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Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
Authors:
Anamul Md. Hoque,
Lars Sjöström,
Dmitrii Khokhriakov,
Bing Zhao,
Saroj P. Dash
Abstract:
Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion…
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Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to T = 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi1.5Sb0.5Te1.7Se1.3 at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices.
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Submitted 25 January, 2024;
originally announced January 2024.
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Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature
Authors:
Roselle Ngaloy,
Bing Zhao,
Soheil Ershadrad,
Rahul Gupta,
Masoumeh Davoudiniya,
Lakhan Bainsla,
Lars Sjöström,
Anamul M. Hoque,
Alexei Kalaboukhov,
Peter Svedlindh,
Biplab Sanyal,
Saroj P. Dash
Abstract:
Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with do** or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of…
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Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with do** or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies.
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Submitted 30 October, 2023;
originally announced October 2023.
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Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4
Authors:
Lakhan Bainsla,
Bing Zhao,
Anamul Md. Hoque,
Lars Sjöström,
Nilamani Behera,
Mahmoud Abdel-Hafiez,
Johan Åkerman,
Saroj P. Dash
Abstract:
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. C…
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Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane dam**-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane dam**-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.
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Submitted 10 October, 2023;
originally announced October 2023.
