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Inversion and Tunability of Van Hove Singularities in $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs) kagome metals
Authors:
Sangjun Sim,
Min Yong Jeong,
Hyunggeun Lee,
Dong Hyun David Lee,
Myung Joon Han
Abstract:
To understand the alkali-metal-dependent material properties of recently discovered $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs), we conducted a detailed electronic structure analysis based on first-principles density functional theory calculations. Contrary to the case of $A$ = K and Rb, the energetic positions of the low-lying Van Hove singularities are reversed in CsV$_{3}$Sb$_{5}$, and the charact…
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To understand the alkali-metal-dependent material properties of recently discovered $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs), we conducted a detailed electronic structure analysis based on first-principles density functional theory calculations. Contrary to the case of $A$ = K and Rb, the energetic positions of the low-lying Van Hove singularities are reversed in CsV$_{3}$Sb$_{5}$, and the characteristic higher-order Van Hove point gets closer to the Fermi level. We found that this notable difference can be attributed to the chemical effect, apart from structural differences. Due to their different orbital compositions, Van Hove points show qualitatively different responses to the structure changes. A previously unnoticed highest lying point can be lowered, locating close to or even below the other ones in response to a reasonable range of bi- and uni-axial strain. Our results can be useful in better understanding the material-dependent features reported in this family and in realizing experimental control of exotic quantum phases.
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Submitted 1 April, 2024;
originally announced April 2024.
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Fault-tolerant quantum algorithm for symmetry-adapted perturbation theory
Authors:
Cristian L. Cortes,
Matthias Loipersberger,
Robert M. Parrish,
Sam Morley-Short,
William Pol,
Sukin Sim,
Mark Steudtner,
Christofer S. Tautermann,
Matthias Degroote,
Nikolaj Moll,
Raffaele Santagati,
Michael Streif
Abstract:
The efficient computation of observables beyond the total energy is a key challenge and opportunity for fault-tolerant quantum computing approaches in quantum chemistry. Here we consider the symmetry-adapted perturbation theory (SAPT) components of the interaction energy as a prototypical example of such an observable. We provide a guide for calculating this observable on a fault-tolerant quantum…
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The efficient computation of observables beyond the total energy is a key challenge and opportunity for fault-tolerant quantum computing approaches in quantum chemistry. Here we consider the symmetry-adapted perturbation theory (SAPT) components of the interaction energy as a prototypical example of such an observable. We provide a guide for calculating this observable on a fault-tolerant quantum computer while optimizing the required computational resources. Specifically, we present a quantum algorithm that estimates interaction energies at the first-order SAPT level with a Heisenberg-limited scaling. To this end, we exploit a high-order tensor factorization and block encoding technique that efficiently represents each SAPT observable. To quantify the computational cost of our methodology, we provide resource estimates in terms of the required number of logical qubits and Toffoli gates to execute our algorithm for a range of benchmark molecules, also taking into account the cost of the eigenstate preparation and the cost of block encoding the SAPT observables. Finally, we perform the resource estimation for a heme and artemisinin complex as a representative large-scale system encountered in drug design, highlighting our algorithm's performance in this new benchmark study and discussing possible bottlenecks that may be improved in future work.
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Submitted 15 May, 2023; v1 submitted 11 May, 2023;
originally announced May 2023.
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Wigner-molecularization-enabled dynamic nuclear field programming
Authors:
Won** Jang,
Jehyun Kim,
Jaemin Park,
Gyeonghun Kim,
Min-Kyun Cho,
Hyeongyu Jang,
Sangwoo Sim,
Byoungwoo Kang,
Hwanchul Jung,
Vladimir Umansky,
Dohun Kim
Abstract:
Multielectron semiconductor quantum dots (QDs) provide a novel platform to study the role of Coulomb correlations in finite quantum systems and their impact on many-body energy spectra. An example is the formation of interaction-driven, spatially localized electron states of Wigner molecules (WMs). Although Wigner molecularization has been confirmed by real-space imaging and coherent spectroscopy,…
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Multielectron semiconductor quantum dots (QDs) provide a novel platform to study the role of Coulomb correlations in finite quantum systems and their impact on many-body energy spectra. An example is the formation of interaction-driven, spatially localized electron states of Wigner molecules (WMs). Although Wigner molecularization has been confirmed by real-space imaging and coherent spectroscopy, the open system dynamics of the strongly-correlated states with the environment are not yet well understood. Here, we demonstrate efficient control of spin transfer between an artificial three-electron WM and the nuclear environment in a GaAs double QD. A Landau-Zener sweep-based polarization sequence and low-lying anti-crossings of spin multiplet states enabled by Wigner molecularization are utilized. An efficient polarization rate of 2.58 $h \cdotp kHz \cdotp (g^* \cdotp μ_B)^{-1}$ per electron spin flip and, consequently, programmable nuclear polarization by controlled single-electron tunneling are achieved. Combined with coherent control of spin states, we achieve control of magnitude, polarity, and site dependence of the nuclear field. It is demonstrated that the same level of control cannot be achieved in the non-interacting regime. Thus, we confirm the multiplet spin structure of a WM, paving the way for active control of newly emerging correlated electron states for application in mesoscopic environment engineering.
