Showing 1–7 of 7 results for author: Sopiha, K V

Experimental and theoretical study of stable and metastable phases in sputtered CuInS${_2}$

Authors: Jes K. Larsen, Kostiantyn V. Sopiha, Clas Persson, Charlotte Platzer-Björkman, Marika Edoff

Abstract: The chalcopyrite Cu(In,Ga)S${_2}$ has gained renewed interest in recent years due to the potential application in tandem solar cells. In this contribution, a combined theoretical and experimental approach is applied to investigate stable and metastable phases forming in CuInS${_2}$ (CIS) thin films. Ab initio calculations are performed to obtain formation energies, X-ray diffraction patterns, and… ▽ More The chalcopyrite Cu(In,Ga)S${_2}$ has gained renewed interest in recent years due to the potential application in tandem solar cells. In this contribution, a combined theoretical and experimental approach is applied to investigate stable and metastable phases forming in CuInS${_2}$ (CIS) thin films. Ab initio calculations are performed to obtain formation energies, X-ray diffraction patterns, and Raman spectra of CIS polytypes and related compounds. Multiple CIS structures with zinc-blende and wurtzite-derived lattices are identified and their XRD/Raman patterns are shown to contain overlap** features, which could lead to misidentification. Thin films with compositions from Cu-rich to Cu-poor are synthesized with a two-step approach based on sputtering from binary targets followed by high-temperature sulfurization. It is discovered that several CIS polymorphs are formed when growing the material with this approach. In the Cu-poor material, wurtzite CIS is observed for the first time in sputtered thin films along with chalcopyrite CIS and CuAu-ordered CIS. Once the wurtzite CIS phase has formed, it is difficult to convert into the stable chalcopyrite polymorph. CuIn${_5}$S${_8}$ and NaInS${_2}$ accommodating In-excess are found alongside the CIS polymorphs. It is argued that the metastable polymorphs are stabilized by off-stoichiometry of the precursors, hence tight composition control is required. △ Less

Submitted 7 June, 2022; originally announced June 2022.

First-Principles Map** of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics

Authors: Kostiantyn V. Sopiha, Oleksandr I. Malyi, Clas Persson

Abstract: Herein, we demonstrate that first-principles calculations can be used for map** electronic properties of two-dimensional (2d) materials with respect to non-uniform strain. By investigating four representative single-layer 2d compounds with different symmetries and bonding characters, namely 2d-${MoS_2}$, phosphorene, $α$-Te, and $β$-Te, we reveal that such a map** can be an effective guidance… ▽ More Herein, we demonstrate that first-principles calculations can be used for map** electronic properties of two-dimensional (2d) materials with respect to non-uniform strain. By investigating four representative single-layer 2d compounds with different symmetries and bonding characters, namely 2d-${MoS_2}$, phosphorene, $α$-Te, and $β$-Te, we reveal that such a map** can be an effective guidance for advanced strain engineering and development of strain-tunable nanoelectronics devices, including transistors, sensors, and photodetectors. Thus, we show that $α$-Te and $β$-Te are considerably more elastic compared to the 2d compounds with strong chemical bonding. In case of $β$-Te, the map** uncovers an existence of curious regimes where non-uniform deformations allow to achieve unique localization of band edges in momentum space that cannot be realized under either uniform or uniaxial deformations. For all other systems, the strain map** is shown to provide deeper insight into the known trends of band gap modulation and direct-indirect transitions under strain. Hence, we prove that the standard way of analyzing selected strain directions is insufficient for some 2d systems, and a more general map** strategy should be employed instead. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Energy, phonon, and dynamic stability criteria of 2d materials

Authors: Oleksandr I. Malyi, Kostiantyn V. Sopiha, Clas Persson

Abstract: First-principles calculations have become a powerful tool to exclude the Edisonian approach in search of novel 2d materials. However, no universal first-principles criteria to examine the realizability of hypothetical 2d materials have been established in the literature yet. Because of this, and since the calculations are always performed in an artificial simulation environment, one can unintentio… ▽ More First-principles calculations have become a powerful tool to exclude the Edisonian approach in search of novel 2d materials. However, no universal first-principles criteria to examine the realizability of hypothetical 2d materials have been established in the literature yet. Because of this, and since the calculations are always performed in an artificial simulation environment, one can unintentionally study compounds that do not exist in the experiments. Although investigations of physics and chemistry of unrealizable materials can provide some fundamental knowledge, the discussion of their applications can mislead experimentalists for years and increase the gap between experimental and theoretical research. By analyzing energy convex hull, phonon spectra, and structure evolution during ab initio molecular dynamics simulations for a range of synthesized and recently proposed 2d materials, we construct energy, phonon, and dynamic stability filters which need to be satisfied before proposing novel 2d compounds. We demonstrate the power of the suggested filters for several selected 2d systems, revealing that some of them cannot be ever realized experimentally. △ Less

Submitted 28 January, 2019; v1 submitted 22 January, 2019; originally announced January 2019.

