Showing 1–18 of 18 results for author: Takeda, T

SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yuichi Seki, Kohei Yamagami, Takahito Takeda, Takuo Ohkochi, Yoshitaka Taniyasu, Yoshiharu Krockenberger, Hideki Yamamoto

Abstract: The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains e… ▽ More The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Mechanism of ferromagnetism enhancement in a La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ membrane released from epitaxial strain

Authors: Takahito Takeda, Takuma Arai, Kohei Yamagami, Le Duc Anh, Masaaki Tanaka, Masaki Kobayashi, Shinobu Ohya

Abstract: Recent studies have shown that the magnetic properties of the ferromagnetic perovskite oxide La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ (LSMO) grown on an SrTiO3 (STO) substrate, such as its magnetic moment and Curie temperature, can be improved by releasing the film from the substrate. However, the microscopic origin of this enhancement is not yet well understood. In this study, we use synchrotron radiation m… ▽ More Recent studies have shown that the magnetic properties of the ferromagnetic perovskite oxide La$_{2/3}$ Sr$_{1/3}$ MnO$_3$ (LSMO) grown on an SrTiO3 (STO) substrate, such as its magnetic moment and Curie temperature, can be improved by releasing the film from the substrate. However, the microscopic origin of this enhancement is not yet well understood. In this study, we use synchrotron radiation measurements to investigate the mechanism of ferromagnetism enhancement in an LSMO membrane released from an STO substrate by dissolving a water-soluble Sr$_4$Al$_2$O$_7$ buffer layer. Using resonant photoemission spectroscopy on the as-grown LSMO film and LSMO membrane, we elucidate that the strain release from the STO substrate enhances the itineracy of the Mn-3d electrons via p-d hybridization, and this strengthens the double-exchange interaction. The reinforcement of the double-exchange interaction, in turn, improves the ferromagnetism of LSMO. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Identification of electronic dimensionality reduction in semiconductor quantum well structures

Authors: Takahito Takeda, Kengo Takase, Vladimir N. Strocov, Masaaki Tanaka, Masaki Kobayashi

Abstract: Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized… ▽ More Two-dimensional (2D) systems, such as high-temperature superconductors, surface states of topological insulators, and layered materials, have been intensively studied using vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES). In semiconductor films (heterostructures), quantum well (QW) states arise due to electron/hole accumulations at the surface (interface). The quantized states due to quantum confinement can be observed by VUV-ARPES, while the periodic intensity modulations along the surface normal (kz) direction of these quantized states are also observable by varying incident photon energy, resembling three-dimensional (3D) band dispersion. We have conducted soft X-ray (SX) ARPES measurements on thick and ultrathin III-V semiconductor InSb(001) films to investigate the electronic dimensionality reduction in semiconductor QWs. In addition to the dissipation of the kz dispersion, the SX-ARPES observations demonstrate the changes of the symmetry and periodicity of the Brillouin zone in the ultrathin film as 2D QW compared with these of the 3D bulk one, indicating the electronic dimensionality reduction of the 3D bulk band dispersion caused by the quantum confinement. The results provide a critical diagnosis using SX-ARPES for the dimensionality reduction in semiconductor QW structures. △ Less

Submitted 17 April, 2024; v1 submitted 18 October, 2023; originally announced October 2023.

Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam

Authors: Kohdai Inagaki, Keita Ishihara, Tomoki Hotta, Yuichi Seki, Takahito Takeda, Tatsuhiro Ishida, Daiki Ootsuki, Ikuto Kawasaki, Shin-ichi Fujimori, Masaaki Tanaka, Le Duc Anh, Masaki Kobayashi

