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Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Authors:
Pengcheng Ma,
Kaveh Delfanazari,
Reuben K. Puddy,
Jiahui Li,
Moda Cao,
Teng Yi,
Jonathan P. Griffiths,
Harvey E. Beere,
David A. Ritchie,
Michael J. Kelly,
Charles G. Smith
Abstract:
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and…
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The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications.
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Submitted 10 April, 2024;
originally announced April 2024.
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Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Authors:
Xinya Bian,
Hannah J Joyce,
Charles G Smith,
Michael J Kelly,
G Andrew D Briggs,
Jan A Mol
Abstract:
In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconne…
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In this paper, we present a reconfigurable multiplex (MUX) setup that increases the throughput of electrical characterisation at cryogenic temperature. The setup separates the MUX circuitry from quantum device under test (qDUT), allowing qDUT chips to be exchanged easily and MUX chips to be reused. To interface with different types of qDUTs, board-level designs are incorporated to allow interconnects flexibly routed into different topology. MUXs are built based on a multiple level selective gating (MLSG) scheme, where the number of multiplexed output channels (interconnects) is exponentially dependent on the number of control lines. In the prototype setup presented in this paper, with 14 out of 44 existing wires from room temperature, 4 MUXs at cryogenic temperature can supply in total 128 interconnects to interface with qDUTs. We validate the MUX setup operation and assess the various limits existed by measuring k$Ω$ resistors made of $μ$m-size graphene ribbons. We further demonstrate the setup by performing charge transport measurement on 128 nm-size graphene quantum devices in a single cooling down.
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Submitted 27 March, 2024;
originally announced March 2024.
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arXiv:2312.11248
[pdf]
quant-ph
cond-mat.mes-hall
cond-mat.str-el
cond-mat.supr-con
physics.app-ph
Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems
Authors:
Kaveh Delfanazari,
Jiahui Li,
Yusheng Xiong,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Ian Farrer,
Sachio Komori,
Jason W. A. Robinson,
Llorenc Serra,
David A. Ritchie,
Michael J. Kelly,
Hannah J. Joyce,
Charles G. Smith
Abstract:
Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a C…
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Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper pairs QPC analogue known as superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realisation of nanoscale SQPC arrays with split gate technology in semiconducting 2D electron systems, exploiting the special gate tunability of the quantum wells, and report the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies.
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Submitted 18 December, 2023;
originally announced December 2023.
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Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays
Authors:
Kaveh Delfanazari,
Jiahui Li,
Peng Ma,
Reuben K. Puddy,
Teng Yi,
Yusheng Xiong,
Ian Farrer,
Sachio Komori,
Jason Robinson,
David A. Ritchie,
Michael J. Kelly,
Hannah J. Joyce,
Charles G. Smith
Abstract:
Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on…
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Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on 2D semiconducting electron systems. Here, we experimentally demonstrate a novel realisation of large-scale scalable, and gate voltage controllable hybrid field effect quantum chips. Each chip contains arrays of split gate field effect hybrid junctions, that work as conductance switches, and are made from In0.75Ga0.25As quantum wells integrated with Nb superconducting electronic circuits. Each hybrid junction in the chip can be controlled and addressed through its corresponding source-drain and two global split gate contact pads that allow switching between their (super)conducting and insulating states. We fabricate a total of 18 quantum chips with 144 field effect hybrid Nb- In0.75Ga0.25As 2DEG-Nb quantum wires and investigate the electrical response, switching voltage (on/off) statistics, quantum yield, and reproducibility of several devices at cryogenic temperatures. The proposed integrated quantum device architecture allows control of individual junctions in a large array on a chip useful for the development of emerging cryogenic nanoelectronics circuits and systems for their potential applications in fault-tolerant quantum technologies.
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Submitted 10 July, 2023;
originally announced July 2023.
