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Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
Authors:
Cori Haws,
Biswarup Guha,
Edgar Perez,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation ac…
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Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$μ$m x 80$μ$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.
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Submitted 10 February, 2022;
originally announced February 2022.
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Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector
Authors:
Cori Haws,
Edgar Perez,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communicati…
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To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.
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Submitted 14 December, 2021;
originally announced December 2021.
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Coherence in Cooperative Photon Emission from Indistinguishable Quantum Emitters
Authors:
Zhe Xian Koong,
Moritz Cygorek,
Eleanor Scerri,
Ted S. Santana,
Suk-In Park,
** Dong Song,
Erik M. Gauger,
Brian D. Gerardot
Abstract:
Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity corre…
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Photon-mediated interactions between atomic systems can arise via coupling to a common electromagnetic mode or by quantum interference. Here, we probe the role of coherence in cooperative emission arising from two distant but indistinguishable solid-state emitters because of path erasure. The primary signature of cooperative emission, the emergence of "bunching" at zero delay in an intensity correlation experiment, is used to characterise the indistinguishability of the emitters, their dephasing, and the degree of correlation in the joint system that can be coherently controlled. In a stark departure from a pair of uncorrelated emitters, in Hong-Ou-Mandel type interference measurements we observe photon statistics from a pair of indistinguishable emitters resembling that of a weak coherent state from an attenuated laser. Our experiments establish techniques to control and characterize cooperative behavior between matter qubits using the full quantum optics toolbox, a key step toward realizing large-scale quantum photonic networks.
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Submitted 19 March, 2022; v1 submitted 19 May, 2021;
originally announced May 2021.
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A Bright Source of Telecom Single Photons Based on Quantum Frequency Conversion
Authors:
Christopher L. Morrison,
Markus Rambach,
Zhe Xian Koong,
Francesco Graffitti,
Fiona Thorburn,
Ajoy K. Kar,
Yong Ma,
Suk-In Park,
** Dong Song,
Nick G. Stoltz,
Dirk Bouwmeester,
Alessandro Fedrizzi,
Brian D. Gerardot
Abstract:
On-demand indistinguishable single photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the most promising candidates, but their typical emission wavelength renders them unsuitable for use in fibre networks. Here, we present quantum frequency conversion of near-infrared photons from a bright quantum dot to the telecommunication C-band, allowin…
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On-demand indistinguishable single photon sources are essential for quantum networking and communication. Semiconductor quantum dots are among the most promising candidates, but their typical emission wavelength renders them unsuitable for use in fibre networks. Here, we present quantum frequency conversion of near-infrared photons from a bright quantum dot to the telecommunication C-band, allowing integration with existing fibre architectures. We use a custom-built, tunable 2400 nm seed laser to convert single photons from 942 nm to 1550 nm in a difference frequency generation process. We achieve an end-to-end conversion efficiency of $\sim$35%, demonstrate count rates approaching 1 MHz at 1550 nm with $g^{\left(2\right)}\left(0\right) = 0.04$, and achieve Hong-Ou-Mandel visibilities of 60%. We expect this scheme to be preferable to quantum dot sources directly emitting at telecom wavelengths for fibre based quantum networking.
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Submitted 27 January, 2021;
originally announced January 2021.
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Coherent Dynamics in Quantum Emitters under Dichromatic Excitation
Authors:
Z. X. Koong,
E. Scerri,
M. Rambach,
M. Cygorek,
M. Brotons-Gisbert,
R. Picard,
Y. Ma,
S. I. Park,
J. D. Song,
E. M. Gauger,
B. D. Gerardot
Abstract:
We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exci…
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We characterize the coherent dynamics of a two-level quantum emitter driven by a pair of symmetrically-detuned phase-locked pulses. The promise of dichromatic excitation is to spectrally isolate the excitation laser from the quantum emission, enabling background-free photon extraction from the emitter. Paradoxically, we find that excitation is not possible without spectral overlap between the exciting pulse and the quantum emitter transition for ideal two-level systems due to cancellation of the accumulated pulse area. However, any additional interactions that interfere with cancellation of the accumulated pulse area may lead to a finite stationary population inversion. Our spectroscopic results of a solid-state two-level system show that while coupling to lattice vibrations helps to improve the inversion efficiency up to 50\% under symmetric driving, coherent population control and a larger amount of inversion are possible using asymmetric dichromatic excitation, which we achieve by adjusting the ratio of the intensities between the red and blue-detuned pulses. Our measured results, supported by simulations using a real-time path-integral method, offer a new perspective towards realising efficient, background-free photon generation and extraction.
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Submitted 4 September, 2020;
originally announced September 2020.