Abstract: Diamond-type structure allotrope α-Sn is attracting much attention as a topological Dirac semimetal (TDS). In this study, we demonstrate that α-Sn undergoes a phase transition to another allotrope β-Sn with superconductivity at low temperature by irradiating with a focused Ga ion beam (FIB). To clarify the transition mechanism, we performed X-ray photoemission spectroscopy (XPS) measurements on an… ▽ More Diamond-type structure allotrope α-Sn is attracting much attention as a topological Dirac semimetal (TDS). In this study, we demonstrate that α-Sn undergoes a phase transition to another allotrope β-Sn with superconductivity at low temperature by irradiating with a focused Ga ion beam (FIB). To clarify the transition mechanism, we performed X-ray photoemission spectroscopy (XPS) measurements on an α-Sn thin film irradiated with FIB and an as-grown α-Sn thin film. The XPS results suggest that the local annealing, which is one of the side effects of FIB, causes the transformation from α-Sn into β-Sn. Furthermore, the difference in the chemical states between α-Sn and β-Sn can be quantitatively explained by the crystal structures rather than the degree of metallicity reflecting the conductivity. These results propose a new way of fabricating TDS/superconductor in-plane heterostructures based on α-Sn and β-Sn. △ Less

Submitted 1 October, 2023; originally announced October 2023.

Comments: 18 pages, 5 figures

Imaging emergent exotic quasiparticle state in a frustrated transition metal oxide

Authors: Yuita Fujisawa, Anjana Krishnadas, Chia-Hsiu Hsu, Takahito Takeda, Sheng Liu, Markel Pardo-Almanza, Yukiko Obata, Dyon van Dinter, Kohei Yamagami, Guoqing Chang, Masaki Kobayashi, Chang-Yang Kuo, Yoshinori Okada

Abstract: The existence of rich Fermiology in anomalous metal phase in exotic superconductors has attracted considerable interests, as exemplified in copper, iron-based, and intermetallic frustrated kagome-based compounds. A common feature in these cases is pseudo-gap opening or long-range lattice/electronic ordering above superconducting critical temperature Tc. As yet developed area is the potential exist… ▽ More The existence of rich Fermiology in anomalous metal phase in exotic superconductors has attracted considerable interests, as exemplified in copper, iron-based, and intermetallic frustrated kagome-based compounds. A common feature in these cases is pseudo-gap opening or long-range lattice/electronic ordering above superconducting critical temperature Tc. As yet developed area is the potential existence of exotic Fermiology in superconducting transition metal oxides on a geometrically frustrated lattice. Here, we focus on the spinel oxide superconductor LiTi2O4, which can be viewed as the hole-doped side of the orbital ordered 3d1 Mott system on the Ti-derived pyrochlore frustrated network. By the in-situ combination of angle-resolved photoemission spectroscopy (ARPES) and epitaxial thin film growth, we discovered the abrupt flattening of near Fermi energy dispersion below the characteristic temperature T* ~ 150 K. While the emergent negative thermal expansion below T* strongly supports a distinct phase at low-temperature, absence of energy gap opening, splitting/folding of bands, nor long-range lattice distortion are seen across T*. We propose that the competition between growing instability towards orbital ordering and its inherent geometric frustration in the Ti-pyrochlore network results in a new quantum state of matter with robust high entropic nature below T*. Our findings collectively point to a unique Fermiology in frustrated three-dimensional transition metal oxides, and its connection to superconductivity below Tc is open as an interesting future challenge. Also, a potential guideline is unexpectedly provided for designing zero thermal expansion metal to develop future solid-state devices. △ Less

Submitted 11 June, 2023; originally announced June 2023.

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Miho Kitamura, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic… ▽ More Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy

Authors: M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, P. N. Hai

Abstract: Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-… ▽ More Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the $k_x$-$k_y$ plane overlap** neighboring Fermi surfaces. The $k_z$ dependence of the band structure suggests that the band dispersion observed by ARPES comes from the three-dimensional band structure of MnGa folded by a $\sqrt{2} \times \sqrt{2}$ reconstruction. The band dispersion across the corner of the rhombic Fermi surface forms an electron pocket with a weak $k_z$ dependence. The effective mass and the mobility of the bands crossing the Fermi level near the corner are estimated from the ARPES images. Based on the experimental findings, the relationship between the observed band structure and the spin-dependent properties in MnGa-based heterostructures is discussed. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Comments: 20 pages, 7 figures

Journal ref: Phys. Rev. Materials 6, 074403 (2022)

Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in n-type ferromagnetic semiconductor (In,Fe)Sb

