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Magnetization dynamics driven by displacement currents across a magnetic tunnel junction
Authors:
C. K. Safeer,
Paul S. Keatley,
Witold Skowroński,
Jakub Mojsiejuk,
Kay Yakushiji,
Akio Fukushima,
Shinji Yuasa,
Daniel Bedau,
Fèlix Casanova,
Luis E. Hueso,
Robert J. Hicken,
Daniele Pinna,
Gerrit van der Laan,
Thorsten Hesjedal
Abstract:
Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In…
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Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques.
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Submitted 9 May, 2024;
originally announced May 2024.
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Odd non-linear conductivity under spatial inversion in chiral Tellurium
Authors:
Manuel Suárez-Rodríguez,
Beatriz Martín-García,
Witold Skowroński,
F. Calavalle,
Stepan S. Tsirkin,
Ivo Souza,
Fernando De Juan,
Andrey Chuvilin,
Albert Fert,
Marco Gobbi,
Fèlix Casanova,
Luis E. Hueso
Abstract:
Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an in…
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Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the non-linear conductivity remain to be explored. Here, we report on a large, non-linear conductivity in chiral Tellurium. By measuring samples with opposite handedness, we demonstrate that the non-linear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the non-linear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral Te as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and non-linear transport, but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Submitted 16 April, 2024; v1 submitted 14 November, 2023;
originally announced November 2023.
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Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory
Authors:
Yahong Chai,
Yuhan Liang,
Cancheng Xiao,
Yue Wang,
Bo Li,
Dingsong Jiang,
Pratap Pal,
Yongjian Tang,
Hetian Chen,
Yuejie Zhang,
Witold Skowroński,
Qinghua Zhang,
Lin Gu,
**g Ma,
Pu Yu,
Jianshi Tang,
Yuan-Hua Lin,
Di Yi,
Daniel C. Ralph,
Chang-Beom Eom,
Huaqiang Wu,
Tianxiang Nan
Abstract:
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multife…
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Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
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Submitted 25 September, 2023;
originally announced September 2023.
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Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence
Authors:
A. Kozioł-Rachwał,
N. Kwiatek,
W. Skowroński,
K. Grochot,
J. Kanak,
E. Madej,
K. Freindl,
J. Korecki,
N. Spiridis
Abstract:
We report on the chemical structure and spin Hall magnetoresistance (SMR) in epitaxial $α$-Fe$_2$O$_3$(hematite)(0001)/Pt(111) bilayers with hematite thicknesses of 6 nm and 15 nm grown by molecular beam epitaxy on a MgO(111) substrate. Unlike previous studies that involved Pt overlayers on hematite, the present hematite films were grown on a stable Pt buffer layer and displayed structural changes…
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We report on the chemical structure and spin Hall magnetoresistance (SMR) in epitaxial $α$-Fe$_2$O$_3$(hematite)(0001)/Pt(111) bilayers with hematite thicknesses of 6 nm and 15 nm grown by molecular beam epitaxy on a MgO(111) substrate. Unlike previous studies that involved Pt overlayers on hematite, the present hematite films were grown on a stable Pt buffer layer and displayed structural changes as a function of thickness. These structural differences (the presence of a ferrimagnetic phase in the thinner film) significantly affected the magnetotransport properties of the bilayers. We observed a sign change of the SMR from positive to negative when the thickness of hematite increased from 6 nm to 15 nm. For $α$-Fe$_2$O$_3$(15 nm)/Pt, we demonstrated room-temperature switching of the Néel order with rectangular, nondecaying switching characteristics. Such structures open the way to extending magnetotransport studies to more complex systems with double asymmetric metal/hematite/Pt interfaces.
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Submitted 12 June, 2023;
originally announced June 2023.
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Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films
Authors:
M. Xochitl Aguilar-Pujol,
Sara Catalano,
Carmen González-Orellana,
Witold Skowronski,
Juan M. Gómez-Pérez,
Maxim Ilyn,
Celia Rogero,
Marco Gobbi,
Luis E. Hueso,
Fèlix Casanova
Abstract:
A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By p…
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A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By performing both local and non-local transport measurements in 18-nm-thick films of EuS using Pt electrodes, we detect magnon currents arising from thermal generation by the spin Seebeck effect. By comparing the dependence of the local and non-local signals with the temperature (< 30 K) and magnetic field (< 9 T), we confirm the magnon transport origin of the non-local signal. Finally, we extract the magnon diffusion length in the EuS film (~140 nm), a short value in good correspondence with the large Gilbert dam** measured in the same film.