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Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices
Authors:
Oliver J. Trojak,
Sean Gorsky,
Connor Murray,
Fabrizio Sgrignuoli,
Felipe Arruda Pinheiro,
Suk-In Park,
** Dong Song,
Luca Dal Negro,
Luca Sapienza
Abstract:
Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial…
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Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201+/-443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions: we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for the further development of classical and quantum active devices on a chip.
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Submitted 18 January, 2020;
originally announced January 2020.
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Observation of a partially rotating superfluid of exciton-polariton
Authors:
Daegwang Choi,
Min Park,
Byoung Yong Oh,
Min-Sik Kwon,
Suk In Park,
Sooseok Kang,
** Dong Song,
Yong-Hoon Cho,
Hyoungsoon Choi
Abstract:
Rotation of a container holding a viscous fluid forms a vortex which grows with increasing angular velocity. A superfluid, however, is intrinsically different from these normal fluids because its rotation is quantized. Even if a container of superfluid is rotating, the fluid itself remains still until a critical velocity is reached. Beyond the critical velocity, all the particles conspire to sudde…
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Rotation of a container holding a viscous fluid forms a vortex which grows with increasing angular velocity. A superfluid, however, is intrinsically different from these normal fluids because its rotation is quantized. Even if a container of superfluid is rotating, the fluid itself remains still until a critical velocity is reached. Beyond the critical velocity, all the particles conspire to suddenly pick up an angular momentum of $\hbar$ each and forms a quantized vortex. As a result, a superfluid is known to increase its rotation by a total angular momentum of $N\hbar$. In this letter, we show that exciton-polariton superfluid can split into an irrotational part and a rotational part. The relative ratio between the two states can be controlled by either pump beam's power or spot size. Consequently, angular momentum of exciton-polariton superfluid can be tuned from zero to $N\hbar$ continuously. This striking observation sets the stage for studying non-equilibrium properties of a superfluid with exciton-polaritons.
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Submitted 20 October, 2020; v1 submitted 5 September, 2019;
originally announced September 2019.
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Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits
Authors:
Peter Schnauber,
Anshuman Singh,
Johannes Schall,
Suk In Park,
** Dong Song,
Sven Rodt,
Kartik Srinivasan,
Stephan Reitzenstein,
Marcelo Davanco
Abstract:
Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and netwo…
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Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.
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Submitted 28 May, 2019;
originally announced May 2019.
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Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions
Authors:
Zhe-Xian Koong,
Dale Scerri,
Markus Rambach,
Ted S. Santana,
Suk-In Park,
** D. Song,
Erik M. Gauger,
Brian D. Gerardot
Abstract:
Coherent generation of indistinguishable single photons is crucial for many quantum communication and processing protocols. Solid-state realizations of two-level atomic transitions or three-level spin-$Λ$ systems offer significant advantages over their atomic counterparts for this purpose, albeit decoherence can arise due to environmental couplings. One popular approach to mitigate dephasing is to…
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Coherent generation of indistinguishable single photons is crucial for many quantum communication and processing protocols. Solid-state realizations of two-level atomic transitions or three-level spin-$Λ$ systems offer significant advantages over their atomic counterparts for this purpose, albeit decoherence can arise due to environmental couplings. One popular approach to mitigate dephasing is to operate in the weak excitation limit, where excited state population is minimal and coherently scattered photons dominate over incoherent emission. Here we probe the coherence of photons produced using two-level and spin-$Λ$ solid-state systems. We observe that the coupling of the atomic-like transitions to the vibronic transitions of the crystal lattice is independent of driving strength and detuning. We apply a polaron master equation to capture the non-Markovian dynamics of the ground state vibrational manifolds. These results provide insight into the fundamental limitations for photon coherence from solid-state quantum emitters, with the consequence that deterministic single-shot quantum protocols are impossible and inherently probabilistic approaches must be embraced.
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Submitted 30 November, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots
Authors:
Oliver Joe Trojak,
Christopher Woodhead,
Suk-In Park,
** Dong Song,
Robert James Young,
Luca Sapienza
Abstract:
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this iss…
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Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this issue, we present a device that combines a metallic nano-ring, positioned on the sample surface and centered around the emitter, and an epoxy-based super-solid immersion lens, deterministically deposited above the ring devices. We show that the combined broadband lensing effect of the nano-ring and of the super-solid immersion lens significantly increases the extraction of light emitted by single InAs/GaAs quantum dots into free space: we observe enhancements in the emitted intensity by the nano-ring of up to a factor 20 and by the super-solid immersion lens of up to a factor 10. Such cumulative enhancements allow us to measure photon fluxes approaching 1 million counts per second, from a single InAs/GaAs quantum dot in bulk. The combined broad-band enhancement in the extraction of light can be implemented with any kind of classical and quantum solid-state emitter and opens the path to the realisation of scalable bright devices. The same approach can also be implemented to improve the absorption of light, for instance for small-area broadband photo-detectors.
