Showing 1–12 of 12 results for author: Stroud, R M

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Authors: Zachariah Hennighausen, Bethany M. Hudak, Madeleine Phillips, Jisoo Moon, Kathleen M. McCreary, Hsun-Jen Chuang, Matthew R. Rosenberger, Berend T. Jonker, Connie H. Li, Rhonda M. Stroud, Olaf M. van't Erve

Abstract: Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nano… ▽ More Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature

Authors: Zachariah Hennighausen, Darshana Wickramaratne, Kathleen M. McCreary, Bethany M. Hudak, Todd Brintlinger, Hsun-Jen Chuang, Mehmet A. Noyan, Berend T. Jonker, Rhonda M. Stroud, Olaf M. vant Erve

Abstract: Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence… ▽ More Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: Published: ACS Appl. Mater. Interfaces 2022

Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics

Authors: Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Andrew C. Lang, Rhonda M. Stroud, David J. Meyer

Abstract: Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface rough… ▽ More Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits. △ Less

Submitted 24 March, 2020; originally announced March 2020.

Journal ref: Nat Commun 11, 2314 (2020)

Enabling remote quantum emission in 2D semiconductors via porous metallic networks

Authors: Jose J. Fonseca, Andrew L. Yeats, Brandon Blue, Maxim Zalalutdinov, Todd Brintlinger, Blake S. Simpkins, Daniel C. Ratchford, James C. Culbertson, Joel Q. Grim, Samuel G. Carter, Masa Ishigami, Rhonda M. Stroud, Cory Cress, Jeremy T. Robinson

Abstract: The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in… ▽ More The interaction between two-dimensional crystals (2DCs) and metals is ubiquitous in 2D material research. Here we report how 2DC overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a 'reverse epitaxial' process where initially nanocrystalline Au films become highly textured and in close crystallographic registry to the 2D crystal overlayer. With continued annealing, the metal underlayer dewets to form an oriented pore enabled network (OPEN) film in which the 2DC overlayer remains suspended above or coats the inside of the metal pores. This OPEN film geometry supports SPPs launched by either direct laser excitation or by light emitted from the TMD semiconductor itself, where energy in-coupling and out-coupling occurs at the metal pore sites such that dielectric spacers between the metal and 2DC layer are unnecessary. At low temperatures a high density of single-photon emitters (SPEs) is present across an OPEN-WSe2 film, and we demonstrate non-local excitation of SPEs at a distance of 17 μm with minimal loss of photon purity. Our results suggest the OPEN film geometry is a versatile platform that could facilitate the use of layered materials in quantum optics systems. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Comments: 15 pages, 4 figures

Journal ref: Nature Communications 11, 5 (2020)

Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures

Authors: Daniel C. Ratchford, Christopher J. Winta, Ioannis Chatzakis, Chase T. Ellis, Nikolai C. Passler, Jonathan Winterstein, Pratibha Dev, Ilya Razdolski, Joseph G. Tischler, Igor Vurgaftman, Michael B. Katz, Neeraj Nepal, Matthew T. Hardy, Jordan A. Hachtel, Juan Carlos Idrobo, Thomas L. Reinecke, Alexander J. Giles, D. Scott Katzer, Nabil D. Bassim, Rhonda M. Stroud, Martin Wolf, Alexander Paarmann, Joshua D. Caldwell

Abstract: Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technological opportunities for nanophotonics in the infrared (IR) spectral region. Here, we present a novel approach to overcome the major limitation of SPhPs, namely the narrow, material-specific spectral range where SPhPs can be… ▽ More Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technological opportunities for nanophotonics in the infrared (IR) spectral region. Here, we present a novel approach to overcome the major limitation of SPhPs, namely the narrow, material-specific spectral range where SPhPs can be supported, called the Reststrahlen band. We use an atomic-scale superlattice (SL) of two polar semiconductors, GaN and AlN, to create a hybrid material featuring layer thickness-tunable optic phonon modes. As the IR dielectric function is governed by the optic phonon behavior, such control provides a means to create a new dielectric function distinct from either constituent material and to tune the range over which SPhPs can be supported. This work offers the first glimpse of the guiding principles governing the degree to which the dielectric function can be designed using this approach. △ Less

Submitted 18 June, 2018; originally announced June 2018.

High pressure, high temperature molecular do** of nanodiamond

Authors: Matthew J Crane, Alessio Petrone, Ryan A. Beck, Matthew B. Lim, Xuezhe Zhou, Xiaosong Li, Rhonda M. Stroud, Peter J. Pauzauskie

Abstract: The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation, by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for colo… ▽ More The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation, by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon-vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically-inactive argon pressure medium, which may explain the hysteresis effects observed in other high pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond, and may enable the controlled generation of designer defects. △ Less

Submitted 1 April, 2018; originally announced April 2018.

