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Hybrid magnon-phonon cavity for large-amplitude terahertz spin-wave excitation
Authors:
Shihao Zhuang,
Xufeng Zhang,
Yujie Zhu,
Nian X. Sun,
Chang-Beom Eom,
Paul G. Evans,
Jia-Mian Hu
Abstract:
Terahertz (THz) spin waves or their quanta, magnons, can be efficiently excited by acoustic phonons because these excitations have similar wavevectors in the THz regime. THz acoustic phonons can be produced using photoacoustic phenomena but typically have a low population and thus a relatively low displacement amplitude. The magnetization amplitude and population of the acoustically excited THz ma…
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Terahertz (THz) spin waves or their quanta, magnons, can be efficiently excited by acoustic phonons because these excitations have similar wavevectors in the THz regime. THz acoustic phonons can be produced using photoacoustic phenomena but typically have a low population and thus a relatively low displacement amplitude. The magnetization amplitude and population of the acoustically excited THz magnons are thus usually small. Using analytical calculations and dynamical phase-field simulations, we show that a freestanding metal/magnetic-insulator (MI)/dielectric multilayer can be designed to produce large-amplitude THz spin wave via cavity-enhanced magnon-phonon interaction. The amplitude of the acoustically excited THz spin wave in the freestanding multilayer is predicted to be more than ten times larger than in a substrate-supported multilayer. Acoustically excited nonlinear magnon-magnon interaction is demonstrated in the freestanding multilayer. The simulations also indicate that the magnon modes can be detected by probing the charge current in the metal layer generated via spin-charge conversion across the MI/metal interface and the resulting THz radiation. Applications of the freestanding multilayer in THz optoelectronic transduction are computationally demonstrated.
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Submitted 12 March, 2024;
originally announced March 2024.
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Flux ratios for effects of permanent charges on ionic flows with three ion species: Case study (II)
Authors:
Ning Sun,
Weishi Liu
Abstract:
In this paper, we study effects of permanent charges on ion flows through membrane channels via a quasi-one-dimensional classical Poisson-Nernst-Planck system. This system includes three ion species, two cations with different valences and one anion, and permanent charges with a simple structure, zeros at the two end regions and a constant over the middle region. For small permanent charges, our m…
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In this paper, we study effects of permanent charges on ion flows through membrane channels via a quasi-one-dimensional classical Poisson-Nernst-Planck system. This system includes three ion species, two cations with different valences and one anion, and permanent charges with a simple structure, zeros at the two end regions and a constant over the middle region. For small permanent charges, our main goal is to analyze the effects of permanent charges on ionic flows, interacting with the boundary conditions and channel structure. Continuing from a previous work, we investigate the problem for a new case toward a more comprehensive understanding about effects of permanent charges on ionic fluxes.
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Submitted 20 November, 2023;
originally announced December 2023.
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Interface Engineering Enabled Low Temperature Growth of Magnetic Insulator on Topological Insulator
Authors:
Nirjhar Bhattacharjee,
Krishnamurthy Mahalingam,
Alexandria Will-Cole,
Yuyi Wei,
Adrian Fedorko,
Cynthia T. Bowers,
Michael Page,
Michael McConney,
Don Heiman,
Nian Xiang Sun
Abstract:
Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum, low-temperature growth process. TIs have highly reactive surfaces that oxidize upon exposure to atmosphere, making it challenging to grow spin-spray ferrites o…
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Combining topological insulators (TIs) and magnetic materials in heterostructures is crucial for advancing spin-based electronics. Magnetic insulators (MIs) can be deposited on TIs using the spin-spray process, which is a unique non-vacuum, low-temperature growth process. TIs have highly reactive surfaces that oxidize upon exposure to atmosphere, making it challenging to grow spin-spray ferrites on TIs. In this work, it is demonstrated that a thin titanium cap** layer on TI, followed by oxidation in atmosphere to produce a thin TiOx interfacial layer, protects the TI surface, without significantly compromising spin transport from the magnetic material across the TiOx to the TI surface states. First, it was demonstrated that in Bi2Te3/TiOx/Ni80Fe20 heterostructures that TiOx provided an excellent barrier against diffusion of magnetic species, yet maintained a large spin-pum** effect. Second, the TiOx was also used as a protective cap** layer on Bi2Te3, followed by the spin-spray growth of the MI, NixZnyFe2O4 (NZFO). For the thinnest TiOx barriers, Bi2Te3/TiOx/NZFO samples had AFM disordered interfacial layer because of diffusion. With increasing TiOx barrier thickness, the diffusion was reduced, but still maintained strong interfacial spin-pum** interaction. These experimental results demonstrate a novel method of low-temperature growth of magnetic insulators on TIs enabled by interface engineering.
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Submitted 31 July, 2022;
originally announced August 2022.
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Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures
Authors:
Nirjhar Bhattacharjee,
Krishnamurthy Mahalingam,
Adrian Fedorko,
Alexandria Will-Cole,
Jaehyeon Ryu,
Michael Page,
Michael McConney,
Hui Fang,
Don Heiman,
Nian Xiang Sun
Abstract:
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and re…
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Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert dam** is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced dam**-like spin-orbit torque (DL-SOT), possibly due to the topological surface states (TSS) of Bi2Te3. Furthermore, a spontaneous exchange bias is observed in hysteresis loop measurements at low temperatures. This is because of an antiferromagnetic topological interfacial layer formed by reaction of the diffused Ni with Bi2Te3 which couples with the FM, Ni80Fe20. For increasing disorder of Bi2Te3, a significant weakening of exchange interaction in the AFM interfacial layer is found. These experimental results Abstract length is one paragraph.
