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Antiferromagnetic ordering and glassy nature in NASICON type NaFe$_2$PO$_4$(SO$_4$)$_2$
Authors:
Manish Kr. Singh,
A. K. Bera,
Ajay Kumar,
S. M. Yusuf,
R. S. Dhaka
Abstract:
We investigate crystal structure and magnetic properties including spin relaxation and magnetocaloric effect in NASICON type NaFe$_2$PO$_4$(SO$_4$)$_2$ sample. The Rietveld refinement of x-ray and neutron diffraction patterns show a rhombohedral crystal structure with the R$\bar{3}$c space group. The core-level spectra confirm the desired oxidation state of constituent elements. The {\it dc}--magn…
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We investigate crystal structure and magnetic properties including spin relaxation and magnetocaloric effect in NASICON type NaFe$_2$PO$_4$(SO$_4$)$_2$ sample. The Rietveld refinement of x-ray and neutron diffraction patterns show a rhombohedral crystal structure with the R$\bar{3}$c space group. The core-level spectra confirm the desired oxidation state of constituent elements. The {\it dc}--magnetic susceptibility ($χ$) behavior in zero field-cooled (ZFC) and field-cooled (FC) modes show the ordering temperature $\approx$50~K. Interestingly, the analysis of temperature dependent neutron diffraction patterns reveal an A-type antiferromagnetic (AFM) structure with the ordered moment of 3.8 $μ_{B}$/Fe$^{3+}$ at 5~K, and a magnetostriction below $T_{\rm N}=$ 50~K. Further, the peak position in the {\it ac}--$χ$ is found to be invariant with the excitation frequency supporting the notion of dominating AFM transition. Also, the unsaturated isothermal magnetization curve supports the AFM ordering of the moments; however, the observed coercivity suggests the presence of weak ferromagnetic (FM) correlations at 5~K. On the other hand, a clear bifurcation between ZFC and FC curves of {\it dc}--$χ$ and the observed decrease in peak height of {\it ac}--$χ$ with frequency suggest for the complex magnetic interactions. The spin relaxation behavior in thermo-remanent magnetization and aging measurements indicate the glassy states at 5~K. Moreover, the Arrott plots and magnetocaloric analysis reveal the AFM--FM interactions in the sample at lower temperatures.
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Submitted 13 March, 2024;
originally announced March 2024.
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Thermal conductivity of bottle-brush polymers
Authors:
Manoj Kumar Maurya,
Tobias Laschuetza,
Manjesh Kumar Singh,
Debashish Mukherji
Abstract:
Using molecular dynamics (MD) simulations of a generic model, we investigate heat propagation in bottle--brush polymers (BBP). An architecture is referred to as a BBP when a linear (backbone) polymer is grafted with the side chains of different length $N_{\rm s}$ and grafting density $ρ_{\rm g}$, which control the bending stiffness of a backbone. A BBP is of particular interest due to two competin…
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Using molecular dynamics (MD) simulations of a generic model, we investigate heat propagation in bottle--brush polymers (BBP). An architecture is referred to as a BBP when a linear (backbone) polymer is grafted with the side chains of different length $N_{\rm s}$ and grafting density $ρ_{\rm g}$, which control the bending stiffness of a backbone. A BBP is of particular interest due to two competing mechanics: increased backbone stiffness, via $N_{\rm s}$ and $ρ_{\rm g}$, increases the thermal transport coefficient $κ$, while the presence of side chains provides additional pathways for heat leakage. We show how a delicate competition between these two effects controls $κ$. These results reveal that going from a weakly grafting ($ρ_{\rm g} < 1$) to a highly grafting ($ρ_{\rm g} \ge 1$) regime, $κ$ changes non--monotonically that is independent of $N_{\rm s}$. The effect of side chain mass on $κ$ and heat flow in the BBP melts are also discussed.
