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Temperature and Pressure Dependent Luminescence Mechanism of Zinc-Blende Structured ZnS:Mn Nanophosphor under UV and X-ray Excitations
Authors:
A. K. Somakumar,
Y. Zhydachevskyy,
D. Wlodarczyk,
S. S Haider,
J. Barzowska,
K. R Bindu,
Y. K. Edathumkandy,
Tatiana Zajarniuk,
A. Szewczyk,
S. Narayanan,
A. Lysak,
H. Przybylińska,
E. I Anila,
A. Suchocki
Abstract:
A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation method and shows excellent orange luminescence at ambient conditions related to the 4T1->6A1 transition. The sample shows stable and identical luminescence behavi…
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A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation method and shows excellent orange luminescence at ambient conditions related to the 4T1->6A1 transition. The sample shows stable and identical luminescence behavior under both UV and X-ray excitation at ambient conditions and also shows excellent self-powered mechanoluminescence properties. The pressure and temperature-induced luminescence mechanism of the phosphor is also established. The shift of the 4T1->6A1 luminescence band of Mn2+ with both pressure and temperature and the luminescence mechanism is explained via the d5 Tanabe Sugano diagram. The broad luminescence band of 4T1->6A1 transition shifts from visible to near-infrared range at a rate of -35.8 meV/GPa with the increase of pressure and it is subsequently quenched completely at a pressure of 16.41 GPa due to a reversible phase transition from zinc blende to rocksalt phase. The high-pressure and temperature-dependent decay kinetics measurements of the sample luminescence are also reported.
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Submitted 19 April, 2024;
originally announced April 2024.
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UV- and X-ray-activated broadband NIR garnet-type Ca3Ga2Sn3O12:Fe3+ phosphors with efficient persistent luminescence
Authors:
Yongjie Wang,
Qingzhou Bu,
Dongshuo Li,
Shuai Yang,
Li Li,
Guotao Xiang,
Sha Jiang,
Ying Chang,
Chuan **g,
Xianju Zhou,
Lev-Ivan Bulyk,
Andrzej Suchocki
Abstract:
Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are compact light sources of great interest for NIR spectroscopy applications. Beyond typical Cr3+-activated NIR-emitting phosphors, there exists a strong demand for Cr3+-free alternatives with high efficiency and broadband emission to rich the landscape of NIR luminescent materials and extend their range of application fields. H…
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Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are compact light sources of great interest for NIR spectroscopy applications. Beyond typical Cr3+-activated NIR-emitting phosphors, there exists a strong demand for Cr3+-free alternatives with high efficiency and broadband emission to rich the landscape of NIR luminescent materials and extend their range of application fields. Here, we report a series of Fe3+-activated Ca3Ga2Sn3O12 garnet-type phosphors exhibiting broadband NIR emission in the 650-1000 nm range attributed to 4T1(G)-->6A1(S) transition, with a maximum at 754 nm and a FWHM of 89 nm upon UV excitation. The spectroscopic results were analyzed according to the Tanabe-Sugano theory from which the crystal field parameter Dq and Racah parameters B and C were obtained for the octahedrally coordinated Fe3+ ion. Notably, the NIR persistent luminescence lasting over 1 h was detected following UV or X-ray irradiation. The possible mechanism involving electron traps was proposed to explain the observed persistent luminescence. Furthermore, a NIR pc-LED was fabricated by coating synthesized phosphor on a UV chip, and its performance was evaluated to assess its potential suitability as a NIR light source. Our discovery of novel type of nontoxic Fe3+-activated broadband NIR luminescence phosphors with efficient NIR persistent luminescence paves the way for discovering Cr3+-free multifunctional NIR luminescence materials, thereby expanding their application possibilities.
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Submitted 22 March, 2024;
originally announced March 2024.
