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Effects of degumming conditions on the structure of the regenerated silk fibroin and the properties of its film
Authors:
Ruixue Sun,
Junli Hu
Abstract:
The traditional degumming method using sodium carbonate solution severely damages the structure of silk fibroin and results in low molecular weight, which limits the properties and applications of silk materials. In this study, we report a modified degumming method and compared it with the traditional one. The results indicate that compared with the traditional degumming method, the modified degum…
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The traditional degumming method using sodium carbonate solution severely damages the structure of silk fibroin and results in low molecular weight, which limits the properties and applications of silk materials. In this study, we report a modified degumming method and compared it with the traditional one. The results indicate that compared with the traditional degumming method, the modified degumming method produces silk fibroin with higher \b{eta}-sheet content (53.43% vs 46.68%), higher crystallinity (44.92% vs 42.72%), and more concentrated molecular weight (100 ~ 300 kDa vs 72 ~ 300 kDa), while allowing for the same full removal of sericin. Correspondingly, the film of the silk fibroin prepared with the modified degumming method exhibits higher \b{eta}-sheet content (35.22% vs 32.82%), higher crystallinity (26.96% vs 25.53%), and higher tensile strength (87.91 MPa vs 72.62 MPa). This work provides a degumming method superior to the traditional one and lays a foundation for the development of high-performance silk materials.
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Submitted 31 May, 2024;
originally announced May 2024.
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Chemistry Beyond Exact Solutions on a Quantum-Centric Supercomputer
Authors:
Javier Robledo-Moreno,
Mario Motta,
Holger Haas,
Ali Javadi-Abhari,
Petar Jurcevic,
William Kirby,
Simon Martiel,
Kunal Sharma,
Sandeep Sharma,
Tomonori Shirakawa,
Iskandar Sitdikov,
Rong-Yang Sun,
Kevin J. Sung,
Maika Takita,
Minh C. Tran,
Seiji Yunoki,
Antonio Mezzacapo
Abstract:
A universal quantum computer can be used as a simulator capable of predicting properties of diverse quantum systems. Electronic structure problems in chemistry offer practical use cases around the hundred-qubit mark. This appears promising since current quantum processors have reached these sizes. However, map** these use cases onto quantum computers yields deep circuits, and for for pre-fault-t…
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A universal quantum computer can be used as a simulator capable of predicting properties of diverse quantum systems. Electronic structure problems in chemistry offer practical use cases around the hundred-qubit mark. This appears promising since current quantum processors have reached these sizes. However, map** these use cases onto quantum computers yields deep circuits, and for for pre-fault-tolerant quantum processors, the large number of measurements to estimate molecular energies leads to prohibitive runtimes. As a result, realistic chemistry is out of reach of current quantum computers in isolation. A natural question is whether classical distributed computation can relieve quantum processors from parsing all but a core, intrinsically quantum component of a chemistry workflow. Here, we incorporate quantum computations of chemistry in a quantum-centric supercomputing architecture, using up to 6400 nodes of the supercomputer Fugaku to assist a Heron superconducting quantum processor. We simulate the N$_2$ triple bond breaking in a correlation-consistent cc-pVDZ basis set, and the active-space electronic structure of [2Fe-2S] and [4Fe-4S] clusters, using 58, 45 and 77 qubits respectively, with quantum circuits of up to 10570 (3590 2-qubit) quantum gates. We obtain our results using a class of quantum circuits that approximates molecular eigenstates, and a hybrid estimator. The estimator processes quantum samples, produces upper bounds to the ground-state energy and wavefunctions supported on a polynomial number of states. This guarantees an unconditional quality metric for quantum advantage, certifiable by classical computers at polynomial cost. For current error rates, our results show that classical distributed computing coupled to quantum processors can produce good approximate solutions for practical problems beyond sizes amenable to exact diagonalization.
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Submitted 8 May, 2024;
originally announced May 2024.
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Unveiling clean two-dimensional discrete time quasicrystals on a digital quantum computer
Authors:
Kazuya Shinjo,
Kazuhiro Seki,
Tomonori Shirakawa,
Rong-Yang Sun,
Seiji Yunoki
Abstract:
In periodically driven (Floquet) systems, evolution typically results in an infinite-temperature thermal state due to continuous energy absorption over time. However, before reaching thermal equilibrium, such systems may transiently pass through a meta-stable state known as a prethermal state. This prethermal state can exhibit phenomena not commonly observed in equilibrium, such as discrete time c…
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In periodically driven (Floquet) systems, evolution typically results in an infinite-temperature thermal state due to continuous energy absorption over time. However, before reaching thermal equilibrium, such systems may transiently pass through a meta-stable state known as a prethermal state. This prethermal state can exhibit phenomena not commonly observed in equilibrium, such as discrete time crystals (DTCs), making it an intriguing platform for exploring out-of-equilibrium dynamics. Here, we investigate the relaxation dynamics of initially prepared product states under periodic driving in a kicked Ising model using the IBM Quantum Heron processor, comprising 133 superconducting qubits arranged on a heavy-hexagonal lattice, over up to $100$ time steps. We identify the presence of a prethermal regime characterised by magnetisation measurements oscillating at twice the period of the Floquet cycle and demonstrate its robustness against perturbations to the transverse field. Our results provide evidence supporting the realisation of a period-doubling DTC in a two-dimensional system. Moreover, we discover that the longitudinal field induces additional amplitude modulations in the magnetisation with a period incommensurate with the driving period, leading to the emergence of discrete time quasicrystals (DTQCs). These observations are further validated through comparison with tensor-network and state-vector simulations. Our findings not only enhance our understanding of clean DTCs in two dimensions but also highlight the utility of digital quantum computers for simulating the dynamics of quantum many-body systems, addressing challenges faced by state-of-the-art classical simulations.
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Submitted 25 March, 2024;
originally announced March 2024.
