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Revealing the Electronic Structure of NiPS$_3$ through Synchrotron-Based ARPES and Alkali Metal Dosing
Authors:
Yifeng Cao,
Qishuo Tan,
Yucheng Guo,
Clóvis Guerim Vieira,
Mário S. C. Mazzon,
Jude Laverock,
Nicholas Russo,
Hongze Gao,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
**ghua Guo,
Ming Yi,
Matheus J. S. Matos,
Xi Ling,
Kevin E. Smith
Abstract:
This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$.…
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This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the Néel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.
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Submitted 2 July, 2024;
originally announced July 2024.
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Spectral evidence for NiPS3 as a Mott-Hubbard insulator
Authors:
Yifeng Cao,
Nicholas Russo,
Qishuo Tan,
Xi Ling,
**ghua Guo,
Yi-de Chuang,
Kevin E. Smith
Abstract:
The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been appli…
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The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been applied to investigate the electronic structure of NiPS3. With the aid of theoretical calculations using the charge-transfer multiplet model, we provide experimental evidence for NiPS3 being a Mott-Hubbard insulator rather than a charge-transfer insulator. Moreover, we explain why some previous XAS studies have concluded that NiPS3 is a charge-transfer insulator by comparing surface and bulk sensitive spectra.
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Submitted 1 July, 2024;
originally announced July 2024.
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Thermal conversion of ultrathin nickel hydroxide for wide bandgap 2D nickel oxides
Authors:
Lu **,
Nicholas Russo,
Zifan Wang,
Ching-Hsiang Yao,
Kevin E. Smith,
Xi Ling
Abstract:
Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fa…
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Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D opto-electronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domain (e.g. >10 nm), expanding the 2D TMOs family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the lateral domain size larger than 10 um. Moreover, the conversion process is investigated using various microscopic techniques such as atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), providing significant insights on the morphology and structure variation under different oxidative conditions. The electronic structure of the converted NixOy is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption (XAS) and emission spectroscopies (XES).
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Submitted 15 April, 2024;
originally announced April 2024.
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The Dirac nodal line network in non-symmorphic rutile semimetal RuO$_2$
Authors:
Vedran Jovic,
Roland J. Koch,
Swarup K. Panda,
Helmuth Berger,
Philippe Bugnon,
Arnaud Magrez,
Ronny Thomale,
Kevin E. Smith,
Silke Biermann,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Domenico Di Sante,
Simon Moser
Abstract:
We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of signifi…
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We employ angle resolved photoemission spectroscopy (ARPES) to investigate the Fermi surface of RuO$_2$. We find a network of two Dirac nodal lines (DNL) as previously predicted in theory, where the valence- and conduction bands touch along continuous lines in momentum space. In addition, we find evidence for a third DNL close to the Fermi level which appears robust despite the presence of significant spin orbit coupling. We demonstrate that the third DNL gives rise to a topologically trivial flat-band surface state (FBSS) at the (110) surface. This FBSS can be tuned by surface do** and presents an interesting playground for the study of surface chemistry and exotic correlation phenomena.
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Submitted 6 August, 2019;
originally announced August 2019.
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Nano-engineering of electron correlation in oxide superlattices
Authors:
J. Laverock,
M. Gu,
V. Jovic,
J. W. Lu,
S. A. Wolf,
R. M. Qiao,
W. Yang,
K. E. Smith
Abstract:
Oxide heterostructures and superlattices have attracted a great deal of attention in recent years owing to the rich exotic properties encountered at their interfaces. We focus on the potential of tunable correlated oxides by investigating the spectral function of the prototypical correlated metal SrVO3, using soft x-ray absorption spectroscopy (XAS) and resonant inelastic soft x-ray scattering (RI…
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Oxide heterostructures and superlattices have attracted a great deal of attention in recent years owing to the rich exotic properties encountered at their interfaces. We focus on the potential of tunable correlated oxides by investigating the spectral function of the prototypical correlated metal SrVO3, using soft x-ray absorption spectroscopy (XAS) and resonant inelastic soft x-ray scattering (RIXS) to access both unoccupied and occupied electronic states, respectively. We demonstrate a remarkable level of tunability in the spectral function of SrVO3 by varying its thickness within the SrVO3/SrTiO3 superlattice, showing that the effects of electron correlation can be tuned from dominating the energy spectrum in a strongly correlated Mott-Hubbard insulator, towards a correlated metal. We show that the effects of dimensionality on the correlated properties of SrVO3 are augmented by interlayer coupling, yielding a highly flexible correlated oxide that may be readily married with other oxide systems.
