Showing 1–4 of 4 results for author: Sinha, U

The effect of environmental coupling on tunneling of quasiparticles in Josephson junctions

Authors: Mohammad H. Ansari, Frank K. Wilhelm, Urbasi Sinha, Aninda Sinha

Abstract: We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the supe… ▽ More We study quasiparticle tunneling in Josephson tunnel junctions embedded in an electromagnetic environment. We identify tunneling processes that transfer electrical charge and couple to the environment in a way similar to that of normal electrons, and processes that mix electrons and holes and are thus creating charge superpositions. The latter are sensitive to the phase difference between the superconductor and are thus limited by phase diffusion even at zero temperature. We show that the environmental coupling is suppressed in many environments, thus leading to lower quasiparticle decay rates and thus better superconductor qubit coherence than previously expected. Our approach is nonperturbative in the environmental coupling strength. △ Less

Submitted 7 November, 2013; v1 submitted 20 November, 2012; originally announced November 2012.

Comments: 13 pages, 2 figures

Journal ref: Supercond. Sci. Technol. 26 (2013) 125013

Temperature-dependent electron mobility in InAs nanowires

Authors: Nupur Gupta, Yipu Song, Gregory W. Holloway, Urbasi Sinha, Chris Haapamaki, Ray R. LaPierre, Jonathan Baugh

Abstract: Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from io… ▽ More Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data. △ Less

Submitted 23 May, 2013; v1 submitted 12 October, 2012; originally announced October 2012.

Comments: 19 pages, 7 figures

Journal ref: Nanotechnology 24, 225202 (2013)

Improving high-T_c dc-SQUID performance by junction asymmetry

Authors: Urbasi Sinha, Aninda Sinha, Frank K. Wilhelm

Abstract: We study noise and noise energy of a high-T$_c$ dc SQUID fabricated on a high-$ε_R$ substrate whose conduction properties are given by transmission line physics. We show that transmission line resonances greatly enhance the noise. Remarkably, resistance asymmetry enhances these resonances even more. However, as the transfer function scales the same way, the noise energy is reduced by asymmetry g… ▽ More We study noise and noise energy of a high-T$_c$ dc SQUID fabricated on a high-$ε_R$ substrate whose conduction properties are given by transmission line physics. We show that transmission line resonances greatly enhance the noise. Remarkably, resistance asymmetry enhances these resonances even more. However, as the transfer function scales the same way, the noise energy is reduced by asymmetry greatly enhancing the flexibility and performance of the SQUID. △ Less

Submitted 5 April, 2009; v1 submitted 22 December, 2008; originally announced December 2008.

Comments: 9 pages, 4 figures. v2: published version

Journal ref: Supercond. Sci. Technol. 22 (2009) 055002

On Transmission Line Resonances in High T$_C$ dc SQUIDs

Authors: Urbasi Sinha, Aninda Sinha, Edward Tarte

Abstract: In this paper, we study transmission line resonances in high $T_C$ dc SQUIDs. These resonances are exhibited in the characteristics of SQUIDs which are fabricated on substrates with high dielectric constant, such as strontium titanate. The power balance equation is analytically derived both for symmetric and asymmetric SQUIDs. Using this, we investigate SQUID current - voltage $I(V)$, voltage -… ▽ More In this paper, we study transmission line resonances in high $T_C$ dc SQUIDs. These resonances are exhibited in the characteristics of SQUIDs which are fabricated on substrates with high dielectric constant, such as strontium titanate. The power balance equation is analytically derived both for symmetric and asymmetric SQUIDs. Using this, we investigate SQUID current - voltage $I(V)$, voltage - flux $V(Φ)$ and voltage modulation $ΔV$ characteristics. △ Less

Submitted 19 June, 2008; originally announced June 2008.

Comments: 15 pages, 6 figures

Journal ref: Supercond. Sci. Technol. 21 (2008) 085021