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Improved real-space parallelizable matrix-product state compression and its application to unitary quantum dynamics simulation
Authors:
Rong-Yang Sun,
Tomonori Shirakawa,
Seiji Yunoki
Abstract:
Towards the efficient simulation of near-term quantum devices using tensor network states, we introduce an improved real-space parallelizable matrix-product state (MPS) compression method. This method enables efficient compression of all virtual bonds in constant time, irrespective of the system size, with controlled accuracy, while it maintains the stability of the wavefunction norm without neces…
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Towards the efficient simulation of near-term quantum devices using tensor network states, we introduce an improved real-space parallelizable matrix-product state (MPS) compression method. This method enables efficient compression of all virtual bonds in constant time, irrespective of the system size, with controlled accuracy, while it maintains the stability of the wavefunction norm without necessitating sequential renormalization procedures. In addition, we introduce a parallel regauging technique to partially restore the deviated canonical form, thereby improving the accuracy of the simulation in subsequent steps. We further apply this method to simulate unitary quantum dynamics and introduce a parallel time-evolving block-decimation (pTEBD) algorithm. We employ the pTEBD algorithm for extensive simulations of typical one- and two-dimensional quantum circuits, involving over 1000 qubits. The obtained numerical results unequivocally demonstrate that the pTEBD algorithm achieves the same level of simulation precision as the current state-of-the-art MPS algorithm but in polynomially shorter time, exhibiting nearly perfect weak scaling performance on a modern supercomputer.
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Submitted 5 December, 2023;
originally announced December 2023.
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Efficient variational quantum circuit structure for correlated topological phases
Authors:
Rong-Yang Sun,
Tomonori Shirakawa,
Seiji Yunoki
Abstract:
We propose an efficient circuit structure of variational quantum circuit \textit{Ansätze} used for the variational quantum eigensolver (VQE) algorithm in calculating gapped topological phases on the currently feasible noisy intermediate-scale quantum computers. An efficient circuit \textit{Ansatz} should include two layers: the initialization layer and the variational layer. In the initialization…
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We propose an efficient circuit structure of variational quantum circuit \textit{Ansätze} used for the variational quantum eigensolver (VQE) algorithm in calculating gapped topological phases on the currently feasible noisy intermediate-scale quantum computers. An efficient circuit \textit{Ansatz} should include two layers: the initialization layer and the variational layer. In the initialization layer, a fixed depth circuit state with a compatible entanglement structure to the target topological phase is constructed. The circuit state is further adjusted subsequently to capture the details of the local correlations, which is dictated with the Hamiltonian, in the parametrized variational layer. Based on this strategy, we design a circuit \textit{Ansatz} to investigate the symmetry-protected topological Haldane phase in a \textit{non-exactly} solvable alternating spin-$1/2$ Heisenberg chain by VQE calculations. Main characterizations of the Haldane phase, including the long-ranged string order, the four-fold nearly degenerate ground states associated with four different localized edge mode patterns for the system with open boundaries, and the two-fold degeneracy of the entanglement spectrum, are all observed for the optimized shallow circuit state with only one depth variational layer both in numerical simulations and on real quantum computers. We further demonstrate that the computational capacity (i.e., expressibility) of this quantum circuit \textit{Ansatz} is determined not by the system size but only by the intrinsic correlation length of the system, thus implying that the scalable VQE calculation is possible.
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Submitted 17 August, 2023; v1 submitted 30 March, 2023;
originally announced March 2023.
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Pair density wave characterized by a hidden string order parameter
Authors:
Hao-Kai Zhang,
Rong-Yang Sun,
Zheng-Yu Weng
Abstract:
A composite pairing structure of superconducting state is revealed by density matrix renormalization group study in a two-leg $t$-$J$ model. The pairing order parameter is composed of a pairing amplitude and a phase factor, in which the latter explicitly depends on the spin background with an analytic form identified in the anisotropic limit as the interchain hop** integral…
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A composite pairing structure of superconducting state is revealed by density matrix renormalization group study in a two-leg $t$-$J$ model. The pairing order parameter is composed of a pairing amplitude and a phase factor, in which the latter explicitly depends on the spin background with an analytic form identified in the anisotropic limit as the interchain hop** integral $t_{\perp}\rightarrow 0$. Such a string-like phase factor is responsible for a pair density wave (PDW) induced by spin polarization with a wavevector $Q_{\mathrm {PDW}}=2πm$ ($m$ the magnetization). By contrast, the pairing amplitude remains smooth, unchanged by the PDW. In particular, a local spin polarization can give rise to a sign change of the order parameter across the local defect. Unlike in an Fulde-Ferrell-Larkin-Ovchinnikov state, the nonlocal phase factor here plays a role as the new order parameter characterizing the PDW, whose origin can be traced back to the essential sign structure of the doped Mott insulator.
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Submitted 12 December, 2022;
originally announced December 2022.
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Parametrized quantum circuit for weight-adjustable quantum loop gas
Authors:
Rong-Yang Sun,
Tomonori Shirakawa,
Seiji Yunoki
Abstract:
Motivated by the recent success of realizing the topologically ordered ground state of the exactly solvable toric code model by a quantum circuit on the real quantum device [K. J. Satzinger {\it et al}., Science \textbf{374}, 1237 (2021)], here we propose a parametrized quantum circuit (PQC) with the same real-device-performable optimal structure to represent quantum loop gas states with adjustabl…
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Motivated by the recent success of realizing the topologically ordered ground state of the exactly solvable toric code model by a quantum circuit on the real quantum device [K. J. Satzinger {\it et al}., Science \textbf{374}, 1237 (2021)], here we propose a parametrized quantum circuit (PQC) with the same real-device-performable optimal structure to represent quantum loop gas states with adjustably weighted loop configurations. Combining such a PQC with the variational quantum eigensolver, we obtain the accurate quantum circuit representation for the toric code model in an external magnetic field with any field strength, where the system is not exactly solvable. The topological quantum phase transition in this system is further observed in the optimized circuits by measuring the magnetization and topological entanglement entropy.
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Submitted 26 January, 2023; v1 submitted 26 October, 2022;
originally announced October 2022.
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Molecular mechanism of the Debye relaxation in monohydroxy alcohols revealed from rheo-dielectric spectroscopy
Authors:
Shalin Patil,
Ruikun Sun,
Shinian Cheng,
Shiwang Cheng
Abstract:
Rheodielectric spectroscopy is employed, for the first time, to investigate the effect of external shear on the Debyelike relaxation of a model monohydroxy alcohol, i.e., the 2-ethyl-1-hexanol (2E1H). Shear deformation leads to strong acceleration in the structural relaxation, the Debye relaxation, and the terminal relaxation of 2E1H. Moreover, the shear-induced reduction in structural relaxation…
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Rheodielectric spectroscopy is employed, for the first time, to investigate the effect of external shear on the Debyelike relaxation of a model monohydroxy alcohol, i.e., the 2-ethyl-1-hexanol (2E1H). Shear deformation leads to strong acceleration in the structural relaxation, the Debye relaxation, and the terminal relaxation of 2E1H. Moreover, the shear-induced reduction in structural relaxation time, tau_alpha, scales quadratically with that of Debye time, tau_D, and the terminal flow time, tau_f, suggesting a relationship of tau_D*tau_D~tau_alpha. Further analyses reveal tau_D*tau_D/tau_alpha of 2E1H follows Arrhenius temperature dependence that applies remarkably well to many other monohydroxy alcohols with different molecular sizes, architectures, and alcohol types. These results cannot be understood by the prevailing transient chain model and suggest a H-bonding breakage facilitated sub-supramolecular reorientation as the origin of Debye relaxation of monohydroxy alcohols, akin to the molecular mechanism for the terminal relaxation of unentangled living polymers
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Submitted 12 October, 2022;
originally announced October 2022.