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Submitted 19 May, 2022;
originally announced May 2022.
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Sharp threshold sequence and universality for Ising perceptron models
Authors:
Shuta Nakajima,
Nike Sun
Abstract:
We study a family of Ising perceptron models with $\{0,1\}$-valued activation functions. This includes the classical half-space models, as well as some of the symmetric models considered in recent works. For each of these models we show that the free energy is self-averaging, there is a sharp threshold sequence, and the free energy is universal with respect to the disorder. A prior work of Xu (201…
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We study a family of Ising perceptron models with $\{0,1\}$-valued activation functions. This includes the classical half-space models, as well as some of the symmetric models considered in recent works. For each of these models we show that the free energy is self-averaging, there is a sharp threshold sequence, and the free energy is universal with respect to the disorder. A prior work of Xu (2019) used very different methods to show a sharp threshold sequence in the half-space Ising perceptron with Bernoulli disorder. Recent works of Perkins--Xu (2021) and Abbe--Li--Sly (2021) determined the sharp threshold and limiting free energy in a symmetric perceptron model. The results of this paper apply in more general settings, and are based on new "add one constraint" estimates extending Talagrand's estimates for the half-space model (1999, 2011).
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Submitted 7 April, 2022;
originally announced April 2022.
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Observation of novel topological states in hyperbolic lattices
Authors:
Weixuan Zhang,
Hao Yuan,
Na Sun,
Houjun Sun,
Xiangdong Zhang
Abstract:
The discovery of novel topological states has served as a major branch in physics and material science. However, to date, most of the established topological states of matter have been employed in Euclidean systems, where the interplay between unique geometrical characteristics of curved spaces and exotic topological phases is less explored, especially on the experimental perspective. Recently, th…
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The discovery of novel topological states has served as a major branch in physics and material science. However, to date, most of the established topological states of matter have been employed in Euclidean systems, where the interplay between unique geometrical characteristics of curved spaces and exotic topological phases is less explored, especially on the experimental perspective. Recently, the experimental realization of the hyperbolic lattice, which is the regular tessellation in non-Euclidean spaces with a constant negative curvature, has attracted much attention in the field of simulating exotic phenomena from quantum physics in curved spaces to the general relativity. The question is whether there are novel topological states in such a non-Euclidean system without analogues in Euclidean spaces. Here, we demonstrate both in theory and experiment that novel topological states possessing unique properties compared with their Euclidean counterparts can exist in engineered hyperbolic lattices. Specially, based on the extended Haldane model, the boundary-dominated first-order Chern edge state with a nontrivial real-space Chern number is achieved, and the associated one-way propagation is proven. Furthermore, we show that fractal-like midgap higher-order zero modes appear in deformed hyperbolic lattices, where the number of zero modes increases exponentially with the increase of lattice size. These novel topological states are observed in designed hyperbolic circuit networks by measuring site-resolved impendence responses and dynamics of voltage packets. Our findings suggest a novel platform to study topological phases beyond Euclidean space and may have potential applications in the field of designing high-efficient topological devices, such as topological lasers, with extremely fewer trivial regions.
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Submitted 7 March, 2022;
originally announced March 2022.
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Observation of anyonic Bloch oscillations
Authors:
Weixuan Zhang,
Hao Yuan,
Haiteng Wang,
Fengxiao Di,
Na Sun,
Xingen Zheng,
Houjun Sun,
Xiangdong Zhang
Abstract:
Bloch oscillations are exotic phenomena describing the periodic motion of a wave packet subjected to the external force in a lattice, where the system possessing single- or multipleparticles could exhibit distinct oscillation behaviors. In particular, it has been pointed out that quantum statistics could dramatically affected the Bloch oscillation even in the absence of particle interactions, wher…
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Bloch oscillations are exotic phenomena describing the periodic motion of a wave packet subjected to the external force in a lattice, where the system possessing single- or multipleparticles could exhibit distinct oscillation behaviors. In particular, it has been pointed out that quantum statistics could dramatically affected the Bloch oscillation even in the absence of particle interactions, where the oscillation frequency of two pseudofermions with the anyonic statistical angle being pi becomes half of that for two bosons. However, these statisticdependent Bloch oscillations have never been observed in experiments up to now. Here, we report the first experimental simulation of anyonic Bloch oscillations using electric circuits. By map** eigenstates of two anyons to modes of designed circuit simulators, the Bloch oscillation of two bosons and two pseudofermions are verified by measuring the voltage dynamics. It is found that the oscillation period in the two-boson simulator is almost twice of that in the two-pseudofermion simulator, which is consistent with the theoretical prediction. Our proposal provides a flexible platform to investigate and visualize many interesting phenomena related to particle statistics, and could have potential applications in the field of the novelty signal control.
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Submitted 12 October, 2021; v1 submitted 12 October, 2021;
originally announced October 2021.
