Showing 1–19 of 19 results for author: Sohn, B

Strain tunable electronic ground states in two-dimensional iridate thin films

Authors: Donghan Kim, Byungmin Sohn, Yeonjae Lee, Jeongkeun Song, Mi Kyung Kim, Minjae Kim, Tae Won Noh, Changyoung Kim

Abstract: Quantum phases of matter such as superconducting, ferromagnetic and Wigner crystal states are often driven by the two-dimensionality (2D) of correlated systems. Meanwhile, spin-orbit coupling (SOC) is a fundamental element leading to nontrivial topology which gives rise to quantum phenomena such as the large anomalous Hall effect and nontrivial superconductivity. However, the search for controllab… ▽ More Quantum phases of matter such as superconducting, ferromagnetic and Wigner crystal states are often driven by the two-dimensionality (2D) of correlated systems. Meanwhile, spin-orbit coupling (SOC) is a fundamental element leading to nontrivial topology which gives rise to quantum phenomena such as the large anomalous Hall effect and nontrivial superconductivity. However, the search for controllable platforms with both 2D and SOC has been relatively overlooked so far. Here, we control and study the electronic ground states of iridate ultrathin films having both 2D and SOC by angle-resolved photoemission spectroscopy (ARPES) and dynamical mean field theory (DMFT) calculations. The metallicity of SrIrO$_3$ ultrathin films is controlled down to a monolayer by dimensional and strain manipulation. Our results suggest that the iridate ultrathin films can be a controllable 2D SOC platform exhibiting a variety of phenomena for future functional devices. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Comments: 7 pages, 4 figures

Electric control of two-dimensional Van Hove singularity in oxide ultra-thin films

Authors: Donghan Kim, Younsik Kim, Byungmin Sohn, Minsoo Kim, Bongju Kim, Tae Won Noh, Changyoung Kim

Abstract: Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) are known to lead to divergent DOS in two-dimensional (2D) systems. Despite the recent interest in VHSs, only a few controllable cases have been reported to date. In this work, we investigate the electron… ▽ More Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) are known to lead to divergent DOS in two-dimensional (2D) systems. Despite the recent interest in VHSs, only a few controllable cases have been reported to date. In this work, we investigate the electronic band structures of a 2D VHS with angle-resolved photoemission spectroscopy and control transport properties by utilizing an atomically ultrathin SrRuO$_3$ film. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, we precisely control the 2D VHS, and the sign of the charge carrier. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties. △ Less

Submitted 17 February, 2023; v1 submitted 13 February, 2023; originally announced February 2023.

Comments: 7 pages, 4 figures

Tuning orbital-selective phase transitions in a two-dimensional Hund's correlated system

Authors: Eun Kyo Ko, Sungsoo Hahn, Changhee Sohn, Sangmin Lee, Seung-Sup B. Lee, Byungmin Sohn, Jeong Rae Kim, Jaeseok Son, Jeongkeun Song, Youngdo Kim, Donghan Kim, Miyoung Kim, Choong H. Kim, Changyoung Kim, Tae Won Noh

Abstract: Hund's rule coupling ($\textit{J}$) has attracted much attention recently for its role in the description of the novel quantum phases of multi orbital materials. Depending on the orbital occupancy, $\textit{J}$ can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accom… ▽ More Hund's rule coupling ($\textit{J}$) has attracted much attention recently for its role in the description of the novel quantum phases of multi orbital materials. Depending on the orbital occupancy, $\textit{J}$ can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accompanies chemical inhomogeneities. Here, we demonstrate a method to investigate the role of orbital occupancy in $\textit{J}$ related phenomena without inducing inhomogeneities. By growing SrRuO$_3$ monolayers on various substrates with symmetry-preserving interlayers, we gradually tune the crystal field splitting and thus the orbital degeneracy of the Ru $\textit{t$_2$$_g$}$ orbitals. It effectively varies the orbital occupancies of two-dimensional (2D) ruthenates. Via in-situ angle-resolved photoemission spectroscopy, we observe a progressive metal-insulator transition (MIT). It is found that the MIT occurs with orbital differentiation: concurrent opening of a band insulating gap in the $\textit{d$_x$$_y$}$ band and a Mott gap in the $\textit{d$_x$$_z$$_/$$_y$$_z$}$ bands. Our study provides an effective experimental method for investigation of orbital-selective phenomena in multi-orbital materials. △ Less

Submitted 18 October, 2022; v1 submitted 11 October, 2022; originally announced October 2022.