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Continuous transition from a Landau quasiparticle to a neutral spinon
Authors:
**g-Yu Zhao,
Shuai A. Chen,
Rong-Yang Sun,
Zheng-Yu Weng
Abstract:
We examine a wavefunction ansatz in which a doped hole can experience a quantum transition from a charge $+e$ Landau quasiparticle to a neutral spinon as a function of the underlying spin-spin correlation. As shown variationally, such a wavefunction accurately captures all the essential features revealed by exact diagonalization and density matrix renormalization group simulations in a two-leg…
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We examine a wavefunction ansatz in which a doped hole can experience a quantum transition from a charge $+e$ Landau quasiparticle to a neutral spinon as a function of the underlying spin-spin correlation. As shown variationally, such a wavefunction accurately captures all the essential features revealed by exact diagonalization and density matrix renormalization group simulations in a two-leg $t$-$J$ ladder. Hence its analytic form can provide an explicit understanding of the mechanism for the unconventional ground state. The transition in the phase diagram is accompanied by a change of the hole composite from a tight charge-spin binding to a loosely-bound hole-spin pair. In the latter, the hole carries a \emph{finite} spin current but with vanishing charge current in the degenerate ground states. We show that the charge of the hole composite here is dynamically diminished due to an internal relative hole-spin motion, which is fundamentally distinct from a simple charge-spin separation in a one-dimensional case. We further show that the same effect is also responsible for a strong pairing between two doped holes in such a non-Landau quasiparticle regime.
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Submitted 8 February, 2023; v1 submitted 10 October, 2022;
originally announced October 2022.
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The Dynamics of a Highly Curved Membrane Revealed by All-atom Molecular Dynamics Simulation of a Full-scale Vesicle
Authors:
Christopher Kang,
Kazuumi Fujioka,
Rui Sun
Abstract:
In spite of the great success that all-atom molecular dynamics simulations have seen in revealing the nature of the lipid bilayer, the interplay between a membrane's curvature and dynamics remains elusive. This is largely due to the computational challenges involved in simulating a highly curved membrane, as the one found in a small vesicle. In the present work, thanks to the computing power of An…
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In spite of the great success that all-atom molecular dynamics simulations have seen in revealing the nature of the lipid bilayer, the interplay between a membrane's curvature and dynamics remains elusive. This is largely due to the computational challenges involved in simulating a highly curved membrane, as the one found in a small vesicle. In the present work, thanks to the computing power of Anton2, we present the first all-atom molecular dynamics simulation of a full-scale, realistically composed (both heterogeneous and asymmetric) vesicle of a meaningful time scale (over 10 microseconds), which reveals unique biophysical properties of various lipid molecules (diffusion coefficients, surface areas per lipid, order parameters) and packing defects in a highly curved environment. Most interestingly, a bilayer of the same lipid composition demonstrating no phase coexistence when flat shows very strong indictors of phase coexistence when highly curved. Lipid molecules found in the curvature-induced different phases are carefully verified by their distinct composition, area per lipid, parking defects, as well as diffusion coefficient. The result of the all-atom molecular dynamics simulations is consistent with previous experimental and theoretical models and enhance the understanding of nanoscale dynamics and membrane organization of small, highly curved organelles.
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Submitted 24 July, 2022;
originally announced July 2022.
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Possible chiral spin liquid state in the $S=1/2$ kagome Heisenberg model
Authors:
Rong-Yang Sun,
Hui-Ke **,
Hong-Hao Tu,
Yi Zhou
Abstract:
The nature of the ground state for the $S = 1/2$ kagome Heisenberg antiferromagnet (KHAF) has been elusive. We revisit this challenging problem and provide numerical evidence that its ground state might be a chiral spin liquid. Combining the density matrix renormalization group method and analytical analyses, we demonstrate that the previously observed chiral spin liquid phase in the KHAF with lon…
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The nature of the ground state for the $S = 1/2$ kagome Heisenberg antiferromagnet (KHAF) has been elusive. We revisit this challenging problem and provide numerical evidence that its ground state might be a chiral spin liquid. Combining the density matrix renormalization group method and analytical analyses, we demonstrate that the previously observed chiral spin liquid phase in the KHAF with longer-range couplings is stable in a broader region. We characterize the nature of the ground state by computing energy derivatives, revealing ground-state degeneracy arising from spontaneous breaking of time-reversal symmetry, and targeting the semion sector. We further investigate the phase diagram in the vicinity of the KHAF and observe a $\sqrt{3}\times\sqrt{3}$ magnetically ordered phase and two valence-bond crystal phases.
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Submitted 11 December, 2023; v1 submitted 14 March, 2022;
originally announced March 2022.
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Matrix product states for Hartree-Fock-Bogoliubov wave functions
Authors:
Hui-Ke **,
Rong-Yang Sun,
Yi Zhou,
Hong-Hao Tu
Abstract:
We provide an efficient and accurate method for converting Hartree-Fock-Bogoliubov wave functions into matrix product states (MPSs). These wave functions, also known as Bogoliubov vacua, exhibit a peculiar entanglement structure that the eigenvectors of the reduced density matrix are also Bogoliubov vacua. We exploit this important feature to obtain their optimal MPS approximation and derive an ex…
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We provide an efficient and accurate method for converting Hartree-Fock-Bogoliubov wave functions into matrix product states (MPSs). These wave functions, also known as Bogoliubov vacua, exhibit a peculiar entanglement structure that the eigenvectors of the reduced density matrix are also Bogoliubov vacua. We exploit this important feature to obtain their optimal MPS approximation and derive an explicit formula for corresponding MPS matrices. The performance of our method is benchmarked with the Kitaev chain and the Majorana-Hubbard model on the honeycomb lattice. The approach facilitates the applications of Hartree-Fock-Bogoliubov wave functions and is ideally suited for combining with the density-matrix renormalization group method.