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Antiferromagnetic VdW Phase at the Interface of Sputtered Topological Insulator/Ferromagnet-Bi2Te3/Ni80Fe20 Heterostructures
Authors:
Nirjhar Bhattacharjee,
Krishnamurthy Mahalingam,
Adrian Fedorko,
Valeria Lauter,
Matthew Matzelle,
Bahadur Singh,
Alexander Grutter,
Alexandria Will-Cole,
Michael Page,
Michael McConney,
Robert Markiewicz,
Arun Bansil,
Donald Heiman,
Nian Xiang Sun
Abstract:
Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be exp…
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Magnetic ordering in topological insulators (TI) is crucial for breaking time-reversal symmetry (TRS) and thereby opening a gap in the topological surface states (TSSs) [1-6], which is the key for realizing useful topological properties such as the quantum anomalous Hall (QAH) effect, axion insulator state and the topological magnetoelectric effect. Combining TIs with magnetic materials can be expected to yield interfaces [26-28] with unique topological and magnetic phases but such interfaces largely remain unexplored. Here, we report the discovery of a novel antiferromagnetic (AFM) Van der Waals (VdW) phase at the interface of a sputtered c-axis oriented TI/FM (Bi2Te3/Ni80Fe20) heterostructure due to the formation of a Ni-intercalated Bi2Te3 VdW interfacial layer. The TI/FM heterostructure is shown to possess a significant spontaneous exchange bias and the presence of an AFM order at the interface via measurements of the hysteresis loop as well as the observation of compensated magnetic moments at the interface using polarized neutron reflectometry (PNR). An in-depth analysis of the structural and chemical properties of the interfacial AFM phase was carried out using selected area electron diffraction (SAED), electron energy loss spectroscopy (EELS), and X-ray photoelectron spectroscopy (XPS). These studies show evidence of solid-state reaction between the intercalated Ni atoms and Bi2Te3 layers and of the formation of topologically nontrivial magnetic VdW compounds. The Néel temperature of the interfacial AFM phase is 63 K, which is higher than that of typical magnetic topological insulators [53]. Our study shows how industrial CMOS-process-compatible sputtered TI/FM heterostructures can provide a novel materials platform for exploring the emergence of interfacial topological magnetic phases and high-temperature topological magnetic states.
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Submitted 15 October, 2021; v1 submitted 6 October, 2021;
originally announced October 2021.
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Giant Nonreciprocity of Surface Acoustic Waves enabled by the Magnetoelastic Interaction
Authors:
Piyush J. Shah,
Derek A. Bas,
Ivan Lisenkov,
Alexei Matyushov,
Nianxiang Sun,
Michael R. Page
Abstract:
Nonreciprocity, the defining characteristic of isolators, circulators and a wealth of other applications in radio/microwave communications technologies, is in general difficult to achieve as most physical systems incorporate symmetries that prevent the effect. In particular, acoustic waves are an important medium for information transport, but they are inherently symmetric in time. In this work, w…
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Nonreciprocity, the defining characteristic of isolators, circulators and a wealth of other applications in radio/microwave communications technologies, is in general difficult to achieve as most physical systems incorporate symmetries that prevent the effect. In particular, acoustic waves are an important medium for information transport, but they are inherently symmetric in time. In this work, we report giant nonreciprocity in the transmission of surface acoustic waves (SAWs) on lithium niobate substrate coated with ferromagnet/insulator/ferromagnet (FeGaB/Al2O3/FeGaB) multilayer structure. We exploit this novel structure with a unique asymmetric band diagram, and expand on magnetoelastic coupling theory to show how the magnetic bands couple with acoustic waves only in a single direction. We measure 48.4 dB (ratio of 1:100,000) isolation which outperforms current state of the art microwave isolator devices in a novel acoustic wave system that facilitates unprecedented size, weight, and power reduction. Additionally, these results offer a promising platform to study nonreciprocal SAW devices.
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Submitted 29 April, 2020;
originally announced April 2020.
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Large Magnetoelectric Response in Sr2IrO4/SrTiO3 superlattices with non-equivalent interfaces
Authors:
Xin Liu,
Peipei Lu,
Mei Wu,
Yuanwei Sun,
**gdi Lu,
**g Wang,
Dayu Yan,
Youguo Shi,
Zhi** Yin,
Nian Xiang Sun,
Peng Gao,
Young Sun,
Fa Wang,
Ce-Wen Nan,
**xing Zhang
Abstract:
Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a con…
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Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.
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Submitted 3 October, 2019;
originally announced October 2019.
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Sub-terahertz ferrimagnetic spin-transfer torque oscillator
Authors:
Ivan Lisenkov,
Roman Khymyn,
Johan Akerman,
Nian X. Sun,
Boris A. Ivanov
Abstract:
A theory of magnetization dynamics in ferrimagnetic materials with antiparallel aligned spin sub-lattices under action of spin-transfer torques (STT) is developed. We consider magnetization dynamics in GdFeCo layers in two cases of magnetic anisotropy: easy plane and easy axis. We demonstrate that, (i) for the easy plane anisotropy the precession of the Néel vector is conical and the cone angle de…
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A theory of magnetization dynamics in ferrimagnetic materials with antiparallel aligned spin sub-lattices under action of spin-transfer torques (STT) is developed. We consider magnetization dynamics in GdFeCo layers in two cases of magnetic anisotropy: easy plane and easy axis. We demonstrate that, (i) for the easy plane anisotropy the precession of the Néel vector is conical and the cone angle depends on the STT strength and the value of spin non-compensation, while the frequency of precession can reach sub-THz frequencies; (ii) for the easy axis anisotropy two regimes are possible: deterministic switching of the net magnetization and a conical sub-THz precession depending on the STT strength.