Authors: Ryo Okano, Tomoki Hotta, Takahito Takeda, Kohsei Araki, Kengo Takase, Le Duc Anh, Shoya Sakamoto, Yukiharu Takeda, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray abso… ▽ More Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe L2,3 edges. The magnetic-field dependence of the XMCD spectra reveals that there are ferromagnetic-like Fe and paramagnetic-like Fe components in the (In,Fe)Sb thin film. The XAS and XMCD spectra of the ferromagnetic-like and paramagnetic-like Fe components resemble those of other Fe-doped FMSs and extrinsic oxides, respectively. The finite value of the ratio between the orbital and spin magnetic moments estimated by applying the XMCD sum rules indicates that the valence state of the Fe ions substituting for the In sites in (In,Fe)Sb is not purely ionic Fe3+, but intermediate between Fe3+ and Fe2+. The qualitative correspondence between the magnetic-field dependence of the visible-light magnetic circular dichroism intensity and that of the XMCD intensity demonstrates that the Zeeman splitting of the InSb band is proportional to the net magnetization of the doped Fe. These results suggest that the ferromagnetism of (In,Fe)Sb originates from the Fe 3d orbitals hybridized with the host InSb bands. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 24 pages, 4 figures

Magnetic anisotropy of the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ studied by angular-dependent XMCD

Authors: M. Suzuki, B. Gao, G. Shibata, S. Sakamoto, Y. Nonaka, K. Ikeda, Z. Chi, Y. -X. Wan, T. Takeda, Y. Takeda, T. Koide, A. Tanaka, M. Kobayashi, S. -W. Cheong, A. Fujimori

Abstract: The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectr… ▽ More The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectra at the Cr $L_{2,3}$ edge for different magnetic field directions were analyzed on the basis of the cluster-model multiplet calculation. The Cr valence is confirmed to be 3+ and the orbital magnetic moment is found to be nearly quenched, as expected for the high-spin $t_{2g}$$^3$ configuration of the Cr$^{3+}$ ion. A large ($\sim 0.2$ eV) trigonal crystal-field splitting of the $t_{2g}$ level caused by the distortion of the CrTe$_6$ octahedron has been revealed, while the single-ion anisotropy (SIA) of the Cr atom is found to have a sign {\it opposite} to the observed PMA and too weak compared to the reported anisotropy energy. The present result suggests that anisotropic exchange coupling between the Cr atoms through the ligand Te $5p$ orbitals having strong spin-orbit coupling has to be invoked to explain the weak PMA of CGT, as in the case of the strong PMA of CrI$_3$. △ Less

Submitted 13 September, 2021; originally announced September 2021.

Comments: 17 pages, 5 figures

Journal ref: Phys. Rev. Research 4, 013139 (2022)

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Authors: Takahito Takeda, Shoya Sakamoto, Le Duc Anh, Yukiharu Takeda, Shin-ichi Fujimori, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of… ▽ More Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film

Authors: Yuki K. Wakabayashi, Masaki Kobayashi, Yukiharu Takeda, Kosuke Takiguchi, Hiroshi Irie, Shin-ichi Fujimori, Takahito Takeda, Ryo Okano, Yoshiharu Krockenberger, Yoshitaka Taniyasu, Hideki Yamamoto

Abstract: We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission s… ▽ More We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The ultra-high-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Itinerant ferromagnetism mediated by giant spin polarization of metallic ligand band in van der Waals magnet Fe5GeTe2

Authors: K. Yamagami, Y. Fujisawa, B. Driesen, C. H. Hsu, K. Kawaguchi, H. Tanaka, T. Kondo, Y. Zhang, H. Wadati, K. Araki, T. Takeda, Y. Takeda, T. Muro, F. C. Chuang, Y. Niimi, K. Kuroda, M. Kobayashi, Y. Okada