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Submitted 1 February, 2022; v1 submitted 17 November, 2021;
originally announced November 2021.
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A Tunnel Diode Oscillator for High Sensitivity Broad Temperature Range Susceptibility Measurements
Authors:
A. Sirusi,
J. Adams,
M. Lewkowitz,
R. Sun,
N. S. Sullivan
Abstract:
We report the design and operation of a versatile tunnel diode oscillator for high sensitivity (50 ppb) measurements of the magnetic susceptibility of samples over a wide temperature range (1.7-100 K) that can be used with a simple liquid helium storage dewar. The design allows for the application of an electric field across the sample to search for magnetoelectric effects.
We report the design and operation of a versatile tunnel diode oscillator for high sensitivity (50 ppb) measurements of the magnetic susceptibility of samples over a wide temperature range (1.7-100 K) that can be used with a simple liquid helium storage dewar. The design allows for the application of an electric field across the sample to search for magnetoelectric effects.
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Submitted 22 September, 2021;
originally announced September 2021.
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Prediction of high-Tc superconductivity in ternary lanthanum borohydrides
Authors:
Xiaowei Liang,
Aitor Bergara,
Xudong Wei,
Linyan Wang,
Rongxin Sun,
Hanyu Liu,
Russell J. Hemley,
Lin Wang,
Guoying Gao,
Yongjun Tian
Abstract:
The study of superconductivity in compressed hydrides is of great interest due to measurements of high critical temperatures (Tc) in the vicinity of room temperature, beginning with the observations of LaH10 at 170-190 GPa. However, the pressures required for synthesis of these high Tc superconducting hydrides currently remain extremely high. Here we show the investigation of crystal structures an…
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The study of superconductivity in compressed hydrides is of great interest due to measurements of high critical temperatures (Tc) in the vicinity of room temperature, beginning with the observations of LaH10 at 170-190 GPa. However, the pressures required for synthesis of these high Tc superconducting hydrides currently remain extremely high. Here we show the investigation of crystal structures and superconductivity in the La-B-H system under pressure with particle-swarm intelligence structure searches methods in combination with first-principles calculations. Structures with six stoichiometries, LaBH, LaBH3, LaBH4, LaBH6, LaBH7 and LaBH8, were predicted to become stable under pressure. Remarkably, the hydrogen atoms in LaBH8 were found to bond with B atoms in a manner that is similar to that in H3S. Lattice dynamics calculations indicate that LaBH7 and LaBH8 become dynamically stable at pressures as low as 109.2 and 48.3 GPa, respectively. Moreover, the two phases were predicted to be superconducting with a critical temperature (Tc) of 93 K and 156 K at 110 GPa and 55 GPa, respectively. Our results provide guidance for future experiments targeting new hydride superconductors with both low synthesis pressures and high Tc.
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Submitted 6 July, 2021;
originally announced July 2021.
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Unveiling a critical stripy state in the triangular-lattice SU(4) spin-orbital model
Authors:
Hui-Ke **,
Rong-Yang Sun,
Hong-Hao Tu,
Yi Zhou
Abstract:
The simplest spin-orbital model can host a nematic spin-orbital liquid state on the triangular lattice. We provide clear evidence that the ground state of the SU(4) Kugel-Khomskii model on the triangular lattice can be well described by a "single" Gutzwiller projected wave function with an emergent parton Fermi surface, despite it exhibits strong finite-size effect in quasi-one-dimensional cylinde…
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The simplest spin-orbital model can host a nematic spin-orbital liquid state on the triangular lattice. We provide clear evidence that the ground state of the SU(4) Kugel-Khomskii model on the triangular lattice can be well described by a "single" Gutzwiller projected wave function with an emergent parton Fermi surface, despite it exhibits strong finite-size effect in quasi-one-dimensional cylinders. The finite-size effect can be resolved by the fact that the parton Fermi surface consists of open orbits in the reciprocal space. Thereby, a stripy liquid state is expected in the two-dimensional limit, which preserves the SU(4) symmetry while breaks the translational symmetry by doubling the unit cell along one of the lattice vector directions. It is indicative that these stripes are critical and the central charge is $c=3$, in agreement with the SU(4)$_1$ Wess-Zumino-Witten conformal field theory. All these results are consistent with the Lieb-Schultz-Mattis-Oshikawa-Hastings theorem.
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Submitted 2 March, 2022; v1 submitted 17 June, 2021;
originally announced June 2021.
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Metal-insulator transition and intermediate phases in the kagome lattice Hubbard model
Authors:
Rong-Yang Sun,
Zheng Zhu
Abstract:
Motivated by the recent discovery of metallic kagome lattice materials, AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs), we investigate the ground state of the half-filled kagome lattice Hubbard model by employing the density-matrix renormalization group (DMRG) method. We identify a metal-insulator transition around $U \thicksim U_{c1}$ and four distinct phases as a function of $U/t$ on narrower cylinders, includi…
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Motivated by the recent discovery of metallic kagome lattice materials, AV$_{3}$Sb$_{5}$ (A=K, Rb, Cs), we investigate the ground state of the half-filled kagome lattice Hubbard model by employing the density-matrix renormalization group (DMRG) method. We identify a metal-insulator transition around $U \thicksim U_{c1}$ and four distinct phases as a function of $U/t$ on narrower cylinders, including a metallic phase at $U < U_{c1}$, two insulating intermediate phases: a translational symmetry breaking phase at $U_{c1} < U < U_{c2}$ and a quantum spin liquid phase at $U_{c2} < U < U_{c3}$, and the kagome antiferromagnetic phase at $U>U_{c3}$. We confirm that the translational symmetry breaking phase is robust for wider cylinders, while the quantum spin liquid phase is smoothly connected to the kagome antiferromagnetic phase with increasing the system width. Moreover, our numerical observations indicate a continuous metal-insulator transition at $U_{c1}$, whose nature is consistent with Slater's transition scenario. The magnetic phase transition between two insulating intermediate phases at $U_{c2}$ is first order. Our findings may provide insights into exotic kagome lattice materials.
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Submitted 20 October, 2021; v1 submitted 2 May, 2021;
originally announced May 2021.
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In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Authors:
Saurav Roy,
Adrian E. Chmielewski,
Arkka Bhattacharyya,
Praneeth Ranga,
Rujun Sun,
Michael A. Scarpulla,
Nasim Alem,
Sriram Krishnamoorthy
Abstract:
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum a…
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High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $β$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $β$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices.
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Submitted 28 March, 2021;
originally announced March 2021.
