-
$h/e$ superconducting quantum interference through trivial edge states in InAs
Authors:
Folkert K. de Vries,
Tom Timmerman,
Viacheslav P. Ostroukh,
Jasper van Veen,
Arjan J. A. Beukman,
Fanming Qu,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID…
▽ More
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.
△ Less
Submitted 18 September, 2017; v1 submitted 12 September, 2017;
originally announced September 2017.
-
Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
▽ More
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
△ Less
Submitted 11 April, 2017;
originally announced April 2017.
-
Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Authors:
Fanming Qu,
Jasper van Veen,
Folkert K. de Vries,
Arjan J. A. Beukman,
Michael Wimmer,
Wei Yi,
Andrey A. Kiselev,
Binh-Minh Nguyen,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum w…
▽ More
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
△ Less
Submitted 18 August, 2016;
originally announced August 2016.
-
Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Authors:
Binh-Minh Nguyen,
Andrey A. Kiselev,
Ramsey Noah,
Wei Yi,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Morten Kjaergaard,
Henri J. Suominen,
Fabrizio Nichele,
Charles M. Marcus,
Michael J. Manfra,
Marko Sokolich
Abstract:
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance f…
▽ More
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.
△ Less
Submitted 16 May, 2016;
originally announced May 2016.
-
Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Authors:
Fabrizio Nichele,
Morten Kjaergaard,
Henri J. Suominen,
Rafal Skolasinski,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Fanming Qu,
Arjan J. A. Beukman,
Leo P. Kouwenhoven,
Charles M. Marcus
Abstract:
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like state…
▽ More
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
△ Less
Submitted 24 November, 2016; v1 submitted 4 May, 2016;
originally announced May 2016.
-
Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
▽ More
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
△ Less
Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
-
Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Authors:
Wei Yi,
Andrey A. Kiselev,
Jacob Thorp,
Ramsey Noah,
Binh-Minh Nguyen,
Steven Bui,
Rajesh D. Rajavel,
Tahir Hussain,
Mark Gyure,
Philip Kratz,
Qi Qian,
Michael J. Manfra,
Vlad S. Pribiag,
Leo P. Kouwenhoven,
Charles M. Marcus,
Marko Sokolich
Abstract:
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is…
▽ More
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.
△ Less
Submitted 23 March, 2015;
originally announced March 2015.
-
Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Authors:
Fanming Qu,
Arjan J. A. Beukman,
Stevan Nadj-Perge,
Michael Wimmer,
Binh-Minh Nguyen,
Wei Yi,
Jacob Thorp,
Marko Sokolich,
Andrey A. Kiselev,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and c…
▽ More
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
△ Less
Submitted 19 February, 2015;
originally announced February 2015.
-
High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Authors:
Binh-Minh Nguyen,
Wei Yi,
Ramsey Noah,
Jacob Thorp,
Marko Sokolich
Abstract:
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need…
▽ More
We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500,000 cm2/Vs at sheet charge density of 8x1011 cm-2 and approaching 100,000 cm2/Vs near the charge neutrality point (CNP). Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.
△ Less
Submitted 15 December, 2014;
originally announced December 2014.
-
Undoped accumulation-mode Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Richard S. Ross,
Thomas M. Hazard,
Kevin S. Holabird,
Biqin Huang,
Andrey A. Kiselev,
Peter W. Deelman,
Leslie D. Warren,
Ivan Milosavljevic,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrate…
▽ More
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
△ Less
Submitted 4 August, 2014;
originally announced August 2014.
-
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Edward T. Croke,
Brett M. Maune,
Biqin Huang,
Richard S. Ross,
Andrey A. Kiselev,
Peter W. Deelman,
Ivan Alvarado-Rodriguez,
Adele E. Schmitz,
Marko Sokolich,
Kevin S. Holabird,
Thomas M. Hazard,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double d…
▽ More
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
△ Less
Submitted 30 June, 2011;
originally announced June 2011.
-
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Richard S. Ross,
Andrey A. Kiselev,
Edward T. Croke,
Kevin S. Holabird,
Peter W. Deelman,
Leslie D. Warren,
Ivan Alvarado-Rodriguez,
Ivan Milosavljevic,
Fiona C. Ku,
Wah S. Wong,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings…
▽ More
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
△ Less
Submitted 13 April, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
