Photoluminescence map** and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide
Authors:
Shuai Yue,
Geethal Amila Gamage,
Mohammadjavad Mohebinia,
David Mayerich,
Vishal Talari,
Yu Deng,
Fei Tian,
Shenyu Dai,
Haoran Sun,
Viktor G. Hadjiev,
Wei Zhang,
Guoying Feng,
Jonathan Hu,
Dong Liu,
Zhiming Wang,
Zhifeng Ren,
Jiming Bao
Abstract:
Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urg…
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Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urgent demand for fast screening of high \k{appa} materials. After we experimentally established 1.82 eV as the indirect bandgap of BAs and observed room-temperature band-edge photoluminescence, we developed two new optical techniques that can provide rapid and non-destructive characterization of \k{appa} with little sample preparation: photoluminescence map** (PL-map**) and time-domain thermo-photoluminescence (TDTP). PL-map** provides nearly real-time image of crystal quality and \k{appa} over mm-sized crystal surfaces; while TDTP allows us to pick up any spot on the sample surface and measure its \k{appa} using nanosecond laser pulses. These new techniques reveal that the apparent single crystals are not only non-uniform in \k{appa}, but also are made of domains of very distinct \k{appa}. Because PL-map** and TDTP are based on the band-edge PL and its dependence on temperature, they can be applied to other semiconductors, thus paving the way for rapid identification and development of high-\k{appa} semiconducting materials.
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Submitted 15 October, 2019;
originally announced October 2019.
