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Long-range Phase Coherence and Tunable Second Order $φ_0$-Josephson Effect in a Dirac Semimetal $1T-PtTe_2$
Authors:
Pranava K. Sivakumar,
Mostafa T. Ahari,
Jae-Keun Kim,
Yufeng Wu,
Anvesh Dixit,
George J. de Coster,
Avanindra K. Pandeya,
Matthew J. Gilbert,
Stuart S. P. Parkin
Abstract:
Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several mechanisms such as magneto-chiral effects, finite momentum Cooper pairing, asymmetric edge currents have been proposed to give rise to a supercurrent diode effect in different materials. In this work, we establish the presence of a large intrinsic Josephs…
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Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several mechanisms such as magneto-chiral effects, finite momentum Cooper pairing, asymmetric edge currents have been proposed to give rise to a supercurrent diode effect in different materials. In this work, we establish the presence of a large intrinsic Josephson diode effect in a type-II Dirac semimetal $1T-PtTe_2$ facilitated by its helical spin-momentum locking and distinguish it from other extrinsic effects. The magnitude of the Josephson diode effect is shown to be directly correlated to the large second-harmonic component of the supercurrent that is induced by the significant contribution of the topological spin-momentum locked states that promote coherent Andreev processes in the junction. We denote such junctions, where the relative phase between the two harmonics corresponding to charge transfers of $2e$ and $4e$ can be tuned by a magnetic field, as second order $φ_0$-junctions. The direct correspondence between the second harmonic supercurrent component and the diode effect in $1T-PtTe_2$ junctions makes topological semimetals with high transparency an ideal platform to study and implement the Josephson diode effect, while also enabling further research on higher order supercurrent transport in Josephson junctions.
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Submitted 28 March, 2024;
originally announced March 2024.
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Anomalous Shubnikov-de Haas effect and observation of the Bloch-Grüneisen temperature in the Dirac semimetal ZrTe5
Authors:
S. Galeski,
K. Araki,
O. K. Forslund,
R. Wawrzynczak,
H. F. Legg,
P. K. Sivakumar,
U. Miniotaite,
F. Elson,
M. Månsson,
C. Witteveen,
F. O. von Rohr,
A. Q. R. Baron,
D. Ishikawa,
Q. Li,
G. Gu,
L. X. Zhao,
W. L. Zhu,
G. F. Chen,
Y. Wang,
S. S. P. Parkin,
D. Gorbunov,
S. Zherlitsyn,
B. Vlaar,
D. H. Nguyen,
S. Paschen
, et al. (7 additional authors not shown)
Abstract:
Appearance of quantum oscillations (QO) in both thermodynamic and transport properties of metals at low temperatures is the most striking experimental consequence of the existence of a Fermi surface (FS). The frequency of these oscillations and the temperature dependence of their amplitude provides essential information about the FS topology and fermionic quasiparticle properties. Here, we report…
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Appearance of quantum oscillations (QO) in both thermodynamic and transport properties of metals at low temperatures is the most striking experimental consequence of the existence of a Fermi surface (FS). The frequency of these oscillations and the temperature dependence of their amplitude provides essential information about the FS topology and fermionic quasiparticle properties. Here, we report the observation of an anomalous suppression of the QO amplitude seen in resistivity (Shubnikov de-Haas effect) at sub-kelvin temperatures in ZrTe5 samples with a single small FS sheet comprising less than 5% of the first Brillouin zone. By comparing these results with measurements of the magneto-acoustic QO and the recovery of the usual Lifshitz-Kosevich behavior of the Shubnikov de-Haas (SdH) effect in ZrTe$_5$ samples with a multi-sheet FS, we show that the suppression of the SdH effect originates from a decoupling of the electron liquid from the lattice. On crossing the so-called Bloch-Grüneisen temperature, T$_BG$, electron-phonon scattering becomes strongly suppressed and in the absence of Umklapp scattering the electronic liquid regains Galilean invariance. In addition, we show, using a combination of zero-field electrical conductivity and ultrasonic-absorption measurements, that entering this regime leads to an abrupt increase of electronic viscosity.
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Submitted 31 January, 2024; v1 submitted 19 September, 2023;
originally announced September 2023.