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Submitted 24 July, 2022;
originally announced July 2022.
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Slow oxidation of magnetite nanoparticles elucidates the limits of the Verwey transition
Authors:
Taehun Kim,
Sangwoo Sim,
Sumin Lim,
Midori Amano Patino,
Jaeyoung Hong,
Jisoo Lee,
Taeghwan Hyeon,
Yuichi Shimakawa,
Soonchil Lee,
J. Paul Attfield,
Je-Geun Park
Abstract:
Magnetite (Fe3O4) is of fundamental importance as the original magnetic material and also for the Verwey transition near T_V = 125 K, below which a complex lattice distortion and electron orders occur. The Verwey transition is suppressed by strain or chemical do** effects giving rise to well-documented first and second-order regimes, but the origin of the order change is unclear. Here, we show t…
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Magnetite (Fe3O4) is of fundamental importance as the original magnetic material and also for the Verwey transition near T_V = 125 K, below which a complex lattice distortion and electron orders occur. The Verwey transition is suppressed by strain or chemical do** effects giving rise to well-documented first and second-order regimes, but the origin of the order change is unclear. Here, we show that slow oxidation of monodisperse Fe3O4 nanoparticles leads to an intriguing variation of the Verwey transition that elucidates the do** effects. Exposure to various fixed oxygen pressures at ambient temperature leads to an initial drop to TV minima as low as 70 K after 45-75 days, followed by recovery to a constant value of 95 K after 160 days that persists in all experiments for aging times up to 1070 days. A physical model based on both do** and do**-gradient effects accounts quantitatively for this evolution and demonstrates that the persistent 95 K value corresponds to the lower limit for homogenously doped magnetite and hence for the first order regime. In comparison, further suppression down to 70 K results from inhomogeneous strains that characterize the second-order region. This work demonstrates that slow reactions of nanoparticles can give exquisite control and separation of homogenous and inhomogeneous do** or strain effects on an nm scale and offers opportunities for similar insights into complex electronic and magnetic phase transitions in other materials.
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Submitted 5 October, 2021;
originally announced October 2021.
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Noisy intermediate-scale quantum (NISQ) algorithms
Authors:
Kishor Bharti,
Alba Cervera-Lierta,
Thi Ha Kyaw,
Tobias Haug,
Sumner Alperin-Lea,
Abhinav Anand,
Matthias Degroote,
Hermanni Heimonen,
Jakob S. Kottmann,
Tim Menke,
Wai-Keong Mok,
Sukin Sim,
Leong-Chuan Kwek,
Alán Aspuru-Guzik
Abstract:
A universal fault-tolerant quantum computer that can solve efficiently problems such as integer factorization and unstructured database search requires millions of qubits with low error rates and long coherence times. While the experimental advancement towards realizing such devices will potentially take decades of research, noisy intermediate-scale quantum (NISQ) computers already exist. These co…
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A universal fault-tolerant quantum computer that can solve efficiently problems such as integer factorization and unstructured database search requires millions of qubits with low error rates and long coherence times. While the experimental advancement towards realizing such devices will potentially take decades of research, noisy intermediate-scale quantum (NISQ) computers already exist. These computers are composed of hundreds of noisy qubits, i.e. qubits that are not error-corrected, and therefore perform imperfect operations in a limited coherence time. In the search for quantum advantage with these devices, algorithms have been proposed for applications in various disciplines spanning physics, machine learning, quantum chemistry and combinatorial optimization. The goal of such algorithms is to leverage the limited available resources to perform classically challenging tasks. In this review, we provide a thorough summary of NISQ computational paradigms and algorithms. We discuss the key structure of these algorithms, their limitations, and advantages. We additionally provide a comprehensive overview of various benchmarking and software tools useful for programming and testing NISQ devices.