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Luminescence properties and phase transformation of broadband NIR emitting A2(WO4)3:Cr3+ (A=Al3+, Sc3+) phosphors toward NIR spectroscopy applications
Authors:
Shuai Yang,
Yongjie Wang,
Guotao Xiang,
Sha Jiang,
Li Li,
Faling Ling,
Huanhuan Hu,
Yuanyuan Zhang,
Xianju Zhou,
Andrzej Suchocki
Abstract:
The synthesis, structural, and luminescence properties have been carried out for Cr3+-activated Al2(WO4)3 (AWO) and Sc2(WO4)3 (SWO) phosphors for application in pc-NIR LED. Upon blue excitation, these compounds are capable of exhibiting broadband NIR emission stems primarily from 4T2-->4A2 transition in the range of 670-1200 nm (maxima ~808 nm, FWHM ~140 nm) for AWO:Cr and of 700-1300 nm (maxima ~…
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The synthesis, structural, and luminescence properties have been carried out for Cr3+-activated Al2(WO4)3 (AWO) and Sc2(WO4)3 (SWO) phosphors for application in pc-NIR LED. Upon blue excitation, these compounds are capable of exhibiting broadband NIR emission stems primarily from 4T2-->4A2 transition in the range of 670-1200 nm (maxima ~808 nm, FWHM ~140 nm) for AWO:Cr and of 700-1300 nm (maxima ~870 nm, FWHM ~164 nm) for SWO:Cr. The significant shift of NIR emission is attributed to the substitution of AlO6 with larger ScO6 octahedrons. To gain insight into the luminescence the crystal field strength, Racah parameters, nephelauxetic effect, and electron-phonon coupling have been analyzed based on spectroscopic results. The electron-phonon coupling parameter S for SWO:Cr was determined to be 11.5, twice as large as that for AWO:Cr, which is in accordance with its strong thermal quenching. The abrupt changes occurring at 275 K in temperature-dependent luminescence spectra and decay lifetime of AWO:Cr is associated with temperature-driven phase transformation from low-temperature monoclinic to high-temperature orthorhombic phase. Pressure induced amorphization of AWO:Cr at pressures higher than 25 kbar was confirmed by employing high pressure evolution of Raman spectra. A high-power NIR pc-LED, fabricated by coating AWO:0.04Cr on a commercial 470 nm LED chip, shows good performance with an output power of 17.1 mW driven by a current of 320 mA, revealing potential application of studied materials for NIR light source.
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Submitted 22 March, 2024;
originally announced March 2024.
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Defect-Induced Strain-Tunable Photoluminescence in AgScP$_2$S$_6$
Authors:
Abhishek Mukherjee,
Damian Wlodarczyk,
Ajeesh K. Somakumar,
Piotr Sybilski,
Ryan Siebenaller,
Michael A. Susner,
Andrzej Suchocki,
Svetlana V. Boriskina
Abstract:
Metal thiophosphates (MTPs) are a large family of 2D materials that exhibit large structural and chemical diversity. They also show promise for applications in energy harvesting and photodetection. Strain and defect engineering have previously been demonstrated as useful mechanisms to tune several properties of MTPs such as resistivity, magnetic state, and electronic band gap. However, the effect…
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Metal thiophosphates (MTPs) are a large family of 2D materials that exhibit large structural and chemical diversity. They also show promise for applications in energy harvesting and photodetection. Strain and defect engineering have previously been demonstrated as useful mechanisms to tune several properties of MTPs such as resistivity, magnetic state, and electronic band gap. However, the effect of these stimuli on engineering tunable light emission in MTPs remains unexplored. Here, we show experimentally that structural defects in metal thiophosphate AgScP$_2$S$_6$ are prominent in exhibiting photoluminescence, which is likely driven by the defect-state-to-conduction-band transitions and can be further tuned by temperature-induced strain gradients.
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Submitted 3 March, 2024;
originally announced March 2024.
