Showing 1–28 of 28 results for author: Simmons, S

Quantitatively Connecting Experimental Time-Temperature-Superposition-Breakdown of Polymers near the Glass Transition to Dynamic Heterogeneity via the Heterogeneous Rouse Model

Authors: Pei**g Yue, David S. Simmons

Abstract: Polymers near the glass transition temperature Tg often exhibit a breakdown of time-temperature-superposition (TTS), with chain relaxation times and viscosity exhibiting a weaker temperature dependence than segmental relaxation times. The origin of this onset of thermorheological complexity has remained unsettled and a matter of debate. Here we extend the Heterogeneous Rouse Model (HRM), which gen… ▽ More Polymers near the glass transition temperature Tg often exhibit a breakdown of time-temperature-superposition (TTS), with chain relaxation times and viscosity exhibiting a weaker temperature dependence than segmental relaxation times. The origin of this onset of thermorheological complexity has remained unsettled and a matter of debate. Here we extend the Heterogeneous Rouse Model (HRM), which generalizes the Rouse model to account for dynamic heterogeneity, to make predictions for the relaxation modulus G(t) and complex modulus G*($ω$) of unentangled polymers near Tg. The HRM predicts that G(t) and G*($ω$) exhibit enhanced effective scaling exponents in the Rouse regime in the presence of dynamic heterogeneity, with a more rapid decay from the glassy plateau emerging as the system becomes more dynamically heterogeneous on cooling. This behavior is predicted to emerge from a strand-length dependence of the moment of the segmental mobility distribution probed by chain dynamics. We show that the HRM predictions are in good accord with experimental complex modulus data for polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine). The HRM also predicts the onset of distinct temperature dependences among chain scale quantities such as terminal relaxation time and viscosity in our experimental systems, apparently resolving one of the most significant standing objections to a heterogeneity-based origin of TTS-breakdown. The HRM thus provides a generalized theory of the chain-scale linear rheological response of unentangled polymers near Tg, accounting for the origin of TTS-breakdown at a molecular mechanistic level. It also points towards a new strategy of inferring the dynamic heterogeneity of glass-forming polymeric systems based on the temperature-evolution of modified scaling in the Rouse regime. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Mixed equilibrium/nonequilibrium effects govern surface mobility in polymer glasses

Authors: Jianquan Xu, Asieh Ghanekarade, Li Li, Huifeng Zhu, Hailin Yuan, **song Yan, David S. Simmons, Ophelia K. C. Tsui, ** Wang

Abstract: The temperature at which supercooled liquids turn into solid-like glasses ($T_g$) can change at the free surface, affecting the properties of nanostructured glasses and their applications. However, inadequate experimental resolution to determine the $T_g$ gradient and a longstanding debate over the role of nonequilibrium effects have hindered fundamental understanding of this phenomenon. Using spa… ▽ More The temperature at which supercooled liquids turn into solid-like glasses ($T_g$) can change at the free surface, affecting the properties of nanostructured glasses and their applications. However, inadequate experimental resolution to determine the $T_g$ gradient and a longstanding debate over the role of nonequilibrium effects have hindered fundamental understanding of this phenomenon. Using spatially resolved $T_g$ measurements and molecular dynamics simulations, we reveal a crossover from equilibrium behavior to a new regime of near-surface nonequilibrium glass physics on cooling. This crossover causes the form of the nonequilibrium $T_g$ gradient to change, highlighting the need to include these physics for rational understanding of the properties of realistic nanostructured glass-forming materials. They also potentially recast the interpretation of decades of experimental data on nanoconfined glasses. △ Less

Submitted 10 February, 2024; originally announced February 2024.

Comments: This PDF file includes two documents: The first is the main manuscript, which consists of 13 pages and 4 figures. The second document is the supplementary materials, which contains 25 pages, 8 figures, and 3 tables

Central role of filler-polymer interplay in nonlinear reinforcement of elastomeric nanocomposites