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Anisotropic magnon-magnon coupling in synthetic antiferromagnets
Authors:
Wei He,
Z. K. Xie,
Rui Sun,
Meng Yang,
Yang Li,
Xiao-Tian Zhao,
Wei Liu,
Z. D. Zhang,
Jian-Wang Cai,
Zhao-Hua Cheng,
Jie Lu
Abstract:
The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introdu…
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The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(tIr=0.6 nm, 1.2 nm)/CoFeB(13 nm). Remarkably, we find that the weakly uniaxial anisotropy field (~ 20 Oe) makes the magnon-magnon coupling anisotropic. The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for tIr =0.6 nm, and between nearly zero to 1.4 GHz for tIr = 1.2 nm, respectively. Our results demonstrate a feasible way to induce the magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field. The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena.
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Submitted 11 May, 2021; v1 submitted 7 March, 2021;
originally announced March 2021.
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Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Authors:
Rujun Sun,
Yu Kee Ooi,
Arkka Bhattacharyya,
Muad Saleh,
Sriram Krishnamoorthy,
Kelvin G. Lynn,
Michael A. Scarpulla
Abstract:
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously re…
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Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr do** of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high do** in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible do**.
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Submitted 6 November, 2020;
originally announced November 2020.
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Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence
Authors:
Rujun Sun,
Yu Kee Ooi,
Praneeth Ranga,
Arkka Bhattacharyya,
Sriram Krishnamoorthy,
Michael A. Scarpulla
Abstract:
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating t…
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In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O2 annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find an overall activation energy for the generation of non-radiative defects of 0.69 eV in the bulk but 1.55 eV near the surface. We also deduce activation energies for the green emission-related defects of 0.60 eV near the surface and 0.89-0.92 eV through the films, whereas the blue-related defects have activation energy in the range 0.43-0.62 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 oC. These observations are consistent with the formation and diffusion of VGa and its complexes as a dominant process during O2 annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations.
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Submitted 30 September, 2020;
originally announced September 2020.
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Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
Authors:
Praneeth Ranga,
Arkka Bhattacharyya,
Adrian Chmielewski,
Saurav Roy,
Rujun Sun,
Michael A. Scarpulla,
Nasim Alem,
Sriram Krishnamoorthy
Abstract:
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet cha…
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We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.
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Submitted 30 November, 2020; v1 submitted 23 September, 2020;
originally announced September 2020.
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On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
Authors:
Rujun Sun,
Yu Kee Ooi,
Peter T. Dickens,
Kelvin G. Lynn,
Michael A. Scarpulla
Abstract:
Currently, Fe do** in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commerc…
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Currently, Fe do** in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples including Fe-doped -Ga2O3, and attributed to Fe or N at O. Herein, however, we demonstrate that the high-intensity red luminescence from Fe-doped beta-Ga2O3 commercial substrates consisting of two sharp peaks at 689 nm and 697 nm superimposed on a broader peak centered at 710 nm originates from Cr impurities present at a concentration near 2 ppm. The red emission exhibits two-fold symmetry, peaks in intensity for excitation near absorption edge, seems to compete with Ga2O3 emission at higher excitation energy and appears to be intensified in the presence of Fe. Based on polarized absorption, luminescence observations and Tanabe-Sugano diagram analysis, we propose a resonant energy transfer of photogenerated carriers in beta-Ga2O3 matrix to octahedrally-coordinated Cr3+ to give red luminescence, possibly also sensitized by Fe3+.
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Submitted 21 July, 2020;
originally announced July 2020.
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Large spin to charge conversion in topological superconductor \b{eta}-PdBi2 at room temperature
Authors:
Yang Li,
Shi-jia Yang,
Dali Sun,
Yun-bin Sun,
Yan Li,
Eric Vetter,
Rui Sun,
Na Li,
Xu Yang,
Lei Su,
Zi-zhao Gong,
Zong-kai Xie,
Jian-jun Zhao,
Wei He,
Xiang-qun Zhang,
Zhao-hua Cheng
Abstract:
\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on investigating its topological surface states, the coupling between spin and charge degrees of freedom in this class of quantum material remains unexplored. Her…
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\b{eta}-PdBi2 has attracted much attention for its prospective ability to possess simultaneously topological surface and superconducting states due to its unprecedented spin-orbit interaction (SOC). Whereas most works have focused solely on investigating its topological surface states, the coupling between spin and charge degrees of freedom in this class of quantum material remains unexplored. Here we first report a study of spin-to-charge conversion in a \b{eta}-PdBi2 ultrathin film grown by molecular beam epitaxy, utilizing a spin pum** technique to perform inverse spin Hall effect measurements. We find that the room temperature spin Hall angle of Fe/\b{eta}-PdBi2, θ_SH=0.037. This value is one order of magnitude larger than that of reported conventional superconductors, and is comparable to that of the best SOC metals and topological insulators. Our results provide an avenue for develo** superconductor-based spintronic applications.
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Submitted 16 July, 2020;
originally announced July 2020.
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Universal Scaling Behaviors of Entangled Polymer Melts at High-stress Shear
Authors:
Zipeng Xu,
Ruikun Sun,
Wei Lu,
Jimmy Mays,
Shiwang Cheng
Abstract:
In addition to the terminal flow (the region I) and the shear thinning (the region II), we discover two new flow regions in capillary flow at the wall stress higher than the plateau modulus of the polymer. The region III violates the empirical Cox-Merz rule with a significantly weaker shear thinning than the region II, and the region IV exhibits unexpected shear thickening. Moreover, the crossover…
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In addition to the terminal flow (the region I) and the shear thinning (the region II), we discover two new flow regions in capillary flow at the wall stress higher than the plateau modulus of the polymer. The region III violates the empirical Cox-Merz rule with a significantly weaker shear thinning than the region II, and the region IV exhibits unexpected shear thickening. Moreover, the crossover shear rates between the regions II and III and between the regions III and IV scale with the number of entanglement per chain, Z=M_w/M_e, as Z^(-2.0) and Z^(-1.2) respectively. We attribute the weakening in shear thinning and the emergence of shear thickening to the deformation-induced non-Gaussian stretching of polymers. These observations offer the first experimental quantification of the deformation behaviors of polymer melts at high-stress shear.
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Submitted 13 November, 2022; v1 submitted 3 May, 2020;
originally announced May 2020.
