Showing 1–50 of 53 results for author: Smet, J H

Non-linear Landau fan diagram for graphene electrons exposed to a moiré potential

Authors: Pilkyung Moon, Youngwook Kim, Mikito Koshino, Takashi Taniguchi, Kenji Watanabe, Jurgen H. Smet

Abstract: Due to Landau quantization, the conductance of two-dimensional electrons exposed to a perpendicular magnetic field exhibits oscillations that generate a fan of linear trajectories when plotted in the parameter space spanned by density and magnetic field. This fan looks identical irrespective of the electron dispersion details that determines the field dependence of the Landau level energy. This is… ▽ More Due to Landau quantization, the conductance of two-dimensional electrons exposed to a perpendicular magnetic field exhibits oscillations that generate a fan of linear trajectories when plotted in the parameter space spanned by density and magnetic field. This fan looks identical irrespective of the electron dispersion details that determines the field dependence of the Landau level energy. This is no surprise, since the position of conductance minima solely depends on the level degeneracy which is linear in flux. The fractal energy spectrum that emerges within each Landau band when electrons are also exposed to a two-dimensional superlattice potential produces numerous additional oscillations, but they too create just linear fans for the same reason. Here, we report on conductance oscillations of graphene electrons exposed to a moiré potential that defy this general rule of flux linearity and attribute the anomalous behavior to the simultaneous occupation of multiple minibands and magnetic breakdown. △ Less

Submitted 27 November, 2023; originally announced November 2023.

Journal ref: Nano Letters (2024)

Orbitally controlled quantum Hall states in decoupled two-bilayer graphene sheets

Authors: Soyun Kim, Dohun Kim, Kenji Watanabe, Takashi Taniguchi, Jurgen. H. Smet, Youngwook Kim

Abstract: We report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, we suppress single particle tunneling between both bilayers. Since the bilayers are spatially separated by only 0.34 nm, the stack benefits from strong interlayer Coulomb interactions. These interactions can cause the formation o… ▽ More We report on integer and fractional quantum Hall states in a stack of two twisted Bernal bilayer graphene sheets. By exploiting the momentum mismatch in reciprocal space, we suppress single particle tunneling between both bilayers. Since the bilayers are spatially separated by only 0.34 nm, the stack benefits from strong interlayer Coulomb interactions. These interactions can cause the formation of a Bose-Einstein condensate. Indeed, such a condensate is observed for half filling in each bilayer sheet. However, only when the partially filled levels have orbital index 1. It is absent for partially filled levels with orbital index 0. This discrepancy is tentatively attributed to the role of skyrmion/anti-skyrmion pair excitations and the dependence of the energy of these excitations on the orbital index. The application of asymmetric top and bottom gate voltages enables to influence the orbital nature of the electronic states of the graphene bilayers at the chemical potential and to navigate in an orbital mixed space. The latter hosts an even denominator fractional quantum Hall state at total filling -3/2. Our observations suggest a unique edge reconstruction involving both electrons and chiral p-wave composite fermions. △ Less

Submitted 6 June, 2023; originally announced June 2023.

Journal ref: Advanced Science (2023)

Resonant Inelastic X-ray Scattering from Electronic Excitations in $α$-RuCl$_3$ Nanolayers

Authors: Zichen Yang, Lichen Wang, Sourav Laha, Dong Zhao, Mingdi Luo, Achim Güth, Takashi Taniguchi, Kenji Watanabe, Bettina V. Lotsch, Jurgen H. Smet, Matteo Minola, Hlynur Gretarsson, Bernhard Keimer

Abstract: We present Ru $L_3$-edge resonant inelastic x-ray scattering (RIXS) measurements of spin-orbit and d-d excitations in exfoliated nanolayers of the Kitaev spin-liquid candidate RuCl$_3$. Whereas the spin-orbit excitations are independent of thickness, we observe a pronounced red-shift and broadening of the d-d excitations in layers with thickness below $\sim$7 nm. Aided by model calculations, we at… ▽ More We present Ru $L_3$-edge resonant inelastic x-ray scattering (RIXS) measurements of spin-orbit and d-d excitations in exfoliated nanolayers of the Kitaev spin-liquid candidate RuCl$_3$. Whereas the spin-orbit excitations are independent of thickness, we observe a pronounced red-shift and broadening of the d-d excitations in layers with thickness below $\sim$7 nm. Aided by model calculations, we attribute these effects to distortions of the RuCl$_6$ octahedra near the surface. Our study paves the way towards RIXS investigations of electronic excitations in various other 2D materials and heterostructures. △ Less

Submitted 9 March, 2023; originally announced March 2023.

Gate-tuned ambipolar superconductivity with strong pairing interaction in intrinsic gapped monolayer 1T'-MoTe2

Authors: Fangdong Tang, Peipei Wang, Yuan Gan, Jian lyu, Qixing Wang, Xinrun Mi, Mingquan He, Liyuan Zhang, Jurgen H. Smet

Abstract: Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic do**. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both… ▽ More Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic do**. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8K for both charge carrier types. This temperature is much higher than in bulk samples. Also the in-plane upper critical field is strongly enhanced and exceeds the BCS Pauli limit in both cases. Gap information is extracted using point-contact spectroscopy. The gap ratio exceeds multiple times the value expected for BCS weak-coupling. All these observations suggest a strong enhancement of the pairing interaction. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Odd integer quantum Hall states with interlayer coherence in twisted bilayer graphene

Authors: Youngwook Kim, Pilkyung Moon, Kenji Watanabe, Takashi Taniguchi, Jurgen H. Smet

Abstract: We report on the quantum Hall effect in two stacked graphene layers rotated by 2 degree. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density. Odd-integer quantum Hall physics is not anticipated in the regime of suppressed tunneling for balanced layer densities, yet it is observed. We interpret this as a sign… ▽ More We report on the quantum Hall effect in two stacked graphene layers rotated by 2 degree. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density. Odd-integer quantum Hall physics is not anticipated in the regime of suppressed tunneling for balanced layer densities, yet it is observed. We interpret this as a signature of Coulomb interaction induced interlayer coherence and Bose Einstein condensation of excitons that form at half filling of each layer. A density imbalance gives rise to reentrant behavior due to a phase transition from the interlayer coherent state to incompressible behavior caused by simultaneous condensation of both layers in different quantum Hall states. With increasing overall density, magnetic breakdown gains the upper hand. As a consequence of the enhanced interlayer tunneling, the interlayer coherent state and the phase transition vanish. △ Less

Submitted 5 May, 2021; v1 submitted 4 May, 2021; originally announced May 2021.