Authors: Pierre Kawak, Harshad Bhapkar, David S. Simmons

Abstract: Nanoparticles can greatly enhance the mechanical response of elastomeric polymers essential to a wide range of applications, yet their precise molecular mechanisms of high-strain reinforcement remain largely unresolved. Here we show, based on molecular dynamics simulations, that high-strain reinforcement emerges from an interplay between granular nanoparticulate compressive behavior in the normal… ▽ More Nanoparticles can greatly enhance the mechanical response of elastomeric polymers essential to a wide range of applications, yet their precise molecular mechanisms of high-strain reinforcement remain largely unresolved. Here we show, based on molecular dynamics simulations, that high-strain reinforcement emerges from an interplay between granular nanoparticulate compressive behavior in the normal direction and polymer incompressibility. This feedback loop, which is initiated by a mismatch in the Poisson ratios of nanofiller and polymer, invokes a contribution from the polymer's bulk modulus to the elongational stress, while the tendency of the polymer to contract in the normal direction maintains a near-jammed filler state. This effect persists even once the direct filler elongational contribution becomes dissipative after the 'Payne effect' yield. These results indicate that direct particle-particle contact effects, even in the absence of potential augmenting mechanisms such as glassy polymer bridges, can drive the mechanical reinforcement effects typical of experimental systems. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Fate of the "vacuum point'' and of grey solitons in dispersive quantum shock waves in a one-dimensional Bose gas

Authors: S. A. Simmons, J. C. Pillay, K. V. Kheruntsyan

Abstract: We continue the study of dispersive quantum shock waves in a one-dimensional Bose gas beyond the mean-field approximation. In a recent work by Simmons et al. [Phys. Rev. Let. 125, 180401 (2020)], the oscillatory shock wave train develo** in this system from an initial localized density bump on a uniform background was interpreted as a result of quantum mechanical self-interference, wherein the i… ▽ More We continue the study of dispersive quantum shock waves in a one-dimensional Bose gas beyond the mean-field approximation. In a recent work by Simmons et al. [Phys. Rev. Let. 125, 180401 (2020)], the oscillatory shock wave train develo** in this system from an initial localized density bump on a uniform background was interpreted as a result of quantum mechanical self-interference, wherein the interference contrast would diminish with the loss of matter-wave phase coherence. Such loss of coherence, relative to the mean-field Gross-Pitaevskii description, occurs due to either quantum or thermal fluctuations, as well as in the strongly interacting regime. In this work, we extend the analysis of dispersive quantum shock waves in this context to other dynamical scenarios. More specifically, the scenarios studied include evolution of a sufficiently high density bump, known to lead to the so-called ``vacuum point'' in the mean-field description, and evolution of an initial density dip, known to shed a train of grey solitons in the same mean-field approximation. We study the fate of these nonlinear wave structures in the presence of quantum and thermal fluctuations, as well as at intermediate and strong interactions, and show that both the vacuum point and grey solitons cease to manifest themselves beyond the mean-field approach. On the other hand, we find that a vacuum point can occur in an ideal (noninteracting) Bose gas evolving from a ground state of a localized dimple potential. Due to the ubiquity of dispersive shock waves in nature, our results should provide useful insights and perspectives for a variety of other physical systems known to display nonlinear wave phenomena. △ Less

Submitted 26 July, 2023; v1 submitted 28 May, 2023; originally announced May 2023.

Comments: 20 pages, 10 figures

Journal ref: Phys. Rev. A 108, 013317 (2023)

Is the Molecular Weight Dependence of the Glass Transition Temperature Caused by a Chain End Effect?

Authors: William F. Drayer, David S. Simmons

Abstract: The immense dependence of the glass transition temperature $T_g$ on molecular weight $M$ is one of the most fundamentally and practically important features of polymer glass formation. Here, we report on molecular dynamics simulation of three model linear polymers of substantially different complexity demonstrating that the 70-year-old canonical explanation of this dependence (a simple chain end d… ▽ More The immense dependence of the glass transition temperature $T_g$ on molecular weight $M$ is one of the most fundamentally and practically important features of polymer glass formation. Here, we report on molecular dynamics simulation of three model linear polymers of substantially different complexity demonstrating that the 70-year-old canonical explanation of this dependence (a simple chain end dilution effect) is likely incorrect at leading order. Our data shows that end effects are present only in relatively stiff polymers and, furthermore, that the magnitude of this end effect diminishes on cooling. Instead, we find that $T_g(M)$ trends are instead dominated by shifts in $T_g$ throughout the entire polymer chain rather than through a chain end effect. We show that these data are consistent with a generic two-barrier model of $T_g$ and its $M$-dependence, motivated by the Elastically Collective Nonlinear Langevin Equation (ECNLE) theory. More broadly, this work indicates both a need to reassess the canonical understanding of $T_g(M)$ in linear polymers (and macromolecules at large) and an opportunity to reveal new glass formation physics with renewed study of $M$ effects on $T_g$. △ Less

Submitted 5 February, 2024; v1 submitted 27 March, 2023; originally announced March 2023.