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Submitted 14 November, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction
Authors:
Jakub Pawlak,
Witold Skowroński,
Piotr Kuświk,
Félix Casanova,
Marek Przybylski
Abstract:
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization precession of Co upon radio-frequency charge current injection. The utilization of a BTO ferroelectric tunnel barrier separating the Co and LSMO ferromagnetic el…
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The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization precession of Co upon radio-frequency charge current injection. The utilization of a BTO ferroelectric tunnel barrier separating the Co and LSMO ferromagnetic electrodes gives rise to both tunneling-magnetoresistance and electroresistance. Using the spin-orbit torque ferromagnetic resonance, the maganetization dynamics of the Co/Pt bilayers was studied at room temperature. Unexpectedly the magnetization dynamics study in the same geometry performed at low temperature reveals the existence of both Co and LSMO resonance peaks indicating efficient spin current generation both using the spin Hall effect in Pt and spin pum** in LSMO that tunnel via the BTO barrier.
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Submitted 1 January, 2023;
originally announced January 2023.
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Influence of Ferromagnetic Interlayer Exchange Coupling on Current-induced Magnetization Switching and Dzyaloshinskii-Moriya Interaction in Co/Pt/Co Multilayer System
Authors:
Krzysztof Grochot,
Piotr Ogrodnik,
Jakub Mojsiejuk,
Piotr Mazalski,
Urszula Guzowska,
Witold Skowroński,
Tomasz Stobiecki
Abstract:
This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and mu…
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This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and multilevel magnetization switching. Experimental findings show four distinct resistance states under an external magnetic field and spin Hall effect related spin current. We explain this phenomenon based on the asymmetry between Pt/Co and Co/Pt interfaces and the interlayer coupling, which, in turn, influences DMI and subsequently impacts the magnetization dynamics. Numerical simulations, including macrospin, 1D domain wall, and simple spin wave models, further support the experimental observations of multilevel switching and help uncover the underlying mechanisms. Our proposed explanation, supported by magnetic domain observation using polar-magnetooptical Kerr microscopy, offers insights into both the spatial distribution of magnetization and its dynamics for different IECs, thereby shedding light on its interplay with DMI, which may lead to potential applications in storage devices.
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Submitted 20 December, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
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A comprehensive simulation package for analysis of multilayer spintronic devices
Authors:
Jakub Mojsiejuk,
Sławomir Ziętek,
Krzysztof Grochot,
Witold Skowroński,
Tomasz Stobiecki
Abstract:
We present cmtj - a comprehensive simulation package that allows large-scale macrospin simulations for a variety of multilayer spintronics devices. Apart from conventional static simulations, such as magnetoresistance and magnetisation hysteresis loops, cmtj implements a mathematical model of dynamic experimental techniques commonly used for spintronics devices characterisation, for instance: spin…
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We present cmtj - a comprehensive simulation package that allows large-scale macrospin simulations for a variety of multilayer spintronics devices. Apart from conventional static simulations, such as magnetoresistance and magnetisation hysteresis loops, cmtj implements a mathematical model of dynamic experimental techniques commonly used for spintronics devices characterisation, for instance: spin diode ferromagnetic resonance, pulse-induced microwave magnetometry, or harmonic Hall voltage measurements. We demonstrate the accuracy of the macrospin simulations on a variety of examples, accompanied by some experimental results.
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Submitted 23 July, 2022;
originally announced July 2022.
