Showing 1–50 of 76 results for author: Shur, M

Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ul… ▽ More We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 9 pages, 11 figures

Terahertz plasmonic resonances in coplanar graphene nanoribbon structures

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, M. S. Shur

Abstract: We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic… ▽ More We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron and hole inductances and the lateral inter-CNR capacitance. A relatively low inter-GNR capacitance enables the resonant excitation of the THz plasmonic oscillations in the CNR structures with long GNRs. The GNR structures under consideration can be used in different THz devices as the resonant structures incorporated in THz detectors, THz sources using resonant-tunneling diodes, photomixers, and surface acoustic wave sensors. △ Less

Submitted 9 March, 2024; v1 submitted 6 February, 2024; originally announced February 2024.

Comments: 8 pages, 4 figures

Journal ref: J. Appl. Phys. 135, 114503 (2024)

Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

Authors: G. Simin, M. Shur

Abstract: Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field… ▽ More Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field and not by the electron sheet density. As a result, the breakdown field at low sheet carrier densities increases by approximately 36% or even more because the quantization leads to an effective increase in the energy gap. In addition, better confinement increases the electron mobility at low sheet carrier densities by approximately 50%. Another advantage is the possibility of increasing the aluminum molar fraction in the barrier layer because a very thin layer prevents material relaxation and the development of dislocation arrays. This makes the QC especially suitable for high-voltage, high-frequency, high-temperature, and radiation-hard applications. △ Less

Submitted 18 October, 2023; originally announced November 2023.

Comments: 7 pages 6 figures

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector… ▽ More We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence. △ Less

Submitted 15 October, 2023; originally announced October 2023.

Comments: 5 pages, 4 figures

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, S. G. Kalenkov, V. Mitin, M. S. Shur

Abstract: We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optic… ▽ More We investigate the response of the micromechanical field-effect transistors (MMFETs) to the im**ing terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 8 pages, 3 figures

Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances

Authors: M. Ryzhii, V. Ryzhii, M. S. Shur, V. Mitin, C. Tang, T. Otsuji

Abstract: We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short sect… ▽ More We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Boron Nitride black-Phosphorus/ hexagonal-Boron Nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated values of the room-temperature GC-FET THz detector responsivity and other characteristics, especially at the plasmonic resonances. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 9 pages, 8 figures

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to a… ▽ More We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As$_x$P$_{1-x}$ energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As$_x$P$_{1-x}$ atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of $10^3$~A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures. △ Less

Submitted 23 April, 2023; originally announced April 2023.

Comments: 13 pages, 5 figures

Report number: 2304.11635

Journal ref: Sci Rep 13, 9665 (2023)

Plasma Instability and Amplified Mode Switching Effect in THz Field Effect Transistors with Grating Gate

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability in the plasmonic crystal formed in the transistor channel develops due to conversion of the kinetic energy carried by the drifting plasmons into electromagnetic… ▽ More We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability in the plasmonic crystal formed in the transistor channel develops due to conversion of the kinetic energy carried by the drifting plasmons into electromagnetic energy. The conversion happens at the opposite sides of the gate fingers due to the asymmetry produced by the current flow and occurs through the gate finger fringing capacitances. The key feature of the proposed instability mechanism is the behavior of the plasma frequency peak and its width as functions of the dc current bias. At a certain critical value of the current, the plasma resonant peak with small instability increment experiencing redshift with increasing current changes to the blue shifting peak with large instability increment. This amplified mode switching (AMS) effect has been recently observed in graphene-interdigitated structures (S. Boubanga-Tombet et al., Phys. Rev. X 10, 031004 (2020)). The obtained theoretical results are in very good qualitative agreement with these experiments and can be used in future designs of the compact sources of THz EM radiation. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 15 pages, 6 figures

Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to… ▽ More We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC-FETs can operate as bolometric THz detectors using the thermionic emission of the hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by the THz signals, the GC-FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG can markedly affect the GC-FET responsivity, in particular, its spectral characteristics. This effect should be considered for the optimization of the GC-FET detectors. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 3 figures

Report number: arXiv:2303.08492

Journal ref: Phys. Rev. Applied 19, 064033 (2023)

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

Authors: V. Ryzhii, C. Tang, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by im**ing THz radiation leading to thermionic emissi… ▽ More We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by im**ing THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large. △ Less

Submitted 24 April, 2023; v1 submitted 15 March, 2023; originally announced March 2023.

Comments: 8 pages, 4 figures

Report number: 2303.08488

Journal ref: J. Appl. Phys. 133, 174501 (2023)

Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener-Klein interband tunneling

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the… ▽ More The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals. The transit time delay of the tunneling electrons and holes in the depletion regions leads to the phase shift between the THz current and THz voltage causing the negative dynamic conductance in a certain frequency range and resulting in the so-called transit-time (TT) instability. The combination of the ZK tunneling and the TT negative dynamic conductance enables resonant THz detection and the amplification and generation of THz radiation. We propose and evaluate the THz devices based on periodic cascade GL p-i-n structures exhibiting the TT resonances (GPIN-TTDs). Such structures can serve as THz amplifiers and, being placed in a Fabri-Perot cavity, or coupled to a THz antenna or using a ring oscillator connection, as THz radiation sources. △ Less

Submitted 29 August, 2022; originally announced August 2022.

