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Universal materials model of deep-learning density functional theory Hamiltonian
Authors:
Yuxiang Wang,
Yang Li,
Zechen Tang,
He Li,
Zilong Yuan,
Honggeng Tao,
Nianlong Zou,
Ting Bao,
Xinghao Liang,
Zezhou Chen,
Shanghua Xu,
Ce Bian,
Zhiming Xu,
Chong Wang,
Chen Si,
Wenhui Duan,
Yong Xu
Abstract:
Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by develo** universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling compu…
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Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by develo** universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling computational modeling of the complicated structure-property relationship of materials in general. By constructing a large materials database and substantially improving the DeepH method, we obtain a universal materials model of DeepH capable of handling diverse elemental compositions and material structures, achieving remarkable accuracy in predicting material properties. We further showcase a promising application of fine-tuning universal materials models for enhancing specific materials models. This work not only demonstrates the concept of DeepH's universal materials model but also lays the groundwork for develo** large materials models, opening up significant opportunities for advancing artificial intelligence-driven materials discovery.
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Submitted 15 June, 2024;
originally announced June 2024.
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Enhancement of Ising superconductivity in monolayer NbSe$_2$ via surface fluorination
Authors:
Jizheng Wu,
Wujun Shi,
Chong Wang,
Wenhui Duan,
Yong Xu,
Chen Si
Abstract:
Recently discovered Ising superconductors have garnered considerable interest due to their anomalously large in-plane upper critical fields ($B_{c2}$). However, the requisite strong spin-orbital coupling in the Ising pairing mechanism generally renders these superconductors heavy-element dominant with notably low superconducting transition temperatures ($T_c$). Here, based on the Migdal-Eliashberg…
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Recently discovered Ising superconductors have garnered considerable interest due to their anomalously large in-plane upper critical fields ($B_{c2}$). However, the requisite strong spin-orbital coupling in the Ising pairing mechanism generally renders these superconductors heavy-element dominant with notably low superconducting transition temperatures ($T_c$). Here, based on the Migdal-Eliashberg theory and the mean-field Bogoliubov-de Gennes Hamiltonian, we demonstrate a significant enhancement of Ising superconductivity in monolayer NbSe$_2$ through surface fluorination, as evidenced by concomitant improvements in $T_c$ and $B_{c2}$. This enhancement arises from three predominant factors. Firstly, fluorine atoms symmetrically and stably adhere to both sides of the monolayer NbSe$_2$, thereby maintaining the out-of-plane mirror symmetry and locking carrier spins out-of-plane. Secondly, fluorination suppresses the charge density wave in monolayer NbSe$_2$ and induces a van Hove singularity in the vicinity of the Fermi level, leading to a marked increase in the number of carriers and, consequently, strengthening the electron-phonon coupling (EPC). Lastly, the appearance of fluorine-related, low-frequency phonon modes further augments the EPC. Our findings suggest a promising avenue to elevate $T_c$ in two-dimensional Ising superconductors without compromising their Ising pairing.
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Submitted 6 January, 2024;
originally announced January 2024.
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Quantifying proximity-induced superconductivity from first-principles calculations
Authors:
Yunhao Li,
Zimeng Zeng,
Jizheng Wu,
Chen Si,
Zheng Liu
Abstract:
Proximity induced superconductivity with a clean interface has attracted much attention in recent years. We discuss how the commonly-employed electron tunneling approximation can be hybridized with first-principles calculation to achieve a quantitative characterization starting from the microscopic atomic structure. By using the graphene-Zn heterostructure as an example, we compare this approximat…
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Proximity induced superconductivity with a clean interface has attracted much attention in recent years. We discuss how the commonly-employed electron tunneling approximation can be hybridized with first-principles calculation to achieve a quantitative characterization starting from the microscopic atomic structure. By using the graphene-Zn heterostructure as an example, we compare this approximated treatment to the full \textit{ab inito} anisotropic Eliashberg formalism. Based on the calculation results, we discuss how superconductivity is affected by the interfacial environment.
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Submitted 30 January, 2023;
originally announced January 2023.
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Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2
Authors:
Wei Wang,
Chen Si,
Wen Lei,
Feng Xiao,
Yunhui Liu,
Carmine Autieri,
Xing Ming
Abstract:
Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, a…
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Based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even though the Coulomb correlation is taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interaction, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacking undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions by altering the stacking order. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interaction in different stacking arrangements.
