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Nanoscale single-electron box with a floating lead for quantum sensing: modelling and device characterization
Authors:
Nikolaos Petropoulos,
Xutong Wu,
Andrii Sokolov,
Panagiotis Giounanlis,
Imran Bashir,
Mike Asker,
Dirk Leipold,
Andrew K. Mitchell,
Robert B. Staszewski,
Elena Blokhina
Abstract:
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically empl…
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We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron charge-sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for sensing and precise injection of electrons into an electrostatically formed QD. To analyse the SEB, we propose an extended multi-orbital Anderson impurity model (MOAIM), adapted to our nanoscale SEB system, that is used to predict theoretically the behaviour of the SEB in the context of a charge-sensing application. The validation of the model and the sensing technique has been carried out on a QD fabricated in a fully depleted silicon on insulator (FDSOI) process on a 22-nm technological node. We demonstrate the MOAIM's efficacy in predicting the observed electronic behavior and elucidating the complex electron dynamics and correlations in the SEB. The results of our study reinforce the versatility and precision of the model in the realm of nanoelectronics and highlight the practical utility of the metallic floating node as a mechanism for charge injection and detection in integrated QDs. Finally, we identify the limitations of our model in capturing higher-order effects observed in our measurements and propose future outlooks to reconcile some of these discrepancies.
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Submitted 23 April, 2024;
originally announced April 2024.
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Simulation Methodology for Electron Transfer in CMOS Quantum Dots
Authors:
Andrii Sokolov,
Dmytro Mishagli,
Panagiotis Giounanlis,
Imran Bashir,
Dirk Leipold,
Eugene Koskin,
R. Bogdan Staszewski,
Elena Blokhina
Abstract:
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor…
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The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.
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Submitted 24 June, 2020;
originally announced June 2020.
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CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
Authors:
Elena Blokhina,
Panagiotis Giounanlis,
Andrew Mitchell,
Dirk Leipold,
Robert Bogdan Staszewski
Abstract:
In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubi…
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In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.
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Submitted 24 December, 2019;
originally announced December 2019.
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Towards quantum internet and non-local communication in position based qubits
Authors:
Krzysztof Pomorski,
Robert Bogdan Staszewski
Abstract:
Non-local communication among position based qubits is described for the system of the quantum electromagnetic resonator entangled to two semiconductor electrostatic qubits via interaction between matter and radiation by Jaynes-Cummings tight-binding Hamiltonian. Principle of quantum communication between position dependent qubits is explained with usage of simplistic model. All stages of derivati…
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Non-local communication among position based qubits is described for the system of the quantum electromagnetic resonator entangled to two semiconductor electrostatic qubits via interaction between matter and radiation by Jaynes-Cummings tight-binding Hamiltonian. Principle of quantum communication between position dependent qubits is explained with usage of simplistic model. All stages of derivation are presented. The case of two semiconductor position-dependent qubits interacting with quantum electromagnetic cavity is discussed and general form of tight-binding Hamiltonian is derived with renormalized tight-binding coefficients. The obtained results bring foundation for the construction of quantum networks and prospect of quantum internet. The presented work brings the perspective of creation of quantum communication networks between electrostatic position based qubits that are implementable in semiconductor single electron devices and in particular in current CMOS technologies. The case of two capacitively interacting qubits biased to quantum electromagnetic cavity is also described.
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Submitted 20 November, 2019; v1 submitted 3 November, 2019;
originally announced November 2019.
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Analytical Solutions for N-Electron Interacting System Confined in Graph of Coupled Electrostatic Semiconductor and Superconducting Quantum Dots in Tight-Binding Model with Focus on Quantum Information Processing
Authors:
Krzysztof Pomorski,
Robert Bogdan Staszewski
Abstract:
Analytical solutions for a tight-binding model are presented for a position-based qubit and N interacting qubits realized by quasi-one-dimensional network of coupled quantum dots expressed by connected or disconnected graphs of any topology in 2 and 3 dimensions where one electron is presented at each separated graphs. Electron(s) quantum dynamic state is described under various electromagnetic ci…
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Analytical solutions for a tight-binding model are presented for a position-based qubit and N interacting qubits realized by quasi-one-dimensional network of coupled quantum dots expressed by connected or disconnected graphs of any topology in 2 and 3 dimensions where one electron is presented at each separated graphs. Electron(s) quantum dynamic state is described under various electromagnetic circumstances with an omission spin degree-of-freedom. The action of Hadamard and phase rotating gate is given by analytical formulas derived and formulated for any case of physical field evolution preserving the occupancy of two-energy level system. The procedure for heating up and cooling down of the quantum state placed in position based qubit is described. The interaction of position-based qubit with electromagnetic cavity is described. In particular non-local communication between position based qubits is given. It opens the perspective of implementation of quantum internet among electrostatic CMOS quantum computers (quantum chips). The interface between superconducting Josephson junction and semiconductor position-based qubit implemented in coupled semiconductor q-dots is described such that it can be the base for electrostatic interface between superconducting and semiconductor quantum computer. Modification of Andreev Bound State in Josephson junction by the presence of semiconductor qubit in its proximity and electrostatic interaction with superconducting qubit is spotted by the minimalistic tight-binding model. The obtained results allow in creating interface between semiconductor quantum computer and superconducting quantum computer. They open the perspective of construction of QISKIT like software that will describe both types of quantum computers as well as their interface.
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Submitted 22 October, 2019; v1 submitted 6 July, 2019;
originally announced July 2019.
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Properties of Coupled Single-Electron Lines
Authors:
Krzysztof Pomorski,
Panagiotis Giounanlis,
Elena Blokhina,
Imran Bashir,
Dirk Leipold,
Robert Bogdan Staszewski
Abstract:
Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference…
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Fundamental properties of two electrostatically interacting single-electron lines (SEL) are determined from a minimalistic tight-binding model. The lines are represented by a chain of coupled quantum wells that could be implemented in a mainstream nanoscale CMOS process technology and tuned electrostatically by DC or AC voltage biases. The obtained results show an essential qualitative difference with two capacitively coupled classical electrical lines. The derived equations and their solutions prove that the two coupled SET lines can create an entanglement between electrons. The results indicate a possibility of constructing electrostatic (non-spin) coupled qubits that could be used as building blocks in a CMOS quantum computer.
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Submitted 9 May, 2019; v1 submitted 14 April, 2019;
originally announced April 2019.