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Submitted 14 March, 2019;
originally announced March 2019.
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Observation of weakened V-V dimers in the monoclinic metallic phase of strained VO2
Authors:
J. Laverock,
V. Jovic,
A. A. Zakharov,
Y. R. Niu,
S. Kittiwatanakul,
B. Westhenry,
J. W. Lu,
S. A. Wolf,
K. E. Smith
Abstract:
Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT,…
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Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long range order of V-V dimer strength and crystal symmetry become dissociated beyond ~ 200 nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range.
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Submitted 13 March, 2019;
originally announced March 2019.
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Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator
Authors:
C. M. Polley,
V. Jovic,
T. -Y. Su,
M. Saghir,
D. Newby Jr.,
B. Kowalski,
R. Jakiela,
A. Barcz,
M. Guziewicz,
T. Balasubramanian,
G. Balakrishnan,
J. Laverock,
K. E. Smith
Abstract:
The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In do** (up to $x\approx0.4$), a…
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The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In do** (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type do**, Dirac-like surface states persist.
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Submitted 18 February, 2016; v1 submitted 16 August, 2015;
originally announced August 2015.
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Enhanced electron correlations at the SrxCa1-xVO3 surface
Authors:
J. Laverock,
J. Kuyyalil,
B. Chen,
R. P. Singh,
G. Balakrishnan,
B. Karlin,
J. C Woicik,
K. E. Smith
Abstract:
We report hard x-ray photoemission spectroscopy measurements of the electronic structure of the prototypical correlated oxide SrxCa1-xVO3. By comparing spectra recorded at different excitation energies, we show that 2.2 keV photoelectrons contain a substantial surface component, whereas 4.2 keV photoelectrons originate essentially from the bulk of the sample. Bulk-sensitive measurements of the O 2…
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We report hard x-ray photoemission spectroscopy measurements of the electronic structure of the prototypical correlated oxide SrxCa1-xVO3. By comparing spectra recorded at different excitation energies, we show that 2.2 keV photoelectrons contain a substantial surface component, whereas 4.2 keV photoelectrons originate essentially from the bulk of the sample. Bulk-sensitive measurements of the O 2p valence band are found to be in good agreement with ab initio calculations of the electronic structure, with some modest adjustments to the orbital-dependent photoionization cross sections. The evolution of the O 2p electronic structure as a function of the Sr content is dominated by A-site hybridization. Near the Fermi level, the correlated V 3d Hubbard bands are found to evolve in both binding energy and spectral weight as a function of distance from the vacuum interface, revealing higher correlation at the surface than in the bulk.
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Submitted 20 April, 2015;
originally announced April 2015.
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Low-energy V t2g orbital excitations in NdVO3
Authors:
J. Laverock,
B. Chen,
A. R. H. Preston,
D. Newby Jr.,
L. F. J. Piper,
L. D. Tung,
G. Balakrishnan,
P. -A. Glans,
J. -H. Guo,
K. E. Smith
Abstract:
The electronic structure of NdVO3, YVO3 has been investigated as a function of sample temperature using resonant inelastic soft x-ray scattering at the V L3-edge. Most of the observed spectral features are in good agreement with an atomic crystal-field multiplet model. However, a low energy feature is observed at ~0.4 eV that cannot be explained by crystal-field arguments. The resonant behaviour o…
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The electronic structure of NdVO3, YVO3 has been investigated as a function of sample temperature using resonant inelastic soft x-ray scattering at the V L3-edge. Most of the observed spectral features are in good agreement with an atomic crystal-field multiplet model. However, a low energy feature is observed at ~0.4 eV that cannot be explained by crystal-field arguments. The resonant behaviour of this feature establishes it as due to excitations of the V t2g states. Moreover, this feature exhibits a strong sample temperature dependence, reaching maximum intensity in the orbitally-ordered phase of NdVO3, before becoming suppressed at low temperatures. This behaviour indicates that the origin of this feature is a collective orbital excitation, i.e. the bi-orbiton.
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Submitted 17 November, 2014;
originally announced November 2014.