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Submitted 3 February, 2024; v1 submitted 1 December, 2023;
originally announced December 2023.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of do** control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high do** densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
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Piezo-resistive pressure sensor based on CVD-grown ZnO nanowires on Polyethylene Tetrathalate substrate
Authors:
Manisha Kumari,
Rakesh K. Prasad,
Manish K. Singh,
Parameswar K. Iyer,
Dilip K. Singh
Abstract:
Recent developments in the domain of electronic materials and devices have attracted the interest of researchers toward flexible and printable electronic components like organic transistors, printable electrodes and sensors. Zinc Oxide (ZnO) nanowires (NWs) possess a number of excellent properties like high mobility, large exciton binding energy and the direct-band gap in addition to large piezoel…
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Recent developments in the domain of electronic materials and devices have attracted the interest of researchers toward flexible and printable electronic components like organic transistors, printable electrodes and sensors. Zinc Oxide (ZnO) nanowires (NWs) possess a number of excellent properties like high mobility, large exciton binding energy and the direct-band gap in addition to large piezoelectric coefficients. Here, we report on flexible piezo-resistive sensor based on Indium tin oxide (ITO)-coated Polyethylene tetrathalate (PET) substrate. The device shows sensitivity in terms of change in resistance from 100 Ω to 2.4 KΩ at an applied potential of 5V upon bending from flat to 95 degrees. The 1-D nanowire flexible device in its flat state shows saturated output current. We observed ten folds enhanced variation as compared to previous reports. Improved sensitivity was observed in our experiments due to fewer defects in CVD-grown NWs as compared to others where hydrothermally grown nanowires were used. The methodology of device fabrication reported here requires less time and enables efficient devices for the realization of flexible and wearable technology.
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Submitted 16 June, 2023;
originally announced July 2023.
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Diffusion mechanism and electrochemical investigation of 1T phase Al-MoS$_{2}$@rGO nano-composite as a high-performance anode for sodium-ion batteries
Authors:
Manish Kr. Singh,
Jayashree Pati,
Deepak Seth,
Jagdees Prasad,
Manish Agarwal,
M. Ali Haider,
Jeng-Kuei Chang,
Rajendra S. Dhaka
Abstract:
We report the electrochemical investigation of 5% Al doped MoS$_2$@rGO composite as a high-performance anode for sodium (Na)-ion batteries. The x-ray diffraction (XRD), Raman spectroscopy and high-resolution transmission electron microscopy characterizations reveal that the Al do** increase the interlayer spacing of (002) plane of MoS$_2$ nanosheets and form a stable 1T phase. The galvanostatic…
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We report the electrochemical investigation of 5% Al doped MoS$_2$@rGO composite as a high-performance anode for sodium (Na)-ion batteries. The x-ray diffraction (XRD), Raman spectroscopy and high-resolution transmission electron microscopy characterizations reveal that the Al do** increase the interlayer spacing of (002) plane of MoS$_2$ nanosheets and form a stable 1T phase. The galvanostatic charge-discharge measurements show the specific capacity stable around 450, 400, 350, 300 and 200 mAhg$^{-1}$ at current densities of 0.05, 0.1, 0.3, 0.5 and 1~Ag$^{-1}$, respectively. Also, we observe the capacity retentions of 86% and 66% at 0.1 and 0.3 Ag$^{-1}$, respectively, over 200 cycles with a consistent Coulombic efficiency of nearly 100%. The cyclic voltammetry, galvanostatic intermittent titration technique, and electrochemical impedance spectroscopy are used to find the kinetic behavior and the obtained value of diffusion coefficient falls in the range of 10$^{-10}$ to 10$^{-12}$ cm$^2$s$^{-1}$. Intriguingly, the in-situ EIS also explains the electrochemical kinetics of the electrode at different charge-discharge states with the variation of charge transfer resistance. Moreover, the post cycling investigation using ex-situ XRD and photoemission spectroscopy indicate the coexistence of 1T/2H phase and field-emission scanning electron microscopy confirm the stable morphology after 500 cycles. Also, the Na-ion transport properties are calculated for 1T Al--MoS$_2$@rGO interface and Al--MoS$_2$--MoS$_2$ interlayer host structure by theoretical calculations using density functional theory.
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Submitted 13 October, 2022;
originally announced October 2022.
