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Observation of Inverse Edelstein Effect in Rashba-Split 2DEG between SrTiO3 and LaAlO3 at Room Temperature
Authors:
Qi Song,
Hongrui Zhang,
Tang Su,
Wei Yuan,
Yangyang Chen,
Wenyu Xing,
**g Shi,
Ji Rong Sun,
Wei Han
Abstract:
The Rashba physics has been intensively studied in the field of spin orbitronics, for the purpose of searching novel physical properties and the FM magnetization switching for technology applications. Here, we report the observation of the inverse Edelstein effect up to room temperature in the Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the LaAlO3 layer thickness from 3…
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The Rashba physics has been intensively studied in the field of spin orbitronics, for the purpose of searching novel physical properties and the FM magnetization switching for technology applications. Here, we report the observation of the inverse Edelstein effect up to room temperature in the Rashba-split 2DEG between two insulating oxides SrTiO3 and LaAlO3 with the LaAlO3 layer thickness from 3 to 40 unit cells (UC). We further demonstrate that the spin voltage could be dramatically manipulated by electric field effect for the 2DEG between SrTiO3 and 3 UC LaAlO3. These results demonstrate that the Rashba-split 2DEG at the complex oxide interface can be used for room temperature efficient charge-and-spin conversion for the generation and detection of spin current.
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Submitted 21 January, 2017; v1 submitted 20 September, 2016;
originally announced September 2016.
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Study of helium irradiation induced hardening in MNHS steel
Authors:
J. Wang,
Z. G. Wang,
E. Q. Xie,
N. Gao,
M. H. Cui,
T. L. Shen,
K. F. Wei,
C. F. Yao,
J. R. Sun,
Y. B. Zhu,
L. L. Pang,
D. Wang,
H. P. Zhu,
Y. Y. Du
Abstract:
A recently developed reduced activation ferritic/martensitic steel MNHS was irradiated with 200keV He ions to a fluence of 1E21ions/m^2 at 450 celsius degree and 1E20ions/m^2 at 300 celsius degree and 450 celsius degree, respectively. The irradiation hardening of the steel was investigated by nanoindentation measurements combined with transmission electron microscopy (TEM) analysis. Dispersed barr…
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A recently developed reduced activation ferritic/martensitic steel MNHS was irradiated with 200keV He ions to a fluence of 1E21ions/m^2 at 450 celsius degree and 1E20ions/m^2 at 300 celsius degree and 450 celsius degree, respectively. The irradiation hardening of the steel was investigated by nanoindentation measurements combined with transmission electron microscopy (TEM) analysis. Dispersed barrier-hardening (DBH) model was applied to predict the hardness increments based on TEM analysis. The predicted hardness increments are consistent with the values obtained by nanoindentation tests. It is found that dislocation loops and He bubbles are hard barriers against dislocation motion and they are the main contributions to He irradiation-induced hardening of MNHS steel. The obstacle strength of He bubbles is stronger than the obstacle strength of dislocation loops.
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Submitted 24 March, 2015;
originally announced March 2015.
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Visible light enhanced field effect at LaAlO3/SrTiO3 interface
Authors:
Y. Lei,
Y. Z. Chen,
Y. W. Xie,
Y. Li,
Y. S. Chen,
S. H. Wang,
J. Wang,
B. G. Shen,
N. Pryds,
H. Y. Hwang,
J. R. Sun
Abstract:
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a qu…
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Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.
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Submitted 23 May, 2014;
originally announced May 2014.
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Energy deposition by heavy ions: Additivity of kinetic and potential energy contributions in hillock formation on CaF2
Authors:
Y. Y. Wang,
C. Grygiel,
C. Dufour,
J. R. Sun,
Z. G. Wang,
Y. T. Zhao,
G. Q. Xiao,
R. Cheng,
X. M. Zhou,
J. R. Ren,
S. D. Liu,
Y. Lei,
Y. B. Sun,
R. Ritter,
E. Gruber,
A. Cassimi,
I. Monnet,
S. Bouffard,
F. Aumayr,
M. Toulemonde
Abstract:
The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electr…
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The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electronic energy loss is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via electronic energy loss the potential energy threshold for hillock production can be substantially lowered. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, as demonstrated when plotting the results in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to case where kinetic and potential energies are deposited into the surface.
