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Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
Authors:
Ž. Gačević,
J. Grandal,
Q. Guo,
R. Kirste,
M. Varela,
Z. Sitar,
M. A. Sánchez García
Abstract:
Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrat…
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Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non hexagonal cross section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20 to 30 nm range. In addition, the formation of a thin (30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy (EELS) reveals the formation of continuous aluminum oxide (1 to 2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near band edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full width at half maximum of NBE emission, found at 20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band.
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Submitted 31 January, 2024;
originally announced February 2024.
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Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Authors:
Y. Wang,
K. Huynh,
M. E. Liao,
J. Tweedie,
P. Reddy,
M. H. Breckenridge,
R. Collazo,
Z. Sitar,
M. Bockowski,
X. Huang,
M. Wojcik,
M. S. Goorsky
Abstract:
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation effic…
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Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple axis X-ray data show that the implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that the strain-inducing point defects formed during implantation have reconfigured. However, annealing at temperatures of 1400 °C to 1500 °C (also one GPa N2 overpressure) eliminates the presence of the inversion domains. Annealing at these higher temperatures and for a longer time does not have any further impact on the strain state. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at the dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at higher temperatures and longer times. Earlier work [1] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures annealing cycles to activate Mg in GaN.
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Submitted 21 April, 2022;
originally announced April 2022.
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Structure of Native Two-dimensional Oxides on III--Nitride Surfaces
Authors:
J. Houston Dycus,
Kelsey J. Mirrielees,
Everett D. Grimley,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
Douglas L. Irving,
James M. LeBeau
Abstract:
When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used…
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When pristine material surfaces are exposed to air, highly reactive broken bonds can promote the formation of surface oxides with structures and properties differing greatly from bulk. Determination of the oxide structure, however, is often elusive through the use of indirect diffraction methods or techniques that probe only the outer most layer. As a result, surface oxides forming on widely used materials, such as group III-nitrides, have not been unambiguously resolved, even though critical properties can depend sensitively on their presence. In this work, aberration corrected scanning transmission electron microscopy reveals directly, and with depth dependence, the structure of native two--dimensional oxides that form on AlN and GaN surfaces. Through atomic resolution imaging and spectroscopy, we show that the oxide layers are comprised of tetrahedra--octahedra cation--oxygen units, similar to bulk $θ$--Al$_2$O$_3$ and $β$--Ga$_2$O$_3$. By applying density functional theory, we show that the observed structures are more stable than previously proposed surface oxide models. We place the impact of these observations in the context of key III-nitride growth, device issues, and the recent discovery of two-dimnesional nitrides.
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Submitted 13 August, 2017;
originally announced August 2017.
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Probing collective oscillation of $d$-orbital electrons at the nanoscale
Authors:
Rohan Dhall,
Derek Vigil-Fowler,
J. Houston Dycus,
Ronny Kirste,
Seiji Mita,
Zlatko Sitar,
Ramon Collazo,
James M. LeBeau
Abstract:
Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin…
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Here we demonstrate that high energy electrons can be used to explore the collective oscillation of $s$, $p$, and $d$ orbital electrons at the nanometer length scale. Using epitaxial AlGaN/AlN quantum wells as a test system, we observe the emergence of additional features in the loss spectrum with increasing Ga content. A comparison of the observed spectra with ab--initio theory reveals the origin of these spectral features is attributed to 3$d$--electrons contributed by Ga. We find that these modes differ in energy from the valence electron plasmons in Al$_{1-x}$Ga$_x$N due to the different polarizability of the $d$ electrons. Finally, we study the dependence of observed plasmon modes on Ga content, lending insight into plasmon coupling with electron--hole excitations.
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Submitted 12 August, 2017;
originally announced August 2017.