Abstract: We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongl… ▽ More We investigate near-Fermi-energy (EF) element-specific electronic and spin states of ferromagnetic van der Waals (vdW) metal Fe5GeTe2. The soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) measurement provides spectroscopic evidence of localized Fe 3d band. We also find prominent hybridization between the localized Fe 3d band and the delocalized Ge/Te p bands. This picture is strongly supported from direct observation of the remarkable spin polarization of the ligand p bands near EF, using x-ray magnetic circular dichroism (XMCD) measurements. The strength of XMCD signal from ligand element Te shows the highest value, as far as we recognize, among literature reporting finite XMCD signal for none-magnetic element in any systems. Combining SX-ARPES and elemental selective XMCD measurements, we collectively point an important role of giant spin polarization of the delocalized ligand Te states for realizing itinerant long-range ferromagnetism in Fe5GeTe2. Our finding provides a fundamental elemental selective view-point for understanding mechanism of itinerant ferromagnetism in low dimensional compounds, which also leads insight for designing exotic magnetic states by interfacial band engineering in heterostructures. △ Less

Submitted 4 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 103, 060403 (2021)

Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

Authors: Takahito Takeda, Shoya Sakamoto, Kohsei Araki, Yuita Fujisawa, Le Duc Anh, Nguyen Thanh Tu, Yukiharu Takeda, Shin-ichi Fujimori, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: (Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-p… ▽ More (Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb. △ Less

Submitted 18 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 102, 245203 (2020)

Tailoring Magnetism in Self-intercalated Cr1+δTe2 Epitaxial Films

Authors: Y. Fujisawa, M. Pardo-Almanza, J. Garland, K. Yamagami, X. Zhu, X. Chen, K. Araki, T. Takeda, M. Kobayashi, Y. Takeda, C. H. Hsu, F. C. Chuang, R. Laskowski, K. H. Khoo, A. Soumyanarayanan, Y. Okada

Abstract: Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxi… ▽ More Magnetic transition metal dichalcogenide (TMD) films have recently emerged as promising candidates to host novel magnetic phases relevant to next-generation spintronic devices. However, systematic control of the magnetization orientation, or anisotropy, and its thermal stability, characterized by Curie temperature (Tc) remains to be achieved in such films. Here we present self-intercalated epitaxial Cr1+δTe2 films as a platform for achieving systematic/smooth magnetic tailoring in TMD films. Using a molecular beam epitaxy (MBE) based technique, we have realized epitaxial Cr1+δTe2 films with smoothly tunable over a wide range (0.33-0.82), while maintaining NiAs-type crystal structure. With increasing δ, we found monotonic enhancement of Tc from 160 to 350 K, and the rotation of magnetic anisotropy from out-of-plane to in-plane easy axis configuration for fixed film thickness. Contributions from conventional dipolar and orbital moment terms are insufficient to explain the observed evolution of magnetic behavior with δ. Instead, ab initio calculations suggest that the emergence of antiferromagnetic interactions with δ, and its interplay with conventional ferromagnetism, may play a key role in the observed trends. To our knowledge, this constitutes the first demonstration of tunable Tc and magnetic anisotropy across room temperature in TMD films, and paves the way for engineering novel magnetic phases for spintronic applications. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Materials 4, 114001 (2020)

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

Authors: Takahito Takeda, Masahiro Suzuki, Le Duc Anh, Nguyen Thanh Tu, Thorsten Schmitt, Satoshi Yoshida, Masato Sakano, Kyoko Ishizaka, Yukiharu Takeda, Shin-ichi Fijimori, Munetoshi Seki, Hitoshi Tabata, Atsushi Fujimori, Vladimir N. Strocov, Masaaki Tanaka, Masaki Kobayashi

Abstract: (Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe… ▽ More (Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Comments: 24 pages, 6 figures

Journal ref: Phys. Rev. B 101, 155142 (2020)

A swollen phase observed between the liquid-crystalline phase and the interdigitated phase induced by pressure and/or adding ethanol in DPPC aqueous solution

Authors: H. Seto, M. Hishida, H. Nobutou, N. L. Yamada, M. Nagao, T. Takeda

Abstract: A swollen phase, in which the mean repeat distance of lipid bilayers is larger than the other phases, is found between the liquid-crystalline phase and the interdigitated gel phase in DPPC aqueous solution. Temperature, pressure and ethanol concentration dependences of the structure were investigated by small-angle neutron scattering, and a bending rigidity of lipid bilayers was by neutron spin… ▽ More A swollen phase, in which the mean repeat distance of lipid bilayers is larger than the other phases, is found between the liquid-crystalline phase and the interdigitated gel phase in DPPC aqueous solution. Temperature, pressure and ethanol concentration dependences of the structure were investigated by small-angle neutron scattering, and a bending rigidity of lipid bilayers was by neutron spin echo. The nature of the swollen phase is similar to the anomalous swelling reported previously. However, the temperature dependence of the mean repeat distance and the bending rigidity of lipid bilayers are different. This phase could be a precursor to the interdigitated gel phase induced by pressure and/or adding ethanol. △ Less

Submitted 21 February, 2006; originally announced February 2006.