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Submitted 6 October, 2021; v1 submitted 21 January, 2021;
originally announced January 2021.
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Sizeable suppression of thermal Hall effect upon isotopic substitution in strontium titanate
Authors:
Sangwoo Sim,
Heejun Yang,
Ha-Leem Kim,
Matthew J Coak,
Mitsuru Itoh,
Yukio Noda,
Je-Geun Park
Abstract:
We report measurements of the thermal Hall effect in single crystals of both pristine and isotopically substituted strontium titanate. We discovered a two orders of magnitude difference in the thermal Hall conductivity between $SrTi^{16}O_3$ and $^{18}O$-enriched $SrTi^{18}O_3$ samples. In most temperature ranges, the magnitude of thermal Hall conductivity ($κ_{xy}$) in $SrTi^{18}O_3$ is proportio…
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We report measurements of the thermal Hall effect in single crystals of both pristine and isotopically substituted strontium titanate. We discovered a two orders of magnitude difference in the thermal Hall conductivity between $SrTi^{16}O_3$ and $^{18}O$-enriched $SrTi^{18}O_3$ samples. In most temperature ranges, the magnitude of thermal Hall conductivity ($κ_{xy}$) in $SrTi^{18}O_3$ is proportional to the magnitude of the longitudinal thermal conductivity ($κ_{xx}$), which suggests a phonon-mediated thermal Hall effect. However, they deviate in the temperature of their maxima, and the thermal Hall angle ratio ($|κ_{xy}/κ_{xx}|$) shows anomalously decreasing behavior below the ferroelectric Curie temperature $T_c$ ~$25 K$. This observation suggests a new underlying mechanism, as the conventional scenario cannot explain such differences within the slight change in phonon spectrum. Notably, the difference in magnitude of thermal Hall conductivity and rapidly decreasing thermal Hall angle ratio in $SrTi^{18}O_3$ is correlated with the strength of quantum critical fluctuations in this displacive ferroelectric. This relation points to a link between the quantum critical physics of strontium titanate and its thermal Hall effect, a possible clue to explain this example of an exotic phenomenon in non-magnetic insulating systems.
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Submitted 10 December, 2020;
originally announced December 2020.
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Kagome van-der-Waals Pd3P2S8 with flat band
Authors:
Seunghyun Park,
Soonmin Kang,
Haeri Kim,
Ki Hoon Lee,
Pilkwang Kim,
Sangwoo Sim,
Nahyun Lee,
Balamurugan Karuppannan,
Junghyun Kim,
Jonghyeon Kim,
Kyung Ik Sim,
Matthew J. Coak,
Yukio Noda,
Cheol-Hwan Park,
Jae Hoon Kim,
Je-Geun Park
Abstract:
With the advanced investigations into low-dimensional systems, it has become essential to find materials having interesting lattices that can be exfoliated down to monolayer. One particular important structure is a kagome lattice with its potentially diverse and vibrant physics. We report a van-der-Waals kagome lattice material, Pd3P2S8, with several unique properties such as an intriguing flat ba…
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With the advanced investigations into low-dimensional systems, it has become essential to find materials having interesting lattices that can be exfoliated down to monolayer. One particular important structure is a kagome lattice with its potentially diverse and vibrant physics. We report a van-der-Waals kagome lattice material, Pd3P2S8, with several unique properties such as an intriguing flat band. The flat band is shown to arise from a possible compact-localized state of all five 4d orbitals of Pd. The diamagnetic susceptibility is precisely measured to support the calculated susceptibility obtained from the band structure. We further demonstrate that Pd3P2S8 can be exfoliated down to monolayer, which ultimately will allow the possible control of the localized states in this two-dimensional kagome lattice using the electric field gating.
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Submitted 18 November, 2020;
originally announced November 2020.