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Complex Phase Diagram of Doped XXZ Ladder: Localization and Pairing
Authors:
Rong-Yang Sun,
Zheng Zhu,
Zheng-Yu Weng
Abstract:
How the ground state nature can be dramatically changed by the distinct underlying spin correlation is a central issue of doped Mott insulators. The two-leg XXZ ladder provides a prototypical spin background, which can be tuned from a long-range Néel order to a short-range ``spin liquid'' via the superexchange anisotropy, giving rise to a complex phase diagram at finite do**. By density matrix r…
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How the ground state nature can be dramatically changed by the distinct underlying spin correlation is a central issue of doped Mott insulators. The two-leg XXZ ladder provides a prototypical spin background, which can be tuned from a long-range Néel order to a short-range ``spin liquid'' via the superexchange anisotropy, giving rise to a complex phase diagram at finite do**. By density matrix renormalization group method, we show that although the charge is always self-localized in the Néel ordered phase, a second insulating phase emerges, in which the doped holes become paired but remain localized while the transverse spin-spin correlation reduces to short-ranged one to make the Néel order classical. Only when the Néel order totally disappears by further reducing anisotropy, does the pairing become truly coherent as characterized by a Luther-Emery state. In sharp contrast, the pairing is totally absent in the in-plane ferromagnetic XXZ regime, where a direct transition from the charge self-localization in the Néel ordered phase to a Fermi-gas-like state in the spin liquid phase is found. A consistent physical picture is briefly discussed.
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Submitted 13 July, 2020; v1 submitted 9 February, 2020;
originally announced February 2020.
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Crystal structures and the sign reversal Hall resistivity in iron-based superconductors Lix(C3H10N2)0.32FeSe (0.15<x<0.4)
Authors:
Rui** Sun,
Shifeng **,
Jun Den,
Munan Hao,
Linlin Zhao,
Xiao Fan,
Xiaoning Sun,
Jiangang Guo,
Lin Gu,
Xiaolong Chen
Abstract:
We report the crystal structure, superconductivity and normal state properties of two iron-based materials, Li0.15(C3H10N2)0.32FeSe(P-4) and Lix(C3H10N2)0.32FeSe(P4/nmm, 0.25<x<0.4) with superconducting transition temperature from 40~46K. The determined crystal structures revealed a coupling between Li concentration and the oritation of 1,2-Diaminopropane molecules within the hyper expanded FeSe l…
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We report the crystal structure, superconductivity and normal state properties of two iron-based materials, Li0.15(C3H10N2)0.32FeSe(P-4) and Lix(C3H10N2)0.32FeSe(P4/nmm, 0.25<x<0.4) with superconducting transition temperature from 40~46K. The determined crystal structures revealed a coupling between Li concentration and the oritation of 1,2-Diaminopropane molecules within the hyper expanded FeSe layers. Further fitting on resistivity in terms of the Lawence-Doniach model suggests the two superconductors belong to the quasi-two dimonsional system. With increasing temperature, a differences in crystal structures and do** levels. First principle calculations revealed the increase in FeSe layer diatance will restruct the Fermi surface and generate a new hole pocket around Gamma point in the Brillouin Zone. Our findings support that the increase in two dimensionalities will leads to a temperature induced Lifshitz transition in electron doped FeSe superconductors.
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Submitted 8 January, 2019;
originally announced January 2019.
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Localization in a $t$-$J$ type ladder with translational symmetry
Authors:
Rong-Yang Sun,
Zheng Zhu,
Zheng-Yu Weng
Abstract:
An explicit $\textit{spatial}$ localization of a hole is shown in a two-leg $t$-$J$ ladder in the presence of a staggered chemical potential, which still retains a translational symmetry, by density matrix renormalization group method. Delocalization can be recovered in the following cases, where either the hidden phase string effect is turned off or a finite next-nearest-neighbor hop** $t'$ is…
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An explicit $\textit{spatial}$ localization of a hole is shown in a two-leg $t$-$J$ ladder in the presence of a staggered chemical potential, which still retains a translational symmetry, by density matrix renormalization group method. Delocalization can be recovered in the following cases, where either the hidden phase string effect is turned off or a finite next-nearest-neighbor hop** $t'$ is added to sufficiently weaken the phase string effect. In addition, two holes are always delocalized by forming a mobile bound pair, in contrast to the localized single holes, which points to a novel pairing mechanism as one of the essential properties of a doped Mott insulator.
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Submitted 14 November, 2018;
originally announced November 2018.
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Realization of continuously electron do** in bulk iron selenides and identification of a new superconducting zone
Authors:
R. J. Sun,
Y. Quan,
S. F. **,
Q. Z. Huang,
H. Wu,
L. Zhao,
L. Gu,
Z. P. Yin,
X. L. Chen
Abstract:
It is known that iron selenide superconductors exhibit unique characteristics distinct from iron pnicitides, especially in the electron-doped region. However, acomprehensive study of continuous carrier do** ang the corresponding crystal structures of FeSe is still lacking, mainly due to the difficulties in controlling the carrier density in bulk materials. Here, we report the successful synthesi…
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It is known that iron selenide superconductors exhibit unique characteristics distinct from iron pnicitides, especially in the electron-doped region. However, acomprehensive study of continuous carrier do** ang the corresponding crystal structures of FeSe is still lacking, mainly due to the difficulties in controlling the carrier density in bulk materials. Here, we report the successful synthesis of a new family of bulk Lix(C3H10N2)0.37FeSe, which features a continue superconducting dome harboring Lifshitz transition within the wide range of 0.06~0.68. We demonstrate that with electron-doped, the anion height of FeSe layers deviates lineraly away from the optimized values of pnictides and pressurized FeSe. This feature leads to anew superconducting zone with unique do** dependence of the electronic structures and strong orbital-selective electronic correlation. Optimal superconductivity is achieved when the Fe 3d t2g orbitals have almost the same intermediate electronic correlation strength, with moderate mass enhancement between 3~4 in the two separate superconducting zone. Our result shed light on archieving unified mechanism of superconductivity in iron-based materials.
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Submitted 25 August, 2018;
originally announced August 2018.