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Identifying Many-Body Localization in Realistic Dot Arrays
Authors:
Alexander Nico-Katz,
Gulzat Jaliel,
Paola Atkinson,
Thomas A. Mitchell,
David A. Ritchie,
Charles G. Smith,
Sougato Bose
Abstract:
We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our exper…
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We determine whether or not it is possible to identify many-body localization in quantum dot arrays, given their current technological capacities. We analyze the phase diagram of an extended Fermi-Hubbard model - a theoretical system that quantum dot arrays are known to simulate - using several quantities of varying experimental accessibility. By deriving the parameters of our model from our experimental system, we find that many-body localization can potentially be detected in current-generation quantum dot arrays. A pitfall that we identify is that the freezing of a system due to strong interactions yields signatures similar to conventional localization. We find that the most widely-used experimental signature of localization - the imbalance - is not sensitive to this fact, and may be unsuitable as the lone identifier of the many-body localized regime.
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Submitted 19 January, 2023;
originally announced January 2023.
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A quantum dot-based frequency multiplier
Authors:
G. A. Oakes,
L. Peri,
L. Cochrane,
F. Martins,
L. Hutin,
B. Bertrand,
M. Vinet,
A. Gomez Saiz,
C. J. B. Ford,
C. G. Smith,
M. F. Gonzalez-Zalba
Abstract:
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance…
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Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.
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Submitted 25 November, 2022;
originally announced November 2022.
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Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
Authors:
G. A. Oakes,
V. N. Ciriano-Tejel,
D. Wise,
M. A. Fogarty,
T. Lundberg,
C. Lainé,
S. Schaal,
F. Martins,
D. J. Ibberson,
L. Hutin,
B. Bertrand,
N. Stelmashenko,
J. A. W. Robinson,
L. Ibberson,
A. Hashim,
I. Siddiqi,
A. Lee,
M. Vinet,
C. G. Smith,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we…
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Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
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Submitted 13 March, 2022;
originally announced March 2022.
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Extracting Quantitative Dielectric Properties from Pump-Probe Spectroscopy
Authors:
Arjun Ashoka,
Ronnie R. Tamming,
Aswathy V. Girija,
Hope Bretscher,
Sachin Dev Verma,
Shang-Da Yang,
Chih-Hsuan Lu,
Justin M. Hodgkiss,
David Ritchie,
Chong Chen,
Charles G. Smith,
Christoph Schnedermann,
Michael B. Price,
Kai Chen,
Akshay Rao
Abstract:
Optical pump-probe spectroscopy is a powerful tool for the study of non-equilibrium electronic dynamics and finds wide applications across a range of fields, from physics and chemistry to material science and biology. However, a shortcoming of conventional pump-probe spectroscopy is that photoinduced changes in transmission, reflection and scattering can simultaneously contribute to the measured d…
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Optical pump-probe spectroscopy is a powerful tool for the study of non-equilibrium electronic dynamics and finds wide applications across a range of fields, from physics and chemistry to material science and biology. However, a shortcoming of conventional pump-probe spectroscopy is that photoinduced changes in transmission, reflection and scattering can simultaneously contribute to the measured differential spectra, leading to ambiguities in assigning the origin of spectral signatures and ruling out quantitative interpretation of the spectra. Ideally, these methods would measure the underlying dielectric function (or the complex refractive index) which would then directly provide quantitative information on the transient excited state dynamics free of these ambiguities. Here we present and test a model independent route to transform differential transmission or reflection spectra, measured via conventional optical pump-probe spectroscopy, to changes in the quantitative transient dielectric function. We benchmark this method against changes in the real refractive index measured using time-resolved Frequency Domain Interferometry in prototypical inorganic and organic semiconductor films. Our methodology can be applied to existing and future pump-probe data sets, allowing for an unambiguous and quantitative characterisation of the transient photoexcited spectra of materials. This in turn will accelerate the adoption of pump-probe spectroscopy as a facile and robust materials characterisation and screening tool.
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Submitted 24 August, 2021;
originally announced August 2021.