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Intrinsic supercurrent non-reciprocity coupled to the crystal structure of a van der Waals Josephson barrier
Authors:
Jae-Keun Kim,
Kun-Rok Jeon,
Pranava K. Sivakumar,
Jaechun Jeon,
Chris Koerner,
Georg Woltersdorf,
Stuart S. P. Parkin
Abstract:
Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting and Josephson diodes, a key ingredient for future non-dissipative quantum devices, have recently been realized. Only a few examples of a vertical superconducting diode effect have been reported and its mechanism, especially whether i…
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Non-reciprocal electronic transport in a spatially homogeneous system arises from the simultaneous breaking of inversion and time-reversal symmetries. Superconducting and Josephson diodes, a key ingredient for future non-dissipative quantum devices, have recently been realized. Only a few examples of a vertical superconducting diode effect have been reported and its mechanism, especially whether intrinsic or extrinsic, remains elusive. Here we demonstrate a substantial supercurrent non-reciprocity in a van der Waals vertical Josephson junction formed with a Td-WTe2 barrier and NbSe2 electrodes that clearly reflects the intrinsic crystal structure of Td-WTe2. The Josephson diode efficiency increases with the Td-WTe2 thickness up to critical thickness, and all junctions, irrespective of the barrier thickness, reveal magneto-chiral characteristics with respect to a mirror plane of Td-WTe2. Our results, together with the twist-angle-tuned magneto-chirality of a Td-WTe2 double-barrier junction, show that two-dimensional materials promise vertical Josephson diodes with high efficiency and tunability.
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Submitted 23 March, 2023;
originally announced March 2023.
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Josephson diode effect from Cooper pair momentum in a topological semimetal
Authors:
Banabir Pal1,
Anirban Chakraborty,
Pranava K. Sivakumar,
Margarita Davydova,
Ajesh K. Gopi,
Avanindra K. Pandeya,
Jonas A. Krieger,
Yang Zhang,
Mihir Date,
Sailong Ju,
Noah Yuan,
Niels B. M. Schröter,
Liang Fu,
Stuart S. P. Parkin
Abstract:
In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant…
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In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant Josephson diode effect (JDE) in Josephson junctions formed from a type II Dirac semimetal, NiTe2. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value of ~60% when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover the asymmetry changes sign several times with increasing field. These characteristic features are accounted for in a theoretical model based on finite-momentum Cooper pairing derived from spin-helical topological surface states, in an otherwise centrosymmetric system. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to building novel superconducting computing devices using the Josephson diode effect.
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Submitted 21 December, 2021;
originally announced December 2021.
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Realization of the field-free Josephson Diode
Authors:
Heng Wu,
Yaojia Wang,
Yuanfeng Xu,
Pranava K. Sivakumar,
Chris Pasco,
Ulderico Filippozzi,
Stuart S. P. Parkin,
Yu-Jia Zeng,
Tyrel McQueen,
Mazhar N. Ali
Abstract:
The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we re…
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The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $ΔI_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation.
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Submitted 24 March, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5
Authors:
Yaojia Wang,
Shuoying Yang,
Pranava K. Sivakumar,
Brenden R. Ortiz,
Samuel M. L. Teicher,
Heng Wu,
Abhay K. Srivastava,
Chirag Garg,
Defa Liu,
Stuart S. P. Parkin,
Eric S. Toberer,
Tyrel McQueen,
Stephen D. Wilson,
Mazhar N. Ali
Abstract:
Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layer…
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Materials with transition metals in triangular lattices are of great interest for their potential combination of strong correlation, exotic magnetism and electronic topology. Kagome nets are of particular importance since the discovery of geometrically frustrated magnetism and topological band structures in crystals like Herbertsmithite and Fe3Sn2, respectively. KV3Sb5 was discovered to be a layered topological metal with a Kagome net of vanadium. Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and induced superconductivity over long junction lengths. Through magnetoresistance and current vs. phase measurements, we observed magnetic field swee** direction dependent magnetoresistance, and an anisotropic interference pattern with a Fraunhofer pattern for in-plane magnetic field, but a suppression of critical current for out-of-plane magnetic field. These results indicate an anisotropic internal magnetic field in K1-xV3Sb5 which influences the superconducting coupling in the junction, possibly giving rise to spin-triplet superconductivity. In addition, the observation of long-lived fast oscillations shows evidence of spatially localized conducting channels arising from edge states. These observations pave the way for studying unconventional superconductivity and Josephson device based on Kagome metals with electron correlation and topology.