Evolution of electronic band reconstruction in thickness-controlled perovskite SrRuO$_3$ thin films

Authors: Byungmin Sohn, Changyoung Kim

Abstract: Transition metal perovskite oxides display a variety of emergent phenomena which are tunable by tailoring the oxygen octahedral rotation. SrRuO$_3$, a ferromagnetic perovskite oxide, is well-known to have various atomic structures and octahedral rotations when grown as thin films. However, how the electronic structure changes with the film thickness has been hardly studied. Here, by using angle-re… ▽ More Transition metal perovskite oxides display a variety of emergent phenomena which are tunable by tailoring the oxygen octahedral rotation. SrRuO$_3$, a ferromagnetic perovskite oxide, is well-known to have various atomic structures and octahedral rotations when grown as thin films. However, how the electronic structure changes with the film thickness has been hardly studied. Here, by using angle-resolved photoemission spectroscopy and electron diffraction techniques, we study the electronic structure of SrRuO$_3$ thin films as a function of the film thickness. Different reconstructed electronic structures and spectral weights are observed for films with various thicknesses. We suggest that octahedral rotations on the surface can be qualitatively estimated via comparison of intensities of different bands. Our observation and methodology shed light on how structural variation and transition may be understood in terms of photoemission spectroscopy data. △ Less

Submitted 27 September, 2022; originally announced September 2022.

Comments: 4 figures

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Authors: Gwangwoo Kim, Hyong Min Kim, Pawan Kumar, Mahfujur Rahaman, Christopher E. Stevens, Jonghyuk Jeon, Kiyoung Jo, Kwan-Ho Kim, Nicholas Trainor, Haoyue Zhu, Byeong-Hyeok Sohn, Eric A. Stach, Joshua R. Hendrickson, Nicholas R Glavin, Joonki Suh, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained… ▽ More Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: 45 pages, 20 figures (5 main figures, 15 supporting figures)

Journal ref: ACS Nano, 2022

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Authors: Jeong Rae Kim, Byungmin Sohn, Hyeong Jun Lee, Sangmin Lee, Eun Kyo Ko, Sungsoo Hahn, Sangjae Lee, Younsik Kim, Donghan Kim, Hong Joon Kim, Youngdo Kim, Jaeseok Son, Charles H. Ahn, Frederick J. Walker, Ara Go, Miyoung Kim, Choong H. Kim, Changyoung Kim, Tae Won Noh

Abstract: Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenom… ▽ More Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. △ Less

Submitted 8 March, 2022; originally announced March 2022.

Comments: 25 pages, 5 main figures, 16 supplementary figures

Observation of spin-dependent dual ferromagnetism in perovskite ruthenates

Authors: Sungsoo Hahn, Byungmin Sohn, Minjae Kim, Jeong Rae Kim, Soonsang Huh, Younsik Kim, Wonshik Kyung, Minsoo Kim, Donghan Kim, Youngdo Kim, Tae Won Noh, Ji Hoon Shim, Changyoung Kim

Abstract: We performed in-situ angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) experiments to investigate the relationship between electronic band structures and ferromagnetism in SrRuO$_3$ (SRO) thin films. Our high-quality ARPES and SARPES results show clear spin-lifted band structures. The spin polarization is strongly dependent on momentum around the Fermi level, where… ▽ More We performed in-situ angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES (SARPES) experiments to investigate the relationship between electronic band structures and ferromagnetism in SrRuO$_3$ (SRO) thin films. Our high-quality ARPES and SARPES results show clear spin-lifted band structures. The spin polarization is strongly dependent on momentum around the Fermi level, whereas it becomes less dependent at high-binding energies. This experimental observation matches our dynamical mean-field theory (DMFT) results very well. As temperature increases from low to the Curie temperature, spin-splitting gap decreases and band dispersions become incoherent. Based on the ARPES study and theoretical calculation results, we found that SRO possesses spin-dependent electron correlations in which majority and minority spins are localized and itinerant, respectively. Our finding explains how ferromagnetism and electronic structure are connected, which has been under debate for decades in SRO. △ Less

