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Perspective on Metallic Antiferromagnets
Authors:
Saima A. Siddiqui,
Joseph Sklenar,
Kisung Kang,
Matthew J. Gilbert,
André Schleife,
Nadya Mason,
Axel Hoffmann
Abstract:
Antiferromagnet materials have recently gained renewed interest due to their possible use in spintronics technologies, where spin transport is the foundation of their functionalities. In that respect metallic antiferromagnets are of particular interest, since they enable complex interplays between electronic charge transport, spin, optical, and magnetization dynamics. Here we review phenomena wher…
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Antiferromagnet materials have recently gained renewed interest due to their possible use in spintronics technologies, where spin transport is the foundation of their functionalities. In that respect metallic antiferromagnets are of particular interest, since they enable complex interplays between electronic charge transport, spin, optical, and magnetization dynamics. Here we review phenomena where the metallic conductivity provides unique perspectives for the practical use and fundamental properties of antiferromagnetic materials.
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Submitted 11 May, 2020;
originally announced May 2020.
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Magnetic domain wall based synaptic and activation function generator for neuromorphic accelerators
Authors:
Saima A Siddiqui,
Sumit Dutta,
Astera Tang,
Luqiao Liu,
Caroline A Ross,
Marc A Baldo
Abstract:
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-base…
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Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is < 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.
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Submitted 7 September, 2019;
originally announced September 2019.
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Current-induced domain wall motion in compensated ferrimagnet
Authors:
Saima A Siddiqui,
Jiahao Han,
Joseph T Finley,
Caroline A Ross,
Luqiao Liu
Abstract:
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the curren…
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Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum close to the angular momentum compensation. With experiment and modelling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy metal/ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.
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Submitted 4 June, 2018;
originally announced June 2018.
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360° Domain Walls: Stability, Magnetic Field and Electric Current Effects
Authors:
**shuo Zhang,
Saima A. Siddiqui,
Pin Ho,
Jean Anne Currivan-Incorvia,
Larysa Tryputen,
Enno Lage,
David C. Bono,
Marc A. Baldo,
Caroline A. Ross
Abstract:
The formation of 360° magnetic domain walls (360DWs) in Co and Ni80Fe20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180° domain walls (180DWs) into the wire. For narrow wires (less than 50 nm wide for Co), edge roughness prevented the combination of the 180DWs into a 360DW, and for wide wires (200 nm for Co) the 360DW collapsed, but over…
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The formation of 360° magnetic domain walls (360DWs) in Co and Ni80Fe20 thin film wires was demonstrated experimentally for different wire widths, by successively injecting two 180° domain walls (180DWs) into the wire. For narrow wires (less than 50 nm wide for Co), edge roughness prevented the combination of the 180DWs into a 360DW, and for wide wires (200 nm for Co) the 360DW collapsed, but over an intermediate range of wire widths, reproducible 360DW formation occurred. The annihilation and dissociation of 360DWs was demonstrated by applying a magnetic field parallel to the wire, showing that annihilation fields were several times higher than dissociation fields in agreement with micromagnetic modeling. The annihilation of a 360DW by current pulsing was demonstrated.
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Submitted 31 August, 2015;
originally announced August 2015.