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Submitted 19 April, 2019;
originally announced April 2019.
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Breaking of 1RSB in random MAX-NAE-SAT
Authors:
Zsolt Bartha,
Nike Sun,
Yumeng Zhang
Abstract:
For several models of random constraint satisfaction problems, it was conjectured by physicists and later proved that a sharp satisfiability transition occurs. For random $k$-SAT and related models it happens at clause density $α$ around $2^k$. Just below the threshold, further results suggest that the solution space has a "1RSB" structure of a large bounded number of near-orthogonal clusters insi…
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For several models of random constraint satisfaction problems, it was conjectured by physicists and later proved that a sharp satisfiability transition occurs. For random $k$-SAT and related models it happens at clause density $α$ around $2^k$. Just below the threshold, further results suggest that the solution space has a "1RSB" structure of a large bounded number of near-orthogonal clusters inside the space of variable assignments $\{0,1\}^N$. In the unsatisfiable regime, it is natural to consider max-satisfiability: violating the least number of constraints. For a simplified variant, the strong refutation problem, there is strong evidence that an algorithmic transition occurs around $α= N^{k/2-1}$. For $α$ bounded in $N$, a very precise estimate of the max-sat value was obtained by Achlioptas, Naor, and Peres (2007), but it is not sharp enough to indicate the nature of the energy landscape. Later work (Sen, 2016; Panchenko, 2016) shows that for $α$ very large (roughly, above $64^k$) the max-sat value approaches the mean-field (complete graph) limit: this is conjectured to have an "FRSB" structure where near-optimal configurations form clusters within clusters, in an ultrametric hierarchy of infinite depth inside $\{0,1\}^N$. A stronger form of FRSB was shown in several recent works to have algorithmic implications (again, in complete graphs). Consequently we find it of interest to understand how the model transitions from 1RSB near the satisfiability threshold, to (conjecturally) FRSB for large $α$. In this paper we show that in the random regular $k$-NAE-SAT model, the 1RSB description breaks down already above $α\asymp 4^k/k^3$. This is proved by an explicit perturbation in the 2RSB parameter space, inspired by the "bug proliferation" mechanism proposed by physicists (Montanari and Ricci-Tersenghi, 2003; Krzakala, Pagnani, and Weigt, 2004).
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Submitted 15 May, 2019; v1 submitted 18 April, 2019;
originally announced April 2019.
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Phonon-Assisted Andreev Reflection at Majorana Zero Mode
Authors:
Ning Dai. Qing-Feng Sun
Abstract:
One of the typical features of Majorana zero mode (MZM) at the end of topological superconductor is a zero-bias peak in the tunneling spectroscopy of the normal lead-superconductor junction. In this paper we study on a model with one phonon mode coupling to the superconductor lead of the normal lead-superconductor junction, which can be viewed as an electron-lead/phonon-coupled-MZM/hole-lead struc…
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One of the typical features of Majorana zero mode (MZM) at the end of topological superconductor is a zero-bias peak in the tunneling spectroscopy of the normal lead-superconductor junction. In this paper we study on a model with one phonon mode coupling to the superconductor lead of the normal lead-superconductor junction, which can be viewed as an electron-lead/phonon-coupled-MZM/hole-lead structure. The phonon-coupled MZM acts as a series of channels in which electron can turn into hole by absorbing and emitting phonons. These channels present in the local density of states (LDOS) as a series of stripes, generating the corresponding peaks in the tunneling spectroscopy. In LDOS, the electron-phonon interaction narrows and redistributes the weight among stripes. In the tunneling spectroscopy, the heights of peaks present a feature of the multi-phonon process. With these investigations, our work illuminates the mechanism of phonon-assisted Andreev reflection at a Majorana zero mode.
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Submitted 17 February, 2019; v1 submitted 30 November, 2018;
originally announced November 2018.
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On the Equivalence between Spin and Charge Dynamics of the Fermi Hubbard Model
Authors:
Hui Zhai,
Ning Sun,
**long Yu,
Pengfei Zhang
Abstract:
Utilizing the Fermi gas microscope, recently the MIT group has measured the spin transport of the Fermi Hubbard model starting from a spin-density-wave state, and the Princeton group has measured the charge transport of the Fermi Hubbard model starting from a charge-density-wave state. Motivated by these two experiments, we prove a theorem that shows under certain conditions, the spin and charge t…
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Utilizing the Fermi gas microscope, recently the MIT group has measured the spin transport of the Fermi Hubbard model starting from a spin-density-wave state, and the Princeton group has measured the charge transport of the Fermi Hubbard model starting from a charge-density-wave state. Motivated by these two experiments, we prove a theorem that shows under certain conditions, the spin and charge transports can be equivalent to each other. The proof makes use of the particle-hole transformation of the Fermi Hubbard model and a recently discovered symmetry protected dynamical symmetry. Our results can be directly verified in future cold atom experiment with the Fermi gas microscope.
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Submitted 23 September, 2018; v1 submitted 22 August, 2018;
originally announced August 2018.
