Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers
Authors:
S. Nath,
I. Turan,
L. Desvignes,
L. Largeau,
O. Mauguin,
M. Túnica,
M. Amato,
C. Renard,
G. Hallais,
D. Débarre,
F. Chiodi
Abstract:
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser ann…
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Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B do** affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$.
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Submitted 3 April, 2024;
originally announced April 2024.