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Submitted 22 January, 2018;
originally announced January 2018.
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GaAs droplet quantum dots with nanometer-thin cap** layer for plasmonic applications
Authors:
Suk In Park,
Oliver Joe Trojak,
Eunhye Lee,
** Dong Song,
Jihoon Kyhm,
Ilki Han,
Jongsu Kim,
Gyu-Chul Yi,
Luca Sapienza
Abstract:
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) cap** layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic…
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We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) cap** layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
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Submitted 29 October, 2017;
originally announced October 2017.
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Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
Authors:
** Liu,
Kumarasiri Konthasinghe,
Marcelo Davanco,
John Lawall,
Vikas Anant,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
** Dong Song,
Ben Ma,
Ze Sheng Chen,
Hai Qiao Ni,
Zhi Chuan Niu,
Kartik Srinivasan
Abstract:
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optic…
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Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.
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Submitted 26 October, 2017;
originally announced October 2017.
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Direct Transfer of Light's Orbital Angular Momentum onto Non-resonantly Excited Polariton Superfluid
Authors:
Byoung Yong Oh,
Min-Sik Kwon,
Su-Hyun Gong,
Je-Hyung Kim,
Hang Kyu Kang,
Sooseok Kang,
** Dong Song,
Hyoungsoon Choi,
Yong-Hoon Cho
Abstract:
Recently, exciton-polaritons in a semiconductor microcavity were found to condense into a coherent ground state much like a Bose-Einstein condensate and a superfluid. They have become a unique testbed for generating and manipulating quantum vortices in a driven-dissipative superfluid. Here, we generate exciton-polariton condensate with non-resonant Laguerre-Gaussian (LG) optical beam and verify th…
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Recently, exciton-polaritons in a semiconductor microcavity were found to condense into a coherent ground state much like a Bose-Einstein condensate and a superfluid. They have become a unique testbed for generating and manipulating quantum vortices in a driven-dissipative superfluid. Here, we generate exciton-polariton condensate with non-resonant Laguerre-Gaussian (LG) optical beam and verify the direct transfer of light's orbital angular momentum to exciton-polariton quantum fluid. Quantized vortices are found in spite of large energy relaxation involved in non-resonant pum**. We identified phase singularity, density distribution and energy eigenstates for the vortex states. Our observations confirm that non-resonant optical LG beam can be used to manipulate chirality, topological charge, and stability of non-equilibrium quantum fluid. These vortices are quite robust, only sensitive to the OAM of light and not other parameters such as energy, intensity, size or shape of the pump beam. Therefore, optical information can be transferred between photon and exciton-polariton with ease and the technique is potentially useful to form the controllable network of multiple topological charges even in the presence of spectral randomness in solid state system.
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Submitted 8 November, 2018; v1 submitted 24 August, 2017;
originally announced August 2017.
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Ferroelectricity of structural origin in spin-chain compounds Ca$_3$Co$_{2-x}$Mn$_x$O$_6$
Authors:
J. Shi,
J. D. Song,
J. C. Wu,
X. Rao,
H. L. Che,
Z. Y. Zhao,
H. D. Zhou,
J. Ma,
R. R. Zhang,
L. Zhang,
X. G. Liu,
X. Zhao,
X. F. Sun
Abstract:
We report a systematic study of the structure, electric and magnetic properties of Ca$_3$Co$_{2-x}$Mn$_x$O$_6$ single crystals with $x =$ 0.72 and 0.26. The DC and AC magnetic susceptibilities display anomalies with characteristic of the spin freezing. The crystals show ferroelectric transition at 40 K and 35 K ($T_{FE}$) for $x =$ 0.72 and 0.26, respectively, with a large value of 1400 $μ$C/m…
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We report a systematic study of the structure, electric and magnetic properties of Ca$_3$Co$_{2-x}$Mn$_x$O$_6$ single crystals with $x =$ 0.72 and 0.26. The DC and AC magnetic susceptibilities display anomalies with characteristic of the spin freezing. The crystals show ferroelectric transition at 40 K and 35 K ($T_{FE}$) for $x =$ 0.72 and 0.26, respectively, with a large value of 1400 $μ$C/m$^2$ at 8 K for electric polarization ($P_c$) along the spin-chain ($c$-axis) direction. Interestingly, the electric polarization perpendicular to the chain direction ($P_{ab}$) can also be detected and has value of 450 and 500 $μ$C/m$^2$ at 8 K for the $x =$ 0.72 and 0.26 samples, respectively. The specific heat and magnetic susceptibility show no anomaly around $T_{FE}$, which means that the electric polarization of these samples has no direct relationship with the magnetism. The X-ray diffraction and the Raman spectroscopy indicate that these samples may undergo Jahn-Teller distortions that could be the reason of electric polarization.