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Chemical tuning of photo- and persistent luminescence of Cr3+-activated beta-Ga2O3 by alloying with Al2O3 and In2O3
Authors:
Vasyl Stasiv,
Yaroslav Zhydachevskyy,
Vitalii Stadnik,
Vasyl Hreb,
Vitaliy Mykhaylyk,
Leonid Vasylechko,
Andriy Luchechko,
Tomasz Wojciechowski,
Piotr Sybilski,
Andrzej Suchocki
Abstract:
An effect of alloying of the monoclinic beta- Ga2O3 with Al2O3 and In2O3 on the photoluminescent, thermoluminescent and persistent luminescent properties of Cr3+ ions has been comprehensively investigated. For this purpose, various series of Cr3+ and Ca2+ co-doped microcrystalline phosphors were synthesized by the solution combustion method, including pseudobinary compounds like (Ga-Al)2O3 with up…
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An effect of alloying of the monoclinic beta- Ga2O3 with Al2O3 and In2O3 on the photoluminescent, thermoluminescent and persistent luminescent properties of Cr3+ ions has been comprehensively investigated. For this purpose, various series of Cr3+ and Ca2+ co-doped microcrystalline phosphors were synthesized by the solution combustion method, including pseudobinary compounds like (Ga-Al)2O3 with up to 20% Al and (Ga-In)2O3 with up to 50% In as well as pseudoternary compounds (Ga Al In)2O3 with balanced proportion of Al, Ga and In. The phase composition and crystal structure of the obtained materials were examined by X-ray powder diffraction technique. Detailed luminescence studies were conducted for the (Ga-Al)2O3 and (Ga-In)2O3 compounds which exhibited a single-phase monoclinic structure. Low-temperature and time-resolved photoluminescence investigations of the Cr-doped pseudobinary compounds unveiled several types of Cr3+ centres, attributed to the Al-, Ga- and In-centred octahedra in the studied alloys. The obtained results underscore the benefit of bandgap engineering through alteration in the host lattice chemical composition for efficient tuning of the thermoluminescent and persistent luminescent properties of the near-infrared-emitting beta Ga2O3:Cr based phosphors. Furthermore, it was demonstrated that modification of the chemical composition of the host lattice also adjusts the thermometric performance of the studied phosphors. Indeed, the specific sensitivity of the beta- Ga2O3:Cr3+ decay time luminescence thermometer showed nearly twofold enhancement when the host lattice was alloyed with 30% of In2O3.
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Submitted 23 February, 2024; v1 submitted 13 February, 2024;
originally announced February 2024.
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Influence of high pressure on Ce3+ luminescence in LuAlO3 and YAlO3 single crystals and single crystalline layers
Authors:
Lev Ivan Bulyk,
Ajeesh Kumar Somakumar,
Hanka Przybylińska,
P. Ciepielewski,
Yu. Zorenko,
Ya. Zhydachevskyy,
I. Kudryavtseva,
V. Gorbenko,
A. Lushchik,
M. G. Brik,
Y. Syrotych,
S. Witkiewicz-Łukaszek,
A. Fedorov,
Andrzej Suchocki
Abstract:
Results of spectroscopic studies at ambient and high pressures of a LuAlO3:Ce3+ (LuAP:Ce) single crystalline film (SCF) as well as LuAP:Ce and YAlO3:Ce (YAP:Ce) single crystals are reported. Room temperature absorption measurements of the single crystals in the vacuum UV region allowed establishing the bandgap energies of 7.63 eV for YAP and 7.86 eV for LuAP, with an assumption of the direct band-…
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Results of spectroscopic studies at ambient and high pressures of a LuAlO3:Ce3+ (LuAP:Ce) single crystalline film (SCF) as well as LuAP:Ce and YAlO3:Ce (YAP:Ce) single crystals are reported. Room temperature absorption measurements of the single crystals in the vacuum UV region allowed establishing the bandgap energies of 7.63 eV for YAP and 7.86 eV for LuAP, with an assumption of the direct band-gaps. Luminescence of Ce3+ in LuAP and YAP bulk crystals was measured as a function of temperature from 6 K up to 873 K. Temperature quenching of the Ce3+ luminescence in YAP:Ce was observed above 650 K, which is related to the location of the lowest Ce3+ 5d level at 1.27 eV below the conduction band minimum. No temperature quenching occurred in LuAP:Ce up to 873 K, mostly due to the lower energy of the 4f levels with respect to the valence band maximum. The barycenter energies and splittings of Ce3+ 5d states in YAP and LuAP at room temperature were precisely established. Theoretical calculations of the Ce3+ 5d states energy structure under pressure revealed a discrepancy between the obtained experimental results and the prediction of Dorenbos' theoretical model. The discrepancy can be removed if instead of the 5d state of the free Ce3+ ion the bandgap of the compound is taken as reference energy for the red shift of the 5d level. This hypothesis also allows us to take into account the pressure-induced increase of the bandgap energy, expected for the studied compounds. Pressure dependences of LuAP:Ce luminescence spectra suggest that a certain type of phase transition occurs above 15 GPa.
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Submitted 11 February, 2024;
originally announced February 2024.