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Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning
Authors:
Giovanni A. Oakes,
**gyu Duan,
John J. L. Morton,
Alpha Lee,
Charles G. Smith,
M. Fernando Gonzalez Zalba
Abstract:
Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independe…
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Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independently. Increasing the number of quantum dots increases the complexity of the calibration process, which becomes impractical to do heuristically. Inspired by recent demonstrations of industrial-grade silicon quantum dot bilinear arrays, we develop a theoretical framework to mitigate the effect of cross-capacitances in 2x2 arrays of quantum dots, that can be directly extended to 2xN arrays. The method is based on extracting the gradients in gate voltage space of different charge transitions in multiple two-dimensional charge stability diagrams to determine the system's virtual voltages. To automate the process, we train an ensemble of regression models to extract the gradients from a Hough transformation of a stability diagram and validate the algorithm on simulated and experimental data of a 2x2 quantum dot array. Our method provides a completely automated tool to mitigate the effect of cross capacitances, which could be used to study cross capacitance variability across QDs in large bilinear arrays
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Submitted 26 May, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
Authors:
Shu-Wei Wang,
Di Xiao,
Ziwei Dou,
Moda Cao,
Yi-Fan Zhao,
Nitin Samarth,
Cui-Zu Chang,
Malcolm R. Connolly,
Charles G. Smith
Abstract:
Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible diss…
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Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between non-chiral edge states and residual bulk states in different magnetic field regimes. The interactions between bulk states, chiral edge states, and non-chiral edge states are also investigated. Our study provides a way to distinguish between the dissipation arising from the residual bulk states and non-chiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena.
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Submitted 18 September, 2020; v1 submitted 27 August, 2020;
originally announced August 2020.
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Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions
Authors:
Kaveh Delfanazari,
Llorenc Serra,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Moda Cao,
Yilmaz Gul,
Ian Farrer,
David A. Ritchie,
Hannah J. Joyce,
Michael J. Kelly,
Charles G. Smith
Abstract:
While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid…
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While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by swee** out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing.
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Submitted 8 August, 2020; v1 submitted 4 July, 2020;
originally announced July 2020.
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Experimental realization of a quantum dot energy harvester
Authors:
G. Jaliel,
R. K. Puddy,
R. Sánchez,
A. N. Jordan,
B. Sothmann,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
C. G. Smith
Abstract:
We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons…
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We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK.
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Submitted 1 October, 2019; v1 submitted 29 January, 2019;
originally announced January 2019.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices
Authors:
Ziwei Dou,
Sei Morikawa,
Alessandro Cresti,
Shu-Wei Wang,
Charles G. Smith,
Christos Melios,
Olga Kazakova,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm R. Connolly
Abstract:
Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states a…
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Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behavior, their precise nature is unclear. We present a scanning gate microscopy study of moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity (~${10}^{10}$ $cm^{-2}$) and lower resistivity (~$10$ $kΩ$) at the Dirac point we observe current flow along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge do** is responsible for this effect. In addition, a device with low charge impurity (~$10^9$ $cm^{-2}$) and higher resistivity (~$100$ $kΩ$) shows subgap states in the bulk, consistent with the absence of shunting by edge currents.
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Submitted 21 November, 2017;
originally announced November 2017.
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Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
Authors:
Cassandra Chua,
Arseniy Lartsev,
**ggao Sui,
Vishal Panchal,
Reuben Puddy,
Carly Richardson,
Charles G. Smith,
T. J. B. M. Janssen,
Alexander Tzalenchuk,
Rositsa Yakimova,
Sergey Kubatkin,
Malcolm R. Connolly
Abstract:
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphen…
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We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder.
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Submitted 31 March, 2017;
originally announced March 2017.
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Unravelling Quantum Dot Array Simulators via Singlet-Triplet Measurements
Authors:
Johnnie Gray,
Abolfazl Bayat,
Reuben K. Puddy,
Charles G. Smith,
Sougato Bose
Abstract:
Recently, singlet-triplet measurements in double dots have emerged as a powerful tool in quantum information processing. In parallel, quantum dot arrays are being envisaged as analog quantum simulators of many-body models. Thus motivated, we explore the potential of the above singlet-triplet measurements for probing and exploiting the ground-state of a Heisenberg spin chain in such a quantum simul…
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Recently, singlet-triplet measurements in double dots have emerged as a powerful tool in quantum information processing. In parallel, quantum dot arrays are being envisaged as analog quantum simulators of many-body models. Thus motivated, we explore the potential of the above singlet-triplet measurements for probing and exploiting the ground-state of a Heisenberg spin chain in such a quantum simulator. We formulate an efficient protocol to discriminate the achieved many-body ground-state with other likely states. Moreover, the transition between quantum phases, arising from the addition of frustrations in a $J_1-J_2$ model, can be systematically explored using the same set of measurements. We show that the proposed measurements have an application in producing long distance heralded entanglement between well separated quantum dots. Relevant noise sources, such as non-zero temperatures and nuclear spin interactions, are considered.