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Electrochemical investigation of MoSeTe as an anode for sodium-ion batteries
Authors:
Priya Mudgal,
Himani Arora,
Jayashree Pati,
Manish K. Singh,
Mahantesh Khetri,
Rajendra S. Dhaka
Abstract:
Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synth…
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Sodium ion batteries (SIBs) are considered as an efficient alternative for lithium-ion batteries (LIBs) owing to the natural abundance and low cost of sodium than lithium. In this context, the anode materials play a vital role in rechargeable batteries to acquire high energy and power density. In order to demonstrate transition metal dichalcogenide (TMD) as potential anode materials, we have synthesized MoSeTe sample by conventional flux method, and the structure and morphology are characterized using x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy. These characterisations confirm the hexagonal crystal symmetry with p63/mmc space group and layered morphology of MoSeTe. We investigate the electrochemical performance of a MoSeTe as a negative electrode (anode) for SIBs in the working potential range of 0.01 to 3.0~V. In a half-cell configuration, the MoSeTe as an anode and Na metal as counter/reference electrode exhibits significant initial specific discharge capacities of around 475 and 355 mAhg$^{-1}$ at current densities of 50 and 100 mAg$^{-1}$, respectively. However, the capacity degraded significantly like $\approx$200~mAhg$^{-1}$ in 2nd cycle, but having $\approx$100\% Coulombic efficiency, which suggest for further modification in this material to improve its stability. The cyclic voltammetry (CV) study reveals the reversibility of the material after 1st cycle, resulting no change in the initial peak positions. The electrochemical impedance spectroscopy (EIS) measurements affirms the smaller charge transfer resistance of fresh cells than the cells after 10th cycle. Moreover, the extracted diffusion coefficient is found to be of the order of 10$^{-14}$ cm$^2$s$^{-1}$.
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Submitted 23 August, 2022;
originally announced August 2022.
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Atomistically-informed modeling of point defect clustering and evolution in irradiated ThO2
Authors:
Sanjoy Kumar Mazumder,
Maniesha Kaur Salaken Singh,
Tomohisa Kumagai,
Anter El-Azab
Abstract:
A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the poi…
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A cluster dynamics (CD) model has been developed to investigate the nucleation and growth of point defect clusters, i.e., interstitial prismatic loops and nanoscale and sub-nanoscale voids, in ThO2 during irradiation by energetic particles. The model considers cluster off-stoichiometry due to the asymmetry of point defect generation on the O and Th sublattices under irradiation, as well as the point defect diffusivities and the defect binding energies to clusters. The energies were established using detailed molecular dynamics simulations considering the statistical variability of cluster configuration. A high-order adaptive time-integration has been used to solve the model. The predicted loop density and their average size is in good agreement with reported experimental observations for proton irradiated ThO2 at 600oC. The model did not predict void evolution due to the sluggish kinetics of cation vacancies, explaining the absence of voids in proton irradiated ThO2 (and other oxides) at relatively low temperatures.
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Submitted 13 June, 2022;
originally announced June 2022.
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Purcell enhancement of erbium ions in TiO$_{2}$ on silicon nanocavities
Authors:
Alan M. Dibos,
Michael T. Solomon,
Sean E. Sullivan,
Manish K. Singh,
Kathryn E. Sautter,
Connor P. Horn,
Gregory D. Grant,
Yulin Lin,
Jianguo Wen,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to d…
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Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects such as erbium suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here we present a scalable approach towards CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of $5\times10^{4}$ and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step towards realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
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Submitted 20 April, 2022;
originally announced April 2022.
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Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon
Authors:
Manish Kumar Singh,
Gary Wolfowicz,
Jianguo Wen,
Sean E. Sullivan,
Abhinav Prakash,
Alan M. Dibos,
David D. Awschalom,
F. Joseph Heremans,
Supratik Guha
Abstract:
Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thi…
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Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top cap** layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films.
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Submitted 27 February, 2022; v1 submitted 10 February, 2022;
originally announced February 2022.