Comments: Discussion expanded with some SI content brought into main manuscript

Benchmarks of Generalized Hydrodynamics for 1D Bose Gases

Authors: R. S. Watson, S. A. Simmons, K. V. Kheruntsyan

Abstract: Generalized hydrodynamics (GHD) is a recent theoretical approach that is becoming a go-to tool for characterizing out-of-equilibrium phenomena in integrable and near-integrable quantum many-body systems. Here, we benchmark its performance against an array of alternative theoretical methods, for an interacting one-dimensional Bose gas described by the Lieb-Liniger model. In particular, we study the… ▽ More Generalized hydrodynamics (GHD) is a recent theoretical approach that is becoming a go-to tool for characterizing out-of-equilibrium phenomena in integrable and near-integrable quantum many-body systems. Here, we benchmark its performance against an array of alternative theoretical methods, for an interacting one-dimensional Bose gas described by the Lieb-Liniger model. In particular, we study the evolution of both a localized density bump and dip, along with a quantum Newton's cradle setup, for various interaction strengths and initial equilibrium temperatures. We find that GHD generally performs very well at sufficiently high temperatures or strong interactions. For low temperatures and weak interactions, we highlight situations where GHD, while not capturing interference phenomena on short lengthscales, can describe a coarse-grained behaviour based on convolution averaging that mimics finite imaging resolution in ultracold atom experiments. In a quantum Newton's cradle setup based on a double-well to single-well trap quench, we find that GHD with diffusive corrections demonstrates excellent agreement with the predictions of a classical field approach. △ Less

Submitted 13 April, 2023; v1 submitted 13 August, 2022; originally announced August 2022.

Comments: 8 pages, 4 figures, plus 6 pages of Supplemental Material

Journal ref: Phys. Rev. Research 5, L022024 (2023)

Phase-space stochastic quantum hydrodynamics for interacting Bose gases

Authors: S. A. Simmons, J. C. Pillay, K. V. Kheruntsyan

Abstract: Hydrodynamic theories offer successful approaches that are capable of simulating the otherwise difficult-to-compute dynamics of quantum many-body systems. In this work we derive, within the positive-P phase-space formalism, a new stochastic hydrodynamic method for the description of interacting Bose gases. It goes beyond existing hydrodynamic approaches, such as superfluid hydrodynamics or general… ▽ More Hydrodynamic theories offer successful approaches that are capable of simulating the otherwise difficult-to-compute dynamics of quantum many-body systems. In this work we derive, within the positive-P phase-space formalism, a new stochastic hydrodynamic method for the description of interacting Bose gases. It goes beyond existing hydrodynamic approaches, such as superfluid hydrodynamics or generalized hydrodynamics, in its capacity to simulate the full quantum dynamics of these systems: it possesses the ability to compute non-equilibrium quantum correlations, even for short-wavelength phenomena. Using this description, we derive a linearized stochastic hydrodynamic scheme which is able to simulate such non-equilibrium situations for longer times than the full positive-P approach, at the expense of approximating the treatment of quantum fluctuations, and show that this linearized scheme can be directly connected with existing Bogoliubov approaches. Furthermore, we go on to demonstrate the usefulness and advantages of this formalism by exploring the correlations that arise in a quantum shock wave scenario and comparing its predictions to other established quantum many-body approaches. △ Less

Submitted 20 October, 2022; v1 submitted 21 February, 2022; originally announced February 2022.

Comments: 23 pages, 16 figures

Journal ref: Phys. Rev. A 106, 043309 (2022)

The microscopic origins of stretched exponential relaxation in two model glass-forming liquids as probed by simulations in the isoconfigurational ensemble