Comments: accepted in Nano Letters

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

Authors: Joseph Falson, Inti Sodemann, Brian Skinner, Daniela Tabrea, Yusuke Kozuka, Atsushi Tsukazaki, Masashi Kawasaki, Klaus von Klitzing, Jurgen H Smet

Abstract: The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comp… ▽ More The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Rectification by hydrodynamic flow in an encapsulated graphene Tesla valve

Authors: Johannes Geurs, Youngwook Kim, Kenji Watanabe, Takashi Taniguchi, Pilkyung Moon, Jurgen H. Smet

Abstract: Systems in which interparticle interactions prevail can be described by hydrodynamics. This regime is typically difficult to access in the solid state for electrons. However, the high purity of encapsulated graphene combined with its advantageous phonon properties make it possible, and hydrodynamic corrections to the conductivity of graphene have been observed. Examples include electron whirlpools… ▽ More Systems in which interparticle interactions prevail can be described by hydrodynamics. This regime is typically difficult to access in the solid state for electrons. However, the high purity of encapsulated graphene combined with its advantageous phonon properties make it possible, and hydrodynamic corrections to the conductivity of graphene have been observed. Examples include electron whirlpools, enhanced flow through constrictions as well as a Poiseuille flow profile. An electronic device relying specifically on viscous behaviour and acting as a viscometer has however been lacking. Here, we implement the analogue of the Tesla valve. It exhibits nonreciprocal transport and can be regarded as an electronic viscous diode. Rectification occurs at carrier densities and temperatures consistent with the hydrodynamic regime, and disappears both in the ballistic and diffusive transport regimes. In a device in which the electrons are exposed to a Moiré superlattice, the Lifshitz transition when crossing the Van Hove singularity is observed in the rectifying behaviour. △ Less

Submitted 11 August, 2020; originally announced August 2020.

Comments: 7 pages, 4 figures + supplement. Submitted

Acousto-electric study of microwave-induced current domains

Authors: Benedikt Friess, Ivan A. Dmitriev, Vladimir Umansky, Loren Pfeiffer, Ken West, Klaus von Klitzing, Jurgen H. Smet

Abstract: Surface Acoustic Waves (SAW) have been utilized to investigate the properties of a two-dimensional electron system, subjected to a perpendicular magnetic field and monochromatic microwave radiation, in the regime where the so-called microwave-induced zero-resistance states form. Contrary to conventional magneto-transport in Hall bar and van der Pauw geometries, the collimated SAW beam probes only… ▽ More Surface Acoustic Waves (SAW) have been utilized to investigate the properties of a two-dimensional electron system, subjected to a perpendicular magnetic field and monochromatic microwave radiation, in the regime where the so-called microwave-induced zero-resistance states form. Contrary to conventional magneto-transport in Hall bar and van der Pauw geometries, the collimated SAW beam probes only the bulk of the electronic system exposed to this wave. Clear signatures appear in the SAW propagation velocity corroborating that neither contacts, nor sample edges are a root source for their emergence. By virtue of the directional nature of this probing method and with the assistance of theoretical modelling, we were also able to demonstrate that the SAW response depends on the angle between its propagation vector and the orientation of domains which spontaneously form when zero-resistance is observed in transport. This confirms in unprecedented manner the formation of an inhomogeneous phase under these non-equilibrium conditions. △ Less

Submitted 2 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. Lett. 124, 117601 (2020)

Anomalously large spin-current voltages on the surface of SmB$_6$

Authors: Johannes Geurs, Gihun Ryu, Chengtian Lin, Jurgen H. Smet

Abstract: The spin-polarized surface states of topological insulators have attracted interest both from a fundamental and applied point of view. A recent proposal describes a method of probing these surface states with ferromagnetic contacts, which was subsequently applied to a variety of materials. In this study, we use this method on the potential topological insulator SmB$_6$ with a new design based on t… ▽ More The spin-polarized surface states of topological insulators have attracted interest both from a fundamental and applied point of view. A recent proposal describes a method of probing these surface states with ferromagnetic contacts, which was subsequently applied to a variety of materials. In this study, we use this method on the potential topological insulator SmB$_6$ with a new design based on the Corbino geometry. Though the signal behaves as predicted for all orientations of current and magnetic field, its magnitude is much larger than expected. Possible parasitic effects such as stray field-induced Hall voltages are excluded, leaving the origin of the observations uncertain. This corroborates the need for careful analysis when interpreting results of similar experiments. △ Less

Submitted 26 July, 2019; originally announced July 2019.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 100, 035435 (2019)

Spin-split band hybridization in graphene proximitized with $α$-RuCl$_3$ nanosheets

Authors: Soudabeh Mashhadi, Youngwook Kim, Jeongwoo Kim, Daniel Weber, Takashi Taniguchi, Kenji Watanabe, Noejung Park, Bettina Lotsch, Jurgen H. Smet, Marko Burghard, Klaus Kern

Abstract: Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromagnetic insulators has been experimentally established. However, only very little is known about graphene's interaction with antiferromagnetic insulators. Here, we report a low temperature study of the electronic propertie… ▽ More Proximity effects induced in the 2D Dirac material graphene potentially open access to novel and intriguing physical phenomena. Thus far, the coupling between graphene and ferromagnetic insulators has been experimentally established. However, only very little is known about graphene's interaction with antiferromagnetic insulators. Here, we report a low temperature study of the electronic properties of high quality van der Waals heterostructures composed of a single graphene layer proximitized with $α$-RuCl$_3$. The latter is known to become antiferromagnetically ordered below 10 K. Shubnikov de Haas oscillations in the longitudinal resistance together with Hall resistance measurements provide clear evidence for a band realignment that is accompanied by a transfer of electrons originally occupying the graphene's spin degenerate Dirac cones into $α$-RuCl$_3$ band states with in-plane spin polarization. Left behind are holes in two separate Fermi pockets, only the dispersion of one of which is distorted near the Fermi energy due to spin selective hybridization with these spin polarized $α$-RuCl$_3$ band states. This interpretation is supported by our DFT calculations. An unexpected dam** of the quantum oscillations as well as a zero field resistance upturn close to the N$é$el temperature of $α$-RuCl$_3$ suggests the onset of additional spin scattering due to spin fluctuations in the $α$-RuCl$_3$. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Journal ref: Nano Letters 2019

Single spin resonance in a van der Waals embedded paramagnetic defect

Authors: Nathan Chejanovsky, Amlan Mukherjee, Youngwook Kim, Andrej Denisenko, Amit Finkler, Takashi Taniguchi, Kenji Watanabe, Durga Bhaktavatsala Rao Dasari, Jurgen H. Smet, Jörg Wrachtrup

Abstract: Spins constitute a group of quantum objects forming a key resource in modern quantum technology. Two-dimensional (2D) van der Waals materials are of fundamental interest for studying nanoscale magnetic phenomena. However, isolating singular paramagnetic spins in 2D systems is challenging. We report here on a quantum emitting source embedded within hexgonal boron nitride (h-BN) exhibiting optical m… ▽ More Spins constitute a group of quantum objects forming a key resource in modern quantum technology. Two-dimensional (2D) van der Waals materials are of fundamental interest for studying nanoscale magnetic phenomena. However, isolating singular paramagnetic spins in 2D systems is challenging. We report here on a quantum emitting source embedded within hexgonal boron nitride (h-BN) exhibiting optical magnetic resonance (ODMR). We extract an isotropic $g$ factor close to 2 and derive an upper bound for a zero field splitting (ZFS) ($\leq$ 4 MHz). Photoluminescence (PL) behavior under temperature cycling using different excitations is presented, assigning probable zero phonon lines (ZPLs) / phonon side band (PSBs) to emission peaks, compatible with h-BN's phonon density of states, indicating their intrinsic nature. Narrow and inhomogeneous broadened ODMR lines differ significantly from monoatomic vacancy defect lines known in literature. We derive a hyperfine coupling of around 10 MHz. Its angular dependence indicates an unpaired electron in an out-of-plane $π$-orbital, probably originating from an additional substitutional carbon impurity or other low mass atom. We determine the spin relaxation time $T_1$ to be around 17 $μ$s. △ Less

Submitted 13 June, 2019; originally announced June 2019.

