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Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te
Authors:
I. Pletikosic,
T. Yilmaz,
B. Sinkovic,
A. P. Weber,
G. D. Gu,
T. Valla
Abstract:
Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a…
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Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, when the system is nearly a 3-dimensional Dirac semimetal. Both the existence of superconductivity near the 3-dimensional Dirac semimetal and the occurrence of insulator to superconductor transition in an isotropic material is highly unusual. We suggest that the observed phenomena are related to an intrinsic instability of a 3-dimensional Dirac semimetal state in (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te and "flattening" of the bulk valence and conduction bands as they acquire a Mexican hat-like dispersion on the inverted side of the phase diagram. This favors the pairing instability if the chemical potential is pinned to these flat regions.
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Submitted 15 November, 2023;
originally announced November 2023.
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Multi band Fermi surface in 1T-VSe2 and its implication for charge density wave phase
Authors:
Turgut Yilmaz,
Boris Sinkovic,
Elio Vescovo
Abstract:
Here, our angle resolved photoemission spectroscopy experiment reveled that the surface band structure of the 1T-VSe2 host electronic states that was not predicted or probed before. Earlier claims to support charge density wave phase can be all explained in terms of these new findings. Its Fermi surface found to be not gaped at any point of the Brillouin zone and war** effect on the electronic s…
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Here, our angle resolved photoemission spectroscopy experiment reveled that the surface band structure of the 1T-VSe2 host electronic states that was not predicted or probed before. Earlier claims to support charge density wave phase can be all explained in terms of these new findings. Its Fermi surface found to be not gaped at any point of the Brillouin zone and war** effect on the electronic structure, attributed to the lattice distortion previously, is due to the different dispersion of the multiple bands. Based on these new findings and interpretations, charge density wave induced modification on the electronic structure of 1T-VSe2 needs to be reconstructed in the future studies.
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Submitted 20 September, 2022;
originally announced September 2022.
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Spectroscopic evidence of high temperature superconductivity in VSe2
Authors:
Turgut Yilmaz,
Elio Vescovo,
Jerzy T. Sadowski,
Boris Sinkovic
Abstract:
High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and growth parameters. Evidence for the superconducting state comes from the simultaneous detection of spectral kink, quasiparticle peak, Fermi gap, and their evol…
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High-resolution angle-resolved photoemission experiments reveal subtle modifications of the surface electronic structure of VSe2. Most remarkably, we show that superconductivity can be induced in VSe2 by the right selection of substrate and growth parameters. Evidence for the superconducting state comes from the simultaneous detection of spectral kink, quasiparticle peak, Fermi gap, and their evolution with the temperature. The observation of Bogoliubov-like back-bending bands at low temperatures, signaling electron-hole pairing, further supports the presence of superconductivity in this system. The photoemission experiment also provides evidence for a formation of a pseudogap state at high temperatures, characterized by the progressive quenching of the quasiparticle peak feature coexisting with a persistent gap at the Fermi level, a behavior reminiscent of high-Tc superconductors. We attributed the origin of superconductivity in these VSe2 films to a modified Fermi surface combined with the formation of van Hove singularity points with a binding energy corresponding to the chemical potential of the system. Although Tc cannot be accurately determined from photoemission data, observations based on the survival temperature of the quasiparticle peak suggest that Tc could be as high as 100 ? 5 K and substantially higher than previous reports for any transition metal dichalcogenides.
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Submitted 11 October, 2021;
originally announced October 2021.
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Multi hole bands and quasi 2-dimensionality in Cr2Ge2Te6 studied by angle-resolved photoemission spectroscopy
Authors:
T. Yilmaz,
R. M. Geilhufe,
I. Pletikosić,
G. W. Fernando,
R. J. Cava,
T. Valla,
E. Vescovo,
B. Sinkovic
Abstract:
In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon ener…
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In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon energy dependent angle resolved photoemission experiment revealed that several of the hole bands exhibit weak dispersion with varied incident photon energy providing experimental signature for its two dimensionality. These findings can pave the way for further studies towards the application of Cr2Ge2Te6 in electronic devices.
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Submitted 9 December, 2020; v1 submitted 28 October, 2020;
originally announced October 2020.
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Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system
Authors:
Turgut Yilmaz,
Xiao Tong,
Zhongwei Dai,
Jerzy T. Sadowski,
Eike F. Schwier,
Kenya Shimada,
Sooyeon Hwang,
Kim Kisslinger,
Konstantine Kaznatcheev,
Elio Vescovo,
Boris Sinkovic
Abstract:
Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible…
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Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron do**. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.
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Submitted 23 June, 2020;
originally announced June 2020.
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Realization of a Type-II Nodal-Line Semimetal in Mg$_3$Bi$_2$
Authors:
Tay-Rong Chang,
Ivo Pletikosic,
Tai Kong,
Guang Bian,
Angus Huang,
Jonathan Denlinger,
Satya K. Kushwaha,
Boris Sinkovic,
Horng-Tay Jeng,
Tonica Valla,
Weiwei Xie,
Robert J. Cava
Abstract:
Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite si…
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Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite signs for their slopes along any direction perpendicular to the nodal line, has been proposed and realized in many compounds, whereas the exotic type-II NLS is very rare. Our first-principles calculations show that Mg$_3$Bi$_2$ is a material candidate that hosts a single type-II nodal loop around $Γ$. The band crossing is close to the Fermi level and the two crossing bands have the same sign in their slopes along the radial direction of the loop, indicating the type-II nature of the nodal line. Spin-orbit coupling generates only a small energy gap ($\sim$35 meV) at the nodal points and does not negate the band dispersion of Mg$_3$Bi$_2$ that yields the type-II nodal line. Based on this prediction we have synthesized Mg$_3$Bi$_2$ single crystals and confirmed the presence of the type-II nodal lines in the material. Our angle-resolved photoemission spectroscopy (ARPES) measurements agree well with our first-principles results and thus establish Mg$_3$Bi$_2$ as an ideal materials platform for studying the exotic properties of type-II nodal line semimetals.
