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An unconventional platform for two-dimensional Kagome flat bands on semiconductor surfaces
Authors:
Jae Hyuck Lee,
GwanWoo Kim,
Inkyung Song,
Ye** Kim,
Yeonjae Lee,
Sung Jong Yoo,
Deok-Yong Cho,
Jun-Won Rhim,
Jongkeun Jung,
Gunn Kim,
Changyoung Kim
Abstract:
In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation o…
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In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their potential to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating the flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a novel $d$-orbital hybridized Kagome-derived flat band in Ag/Si(111) $\sqrt{3}\times\sqrt{3}$ as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form a Kagome-like structure, where a delicate balance in the hop** parameters of the in-plane $d$-orbitals leads to destructive interference, resulting in a flat band. These results not only introduce a new platform for Kagome physics but also illuminate the potential for integrating metal-semiconductor interfaces into Kagome-related research, thereby opening a new avenue for exploring ideal two-dimensional Kagome systems.
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Submitted 30 December, 2023;
originally announced January 2024.
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Understanding the roles of electronic effect in CO on Pt-Sn alloy surface via band structure measurements
Authors:
Jongkeun Jung,
Sungwoo Kang Laurent Nicolai,
Jisook Hong,
Jan Minár,
Inkyung Song,
Wonshik Kyung,
Soohyun Cho,
Beomseo Kim,
Jonathan D. Denlinger,
Francisco J. C. S. Aires,
Eric Ehret,
Philip N. Ross,
Jihoon Shim,
Slavomir Nemšák,
Doyoung Noh,
Seungwu Han,
Changyoung Kim,
Bong** S. Mun
Abstract:
Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption proce…
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Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption process. As the coverage of CO increases, the degree of charge transfer between CO and Pt shows clear difference to that of Pt-Sn. With comparison to DFT calculation results, the observed distinct features in the band structure are interpreted as backdonation bonding states of Pt molecular orbital to the 2π orbital of CO. Furthermore, the change in the surface charge concentration, measured from the Fermi surface area, shows Pt surface has a larger charge concentration change than Pt-Sn surface upon CO adsorption. The difference in the charge concentration change between Pt and Pt-Sn surfaces reflects the degree of electronic effects during CO adsorption on Pt-Sn.
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Submitted 9 August, 2021;
originally announced August 2021.
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Work function seen with sub-meV precision through laser photoemission
Authors:
Y. Ishida,
J. K. Jung,
M. S. Kim,
J. Kwon,
Y. S. Kim,
D. Chung,
I. Song,
C. Kim,
T. Otsu,
Y. Kobayashi
Abstract:
Electron emission can be utilised to measure the work function of the surface. However, the number of significant digits in the values obtained through thermionic-, field- and photo-emission techniques is typically just two or three. Here, we show that the number can go up to five when angle-resolved photoemission spectroscopy (ARPES) is applied. This owes to the capability of ARPES to detect the…
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Electron emission can be utilised to measure the work function of the surface. However, the number of significant digits in the values obtained through thermionic-, field- and photo-emission techniques is typically just two or three. Here, we show that the number can go up to five when angle-resolved photoemission spectroscopy (ARPES) is applied. This owes to the capability of ARPES to detect the slowest photoelectrons that are directed only along the surface normal. By using a laser-based source, we optimised our setup for the slow photoelectrons and resolved the slowest-end cutoff of Au(111) with the sharpness not deteriorated by the bandwidth of light nor by Fermi-Dirac distribution. The work function was leveled within $\pm$0.4 meV at least from 30 to 90 K and the surface aging was discerned as a meV shift of the work function. Our study opens the investigations into the fifth significant digit of the work function.
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Submitted 21 September, 2020;
originally announced September 2020.
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Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study
Authors:
Hanyoung Ryu,
Yukiaki Ishida,
Bongju Kim,
Jeong Rae Kim,
Woo ** Kim,
Yoshimitsu Kohama,
Shusaku Imajo,
Zhuo Yang,
Wonshik Kyung,
Sungsoo Hahn,
Byungmin Sohn,
Inkyung Song,
Minsoo Kim,
Soonsang Huh,
Jongkeun Jung,
Donghan Kim,
Tae Won Noh,
Saikat Das,
Changyoung Kim
Abstract:
We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a ch…
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We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit.
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Submitted 25 January, 2021; v1 submitted 11 February, 2020;
originally announced February 2020.