Journal ref: Nat. Mater. (2021)

Reliable postprocessing improvement of van der Waals heterostructures

Authors: Youngwook Kim, Patrick Herlinger, Takashi Taniguchi, Kenji Watanabe, Jurgen H. Smet

Abstract: The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game changer in the field of low dimensional physics. For instance, the encapsulation of graphene or MoS2 between atomically flat hexagonal boron nitride (hBN) layers with strong affinity and graphitic gates that screen charge imp… ▽ More The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game changer in the field of low dimensional physics. For instance, the encapsulation of graphene or MoS2 between atomically flat hexagonal boron nitride (hBN) layers with strong affinity and graphitic gates that screen charge impurity disorder provided access to a plethora of interesting physical phenomena by drastically boosting the device quality. The encapsulation is accompanied by a self-cleansing effect at the interfaces. The otherwise predominant charged impurity disorder is minimized and random strain fluctuations ultimately constitute the main source of residual disorder. Despite these advances, the fabricated heterostructures still vary notably in their performance. While some achieve record mobilities, others only possess mediocre quality. Here, we report a reliable method to improve fully completed van der Waals heterostructure devices with a straightforward post-processing surface treatment based on thermal annealing and contact mode AFM. The impact is demonstrated by comparing magnetotransport measurements before and after the AFM treatment on one and the same device as well as on a larger set of treated and untreated devices to collect device statistics. Both the low temperature properties as well as the room temperature electrical characteristics, as relevant for applications, improve on average substantially. We surmise that the main beneficial effect arises from reducing nanometer scale corrugations at the interfaces, i.e. the detrimental impact of random strain fluctuations. △ Less

Submitted 14 December, 2019; v1 submitted 25 March, 2019; originally announced March 2019.

Journal ref: ACS Nano (2019)

Type-II Ising Pairing in Few-Layer Stanene

Authors: Joseph Falson, Yong Xu, Menghan Liao, Yunyi Zang, Ke**g Zhu, Chong Wang, Zetao Zhang, Hongchao Liu, Wenhui Duan, Ke He, Haiwen Liu, Jurgen H. Smet, Ding Zhang, Qi-Kun Xue

Abstract: Spin-orbit coupling has proven indispensable in realizing topological materials and more recently Ising pairing in two-dimensional superconductors. This pairing mechanism relies on inversion symmetry breaking and sustains anomalously large in-plane polarizing magnetic fields whose upper limit is expected to diverge at low temperatures, although experimental demonstration of this has remained elusi… ▽ More Spin-orbit coupling has proven indispensable in realizing topological materials and more recently Ising pairing in two-dimensional superconductors. This pairing mechanism relies on inversion symmetry breaking and sustains anomalously large in-plane polarizing magnetic fields whose upper limit is expected to diverge at low temperatures, although experimental demonstration of this has remained elusive due to the required fields. In this work, the recently discovered superconductor few-layer stanene, i.e. epitaxially strained $α$-Sn, is shown to exhibit a new type of Ising pairing between carriers residing in bands with different orbital indices near the $Γ$-point. The bands are split as a result of spin-orbit locking without the participation of inversion symmetry breaking. The in-plane upper critical field is strongly enhanced at ultra-low temperature and reveals the sought for upturn. △ Less

Submitted 18 March, 2019; originally announced March 2019.

Even denominator fractional quantum Hall states in higher Landau levels of graphene

Authors: Youngwook Kim, Ajit C. Balram, Takashi Taniguchi, Kenji Watanabe, Jainendra K. Jain, Jurgen H. Smet

Abstract: An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index $n = 1$ of two dimensional electrons in a GaAs quantum well originates from a chiral $p$-wave paired state of composite fermions which are topological bound states of electrons and quantized vortices. This state is theoretically descri… ▽ More An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index $n = 1$ of two dimensional electrons in a GaAs quantum well originates from a chiral $p$-wave paired state of composite fermions which are topological bound states of electrons and quantized vortices. This state is theoretically described by a "Pfaffian" wave function or its hole partner called the anti-Pfaffian, whose excitations are neither fermions nor bosons but Majorana quasiparticles obeying non-Abelian braid statistics. This has inspired ideas on fault-tolerant topological quantum computation and has also instigated a search for other states with exotic quasiparticles. Here we report experiments on monolayer graphene that show clear evidence for unexpected even-denominator fractional quantum Hall physics in the $n=3$ Landau level. We numerically investigate the known candidate states for the even-denominator fractional quantum Hall effect, including the Pfaffian, the particle-hole symmetric Pfaffian, and the 221-parton states, and conclude that, among these, the 221-parton appears a potentially suitable candidate to describe the experimentally observed state. Like the Pfaffian, this state is believed to harbour quasi-particles with non-Abelian braid statistics △ Less

Submitted 24 October, 2019; v1 submitted 22 July, 2018; originally announced July 2018.

Journal ref: Nature Physics 15, 154 (2019)

A cascade of phase transitions in an orbitally mixed half-filled Landau level

Authors: J. Falson, D. Tabrea, D. Zhang, I. Sodemann, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. H. Smet

Abstract: Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the gro… ▽ More Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the ground states at filling factor $ν$ = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the $N$ = 1 level and a compressible phase in N = 0, along with an unexpected Fermi-liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability ZnO offers for exploring exotic fractionalized electronic phases. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Journal ref: Science Advances 4, eaat8742 (2018)

Characterization of individual layers in a bilayer electron system produced in a wide quantum well

Authors: S. I. Dorozhkin, A. A. Kapustin, I. B. Fedorov, V. Umansky, K. von Klitzing, J. H. Smet

Abstract: Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of… ▽ More Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system. △ Less

Submitted 29 December, 2017; originally announced December 2017.