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Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design
Authors:
T. Nan,
T. J. Anderson,
J. Gibbons,
K. Hwang,
N. Campbell,
H. Zhou,
Y. Q. Dong,
G. Y. Kim,
N. Reynolds,
X. J. Wang,
N. X. Sun,
S. Y. Choi,
M. S. Rzchowski,
Yong Baek Kim,
D. C. Ralph,
C. B. Eom
Abstract:
Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition m…
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Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics.
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Submitted 20 August, 2018;
originally announced August 2018.
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Resonant Driving induced Ferromagnetism in the Fermi Hubbard Model
Authors:
Ning Sun,
Pengfei Zhang,
Hui Zhai
Abstract:
In this letter we consider quantum phases and the phase diagram of a Fermi Hubbard model under periodic driving that has been realized in recent cold atom experiments, in particular, when the driving frequency is resonant with the interaction energy. Due to the resonant driving, the effective Hamiltonian contains a correlated hop** term where the density occupation strongly modifies the hop**…
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In this letter we consider quantum phases and the phase diagram of a Fermi Hubbard model under periodic driving that has been realized in recent cold atom experiments, in particular, when the driving frequency is resonant with the interaction energy. Due to the resonant driving, the effective Hamiltonian contains a correlated hop** term where the density occupation strongly modifies the hop** strength. Focusing on half filling, in addition to the charge and spin density wave phases, large regions of ferromagnetic phase and phase separation are discovered in the weakly interacting regime. The mechanism of this ferromagnetism is attributed to the correlated hop** because the hop** strength within a ferromagnetic domain is normalized to a larger value than the hop** strength across the domain. Thus, the kinetic energy favors a large ferromagnetic domain and consequently drives the system into a ferromagnetic phase. We note that this is a different mechanism in contrast to the well-known Stoner mechanism for ferromagnetism where the ferromagnetism is driven by interaction energy.
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Submitted 17 September, 2018; v1 submitted 12 August, 2018;
originally announced August 2018.
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Deep Learning Topological Invariants of Band Insulators
Authors:
Ning Sun,
**min Yi,
Pengfei Zhang,
Huitao Shen,
Hui Zhai
Abstract:
In this work we design and train deep neural networks to predict topological invariants for one-dimensional four-band insulators in AIII class whose topological invariant is the winding number, and two-dimensional two-band insulators in A class whose topological invariant is the Chern number. Given Hamiltonians in the momentum space as the input, neural networks can predict topological invariants…
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In this work we design and train deep neural networks to predict topological invariants for one-dimensional four-band insulators in AIII class whose topological invariant is the winding number, and two-dimensional two-band insulators in A class whose topological invariant is the Chern number. Given Hamiltonians in the momentum space as the input, neural networks can predict topological invariants for both classes with accuracy close to or higher than 90%, even for Hamiltonians whose invariants are beyond the training data set. Despite the complexity of the neural network, we find that the output of certain intermediate hidden layers resembles either the winding angle for models in AIII class or the solid angle (Berry curvature) for models in A class, indicating that neural networks essentially capture the mathematical formula of topological invariants. Our work demonstrates the ability of neural networks to predict topological invariants for complicated models with local Hamiltonians as the only input, and offers an example that even a deep neural network is understandable.
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Submitted 9 June, 2018; v1 submitted 26 May, 2018;
originally announced May 2018.
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Spin-orbit torque and spin pum** in YIG/Pt with interfacial insertion layers
Authors:
Satoru Emori,
Alexei Matyushov,
Hyung-Min Jeon,
Christopher J. Babroski,
Tianxiang Nan,
Amine M. Belkessam,
John G. Jones,
Michael E. McConney,
Gail J. Brown,
Brandon M. Howe,
Nian X. Sun
Abstract:
We experimentally investigate spin-orbit torque and spin pum** in Y$_3$Fe$_5$O$_{12}$(YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pum**, whereas an insertion layer of Ni$_{80}$Fe$_{20}$ (permalloy, Py) enhances them, in a quantitatively consistent manner with the reciprocity of the two spin transmission…
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We experimentally investigate spin-orbit torque and spin pum** in Y$_3$Fe$_5$O$_{12}$(YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pum**, whereas an insertion layer of Ni$_{80}$Fe$_{20}$ (permalloy, Py) enhances them, in a quantitatively consistent manner with the reciprocity of the two spin transmission processes. However, we observe a large enhancement of Gilbert dam** with the insertion of Py that cannot be accounted for solely by spin pum**, suggesting significant spin-memory loss due to the interfacial magnetic layer. Our findings indicate that the magnetization at the YIG-metal interface strongly influences the transmission and depolarization of pure spin current.
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Submitted 29 April, 2018; v1 submitted 11 February, 2018;
originally announced February 2018.
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Universal relations for spin-orbit coupled Fermi gas near an s-wave resonance
Authors:
Pengfei Zhang,
Ning Sun
Abstract:
The synthetic spin-orbit coupled quantum gases is widely studied both experimentally and theoretically in recent years. As previous studies show, this modification of single-body dispersion will in general couple different partial waves and thus distort the wave-function of bound states which determines the short-distance behavior of many-body wave function. In this work, we focus on the two-compo…
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The synthetic spin-orbit coupled quantum gases is widely studied both experimentally and theoretically in recent years. As previous studies show, this modification of single-body dispersion will in general couple different partial waves and thus distort the wave-function of bound states which determines the short-distance behavior of many-body wave function. In this work, we focus on the two-component Fermi gas with one-dimensional or three-dimensional spin-orbit coupling near an s-wave resonance. Using the method of effective field theory and the operator product expansion, we derive universal relations for both systems, and obtain the momentum distribution matrix $\left<ψ^\dagger_a(\mathbf{q})ψ_b(\mathbf{q})\right>$ at large $\mathbf{q}$ ($a,b$ are spin index), which shows anisotropic features. We also discuss the experimental implication of these results depending on the realization of the spin-orbit coupling.