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Angular harmonic Hall voltage and magnetoresistance measurements of Pt/FeCoB and Pt-Ti/FeCoB bilayers for spin Hall conductivity determination
Authors:
Witold Skowroński,
Krzysztof Grochot,
Piotr Rzeszut,
Stanisław Łazarski,
Grzegorz Gajoch,
Cezary Worek,
Jarosław Kanak,
Tomasz Stobiecki,
Jürgen Langer,
Berthold Ocker,
Mehran Vafaee
Abstract:
Materials with significant spin-orbit coupling enable efficient spin-to-charge interconversion, which can be utilized in novel spin electronic devices. A number of elements, mainly heavy-metals (HM) have been identified to produce a sizable spin current ($j_\mathrm{s}$), while supplied with a charge current ($j$), detected mainly in the neighbouring ferromagnetic (FM) layer. Apart from the spin Ha…
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Materials with significant spin-orbit coupling enable efficient spin-to-charge interconversion, which can be utilized in novel spin electronic devices. A number of elements, mainly heavy-metals (HM) have been identified to produce a sizable spin current ($j_\mathrm{s}$), while supplied with a charge current ($j$), detected mainly in the neighbouring ferromagnetic (FM) layer. Apart from the spin Hall angle $θ_\mathrm{SH}$ = $j_\mathrm{s}$/$j$, spin Hall conductivity ($σ_\mathrm{SH}$) is an important parameter, which takes also the resistivity of the material into account. In this work, we present a measurement protocol of the HM/FM bilayers, which enables for a precise $σ_\mathrm{SH}$ determination. Static transport measurements, including resistivity and magnetization measurements are accompanied by the angular harmonic Hall voltage analysis in a dedicated low-noise rotating probe station. Dynamic characterization includes effective magnetization and magnetization dam** measurement, which enable HM/FM interface absorption calculation. We validate the measurement protocol in Pt and Pt-Ti underlayers in contact with FeCoB and present the $σ_\mathrm{SH}$ of up to 3.3$\times$10$^5$ S/m, which exceeds the values typically measured in other HM, such as W or Ta.
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Submitted 21 October, 2021;
originally announced October 2021.
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Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness
Authors:
Piotr Ogrodnik,
Krzysztof Grochot,
Łukasz Karwacki,
Jarosław Kanak,
Michał Prokop,
Jakub Chęciński,
Witold Skowroński,
Sławomir Ziętek,
Tomasz Stobiecki
Abstract:
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano oscillators, or bio-inspired neur…
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The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet nanostructures, required for applications in the emergent magnetic technologies like random access memories, high-frequency nano oscillators, or bio-inspired neuromorphic computations. We study the interface properties, magnetization dynamics, magnetostatic features and spin-orbit interactions within the multilayer system Ti(2)/Co(1)/Pt(0-4)/Co(1)/MgO(2)/Ti(2) (thicknesses in nanometers) patterned by optical lithography on micrometer-sized bars. In the investigated devices, Pt is used as a source of the spin current and as a non-magnetic spacer with variable thickness, which enables the magnitude of the interlayer ferromagnetic exchange coupling to be effectively tuned. We also find the Pt thickness-dependent changes in magnetic anisotropies, magnetoresistance, effective Hall angle and, eventually, spin-orbit torque fields at interfaces. The experimental findings are supported by the relevant interface structure-related simulations, micromagnetic, macrospin, as well as the spin drift-diffusion models. Finally, the contribution of the spin-orbital Edelstein-Rashba interfacial fields is also briefly discussed in the analysis.
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Submitted 18 June, 2021;
originally announced June 2021.
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High frequency voltage-induced ferromagnetic resonance in magnetic tunnel junctions
Authors:
Witold Skowronski,
Stanislaw Lazarski,
Jakub Mojsiejuk,
Jakub Checinski,
Marek Frankowski,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization dam** are determined by analysing field-depen…
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Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization dam** are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization dam** extraction.
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Submitted 4 June, 2019;
originally announced June 2019.
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Biaxial magnetic field setup for angular magnetic measurements of thin films and spintronic nanodevices
Authors:
Piotr Rzeszut,
Witold Skowroński,
Sławomir Ziętek,
Piotr Ogrodnik,
Tomasz Stobiecki
Abstract:
The biaxial magnetic-field setup for angular magnetic measurements of thin film and spintronic devices is designed and presented. The setup allows for application of the in-plane magnetic field using a quadrupole electromagnet, controlled by power supply units and integrated with an electromagnet biaxial magnetic field sensor. In addition, the probe station is equipped with a microwave circuitry,…
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The biaxial magnetic-field setup for angular magnetic measurements of thin film and spintronic devices is designed and presented. The setup allows for application of the in-plane magnetic field using a quadrupole electromagnet, controlled by power supply units and integrated with an electromagnet biaxial magnetic field sensor. In addition, the probe station is equipped with a microwave circuitry, which enables angle-resolved spin torque oscillation measurements. The angular dependencies of magnetoresistance and spin diode effect in a giant magnetoresistance strip are shown as an operational verification of the experimental setup. We adapted an analytical macrospin model to reproduce both the resistance and spin-diode angular dependency measurements.