Comments: submitted to Journal of Applied Physics

Quantum light in curved low dimensional hexagonal boron nitride systems

Authors: Nathan Chejanovsky, Youngwook Kim, Andrea Zappe, Benjamin Stuhlhofer, Takashi Taniguchi, Kenji Watanabe, Durga Bhaktavatsala Rao Dasari, Amit Finkler, Jurgen H. Smet, Jörg Wrachtrup

Abstract: Low-dimensional wide bandgap semiconductors open a new playing field in quantum optics using sub-bandgap excitation. In this field, hexagonal boron nitride (h-BN) has been reported to host single quantum emitters (QEs), linking QE density to perimeters. Furthermore, curvature/perimeters in transition metal dichalcogenides (TMDCs) have demonstrated a key role in QE formation. We investigate a curva… ▽ More Low-dimensional wide bandgap semiconductors open a new playing field in quantum optics using sub-bandgap excitation. In this field, hexagonal boron nitride (h-BN) has been reported to host single quantum emitters (QEs), linking QE density to perimeters. Furthermore, curvature/perimeters in transition metal dichalcogenides (TMDCs) have demonstrated a key role in QE formation. We investigate a curvature-abundant BN system - quasi one-dimensional BN nanotubes (BNNTs) fabricated via a catalyst-free method. We find that non-treated BNNT is an abundant source of stable QEs and analyze their emission features down to single nanotubes, comparing dispersed/suspended material. Combining high spatial resolution of a scanning electron microscope, we categorize and pin-point emission origin to a scale of less than 20 nm, giving us a one-to-one validation of emission source with dimensions smaller than the laser excitation wavelength, elucidating nano-antenna effects. Two emission origins emerge: hybrid/entwined BNNT. By artificially curving h-BN flakes, similar QE spectral features are observed. The impact on emission of solvents used in commercial products and curved regions is also demonstrated. The 'out of the box' availability of QEs in BNNT, lacking processing contamination, is a milestone for unraveling their atomic features. These findings open possibilities for precision engineering of QEs, puts h-BN under a similar 'umbrella' of TMDC's QEs and provides a model explaining QEs spatial localization/formation using electron/ion irradiation and chemical etching. △ Less

Submitted 15 November, 2017; v1 submitted 28 April, 2017; originally announced May 2017.

Comments: updated abstract

Journal ref: Scientific Reports 7, Article number: 14758 (2017)

Ultrafast lithium diffusion in bilayer graphene

Authors: M. Kühne, F. Paolucci, J. Popovic, P. M. Ostrovsky, J. Maier, J. H. Smet

Abstract: Solid mixed conductors with significant ionic as well as electronic conduction play a pivotal role for mass transfer and storage as required in battery electrodes. Single-phase materials with simultaneously high electronic and ionic conductivity at room temperature are hard to come by and therefore multi-phase systems with separate ion and electron channels have been put forward instead. Here, we… ▽ More Solid mixed conductors with significant ionic as well as electronic conduction play a pivotal role for mass transfer and storage as required in battery electrodes. Single-phase materials with simultaneously high electronic and ionic conductivity at room temperature are hard to come by and therefore multi-phase systems with separate ion and electron channels have been put forward instead. Here, we explore bilayer graphene as a true single phase mixed conductor and demonstrate ultrafast lithium diffusion exceeding diffusion in bulk graphite by an order of magnitude and even surpassing diffusion of sodium chloride in liquid water. To this end, an innovative electrochemical cell architecture has been developed where the redox-reaction forcing lithium intercalation is localized at a protrusion of the device only. Its remainder consists of pristine bilayer graphene unperturbed by an electrolyte. The geometry lends itself to the use of magnetotransport machinery known from mesoscopic low-dimensional physics. Time dependent Hall measurements across spatially displaced Hall probes deliver a direct view on the in-plane diffusion kinetics. The device layout with a perimeterial electrochemical cell is transferable to other 2D materials as well as thin films and may promote a paradigm shift on the use of electrolytes in on-chip experiments. △ Less

Submitted 9 January, 2017; originally announced January 2017.

Comments: main text 18 pages including 5 figures; supplementary information 7 pages including 4 figures

Journal ref: Nature Nanotechnology 12, 895-900 (2017)

Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States

Authors: S. I. Dorozhkin, A. A. Kapustin, V. Umansky, K. von Klitzing, J. H. Smet

Abstract: In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system… ▽ More In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: submitted to Phys.Rev.Lett., corresponding author S. I. Dorozhkin

Journal ref: Phys. Rev. Lett. 117, 176801 (2016)

Negative permittivity attests to local attractive interactions in bubble and stripe phases

Authors: Benedikt Friess, Yang Peng, Bernd Rosenow, Felix von Oppen, Vladimir Umansky, Klaus von Klitzing, Jurgen H. Smet

Abstract: The physics of itinerant electrons in condensed matter is by and large governed by repulsive Coulomb forces. However, rare cases exist where local attractive interactions emerge and prevail in determining the ground state of the system despite the dominant Coulomb repulsion. The most notable example is no doubt electron pairing, which leads to superconductivity and is mediated by electron phonon c… ▽ More The physics of itinerant electrons in condensed matter is by and large governed by repulsive Coulomb forces. However, rare cases exist where local attractive interactions emerge and prevail in determining the ground state of the system despite the dominant Coulomb repulsion. The most notable example is no doubt electron pairing, which leads to superconductivity and is mediated by electron phonon coupling or more intricate mechanisms such as antiferromagnetic spin order in high-temperature superconductors. The interplay of attractive and repulsive interaction components may also instigate spontaneous symmetry lowering and clustering of charges in geometric patterns such as bubbles and stripes, provided these interactions act on different length scales. In high-temperature superconductors, for instance, fluctuating stripe or nematic ordering is intertwined with superconductivity itself. Both types of attractive interaction based physics, pairing and charge ordering, are also at play in high-quality two-dimensional electron systems exposed to a quantizing perpendicular magnetic field for electrons describing larger orbits. This has been concluded indirectly from the transport behaviour when such phases form. An unambiguous manifestation of an underlying attractive interaction between the electrons has however remained elusive. Here we report the observation of a negative permittivity as an immediate consequence of local attractive interaction rather than repulsion among the electrons when bubble and stripe phases form. The implemented technique based on surface acoustic waves offers directionality and confirms the stripe phase to be a strongly anisotropic medium. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: Full supplementary information will be available with final publication

Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride

Authors: Nathan Chejanovsky, Mohammad Rezai, Federico Paolucci, Youngwook Kim, Torsten Rendler, Wafa Rouabeh, Felipe Fávaro de Oliveira, Patrick Herlinger, Andrej Denisenko, Sen Yang, Ilja Gerhardt, Amit Finkler, Jurgen H. Smet, Jörg Wrachtrup

Abstract: Newly discovered van der Waals materials like MoS$_2$, WSe$_2$, hexagonal boron nitride (h-BN), and recently $\mathrm{C}_2\mathrm{N}$ have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of great interest are 2D materials that host single quantum emitters. h-BN, with a band gap of 5.95 eV, has been shown to host single quantum emitters which are stable… ▽ More Newly discovered van der Waals materials like MoS$_2$, WSe$_2$, hexagonal boron nitride (h-BN), and recently $\mathrm{C}_2\mathrm{N}$ have sparked intensive research to unveil the quantum behavior associated with their 2D structure. Of great interest are 2D materials that host single quantum emitters. h-BN, with a band gap of 5.95 eV, has been shown to host single quantum emitters which are stable at room temperature in the UV and visible spectral range. In this paper we investigate correlations between h-BN structural features and emitter location from bulk down to the monolayer at room temperature. We demonstrate that chemical etching and ion irradiation can generate emitters in h-BN. We analyze the emitters' spectral features and show that they are dominated by the interaction of their electronic transition with a single Raman active mode of h-BN. Photodynamics analysis reveals diverse rates between the electronic states of the emitter. The emitters show excellent photo stability even under ambient conditions and in monolayers. Comparing the excitation polarization between different emitters unveils a connection between defect orientation and the h-BN hexagonal structure. The sharp spectral features, color diversity, room-temperature stability, long-lived metastable states, ease of fabrication, proximity of the emitters to the environment, outstanding chemical stability, and biocompatibility of h-BN provide a completely new class of systems that can be used for sensing and quantum photonics applications. △ Less

Submitted 6 October, 2016; v1 submitted 10 August, 2016; originally announced August 2016.