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Pressure influence on excitonic luminescence of CsPbBr3 perovskite
Authors:
Lev Ivan Bulyk,
Taras Demkiv,
Oleh Antonyak,
Yaroslav M. Chornodolskyy,
Roman Gamernyk,
Andrzej Suchocki,
Anatolii Voloshinovskii
Abstract:
This study investigates the effect of hydrostatic pressure on the luminescence properties of CsPbBr3 single crystals at 12 K. The luminescence at the edge of the band gap reveals a structure attributed to free excitons, phonon replica of the free excitons, and Rashba excitons. Changes in the relative intensity of the free and Rashba excitons were observed with increasing pressure, caused by change…
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This study investigates the effect of hydrostatic pressure on the luminescence properties of CsPbBr3 single crystals at 12 K. The luminescence at the edge of the band gap reveals a structure attributed to free excitons, phonon replica of the free excitons, and Rashba excitons. Changes in the relative intensity of the free and Rashba excitons were observed with increasing pressure, caused by changes in the probability of nonradiative deexcitation. At pressures around 3 GPa, luminescence completely fades away. The red shift of the energy position of the maximum luminescence of free and Rashba excitons in pressure ranges of 0-1.3 GPa is attributed to the length reduction of Pb-Br bonds in [PbBr6]4- octahedra, while the high-energy shift of the Rashba excitons at pressures above 1.3 GPa is due to [PbBr6]4- octahedra rotation and changes in the Pb-Br_Pb angle.
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Submitted 29 October, 2023;
originally announced October 2023.
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Non equilibrium anisotropic excitons in atomically thin ReS$_2$
Authors:
J. M. Urban,
M. Baranowski,
A. Kuc,
L. Klopotowski,
A. Surrente,
Y. Ma,
D. Wlodarczyk,
A. Suchocki,
D. Ovchinnikov,
T. Heine,
D. K. Maude,
A. Kis,
P. Plochocka
Abstract:
We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Bo…
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We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS$_2$ to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.
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Submitted 8 November, 2018;
originally announced November 2018.
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Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
Authors:
J. M. Urban,
M. Baranowski,
A. Surrente,
D. Wlodarczyk,
A. Suchocki,
G. Long,
Y. Wang,
L. Klopotowski,
N. Wang,
D. K. Maude,
P. Plochocka
Abstract:
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilay…
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We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.
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Submitted 22 November, 2017;
originally announced November 2017.
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Metastability of Mn$^{3+}$ in ZnO driven by strong $d$(Mn) intrashell Coulomb repulsion: experiment and theory
Authors:
A. Ciechan,
H. Przybylińska,
P. Bogusławski,
A. Suchocki,
A. Grochot,
A. Mycielski,
P. Skupiński,
K. Grasza
Abstract:
Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier…
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Depopulation of the Mn$^{2+}$ state in ZnO:Mn upon illumination, monitored by quenching of the Mn$^{2+}$ EPR signal intensity, was observed at temperatures below 80~K. Mn$^{2+}$ photoquenching is shown to result from the Mn$^{2+}$ $\to$ Mn$^{3+}$ ionization transition, promoting one electron to the conduction band. Temperature dependence of this process indicates the existence of an energy barrier for electron recapture of the order of 1~meV. GGA$+U$ calculations show that after ionization of Mn$^{2+}$ a moderate breathing lattice relaxation in the 3+ charge state occurs, which increases energies of $d$(Mn) levels. At its equilibrium atomic configuration, Mn$^{3+}$ is metastable since the direct capture of photo-electron is not possible. The metastability is mainly driven by the strong intra-shell Coulomb repulsion between $d$(Mn) electrons. Both the estimated barrier for electron capture and the photoionization energy are in good agreement with the experimental values.
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Submitted 9 June, 2016;
originally announced June 2016.
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Lattice parameters and stability of the spinel compounds in relation to the ionic radii and electronegativities of constituting chemical elements
Authors:
M. G. Brik,
A. Suchocki,
A. Kamińska
Abstract:
A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between…
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A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between the experimental and modeled values of the lattice parameters in the considered group of spinels, with an average relative error of about 1% only. The proposed model was improved further by separate consideration of several groups of spinels, depending on the nature of the anion (oxygen, sulfur, selenium/tellurium, nitrogen). The developed approach can be efficiently used for prediction of lattice constants for new isostructural materials. In particular, the lattice constants of new hypothetic spinels ZnRE2O4, CdRE2S4, CdRE2Se4 (RE=rare earth elements) are predicted in the present paper. In addition, the upper and lower limits for the variation of the ionic radii, electronegativities and certain their combinations were established, which can be considered as stability criteria for the spinel compounds. The findings of the present paper offer a systematic overview of the structural properties of spinels and can serve as helpful guides for synthesis of new spinel compounds.
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Submitted 17 April, 2014; v1 submitted 26 January, 2014;
originally announced January 2014.