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Submitted 22 November, 2016; v1 submitted 29 June, 2016;
originally announced June 2016.
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Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
Authors:
N. Ares,
F. J. Schupp,
A. Mavalankar,
G. Rogers,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
A. Cottet,
G. A. D. Briggs,
E. A. Laird
Abstract:
Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of…
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Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of $1.6~\mathrm{aF}/\sqrt{\mathrm{Hz}}$ is achieved at a maximum source-drain bias of $170~μ$V root-mean-square and with bandwidth above $15~$MHz. Coulomb blockade is measured via both conductance and capacitance in a quantum dot, and the two contributions are found to be proportional, as expected from a quasistatic tunneling model. We benchmark our results against the requirements for single-shot qubit readout using quantum capacitance, a goal that has so far been elusive.
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Submitted 30 November, 2015; v1 submitted 23 October, 2015;
originally announced October 2015.
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The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
K. J. Thomas,
F. Sfigakis,
P. See,
J. P. Griffiths,
I. Farrer,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantiz…
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We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.
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Submitted 6 November, 2015; v1 submitted 12 August, 2015;
originally announced August 2015.
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Imaging ballistic carrier trajectories in graphene using scanning gate microscopy
Authors:
Sei Morikawa,
Ziwei Dou,
Shu-Wei Wang,
Charles Gorden Smith,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm Richard Connolly
Abstract:
We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collecto…
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We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.
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Submitted 15 December, 2015; v1 submitted 2 August, 2015;
originally announced August 2015.
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Magnetic field induced charge redistribution in disordered graphene double quantum dots
Authors:
K. L. Chiu,
M. R. Connolly,
A. Cresti,
J. P. Griffiths,
G. A. C. Jones,
C. G. Smith
Abstract:
We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high m…
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We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of B-field is investigated up to 10 Tesla. Our results indicate that the charging energy of quantum dot is reduced, and hence the size of the dot increases, at high magnetic field. We provide an explanation of our results using a tight-binding model, which describes the charge redistribution in a disordered graphene quantum dot via the formation of Landau levels and edge states. Our model suggests that the tunnel barriers separating different electron/hole puddles in a dot become transparent at high B-fields, resulting in the charge delocalization and reduced charging energy observed experimentally.
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Submitted 7 May, 2015;
originally announced May 2015.
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Radio-frequency capacitance spectroscopy of metallic nanoparticles
Authors:
J. C. Frake,
S. Kano,
C. Ciccarelli,
J. Griffiths,
M. Sakamoto,
T. Teranishi,
Y. Majima,
C. G. Smith,
M. R. Buitelaar
Abstract:
Recent years have seen great progress in our understanding of the electronic properties of nanomaterials in which at least one dimension measures less than 100 nm. However, contacting true nanometer scale materials such as individual molecules or nanoparticles remains a challenge as even state-of-the-art nanofabrication techniques such as electron-beam lithography have a resolution of a few nm at…
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Recent years have seen great progress in our understanding of the electronic properties of nanomaterials in which at least one dimension measures less than 100 nm. However, contacting true nanometer scale materials such as individual molecules or nanoparticles remains a challenge as even state-of-the-art nanofabrication techniques such as electron-beam lithography have a resolution of a few nm at best. Here we present a fabrication and measurement technique that allows high sensitivity and high bandwidth readout of discrete quantum states of metallic nanoparticles which does not require nm resolution or precision. This is achieved by coupling the nanoparticles to resonant electrical circuits and measurement of the phase of a reflected radio-frequency signal. This requires only a single tunnel contact to the nanoparticles thus simplifying device fabrication and improving yield and reliability. The technique is demonstrated by measurements on 2.7 nm thiol coated gold nanoparticles which are shown to be in excellent quantitative agreement with theory.
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Submitted 16 March, 2015;
originally announced March 2015.
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Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires
Authors:
L. W. Smith,
H. Al-Taie,
A. A. J. Lesage,
F. Sfigakis,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
A. R. Hamilton,
M. J. Kelly,
C. G. Smith
Abstract:
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that…
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Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.