Comments: In Nano Letters, ACS, 2016. Title change. Revision according to peer-review report. SI can be downloaded from http://pubs.acs.org/doi/suppl/10.1021/acs.nanolett.6b03268/suppl_file/nl6b03268_si_001.pdf

Charge inversion and topological phase transition at a twist angle induced van Hove singularity of bilayer graphene

Authors: Youngwook Kim, Patrick Herlinger, Pilkyung Moon, Mikito Koshino, Takashi Taniguchi, Kenji Watanabe, Jurgen. H Smet

Abstract: Van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical point the Fermi surface connectivity changes and topological properties undergo a transition. Opportunities to systematically pass a VHS at the turn of a voltage knob and study its diverse impact are however rare. With t… ▽ More Van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical point the Fermi surface connectivity changes and topological properties undergo a transition. Opportunities to systematically pass a VHS at the turn of a voltage knob and study its diverse impact are however rare. With the advent of van der Waals heterostructures, control over the atomic registry of neigbouring graphene layers offers an unprecedented tool to generate a low energy VHS easily accessible with conventional gating. Here we have addressed magnetotransport when the chemical potential crosses the twist angle induced VHS in twisted bilayer graphene. A topological phase transition is experimentally disclosed in the abrupt conversion of electrons to holes or vice versa, a loss of a non-zero Berry phase and distinct sequences of integer quantum Hall states above and below the singularity. △ Less

Submitted 12 July, 2016; v1 submitted 18 May, 2016; originally announced May 2016.

Comments: Nano Lett, ASAP

Journal ref: Nano Lett., 16, 5053 (2016)

Disorder Enhanced Nuclear Spin Relaxation at Landau Level Filling Factor One

Authors: Tong Guan, Benedikt Friess, Yongqing Li, Shishen Yan, Vladimir Umansky, Klaus von Klitzing, Jurgen H. Smet

Abstract: The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed near the Landau level filling factor $ν=1$ in 1/$T_1$ versus $ν$. Both width and magnitude of the plateau increase with decreasing electron density. At low tem… ▽ More The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed near the Landau level filling factor $ν=1$ in 1/$T_1$ versus $ν$. Both width and magnitude of the plateau increase with decreasing electron density. At low temperatures, 1/$T_1$ exhibits an Arrhenius temperature dependence within the tilted plateau regime. The extracted energy gaps are up to two orders of magnitude smaller than the corresponding charge transport gaps. These results point to a nontrivial mechanism for the disorder enhanced nuclear spin relaxation, in which microscopic inhomogeneities play a key role for the low energy spin excitations related to skyrmions. △ Less

Submitted 10 April, 2015; v1 submitted 8 April, 2015; originally announced April 2015.

Comments: 7 pages, 4 figures

Journal ref: Chin. Phys. B 24, 067302 (2015)

Fractional Quantum Hall Phase Transitions and Four-flux Composite Fermions in Graphene

Authors: Benjamin E. Feldman, Andrei J. Levin, Benjamin Krauss, Dmitry Abanin, Bertrand. I. Halperin, Jurgen H. Smet, Amir Yacoby

Abstract: Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of controlled phase transitions among them. In especially clean samples, electron-electron interactions were recently shown to produce surprising patterns of symme… ▽ More Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich variety of broken-symmetry states and raises the prospect of controlled phase transitions among them. In especially clean samples, electron-electron interactions were recently shown to produce surprising patterns of symmetry breaking and phase transitions in the integer quantum Hall regime. Although a series of robust fractional quantum Hall states was also recently observed in graphene, their rich phase diagram and tunability have yet to be fully explored. Here we report local electronic compressibility measurements of ultraclean suspended graphene that reveal a multitude of fractional quantum Hall states surrounding filling factors v = -1/2 and -1/4. In several of these states, we observe phase transitions that indicate abrupt changes in the underlying order and are marked by a narrow region of negative compressibility that cuts across the incompressible peak. Remarkably, as filling factor approaches v = -1/2, we observe additional oscillations in compressibility that appear to be related to the phase transitions and persist to within 2.5% of v = -1/2. We use a simple model based on crossing Landau levels of composite particles with different internal degrees of freedom to explain many qualitative features of the experimental data. Our results add to the diverse array of correlated states observed in graphene and demonstrate substantial control over their order parameters, showing that graphene serves as an excellent platform to study correlated electron phases of matter. △ Less

Submitted 4 March, 2013; originally announced March 2013.

Journal ref: Phys. Rev. Lett. 111, 076802 (2013)

Current Induced Nuclear Spin Depolarization at Landau Level Filling Factor nu=1/2

Authors: Y. Q. Li, V. Umansky, K. von Klitzing, J. H. Smet

Abstract: Hyperfine interactions between electron and nuclear spins in the quantum Hall regime provide powerful means for manipulation and detection of nuclear spins. In this work we demonstrate that significant changes in nuclear spin polarization can be created by applying an electric current in a 2-dimensional electron system at Landau level filling factor nu=1/2. Electron spin transitions at nu= 2/3 and… ▽ More Hyperfine interactions between electron and nuclear spins in the quantum Hall regime provide powerful means for manipulation and detection of nuclear spins. In this work we demonstrate that significant changes in nuclear spin polarization can be created by applying an electric current in a 2-dimensional electron system at Landau level filling factor nu=1/2. Electron spin transitions at nu= 2/3 and 1/2 are utilized for the measurement of the nuclear spin polarization. Consistent results are obtained from these two different methods of nuclear magnetometry. The finite thickness of the electron wavefunction is found to be important even for a narrow quantum well. The current induced effect on nuclear spins can be attributed to electron heating and the efficient coupling between the nuclear and electron spin systems at nu=1/2. The electron temperature, elevated by the current, can be measured with a thermometer based on the measurement of the nuclear spin relaxation rate. The nuclear spin polarization follows a Curie law dependence on the electron temperature. This work also allows us to evaluate the electron g-factor in high magnetic fields as well as the polarization mass of composite fermions. △ Less

Submitted 10 May, 2012; originally announced May 2012.