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Submitted 9 August, 2017;
originally announced August 2017.
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Low-temperature heat transport of CuFe$_{1-x}$Ga$_x$O$_2$ ($x =$ 0--0.12) single crystals
Authors:
J. D. Song,
X. M. Wang,
Z. Y. Zhao,
J. C. Wu,
J. Y. Zhao,
X. G. Liu,
X. Zhao,
X. F. Sun
Abstract:
We report a study on the thermal conductivity of CuFe$_{1-x}$Ga$_x$O$_2$ ($x =$ 0--0.12) single crystals at temperatures down to 0.3 K and in magnetic fields up to 14 T. CuFeO$_2$ is a well-known geometrically frustrated triangular lattice antiferromagnet and can be made to display multiferroicity either by applying magnetic field along the $c$ axis or by do** nonmagnetic impurities, accompanied…
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We report a study on the thermal conductivity of CuFe$_{1-x}$Ga$_x$O$_2$ ($x =$ 0--0.12) single crystals at temperatures down to 0.3 K and in magnetic fields up to 14 T. CuFeO$_2$ is a well-known geometrically frustrated triangular lattice antiferromagnet and can be made to display multiferroicity either by applying magnetic field along the $c$ axis or by do** nonmagnetic impurities, accompanied with rich behaviors of magnetic phase transitions. The main experimental findings of this work are: (i) the thermal conductivities ($κ_a$ and $κ_c$) show drastic anomalies at temperature- or field-induced magnetic transitions; (ii) the low-$T$ $κ(H)$ isotherms exhibit irreversibility in a broad region of magnetic fields; (iii) there are phonon scattering effect caused by magnetic fluctuations at very low temperatures. These results demonstrate strong spin-phonon coupling in this material and reveal the non-negligible magnetic fluctuations in the "ground state" of pure and Ga-doped samples.
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Submitted 30 May, 2017;
originally announced May 2017.
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Metallic nanorings for broadband, enhanced extraction of light from solid-state emitters
Authors:
Oliver J. Trojak,
Suk In Park,
** Dong Song,
Luca Sapienza
Abstract:
We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as hi…
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We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as high as a factor 20. Such a device is intrinsically broadband and therefore compatible with any kind of solid-state light source. We foresee the fabrication of metallic rings via scalable techniques, like nano-imprint, and their implementation to improve the emission of classical and quantum light from solid-state sources. Furthermore, while increasing the brightness of the devices, the metallic rings can also act as top contacts for the local application of electric fields for carrier injection or wavelength tuning.
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Submitted 25 April, 2017;
originally announced April 2017.
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Experimental triple-slit interference in a strongly-driven V-type artificial atom
Authors:
Adetunmise C. Dada,
Ted S. Santana,
Antonios Koutroumanis,
Yong Ma,
Suk-In Park,
** D. Song,
Brian D. Gerardot
Abstract:
Rabi oscillations of a two-level atom appear as a quantum interference effect between the amplitudes associated to atomic superpositions, in analogy with the classic double-slit experiment which manifests a sinusoidal interference pattern. By extension, through direct detection of time-resolved resonance fluorescence from a quantum-dot neutral exciton driven in the Rabi regime, we experimentally d…
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Rabi oscillations of a two-level atom appear as a quantum interference effect between the amplitudes associated to atomic superpositions, in analogy with the classic double-slit experiment which manifests a sinusoidal interference pattern. By extension, through direct detection of time-resolved resonance fluorescence from a quantum-dot neutral exciton driven in the Rabi regime, we experimentally demonstrate triple-slit-type quantum interference via quantum erasure in a V-type three-level artificial atom. This result is of fundamental interest in the experimental studies of the properties of V-type 3-level systems and may pave the way for further insight into their coherence properties as well as applications for quantum information schemes. It also suggests quantum dots as candidates for multi-path-interference experiments for probing foundational concepts in quantum physics.
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Submitted 1 August, 2017; v1 submitted 7 March, 2017;
originally announced March 2017.
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Indistinguishable and efficient single photons from a quantum dot in a planar nanobeam waveguide
Authors:
Gabija Kiršanskė,
Henri Thyrrestrup,
Raphaël S. Daveau,
Chris L. Dreeßen,
Tommaso Pregnolato,
Leonardo Midolo,
Petru Tighineanu,
Alisa Javadi,
Søren Stobbe,
Rüdiger Schott,
Arne Ludwig,
Andreas D. Wieck,
Suk In Park,
** D. Song,
Andreas V. Kuhlmann,
Immo Söllner,
Matthias C. Löbl,
Richard J. Warburton,
Peter Lodahl
Abstract:
We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a sin…
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We demonstrate a high-purity source of indistinguishable single photons using a quantum dot embedded in a nanophotonic waveguide. The source features a near-unity internal coupling efficiency and the collected photons are efficiently coupled off-chip by implementing a taper that adiabatically couples the photons to an optical fiber. By quasi-resonant excitation of the quantum dot, we measure a single-photon purity larger than 99.4% and a photon indistinguishability of up to 94+-1% by using p-shell excitation combined with spectral filtering to reduce photon jitter. A temperature-dependent study allows pinpointing the residual decoherence processes notably the effect of phonon broadening. Strict resonant excitation is implemented as well as another mean of suppressing photon jitter, and the additional complexity of suppressing the excitation laser source is addressed. The study opens a clear pathway towards the long-standing goal of a fully deterministic source of indistinguishable photons, which is integrated on a planar photonic chip.