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Computational Indentation in Highly Cross-linked Polymer Networks
Authors:
Manoj Kumar Maurya,
Céline Ruscher,
Debashish Mukherji,
Manjesh Kumar Singh
Abstract:
Indentation is a common experimental technique to study the mechanics of polymeric materials. The main advantage of using indentation is because this provides a direct correlation between the microstructure and the small-scale mechanical response, which is otherwise difficult within the standard tensile testing. Here, majority of studies have investigated hydrogels, microgels and/or elastomers. Ho…
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Indentation is a common experimental technique to study the mechanics of polymeric materials. The main advantage of using indentation is because this provides a direct correlation between the microstructure and the small-scale mechanical response, which is otherwise difficult within the standard tensile testing. Here, majority of studies have investigated hydrogels, microgels and/or elastomers. However, a lesser investigated system is the indentation in highly cross-linked polymer (HCP) networks, where the complex network structure plays a key role in dictating their physical properties. In this work, we investigate the structure-property relationship in HCP networks using the computational indentation of a generic model. We establish a correlation between the local bond breaking, the network rearrangement, and the small-scale mechanics. The results are compared with the elastic-plastic deformation model. HCPs harden upon indentation.
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Submitted 5 May, 2022; v1 submitted 8 February, 2022;
originally announced February 2022.
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Dual Measurements of Temporal and Spatial Coherence of Light in a Single Experimental Setup using a Modified Michelson Interferometer
Authors:
Mohit Kumar Singh,
Shouvik Datta
Abstract:
An experimental technique is developed to simultaneously measure both temporal and spatial coherences of a light source by altering a standard Michelson interferometer, which has been primarily used for measuring temporal coherence only. Instead of using simple plane mirrors, two retroreflectors and their longitudinal and lateral movements are utilized to incorporate spatial coherence measurement…
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An experimental technique is developed to simultaneously measure both temporal and spatial coherences of a light source by altering a standard Michelson interferometer, which has been primarily used for measuring temporal coherence only. Instead of using simple plane mirrors, two retroreflectors and their longitudinal and lateral movements are utilized to incorporate spatial coherence measurement using this modified Michelson interferometer. In general, one uses Young double slit interferometer to measure spatial coherence. However, this modified interferometer can be used as an optical setup kept at room temperature outside a cryostat to measure spatio-temporal coherence of a light source placed at cryogenic temperatures. This avoids the added complexities of modulation of interference fringe patterns due to single slit diffraction as well. The process of mixing of spatial and temporal parts of coherences is intrinsic to existing methods for dual measurements. We addressed these issues of spatiotemporal mixing and we introduced a method of temporal filtering in spatial coherence measurements. We also developed a curve overlap method which is used to extend the range of the experimental setup during temporal coherence measurements without compromising the precision. Together, these methods provide major advantages over plane mirror based standard interferometric systems for dual measurements in avoiding systematic errors which lead to inaccuracies especially for light sources with low coherences.
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Submitted 19 October, 2021;
originally announced October 2021.
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0D-2D Heterostructure for making very Large Quantum Registers using itinerant Bose-Einstein Condensate of Excitons
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Maryam Al Huwayz,
Mohamed Henini,
Shouvik Datta
Abstract:
Presence of coherent resonant tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure de…
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Presence of coherent resonant tunneling in quantum dot (zero-dimensional) - quantum well (two-dimensional) heterostructure is necessary to explain the collective oscillations of average electrical polarization of excitonic dipoles over a macroscopically large area. This was measured using photo excited capacitance as a function of applied voltage bias. Resonant tunneling in this heterostructure definitely requires momentum space narrowing of charge carriers inside the quantum well and that of associated indirect excitons, which indicates bias dependent itinerant Bose-Einstein condensation of excitons. Observation of periodic variations in negative quantum capacitance points to in-plane coulomb correlations mediated by long range spatial ordering of indirect, dipolar excitons. Enhanced contrast of quantum interference beats of excitonic polarization waves even under white light and observed Rabi oscillations over a macroscopically large area also support the presence of density driven excitonic condensation having long range order. Periodic presence (absence) of splitting of excitonic peaks in photocapacitance spectra even demonstrate collective coupling (decoupling) between energy levels of the quantum well and quantum dots with applied biases, which can potentially be used for quantum gate operations. All these observations point to experimental control of macroscopically large, quantum state of a two-component Bose-Einstein condensate of excitons in this quantum dot - quantum well heterostructure. Therefore, in principle, millions of two-level excitonic qubits can be intertwined to fabricate large quantum registers using such hybrid heterostructure by controlling the local electric fields and also by varying photoexcitation intensities of overlap** light spots.