Authors: Daniel Diaz Vela, David S. Simmons

Abstract: The origin of stretched exponential relaxation in supercooled glass-forming liquids is one of the central questions regarding the anomalous dynamics of these fluids. The dominant explanation for this phenomenon has long been the proposition that spatial averaging over a heterogeneous distribution of locally exponential relaxation processes leads to stretching. Here we perform simulations of model… ▽ More The origin of stretched exponential relaxation in supercooled glass-forming liquids is one of the central questions regarding the anomalous dynamics of these fluids. The dominant explanation for this phenomenon has long been the proposition that spatial averaging over a heterogeneous distribution of locally exponential relaxation processes leads to stretching. Here we perform simulations of model polymeric and small-molecule glass-formers in the isoconfigurational ensemble to show that stretching instead emerges from a combination of spatial averaging and locally nonexponential relaxation. Results indicate that localities in the fluid exhibiting faster-than-average relaxation tend to exhibit locally stretched relaxation, whereas slower-than-average relaxing domains exhibit compressed exponential relaxation. We show that local stretching is predicted by loose local caging, as measured by the Debye-Waller factor, and vice versa. This phenomenology in the local relaxation of in-equilibrium glasses parallels the dynamics of out of equilibrium under-dense and over-dense glasses, which likewise exhibit an asymmetry in their degree of stretching vs compression. On the basis of these results, we hypothesize that local stretching and compression in equilibrium glass-forming liquids results from evolution of particle mobilities over a single local relaxation time, with slower particles tending towards acceleration and vice versa. In addition to providing new insight into the origins of stretched relaxation, these results have implications for the interpretation of stretching exponents as measured via metrologies such as dielectric spectroscopy: measured stretching exponents cannot universally be interpreted as a direct measure of the breadth of an underlying distribution of relaxation times. △ Less

Submitted 1 November, 2020; originally announced November 2020.

Comments: 11 pages, 12 figures. This article has been submitted to the Journal of Chemical Physics. After it is published, it will be found at https://aip.scitation.org/journal/jcp

What is a quantum shock wave?

Authors: S. A. Simmons, F. A. Bayocboc, Jr., J. C. Pillay, D. Colas, I. P. McCulloch, K. V. Kheruntsyan

Abstract: Shock waves are examples of the far-from-equilibrium behaviour of matter; they are ubiquitous in nature, yet the underlying microscopic mechanisms behind their formation are not well understood. Here, we study the dynamics of dispersive quantum shock waves in a one-dimensional Bose gas, and show that the oscillatory train forming from a local density bump expanding into a uniform background is a r… ▽ More Shock waves are examples of the far-from-equilibrium behaviour of matter; they are ubiquitous in nature, yet the underlying microscopic mechanisms behind their formation are not well understood. Here, we study the dynamics of dispersive quantum shock waves in a one-dimensional Bose gas, and show that the oscillatory train forming from a local density bump expanding into a uniform background is a result of quantum mechanical self-interference. The amplitude of oscillations, i.e., the interference contrast, decreases with the increase of both the temperature of the gas and the interaction strength due to the reduced phase coherence length. Furthermore, we show that vacuum and thermal fluctuations can significantly wash out the interference contrast, seen in the mean-field approaches, due to shot-to-shot fluctuations in the position of interference fringes around the mean. △ Less

Submitted 3 November, 2020; v1 submitted 27 June, 2020; originally announced June 2020.

Comments: Final published version, 6 pages, 3 figures, plus Supplementary Material

Journal ref: Phys. Rev. Lett. 125, 180401 (2020)

Characterization of the T center in $^{28}$Si

Authors: L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. Simmons

Abstract: Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, altho… ▽ More Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, although very few of these are known to be in the highly desirable telecommunications bands, and those that do often do not couple strongly to light. Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in $^{28}$Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. The T center is thus a promising contender for the hybridization of silicon's two leading quantum technology platforms. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 13 pages, 10 figures

A silicon-integrated telecom photon-spin interface

Authors: L. Bergeron, C. Chartrand, A. T. K. Kurkjian, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. Simmons

Abstract: Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon d… ▽ More Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Journal ref: PRX Quantum 1, 020301 (2020)

Finite-temperature dynamics of a Tonks-Girardeau gas in a frequency-modulated harmonic trap

Authors: Y. Y. Atas, S. A. Simmons, K. V. Kheruntsyan

Abstract: We study the out-of-equilibrium dynamics of a finite-temperature harmonically trapped Tonks-Girardeau gas induced by periodic modulation of the trap frequency. We give explicit exact solutions for the real-space density and momentum distributions of this interacting many-body system and characterize the stability diagram of the dynamics by map** the many-body solution to the solution and stabili… ▽ More We study the out-of-equilibrium dynamics of a finite-temperature harmonically trapped Tonks-Girardeau gas induced by periodic modulation of the trap frequency. We give explicit exact solutions for the real-space density and momentum distributions of this interacting many-body system and characterize the stability diagram of the dynamics by map** the many-body solution to the solution and stability diagram of Mathieu's differential equation. The map** allows one to deduce the exact structure of parametric resonances in the parameter space characterized by the driving amplitude and frequency of the modulation. Furthermore, we analyze the same problem within the finite-temperature hydrodynamic approach and show that the respective solutions to the hydrodynamic equations can be mapped to the same Mathieu equation. Accordingly, the stability diagram and the structure of resonances following from the hydrodynamic approach is exactly the same as those obtained from the exact many-body solution. △ Less

Submitted 4 August, 2019; originally announced August 2019.