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Submitted 1 June, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
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Multiplexed Charge-locking Device for Large Arrays of Quantum Devices
Authors:
R. K. Puddy,
L. W Smith,
H. Al-Taie,
C. H. Chong,
I. Farrer,
J. P. Griffiths,
D. A. Ritchie,
M. J. Kelly,
M. Pepper,
C. G. Smith
Abstract:
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divi…
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We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.
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Submitted 21 August, 2014; v1 submitted 12 August, 2014;
originally announced August 2014.
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Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions
Authors:
E. D. Herbschleb,
R. K. Puddy,
P. Marconcini,
J. P. Griffiths,
G. A. C. Jones,
M. Macucci,
C. G. Smith,
M. R. Connolly
Abstract:
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning…
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We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field.
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Submitted 8 August, 2014;
originally announced August 2014.
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Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly
Authors:
L. W. Smith,
H. Al-Taie,
F. Sfigakis,
P. See,
A. A. J. Lesage,
B. Xu,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum…
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The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.
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Submitted 28 July, 2014;
originally announced July 2014.
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A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the m…
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Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible.
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Submitted 22 July, 2014;
originally announced July 2014.
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
Authors:
C. J. Chua,
M. R. Connolly,
A. Lartsev,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
S. Kopylov,
V. I. Fal'ko,
R. Yakimova,
R. Pearce,
T. J. B. M. Janssen,
A. Ya. Tzalenchuk,
C. G. Smith
Abstract:
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons…
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We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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Submitted 27 October, 2014; v1 submitted 22 May, 2014;
originally announced May 2014.
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Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays
Authors:
C. L. Richardson,
S. D. Edkins,
G. R. Berdiyorov,
C. J. Chua,
J. P. Griffiths,
G. A. C. Jones,
M. R. Buitelaar,
V. Narayan,
F. Sfigakis,
C. G. Smith,
L. Covaci,
M. R. Connolly
Abstract:
We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the fo…
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We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point.
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Submitted 21 June, 2015; v1 submitted 3 April, 2014;
originally announced April 2014.
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Non-Ohmic behavior of carrier transport in highly disordered graphene
Authors:
Shun-Tsung Lo,
Chiashain Chuang,
R. K. Puddy,
T. -M. Chen,
C. G. Smith,
C. -T. Liang
Abstract:
We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** reg…
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We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field..
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Submitted 26 October, 2013; v1 submitted 22 October, 2013;
originally announced October 2013.
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Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices
Authors:
H. Al-Taie,
L. W. Smith,
B. Xu,
P. See,
J. P. Griffiths,
H. E. Beere,
G. A. C. Jones,
D. A. Ritchie,
M. J. Kelly,
C. G. Smith
Abstract:
We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plate…
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We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e^2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.
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Submitted 18 June, 2013;
originally announced June 2013.
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A non-invasive electron thermometer based on charge sensing of a quantum dot
Authors:
A. Mavalankar,
S. J. Chorley,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith
Abstract:
We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and 307 mK are measured by this method with an accuracy of up to 3 mK, and agree with those obtained by measuring transport through a quantum dot. The thermometer…
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We present a thermometry scheme to extract the temperature of a 2DEG by monitoring the charge occupation of a weakly tunnel-coupled 'thermometer' quantum dot using a quantum point contact detector. Electronic temperatures between 97 mK and 307 mK are measured by this method with an accuracy of up to 3 mK, and agree with those obtained by measuring transport through a quantum dot. The thermometer does not pass a current through the 2DEG, and can be incorporated as an add-on to measure the temperature simultaneously with another operating device. Further, the tuning is independent of temperature.
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Submitted 29 May, 2013;
originally announced May 2013.
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Tunable Kondo physics in a carbon nanotube double quantum dot
Authors:
S. J. Chorley,
M. R. Galpin,
F. W. Jayatilaka,
C. G. Smith,
D. E. Logan,
M. R. Buitelaar
Abstract:
We investigate a tunable two-impurity Kondo system in a strongly correlated carbon nanotube double quantum dot, accessing the full range of charge regimes. In the regime where both dots contain an unpaired electron, the system approaches the two-impurity Kondo model. At zero magnetic field the interdot coupling disrupts the Kondo physics and a local singlet state arises, but we are able to tune th…
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We investigate a tunable two-impurity Kondo system in a strongly correlated carbon nanotube double quantum dot, accessing the full range of charge regimes. In the regime where both dots contain an unpaired electron, the system approaches the two-impurity Kondo model. At zero magnetic field the interdot coupling disrupts the Kondo physics and a local singlet state arises, but we are able to tune the crossover to a Kondo screened phase by application of a magnetic field. All results show good agreement with a numerical renormalization group study of the device.