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Submitted 19 June, 2023; v1 submitted 28 July, 2021;
originally announced July 2021.
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Tuning thermal transport in highly cross-linked polymers by bond induced void engineering
Authors:
Debashish Mukherji,
Manjesh Kumar Singh
Abstract:
Tuning the heat flow is fundamentally important for the design of advanced functional materials. Here, polymers are of particular importance because they provide different pathways for the energy transfer. More specifically, the heat flow between two covalently bonded monomers is over 100 times faster than between the two non-bonded monomers interacting via van der Waals (vdW) forces. Therefore, t…
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Tuning the heat flow is fundamentally important for the design of advanced functional materials. Here, polymers are of particular importance because they provide different pathways for the energy transfer. More specifically, the heat flow between two covalently bonded monomers is over 100 times faster than between the two non-bonded monomers interacting via van der Waals (vdW) forces. Therefore, the delicate balance between these two contributions often provide a guiding tool for the tunability in thermal transport coefficient k of the polymeric materials. Traditionally most studies have investigated k in the linear polymeric materials, the recent interests have also been directed towards the highly cross-linked polymers (HCP). In this work, using the generic molecular dynamics simulations we investigate the factors effecting k of HCP. We emphasize on the importance of the cross-linking bond types and its influence on the network microstructure with a goal to provide a guiding principle for the tunability in k. While these simulation results are discussed in the context of the available experimental data, we also make predictions.
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Submitted 17 December, 2020;
originally announced December 2020.
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Why Do Elastin-Like Polypeptides Possibly Have Different Solvation Behaviors in Water-Ethanol and Water-Urea Mixtures?
Authors:
Yani Zhao,
Manjesh K. Singh,
Kurt Kremer,
Robinson Cortes-Huerto,
Debashish Mukherji
Abstract:
The solvent quality determines the collapsed or the expanded state of a polymer. For example, a polymer dissolved in a poor solvent collapses, whereas in a good solvent it opens up. While this standard understanding is generally valid, there are examples when a polymer collapses even in a mixture of two good solvents. This phenomenon, commonly known as co-non-solvency, is usually associated with s…
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The solvent quality determines the collapsed or the expanded state of a polymer. For example, a polymer dissolved in a poor solvent collapses, whereas in a good solvent it opens up. While this standard understanding is generally valid, there are examples when a polymer collapses even in a mixture of two good solvents. This phenomenon, commonly known as co-non-solvency, is usually associated with smart polymers. Moreover, recent experiments have shown that the elastin-like polypeptides (ELPs) show co-non-solvency behavior in aqueous-ethanol mixtures. In this study, we investigate the phase behavior of ELPs in aqueous binary mixtures using molecular dynamics simulations of all-atom and complementary explicit solvent generic models. The model is parameterized by map** the solvation free energy obtained from the all-atom simulations onto the generic interaction parameters. For this purpose, we derive segment based generic parameters for four different peptides, namely proline (P), valine (V), glycine (G) and alanine (A). Here we compare the conformational behavior of two ELP sequences, namely VPGGG and VPGVG, in aqueous-ethanol and -urea mixtures. Consistent with recent experiments, we find that ELPs show co-non-solvency in aqueous-ethanol mixtures. Ethanol molecules have preferential binding with all ELP residues and thus driving the coil-to-globule transition. On the contrary, ELP conformations show weak variation in aqueous-urea mixtures. Our simulations suggest that the glycine residues dictate the overall behavior of ELPs in aqueous-urea, where urea molecules have a rather weak preferential binding with glycine, i.e., less than kT. While the validation of the latter findings will require more detailed experimental investigation, the results presented here may provide a new twist to the present understanding of cosolvent interactions with peptides and proteins.
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Submitted 9 March, 2020;
originally announced March 2020.