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Submitted 17 August, 2017;
originally announced August 2017.
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Understanding stability diagram of perpendicular magnetic tunnel junctions
Authors:
Witold Skowroński,
Maiej Czapkiewicz,
Sławomir Ziętek,
Jakub Chęciński,
Marek Frankowski,
Piotr Rzeszut,
Jerzy Wrona
Abstract:
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ratio and perpendicular magnetic anisotropy. After annealing at 400 $^\circ$C, the TMR ratio for 1.5 nm thick CoFeB sublayer reached 180 % at room tempe…
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Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ratio and perpendicular magnetic anisotropy. After annealing at 400 $^\circ$C, the TMR ratio for 1.5 nm thick CoFeB sublayer reached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrier thickness corresponding to the resistance area product RA = 10 Ohm$\mathrmμ$m$^2$. The voltage vs. magnetic field stability diagrams measured in pillar-shaped MTJs with 130 nm diameter indicate the competition between spin transfer torque (STT), voltage controlled magnetic anisotropy (VCMA) and temperature effects in the switching process. An extended stability phase diagram model that takes into account all three parameters and the effective dam** measured independently using broadband ferromagnetic resonance technique enabled the determination of both STT and VCMA coefficients that are responsible for the FL magnetization switching.
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Submitted 23 January, 2017;
originally announced January 2017.
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Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures
Authors:
Monika Cecot,
Lukasz Karwacki,
Witold Skowronski,
Jaroslaw Kanak,
Jerzy Wrona,
Antoni Zywczak,
Lide Yao,
Sebastiaan van Dijken,
Jozef Barnas,
Tomasz Stobiecki
Abstract:
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetr…
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We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetragonal beta-phase appears. Effective spin-orbit torques are calculated based on harmonic Hall voltage measurements performed in a temperature range between 15 and 300 K. To account for the temperature dependence of dam**-like and field-like torques, we extend the spin diffusion model by including an additional contribution from the Ta/CoFeB interface. Based on this approach, the temperature dependence of the spin Hall angle in the Ta underlayer and at Ta/CoFeB interface are determined separately. The results indicate an almost temperature-independent spin Hall angle of theta_SH-N = -0.2 in Ta and a strongly temperature-dependent theta_SH-I for the intermixed Ta/CoFeB interface.
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Submitted 9 December, 2016;
originally announced December 2016.
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Electric-field tunable spin waves in PMN-PT/NiFe heterostructure: experiment and micromagnetic simulations
Authors:
Slawomir Zietek,
Jakub Checinski,
Marek Frankowski,
Witold Skowronski,
Tomasz Stobiecki
Abstract:
We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic resonance (FMR) mode and SSWR in NiFe strip mechanically coupled with a piezoelectric substrate. Application of an electric field to a PMNPT creates…
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We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic resonance (FMR) mode and SSWR in NiFe strip mechanically coupled with a piezoelectric substrate. Application of an electric field to a PMNPT creates a strain in permalloy and thus shifts the FMR and SSWR fields due to the magnetostriction effect. The experimental results are compared with micromagnetic simulations and a good agreement between them is found for dynamics of FMR and SSWR with and without electric field. Moreover, micromagnetic simulations enable us to discuss the amplitude and phase spatial distributions of FMR and SSWR modes, which are not directly observable by means of spin diode detection technique.
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Submitted 14 October, 2016;
originally announced October 2016.
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Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures
Authors:
Sławomir Ziętek,
Piotr Ogrodnik,
Witold Skowroński,
Feliks Stobiecki,
Sebastiaan van Dijken,
Józef Barnaś,
Tomasz Stobiecki
Abstract:
Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunabi…
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Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the LLG equation, with magnetostriction effect taken into account, is developed to explain the measured dynamics. Based on this model, conditions for strong electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.
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Submitted 19 May, 2016;
originally announced May 2016.