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Submitted 3 October, 2017; v1 submitted 27 January, 2017;
originally announced January 2017.
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Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters
Authors:
** Liu,
Macelo Davanco,
Luca Sapienza,
Kumarasiri Konthasinghe,
Jose Vinicius De Miranda Cardoso,
** Dong Song,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locati…
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We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.
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Submitted 21 December, 2016;
originally announced December 2016.
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Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Authors:
Luca Sapienza,
** Liu,
** Dong Song,
Stefan Falt,
Werner Wegscheider,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane…
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We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.
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Submitted 6 December, 2016;
originally announced December 2016.
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Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide
Authors:
Raphaël S. Daveau,
Krishna C. Balram,
Tommaso Pregnolato,
** Liu,
Eun H. Lee,
** D. Song,
Varun Verma,
Richard Mirin,
Sae Woo Nam,
Leonardo Midolo,
Søren Stobbe,
Kartik Srinivasan,
Peter Lodahl
Abstract:
Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupl…
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Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % $\pm$ 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources.
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Submitted 27 October, 2016;
originally announced October 2016.
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Heat switch effect in an antiferromagnetic insulator Co$_3$V$_2$O$_8$
Authors:
X. Zhao,
J. C. Wu,
Z. Y. Zhao,
Z. Z. He,
J. D. Song,
J. Y. Zhao,
X. G. Liu,
X. F. Sun,
X. G. Li
Abstract:
We report a heat switch effect in single crystals of an antiferromagnet Co$_3$V$_2$O$_8$, that is, the thermal conductivity ($κ$) can be changed with magnetic field in an extremely large scale. Due to successive magnetic phase transitions at 12--6 K, the zero-field $κ(T)$ displays a deep minimum at 6.7 K and rather small magnitude at low temperatures. Both the temperature and field dependencies of…
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We report a heat switch effect in single crystals of an antiferromagnet Co$_3$V$_2$O$_8$, that is, the thermal conductivity ($κ$) can be changed with magnetic field in an extremely large scale. Due to successive magnetic phase transitions at 12--6 K, the zero-field $κ(T)$ displays a deep minimum at 6.7 K and rather small magnitude at low temperatures. Both the temperature and field dependencies of $κ$ demonstrate that the phonons are strongly scattered at the regime of magnetic phase transitions. Magnetic field can suppress magnetic scattering effect and significantly recover the phonon thermal conductivity. In particular, a 14 T field along the $a$ axis increases the $κ$ at 7.5 K up to 100 times. For $H \parallel c$, the magnitude of $κ$ can be suppressed down to $\sim$ 8% at some field-induced transition and can be enhanced up to 20 times at 14 T. The present results demonstrate that it is possible to design a kind of heat switch in the family of magnetic materials.
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Submitted 6 June, 2016;
originally announced June 2016.
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Indistinguishable single photons with flexible electronic triggering
Authors:
Adetunmise C. Dada,
Ted S. Santana,
Ralph N. E. Malein,
Antonios Koutroumanis,
Yong Ma,
Joanna M. Zajac,
Ju Y. Lim,
** D. Song,
Brian D. Gerardot
Abstract:
A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum c…
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A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $π$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications.
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Submitted 6 May, 2016; v1 submitted 7 January, 2016;
originally announced January 2016.
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Thermal conductivity of the diamond-chain compound Cu_3(CO_3)_2(OH)_2
Authors:
J. C. Wu,
J. D. Song,
Z. Y. Zhao,
J. Shi,
H. S. Xu,
J. Y. Zhao,
X. G. Liu,
X. Zhao,
X. F. Sun
Abstract:
Thermal conductivity (κ) of a distorted spin diamond-chain system, Cu_3(CO_3)_2(OH)_2, is studied at low temperatures down to 0.3 K and in magnetic fields up to 14 T. In zero field, the κ(T) curve with heat current along the chain direction has very small magnitudes and shows a pronounced three-peak structure. The magnetic fields along and perpendicular to the chains change the κstrongly in a way…
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Thermal conductivity (κ) of a distorted spin diamond-chain system, Cu_3(CO_3)_2(OH)_2, is studied at low temperatures down to 0.3 K and in magnetic fields up to 14 T. In zero field, the κ(T) curve with heat current along the chain direction has very small magnitudes and shows a pronounced three-peak structure. The magnetic fields along and perpendicular to the chains change the κstrongly in a way having good correspondence to the changes of magnetic specific heat in fields. The data analysis based on the Debye model for phononic thermal conductivity indicates that the heat transport is due to phonons and the three-peak structure is caused by two resonant scattering processes by the magnetic excitations. In particular, the spin excitations of the chain subsystem are strongly scattering phonons rather than transporting heat.