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Submitted 26 January, 2023; v1 submitted 10 December, 2020;
originally announced December 2020.
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Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn$_{3}$Sn
Authors:
James M. Taylor,
Anastasios Markou,
Edouard Lesne,
Pranava Keerthi Sivakumar,
Chen Luo,
Florin Radu,
Peter Werner,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron mic…
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Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $σ_{\mathrm{xy}}$ ($μ_{0}H$ = 0 T) = 21 $\mathrmΩ^{-1}\mathrm{cm}^{-1}$ and coercive field $μ_{0}H_{\mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.
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Submitted 12 December, 2019; v1 submitted 9 October, 2019;
originally announced October 2019.
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Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir
Authors:
James M. Taylor,
Edouard Lesne,
Anastasios Markou,
Fasil Kidane Dejene,
Pranava Keerthi Sivakumar,
Simon Pöllath,
Kumari Gaurav Rana,
Neeraj Kumar,
Chen Luo,
Hanjo Ryll,
Florin Radu,
Florian Kronast,
Peter Werner,
Christian H. Back,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt…
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Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to topological spintronics. Amongst the cubic systems, for example, tetragonally distorted Mn$_{3}$Pt exhibits an intrinsic anomalous Hall effect (AHE). However, Mn$_{3}$Pt only enters a non-collinear magnetic phase close to the stoichiometric composition and at suitably large thicknesses. Therefore, we turn our attention to Mn$_{3}$Ir, the material of choice for use in exchange bias heterostructures. In this paper, we investigate the magnetic and electrical transport properties of epitaxially grown, face-centered-cubic $γ$-Mn$_{3}$Ir thin films with (111) crystal orientation. Relaxed films of 10 nm thickness exhibit an ordinary Hall effect, with a hole-type carrier concentration of (2.24 $\pm$ 0.08) $\times$ 10$^{23}$ cm$^{-3}$. On the other hand, TEM characterization demonstrates that ultrathin 3 nm films grow with significant in-plane tensile strain. This may explain a small remanent moment, observed at low temperatures, shown by XMCD spectroscopy to arise from uncompensated Mn spins. Of the order 0.02 $μ_{B}$ / atom, this dominates electrical transport behavior, leading to a small AHE and negative magnetoresistance. These results are discussed in terms of crystal microstructure and chiral domain behavior, with spatially resolved XML(C)D-PEEM supporting the conclusion that small antiferromagnetic domains, < 20 nm in size, of differing chirality account for the absence of observed Berry curvature driven magnetotransport effects.
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Submitted 9 April, 2019;
originally announced April 2019.
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MoTe2 : An uncompensated semimetal with extremely large magnetoresistance
Authors:
S. Thirupathaiah,
Rajveer Jha,
Banabir Pal,
J. S. Matias,
P. Kumar Das,
P. K. Sivakumar,
I. Vobornik,
N. C. Plumb,
M. Shi,
R. A. Ribeiro,
D. D. Sarma
Abstract:
Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe$_2$ and MoTe$_2$ the XMR is nonl…
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Transition-metal dichalcogenides (WTe$_2$ and MoTe$_2$) have drawn much attention, recently, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe$_2$ and MoTe$_2$ the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe$_2$, while it is yet to be clear in the case of MoTe$_2$ which has an identical crystal structure of WTe$_2$ at low temperatures. In this paper, we report low-energy electronic structure and Fermi surface topology of MoTe$_2$ using angle-resolved photoemission spectrometry (ARPES) technique and first-principle calculations, and compare them with that of WTe$_2$ to understand the mechanism of XMR. Our measurements demonstrate that MoTe$_2$ is an uncompensated semimetal, contrary to WTe$_2$ in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe$_2$. In this context, we also discuss the applicability of the existing other conjectures on the XMR of these compounds.
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Submitted 15 June, 2017; v1 submitted 19 May, 2017;
originally announced May 2017.