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Phase Coherent Oscillations of Excitonic Photocapacitance and Bose-Einstein Condensation in Quantum Coupled 0D-2D Heterostructure
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Maryam Al Huwayz,
Mohamed Henini,
Shouvik Datta
Abstract:
We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing bias demonstrate strong coupling between InAs quantum dots (0D) and triangular GaAs quantum well (2D). Coherent resonant tunneling in this 0D-2D heterostructure…
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We report quantum coherent oscillations of photocapacitance of a double-barrier resonant tunneling heterostructure with bias at 10 K. Periodic presence and absence of sharp excitonic transitions in photocapacitance spectra with increasing bias demonstrate strong coupling between InAs quantum dots (0D) and triangular GaAs quantum well (2D). Coherent resonant tunneling in this 0D-2D heterostructure establishes the momentum space narrowing of excitonic Bose-Einstein Condensation. Drastic increase of indirect exciton densities below 70 K reveal that excitonic wave functions anchored with each InAs quantum dots can laterally overlap across wide region around 200 micron to create a macroscopic quantum state of excitonic Bose-Einstein condensate. This itself points out the difficulties encountered in the usual 2D-2D bilayers and coupled quantum well samples used earlier to study excitonic BEC. Finally, we predict how coupled quantum-dots and quantum-well heterostructures can display excitonic Bose-Einstein condensation at even higher temperatures.
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Submitted 9 September, 2020; v1 submitted 23 October, 2019;
originally announced October 2019.
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Experimental evidences of trions and Fermi edge singularity in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance spectroscopy
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Y. Galvao Gobato,
Mohamed Henini,
Shouvik Datta
Abstract:
In this paper, we show how photocapacitance spectra can probe two dimensional excitonic complexes and Fermi edge singularity as a function of applied bias around 100 K. In lower density regimes (<1x1011cm^-2), the appearance of two distinct peaks in the spectra are identified as a signature of coexistence of both excitons and positively charged trions. We estimate the binding energy of these trion…
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In this paper, we show how photocapacitance spectra can probe two dimensional excitonic complexes and Fermi edge singularity as a function of applied bias around 100 K. In lower density regimes (<1x1011cm^-2), the appearance of two distinct peaks in the spectra are identified as a signature of coexistence of both excitons and positively charged trions. We estimate the binding energy of these trions as ~2.0 meV. In the higher density regimes (>1x10^11 cm^-2), we observe a sharp spectral transition from trions to asymmetric shaped Fermi edge singularity in the photocapacitance spectra around a particular reverse bias. However, these signatures are absent from the photoluminescence spectra measured under identical circumstances. Such dissimilarities clearly point out that different many body physics govern these two spectral measurements. We also argue why such quantum confined dipoles of spatially indirect trions can have thermodynamically finite probability to survive even around 100 K. Finally, our observations demonstrate that photocapacitance technique, which was seldom used to detect trions in the past, can also be useful to detect the traces of these spatially indirect excitonic complexes as well as Fermi edge singularity even at 100 K. This is mainly due to enhanced sensitivity of such dielectric measurements to dipolar changes within such heterojunction.
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Submitted 17 March, 2018;
originally announced March 2018.
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Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
Authors:
Amit Bhunia,
Mohit Kumar Singh,
Y. Galvao Gobato,
Mohamed Henini,
Shouvik Datta
Abstract:
We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect excitons formed around the Gamma-AlAs barrier. Unlike DC-photocurrent spectra, frequency dependent photocapacitance spectra interestingly red shift, sharpen up an…
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We investigated excitonic absorptions in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room temperature. Photocapacitance spectra show well defined resonance peak of indirect excitons formed around the Gamma-AlAs barrier. Unlike DC-photocurrent spectra, frequency dependent photocapacitance spectra interestingly red shift, sharpen up and then decrease with increasing tunneling at higher biases. Such dissimilarities clearly point out that different exciton dynamics govern these two spectral measurements. We also argue why such quantum confined dipoles of indirect excitons can have thermodynamically finite probabilities to survive even at room temperature. Finally, our observations demonstrate that photocapacitance technique, which was seldom used to detect excitons in the past, is useful for selective detection and experimental tuning of relatively small numbers (~10^11/cm2) of photo-generated indirect excitons having large effective dipole moments in this type of quasi-two dimensional heterostructures.