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Submitted 17 September, 2012;
originally announced September 2012.
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Gigahertz quantized charge pum** in graphene quantum dots
Authors:
M. R. Connolly,
K. L. Chiu,
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
C. Chua,
J. P. Griffiths,
G. A. C. Jones,
V. I. Fal'ko,
C. G. Smith,
T. J. B. M. Janssen
Abstract:
Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1…
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Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.
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Submitted 27 July, 2012;
originally announced July 2012.
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Quantized Charge Pum** through a Carbon Nanotube Double Quantum Dot
Authors:
S. J. Chorley,
J. Frake,
C. G. Smith,
G. A. C. Jones,
M. R. Buitelaar
Abstract:
We demonstrate single-electron pum** in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron or hole per cycle. We investigate the pum** as a function of the modulation frequency and amplitude and observe good current quantization up to frequencies of…
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We demonstrate single-electron pum** in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots we move the system around charge triple points and transport exactly one electron or hole per cycle. We investigate the pum** as a function of the modulation frequency and amplitude and observe good current quantization up to frequencies of 18 MHz where rectification effects cause the mechanism to break down.
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Submitted 4 April, 2012;
originally announced April 2012.
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Unraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy
Authors:
M. R. Connolly,
R. K. Puddy,
D. Logoteta,
P. Marconcini,
M. Roy,
J. Griffths,
G. A. C. Jones,
P. Maksym,
M. Macucci,
C. G. Smith
Abstract:
We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of h…
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We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.
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Submitted 19 January, 2012;
originally announced January 2012.
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Reading and writing charge on graphene devices
Authors:
M. R. Connolly,
E. D. Herbschleb,
R. K. Puddy,
M. Roy,
D. Anderson,
G. A. C. Jones,
P. Maksym,
C. G. Smith
Abstract:
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characteriz…
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We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results.
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Submitted 2 November, 2011;
originally announced November 2011.
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Measuring the complex admittance of a carbon nanotube double quantum dot
Authors:
S. J. Chorley,
J. Wabnig,
Z. V. Penfold-Fitch,
K. D. Petersson,
J. Frake,
C. G. Smith,
M. R. Buitelaar
Abstract:
We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement with…
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We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement with a theoretical model of the device in the incoherent limit. Besides being of fundamental interest, our results present an important step forward towards non-invasive charge and spin state readout in carbon nanotube quantum dots.
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Submitted 8 September, 2011;
originally announced September 2011.
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Atomic force microscope nanolithography of graphene: cuts, pseudo-cuts and tip current measurements
Authors:
R. K. Puddy,
P. H. Scard,
D. Tyndall,
M. R. Connolly,
C. G. Smith,
G. A. C. Jones,
A. Lombardo,
A. C. Ferrari,
M. R. Buitelaar
Abstract:
We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized…
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We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized by a strong reduction of the tip current above a threshold voltage. The reliability and flexibility of the technique is demonstrated by the fabrication, measurement, modification and re-measurement of graphene nanodevices with resolution down to 15 nm.
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Submitted 14 February, 2011;
originally announced February 2011.
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Tilted potential induced coupling of localized states in a graphene nanoconstriction
Authors:
M. R. Connolly,
K. L. Chiu,
A. Lombardo,
A. Fasoli,
A. C. Ferrari,
D. Anderson,
G. A. C. Jones,
C. G. Smith
Abstract:
We use the charged tip of a low temperature scanning probe microscope to perturb the transport through a graphene nanoconstriction. Maps of the conductance as a function of tip position display concentric halos, and by following the expansion of the halos with back-gate voltage we are able to identify an elongated domain over the nanoconstriction where they originate. Amplitude modulations of the…
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We use the charged tip of a low temperature scanning probe microscope to perturb the transport through a graphene nanoconstriction. Maps of the conductance as a function of tip position display concentric halos, and by following the expansion of the halos with back-gate voltage we are able to identify an elongated domain over the nanoconstriction where they originate. Amplitude modulations of the transmission resonances are correlated with the gradient of the tip-induced potential and we analyze this in terms of modified coupling between localized states.
