peng Gao,
Jie Wang,
Jiangyu Li,
Xuedong Bai
Abstract:
Room-temperature polar skyrmion bubbles that are recently found in oxide superlattice, have received enormous interests for their potential applications in nanoelectronics due to the nanometer size, emergent chirality, and negative capacitance. For practical applications, the ability to controllably manipulate them by using external stimuli is prerequisite. Here, we study the dynamics of individua…
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Room-temperature polar skyrmion bubbles that are recently found in oxide superlattice, have received enormous interests for their potential applications in nanoelectronics due to the nanometer size, emergent chirality, and negative capacitance. For practical applications, the ability to controllably manipulate them by using external stimuli is prerequisite. Here, we study the dynamics of individual polar skyrmion bubbles at the nanoscale by using in situ biasing in a scanning transmission electron microscope. The reversible electric field-driven phase transition between topological and trivial polar states are demonstrated. We create, erase and monitor the shrinkage and expansion of individual polar skyrmions. We find that their transition behaviors are substantially different from that of magnetic analogue. The underlying mechanism is discussed by combing with the phase-field simulations. The controllable manipulation of nanoscale polar skyrmions allows us to tune the dielectric permittivity at atomic scale and detailed knowledge of their phase transition behaviors provides fundamentals for their applications in nanoelectronics.
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Submitted 28 July, 2021;
originally announced July 2021.
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Visualizing the strongly reshaped skyrmion Hall effect in multilayer wire devices
Authors:
Anthony K. C. Tan,
Pin Ho,
James Lourembam,
Lisen Huang,
Hang Khume Tan,
Cynthia J. O. Reichhardt,
Charles Reichhardt,
Anjan Soumyanarayanan
Abstract:
Magnetic skyrmions are nanoscale spin textures touted as next-generation computing elements. When subjected to lateral currents, skyrmions move at considerable speeds. Their topological charge results in an additional transverse deflection known as the skyrmion Hall effect (SkHE). While promising, their dynamic phenomenology with current, skyrmion size, geometric effects and disorder remain to be…
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Magnetic skyrmions are nanoscale spin textures touted as next-generation computing elements. When subjected to lateral currents, skyrmions move at considerable speeds. Their topological charge results in an additional transverse deflection known as the skyrmion Hall effect (SkHE). While promising, their dynamic phenomenology with current, skyrmion size, geometric effects and disorder remain to be established. Here we report on the ensemble dynamics of individual skyrmions forming dense arrays in Pt/Co/MgO wires by examining over 20,000 instances of motion across currents and fields. The skyrmion speed reaches 24 m/s in the plastic flow regime and is surprisingly robust to positional and size variations. Meanwhile, the SkHE saturates at $\sim 22^\circ$, is substantially reshaped by the wire edge, and crucially increases weakly with skyrmion size. Particle model simulations suggest that the SkHE size dependence - contrary to analytical predictions - arises from the interplay of intrinsic and pinning-driven effects. These results establish a robust framework to harness SkHE and achieve high-throughput skyrmion motion in wire devices.
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Submitted 14 July, 2021;
originally announced July 2021.
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Manipulation of polar vortex chirality in oxide superlattices
Authors:
Pan Chen,
Congbing Tan,
Zhexin Jiang,
Peng Gao,
Yuanwei Sun,
Xiaomei Li,
Ruixue Zhu,
Lei Liao,
Xu Hou,
Lifen Wang,
Ke Qu,
Ning Li,
Xiaomin Li,
Zhi Xu,
Kaihui Liu,
Wenlong Wang,
**bin Wang,
** Ouyang,
Xiangli Zhong,
Jie Wang,
Xuedong Bai
Abstract:
Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chiralit…
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Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chirality of polar vortices in PbTiO3/SrTiO3 superlattices under electric field by using atomically resolved in situ scanning transmission electron microscopy and phase-field simulations. We find that the adjacent clockwise and counterclockwise vortex usually have opposite chirality. The phase-field simulations suggest that the rotation reversal or axial polarization switching can lead to the chirality change. Guided by which, we experimentally validate that the vortex rotation direction can be changed by applying and subsequently removing of electric fields, offering a potential strategy to manipulate the vortex chirality. The revealed details of dynamic behavior for individual polar vortices at atomic scale and the proposed strategy for chirality manipulation provide fundamentals for future device applications.
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Submitted 25 April, 2021;
originally announced April 2021.