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Submitted 17 December, 2015;
originally announced December 2015.
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Screening nuclear field fluctuations in quantum dots for indistinguishable photon generation
Authors:
R. N. E. Malein,
T. S. Santana,
J. M. Zajac,
A. C. Dada,
E. M. Gauger,
P. M. Petroff,
J. Y. Lim,
J. D. Song,
B. D. Gerardot
Abstract:
A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on…
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A semiconductor quantum dot can generate highly coherent and indistinguishable single photons. However, intrinsic semiconductor dephasing mechanisms can reduce the visibility of two-photon interference. For an electron in a quantum dot, a fundamental dephasing process is the hyperfine interaction with the nuclear spin bath. Here we directly probe the consequence of the fluctuating nuclear spins on the elastic and inelastic scattered photon spectra from a resident electron in a single dot. We find the nuclear spin fluctuations lead to detuned Raman scattered photons which are distinguishable from both the elastic and incoherent components of the resonance fluorescence. This significantly reduces two-photon interference visibility. However, we demonstrate successful screening of the nuclear spin noise which enables the generation of coherent single photons that exhibit high visibility two-photon interference.
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Submitted 8 January, 2016; v1 submitted 3 September, 2015;
originally announced September 2015.
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Coherent coupling between radio frequency, optical, and acoustic waves in piezo-optomechanical circuits
Authors:
Krishna C. Balram,
Marcelo Davanco,
** Dong Song,
Kartik Srinivasan
Abstract:
The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipula…
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The interaction of optical and mechanical modes in nanoscale optomechanical systems has been widely studied for applications ranging from sensing to quantum information science. Here, we develop a platform for cavity optomechanical circuits in which localized and interacting 1550 nm photons and 2.4 GHz phonons are combined with photonic and phononic waveguides. Working in GaAs facilitates manipulation of the localized mechanical mode either with a radio frequency field through the piezo-electric effect, or optically through the strong photoelastic effect. We use this to demonstrate a novel acoustic wave interference effect, analogous to coherent population trap** in atomic systems, in which the coherent mechanical motion induced by the electrical drive can be completely cancelled out by the optically-driven motion. The ability to manipulate cavity optomechanical systems with equal facility through either photonic or phononic channels enables new device and system architectures for signal transduction between the optical, electrical, and mechanical domains.
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Submitted 6 August, 2015;
originally announced August 2015.
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Thermal conductivity of IPA-CuCl_3: Evidences of ballistic magnon transport and limited applicability of the Bose-Einstein condensation model
Authors:
Z. Y. Zhao,
B. Tong,
X. Zhao,
L. M. Chen,
J. Shi,
F. B. Zhang,
J. D. Song,
S. J. Li,
J. C. Wu,
H. S. Xu,
X. G. Liu,
X. F. Sun
Abstract:
The heat transport of the spin-gapped material (CH_3)_2CHNH_3CuCl_3 (IPA-CuCl_3), a candidate quantum magnet with Bose-Einstein condensation (BEC), is studied at ultra-low temperatures and in high magnetic fields. Due to the presence of the spin gap, the zero-field thermal conductivity (κ) is purely phononic and shows a ballistic behavior at T < 1 K. When the gap is closed by magnetic field at H =…
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The heat transport of the spin-gapped material (CH_3)_2CHNH_3CuCl_3 (IPA-CuCl_3), a candidate quantum magnet with Bose-Einstein condensation (BEC), is studied at ultra-low temperatures and in high magnetic fields. Due to the presence of the spin gap, the zero-field thermal conductivity (κ) is purely phononic and shows a ballistic behavior at T < 1 K. When the gap is closed by magnetic field at H = H_{c1}, where a long-range antiferromanetic (AF) order of Cu^{2+} moments is developed, the magnons contribute significantly to heat transport and exhibit a ballistic T^3 behavior at T < 600 mK. In addition, the low-T κ(H) isotherms show sharp peaks at H_{c1}, which indicates a gap re-opening in the AF state (H > H_{c1}) and demonstrates limited applicability of the BEC model to IPA-CuCl_3.
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Submitted 6 April, 2015;
originally announced April 2015.