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Submitted 25 January, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
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Symmetry Protected Dynamical Symmetry in the Generalized Hubbard Models
Authors:
**long Yu,
Ning Sun,
Hui Zhai
Abstract:
In this letter we present a theorem on the dynamics of the generalized Hubbard models. This theorem shows that the symmetry of the single particle Hamiltonian can protect a kind of dynamical symmetry driven by the interactions. Here the dynamical symmetry refers to that the time evolution of certain observables are symmetric between the repulsive and attractive Hubbard models. We demonstrate our t…
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In this letter we present a theorem on the dynamics of the generalized Hubbard models. This theorem shows that the symmetry of the single particle Hamiltonian can protect a kind of dynamical symmetry driven by the interactions. Here the dynamical symmetry refers to that the time evolution of certain observables are symmetric between the repulsive and attractive Hubbard models. We demonstrate our theorem with three different examples in which the symmetry involves bipartite lattice symmetry, reflection symmetry and translation symmetry, respectively. Each of these examples relates to one recent cold atom experiment on the dynamics in the optical lattices where such a dynamical symmetry is manifested. These experiments include expansion dynamics of cold atoms, chirality of atomic motion within a synthetic magnetic field and melting of charge-density-wave order. Therefore, our theorem provides a unified view of these seemingly disparate phenomena.
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Submitted 30 August, 2017; v1 submitted 27 August, 2017;
originally announced August 2017.
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Quantum Charge Pumps with Topological Phases in Creutz Ladder
Authors:
Ning Sun,
Lih-King Lim
Abstract:
Quantum charge pum** phenomenon connects band topology through the dynamics of a one-dimensional quantum system. In terms of a microscopic model, the Su-Schrieffer-Heeger/Rice-Mele quantum pump continues to serve as a fruitful starting point for many considerations of topological physics. Here we present a generalized Creutz scheme as a distinct two-band quantum pump model. By noting that it und…
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Quantum charge pum** phenomenon connects band topology through the dynamics of a one-dimensional quantum system. In terms of a microscopic model, the Su-Schrieffer-Heeger/Rice-Mele quantum pump continues to serve as a fruitful starting point for many considerations of topological physics. Here we present a generalized Creutz scheme as a distinct two-band quantum pump model. By noting that it undergoes two kinds of topological band transitions accompanying with a Zak-phase-difference of $π$ and $2π$, respectively, various charge pum** schemes are studied by applying an elaborate Peierl's phase substitution. Translating into real space, the transportation of quantized charges is a result of cooperative quantum interference effect. In particular, an all-flux quantum pump emerges which operates with time-varying fluxes only and transports two charge units. This puts cold atoms with artificial gauge fields as an unique system where this kind of phenomena can be realized.
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Submitted 8 March, 2017;
originally announced March 2017.
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Interfacial spin-orbit torque without bulk spin-orbit coupling
Authors:
Satoru Emori,
Tianxiang Nan,
Amine M. Belkessam,
Xinjun Wang,
Alexei D. Matyushov,
Christopher J. Babroski,
Yuan Gao,
Hwaider Lin,
Nian X. Sun
Abstract:
An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise solely due to interfacial spin-orbit coupling, namely Rashba-Eldestein effects at metal/insulator interfaces. In magnetically soft NiFe sandwiched bet…
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An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise solely due to interfacial spin-orbit coupling, namely Rashba-Eldestein effects at metal/insulator interfaces. In magnetically soft NiFe sandwiched between a weak spin-orbit metal (Ti) and insulator (Al$_2$O$_3$), this torque appears as an effective field, which is significantly larger than the Oersted field and sensitive to insertion of an additional layer between NiFe and Al$_2$O$_3$. Our findings point to new routes for tuning spin-orbit torques by engineering interfacial electric dipoles.
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Submitted 12 February, 2016; v1 submitted 28 January, 2016;
originally announced January 2016.
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A novel method to evaluate spin diffusion length of Pt
Authors:
Y. Q. Zhang,
N. Y. Sun,
W. R. Che,
R. Shan,
Z. G. Zhu
Abstract:
Spin diffusion length of Pt is evaluated via proximity effect of spin orbit coupling (SOC) and anomalous Hall effect (AHE) in Pt/Co2FeAl bilayers. By varying the thicknesses of Pt and Co2FeAl layer, the thickness dependences of AHE parameters can be obtained, which are theoretically predicted to be proportional to the square of the SOC strength. According to the physical image of the SOC proximity…
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Spin diffusion length of Pt is evaluated via proximity effect of spin orbit coupling (SOC) and anomalous Hall effect (AHE) in Pt/Co2FeAl bilayers. By varying the thicknesses of Pt and Co2FeAl layer, the thickness dependences of AHE parameters can be obtained, which are theoretically predicted to be proportional to the square of the SOC strength. According to the physical image of the SOC proximity effect, the spin diffusion length of Pt can easily be identified from these thickness dependences. This work provides a novel method to evaluate spin diffusion length in a material with a small value.