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Submitted 17 February, 2014;
originally announced February 2014.
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High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities
Authors:
Y. Z. Chen,
N. Pryds,
J. R. Sun,
B. G. Shen,
S. Linderoth
Abstract:
The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been ma…
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The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electronics. Particularly, the 2DEG at the interface between two perovskite insulators represented by the formula of ABO3, such as LaAlO3 and SrTiO3, has attracted significant attention. In recent years, progresses have been made to decipher the puzzle of the origin of interface conduction, to design new types of oxide interfaces, and to improve the interfacial carrier mobility significantly. These achievements open the door to explore fundamental as well as applied physics of complex oxides. Here, we review our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures. Due to the presence of oxygen-vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 involves Al, Ti, Zr, or Hf elements at the B-sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. The spinel/perovskite oxide 2DEG exhibits an electron mobility exceeding 100,000 cm2V-1s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for design of high-mobility all-oxide electronic devices and open a route towards studies of mesoscopic physics with complex oxides.
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Submitted 9 September, 2013;
originally announced September 2013.
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Non-filamentary memristive switching in Pt/CuOx/Si/Pt systems
Authors:
L. L. Wei,
D. S. Shang,
J. R. Sun,
S. B. Lee,
Z. G. Sun,
B. G. Shen
Abstract:
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron sp…
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We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron spectroscopy analysis, a model based on Cu ion and oxygen vacancy drift, and thickness change of the SiOx layer at the CuOx/Si interface was proposed for the memristive switching and gradual electroforming, respectively. The present work would be meaningful for the preparation of forming-free and homogeneous memristive devices.
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Submitted 15 April, 2013;
originally announced April 2013.
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A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
Authors:
Y. Z. Chen,
N. Bovet,
F. Trier,
D. V. Christensen,
F. M. Qu,
N. H. Andersen,
T. Kasama,
W. Zhang,
R. Giraud,
J. Dufouleur,
T. S. Jespersen,
J. R. Sun,
A. Smith,
J. Nygård,
L. Lu,
B. Büchner,
B. G. Shen,
S. Linderoth,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain…
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The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
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Submitted 1 April, 2013;
originally announced April 2013.
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Recent progress in exploring magnetocaloric materials
Authors:
B. G. Shen,
J. R. Sun,
F. X. Hu,
H. W. Zhang,
Z. H. Cheng
Abstract:
Magnetic refrigeration based on the magnetocaloric effect (MCE) of materials is a potential technique that has prominet advantages over the currently used gas compression-expansion technique in the sense of its high efficiency and environment friendship. In this article, our recent progress in explorating effective MCE materials is reviewed with the emphasis on the MCE in the LaFe13-xSix-based all…
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Magnetic refrigeration based on the magnetocaloric effect (MCE) of materials is a potential technique that has prominet advantages over the currently used gas compression-expansion technique in the sense of its high efficiency and environment friendship. In this article, our recent progress in explorating effective MCE materials is reviewed with the emphasis on the MCE in the LaFe13-xSix-based alloys with a first order magnetic transition discovered by us. These alloys show large entropy changes in a wide temperature range near room temperature. Effects of magnetic rare-earth do**, interstitial atom, and high pressure on the MCE have been systematically studied. Special issues such as appropriate approaches to determining the MCE associated with the first-order magnetic transition, the depression of magnetic and thermal hystereses, and the key factors determining the magnetic exchange in alloys of this kind are discussed. The applicability of the giant MCE materials to the magnetic refrigeration near ambient temperature is evaluated. A brief review of other materials with significant MCE is also presented in the article.
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Submitted 17 June, 2010;
originally announced June 2010.
