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Surface passivation of FAPbI3-rich perovskite with caesium iodide outperforms bulk incorporation
Authors:
Thomas P. Baumeler,
Essa A. Alharbi,
George Kakavelakis,
George C. Fish,
Mubarak T. Aldosari,
Miqad S. Albishi,
Lukas Pfeifer,
Brian I. Carlsen,
Jun-Ho Yum,
Abdullah S. Alharbi,
Mounir D. Mensi,
**g Gao,
Felix T. Eickemeyer,
Kevin Sivula,
Jacques-Edouard Moser,
Shaik M. Zakeeruddin,
Michael Graetzel
Abstract:
Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversi…
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Metal halide perovskites (MHPs) have shown an incredible rise in efficiency, reaching as high as 25.7%, which now competes with traditional photovoltaic technologies. Herein, we excluded CsX and RbX, the most commonly used cations to stabilize FAPbI3, from the bulk of perovskite thin films and applied them on the surface, as passivation agents. Extensive device optimization led to a power conversion efficiency (PCE) of 24.1% with a high fill factor (FF) of 82.2% upon passivation with CsI. We investigated in-depth the effect of CsI passivation on structural and optoelectronic properties using X-ray diffraction (XRD), angle resolved X-ray photoelectron spectroscopy (ARXPS), Kelvin Probe Force (KPFM) microscopy, time-resolved photoluminescence (TRPL), photoluminescence quantum yield (PLQY) and electroabsorption spectroscopy (TREAS). Furthermore, passivated devices exhibit enhanced operational stability, with optimized passivation with CsI leading to a retention of ~90% of initial PCE under 1 Sun illumination with maximum power point tracking for 600 h.
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Submitted 25 April, 2023;
originally announced April 2023.
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Enhancing thermal stability of solution-processed small molecule semiconductor thin films using a flexible linker approach
Authors:
Andrea Gasperini,
Xavier Jeanbourquin,
Aiman Rahmanudin,
Xiaoyun Yu,
Kevin Sivula
Abstract:
Solution-processed organic photovoltaics (OPV) have recently reached the target 10% power conversion efficiency expected to signal their viable commercialization as an inexpensive and scalable energy conversion technology. However, obtaining devices with suitable long-term stability remains an unsolved challenge. Here we present a new strategy to improve the thermal stability of small-molecule-bas…
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Solution-processed organic photovoltaics (OPV) have recently reached the target 10% power conversion efficiency expected to signal their viable commercialization as an inexpensive and scalable energy conversion technology. However, obtaining devices with suitable long-term stability remains an unsolved challenge. Here we present a new strategy to improve the thermal stability of small-molecule-based bulk-heterojunction OPVs by including a custom additive specifically designed to interact with the device active layer components. Our results indicate that active layer degradation under continuous thermal stress can be inhibited due to the formation of more robust thin film microstructure with the additive present. Since our additive employs the identical semiconductor core used in the active layer, but linked by aliphatic chains into a flexible polymer, this straightforward strategy can reasonably be applied to stabilize a wide variety of semiconducting small molecules in solution-processed molecular OPVs, transistors and light emitting diodes.
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Submitted 7 October, 2016;
originally announced October 2016.
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Evolution of an oxygen NEXAFS transition in the upper Hubbard band in α-Fe2O3 upon electrochemical oxidation
Authors:
Debajeet K. Bora,
Artur Braun,
Selma Erat,
Romy Löhnert,
Kevin Sivula,
Jörg Töpfer,
Michael Grätzel,
Thomas Graule,
Edwin Constable
Abstract:
Electrochemical oxidation of hematite (α-Fe2O3) nano-particulate films at 600 mV vs. Ag+/AgCl reference in KOH electrolyte forms a species at the hematite surface which causes a new transition in the upper Hubbard band between the Fe(3d)-O(2p) state region and the Fe(4sp)-O(2p) region, as evidenced by oxygen near edge x-ray absorption fine structure (NEXAFS) spectra. The electrochemical origin of…
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Electrochemical oxidation of hematite (α-Fe2O3) nano-particulate films at 600 mV vs. Ag+/AgCl reference in KOH electrolyte forms a species at the hematite surface which causes a new transition in the upper Hubbard band between the Fe(3d)-O(2p) state region and the Fe(4sp)-O(2p) region, as evidenced by oxygen near edge x-ray absorption fine structure (NEXAFS) spectra. The electrochemical origin of this transition suggests that it is related with a surface state. This transition, not known for pristine α-Fe2O3 is at about the same x-ray energy, where pristine 1% Si doped Si:Fe2O3 has such transition. Occurrence of this state coincides with the onset of an oxidative dark current wave at around 535 mV - a potential range, where the tunneling exchange current has been previously reported to increase by three orders of magnitude with the valence band and the transfer coefficient by a factor of 10. Oxidation to only 200 mV does not form such extra NEXAFS feature, supporting that a critical electrochemical potential between 200 and 600 mV is necessary to change the electronic structure of the iron oxide at the surface. Decrease of the surface roughness, as suggested by visual inspection, profilometry and x-ray reflectivity, points to faceting as potential structural origin of the surface state.
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Submitted 6 June, 2011;
originally announced June 2011.
