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Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Authors:
Mathieu Luisier,
Cedric Klinkert,
Sara Fiore,
Jonathan Backman,
Youseung Lee,
Christian Stieger,
Áron Szabó
Abstract:
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable desig…
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Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.
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Submitted 26 October, 2023;
originally announced October 2023.
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Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
Authors:
Áron Szabó Cedric Klinkert,
Davide Campi,
Christian Stieger,
Nicola Marzari,
Mathieu Luisier
Abstract:
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors…
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Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet; this paper pinpoints some of the most promising candidates among them to realize highly efficient TFETs. SL SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100μA/μm at 0.5-V supply voltage and 0.1 nA/μm OFF-current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing bandgap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best SL homojunction, paving the way for research in optimal 2-D material combinations.
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Submitted 8 December, 2020;
originally announced December 2020.
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2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
Authors:
Cedric Klinkert,
Áron Szabó,
Christian Stieger,
Davide Campi,
Nicola Marzari,
Mathieu Luisier
Abstract:
Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more tha…
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Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal dichalcogenides, are still far from delivering the expected performance. Based on a recent theoretical study that predicts the existence of more than 1,800 exfoliable 2-D materials, we investigate here the 100 most promising contenders for logic applications. Their "current vs. voltage" characteristics are simulated from first-principles, combining density-functional theory and advanced quantum transport calculations. Both n- and p-type configurations are considered, with gate lengths ranging from 15 down to 5 nm. From this unprecedented collection of electronic materials, we identify 13 compounds with electron and hole currents potentially much higher than in future Si FinFETs. The resulting database widely expands the design space of 2-D transistors and provides original guidelines to the materials and device engineering community.
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Submitted 9 April, 2020;
originally announced April 2020.
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Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
Authors:
Christian Stieger,
Aron Szabo,
Teute Bunjaku,
Mathieu Luisier
Abstract:
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on t…
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Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which has a direct influence on the increase of their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides.
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Submitted 5 December, 2018;
originally announced December 2018.