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Moving boundary and photoelastic coupling in GaAs optomechanical resonators
Authors:
Krishna C. Balram,
M. Davanco,
Ju Young Lim,
** Dong Song,
K. Srinivasan
Abstract:
Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact, quantified by the coupling rate $g_{0}$. Here, we develop GaAs optomechanical resonators and investigate the moving dielectric boundary and photoelastic contribution…
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Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact, quantified by the coupling rate $g_{0}$. Here, we develop GaAs optomechanical resonators and investigate the moving dielectric boundary and photoelastic contributions to $g_{0}$. First, we consider coupling between the fundamental radial breathing mechanical mode and a 1550 nm band optical whispering gallery mode in microdisks. For decreasing disk radius from $R=5$ $μ$m to $R=1$ $μ$m, simulations and measurements show that $g_{0}$ changes from being dominated by the moving boundary contribution to having an equal photoelastic contribution. Next, we design and demonstrate nanobeam optomechanical crystals in which a $2.5$ GHz mechanical breathing mode couples to a 1550 nm optical mode predominantly through the photoelastic effect. We show a significant (30 $\%$) dependence of $g_{0}$ on the device's in-plane orientation, resulting from the difference in GaAs photoelastic coefficients along different crystalline axes, with fabricated devices exhibiting $g_{\text{0}}/2π$ as high as 1.1 MHz for orientation along the [110] axis. GaAs nanobeam optomechanical crystals are a promising system which can combine the demonstrated large optomechanical coupling strength with additional functionality, such as piezoelectric actuation and incorporation of optical gain media.
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Submitted 22 September, 2014;
originally announced September 2014.
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Low-temperature heat transport of Nd_{2-x}Ce_{x}CuO_{4} single crystals
Authors:
X. Zhao,
Z. Y. Zhao,
B. Ni,
J. C. Wu,
F. B. Zhang,
J. D. Song,
S. J. Li,
X. F. Sun,
X. G. Li
Abstract:
We report a study of the Ce do** effect on the thermal conductivity (κ) of Nd_{2-x}Ce_{x}CuO_{4} (NCCO) at low temperatures down to 0.3 K and in magnetic fields up to 14 T. It is found that with Ce do**, the electronic thermal conductivity increases; at the same time, the a-axis field induced changes in κ(H), associated with the spin flop and spin polarization of Nd^{3+} sublattice, and the sp…
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We report a study of the Ce do** effect on the thermal conductivity (κ) of Nd_{2-x}Ce_{x}CuO_{4} (NCCO) at low temperatures down to 0.3 K and in magnetic fields up to 14 T. It is found that with Ce do**, the electronic thermal conductivity increases; at the same time, the a-axis field induced changes in κ(H), associated with the spin flop and spin polarization of Nd^{3+} sublattice, and the spin flop of Cu^{2+} sublattice, gradually disappear. These are clearly due to the electron do** and the destruction of the antiferromagnetic orders. In the superconducting NCCO with x = 0.14 and 0.18, although the electronic thermal conductivity shows sizable field dependencies with H // c, the paramagnetic scattering of phonons is still playing the dominant role in the heat transport, which is different from many other cuprates. In the lightly doped samples (x = 0.03 and 0.06), the low-T κ(H) isotherms with H // c show a step-like anomaly and is likely related to the spin/charge stripes.
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Submitted 28 July, 2014;
originally announced July 2014.
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Deterministic photon-emitter coupling in chiral photonic circuits
Authors:
Immo Söllner,
Sahand Mahmoodian,
Sofie Lindskov Hansen,
Leonardo Midolo,
Alisa Javadi,
Gabija Kiršanskė,
Tommaso Pregnolato,
Haitham El-Ella,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interacti…
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The ability to engineer photon emission and photon scattering is at the heart of modern photonics applications ranging from light harvesting, through novel compact light sources, to quantum-information processing based on single photons. Nanophotonic waveguides are particularly well suited for such applications since they confine photon propagation to a 1D geometry thereby increasing the interaction between light and matter. Adding chiral functionalities to nanophotonic waveguides lead to new opportunities enabling integrated and robust quantum-photonic devices or the observation of novel topological photonic states. In a regular waveguide, a quantum emitter radiates photons in either of two directions, and photon emission and absorption are reverse processes. This symmetry is violated in nanophotonic structures where a non-transversal local electric field implies that both photon emission and scattering may become directional. Here we experimentally demonstrate that the internal state of a quantum emitter determines the chirality of single-photon emission in a specially engineered photonic-crystal waveguide. Single-photon emission into the waveguide with a directionality of more than 90\% is observed under conditions where practically all emitted photons are coupled to the waveguide. Such deterministic and highly directional photon emission enables on-chip optical diodes, circulators operating at the single-photon level, and deterministic quantum gates. Based on our experimental demonstration, we propose an experimentally achievable and fully scalable deterministic photon-photon CNOT gate, which so far has been missing in photonic quantum-information processing where most gates are probabilistic.