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Intrinsic new properties of a quantum spin liquid
Authors:
Yanxing Yang,
Xin Li,
Cheng Tan,
Zihao Zhu,
Jian Zhang,
Zhaofeng Ding,
Qiong Wu,
Changshen Chen,
Toni Shiroka,
Yuanhua Xia,
Douglas E. MacLaughlin,
Chandra M. Varma,
Lei Shu
Abstract:
Quantum fluctuations are expected to lead to highly entangled spin-liquid states in certain two-dimensional spin-1/2 compounds. We have synthesized and measured thermodynamic properties and muon spin relaxation rates in the copper-based two-dimensional triangular-lattice spin liquids Lu$_3$Cu$_2$Sb$_3$O$_{14}$ and Lu$_3$CuZnSb$_3$O$_{14}$. The former is the least disordered of this kind discovered…
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Quantum fluctuations are expected to lead to highly entangled spin-liquid states in certain two-dimensional spin-1/2 compounds. We have synthesized and measured thermodynamic properties and muon spin relaxation rates in the copper-based two-dimensional triangular-lattice spin liquids Lu$_3$Cu$_2$Sb$_3$O$_{14}$ and Lu$_3$CuZnSb$_3$O$_{14}$. The former is the least disordered of this kind discovered to date. Magnetic entropy generation at high temperatures has been ruled out after carefully correcting for the lattice specific heat. Surprisingly, roughly half of the magnetic entropy is missing down to temperatures of O(10$^{-3}$) the exchange energy, independent of magnetic field up to $gμ_B H \gtrsim k_BΘ_W$, where $Θ_W$ is the Weiss temperature. The magnetic specific heat divided by temperature $C_M(T)/T$ and muon spin relaxation rate $λ(T)$ are both temperature-independent at low temperatures, followed by logarithmic decreases with increasing temperature. This behavior can be simply characterized by scale-invariant time-dependent fluctuations with a single parameter. Since no cooperative effects due to impurities are observed, the measured properties are intrinsic. They are evidence that in Lu$_3$Cu$_2$Sb$_3$O$_{14}$ massive quantum fluctuations lead to either a gigantic specific heat peak from singlet excitations at very low temperatures or, perhaps less likely, an extensively degenerate possibly topological singlet ground state.
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Submitted 21 July, 2022; v1 submitted 18 February, 2021;
originally announced February 2021.
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Skyrmion generation from irreversible fission of stripes in chiral multilayer films
Authors:
Anthony K. C. Tan,
James Lourembam,
Xiaoye Chen,
Pin Ho,
Hang Khume Tan,
Anjan Soumyanarayanan
Abstract:
Competing interactions produce finite-size textures in myriad condensed matter systems, typically forming elongated stripe or round bubble domains. Transitions between stripe and bubble phases, driven by field or temperature, are expected to be reversible in nature. Here we report on the distinct character of the analogous transition for nanoscale spin textures in chiral Co/Pt-based multilayer fil…
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Competing interactions produce finite-size textures in myriad condensed matter systems, typically forming elongated stripe or round bubble domains. Transitions between stripe and bubble phases, driven by field or temperature, are expected to be reversible in nature. Here we report on the distinct character of the analogous transition for nanoscale spin textures in chiral Co/Pt-based multilayer films, known to host Néel skyrmions, using microscopy, magnetometry, and micromagnetic simulations. Upon increasing field, individual stripes fission into multiple skyrmions, and this transition exhibits a macroscopic signature of irreversibility. Crucially, upon field reversal, the skyrmions do not fuse back into stripes, with many skyrmions retaining their morphology down to zero field. Both the macroscopic irreversibility and the microscopic zero-field skyrmion density are governed by the thermodynamic material parameter determining chiral domain stability. These results establish the thermodynamic and microscopic framework underlying ambient skyrmion generation and stability in chiral multilayer films and provide immediate directions for their functionalization in devices.
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Submitted 29 January, 2021;
originally announced January 2021.
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Multi-Angle Reconstruction of Domain Morphology with All-Optical Diamond Magnetometry
Authors:
Lucio Stefan,
Anthony K. C. Tan,
Baptiste Vindolet,
Michael Högen,
Dickson Thian,
Hang Khume Tan,
Loïc Rondin,
Helena S. Knowles,
Jean-François Roch,
Anjan Soumyanarayanan,
Mete Atatüre
Abstract:
Scanning diamond magnetometers based on the optically detected magnetic resonance of the nitrogen-vacancy centre offer very high sensitivity and non-invasive imaging capabilities when the stray fields emanating from ultrathin magnetic materials are sufficiently low (< 10 mT). Beyond this low-field regime, the optical signal quenches and a quantitative measurement is challenging. While the field-de…
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Scanning diamond magnetometers based on the optically detected magnetic resonance of the nitrogen-vacancy centre offer very high sensitivity and non-invasive imaging capabilities when the stray fields emanating from ultrathin magnetic materials are sufficiently low (< 10 mT). Beyond this low-field regime, the optical signal quenches and a quantitative measurement is challenging. While the field-dependent NV photoluminescence can still provide qualitative information on magnetic morphology, this operation regime remains unexplored particularly for surface magnetisation larger than $\sim$ 3 mA. Here, we introduce a multi-angle reconstruction technique (MARe) that captures the full nanoscale domain morphology in all magnetic-field regimes leading to NV photoluminescence quench. To demonstrate this, we use [Ir/Co/Pt]$_{14}$ multilayer films with surface magnetisation an order of magnitude larger than previous reports. Our approach brings non-invasive nanoscale magnetic field imaging capability to the study of a wider pool of magnetic materials and phenomena.