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Temperature dependence of spin-orbit torques in W/CoFeB bilayers
Authors:
Witold Skowronski,
Monika Cecot,
Jaroslaw Kanak,
Slawomir Zietek,
Tomasz Stobiecki,
Lide Yao,
Sebastiaan van Dijken,
Takayuki Nozaki,
Kay Yakushiji,
Shinji Yuasa
Abstract:
We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution f…
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We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect.
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Submitted 18 April, 2016;
originally announced April 2016.
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Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy
Authors:
Marek Frankowski,
Antoni Żywczak,
Maciej Czapkiewicz,
Sławomir Ziętek,
Jarosław Kanak,
Monika Banasik,
Wiesław Powroźnik,
Witold Skowroński,
Jakub Chęciński,
Jerzy Wrona,
Hubert Głowiński,
Janusz Dubowik,
Jean-Philippe Ansermet,
Tomasz Stobiecki
Abstract:
We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In…
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We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/MgO/FeCoB/Ta/Ru multilayers for three different buffers: Ta 5 / Ru 10 / Ta 3, Ta 5 / Ru 10 / Ta 10 and Ta 5 / Ru 20 / Ta 5 (all thicknesses in nm). In addition, we study systems with a single FeCoB layer deposited above as well as below the MgO barrier. The crystallographic texture and the roughness of the buffers are determined by means of XRD and atomic force microscopy measurements. Furthermore, we examine the magnetic domain pattern, the magnetic dead layer thickness and the perpendicular magnetic anisotropy fields for each sample. Finally, we investigate the effect of the current induced magnetization switching for nanopillar junctions with lateral dimensions ranging from 1 μm down to 140 nm. Buffer Ta 5 / Ru 10 / Ta 3, which has the thickest dead layer, exhibits a large increase in the thermal stability factor while featuring a slightly lower critical current density value when compared to the buffer with the thinnest dead layer Ta 5 / Ru 20 / Ta 5.
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Submitted 23 February, 2015;
originally announced February 2015.
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Towards wafer scale inductive characterization of spin transfer torque critical current density of magnetic tunnel junction stacks
Authors:
Sibylle Sievers,
Niklas Liebing,
Santiago Serrano-Guisan,
Ricardo Ferreira,
Elvira Paz,
Ambra Caprile,
Alessandra Manzin,
Massimo Pasquale,
Witold Skowroński,
Tomasz Stobiecki,
Karsten Rott,
Günter Reiss,
Jürgen Langer,
Berthold Ocker,
Hans Werner Schumacher
Abstract:
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective dam** are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well…
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We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective dam** are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well to the values derived from current induced switching measurements on individual nanopillars. Using a wafer scale inductive probe head could in the future enable wafer probe station based metrology of $j^{c0}$.
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Submitted 18 November, 2014;
originally announced November 2014.
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Rectification of radio frequency current in giant magnetoresistance spin valve
Authors:
Sławomir Ziętek,
Piotr Ogrodnik,
Marek Frankowski,
Jakub Chęciński,
Piotr Wiśniowski,
Witold Skowroński,
Jerzy Wrona,
Tomasz Stobiecki,
Antoni Żywczak,
Józef Barnaś
Abstract:
We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to th…
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We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$. We present a theoretical description of this phenomenon and calculate the spin diode signal, $V_{DC}$, as a function of frequency, external magnetic field, and angle at which the external field is applied. A satisfactory quantitative agreement between theoretical predictions and experimental data has been achieved. Finally, we show that the spin diode signal in GMR devices is significantly stronger than in the anisotropic magnetoresistance permalloy-based devices.
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Submitted 24 October, 2014;
originally announced October 2014.
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Spin-torque diode radio-frequency detector with voltage tuned resonance
Authors:
Witold Skowroński,
Marek Frankowski,
Jerzy Wrona,
Tomasz Stobiecki,
Piotr Ogrodnik,
Józef Barnaś
Abstract:
We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and…
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We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.
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Submitted 26 June, 2014;
originally announced June 2014.