Comments: 13 pages, 11 figures

Journal ref: Physical Review B 86, 115421 (2012)

Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene

Authors: Dong Su Lee, Viera Skakalova, R. Thomas Weitz, Klaus von Klitzing, Jurgen H. Smet

Abstract: Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field effect transistor reflect charge localization phenomena on the nanometer scale due to the formation of a dot network which forms near incompressible quantum st… ▽ More Transport measurements normally provide a macroscopic, averaged view of the sample, so that disorder prevents the observation of fragile interaction induced states. Here, we demonstrate that transconductance fluctuations in a graphene field effect transistor reflect charge localization phenomena on the nanometer scale due to the formation of a dot network which forms near incompressible quantum states. These fluctuations give access to fragile broken-symmetry and fractional quantum Hall states even though these states remain hidden in conventional magnetotransport quantities. △ Less

Submitted 17 April, 2012; originally announced April 2012.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 109, 056602 (2012)

How branching can change the conductance of ballistic semiconductor devices

Authors: D. Maryenko, J. J. Metzger, F. Ospald, V. Umansky, R. Fleischmann, T. Geisel, K. von Klitzing, J. H. Smet

Abstract: We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we… ▽ More We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential. △ Less

Submitted 17 April, 2012; originally announced April 2012.

Comments: accepted for publication in Phys. Rev. B

Unconventional Sequence of Fractional Quantum Hall States in Suspended Graphene

Authors: Benjamin E. Feldman, Benjamin Krauss, Jurgen H. Smet, Amir Yacoby

Abstract: Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two dimensions under the influence of a strong magnetic field generate excitations with fractional charge. Graphene provides a platform to study unique many-body eff… ▽ More Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two dimensions under the influence of a strong magnetic field generate excitations with fractional charge. Graphene provides a platform to study unique many-body effects due to its massless chiral charge carriers and the fourfold degeneracy that arises from their spin and valley degrees of freedom. Here we report local electronic compressibility measurements of a suspended graphene flake performed using a scanning single-electron transistor. Between Landau level filling v = 0 and 1, we observe incompressible fractional quantum Hall states that follow the standard composite fermion sequence v = p/(2p \pm 1) for all integer p \leq 4. In contrast, incompressible behavior occurs only at v = 4/3, 8/5, 10/7 and 14/9 between v = 1 and 2. These fractions correspond to a subset of the standard composite fermion sequence involving only even numerators, suggesting a robust underlying symmetry. We extract the energy gaps associated with each fractional quantum Hall state as a function of magnetic field. The states at v = 1/3, 2/3, 4/3 and 8/5 are the strongest at low field, and persist below 1.5 T. The unusual sequence of incompressible states provides insight into the interplay between electronic correlations and SU(4) symmetry in graphene. △ Less

Submitted 24 January, 2012; originally announced January 2012.

Journal ref: Science 337, 1196-1199 (2012)

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

Authors: J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet, Y. Q. Li

Abstract: We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the… ▽ More We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions. △ Less

Submitted 27 April, 2011; v1 submitted 5 April, 2011; originally announced April 2011.

Comments: 5 pages, 3 figures. For comments and questions, please contact: [email protected]

Journal ref: Phys. Rev. B 83, 241304(R) (2011)

Excitonic Fano Resonance in Freestanding Graphene

Authors: Dong-Hun Chae, Tobias Utikal, Siegfried Weisenburger, Harald Giessen, Klaus. v. Klitzing, Markus Lippitz, Jurgen H. Smet

Abstract: We investigate the role of electron-hole correlations in the absorption of freestanding monolayer and bilayer graphene using optical transmission spectroscopy from 1.5 to 5.5 eV. Line shape analysis demonstrates that the ultraviolet region is dominated by an asymmetric Fano resonance. We attribute this to an excitonic resonance that forms near the van-Hove singularity at the saddle point of the ba… ▽ More We investigate the role of electron-hole correlations in the absorption of freestanding monolayer and bilayer graphene using optical transmission spectroscopy from 1.5 to 5.5 eV. Line shape analysis demonstrates that the ultraviolet region is dominated by an asymmetric Fano resonance. We attribute this to an excitonic resonance that forms near the van-Hove singularity at the saddle point of the band structure and couples to the Dirac continuum. The Fano model quantitatively describes the experimental data all the way down to the infrared. In contrast, the common non-interacting particle picture cannot describe our data. These results suggest a profound connection between the absorption properties and the topology of the graphene band structure. △ Less

Submitted 6 January, 2011; originally announced January 2011.

Comments: 3 pages, 3 figures

Raman Scattering at Pure Graphene Zigzag Edges

Authors: Benjamin Krauss, Péter Nemes-Incze, Viera Skakalova, László P. Biro, Klaus von Klitzing, Jurgen H. Smet

Abstract: Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30°, which raised expectations that their boundar… ▽ More Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30°, which raised expectations that their boundaries follow pure zigzag and armchair directions. The predicted Raman behavior at such crystallographic edges however failed to confirm pure edge chirality. Here, we perform confocal Raman spectroscopy on hexagonal holes obtained after the anisotropic etching of prepatterned pits using carbothermal decomposition of SiO2. The boundaries of the hexagonal holes are aligned along the zigzag crystallographic direction and leave hardly any signature in the Raman map indicating unprecedented purity of the edge chirality. This work offers the first opportunity to experimentally confirm the validity of the Raman theory for graphene edges. △ Less

Submitted 13 October, 2010; originally announced October 2010.

Comments: 16 pages, 5 figures

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Authors: Isabella Gierz, Takayuki Suzuki, Dong Su Lee, Benjamin Krauss, Christian Riedl, Ulrich Starke, Hartmut Höchst, Jurgen H. Smet, Christian R. Ast, Klaus Kern

Abstract: The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-… ▽ More The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 7 pages, 4 figures, 1 table

Hot Phonons in an Electrically Biased Graphene Constriction

Authors: Dong-Hun Chae, Benjamin Krauss, Klaus von Klitzing, Jurgen H. Smet

Abstract: Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent st… ▽ More Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature dependent studies. Here, we address the importance of phonon carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene based electronic devices. We demonstrate that gapless graphene grants electron phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the bandgap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K. △ Less

Submitted 12 January, 2010; originally announced January 2010.