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Submitted 1 February, 2018; v1 submitted 19 May, 2017;
originally announced May 2017.
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Effect of Mg substitution in Sr2SiO4:Eu2+ nanophosphors for blue and white emission at near UV excitation
Authors:
Sumit Dubey,
Pratik Deshmukh,
S. Satapathy,
M. K. Singh,
P. K. Gupta
Abstract:
Nanophosphors of (Sr0.98-xMgxEu0.02)2SiO4 (x=0, 0.18, 0.38, 0.58 and 0.78) were prepared through low temperature solution combustion method and their luminescence properties were studied. The emission peak for Eu2+ doped Sr2SiO4 nanophosphor is observed at ~490 nm and ~553 nm corresponding to two Sr2+ sites Sr(I) and Sr(II) respectively for 395 nm excitation but the addition of Mg2+ dopant in Sr2S…
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Nanophosphors of (Sr0.98-xMgxEu0.02)2SiO4 (x=0, 0.18, 0.38, 0.58 and 0.78) were prepared through low temperature solution combustion method and their luminescence properties were studied. The emission peak for Eu2+ doped Sr2SiO4 nanophosphor is observed at ~490 nm and ~553 nm corresponding to two Sr2+ sites Sr(I) and Sr(II) respectively for 395 nm excitation but the addition of Mg2+ dopant in Sr2SiO4 leads to suppression of ~553 nm emission peak due to absence of energy levels of Sr (II) sites which results in a single broad emission at ~460nm. It was shown that the emission peak blue shifted with increase in Mg concentration which may be attributed to change in crystal field environment around Sr(I) sites. Therefore the (Mg0.78Sr0.20Eu0.02)2SiO4: Eu2+ nanophosphor can be used for blue emission and the Sr2SiO4:Eu0.042+ for green-yellow emission at 395 nm excitations. The CIE coordinates for mixed powders of (Mg0.78Sr0.20Eu0.02)2SiO4 and Sr2SiO4:Eu0.042+ (in 1: 1 ratio) falls in the white region demonstrating the possible use of the mixture in white light generation using near UV excitation source.
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Submitted 1 December, 2015;
originally announced December 2015.
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Modification in structural, dielectric and magnetic properties of La and Nd co-substituted epitaxial BiFeO3 thin films
Authors:
Anju Ahlawat,
S. Satapathy,
V. G. Sathe,
R. J. Choudhary,
M. K. Singh,
Ravi Kumar,
T. K. Sharma,
P. K. Gupta
Abstract:
The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were deposited using pulsed laser deposition. The structural change in co doped La and Nd BFO thin films which was caused by the changes of force constant i…
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The influence of La and Nd co-substitution on the structural and magnetic properties of BiFeO3 (BFO) thin films was examined. Epitaxial thin films of pure and, La and Nd co-doped BFO on the SrRuO3 buffered single crystal SrTiO3 (001) substrate were deposited using pulsed laser deposition. The structural change in co doped La and Nd BFO thin films which was caused by the changes of force constant in the crystal lattice induced by ionic radii mismatch was investigated. Raman spectroscopy studies manifest the structural change in doped BFO films from rhombohedral to monoclinic distorted phase which is induced by the co substitution of La and Nd. Room temperature magnetic hysteresis curves indicated that saturation magnetization is enhanced in the doped film with saturation magnetization of ~20 emu/cm3. The dielectric and magnetic properties are effectively improved in BLNFO films compared to pure BFO thin films.
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Submitted 18 June, 2013;
originally announced June 2013.
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Almeida-Thouless Line in BiFeO3: Is Bismuth Ferrite a mean field spin glass?
Authors:
Manoj K. Singh,
Ram S. Katiyar,
W. Prellier,
J. F. Scott
Abstract:
Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-g…
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Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-glass behavior and mean field system.
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Submitted 14 November, 2008;
originally announced November 2008.