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Backhop** effect in magnetic tunnel junctions: comparison between theory and experiment
Authors:
Witold Skowroński,
Piotr Ogrodnik,
Jerzy Wrona,
Tomasz Stobiecki,
Renata Świrkowicz,
Józef Barnaś,
Günter Reiss,
Sebastiaan van Dijken
Abstract:
We report on the magnetic switching and backhop** effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier…
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We report on the magnetic switching and backhop** effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching between the magnetization states, which appears when the current direction favors the parallel magnetic configuration. The effect depends on the barrier thickness $t_b$, and is not observed in tunnel junctions with very thin MgO tunnel barriers, $t_b$ $<$ 0.95 nm. Switching dependence on the bias voltage and barrier thickness is explained in terms of the macrospin model, with the magnetization dynamics described by the modified Landau-Lifshitz-Gilbert equation. Numerical simulations indicate that the competition between in-plane and out-of-plane torque components can result at high bias voltages in a non-deterministic switching behavior, in agreement with experimental observations. When the barrier thickness is reduced, the overall coupling between the magnetic layers across the barrier becomes ferromagnetic, which suppresses the backhop** effect.
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Submitted 13 May, 2013;
originally announced May 2013.
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Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions
Authors:
Witold Skowroński,
Maciej Czapkiewicz,
Marek Frankowski,
Jerzy Wrona,
Tomasz Stobiecki,
Günter Reiss,
Khattiya Chalapat,
Gheorghe S. Paraoanu,
Sebastiaan van Dijken
Abstract:
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising f…
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Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF current into nanosized MTJs generates a DC mixing voltage across the device when the frequency is in resonance with the resistance oscillations arising from the spin transfer torque. Magnetization precession in the free and reference layers of the MTJs is analyzed by comparing ST-FMR signals with macrospin and micromagnetic simulations. From ST-FMR spectra at different DC bias voltage, the in-plane and perpendicular torkances are derived. The experiments and free-electron model calculations show that the absolute torque values are independent of tunnel barrier thickness. The influence of coupling between the free and reference layer of the MTJs on the ST-FMR signals and the derived torkances are discussed.
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Submitted 30 January, 2013;
originally announced January 2013.
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Magnetic field sensor with voltage-tunable sensing properties
Authors:
Witold Skowroński,
Piotr Wiśniowski,
Tomasz Stobiecki,
Sebastiaan van Dijken,
Susana Cardoso,
Paulo P. Freitas
Abstract:
We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the field sensor affects the…
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We report on a magnetic field sensor based on CoFeB/MgO/CoFeB magnetic tunnel junctions. By taking advantage of the perpendicular magnetic anisotropy of the CoFeB/MgO interface, the magnetization of the sensing layer is tilted out-of-plane which results in a linear response to in-plane magnetic fields. The application of a bias voltage across the MgO tunnel barrier of the field sensor affects the magnetic anisotropy and thereby its sensing properties. An increase of the maximum sensitivity and simultaneous decrease of the magnetic field operating range by a factor of two is measured. Based on these results, we propose a voltage-tunable sensor design that allows for active control of the sensitivity and the operating filed range with the strength and polarity of the applied bias voltage.
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Submitted 28 August, 2012;
originally announced August 2012.
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Spin transfer torque oscillator based on asymmetric magnetic tunnel junctions
Authors:
Witold Skowroński,
Tomasz Stobiecki,
Jerzy Wrona,
Günter Reiss,
Sebastiaan van Dijken
Abstract:
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrod…
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We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the ferromagnetic interlayer exchange coupling between the free and reference layer in the MTJ and perpendicular interface anisotropy in thin CoFeB electrode we demonstrate the nanometer scale device that can generate high frequency signal without external magnetic field applied. The amplitude of the oscillation exceeds 10 nV/Hz^0.5 at 1.5 GHz.
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Submitted 3 October, 2011;
originally announced October 2011.
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Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications
Authors:
Santiago Serrano-Guisan,
Witold Skowronski,
Jerzy Wrona,
Niklas Liebing,
Maciej Czapkiewicz,
Tomasz Stobiecki,
Günter Reiss,
Hans-Werner Schumacher
Abstract:
We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the f…
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We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the field dependence of the effective dam** parameter is derived. Below a certain threshold barrier thickness we observe an increased effective dam** for antiparallel orientation of free and pinned layer which would inhibit reversible low current density spin torque magnetization reversal. Such inductive measurements, in combination with wafer probe station based magneto transport experiments, allow a fast determination of the optimum tunnel barrier thickness range for spin torque memory applications in a lithography free process.
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Submitted 22 March, 2011;
originally announced March 2011.