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Quantum computer-aided design: digital quantum simulation of quantum processors
Authors:
Thi Ha Kyaw,
Tim Menke,
Sukin Sim,
Abhinav Anand,
Nicolas P. D. Sawaya,
William D. Oliver,
Gian Giacomo Guerreschi,
Alán Aspuru-Guzik
Abstract:
With the increasing size of quantum processors, sub-modules that constitute the processor hardware will become too large to accurately simulate on a classical computer. Therefore, one would soon have to fabricate and test each new design primitive and parameter choice in time-consuming coordination between design, fabrication, and experimental validation. Here we show how one can design and test t…
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With the increasing size of quantum processors, sub-modules that constitute the processor hardware will become too large to accurately simulate on a classical computer. Therefore, one would soon have to fabricate and test each new design primitive and parameter choice in time-consuming coordination between design, fabrication, and experimental validation. Here we show how one can design and test the performance of next-generation quantum hardware -- by using existing quantum computers. Focusing on superconducting transmon processors as a prominent hardware platform, we compute the static and dynamic properties of individual and coupled transmons. We show how the energy spectra of transmons can be obtained by variational hybrid quantum-classical algorithms that are well-suited for near-term noisy quantum computers. In addition, single- and two-qubit gate simulations are demonstrated via Suzuki-Trotter decomposition. Our methods pave a promising way towards designing candidate quantum processors when the demands of calculating sub-module properties exceed the capabilities of classical computing resources.
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Submitted 13 October, 2021; v1 submitted 4 June, 2020;
originally announced June 2020.
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Exciton dynamics in atomically thin MoS2: inter-excitonic interaction and broadening kinetics
Authors:
Sangwan Sim,
Jusang Park,
Jeong-Gyu Song,
Chihun In,
Yun-Shik Lee,
Hyungjun Kim,
Hyunyong Choi
Abstract:
We report ultrafast pump-probe spectroscopy examining exciton dynamics in atomically thin MoS2. Spectrally- and temporally-resolved measurements are performed to investigate the interaction dynamics of two important direct-gap excitons (A and B) and their associated broadening kinetics. The two excitons show strongly correlated inter-excitonic dynamic, in which the transient blue-shifted excitonic…
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We report ultrafast pump-probe spectroscopy examining exciton dynamics in atomically thin MoS2. Spectrally- and temporally-resolved measurements are performed to investigate the interaction dynamics of two important direct-gap excitons (A and B) and their associated broadening kinetics. The two excitons show strongly correlated inter-excitonic dynamic, in which the transient blue-shifted excitonic absorption originates from the internal A-B excitonic interaction. The observed complex spectral response is determined by the exciton collision-induced linewidth broadening; the broadening of the B exciton linewidth in turn lowers the peak spectral amplitude of the A exciton. Resonant excitation at the B exciton energy reveals that inter-excitonic scattering plays a more important role in determining the broadening kinetics than free-carrier scattering.
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Submitted 8 August, 2013;
originally announced August 2013.
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Wafer-scale synthesis and transfer of graphene films
Authors:
Youngbin Lee,
Sukang Bae,
Houk Jang,
Sukjae Jang,
Shou-En Zhu,
Sung Hyun Sim,
Young Il Song,
Byung Hee Hong,
Jong-Hyun Ahn
Abstract:
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gaug…
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We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
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Submitted 26 October, 2009;
originally announced October 2009.
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Electron Pair Resonance in the Coulomb Blockade
Authors:
Eran Sela,
H. S. Sim,
Yuval Oreg,
M. E. Raikh,
Felix von Oppen
Abstract:
We study many-body corrections to the cotunneling current via a localized state with energy $ε_d$ at large bias voltages $V$. We show that the transfer of {\em electron pairs}, enabled by the Coulomb repulsion in the localized level, results in ionization resonance peaks in the third derivative of the current with respect to $V$, centered at $eV=\pm 2ε_d/3$. Our results predict the existence of…
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We study many-body corrections to the cotunneling current via a localized state with energy $ε_d$ at large bias voltages $V$. We show that the transfer of {\em electron pairs}, enabled by the Coulomb repulsion in the localized level, results in ionization resonance peaks in the third derivative of the current with respect to $V$, centered at $eV=\pm 2ε_d/3$. Our results predict the existence of previously unnoticed structure within Coulomb-blockade diamonds.
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Submitted 19 July, 2007;
originally announced July 2007.