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Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO$_2$
Authors:
J. Laverock,
S. Kittiwatanakul,
A. A. Zakharov,
Y. R. Niu,
B. Chen,
S. A. Wolf,
J. W. Lu,
K. E. Smith
Abstract:
We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phas…
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We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phase, recently identified in high-pressure and nonequilibrium measurements, is accessible in the thermodynamic transition at ambient pressure, and we discuss the implications of these observations on the nature of the MIT in VO$_2$.
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Submitted 17 November, 2014;
originally announced November 2014.
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Resonant soft x-ray emission as a bulk probe of correlated electron behavior in metallic Sr$_x$Ca$_{1-x}$VO$_3$
Authors:
J. Laverock,
B. Chen,
K. E. Smith,
R. P. Singh,
G. Balakrishnan,
M. Gu,
J. W. Lu,
S. A. Wolf,
R. M. Qiao,
W. Yang,
J. Adell
Abstract:
The evolution of electron correlation in Sr$_{x}$Ca$_{1-x}$VO$_3$ has been studied using a combination of bulk-sensitive resonant soft x-ray emission spectroscopy (RXES), surface-sensitive photoemission spectroscopy (PES), and ab initio band structure calculations. We show that the effect of electron correlation is enhanced at the surface. Strong incoherent Hubbard subbands are found to lie ~ 20%…
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The evolution of electron correlation in Sr$_{x}$Ca$_{1-x}$VO$_3$ has been studied using a combination of bulk-sensitive resonant soft x-ray emission spectroscopy (RXES), surface-sensitive photoemission spectroscopy (PES), and ab initio band structure calculations. We show that the effect of electron correlation is enhanced at the surface. Strong incoherent Hubbard subbands are found to lie ~ 20% closer in energy to the coherent quasiparticle features in surface-sensitive PES measurements compared with those from bulk-sensitive RXES, and a ~ 10% narrowing of the overall bandwidth at the surface is also observed.
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Submitted 24 July, 2013;
originally announced July 2013.
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Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure
Authors:
Salinporn Kittiwatanakul,
Jude Laverock,
Dave Newby Jr.,
Kevin E. Smith,
Stuart A. Wolf,
Jiwei Lu
Abstract:
We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive c…
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We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST.
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Submitted 22 July, 2013;
originally announced July 2013.
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k-resolved susceptibility function of 2H-TaSe2 from angle-resolved photoemission
Authors:
J. Laverock,
D. Newby Jr.,
E. Abreu,
R. Averitt,
K. E. Smith,
R. P. Singh,
G. Balakrishnan,
J. Adell,
T. Balasubramanian
Abstract:
The connection between the Fermi surface and charge-density wave (CDW) order is revisited in 2H-TaSe2. Using angle-resolved photoemission spectroscopy, ab initio band structure calculations, and an accurate tight-binding model, we develop the empirical k-resolved susceptibility function, which we use to highlight states that contribute to the susceptibility for a particular q-vector. We show that…
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The connection between the Fermi surface and charge-density wave (CDW) order is revisited in 2H-TaSe2. Using angle-resolved photoemission spectroscopy, ab initio band structure calculations, and an accurate tight-binding model, we develop the empirical k-resolved susceptibility function, which we use to highlight states that contribute to the susceptibility for a particular q-vector. We show that although the Fermi surface is involved in the peaks in the susceptibility associated with CDW order, it is not through conventional Fermi surface nesting, but rather through finite energy transitions from states located far from the Fermi level. Comparison with monolayer TaSe2 illustrates the different mechanisms that are involved in the absence of bilayer splitting.
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Submitted 19 July, 2013;
originally announced July 2013.
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Electronic structure of the kagome staircase compounds Ni3V2O8 and Co3V2O8
Authors:
J. Laverock,
B. Chen,
A. R. H. Preston,
K. E. Smith,
N. R. Wilson,
G. Balakrishnan,
P. -A. Glans,
J. -H. Guo
Abstract:
The electronic structure of the kagome staircase compounds, Ni3V2O8 and Co3V2O8, has been investigated using soft x-ray absorption, soft x-ray emission, and resonant inelastic x-ray scattering (RIXS). Comparison between the two compounds, and with first principles band structure calculations and crystal-field multiplet models, provide unique insight into the electronic structure of the two materia…
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The electronic structure of the kagome staircase compounds, Ni3V2O8 and Co3V2O8, has been investigated using soft x-ray absorption, soft x-ray emission, and resonant inelastic x-ray scattering (RIXS). Comparison between the two compounds, and with first principles band structure calculations and crystal-field multiplet models, provide unique insight into the electronic structure of the two materials. Whereas the location of the narrow (Ni,Co) d bands is predicted to be close to EF, we experimentally find they lie deeper in the occupied O 2p and unoccupied V 3d manifolds, and determine their energy via measured charge-transfer excitations. Additionally, we find evidence for a dd excitation at 1.5 eV in Ni3V2O8, suggesting the V d states may be weakly occupied in this compound, contrary to Co3V2O8. Good agreement is found between the crystal-field dd excitations observed in the experiment and predicted by atomic multiplet theory.