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One-magnon (electromagnon) light scattering in BiFeO3 single crystals
Authors:
Manoj K. Singh,
Ram S. Katiyar,
J. F. Scott
Abstract:
We observed Raman scattering from magnon in frequency range from 10 to 65 cm-1 in BiFeO3 single crystals at cryogenic temperatures; the temperature dependence of the magnon frequency at 18.2 cm-1 approximates an S=5/2 Brillouin function up to the temperature (280 K) at which the magnon becomes overdamped. The diverging cross-section and the frequency-shift at 140K and 200 K implies a magnon-reor…
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We observed Raman scattering from magnon in frequency range from 10 to 65 cm-1 in BiFeO3 single crystals at cryogenic temperatures; the temperature dependence of the magnon frequency at 18.2 cm-1 approximates an S=5/2 Brillouin function up to the temperature (280 K) at which the magnon becomes overdamped. The diverging cross-section and the frequency-shift at 140K and 200 K implies a magnon-reorientation transition as in orthoferrites. Magnons in polar materials such as BiFeO3 are often termed electromagnons meaning that they possess an electric dipole moment due to magnetoelectric coupling.
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Submitted 28 January, 2008; v1 submitted 24 December, 2007;
originally announced December 2007.
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The structural and magnetic properties of (In1-xFex)2O3 (0.0 <= x <= 0.25) system : prepared by gel combustion method
Authors:
O. D. Jayakumar,
I. K. Gopalakrishnan,
S. K. Kulshreshtha,
Amita Gupta,
K. V. Rao,
D. Louzguine,
Akihisa Inoue,
P. Glans,
**ghua Guo,
Kousik Samanta,
M. K. Singh,
R. S. Katiyar
Abstract:
(In1-xFex)2O3 polycrystalline samples with x = (0.0, 0.05, 0.10, 0.15, 0.20 and 0.25) have been synthesized by a gel combustion method. Reitveld refinement analysis of X raydiffraction data indicated the formation of single phase cubic bixbyite structure without any parasitic phases. This observation is further confirmed by high resolution transmission electron microscopy (HRTEM) imaging, and in…
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(In1-xFex)2O3 polycrystalline samples with x = (0.0, 0.05, 0.10, 0.15, 0.20 and 0.25) have been synthesized by a gel combustion method. Reitveld refinement analysis of X raydiffraction data indicated the formation of single phase cubic bixbyite structure without any parasitic phases. This observation is further confirmed by high resolution transmission electron microscopy (HRTEM) imaging, and indexing of the selected-area electron diffraction (SAED) patterns, X-ray Absorption Spectroscopy (XAS) and Raman Spectroscopy. DC Magnetization studies as a function of temperature and field indicatethat they are ferromagnetic with Curie temperature (TC) well above room temperature.
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Submitted 21 June, 2007;
originally announced June 2007.
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First principle study of crystal growth morphology: An application to crystalline urea
Authors:
M. K. Singh
Abstract:
The growth morphology and the effects of surface reconstruction/relaxation of the habit faces on the crystal morphology of urea crystal are investigated from first principle using the Hartman-Perdok approach. A procedure has been developed to find out surface termination when a slab of d(hkl) thickness is created having {hkl} orientation. Slice energy of different habit faces have been computed…
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The growth morphology and the effects of surface reconstruction/relaxation of the habit faces on the crystal morphology of urea crystal are investigated from first principle using the Hartman-Perdok approach. A procedure has been developed to find out surface termination when a slab of d(hkl) thickness is created having {hkl} orientation. Slice energy of different habit faces have been computed and the attachment energy was calculated. The crystal growth morphology of the urea crystal has been drawn on the basis of computed attachment energies of different habit faces. The calculated crystal growth morphology depends on the functional employed for computing the attachment energies. The relaxed morphology obtained on the basis of attachment energy using Hartree-Fock method and B3PW density functional theory give a fairly good agreement with the as grown morphology from vapour phase while morphology computed using B3LYP functional underestimated {111}facet and predicted the appearances of {101} face. Polar solvent effects on the growth morphology were discussed particularly in the context of different atomic environments of {111} and {-1-1-1} faces.
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Submitted 16 February, 2006; v1 submitted 16 February, 2006;
originally announced February 2006.