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Submitted 24 November, 2017;
originally announced November 2017.
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Residual gas absorption effect on the electronic structure of Cr-doped Bi2Se3
Authors:
T Yilmaz,
W Hines,
S Alraddadi,
J I Budnick,
B Sinkovic
Abstract:
In this report, we identify the origin of the temperature dependence of the surface energy gap in impurity-doped topological insulators. The gap at the Dirac point and its variation with temperature were studied by using angle-resolved photoemission spectroscopy in Cr-doped Bi2Se3. Our valence band photoemission results revealed that the gap varies with temperature due to residual gas condensation…
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In this report, we identify the origin of the temperature dependence of the surface energy gap in impurity-doped topological insulators. The gap at the Dirac point and its variation with temperature were studied by using angle-resolved photoemission spectroscopy in Cr-doped Bi2Se3. Our valence band photoemission results revealed that the gap varies with temperature due to residual gas condensation on the sample surface with cooling. Adsorbate on the surface of the sample creates an electron do** effect that modifies the chemical potential of the system resulting in the change of the gap with variable temperature. Such electron do** can weaken the ferromagnetism and lead to a bulk band contribution in the transport measurements. Also, a larger energy gap is required to suppress the thermal excitations for the quantum anomalous Hall effect. Therefore, such effects can hinder the quantum anomalous Hall state at higher temperatures. Resolving this issue can pave the way for enhancing the observation temperature of the quantum anomalous Hall effect. Therefore, our findings can play a significant role in the discovery of the high-temperature quantum anomalous Hall effect in impurity-doped topological insulators.
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Submitted 7 November, 2017;
originally announced November 2017.
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Distinct Effects of Cr Bulk Do** and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3
Authors:
Turgut Yilmaza,
William Hines,
Fu-Chang Sun,
Ivo Pletikosić,
Joseph Budnick,
Tonica Valla,
Boris Sinkovic
Abstract:
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
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Submitted 10 June, 2017;
originally announced June 2017.
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Absence of a Proximity Effect in a Topological Insulator on a Cuprate Superconductor: Bi2Se3/Bi2Sr2CaCu2O8
Authors:
T. Yilmaz,
I. Pletikosic,
A. P. Weber,
J. T. Sadowski,
G. D. Gu,
A. N. Caruso,
B. Sinkovic,
T. Valla
Abstract:
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attra…
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Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
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Submitted 17 March, 2014;
originally announced March 2014.
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Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi$_2$Se$_3$
Authors:
Z. -H. Pan,
E. Vescovo,
A. V. Fedorov,
B. Sinkovic,
D. Gardner,
S. Chu,
Y. S. Lee,
G. D. Gu,
T. Valla
Abstract:
Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon do**, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin…
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Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon do**, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron do**. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from war** of the Fermi surface.
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Submitted 23 April, 2012;
originally announced April 2012.
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Impact of Valence States on Superconductivity of Oxygen Incorporated Iron Telluride and Iron Selenide Films
Authors:
D. Telesca,
Y. Nie,
J. I. Budnick,
B. O. Wells,
B. Sinkovic
Abstract:
We report on the local electronic structure of oxygen incorporated FeTe and FeSe films and how this relates to superconductivity observed in these films. In the case of FeTe, intially grown films are measured to be non-superconducting, but become superconducting following oxygen incorporation. In FeSe the opposite happens, initially grown films are measured to be superconducting, but experience a…
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We report on the local electronic structure of oxygen incorporated FeTe and FeSe films and how this relates to superconductivity observed in these films. In the case of FeTe, intially grown films are measured to be non-superconducting, but become superconducting following oxygen incorporation. In FeSe the opposite happens, initially grown films are measured to be superconducting, but experience a quenching of superconductivity following oxygen incorporation. Total Fluorescence Yield (TFY) X-ray absorption experiments show that oxygen incorporation changes the initial Fe valence state in both the initially grown FeTe and FeSe films to mainly Fe3+ in the oxygen incorporated films. In contrast we observe that while Te moves to a mixed Te0/Te4+ valence state, the Se always remains Se0. This work highlights how different responses of the electronic structure by the respective chalcogenides to oxidation could be related to the mechanisms which are inducing superconductivity in FeTe and quenching superconductivity in FeSe.
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Submitted 10 February, 2011;
originally announced February 2011.
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Superconductivity Induced in Iron Telluride Films by Low Temperature Oxygen Incorporation
Authors:
Yuefeng Nie,
Donald Telesca,
Joseph I. Budnick,
Boris Sinkovic,
Barrett O. Wells
Abstract:
We report superconductivity induced in films of the non-superconducting, antiferromagnetic parent material FeTe by low temperature oxygen incorporation in a reversible manner. X-ray absorption shows that oxygen do** changes the nominal Fe valence state from 2+ in the non-superconducting state to mainly 3+ in the superconducting state. Thus superconductivity in O doped FeTe occurs in a quite diff…
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We report superconductivity induced in films of the non-superconducting, antiferromagnetic parent material FeTe by low temperature oxygen incorporation in a reversible manner. X-ray absorption shows that oxygen do** changes the nominal Fe valence state from 2+ in the non-superconducting state to mainly 3+ in the superconducting state. Thus superconductivity in O doped FeTe occurs in a quite different charge and strain state than the more common FeTe$_{1-x}$Se$_x$. This work also suggests a convenient path for conducting do** experiments in-situ with many measurement techniques.
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Submitted 16 March, 2010; v1 submitted 22 December, 2009;
originally announced December 2009.