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Submitted 1 May, 2013;
originally announced May 2013.
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Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO$_2$
Authors:
J. Laverock,
A. R. H. Preston,
D. Newby Jr,
K. E. Smith,
S. Sallis,
L. F. J. Piper,
S. Kittiwatanakul,
J. W. Lu,
S. A. Wolf,
M. Leandersson,
T. Balasubramanian
Abstract:
We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions.
We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions.
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Submitted 16 November, 2012;
originally announced November 2012.
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Strain dependence of bonding and hybridization across the metal-insulator transition of VO2
Authors:
J. Laverock,
L. F. J. Piper,
A. R. H. Preston,
B. Chen,
J. McNulty,
K. E. Smith,
S. Kittiwatanakul,
J. W. Lu,
S. A. Wolf,
P. -A. Glans,
J. -H. Guo
Abstract:
Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly str…
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Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO2.
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Submitted 10 February, 2012;
originally announced February 2012.
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Maximum entropy deconvolution of resonant inelastic x-ray scattering spectra
Authors:
J. Laverock,
A. R. H. Preston,
D. Newby Jr,
K. E. Smith,
S. B. Dugdale
Abstract:
Resonant inelastic x-ray scattering (RIXS) has become a powerful tool in the study of the electronic structure of condensed matter. Although the linewidths of many RIXS features are narrow, the experimental broadening can often hamper the identification of spectral features. Here, we show that the Maximum Entropy technique can successfully be applied in the deconvolution of RIXS spectra, improving…
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Resonant inelastic x-ray scattering (RIXS) has become a powerful tool in the study of the electronic structure of condensed matter. Although the linewidths of many RIXS features are narrow, the experimental broadening can often hamper the identification of spectral features. Here, we show that the Maximum Entropy technique can successfully be applied in the deconvolution of RIXS spectra, improving the interpretation of the loss features without a severe increase in the noise ratio.
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Submitted 10 February, 2012; v1 submitted 20 July, 2011;
originally announced July 2011.
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Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
Authors:
H. Kohlstedt,
A. Petraru,
M. Meier J. Denlinger,
J. Guo,
Y. Wanli,
A. Scholl,
B. Freelon,
T. Schneller,
R. Waser,
P. Yu,
R. Ramesh,
T. Learmonth,
P. -A. Glans,
K. E. Smith
Abstract:
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr…
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We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
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Submitted 23 October, 2008;
originally announced October 2008.
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Observation of Spin Fluctuations in a High-Tc Parent Compound Using Resonant Inelastic X-ray Scattering
Authors:
B. Freelon,
P. G. Medaglia,
A. Tebano,
G. Balestrino,
K. Okada,
A. Kotani,
F. Vernay,
T. P. Devereaux,
P. A. Glans,
T. Learmonth,
K. E. Smith,
A. L. D. Kilcoyne,
B. Rude,
I. Furtado,
J. -H. Guo
Abstract:
We report the first observation of soft-x-ray scattering from spin fluctuations in a high-Tc parent compound. An antiferromagnetic charge transfer insulator, CaCuO2, was irradiated by Cu M-edge soft x-rays. Ultra-high resolution measurements of scattered intensity revealed magnon-magnon excitations, due to spin exchange scattering, as low-energy loss features. The process is analogous to optical…
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We report the first observation of soft-x-ray scattering from spin fluctuations in a high-Tc parent compound. An antiferromagnetic charge transfer insulator, CaCuO2, was irradiated by Cu M-edge soft x-rays. Ultra-high resolution measurements of scattered intensity revealed magnon-magnon excitations, due to spin exchange scattering, as low-energy loss features. The process is analogous to optical Raman scattering. The spectra provide the first measurement of the two-magnon excitation energy and the antiferromagnetic exchange parameter in infinite-layer CaCuO2. The results reveal resonant inelastic soft x-ray scattering as a novel probe of the spin dynamics in cuprates.