Comments: Nano Letters (Web publication on 30th Dec. 2009, DOI:10.1021/nl903167f)

Graphene on a hydrophobic substrate: Do** reduction and hysteresis suppression under ambient conditions

Authors: Myrsini Lafkioti, Benjamin Krauss, Timm Lohmann, Ute Zschieschang, Hagen Klauk, Klaus v. Klitzing, Jurgen H. Smet

Abstract: The intrinsic do** level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover, transport properties of such graphene devices suffer from hysteretic behavior under ambient conditions. The hysteresis presumably originates from… ▽ More The intrinsic do** level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate morphology. Moreover, transport properties of such graphene devices suffer from hysteretic behavior under ambient conditions. The hysteresis presumably originates from dipolar adsorbates on the substrate or graphene surface. Here, we demonstrate that it is possible to reliably obtain low intrinsic do** levels and to strongly suppress hysteretic behavior even in ambient air by depositing graphene on top of a thin, hydrophobic self assembled layer of hexamethyldisilazane (HMDS). The HMDS serves as a reproducible template that prevents the adsorption of dipolar substances. It may also screen the influence of substrate deficiencies. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 12 pages, 3 figures

Band structure engineering of epitaxial graphene on SiC by molecular do**

Authors: Camilla Coletti, Christian Riedl, Dong Su Lee, Benjamin Krauss, Luc Patthey, Klaus von Klitzing, Jurgen H. Smet, Ulrich Starke

Abstract: Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type do**. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemis… ▽ More Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type do**. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ). Charge neutrality can be reached in monolayer graphene as shown in electron dispersion spectra from angular resolved photoemission spectroscopy (ARPES). In bilayer graphene the band gap that originates from the SiC/graphene interface dipole increases with increasing F4-TCNQ deposition and, as a consequence of the molecular do**, the Fermi level is shifted into the band gap. The reduction of the charge carrier density upon molecular deposition is quantified using electronic Fermi surfaces and Raman spectroscopy. The structural and electronic characteristics of the graphene/F4-TCNQ charge transfer complex are investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The do** effect on graphene is preserved in air and is temperature resistant up to 200\degree C. Furthermore, graphene non-covalent functionalization with F4-TCNQ can be implemented not only via evaporation in ultra-high vacuum but also by wet chemistry. △ Less

Submitted 15 March, 2010; v1 submitted 16 September, 2009; originally announced September 2009.

Journal ref: Physical Review B, 81 (23), 235401 (2010)

The nature of localization in graphene under quantum Hall conditions

Authors: J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, K. von Klitzing, J. H. Smet, A. Yacoby

Abstract: Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]. Here we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitu… ▽ More Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]. Here we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitude smaller [4,5,6,7,8,9,10]. We image the electronic density of states and the localized state spectrum of a graphene flake in the quantum Hall regime with a scanning single electron transistor [11]. Our microscopic approach provides direct insight into the nature of localization. Surprisingly, despite strong disorder, our findings indicate that localization in graphene is not dominated by single particle physics, but rather by a competition between the underlying disorder potential and the repulsive Coulomb interaction responsible for screening. △ Less

Submitted 29 June, 2009; originally announced June 2009.

Comments: 18 pages, including 5 figures

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective do**

Authors: Timm Lohmann, Klaus v. Klitzing, Jurgen H. Smet

Abstract: In this paper we describe a graphene p-n junction created by chemical do**. We find that chemical do** does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about influences on the initial do** of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing and compensation do** usin… ▽ More In this paper we describe a graphene p-n junction created by chemical do**. We find that chemical do** does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about influences on the initial do** of freshly prepared graphene. We investigated the removal of adsorbates by vacuum treatment, annealing and compensation do** using NH3. Hysteretic behavior is observed in the electric field effect due to dipolar adsorbates like water and NH3. Finally we demonstrate spatially selective do** of graphene using patterned PMMA. 4-terminal transport measurements of the p-n devices reveal edge channel mixing in the quantum hall regime. Quantized resistances of h/e^2, h/3e^2 and h/15e^2 can be observed as expected from theory. △ Less

Submitted 31 March, 2009; originally announced March 2009.

Comments: 18 pages, 5 figures

Journal ref: Nano Letters 9, 1973 (2009)

Laser-induced disassembly of a graphene single crystal into a nano-crystalline network

Authors: Benjamin Krauss, Timm Lohmann, Dong-Hun Chae, Miroslav Haluska, Klaus von Klitzing, Jurgen H. Smet

Abstract: We report about investigations of time-dependent structural modifications in single crystal graphene due to laser irradiation even at moderate power levels of 1mW in a diffraction limited spot. The structural modifications have been characterized by in situ scanning confocal Raman spectroscopy, atomic force height microscopy and transport studies. The time evolution of the Raman spectrum reveals… ▽ More We report about investigations of time-dependent structural modifications in single crystal graphene due to laser irradiation even at moderate power levels of 1mW in a diffraction limited spot. The structural modifications have been characterized by in situ scanning confocal Raman spectroscopy, atomic force height microscopy and transport studies. The time evolution of the Raman spectrum reveals two different effects: on a short time scale, dopants, initially present on the flake, are removed. The longer time scale behavior points to a laser induced gradual local decomposition of single crystal graphene into a network of interconnected nano-crystallites with a characteristic length scale of approximately 10 nm due to bond-breaking. The broken bonds offer additional docking sites for adsorbates as confirmed in transport and AFM height studies. These controlled structural modifications may for instance be valuable for enhancing the local reactivity and trimming graphene based gas sensors. △ Less

Submitted 4 December, 2008; originally announced December 2008.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. B 79, 165428 (2009)

Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2

Authors: Dong Su Lee, Christian Riedl, Benjamin Krauß, Klaus von Klitzing, Ulrich Starke, Jurgen H. Smet

Abstract: Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the linewidth of the 2D (or D*) peak. The Raman sp… ▽ More Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the linewidth of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate. △ Less

Submitted 25 July, 2008; originally announced July 2008.

Comments: 27 pages, 8 figures

Photo-current and photo-voltage oscillations in the two-dimensional electron system: screening and "anti-screening" of a potential profile

Authors: S. I. Dorozhkin, I. V. Pechenezhskiy, L. N. Pfeiffer, K. W. West, V. Umansky, K. von Klitzing, J. H. Smet

Abstract: We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave frequency is close to a multiple of the cyclotron resonance frequency. They originate from built-in electric fields due to for instance band bending at contacts. The… ▽ More We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave frequency is close to a multiple of the cyclotron resonance frequency. They originate from built-in electric fields due to for instance band bending at contacts. The oscillations correspond to a suppression (screening) or an enhancement ("anti-screening") of these fields by the photo-excited electrons. △ Less

Submitted 1 July, 2008; originally announced July 2008.

Journal ref: Phys.Rev.Lett. 102, 036602 (2009)

Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

Authors: J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, A. Yacoby

Abstract: The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external do** the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport measurements at high carrier densities indicate rather high mobilities, many questions pertaining to disorder remain unanswered. In particular, it has been argu… ▽ More The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external do** the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport measurements at high carrier densities indicate rather high mobilities, many questions pertaining to disorder remain unanswered. In particular, it has been argued theoretically, that when the average carrier density is zero, the inescapable presence of disorder will lead to electron and hole puddles with equal probability. In this work, we use a scanning single electron transistor to image the carrier density landscape of graphene in the vicinity of the neutrality point. Our results clearly show the electron-hole puddles expected theoretically. In addition, our measurement technique enables to determine locally the density of states in graphene. In contrast to previously studied massive two dimensional electron systems, the kinetic contribution to the density of states accounts quantitatively for the measured signal. Our results suggests that exchange and correlation effects are either weak or have canceling contributions. △ Less

Submitted 15 May, 2007; originally announced May 2007.