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Submitted 12 January, 2015; v1 submitted 17 June, 2014;
originally announced June 2014.
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Single crystal growth of the hexagonal manganites $R$MnO$_3$ ($R$ = rare earth) by the optical floating-zone method
Authors:
C. Fan,
Z. Y. Zhao,
J. D. Song,
J. C. Wu,
F. B. Zhang,
X. F. Sun
Abstract:
We report a study on the crystal growth of the hexagonal manganites $R$MnO$_3$ ($R$ = Y, Lu, Ho, Er, and Tm) by using an optical floating-zone method. It was found that high-quality single crystals of $R$ = Y, Lu, and Ho could be easily grown with essentially the same conditions as those reported in literature, that is, with an atmosphere of normal pressure Ar and oxygen mixture and a growth rate…
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We report a study on the crystal growth of the hexagonal manganites $R$MnO$_3$ ($R$ = Y, Lu, Ho, Er, and Tm) by using an optical floating-zone method. It was found that high-quality single crystals of $R$ = Y, Lu, and Ho could be easily grown with essentially the same conditions as those reported in literature, that is, with an atmosphere of normal pressure Ar and oxygen mixture and a growth rate of 2--4 mm/h. However, these conditions were not feasible for growing good crystals of $R$ = Er and Tm. The chemical analysis indicated that it was due to an off-stoichiometric phenomenon in the formed single crystals. We used an effective and simple way to resolve this problem by adjusting the nominal compositions of the polycrystal feed rods to be 1--$2\%$ rare-earth excess. The structures and physical properties were characterized by X-ray diffraction, magnetic susceptibility, specific heat, resistivity, and dielectric constant measurements.
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Submitted 12 November, 2013;
originally announced November 2013.
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Excited exciton and biexciton localised states in a single quantum ring
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
A. Nicolet,
M. Potemski,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from…
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We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from the excited state to the ground state (? 1000 ps). As no significant excitonic Aharonov-Bohm oscillations occur up to 14 T, we conclude that phase coherence around the rim is inhibited as a consequence of height anisotropy in the quantum ring.
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Submitted 23 September, 2013;
originally announced September 2013.
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Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy
Authors:
Petru Tighineanu,
Raphaël Daveau,
Eun Hye Lee,
** Dong Song,
Søren Stobbe,
Peter Lodahl
Abstract:
We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for str…
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We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy quantum dots have a quantum efficiency of about 75% and an oscillator strength between 8 and 10. The quantum dots are found to be fully described by a model for strongly-confined excitons, in contrast to the theoretical prediction that excitons in large quantum dots exhibit the so-called giant oscillator strength. We attribute these findings to localized ground-state excitons in potential minima created by material intermixing during growth. We provide further evidence for the strong-confinement regime of excitons by extracting the size of electron and hole wavefunctions from the phonon-broadened photoluminescence spectra. Furthermore, we explore the temperature dependence of the decay dynamics and, for some quantum dots, observe a pronounced reduction in the effective transition strength with temperature. We quantify and explain these effects as being an intrinsic property of large quantum dots owing to thermal excitation of the ground-state exciton. Our results provide a detailed understanding of the optical properties of large quantum dots in general, and of quantum dots grown by droplet epitaxy in particular.
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Submitted 4 April, 2014; v1 submitted 28 June, 2013;
originally announced June 2013.
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Asymmetry of localised states in a single quantum ring: polarization dependence of excitons and biexcitons
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was ob…
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We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations the biexciton exhibits twice the energy di erence seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.
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Submitted 25 January, 2013;
originally announced January 2013.
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The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy
Authors:
Pilkyung Moon,
J. D. Lee,
S. K. Ha,
E. H. Lee,
W. J. Choi,
J. D. Song,
J. S. Kim,
L. S. Dang
Abstract:
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and…
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We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We investigated the emission energy shifts of the dots and underlying superlattice by post-thermal annealing with photoluminescence and cathodoluminescence measurements, and specified the emissions from the dots by selectively etching the structure down to a lower layer of quantum dots. We studied the influences of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, which has the same composition as the dots, since the superlattice has uniform and well-defined geometry. Theoretical analysis provided the diffusion length dependence of the peak shifts of the emission spectra.
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Submitted 21 August, 2012;
originally announced August 2012.
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Magnetic field dependent impact ionization in InSb
Authors:
**ki Hong,
Taeyueb Kim,
Sungjung Joo,
** Dong Song,
Suk Hee Han,
Kyung-Ho Shin,
Joonyeon Chang
Abstract:
Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one directio…
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Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.
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Submitted 5 June, 2012;
originally announced June 2012.