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Submitted 6 January, 2016;
originally announced January 2016.
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Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching
Authors:
Tianxiang Nan,
Satoru Emori,
Bin Peng,
Xinjun Wang,
Zhongqiang Hu,
Li Xie,
Yuan Gao,
Hwaider Lin,
Di Lin,
Haosu Luo,
David Budil,
John G. Jones,
Brandon M. Howe,
Gail J. Brown,
Ming Liu,
Nian Sun
Abstract:
Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here we investigate resonant magnetizat…
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Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here we investigate resonant magnetization dynamics in ferromagnet/ferrolectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert dam** by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate.
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Submitted 7 September, 2015; v1 submitted 28 August, 2015;
originally announced August 2015.
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Comparison of spin-orbit torques and spin pum** across NiFe/Pt and NiFe/Cu/Pt interfaces
Authors:
Tianxiang Nan,
Satoru Emori,
Carl T. Boone,
Xinjun Wang,
Trevor M. Oxholm,
John G. Jones,
Brandon M. Howe,
Gail J. Brown,
Nian X. Sun
Abstract:
We experimentally investigate spin-orbit torques and spin pum** in NiFe/Pt bilayers with direct and interrupted interfaces. The dam**-like and field-like torques are simultaneously measured with spin-torque ferromagnetic resonance tuned by a dc bias current, whereas spin pum** is measured electrically through the inverse spin Hall effect using a microwave cavity. Insertion of an atomically t…
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We experimentally investigate spin-orbit torques and spin pum** in NiFe/Pt bilayers with direct and interrupted interfaces. The dam**-like and field-like torques are simultaneously measured with spin-torque ferromagnetic resonance tuned by a dc bias current, whereas spin pum** is measured electrically through the inverse spin Hall effect using a microwave cavity. Insertion of an atomically thin Cu dusting layer at the interface reduces the dam**-like torque, field-like torque, and spin pum** by nearly the same factor of ~1.4. This finding confirms that the observed spin-orbit torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We also find that spin-current scattering at the NiFe/Pt interface contributes to additional enhancement in magnetization dam** that is distinct from spin pum**.
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Submitted 12 February, 2016; v1 submitted 13 March, 2015;
originally announced March 2015.
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Redefinition of spin Hall magnetoresistance
Authors:
Yan-Qing Zhang,
Hua-Rui Fu,
Niu-Yi Sun,
Wen-Ru Che,
Ding Ding,
Juan Qin,
Cai-Yin You,
Zhen-Gang Zhu,
Rong Shan
Abstract:
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces of the film sample, which corresponds to different resistance states of polarized electron flow with various spin directions relative to the applied magnetic fi…
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Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces of the film sample, which corresponds to different resistance states of polarized electron flow with various spin directions relative to the applied magnetic field ($\mathbf{H}$), and brings about the SMR effect finally. The magnetic insulator layer, such as yttrium iron garnet (YIG), is not a requisite for the observation of SMR. Instead, the SMR effect is perfectly realized, with an order of magnitude increase, in the sample with a discontinuous layer of isolated-Co$_2$FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgO substrate. The model intuitively gives the typical relationship of SMR effect, i.e. $ρ_{\parallel}\approxρ_{\bot}>ρ_{T}$, where $ρ_{\bot}$, $ρ_{\parallel}$ and $ρ_{T}$ are longitudinal reisitivities with applied magnetic field ($\mathbf{H}$) direction perpendicular to the current direction out of plane (as Z direction), parallel with and perpendicular to it in plane (as X and Y direction), respectively. Our research reveals that the scattering between polarized and nonpolarized conduction electrons is the origin of SMR, and the intrinsic SMR is not constant when $\mathbf{H}$ direction rotates in XZ plane, which is distinct from that in the reported SMR mechanism.
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Submitted 15 February, 2015;
originally announced February 2015.
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Quantification of the spin-Hall anti-dam** torque with a resonance spectrometer
Authors:
Satoru Emori,
Tianxiang Nan,
Trevor M. Oxholm,
Carl T. Boone,
John G. Jones,
Brandon M. Howe,
Gail J. Brown,
David E. Budil,
Nian X. Sun
Abstract:
We present a simple technique using a cavity-based resonance spectrometer to quantify the anti-dam** torque due to the spin Hall effect. Modification of ferromagnetic resonance is observed as a function of small DC current in sub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB and strong spin-Hall metal Ta. From the detected current-induced linewidth change, we obtain an effect…
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We present a simple technique using a cavity-based resonance spectrometer to quantify the anti-dam** torque due to the spin Hall effect. Modification of ferromagnetic resonance is observed as a function of small DC current in sub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB and strong spin-Hall metal Ta. From the detected current-induced linewidth change, we obtain an effective spin Hall angle of 0.08-0.09 independent of the magnetic layer thickness. Our results demonstrate that a sensitive resonance spectrometer can be a general tool to investigate spin Hall effects in various material systems, even those with vanishingly low conductivity and magnetoresistance.
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Submitted 22 November, 2014;
originally announced November 2014.