Submitted 15 December, 2021; v1 submitted 15 November, 2021; originally announced November 2021.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 127, 256401 (2021)

Observation of metallic electronic structure in a single-atomic-layer oxide

Authors: Byungmin Sohn, Jeong Rae Kim, Choong H. Kim, Sangmin Lee, Sungsoo Hahn, Younsik Kim, Soonsang Huh, Donghan Kim, Youngdo Kim, Wonshik Kyung, Minsoo Kim, Miyoung Kim, Tae Won Noh, Changyoung Kim

Abstract: Correlated electrons in transition metal oxides (TMOs) exhibit a variety of emergent phases. When TMOs are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial Sr… ▽ More Correlated electrons in transition metal oxides (TMOs) exhibit a variety of emergent phases. When TMOs are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial SrRuO$_3$ film. Combining atomic-scale epitaxy and angle-resolved photoemission measurements, we show that the monolayer SrRuO$_3$ is a strongly correlated metal. Systematic investigation reveals that the interplay between dimensionality and electronic correlation makes the monolayer SrRuO$_3$ an incoherent metal with orbital-selective correlation. Furthermore, the unique electronic phase of the monolayer SrRuO$_3$ is found to be highly tunable, as charge modulation demonstrates an incoherent-to-coherent crossover of the two-dimensional metal. Our work emphasizes the potentially rich phases of single-atomic-layer oxides and provides a guide to the manipulation of their two-dimensional correlated electron systems. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Journal ref: Nat. Commun. 12, 6171 (2021)

Cap** and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO$_3$ films

Authors: Donghan Kim, Byungmin Sohn, Minsoo Kim, Sungsoo Hahn, Youngdo Kim, Jong Hyuk Kim, Young Jai Choi, Changyoung Kim

Abstract: Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) cap** layer and ionic liquid gating. STO… ▽ More Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) cap** layer and ionic liquid gating. STO cap** results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell (uc) films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface. △ Less

Submitted 3 May, 2021; v1 submitted 19 July, 2020; originally announced July 2020.

Comments: 5 pages, 5 figures

Journal ref: Appl.Phys.Lett. 118, 173102 (2021)

Detection of the Chiral Spin Structure in Ferromagnetic SrRuO$_3$ Thin Film

Authors: H. Huang, S. -J. Lee, B. Kim, B. Sohn, C. Kim, C. -C. Kao, J. -S. Lee

Abstract: A SrRuO$_3$ (SRO) thin film and its heterostructure have brought much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft x-ray scattering (RSXS) at oxygen K-edge to investigate the spin configuration of a 4 u… ▽ More A SrRuO$_3$ (SRO) thin film and its heterostructure have brought much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft x-ray scattering (RSXS) at oxygen K-edge to investigate the spin configuration of a 4 unit-cell SRO film that was grown epitaxially on a single crystal SrTiO$_3$. The RSXS signal under a magnetic field (~0.4 Tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Journal ref: published - ACS Applied Materials & Interfaces 12, 37757 (2020)

Electronic band structure of (111) $SrRuO_{3}$ thin film$-$an angle-resolved photoemission spectroscopy study

Authors: Hanyoung Ryu, Yukiaki Ishida, Bongju Kim, Jeong Rae Kim, Woo ** Kim, Yoshimitsu Kohama, Shusaku Imajo, Zhuo Yang, Wonshik Kyung, Sungsoo Hahn, Byungmin Sohn, Inkyung Song, Minsoo Kim, Soonsang Huh, Jongkeun Jung, Donghan Kim, Tae Won Noh, Saikat Das, Changyoung Kim

Abstract: We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a ch… ▽ More We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO$_3$ (SRO) thin films using \textit{in situ} angle-resolved photoemission spectroscopy (ARPES) technique. We observed previously unreported, light bands with a renormalized quasiparticle effective mass of about 0.8$m_{e}$. The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range 44 to 90 meV contribute to the coupling. Besides, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 eV and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling \textit{in situ} electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures$-$a prerequisite for exploring possible topological quantum states in the bilayer limit. △ Less

Submitted 25 January, 2021; v1 submitted 11 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. B 102, 041102 (2020)