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Submitted 25 January, 2021;
originally announced January 2021.
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Anisotropic longitudinal optical conductivities of tilted Dirac bands in 1T$^\prime$-MoS$_2$
Authors:
Chao-Yang Tan,
Chang-Xu Yan,
Yong-Hong Zhao,
Hong Guo,
Hao-Ran Chang
Abstract:
1T$^\prime$-MoS$_2$ exhibits valley-spin-polarized tilted Dirac bands in the presence of external vertical electric field and undergoes a topological phase transition between the topological insulator and band insulator around the critical value of the electric field. Within the linear response theory, we theoretically investigate the anisotropic longitudinal optical conductivities of tilted Dirac…
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1T$^\prime$-MoS$_2$ exhibits valley-spin-polarized tilted Dirac bands in the presence of external vertical electric field and undergoes a topological phase transition between the topological insulator and band insulator around the critical value of the electric field. Within the linear response theory, we theoretically investigate the anisotropic longitudinal optical conductivities of tilted Dirac bands in both undoped and doped 1T$^\prime$-MoS$_2$, including the effects of the vertical electric field. The influence of the spin-orbit coupling gap, band tilting, and vertical electric field on the optical conductivities of tilted Dirac bands is revealed. A theoretical scheme for probing the topological phase transition in 1T$^\prime$-MoS$_2$ via exotic behaviors of longitudinal optical conductivities is proposed. The results for 1T$^\prime$-MoS$_2$ are expected to be qualitatively valid for other monolayer tilted gapped Dirac materials, such as $α$-SnS$_2$, TaCoTe$_2$, and TaIrTe$_4$, due to the similarity in their band structures.
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Submitted 31 March, 2021; v1 submitted 22 December, 2020;
originally announced December 2020.
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Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$
Authors:
Cheng Tan,
Wen-Qiang Xie,
Guolin Zheng,
Nuriyah Aloufi,
Sultan Albarakati,
Meri Algarni,
Jiangpeng Song,
James Partridge,
Dimitrie Culcer,
Xiaolin Wang,
Jiabao Yi,
Yimin Xiong,
Mingliang Tian,
Yu-Jun Zhao,
Lan Wang
Abstract:
Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW…
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Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron do** implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.
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Submitted 1 December, 2020;
originally announced December 2020.
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Dual-gated graphene devices for near-field nano-imaging
Authors:
Sai S. Sunku,
Dorri Halbertal,
Rebecca Engelke,
Hyobin Yoo,
Nathan R. Finney,
Nicola Curreli,
Guangxin Ni,
Cheng Tan,
Alexander S. McLeod,
Chiu Fan Bowen Lo,
Cory R. Dean,
James C. Hone,
Philip Kim,
Dmitri N. Basov
Abstract:
Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmo…
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Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible (Ref. 1). In this work, we fully characterize two approaches to realizing nano-optics compatible top-gates: bilayer $\text{MoS}_2$ and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.
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Submitted 21 March, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
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Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation
Authors:
Guolin Zheng,
Maoyuan Wang,
Xiangde Zhu,
Cheng Tan,
Jie Wang,
Sultan Albarakati,
Nuriyah Aloufi,
Meri Algarni,
Lawrence Farrar,
Min Wu,
Yugui Yao,
Mingliang Tian,
Jianhui Zhou,
Lan Wang
Abstract:
Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the…
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Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity of 1.4 uohm.cm at -5.2V (about 460% of the zero-bias value) is larger than most of the known magnetic materials. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2HTaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.
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Submitted 15 June, 2021; v1 submitted 4 November, 2020;
originally announced November 2020.
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Determination of the spin orientation of helical electrons in monolayer WTe2
Authors:
Cheng Tan,
Ming-Xun Deng,
Feixiang Xiang,
Guolin Zheng,
Sultan Albarakati,
Meri Algarni,
James Partridge,
Alex R. Hamilton,
Rui-Qiang Wang,
Lan Wang
Abstract:
Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical…
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Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical electrons in WTe2. Based on the predictions of the model, angular dependent magnetoresistance measurements were carried out. The experimental results fully supported the model and the spin orientation of the helical edge electrons was determined. Our results not only demonstrate that WTe2 is indeed a QSHI, but also suggest a convenient method to determine the spin orientation of other QSHIs.
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Submitted 29 October, 2020;
originally announced October 2020.