Comments: 13 pages, 6 figures

Noble gas as a functional dopant in ZnO

Authors: Oleksandr I. Malyi, Kostiantyn V. Sopiha, Clas Persson

Abstract: Owing to fully occupied orbitals, noble gases are considered to be chemically inert and to have limited effect on materials properties under standard conditions. However, using first-principles calculations, we demonstrate herein that the insertion of noble gas (i.e., He, Ne, or Ar) in ZnO results in local destabilization of electron density of the material driven by minimization of an unfavorable… ▽ More Owing to fully occupied orbitals, noble gases are considered to be chemically inert and to have limited effect on materials properties under standard conditions. However, using first-principles calculations, we demonstrate herein that the insertion of noble gas (i.e., He, Ne, or Ar) in ZnO results in local destabilization of electron density of the material driven by minimization of an unfavorable overlap of atomic orbitals of the noble gas and its surrounding atoms. Specifically, the noble gas defect (interstitial or substitutional) in ZnO pushes the electron density of its surrounding atoms away from the defect. Simultaneously, the host material confines the electron density of the noble gas. As a consequence, the interaction of He, Ne, or Ar with O vacancies of ZnO in different charge states q (ZnO:VOq) affects the vacancy stability and their electronic structures. Remarkably, we find that the noble gas is a functional dopant that can delocalize the deep in-gap VOq states and lift electrons associated with the vacancy to the conduction band. △ Less

Submitted 20 February, 2019; v1 submitted 1 January, 2019; originally announced January 2019.

Comments: 15 pages, 4 figures

Suppression of Surfaces States at Cubic Perovskite (001) Surfaces by CO${_2}$ Adsorption

Authors: Kostiantyn V. Sopiha, Oleksandr I. Malyi, Clas Persson, ** Wu

Abstract: By using first-principles approach, the interaction of CO${_2}$ with (001) surfaces of six cubic ABO${_3}$ perovskites (A = Ba, Sr and B = Ti, Zr, Hf) is studied in detail. We show that CO${_2}$ adsorption results in the formation of highly stable CO${_3}$-like complexes with similar geometries for all investigated compounds. This reaction leads to the suppression of the surfaces states, opening t… ▽ More By using first-principles approach, the interaction of CO${_2}$ with (001) surfaces of six cubic ABO${_3}$ perovskites (A = Ba, Sr and B = Ti, Zr, Hf) is studied in detail. We show that CO${_2}$ adsorption results in the formation of highly stable CO${_3}$-like complexes with similar geometries for all investigated compounds. This reaction leads to the suppression of the surfaces states, opening the band gaps of the slab systems up to the corresponding bulk energy limits. For most AO-terminated ABO${_3}$(001) perovskite surfaces, a CO${_2}$ coverage of 0.25 was found to be sufficient to fully suppress the surface states, whereas the same effect can only be achieved at 0.50 CO${_2}$ coverage for the BO${_2}$ terminations. The largest band gap modulation among the AO-terminated surfaces was found for SrHfO${_3}$(001) and BaHfO${_3}$(001), whereas the most profound effect among the BO${_2}$ terminations was identified for SrTiO${_3}$(001) and BaTiO${_3}$(001). Based on these results and considering practical difficulties associated with measuring conductivity of highly resistive materials, TiO${_2}$-terminated SrTiO${_3}$(001) and BaTiO${_3}$(001) were identified as the most prospective candidates for chemiresistive CO${_2}$ sensing applications. △ Less

Submitted 25 June, 2018; originally announced June 2018.

Tailoring electronic properties of multilayer phosphorene by siliconization

Authors: Oleksandr I. Malyi, Kostiantyn V. Sopiha, Ihor Radchenko, ** Wu, Clas Persson

Abstract: Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our an… ▽ More Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our analysis demonstrates that these systems are semiconductors with band gap energies that can be governed by varying the thickness and stacking order. Specifically, siliconization of phosphorene allows to design 2d-SiP$_x$ materials with significantly weaker thickness dependence of electronic properties than that in 2d-P and to develop ways for their tailoring. We also reveal the spatial dependence of electronic properties for 2d-SiP$_x$ highlighting difference in effective band gaps for different layers. Particularly, our results show that central layers in the multilayer 2d systems determine overall electronic properties, while the role of the outermost layers is noticeably smaller. △ Less

Submitted 4 December, 2017; v1 submitted 22 October, 2017; originally announced October 2017.

Band Gap Modulation of SrTiO3 upon CO2 Adsorption

Authors: Kostiantyn V. Sopiha, Oleksandr I. Malyi, Clas Persson, ** Wu

Abstract: CO2 chemisorption on SrTiO3(001) surfaces is studied using ab initio calculations in order to establish new chemical sensing mechanisms. We find that CO2 adsorption opens the material band gap, however, while the adsorption on the TiO2-terminated surface neutralizes surface states at the valence band (VB) maximum, CO2 on the SrO-terminated surfaces suppresses the conduction band (CB) minimum. For… ▽ More CO2 chemisorption on SrTiO3(001) surfaces is studied using ab initio calculations in order to establish new chemical sensing mechanisms. We find that CO2 adsorption opens the material band gap, however, while the adsorption on the TiO2-terminated surface neutralizes surface states at the valence band (VB) maximum, CO2 on the SrO-terminated surfaces suppresses the conduction band (CB) minimum. For the TiO2-terminated surface, the effect is explained by the passivation of dangling bonds, whereas for the SrO-terminated surface, the suppression is caused by the surface relaxation. Modulation of the VB states implies a more direct change in charge distribution, and thus the induced change in band gap is more prominent at the TiO2 termination. Further, we show that both CO2 adsorption energy and surface band gap are strongly dependent on CO2 coverage, suggesting that the observed effect can be utilized for sensing application in a wide range of CO2 concentrations. △ Less

Submitted 15 May, 2017; originally announced May 2017.