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Investigating the Settling Dynamics of Cohesive Silt Particles With Particle-Resolving Simulations
Authors:
Rui Sun,
Heng Xiao,
Honglei Sun
Abstract:
The settling of cohesive sediment is ubiquitous in aquatic environments. In the settling process, the silt particles show behaviors that are different from non-cohesive particles due to the influence of inter-particle cohesive force. While it is a consensus that cohesive behaviors depend on the characteristics of sediment particles (e.g., Bond number, particle size distribution), little is known a…
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The settling of cohesive sediment is ubiquitous in aquatic environments. In the settling process, the silt particles show behaviors that are different from non-cohesive particles due to the influence of inter-particle cohesive force. While it is a consensus that cohesive behaviors depend on the characteristics of sediment particles (e.g., Bond number, particle size distribution), little is known about the exact influence of these characteristics on the cohesive behaviors. In the present work, three-dimensional settling process is investigated numerically by using CFD--DEM (Computational Fluid Dynamics--Discrete Element Method). The inter-particle collision force, the van der Waals force, and the fluid--particle interaction forces are considered. The numerical model is used to simulate the hindered settling process of silt based on the experimental setup in the literature. The results obtained in the simulations, including the structural densities of the beds, the characteristic lines, and the particle terminal velocity, are in good agreement with the experimental observations in the literature. To the authors' knowledge, this is the first time that the influences of non-dimensional Bond number and particle polydispersity on the structural densities of silt beds have been investigated separately. The results demonstrate that the cohesive behavior of silt in the settling process is attributed to both the cohesion among silt particles themselves and the particle polydispersity. To guide to the macro-scale modeling of cohesive silt sedimentation, the collision frequency functions obtained in the numerical simulations are also presented based on the micromechanics of particles. The results obtained by using CFD--DEM indicate that the binary collision theory over-estimated the particle collision frequency in the flocculation process at high solid volume fraction.
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Submitted 20 June, 2017; v1 submitted 14 March, 2017;
originally announced March 2017.
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An epicycle method for elasticity limit calculations
Authors:
Axel van de Walle,
Sara Kadkhodaei,
Ruoshi Sun,
Qi-Jun Hong
Abstract:
The task of finding the smallest energy needed to bring a solid to its onset of mechanical instability arises in many problems in materials science, from the determination of the elasticity limit to the consistent assignment of free energies to mechanically unstable phases. However, unless the space of possible deformations is low-dimensional and a priori known, this problem is numerically difficu…
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The task of finding the smallest energy needed to bring a solid to its onset of mechanical instability arises in many problems in materials science, from the determination of the elasticity limit to the consistent assignment of free energies to mechanically unstable phases. However, unless the space of possible deformations is low-dimensional and a priori known, this problem is numerically difficult, as it involves minimizing a function under a constraint on its Hessian, which is computionally prohibitive to obtain in low symmetry systems, especially if electronic structure calculations are used. We propose a method that is inspired by the well-known dimer method for saddle point searches but that adds the necessary ingredients to solve for the lowest onset of mechanical instability. The method consists of two nested optimization problems. The inner one involves a dimer-like construction to find the direction of smallest curvature as well as the gradient of this curvature function. The outer optimization then minimizes energy using the result of the inner optimization problem to constrain the search to the hypersurface enclosing all points of zero minimum curvature. Example applications to both model systems and electronic structure calculations are given.
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Submitted 12 January, 2017;
originally announced January 2017.
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Observation of Inverse Edelstein Effect in Rashba-Split 2DEG between SrTiO3 and LaAlO3 at Room Temperature
Authors:
Qi Song,
Hongrui Zhang,
Tang Su,
Wei Yuan,
Yangyang Chen,
Wenyu Xing,
**g Shi,
Ji Rong Sun,
Wei Han
Abstract:
The Rashba physics has been intensively studied in the field of spin orbitronics, for the purpose of searching novel physical properties and the FM magnetization switching for technology applications. Here, we report the observation of the inverse Edelstein effect up to room temperature in the Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the LaAlO3 layer thickness from 3…
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The Rashba physics has been intensively studied in the field of spin orbitronics, for the purpose of searching novel physical properties and the FM magnetization switching for technology applications. Here, we report the observation of the inverse Edelstein effect up to room temperature in the Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the LaAlO3 layer thickness from 3 to 40 unit cells (UC). We further demonstrate that the spin voltage could be dramatically manipulated by electric field effect for the 2DEG between SrTiO3 and 3 UC LaAlO3. These results demonstrate that the Rashba-split 2DEG at the complex oxide interface can be used for room temperature efficient charge-and-spin conversion for the generation and detection of spin current.
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Submitted 21 January, 2017; v1 submitted 20 September, 2016;
originally announced September 2016.
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Two new parent compounds for FeSe-based superconducting phases
Authors:
Shifeng **,
Xiaozhi Wu,
Qingzhen Huang,
Hui Wu,
Tian** Ying,
Xiao Fan,
Rui** Sun,
Linlin Zhao,
Xiaolong Chen
Abstract:
It is well established that the occurrence of superconductivity in iron pnictides is closely related to the tetragonal to orthorhombic structural and antiferromagnetic (AFM) phase transitions. It, however, has not been clear whether the same scenario is appropriate for iron chalcogenide counterparts due to the absence of parent compounds for the latter family of superconductors. Here, we report th…
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It is well established that the occurrence of superconductivity in iron pnictides is closely related to the tetragonal to orthorhombic structural and antiferromagnetic (AFM) phase transitions. It, however, has not been clear whether the same scenario is appropriate for iron chalcogenide counterparts due to the absence of parent compounds for the latter family of superconductors. Here, we report the synthesis and structure determination of two novel phases in ethylenediamine intercalated FeSe, one is tetragonal and the other orthorhombic in room temperature, which can be stabilized with neutral spacer layers. Both phases can be regarded as the parent compounds for superconductivity as they are non-superconducting (non-SC) in pristine form and superconducting (SC) with Tc up to 38K and 46K, respectively after Na do**, and the switch between SC and no-SC is reversible. Moreover, the two non-SC parent compounds show no evidence of long-range magnetic ordering down to 2K, only with dynamic spin fluctuations at low temperatures, suggesting that no competition between SC and AFM ordering. Our results reveal that undoped iron selenides are quantum paramagnetic in ground state, implying that they are distinct from their pnictide counterparts in pairing mechanism.
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Submitted 4 July, 2016;
originally announced July 2016.
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Nucleation and strain-stabilization during organic semiconductor thin film deposition
Authors:
Yang Li,
**g Wan,
Detlef-M. Smilgies,
Nicole Bouffard,
Richard Sun,
Randall L. Headrick
Abstract:
The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a su…
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The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135$^\circ$C.
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Submitted 30 July, 2016; v1 submitted 31 October, 2015;
originally announced November 2015.