Comments: 7 pages, 6 figures

Optical investigations on $Y_{2-x} Bi_x Ru_2 O_7$: Electronic structure evolutions related to the metal-insulator transition

Authors: J. S. Lee, S. J. Moon, T. W. Noh, T. Takeda, R. Kanno, S. Yoshii, M. Sato

Abstract: Optical conductivity spectra of cubic pyrochlore $Y_{2-x} Bi_x Ru_2 O_7$ (0.0$\leq ${\it x}$\leq $2.0) compounds are investigated. As a metal-insulator transition (MIT) occurs around {\it x}$=$0.8, large spectral changes are observed. With increase of {\it x}, the correlation-induced peak between the lower and the upper Hubbard bands seems to be suppressed, and a strong mid-infrared feature is o… ▽ More Optical conductivity spectra of cubic pyrochlore $Y_{2-x} Bi_x Ru_2 O_7$ (0.0$\leq ${\it x}$\leq $2.0) compounds are investigated. As a metal-insulator transition (MIT) occurs around {\it x}$=$0.8, large spectral changes are observed. With increase of {\it x}, the correlation-induced peak between the lower and the upper Hubbard bands seems to be suppressed, and a strong mid-infrared feature is observed. In addition, the $p-d$ charge transfer peak shifts to the lower energies. The spectral changes cannot be explained by electronic structural evolutions in the simple bandwidth-controlled MIT picture, but are consistent with those in the filling-controlled MIT picture. In addition, they are also similar to the spectral changes of Y$_{2-x}$Ca$_{x}$Ru$_{2}$O$_{7}$ compounds, which is a typical filling-controlled system. This work suggests that, near the MIT, the Ru bands could be doped with the easily polarizable Bi cations. △ Less

Submitted 25 April, 2005; originally announced April 2005.

Comments: 5 figures

Optical investigation on the electronic structures of Y_{2}Ru_{2}O_{7}, CaRuO_{3}, SrRuO_{3}, and Bi_{2}Ru_{2}O_{7}

Authors: J. S. Lee, Y. S. Lee, T. W. Noh, K. Char, Jonghyurk Park, S. -J. Oh, J. -H. Park, C. B. Eom, T. Takeda, R. Kanno

Abstract: We investigated the electronic structures of the bandwidth-controlled ruthenates, Y$_{2}$Ru$_{2}$O$_{7}$, CaRuO$_{3}$, SrRuO$_{3}$, and Bi$_{2}$Ru$% _{2}$O$_{7}$, by optical conductivity analysis in a wide energy region of 5 meV $\sim $ 12 eV. We could assign optical transitions from the systematic changes of the spectra and by comparison with the O 1$s$ x-ray absorption data. We estimated some… ▽ More We investigated the electronic structures of the bandwidth-controlled ruthenates, Y$_{2}$Ru$_{2}$O$_{7}$, CaRuO$_{3}$, SrRuO$_{3}$, and Bi$_{2}$Ru$% _{2}$O$_{7}$, by optical conductivity analysis in a wide energy region of 5 meV $\sim $ 12 eV. We could assign optical transitions from the systematic changes of the spectra and by comparison with the O 1$s$ x-ray absorption data. We estimated some physical parameters, such as the on-site Coulomb repulsion energy and the crystal-field splitting energy. These parameters show that the 4$d$ orbitals should be more extended than 3$d$ ones. These results are also discussed in terms of the Mott-Hubbard model. △ Less

Submitted 18 July, 2001; originally announced July 2001.

Comments: 12 pages (1 table), 3 figures