Comments: 15 pages, 8 figures

Journal ref: Phys. Rev. A 100, 043602 (2019)

A Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in $^{28}$Si

Authors: Rohan Abraham, Adam DeAbreu, Kevin Morse, Valentina Shuman, Leonid Portsel, Anatoly Lodygin, Yuri Astrov, Nikolay Abrosimov, Sergey Pavlov, Heinz-Wilhelm Hübers, Stephanie Simmons, Michael Thewalt

Abstract: We use the greatly improved optical linewidths provided by highly enriched $^{28}$Si to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg, and suggested to result from the recombination of an isoelectronic bound exciton localized at a Mg-pair center. In $^{28}$Si this no-phonon line is found to be comprised of five componen… ▽ More We use the greatly improved optical linewidths provided by highly enriched $^{28}$Si to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg, and suggested to result from the recombination of an isoelectronic bound exciton localized at a Mg-pair center. In $^{28}$Si this no-phonon line is found to be comprised of five components whose relative intensities closely match the relative abundances of Mg-pairs formed by random combinations of the three stable isotopes of Mg, thus confirming the Mg-pair hypothesis. We further present the results of temperature dependence studies of this center that reveal unusual and as yet unexplained behaviour. △ Less

Submitted 28 September, 2018; originally announced October 2018.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 98, 205203 (2018)

Further investigations of the deep double donor magnesium in silicon

Authors: Rohan Abraham, Adam DeAbreu, Kevin Morse, Valentina Shuman, Leonid Portsel, Anatoly Lodygin, Yuri Astrov, Nikolay Abrosimov, Sergey Pavlov, Heinz-Wilhelm Hübers, Stephanie Simmons, Michael Thewalt

Abstract: The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical properties which may enable a spin/photonic quantum technology. The interstitial magnesium impurity (Mg$_i$) in silicon is also a deep double donor but has not yet been studied in the same detail as have the chalcogens. In this study we look at the neutral and singly ionized Mg$_i$ absorption spectra… ▽ More The deep double donor levels of substitutional chalcogen impurities in silicon have unique optical properties which may enable a spin/photonic quantum technology. The interstitial magnesium impurity (Mg$_i$) in silicon is also a deep double donor but has not yet been studied in the same detail as have the chalcogens. In this study we look at the neutral and singly ionized Mg$_i$ absorption spectra in natural silicon and isotopically enriched 28-silicon in more detail. The 1s(A$_1$) to 1s(T$_2$) transitions, which are very strong for the chalcogens and are central to the proposed spin/photonic quantum technology, could not be detected. We observe the presence of another double donor (Mg$_{i*}$) that may result from Mg$_i$ in a reduced symmetry configuration, most likely due to complexing with another impurity. The neutral species of Mg$_{i*}$ reveal unusual low lying ground state levels detected through temperature dependence studies. We also observe a shallow donor which we identify as a magnesium-boron pair. △ Less

Submitted 10 September, 2018; v1 submitted 5 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. B 98, 045202 (2018)

Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits

Authors: J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, D. N. Jamieson, J. C. McCallum, K. M. Itoh, A. S. Dzurak, A. Morello

Abstract: The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be… ▽ More The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 6 pages main text + 3 pages supplementary

Journal ref: Phys. Rev. B 98, 155201 (2018)

A single-atom quantum memory in silicon

Authors: S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Morello

Abstract: Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex… ▽ More Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. △ Less

Submitted 5 September, 2016; v1 submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

A photonic platform for donor spin qubits in silicon

Authors: Kevin J. Morse, Rohan J. S. Abraham, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L. W. Thewalt, Stephanie Simmons