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Proximity effect of spin orbit coupling in Pt/Co2FeAl and Pt/Permalloy bilayers_810571
Authors:
Yan-Qing Zhang,
Niu-Yi Sun,
Rong Shan,
Zhen-Gang Zhu
Abstract:
Proximity effect of spin orbit coupling is investigated through anomalous Hall effect in Pt/Co2FeAl and Pt/Permalloy bilayers. A series of nontrivial magnetotransport behaviors, resulting from a strong impact of phonons on skew scattering, is observed in these films with ultrathin ferromagnetic layers. The parameters representing skew scattering, side jump and intrinsic contributions are dramatica…
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Proximity effect of spin orbit coupling is investigated through anomalous Hall effect in Pt/Co2FeAl and Pt/Permalloy bilayers. A series of nontrivial magnetotransport behaviors, resulting from a strong impact of phonons on skew scattering, is observed in these films with ultrathin ferromagnetic layers. The parameters representing skew scattering, side jump and intrinsic contributions are dramatically enhanced when the ferromagnetic layer is very thin, and they have clear linear dependences on the reciprocal of ferromagnetic layer thickness, indicating a powerful influence of Pt/Ferromagnet interface. Further study on Cu/Co2FeAl and Ta/Co2FeAl bilayers reveals that a simple interface scattering without intense spin orbit coupling is not sufficient to trigger such a phenomenon. The proximity effect of spin orbit coupling is thus suggested to occur at the Pt/Ferromagnet interface, and as a result quite large anomalous Hall angle (0.036) and Nernst angle (0.23) are confirmed in the Pt/CFA films at room temperature.
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Submitted 26 September, 2013;
originally announced September 2013.
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The replica symmetric solution for Potts models on d-regular graphs
Authors:
Amir Dembo,
Andrea Montanari,
Allan Sly,
Nike Sun
Abstract:
We provide an explicit formula for the limiting free energy density (log-partition function divided by the number of vertices) for ferromagnetic Potts models on uniformly sparse graph sequences converging locally to the d-regular tree for d even, covering all temperature regimes. This formula coincides with the Bethe free energy functional evaluated at a suitable fixed point of the belief propagat…
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We provide an explicit formula for the limiting free energy density (log-partition function divided by the number of vertices) for ferromagnetic Potts models on uniformly sparse graph sequences converging locally to the d-regular tree for d even, covering all temperature regimes. This formula coincides with the Bethe free energy functional evaluated at a suitable fixed point of the belief propagation recursion on the d-regular tree, the so-called replica symmetric solution. For uniformly random d-regular graphs we further show that the replica symmetric Bethe formula is an upper bound for the asymptotic free energy for any model with permissive interactions.
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Submitted 23 July, 2012;
originally announced July 2012.
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The Hausdorff dimension of the CLE gasket
Authors:
Jason Miller,
Nike Sun,
David B. Wilson
Abstract:
The conformal loop ensemble $\mathrm{CLE}_κ$ is the canonical conformally invariant probability measure on noncrossing loops in a proper simply connected domain in the complex plane. The parameter $κ$ varies between $8/3$ and $8$; $\mathrm{CLE}_{8/3}$ is empty while $\mathrm {CLE}_8$ is a single space-filling loop. In this work, we study the geometry of the $\mathrm{CLE}$ gasket, the set of points…
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The conformal loop ensemble $\mathrm{CLE}_κ$ is the canonical conformally invariant probability measure on noncrossing loops in a proper simply connected domain in the complex plane. The parameter $κ$ varies between $8/3$ and $8$; $\mathrm{CLE}_{8/3}$ is empty while $\mathrm {CLE}_8$ is a single space-filling loop. In this work, we study the geometry of the $\mathrm{CLE}$ gasket, the set of points not surrounded by any loop of the $\mathrm{CLE}$. We show that the almost sure Hausdorff dimension of the gasket is bounded from below by $2-(8-κ)(3κ-8)/(32κ)$ when $4<κ<8$. Together with the work of Schramm-Sheffield-Wilson [Comm. Math. Phys. 288 (2009) 43-53] giving the upper bound for all $κ$ and the work of Nacu-Werner [J. Lond. Math. Soc. (2) 83 (2011) 789-809] giving the matching lower bound for $κ\le4$, this completes the determination of the $\mathrm{CLE}_κ$ gasket dimension for all values of $κ$ for which it is defined. The dimension agrees with the prediction of Duplantier-Saleur [Phys. Rev. Lett. 63 (1989) 2536-2537] for the FK gasket.
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Submitted 4 August, 2014; v1 submitted 4 June, 2012;
originally announced June 2012.
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Charged basal stacking fault (BSF) scattering in nitride semiconductors
Authors:
Aniruddha Konar,
Tian Fang,
Nan Sun,
Debdeep Jena
Abstract:
A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.
A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-polar GaN films consisting of a large number BSFs, and the result is compared with experimental data.
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Submitted 17 November, 2010; v1 submitted 2 November, 2010;
originally announced November 2010.
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Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering
Authors:
Aniruddha Konar,
Tian Fang,
Nan Sun,
Debdeep Jena
Abstract:
Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport a…
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Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport at low temperatures. At high temperatures, this anisotropy in charge transport is partially washed out by strong isotropic optical phonon scattering in GaN QW.
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Submitted 24 September, 2010; v1 submitted 11 September, 2010;
originally announced September 2010.