Sign-tunable anomalous Hall effect induced by two-dimensional symmetry-protected nodal structures in ferromagnetic perovskite oxide thin films

Authors: Byungmin Sohn, Eunwoo Lee, Se Young Park, Wonshik Kyung, **woong Hwang, Jonathan D. Denlinger, Minsoo Kim, Donghan Kim, Bongju Kim, Hanyoung Ryu, Soonsang Huh, Ji Seop Oh, Jong Keun Jung, Dong** Oh, Younsik Kim, Moonsup Han, Tae Won Noh, Bohm-Jung Yang, Changyoung Kim

Abstract: Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by SOC, the nodal structures become a source of Berry curvature; this leads to a large anomalous Hall effect (AHE). Contrary to three-dimensional systems th… ▽ More Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be lifted by SOC, the nodal structures become a source of Berry curvature; this leads to a large anomalous Hall effect (AHE). Contrary to three-dimensional systems that naturally host nodal points/lines, two-dimensional (2D) systems can possess stable nodal structures only when proper crystalline symmetry exists. Here we show that 2D spin-polarized band structures of perovskite oxides generally support symmetry-protected nodal lines and points that govern both the sign and the magnitude of the AHE. To demonstrate this, we performed angle-resolved photoemission studies of ultrathin films of SrRuO$_3$, a representative metallic ferromagnet with SOC. We show that the sign-changing AHE upon variation in the film thickness, magnetization, and chemical potential can be well explained by theoretical models. Our study is the first to directly characterize the topological band structure of 2D spin-polarized bands and the corresponding AHE, which could facilitate new switchable devices based on ferromagnetic ultrathin films. △ Less

Submitted 4 July, 2021; v1 submitted 10 December, 2019; originally announced December 2019.

$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film

Authors: Shoresh Soltani, Sungyun Hong, Bongju Kim, Donghan Kim, Jong Keun Jun, Byungmin Sohn, Tae Won Noh, Kookrin Char, Changyoung Kim

Abstract: We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacu… ▽ More We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{\circ}$C up to 550$^{\circ}$C, followed by LEED and ARPES measurements show 1$\times$1 surfaces with non-dispersive energy-momentum bands. The 1$\times$1 surface reconstructs into a $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ one at the annealing temperature of 700$^{\circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$\times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{\circ}$C. Another UHV annealing at 600$^{\circ}$C followed by LEED and ARPES measurements, suggests that LEED $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction. △ Less

Submitted 22 March, 2020; v1 submitted 2 December, 2019; originally announced December 2019.

Comments: 7 pages, 4 figures, Journal

Journal ref: Phys. Rev. Materials 4, 055003 (2020)

Hump-like structure in Hall signal from SrRuO$_3$ ultra-thin films without inhomogeneous anomalous Hall effect

Authors: Byungmin Sohn, Bongju Kim, Jun Woo Choi, Seo Hyoung Chang, Jung Hoon Han, Changyoung Kim

Abstract: A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic… ▽ More A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $ρ_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $ρ_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $ρ_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $ρ_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 6 pages, 4 figures

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Authors: Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon, Seong In Yoon, Seokmo Hong, Young ** Cho, Abhishek Misra, Servet Ozdemir, Jun Yin, Davit Ghazaryan, Mathew Holwill, Artem Mishchenko, Daria V. Andreeva, Yong-** Kim, Hu Young Jeong, A-Rang Jang, Hyun-Jong Chung, Andre K. Geim, Kostya S. Novoselov, Byeong-Hyeok Sohn, Hyeon Suk Shin

Abstract: Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical… ▽ More Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices. △ Less

Submitted 16 January, 2019; originally announced January 2019.

Journal ref: Nature Communications, Volume 10, Article number 230 (2019)

Orbital-selective confinement effect of Ru $4d$ orbitals in SrRuO$_3$ ultrathin film

Authors: Soonmin Kang, Yi Tseng, Beom Hyun Kim, Seokhwan Yun, Byungmin Sohn, Bongju Kim, Daniel McNally, Eugenio Paris, Choong H. Kim, Changyoung Kim, Tae Won Noh, Sumio Ishihara, Thorsten Schmitt, Je-Geun Park

Abstract: The electronic structure of SrRuO$_3$ thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru $4d$ orbitals. At the same time, we observe… ▽ More The electronic structure of SrRuO$_3$ thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru $4d$ orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO$_3$ films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO$_6$ clusters. △ Less

Submitted 24 December, 2018; originally announced December 2018.