Abstract: Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fideli… ▽ More Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fidelities near $\sim\!99.9\%$. These properties meet the requirements for many modern quantum error correction protocols, which are essential for constructing large-scale universal quantum technologies. However, a method of reliably coupling spatially-separated qubits, which crucially does not sacrifice qubit quality and is robust to manufacturing imperfections, has yet to be identified. Here we present such a platform for donor qubits in silicon, by exploiting optically-accessible `deep' chalcogen donors. We show that these donors emit highly uniform light, can be optically initialized, and offer long-lived spin qubit ground states without requiring milliKelvin temperatures. These combined properties make chalcogen donors uniquely suitable for incorporation into silicon photonic architectures for single-shot single-qubit readout as well as for multi-qubit coupling. This unlocks clear pathways for silicon-based quantum computing, spin to photon conversion, photonic memories, silicon-integrated triggered single photon sources and all-optical silicon switches. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Comments: 7 pages, 4 figures

Optimization of a solid-state electron spin qubit using Gate Set Tomography

Authors: Juan P. Dehollain, Juha T. Muhonen, Robin Blume-Kohout, Kenneth M. Rudinger, John King Gamble, Erik Nielsen, Arne Laucht, Stephanie Simmons, Rachpon Kalra, Andrew S. Dzurak, Andrea Morello

Abstract: State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography… ▽ More State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme. △ Less

Submitted 16 June, 2016; v1 submitted 9 June, 2016; originally announced June 2016.

Comments: 14 pages, 4 figures. v2: Updated references and included ancillary files

Journal ref: New Journal of Physics 18, 103018 (2016)

Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin

Authors: Arne Laucht, Stephanie Simmons, Rachpon Kalra, Guilherme Tosi, Juan P. Dehollain, Juha T. Muhonen, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency… ▽ More We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data. △ Less

Submitted 1 September, 2016; v1 submitted 7 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 161302 (2016)

A Dressed Spin Qubit in Silicon

Authors: Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp… ▽ More Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence

Authors: Rachpon Kalra, Arne Laucht, Juan P. Dehollain, Daniel Bar, Solomon Freer, Stephanie Simmons, Juha T. Muhonen, Andrea Morello

Abstract: Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to th… ▽ More Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5 to 10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube. △ Less

Submitted 7 July, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Comments: 13 pages, 10 figures

Journal ref: Review of Scientific Instruments 87, 073905 (2016)

$^{29}$Si nuclear spins as a resource for donor spin qubits in silicon

Authors: Gary Wolfowicz, Pierre-Andre Mortemousque, Roland Guichard, Stephanie Simmons, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton

Abstract: Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin… ▽ More Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby $^{29}$Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale - over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction, including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round quantum error correction using donors in silicon. △ Less

Submitted 8 May, 2015; originally announced May 2015.

Comments: 6 pages, 4 figures

Bell's inequality violation with spins in silicon

Authors: Juan P. Dehollain, Stephanie Simmons, Juha T. Muhonen, Rachpon Kalra, Arne Laucht, Fay Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagge… ▽ More Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by map** the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime. △ Less

Submitted 13 April, 2015; originally announced April 2015.

Comments: 10 pages, 3 figures, 1 table, 4 extended data figures

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Authors: Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie… ▽ More Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. △ Less

Submitted 1 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

A Two Qubit Logic Gate in Silicon

Authors: M. Veldhorst, C. H. Yang, J. C. C. Hwang, W. Huang, J. P. Dehollain, J. T. Muhonen, S. Simmons, A. Laucht, F. E. Hudson, K. M. Itoh, A. Morello, A. S. Dzurak

Abstract: Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok200… ▽ More Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation. △ Less

Submitted 20 November, 2014; originally announced November 2014.

Journal ref: Full details, including two-qubit readout after CNOT operation, are in the published version: Nature 526, 410-414 (2015)

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Authors: J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

Abstract: Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p… ▽ More Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Journal ref: J. Phys.: Condens. Matter 27 (2015) 154205

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Authors: C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton

Abstract: We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large an… ▽ More We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. △ Less

Submitted 27 January, 2014; originally announced January 2014.

Comments: 5 pages, 3 figures

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si

Authors: Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin cohere… ▽ More Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of 29Si impurities. Here we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths, transition probabilities and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and mI of the 209Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X-band, comparable with 28Si:P. The coherence times we measure follow closely the calculated field-sensitivity of the transition frequency, providing a strong motivation to explore 'clock' transitions where coherence lifetimes could be further enhanced. △ Less

Submitted 13 September, 2012; v1 submitted 16 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 figures