Comments: 13 pages, 5 figures

Microwave induced magnetoresistance oscillations at the subharmonics of the cyclotron resonance

Authors: S. I. Dorozhkin, J. H. Smet, K. von Klitzing, L. N. Pfeiffer, K. W. West

Abstract: The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without… ▽ More The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without invoking multi-photon absorption processes. The existence of a frequency threshold above which such oscillations disappear lends further support to this explanation. △ Less

Submitted 29 August, 2006; originally announced August 2006.

Comments: 5 pages, 5 figures

Journal ref: JETP Letters 86, 543 (2007); [Pis'ma ZhETF, 86, 616 (2007)]

Circular polarization dependent study of the microwave photoconductivity in a two-dimensional electron system

Authors: J. H. Smet, B. Gorshunov, C. Jiang, L. Pfeiffer, K. West, V. Umanksy, M. Dressel, R. Meisels, F. Kuchar, K. von Klitzing

Abstract: The polarization dependence of the low field microwave photoconductivity and absorption of a two-dimensional electron system has been investigated in a quasi-optical setup in which linear and any circular polarization can be produced in-situ. The microwave induced resistance oscillations and the zero resistance regions are notedly immune to the sense of circular polarization. This observation is… ▽ More The polarization dependence of the low field microwave photoconductivity and absorption of a two-dimensional electron system has been investigated in a quasi-optical setup in which linear and any circular polarization can be produced in-situ. The microwave induced resistance oscillations and the zero resistance regions are notedly immune to the sense of circular polarization. This observation is discrepant with a number of proposed theories. Deviations only occur near the cyclotron resonance absorption where an unprecedented large resistance response is observed. △ Less

Submitted 7 May, 2005; originally announced May 2005.

Comments: 5 pages, 3 figures

The Cyclotron Spin-Flip Mode as the Lowest-Energy Excitation of Unpolarized Integer Quantum Hall States

Authors: L. V. Kulik, I. V. Kukushkin, S. Dickmann, V. E. Kirpichev, A. B. Van'kov, A. L. Parakhonsky, J. H. Smet, K. von Klitzing, W. Wegscheider

Abstract: The cyclotron spin-flip modes of spin unpolarized integer quantum Hall states ($ν=2,4$) have been studied with inelastic light scattering. The energy of these modes is significantly smaller compared to the bare cyclotron gap. Second order exchange corrections are held responsible for a negative energy contribution and render these modes the lowest energy excitations of unpolarized integer quantu… ▽ More The cyclotron spin-flip modes of spin unpolarized integer quantum Hall states ($ν=2,4$) have been studied with inelastic light scattering. The energy of these modes is significantly smaller compared to the bare cyclotron gap. Second order exchange corrections are held responsible for a negative energy contribution and render these modes the lowest energy excitations of unpolarized integer quantum Hall states. △ Less

Submitted 27 April, 2008; v1 submitted 19 January, 2005; originally announced January 2005.

Comments: Published: Phys. Rev. B 72, 073304 (2005)

Journal ref: Phys. Rev. B 72, 073304 (2005)

Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions

Authors: S. I. Dorozhkin, J. H. Smet, V. Umansky, K. von Klitzing

Abstract: The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30 GHz causes a strong suppression of the resistance over a wide magnetic field range, whereas higher frequencies produce a non-monotonic behavior in the dampin… ▽ More The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30 GHz causes a strong suppression of the resistance over a wide magnetic field range, whereas higher frequencies produce a non-monotonic behavior in the dam** of the Shubnikov-de Haas oscillations. These observations are explained by the creation of a non-equilibrium electron distribution function by microwave induced intra-Landau level transitions. △ Less

Submitted 9 September, 2004; originally announced September 2004.

Comments: 4 pages, 5 figures

The microscopic nature of localization in the quantum Hall effect

Authors: S. Ilani, J. Martin, E. Teitelbaum, J. H. Smet, D. Mahalu, V. Umansky, A. Yacoby

Abstract: The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties due to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated wi… ▽ More The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the electronic transport properties due to particle localization. In the conventional theory of the quantum Hall effect, strong-field localization is associated with a single-particle drift motion of electrons along contours of constant disorder potential. Transport experiments that probe the extended states in the transition regions between quantum Hall phases have been used to test both the theory and its implications for quantum Hall phase transitions. Although several experiments on highly disordered samples have affirmed the validity of the single-particle picture, other experiments and some recent theories have found deviations from the predicted universal behaviour. Here we use a scanning single-electron transistor to probe the individual localized states, which we find to be strikingly different from the predictions of single-particle theory. The states are mainly determined by Coulomb interactions, and appear only when quantization of kinetic energy limits the screening ability of electrons. We conclude that the quantum Hall effect has a greater diversity of regimes and phase transitions than predicted by the single-particle framework. Our experiments suggest a unified picture of localization in which the single-particle model is valid only in the limit of strong disorder. △ Less

Submitted 1 February, 2004; originally announced February 2004.

Journal ref: Nature 427,328-332 (2004)

New type of $B$-periodic magneto-oscillations in a two-dimensional electron system induced by microwave irradiation

Authors: I. V. Kukushkin, M. Yu. Akimov, J. H. Smet, S. A. Mikhailov, K. von Klitzing, I. L. Aleiner, V. I. Falko

Abstract: We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave irradiation and are periodic in magnetic field. The period is determined by the microwave frequency, the electron density, and the distance between potential probes. The phenomenon is accounted for by coherent excitation… ▽ More We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave irradiation and are periodic in magnetic field. The period is determined by the microwave frequency, the electron density, and the distance between potential probes. The phenomenon is accounted for by coherent excitation of edge magnetoplasmons in the regions near the contacts and offers perspectives for the development of new tunable microwave and terahertz detection schemes and spectroscopic techniques. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 92, 236803 (2004)

Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

Authors: R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, V. Umansky

Abstract: We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbarω_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in… ▽ More We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbarω_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{*}/m$, with respect to the standard value for GaAs/AlGaAs devices. △ Less

Submitted 29 April, 2004; v1 submitted 3 November, 2003; originally announced November 2003.

Comments: 4 pages, 4 color figures

Journal ref: Phys. Rev. Lett. 92, 146801 (2004)

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

Authors: R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, V. Umansky

Abstract: We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance,… ▽ More We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes. △ Less

Submitted 24 May, 2004; v1 submitted 20 October, 2003; originally announced October 2003.

Comments: 4 pages text, 4 color figures

Journal ref: Phys. Rev. B 69, 161306 (2004)

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

Authors: R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, V. Umansky

Abstract: High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave powe… ▽ More High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature. △ Less

Submitted 1 November, 2004; v1 submitted 14 June, 2003; originally announced June 2003.

Comments: 3 color figures; published

Journal ref: Phys. Rev. B 70, 155310 (2004)