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Giant Rashba-type spin splitting through spin-dependent interatomic-hop**
Authors:
Jisook Hong,
Jun-Won Rhim,
Inkyung Song,
Changyoung Kim,
Seung Ryong Park,
Ji Hoon Shim
Abstract:
We have performed density functional theory calculation and tight binging analysis in order to investigate the mechanism for the giant Rashba-type spin splitting (RSS) observed in Bi/Ag(111). We find that local orbital angular momentum induces momentum and spin dependent charge distribution which results in spin-dependent hop**. We show that the spin-dependent interatomic-hop** in Bi/Ag(111) w…
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We have performed density functional theory calculation and tight binging analysis in order to investigate the mechanism for the giant Rashba-type spin splitting (RSS) observed in Bi/Ag(111). We find that local orbital angular momentum induces momentum and spin dependent charge distribution which results in spin-dependent hop**. We show that the spin-dependent interatomic-hop** in Bi/Ag(111) works as a strong effective field and induces the giant RSS, indicating that the giant RSS is driven by hop**, not by a uniform electric field. The effective field from the hop** energy difference amounts to be ~18 V/Å. This new perspective on the RSS gives us a hint for the giant RSS mechanism in general and should provide a strategy for designing new RSS materials by controlling spin-dependence of hop** energy between the neighboring atomic layers.
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Submitted 12 September, 2017;
originally announced September 2017.
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Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene
Authors:
Youngwook Kim,
Jaesung Park,
Intek Song,
Jong Mok Ok,
Younjung Jo,
Kenji Watanabe,
Takashi Taniguchi,
Hee Cheul Choi,
Dong Su Lee,
Suyong Jung,
Jun Sung Kim
Abstract:
Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay…
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Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay of the relative strength of valley, spin and layer polarizations in twisted bilayer graphene. The energy gaps of the broken-symmetry QH states show an electron-hole asymmetric behaviour, and their dependence on the induced displacement field are opposite between even and odd filling factor states. These results strongly suggest that the QH states with broken valley and spin symmetries for individual layer become hybridized via interlayer tunnelling, and the hierarchy of the QH states is sensitive to both magnetic field and displacement field due to charge imbalance between layers.
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Submitted 4 December, 2016; v1 submitted 1 December, 2016;
originally announced December 2016.
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Direct momentum-resolved observation of one-dimensional confinement of externally doped electrons within a single subnanometre-scale wire
Authors:
Inkyung Song,
Dong-Hwa Oh,
Ha-Chul Shin,
Sung-Joon Ahn,
Youngkwon Moon,
Sun-Hee Woo,
Hyoung Joon Choi,
Chong-Yun Park,
Joung Real Ahn
Abstract:
Cutting-edge research in the band engineering of nanowires at the ultimate fine scale is related to the minimum scale of a nanowire-based device. The fundamental issue at the subnanometre scale is whether angle-resolved photoemission spectroscopy (ARPES) can be used to directly measure the momentum-resolved electronic structure of a single wire because of the difficulty associated with assembling…
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Cutting-edge research in the band engineering of nanowires at the ultimate fine scale is related to the minimum scale of a nanowire-based device. The fundamental issue at the subnanometre scale is whether angle-resolved photoemission spectroscopy (ARPES) can be used to directly measure the momentum-resolved electronic structure of a single wire because of the difficulty associated with assembling single wire into an ordered array for such measurements. Here, we demonstrated that the one-dimensional (1D) confinement of electrons, which are transferred from external dopants, within a single subnanometre-scale wire (subnanowire) could be directly measured using ARPES. Convincing evidence of 1D electron confinement was obtained using two different gold subnanowires with characteristic single metallic bands that were alternately and spontaneously ordered on a stepped silicon template, Si(553). Noble metal atoms were adsorbed at room temperature onto the gold subnanowires while maintaining the overall structure of the wires. Only one type of gold subnanowires could be controlled using external noble metal dopants without transforming the metallic band of the other type of gold subnanowires. This result was confirmed by scanning tunnelling microscopy experiments and first-principles calculations. The selective control clearly showed that externally doped electrons could be confined within a single gold subnanowire. This experimental evidence was used to further investigate the effects of the disorder induced by external dopants on a single subnanowire using ARPES.
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Submitted 28 January, 2015;
originally announced January 2015.
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Opening and reversible control of a wide energy gap in uniform monolayer graphene
Authors:
Cheolho Jeon,
Ha-Chul Shin,
Inkyung Song,
Minkook Kim,
Ji-Hoon Park,
Jungho Nam,
Dong-Hwa Oh,
Sunhee Woo,
Chan-Cuk Hwang,
Chong-Yun Park,
Joung Real Ahn
Abstract:
For graphene to be used in semiconductor applications, a wide energy gap of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene, except in the cases of narrow, chemically terminated graphene nanostructures with inevitable edge defects. Here, we demonstrated that a wide energy gap of 0.74 eV…
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For graphene to be used in semiconductor applications, a wide energy gap of at least 0.5 eV at the Dirac energy must be opened without the introduction of atomic defects. However, such a wide energy gap has not been realized in graphene, except in the cases of narrow, chemically terminated graphene nanostructures with inevitable edge defects. Here, we demonstrated that a wide energy gap of 0.74 eV, which is larger than that of germanium, could be opened in uniform monolayer graphene without the introduction of atomic defects into graphene. The wide energy gap was opened through the adsorption of self-assembled twisted sodium nanostrips. Furthermore, the energy gap was reversibly controllable through the alternate adsorption of sodium and oxygen. The opening of such a wide energy gap with minimal degradation of mobility could improve the applicability of graphene in semiconductor devices, which would result in a major advancement in graphene technology.