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Submitted 17 September, 2021;
originally announced September 2021.
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Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
Authors:
Julien Chaste,
Imen Hnid,
Lama Khalil,
Chen Si,
Alan Durnez,
Xavier Lafosse,
Meng-Qiang Zhao,
A. T. Charlie Johnson,
Shengbai Zhang,
Junhyeok Bang,
Abdelkarim Ouerghi
Abstract:
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any e…
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Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.
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Submitted 23 November, 2020;
originally announced November 2020.
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Functionalized Germanene as a Prototype of Large-Gap Two-Dimensional Topological Insulators
Authors:
Chen Si,
Junwei Liu,
Yong Xu,
Jian Wu,
Bing-Lin Gu,
Wenhui Duan
Abstract:
We propose new two-dimensional (2D) topological insulators (TIs) in functionalized germanenes (GeX, X=H, F, Cl, Br or I) using first-principles calculations. We find GeI is a 2D TI with a bulk gap of about 0.3 eV, while GeH, GeF, GeCl and GeBr can be transformed into TIs with sizeable gaps under achievable tensile strains. A unique mechanism is revealed to be responsible for large topologically-no…
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We propose new two-dimensional (2D) topological insulators (TIs) in functionalized germanenes (GeX, X=H, F, Cl, Br or I) using first-principles calculations. We find GeI is a 2D TI with a bulk gap of about 0.3 eV, while GeH, GeF, GeCl and GeBr can be transformed into TIs with sizeable gaps under achievable tensile strains. A unique mechanism is revealed to be responsible for large topologically-nontrivial gap obtained: owing to the functionalization, the $σ$ orbitals with stronger spin-orbit coupling (SOC) dominate the states around the Fermi level, instead of original $π$ orbitals with weaker SOC; thereinto, the coupling of the $p_{xy}$ orbitals of Ge and heavy halogens in forming the $σ$ orbitals also plays a key role in the further enlargement of the gaps in halogenated germanenes. Our results suggest a realistic possibility for the utilization of topological effects at room temperature.
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Submitted 16 January, 2014;
originally announced January 2014.
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Superconducting Graphene: the conspiracy of do** and strain
Authors:
Chen Si,
Zheng Liu,
Wenhui Duan,
Feng Liu
Abstract:
Graphene has exhibited a wealth of fascinating properties, but is also known not to be a superconductor. Remarkably, we show that graphene can be made a conventional Bardeen-Cooper-Schrieffer superconductor by the combined effect of charge do** and tensile strain. While the effect of do** is obvious to enlarge Fermi surface, the effect of strain is profound to greatly increase the electron-pho…
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Graphene has exhibited a wealth of fascinating properties, but is also known not to be a superconductor. Remarkably, we show that graphene can be made a conventional Bardeen-Cooper-Schrieffer superconductor by the combined effect of charge do** and tensile strain. While the effect of do** is obvious to enlarge Fermi surface, the effect of strain is profound to greatly increase the electron-phonon coupling. At the experimental accessible do** (4E+14cm-2) and strain (~16%) levels, the superconducting critical temperature Tc reaches as high as ~30 K, the highest for a single-element material above the liquid hydrogen temperature. This significantly makes graphene a commercially viable superconductor.
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Submitted 12 August, 2013;
originally announced August 2013.
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Electronic Strengthening of Graphene by Charge Do**
Authors:
Chen Si,
Wenhui Duan,
Zheng Liu,
Feng Liu
Abstract:
Graphene is known as the strongest 2D material in nature, yet we show that moderate charge do** of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual electronic enhancement, versus conventional structural enhancement, of material's strength is achieved by an intriguing physical mechanism of charge do** counteract…
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Graphene is known as the strongest 2D material in nature, yet we show that moderate charge do** of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual electronic enhancement, versus conventional structural enhancement, of material's strength is achieved by an intriguing physical mechanism of charge do** counteracting on strain induced enhancement of Kohn anomaly, which leads to an overall stiffening of zone boundary K1 phonon mode whose softening under strain is responsible for graphene failure. Electrons and holes work in the same way due to the high electron-hole symmetry around the Dirac point of graphene, while over do** may weaken the graphene by softening other phonon modes. Our findings uncover another fascinating property of graphene with broad implications in graphene-based electromechanical devices.
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Submitted 31 October, 2012;
originally announced October 2012.