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Quantum stochastic series expansion methods
Authors:
Kok Chuan Tan,
Dhiman Bowmick,
Pinaki Sengupta
Abstract:
A quantum implementation of the Stochastic Series Expansion (SSE) Monte Carlo method is proposed, and it is shown that quantum SSE offers significant advantages over classical implementations of SSE. In particular, for problems where classical SSE encounters the sign problem, the cost of implementing a Monte Carlo iteration scales only linearly with system size in quantum SSE, while it may scale e…
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A quantum implementation of the Stochastic Series Expansion (SSE) Monte Carlo method is proposed, and it is shown that quantum SSE offers significant advantages over classical implementations of SSE. In particular, for problems where classical SSE encounters the sign problem, the cost of implementing a Monte Carlo iteration scales only linearly with system size in quantum SSE, while it may scale exponentially with system size in classical SSE. In cases where classical SSE can be efficiently implemented, quantum SSE still offers an advantage by allowing for more general observables to be measured.
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Submitted 2 October, 2020;
originally announced October 2020.
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Fast quantum imaginary time evolution
Authors:
Kok Chuan Tan
Abstract:
A fast implementation of the quantum imaginary time evolution (QITE) algorithm called Fast QITE is proposed. The algorithmic cost of QITE typically scales exponentially with the number of particles it nontrivially acts on in each Trotter step. In contrast, a Fast QITE implementation reduces this to only a linear scaling. It is shown that this speed up leads to a quantum advantage when sampling dia…
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A fast implementation of the quantum imaginary time evolution (QITE) algorithm called Fast QITE is proposed. The algorithmic cost of QITE typically scales exponentially with the number of particles it nontrivially acts on in each Trotter step. In contrast, a Fast QITE implementation reduces this to only a linear scaling. It is shown that this speed up leads to a quantum advantage when sampling diagonal elements of a matrix exponential, which cannot be achieved using the standard implementation of the QITE algorithm. Finally the cost of implementing Fast QITE for finite temperature simulations is also discussed.
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Submitted 25 September, 2020;
originally announced September 2020.
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Weak localization and anti-localization in rare earth doped topological insulators
Authors:
Zengji Yue,
Kirrily Rule,
Zhi Li,
Weiyao Zhao,
Lina Sang,
Guangsai Yang,
Cheng Tan,
Lan Wang,
Abuduliken Bake,
Xiaolin Wang
Abstract:
We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization…
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We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a systematic crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-do** induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition between weak localization and weak anti-localization demonstrates a gap opening at the Dirac point of surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element do**. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results hold potential for the realization of exotic topological effects in gapped topological insulator surface states.
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Submitted 10 August, 2020;
originally announced August 2020.
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Muon Spin Relaxation and fluctuating magnetism in the pseudogap phase of YBa$_{2}$Cu$_{3}$O$_{y}$
Authors:
Zihao Zhu,
Jian Zhang,
Zhaofeng Ding,
Cheng Tan,
Changsheng Chen,
Qiong Wu,
Yanxing Yang,
Oscar O. Bernal,
Pei-Chun Ho,
Gerald D. Morris,
Akihiro Koda,
Adrian D. Hillier,
Stephen P. Cottrell,
Peter J. Baker,
Pabitra K. Biswas,
Jun Qian,
Xin Yao,
Douglas E. MacLaughlin,
Lei Shu
Abstract:
We report results of a muon spin relaxation study of slow magnetic fluctuations in the pseudogap phase of underdoped single-crystalline YBa$_{2}$Cu$_{3}$O$_{y}$, $y = 6.77$ and 6.83. The dependence of the dynamic muon spin relaxation rate on applied magnetic field yields the rms magnitude~$B\mathrm{_{loc}^{rms}}$ and correlation time~$τ_c$ of fluctuating local fields at muon sites. The observed re…
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We report results of a muon spin relaxation study of slow magnetic fluctuations in the pseudogap phase of underdoped single-crystalline YBa$_{2}$Cu$_{3}$O$_{y}$, $y = 6.77$ and 6.83. The dependence of the dynamic muon spin relaxation rate on applied magnetic field yields the rms magnitude~$B\mathrm{_{loc}^{rms}}$ and correlation time~$τ_c$ of fluctuating local fields at muon sites. The observed relaxation rates do not decrease with decreasing temperature~$T$ below the pseudogap onset at $T^\ast$, as would be expected for a conventional magnetic transition; both $B\mathrm{_{loc}^{rms}}$ and $τ_c$ are roughly constant in the pseudogap phase down to the superconducting transition. Corresponding NMR relaxation rates are estimated to be too small to be observable. Our results put strong constraints on theories of the anomalous pseudogap magnetism in YBa$_{2}$Cu$_{3}$O$_{y}$.
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Submitted 31 July, 2020;
originally announced August 2020.