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Submitted 7 September, 2010; v1 submitted 6 September, 2010;
originally announced September 2010.
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Single Spin Detection with a Carbon Nanotube Double Quantum Dot
Authors:
S. J. Chorley,
G. Giavaras,
J. Wabnig,
G. A. C. Jones,
C. G. Smith,
G. A. D. Briggs,
M. R. Buitelaar
Abstract:
Spin qubits defined in carbon nanotube quantum dots are of considerable interest for encoding and manipulating quantum information because of the long electron spin coherence times expected. However, before carbon nanotubes can find applications in quantum information processing schemes, we need to understand and control the coupling between individual electron spins and the interaction between th…
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Spin qubits defined in carbon nanotube quantum dots are of considerable interest for encoding and manipulating quantum information because of the long electron spin coherence times expected. However, before carbon nanotubes can find applications in quantum information processing schemes, we need to understand and control the coupling between individual electron spins and the interaction between the electron spins and their environment. Here we make use of spin selection rules to directly measure - and demonstrate control of - the singlet-triplet exchange coupling between two carbon nanotube quantum dots. We furthermore elucidate the effects of spin-orbit interaction on the electron transitions and investigate the interaction of the quantum dot system with a single impurity spin - the ultimate limit in spin sensitivity.
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Submitted 25 April, 2010;
originally announced April 2010.
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Charge and spin state readout of a double quantum dot coupled to a resonator
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive techniqu…
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State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive technique for measuring charge and spin states in quantum dot systems without requiring a separate mesoscopic detector.
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Submitted 22 April, 2010;
originally announced April 2010.
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Scanning gate microscopy of current-annealed single layer graphene
Authors:
M. R. Connolly,
K. L. Chiou,
C. G. Smith,
D. Anderson,
G. A. C. Jones,
A. Lombardo,
A. Fasoli,
A. C. Ferrari
Abstract:
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we stil…
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We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.
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Submitted 20 November, 2009; v1 submitted 19 November, 2009;
originally announced November 2009.
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Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using p…
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We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency whilst varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.
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Submitted 14 July, 2009;
originally announced July 2009.
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Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact
Authors:
M. C. Cassidy,
A. S. Dzurak,
R. G. Clark,
K. D. Petersson,
I. Farrer,
D. A. Ritchie,
C. G. Smith
Abstract:
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC c…
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We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC compares favorably with rf-SET electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast timescales.
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Submitted 6 July, 2009;
originally announced July 2009.
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Pauli spin blockade in carbon nanotube double quantum dots
Authors:
M. R. Buitelaar,
J. Fransson,
A. L. Cantone,
C. G. Smith,
D. Anderson,
G. A. C. Jones,
A. Ardavan,
A. N. Khlobystov,
A. A. R. Watt,
K. Porfyrakis,
G. A. D. Briggs
Abstract:
We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of the quantum dots to the leads. The measured differential conductance agrees well with a theoretical model of a double quantum dot system in the spin-blockade…
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We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of the quantum dots to the leads. The measured differential conductance agrees well with a theoretical model of a double quantum dot system in the spin-blockade regime which allows us to estimate the occupation probabilities of the relevant singlet and triplet states. This work shows that effective spin-to-charge conversion in nanotube quantum dots is feasible and opens the possibility of single-spin readout in a material that is not limited by hyperfine interaction with nuclear spins.
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Submitted 27 May, 2008;
originally announced May 2008.
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Charge pum** in carbon nanotube quantum dots
Authors:
M. R. Buitelaar,
V. Kashcheyevs,
P. J. Leek,
V. I. Talyanskii,
C. G. Smith,
D. Anderson,
G. A. C. Jones,
J. Wei,
D. H. Cobden
Abstract:
We investigate charge pum** in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency and direction and develop a model in which our resu…
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We investigate charge pum** in carbon nanotube quantum dots driven by the electric field of a surface acoustic wave. We find that at small driving amplitudes, the pumped current reverses polarity as the conductance is tuned through a Coulomb blockade peak using a gate electrode. We study the behavior as a function of wave amplitude, frequency and direction and develop a model in which our results can be understood as resulting from adiabatic charge redistribution between the leads and quantum dots on the nanotube.