Comments: 12 pages, 4 figures

Photothermal effects during nanodiamond synthesis from a carbon aerogel in a laser-heated diamond anvil cell

Authors: Matthew J. Crane, Bennett E. Smith, Peter B. Meisenheimer, Xuezhe Zhou, Rhonda M. Stroud, E. James Davis, Peter J. Pauzauskie

Abstract: Nanodiamonds have emerged as promising materials for quantum computing, biolabeling, and sensing due to their ability to host color centers with remarkable photostability and long spin-coherence times at room temperature. Recently, a bottom-up, high-pressure, high-temperature (HPHT) approach was demonstrated for growing nanodiamonds with color centers from amorphous carbon precursors in a laser-he… ▽ More Nanodiamonds have emerged as promising materials for quantum computing, biolabeling, and sensing due to their ability to host color centers with remarkable photostability and long spin-coherence times at room temperature. Recently, a bottom-up, high-pressure, high-temperature (HPHT) approach was demonstrated for growing nanodiamonds with color centers from amorphous carbon precursors in a laser-heated diamond anvil cell (LH-DAC) that was supported by a near-hydrostatic noble gas pressure medium. However, a detailed understanding of the photothermal heating and its effect on diamond growth, including the phase conversion conditions and the temperature-dependence of color center formation, has not been reported. In this work, we measure blackbody radiation during LH-DAC synthesis of nanodiamond from carbon aerogel to examine these temperature-dependent effects. Blackbody temperature measurements suggest that nanodiamond growth can occur at 16.3 GPa and 1800 K. We use Mie theory and analytical heat transport to develop a predictive photothermal heating model. This model demonstrates that melting the noble gas pressure medium during laser heating decreases the local thermal conductivity to drive a high spatial resolution of phase conversion to diamond. Finally, we observe a temperature-dependent formation of nitrogen vacancy centers and interpret this phenomenon in the context of HPHT carbon vacancy diffusion using CBΩ theory. △ Less

Submitted 13 October, 2017; originally announced October 2017.

Comments: 5 Figures, 1 Table, Submitted

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2

Authors: Kathleen M. McCreary, Aubrey T. Hanbicki, Simranjeet Singh, Roland K. Kawakami, Glenn G. Jernigan, Masa Ishigami, Amy Ng, Todd H. Brintlinger, Rhonda M. Stroud, Berend T. Jonker

Abstract: We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). I… ▽ More We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties. △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: final manuscript available at Scientific Reports

Journal ref: Scientific Reports 6, Article number: 35154 (2016)

Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Authors: Thomas J. Zega, Aubrey T. Hanbicki, Steven C. Erwin, Igor Zutic, George Kioseoglou, Connie H. Li, Berend T. Jonker, Rhonda M. Stroud

Abstract: We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and A… ▽ More We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface. △ Less

Submitted 8 May, 2006; originally announced May 2006.

Comments: 16 pages (including cover), 4 figures

Journal ref: Phys. Rev. Lett. 96, 196101 (2006)

Electrical Spin Pum** of Quantum Dots at Room Temperature

Authors: C. H. Li, G. Kioseoglou, O. M. J. van t Erve, M. E. Ware, D. Gammon, R. M. Stroud, B. T. Jonker, R. Mallory, M. Yasar, A. Petrou

Abstract: We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temper… ▽ More We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices. △ Less

Submitted 31 January, 2005; originally announced January 2005.

Comments: 4 figures, accepted by Appl. Phys. Lett

Reduction Of Spin Injection Efficiency by Interface Spin Scattering

Authors: R. M. Stroud, A. T. Hanbicki, Y. D. Park, A. G. Petukhov, B. T. Jonker, G. Itskos, G. Kioseoglou, M. Furis, A. Petrou

Abstract: We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.… ▽ More We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%. △ Less

Submitted 26 October, 2001; originally announced October 2001.

Comments: 13 pages, 5 figures; submitted to PRL

Journal ref: Phys. Rev. Lett. 89, 166602 (2002)

The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states

Authors: B. Nadgorny, I. I. Mazin, M. Osofsky, R. J. Soulen, Jr., P. Broussard, R. M. Stroud, D. J. Singh, V. G. Harris, A. Arsenov, Ya. Mukovskii

Abstract: Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant increase in the current spin polarization with the residual resistivity. This counterintuitive trend can be understood as a transition from ballistic to diff… ▽ More Using the point contact Andreev reflection technique, we have carried out a systematic study of the spin polarization in the colossal magnetoresistive manganite, La$_{0.7}$Sr$_{0.3}$MnO$_{3}$} (LSMO). Surprisingly, we observed a significant increase in the current spin polarization with the residual resistivity. This counterintuitive trend can be understood as a transition from ballistic to diffusive transport in the contact. Our results strongly suggest that LSMO does have minority spin states at the Fermi level. However, since its current spin polarization is much higher than that of the density of states, this material can mimic the behavior of a true half-metal in transport experiments. Based on our results we call this material a {\it transport} half-metal. △ Less

Submitted 10 November, 2000; originally announced November 2000.

Comments: 6 pages, revtex, epsfigs embedded (two color figs)

Journal ref: Phys. Rev. B, 63, 184433, 2001