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Submitted 27 June, 2008;
originally announced June 2008.
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Band structure of ZnO from resonant x-ray emission spectroscopy
Authors:
A. R. H. Preston,
B. J. Ruck,
L. F. J. Piper,
A. DeMasi,
K. E. Smith,
A. Schleife,
F. Fuchs,
F. Bechstedt,
J. Chai,
S. M. Durbin
Abstract:
Soft x-ray emission and absorption spectroscopy of the O K-edge are employed to investigate the electronic structure of wurtzite ZnO(0001). A quasiparticle band structure calculated within the GW approximation agrees well with the data, most notably with the energetic location of the Zn3d - O2p hybridized state and the anisotropy of the absorption spectra. Dispersion in the band structure is map…
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Soft x-ray emission and absorption spectroscopy of the O K-edge are employed to investigate the electronic structure of wurtzite ZnO(0001). A quasiparticle band structure calculated within the GW approximation agrees well with the data, most notably with the energetic location of the Zn3d - O2p hybridized state and the anisotropy of the absorption spectra. Dispersion in the band structure is mapped using the coherent k-selective part of the resonant x-ray emission spectra. We show that a more extensive map** of the bands is possible in the case of crystalline anisotropy such as that found in ZnO.
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Submitted 5 September, 2008; v1 submitted 29 May, 2008;
originally announced May 2008.
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Comparison between experiment and calculated band structures for DyN and SmN
Authors:
A. R. H. Preston,
S. Granville,
D. H. Housden,
B. Ludbrook,
B. J. Ruck,
H. J. Trodahl,
A. Bittar,
G. V. M. Williams,
J. E. Downes,
A. DeMasi,
Y. Zhang,
K. E. Smith,
W. R. L. Lambrecht
Abstract:
We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calcu…
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We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calculations, although for SmN the calculations predict a zero band gap.
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Submitted 19 March, 2008; v1 submitted 28 March, 2007;
originally announced March 2007.
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Quasi-Particle Spectra, Charge-Density-Wave, Superconductivity and Electron-Phonon Coupling in 2H-NbSe2
Authors:
T. Valla,
A. V. Fedorov,
P. D. Johnson,
P-A. Glans,
C. McGuinness,
K. E. Smith,
E. Y. Andrei,
H. Berger
Abstract:
High-resolution photoemission has been used to study the electronic structure of the charge density wave (CDW) and superconducting (SC) dichalcogenide, 2H- NbSe2. From the extracted self-energies, important components of the quasiparticle (QP) interactions have been identified. In contrast to previously studied TaSe2, the CDW transition does not affect the electronic properties significantly. Th…
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High-resolution photoemission has been used to study the electronic structure of the charge density wave (CDW) and superconducting (SC) dichalcogenide, 2H- NbSe2. From the extracted self-energies, important components of the quasiparticle (QP) interactions have been identified. In contrast to previously studied TaSe2, the CDW transition does not affect the electronic properties significantly. The electron-phonon coupling is identified as a dominant contribution to the QP self-energy and is shown to be very anisotropic (k-dependent) and much stronger than in TaSe2.
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Submitted 17 December, 2003; v1 submitted 14 August, 2003;
originally announced August 2003.
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Charge-Density-Wave induced modifications to the quasiparticle self-energy in 2H TaSe2
Authors:
T. Valla,
A. V. Fedorov,
P. D. Johnson,
J. Xue,
K. E. Smith,
F. J. Di Salvo
Abstract:
The self-energy of the photo-hole in 2H-TaSe2 is measured by angle-resolved photoemission spectroscopy (ARPES) as a function of binding energy and temperature. In the charge-density wave (CDW) state, a structure in the self- energy is detected at ~ 65 meV that can not be explained by electron-phonon scattering. A reduction in the scattering rates below this energy indicates the collapse of a maj…
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The self-energy of the photo-hole in 2H-TaSe2 is measured by angle-resolved photoemission spectroscopy (ARPES) as a function of binding energy and temperature. In the charge-density wave (CDW) state, a structure in the self- energy is detected at ~ 65 meV that can not be explained by electron-phonon scattering. A reduction in the scattering rates below this energy indicates the collapse of a major scattering channel with the formation of the CDW state, accompanying the appearance of a bosonic "mode" in the excitation spectrum of the system.
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Submitted 1 November, 2000; v1 submitted 26 May, 2000;
originally announced May 2000.