Comments: 7 pages, 7 figures

Stable hump-like Hall effect and non-coplanar spin textures in SrRuO$_3$ ultrathin film

Authors: Byungmin Sohn, Bongju Kim, Se Young Park, Hwan Young Choi, Jae Young Moon, Taeyang Choi, Young Jai Choi, Hua Zhou, Jun Woo Choi, Alessandro Bombardi, Dan. G. Porter, Seo Hyoung Chang, Jung Hoon Han, Changyoung Kim

Abstract: We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^\circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, w… ▽ More We observed a hump-like feature in Hall effects of SrRuO$_3$ ultrathin films, and systematically investigated it with controlling thicknesses, temperatures and magnetic fields. The hump-like feature is extremely stable, even surviving as a magnetic field is tilted by as much as 85$^\circ$. Based on the atomic-level structural analysis of a SrRuO$_3$ ultrathin film with a theoretical calculation, we reveal that atomic rumplings at the thin-film surface enhance Dzyaloshinskii-Moriya interaction, which can generate stable chiral spin textures and a hump-like Hall effect. Moreover, temperature dependent resonant X-ray measurements at Ru L-edge under a magnetic field showed that the intensity modulation of unexpected peaks was correlated with the hump region in the Hall effect. We verify that the two-dimensional property of ultrathin films generates stable non-coplanar spin textures having a magnetic order in a ferromagnetic oxide material. △ Less

Submitted 28 July, 2021; v1 submitted 3 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Research 3, 023232 (2021)

Structural investigation of the insulator-metal transition in NiS$_{2-x}$Se$_x$ compounds

Authors: Garam Han, Sungkyun Choi, Hwanbeom Cho, Byungmin Sohn, Je-Geun Park, Changyoung Kim

Abstract: We report on a combined measurement of high-resolution x-ray diffraction on powder and Raman scattering on single crystalline NiS2-xSex samples that exhibit the insulator-metal transition with Se do**. Via x-rays, an abrupt change in the bond length between Ni and S (Se) ions was observed at the transition temperature, in sharp contrast to the almost constant bond length between chalcogen ions.… ▽ More We report on a combined measurement of high-resolution x-ray diffraction on powder and Raman scattering on single crystalline NiS2-xSex samples that exhibit the insulator-metal transition with Se do**. Via x-rays, an abrupt change in the bond length between Ni and S (Se) ions was observed at the transition temperature, in sharp contrast to the almost constant bond length between chalcogen ions. Raman scattering, a complementary technique with the unique sensitivity to the vibrations of chalcogen bonds, revealed no anomalies in the phonon spectrum, consistent with the x-ray diffraction results. This indicates the important role of the interaction between Ni and S (Se) in the insulator-metal transition. The potential implication of this interpretation is discussed in terms of current theoretical models. △ Less

Submitted 7 September, 2018; originally announced September 2018.

Comments: 17 pages, 12 figures, to appear in PRB

Electronic characteristics of ultrathin SrRuO$_3$ films and their relationship with the metal$-$insulator transition

Authors: Subeen Pang, Yoonkoo Kim, Yeong Jae Shin, Byungmin Sohn, SeungYong Lee, Tae Won Noh, Miyoung Kim

Abstract: SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and conducting SRO to correlate them with the metal$-$insulator transition (MIT). Importantly, the central layer of the ultrathin insulating film exhibits distinct f… ▽ More SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and conducting SRO to correlate them with the metal$-$insulator transition (MIT). Importantly, the central layer of the ultrathin insulating film exhibits distinct features from the metallic SRO. Moreover, EEL near edge spectra adjacent to the SrTiO$_3$ (STO) substrate or to the cap** layer are remarkably similar to those of STO. The site$-$projected density of states based on density functional theory (DFT) partially reflects the characteristics of the spectra of these layers. These results may provide important information on the possible influence of STO on the electronic states of ultrathin SRO. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Comments: 6 pages; 5 figures