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Study of helium irradiation induced hardening in MNHS steel
Authors:
J. Wang,
Z. G. Wang,
E. Q. Xie,
N. Gao,
M. H. Cui,
T. L. Shen,
K. F. Wei,
C. F. Yao,
J. R. Sun,
Y. B. Zhu,
L. L. Pang,
D. Wang,
H. P. Zhu,
Y. Y. Du
Abstract:
A recently developed reduced activation ferritic/martensitic steel MNHS was irradiated with 200keV He ions to a fluence of 1E21ions/m^2 at 450 celsius degree and 1E20ions/m^2 at 300 celsius degree and 450 celsius degree, respectively. The irradiation hardening of the steel was investigated by nanoindentation measurements combined with transmission electron microscopy (TEM) analysis. Dispersed barr…
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A recently developed reduced activation ferritic/martensitic steel MNHS was irradiated with 200keV He ions to a fluence of 1E21ions/m^2 at 450 celsius degree and 1E20ions/m^2 at 300 celsius degree and 450 celsius degree, respectively. The irradiation hardening of the steel was investigated by nanoindentation measurements combined with transmission electron microscopy (TEM) analysis. Dispersed barrier-hardening (DBH) model was applied to predict the hardness increments based on TEM analysis. The predicted hardness increments are consistent with the values obtained by nanoindentation tests. It is found that dislocation loops and He bubbles are hard barriers against dislocation motion and they are the main contributions to He irradiation-induced hardening of MNHS steel. The obstacle strength of He bubbles is stronger than the obstacle strength of dislocation loops.
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Submitted 24 March, 2015;
originally announced March 2015.
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Visible light enhanced field effect at LaAlO3/SrTiO3 interface
Authors:
Y. Lei,
Y. Z. Chen,
Y. W. Xie,
Y. Li,
Y. S. Chen,
S. H. Wang,
J. Wang,
B. G. Shen,
N. Pryds,
H. Y. Hwang,
J. R. Sun
Abstract:
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a qu…
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Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.
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Submitted 23 May, 2014;
originally announced May 2014.
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Energy deposition by heavy ions: Additivity of kinetic and potential energy contributions in hillock formation on CaF2
Authors:
Y. Y. Wang,
C. Grygiel,
C. Dufour,
J. R. Sun,
Z. G. Wang,
Y. T. Zhao,
G. Q. Xiao,
R. Cheng,
X. M. Zhou,
J. R. Ren,
S. D. Liu,
Y. Lei,
Y. B. Sun,
R. Ritter,
E. Gruber,
A. Cassimi,
I. Monnet,
S. Bouffard,
F. Aumayr,
M. Toulemonde
Abstract:
The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electr…
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The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electronic energy loss is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via electronic energy loss the potential energy threshold for hillock production can be substantially lowered. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, as demonstrated when plotting the results in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to case where kinetic and potential energies are deposited into the surface.
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Submitted 17 February, 2014;
originally announced February 2014.
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High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities
Authors:
Y. Z. Chen,
N. Pryds,
J. R. Sun,
B. G. Shen,
S. Linderoth
Abstract:
The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been ma…
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The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.
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Submitted 9 September, 2013;
originally announced September 2013.
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Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems
Authors:
L. L. Wei,
D. S. Shang,
J. R. Sun,
S. B. Lee,
Z. G. Sun,
B. G. Shen
Abstract:
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron sp…
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We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron spectroscopy analysis, a model based on Cu ion and oxygen vacancy drift, and thickness change of the SiOx layer at the CuOx/Si interface was proposed for the memristive switching and gradual electroforming, respectively. The present work would be meaningful for the preparation of forming-free and homogeneous memristive devices.
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Submitted 15 April, 2013;
originally announced April 2013.
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A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
Authors:
Y. Z. Chen,
N. Bovet,
F. Trier,
D. V. Christensen,
F. M. Qu,
N. H. Andersen,
T. Kasama,
W. Zhang,
R. Giraud,
J. Dufouleur,
T. S. Jespersen,
J. R. Sun,
A. Smith,
J. Nygård,
L. Lu,
B. Büchner,
B. G. Shen,
S. Linderoth,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain…
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The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
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Submitted 1 April, 2013;
originally announced April 2013.
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Recent progress in exploring magnetocaloric materials
Authors:
B. G. Shen,
J. R. Sun,
F. X. Hu,
H. W. Zhang,
Z. H. Cheng
Abstract:
Magnetic refrigeration based on the magnetocaloric effect (MCE) of materials is a potential technique that has prominet advantages over the currently used gas compression-expansion technique in the sense of its high efficiency and environment friendship. In this article, our recent progress in explorating effective MCE materials is reviewed with the emphasis on the MCE in the LaFe13-xSix-based all…
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Magnetic refrigeration based on the magnetocaloric effect (MCE) of materials is a potential technique that has prominet advantages over the currently used gas compression-expansion technique in the sense of its high efficiency and environment friendship. In this article, our recent progress in explorating effective MCE materials is reviewed with the emphasis on the MCE in the LaFe13-xSix-based alloys with a first order magnetic transition discovered by us. These alloys show large entropy changes in a wide temperature range near room temperature. Effects of magnetic rare-earth do**, interstitial atom, and high pressure on the MCE have been systematically studied. Special issues such as appropriate approaches to determining the MCE associated with the first-order magnetic transition, the depression of magnetic and thermal hystereses, and the key factors determining the magnetic exchange in alloys of this kind are discussed. The applicability of the giant MCE materials to the magnetic refrigeration near ambient temperature is evaluated. A brief review of other materials with significant MCE is also presented in the article.
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Submitted 17 June, 2010;
originally announced June 2010.
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Cluster Monte Carlo study of multi-component fluids of the Stillinger-Helfand and Widom-Rowlinson type
Authors:
Rongfeng Sun,
Harvey Gould,
Jon Machta,
Lincoln Chayes
Abstract:
Phase transitions of fluid mixtures of the type introduced by Stillinger and Helfand are studied using a continuum version of the invaded cluster algorithm. Particles of the same species do not interact, but particles of different types interact with each other via a repulsive potential. Examples of interactions include the Gaussian molecule potential and a repulsive step potential. Accurate val…
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Phase transitions of fluid mixtures of the type introduced by Stillinger and Helfand are studied using a continuum version of the invaded cluster algorithm. Particles of the same species do not interact, but particles of different types interact with each other via a repulsive potential. Examples of interactions include the Gaussian molecule potential and a repulsive step potential. Accurate values of the critical density, fugacity and magnetic exponent are found in two and three dimensions for the two-species model. The effect of varying the number of species and of introducing quenched impurities is also investigated. In all the cases studied, mixtures of $q$-species are found to have properties similar to $q$-state Potts models.
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Submitted 31 March, 2000;
originally announced March 2000.