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Submitted 12 June, 2014;
originally announced June 2014.
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Influence of graphene-substrate interactions on configurations of organic molecules on graphene: pentacene/epitaxial graphene/SiC
Authors:
W. Jung,
D. -H. Oh,
I. Song,
H. -C. Shin,
S. J. Ahn,
Y. Moon,
C. -Y. Park,
J. R. Ahn
Abstract:
Pentacene has been used widely in organic devices, and the interface structure between pentacene and a substrate is known to significantly influence device performances. Here we demonstrate that molecular ordering of pentacene on graphene depends on the interaction between graphene and its underlying SiC substrate. The adsorption of pentacene molecules on zero-layer and single-layer graphene, whic…
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Pentacene has been used widely in organic devices, and the interface structure between pentacene and a substrate is known to significantly influence device performances. Here we demonstrate that molecular ordering of pentacene on graphene depends on the interaction between graphene and its underlying SiC substrate. The adsorption of pentacene molecules on zero-layer and single-layer graphene, which were grown on a Sifaced 6H-SiC(0001) wafer, was studied using scanning tunneling microscopy (STM). Pentacene molecules form a quasi-amorphous layer on zero-layer graphene which interacts strongly with the underlying SiC substrate. In contrast, they form a uniformly ordered layer on the single-layer graphene having a weak graphene-SiC interaction. Furthermore, we could change the configuration of pentacene molecules on the singlelayer graphene by using STM tips. The results suggest that the molecular ordering of pentacene on graphene and the pentacene/graphene interface structure can be controlled by a graphene-substrate interaction.
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Submitted 12 June, 2014;
originally announced June 2014.
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Multi-slot optical Yagi-Uda antenna for efficient unidirectional radiation to free space
Authors:
**eun Kim,
Young-Geun Roh,
Sangmo Cheon,
Jong-Ho Choe,
Jongcheon Lee,
Jaesoong Lee,
Un Jeong Kim,
Yeonsang Park,
In Yong Song,
Q-Han Park,
Sung Woo Hwang,
Kinam Kim,
Chang-Won Lee
Abstract:
Plasmonic nanoantennas are key elements in nanophotonics capable of directing radiation or enhancing the transition rate of a quantum emitter. Slot-type magnetic-dipole nanoantennas, which are complementary structures of typical electric-dipole-type antennas, have received little attention, leaving their antenna properties largely unexplored. Here we present a novel magnetic-dipole-fed multi-slot…
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Plasmonic nanoantennas are key elements in nanophotonics capable of directing radiation or enhancing the transition rate of a quantum emitter. Slot-type magnetic-dipole nanoantennas, which are complementary structures of typical electric-dipole-type antennas, have received little attention, leaving their antenna properties largely unexplored. Here we present a novel magnetic-dipole-fed multi-slot optical Yagi-Uda antenna. By engineering the relative phase of the interacting surface plasmon polaritons between the slot elements, we demonstrate that the optical antenna exhibits highly unidirectional radiation to free space. The unique features of the slot-based magnetic nanoantenna provide a new possibility of achieving integrated features such as energy transfer from one waveguide to another by working as a future optical via.
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Submitted 16 August, 2013; v1 submitted 6 January, 2013;
originally announced January 2013.
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30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
Authors:
Sukang Bae,
Hyeong Keun Kim,
Youngbin Lee,
Xianfang Xu,
Jae-Sung Park,
Yi Zheng,
Jayakumar Balakrishnan,
Danho Im,
Tian Lei,
Young Il Song,
Young ** Kim,
Kwang S. Kim,
Barbaros Özyilmaz,
Jong-Hyun Ahn,
Byung Hee Hong,
Sumio Iijima
Abstract:
We report that 30-inch scale multiple roll-to-roll transfer and wet chemical do** considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO).…
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We report that 30-inch scale multiple roll-to-roll transfer and wet chemical do** considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances.
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Submitted 16 March, 2010; v1 submitted 30 December, 2009;
originally announced December 2009.
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Wafer-scale synthesis and transfer of graphene films
Authors:
Youngbin Lee,
Sukang Bae,
Houk Jang,
Sukjae Jang,
Shou-En Zhu,
Sung Hyun Sim,
Young Il Song,
Byung Hee Hong,
Jong-Hyun Ahn
Abstract:
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gaug…
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We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
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Submitted 26 October, 2009;
originally announced October 2009.