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Submitted 20 April, 2008;
originally announced April 2008.
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Fano effect and Kondo effect in quantum dots formed in strongly coupled quantum wells
Authors:
A. W. Rushforth,
C. G. Smith,
I. Farrer,
D. A. Ritchie,
G. A. C. Jones,
D. Anderson,
M. Pepper
Abstract:
We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two strongly coupled dots. When the tunnel barriers in the upper well are reduced we observe the Fano effect due to the interfering paths through a resonant state in…
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We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlGaAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two strongly coupled dots. When the tunnel barriers in the upper well are reduced we observe the Fano effect due to the interfering paths through a resonant state in the lower well and a continuum state in the upper well. In both regimes an in plane magnetic field reduces the coupling between the wells when the magnetic length is comparable to the center to center separation of the wells. We also observe the Kondo effect which allows the spin states of the double dot system to be probed.
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Submitted 9 February, 2006;
originally announced February 2006.
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Non-invasive detection of the evolution of the charge states of a double dot system
Authors:
A. W. Rushforth,
C. G. Smith,
M. D. Godfrey,
H. E. Beere,
D. A. Ritchie,
M. Pepper
Abstract:
Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation where they are isolated from the leads. Our measurements allow us to identify the movement of electrons between the dots and we can also identify the presenc…
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Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation where they are isolated from the leads. Our measurements allow us to identify the movement of electrons between the dots and we can also identify the presence of a charge trap in our system by detecting the movement of electrons between the dots and the charge trap. The data also reveals evidence of electrons moving between the dots via excited states of either the single dots or the double dot molecule.
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Submitted 2 February, 2004;
originally announced February 2004.
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Imaging Fractal Conductance Fluctuations and Scarred Wave Functions in a Quantum Billiard
Authors:
R. Crook,
C. G. Smith,
A. C. Graham,
I. Farrer,
H. E. Beere,
D. A. Ritchie
Abstract:
We present scanning-probe images and magnetic-field plots which reveal fractal conductance fluctuations in a quantum billiard. The quantum billiard is drawn and tuned using erasable electrostatic lithography, where the scanning probe draws patterns of surface charge in the same environment used for measurements. A periodicity in magnetic field, which is observed in both the images and plots, sug…
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We present scanning-probe images and magnetic-field plots which reveal fractal conductance fluctuations in a quantum billiard. The quantum billiard is drawn and tuned using erasable electrostatic lithography, where the scanning probe draws patterns of surface charge in the same environment used for measurements. A periodicity in magnetic field, which is observed in both the images and plots, suggests the presence of classical orbits. Subsequent high-pass filtered high-resolution images resemble the predicted probability density of scarred wave functions, which describe the classical orbits.
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Submitted 27 October, 2003;
originally announced October 2003.
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Three Key Questions on Fractal Conductance Fluctuations: Dynamics, Quantization and Coherence
Authors:
A. P. Micolich,
R. P. Taylor,
T. P. Martin,
R. Newbury,
T. M. Fromhold,
A. G. Davies,
H. Linke,
W. R. Tribe,
L. D. Macks,
C. G. Smith,
E. H. Linfield,
D. A. Ritchie
Abstract:
Recent investigations of fractal conductance fluctuations (FCF) in electron billiards reveal crucial discrepancies between experimental behavior and the semiclassical Landauer-Buttiker (SLB) theory that predicted their existence. In particular, the roles played by the billiard's geometry, potential profile and the resulting electron trajectory distribution are not well understood. We present mea…
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Recent investigations of fractal conductance fluctuations (FCF) in electron billiards reveal crucial discrepancies between experimental behavior and the semiclassical Landauer-Buttiker (SLB) theory that predicted their existence. In particular, the roles played by the billiard's geometry, potential profile and the resulting electron trajectory distribution are not well understood. We present measurements on two custom-made devices - a 'disrupted' billiard device and a 'bilayer' billiard device - designed to probe directly these three characteristics. Our results demonstrate that intricate processes beyond those proposed in the SLB theory are required to explain FCF.
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Submitted 18 April, 2004; v1 submitted 22 June, 2003;
originally announced June 2003.