Comments: 13 pages, 9 figures

Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated… ▽ More We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated regions serve as the electron and hole reservoirs and the THz resonant plasma cavities. The resonant excitation of the electron and hole plasmonic oscillations results in a substantial increase in the THz detector responsivity at the signal frequency close to the plasma frequency and its harmonics. Due to the specifics of the i-region AC conductance frequency dependence, associated with the transit-time effects, the GPIN-FET response at the frequency, corresponding to the excitation of a higher plasmonic mode, can be stronger than for the fundamental mode. The GPIN-FETs can exhibit fairly high responsivity at room temperatures. Lowering of the latter can result in its further enhancement due to weakening of the carrier momentum relaxation. △ Less

Submitted 10 September, 2022; v1 submitted 21 June, 2022; originally announced June 2022.

Comments: 13 pages, 5 figures

Report number: 2206.1021

Journal ref: Phys.Rev.Applied 18, 034022 (2022)

Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

Authors: V. Ryzhii, M. Ryzhii, A. Satou, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the… ▽ More We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters. △ Less

Submitted 20 October, 2021; originally announced October 2021.

Comments: 8 pages, 4 figures

Report number: 2110.10479

Journal ref: Phis. Stat. Sol. A 2021, 2100694

Giant Inverse Faraday Effect in Plasmonic Crystal Ring

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: Circularly polarized electromagnetic wave im**ing on a conducting ring generates a circulating DC plasmonic current resulting in an Inverse Faraday Effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When a circularly polarized radiation im**es on such a plasmoni… ▽ More Circularly polarized electromagnetic wave im**ing on a conducting ring generates a circulating DC plasmonic current resulting in an Inverse Faraday Effect in nanorings. We show that a large ring with periodically modulated width on a nanoscale, smaller or comparable with the plasmonic mean free path, supports plasmon energy bands. When a circularly polarized radiation im**es on such a plasmonic ring, it produces resonant DC plasmonic current on a macro scale resulting in a Giant Inverse Faraday Effect. The metamaterials comprised of the concentric variable width rings (plasmonic disks) and stacked plasmonic disks (plasmonic solenoids) amplify the generated constant magnetic field by orders of magnitude. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 14 pages, 3 figures

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

Authors: V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions… ▽ More We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Comments: 9 pages, 7 figures

Report number: 2109.0073

Journal ref: Phys.Rev.Applied 16, 064054 (2021)

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injec… ▽ More We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electrons Fermi energy (i.e., by their density). The conditions of the terahertz plasma oscillation self-excitation can be realized in the G-FETs with realistic structural parameters at room temperature enabling the potential G-FET-based radiation sources for the THz applications. △ Less

Submitted 29 June, 2021; originally announced June 2021.

Comments: 5 pages, 3 figures

Report number: 2106.15204

Journal ref: Appl. Phys.Lett, 119,093501 (2021)

S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current… ▽ More We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphene field-effect transistors (G-FET) might lead to a substantial Coulomb drag of the quasi-equilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in the S-shaped current-voltage characteristics (IVs). The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage switching devices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for an effective frequency multiplication and detection of terahertz radiation. △ Less

Submitted 13 July, 2021; v1 submitted 9 April, 2021; originally announced April 2021.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Applied 16, 014001 (2021)

Modulation characteristics of uncooled graphene photodetectors

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Leiman, V. Mitin, M. S. Shur

Abstract: We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PG… ▽ More We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization. △ Less

Submitted 1 February, 2021; originally announced February 2021.

Comments: 10 pages, 3 figures

Report number: 2102.01299

Journal ref: J. Appl. Phys. 129, 214503 (2021)

Heat capacity of nonequilibrium electron-hole plasma in graphene layers and graphene~bilayers

Authors: V. Ryzhii, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur

Abstract: We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier hea… ▽ More We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \simeq 2.37$ at $T \lesssim 300$~K to $c_{GBL} \simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical two-dimensional carriers with $c = 1$. The obtained results can be useful for the optimization of different GL- and GBL-based high-speed devices. △ Less

Submitted 7 November, 2020; originally announced November 2020.

Comments: 6 pages, one figure

Journal ref: Phys. Rev. B 103, 245414 (2021)

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

Authors: V Ryzhii, T Otsuji, M Ryzhii, V Leiman, P P Maltsev, V E Karasik, V Mitin, M S Shur

Abstract: We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) gener… ▽ More We develop the device model for the proposed injection (electrically) driven thermal light emitters (IDLEs) based on the vertical Hexagonal Boron Nitride Layer/Graphene Layer/ Hexagonal Boron Nitride Layer (hBNL/GL/hBNL) heterostructures and analyze their dynamic response. The operation of the IDLEs is associated with the light emission of the hot two-dimensional electron-hole plasma (2DEHP) generated in the GL by both the lateral injection from the side contacts and the vertical injection through the hBNL (combined injection) heating the 2DEHP. The temporal variation of the injection current results in the variation of the carrier effective temperature and their density in the GL leading to the modulation of the output light. We determine the mechanisms limiting the IDLE efficiency and the maximum light modulation frequency. A large difference between the carrier and lattice temperatures the IDLEs with an effective heat removal enables a fairly large modulation depth at the modulation frequencies about dozen of GHz in contrast to the standard incandescent lamps. We compare the IDLEs with the combined injection under consideration and IDLEs using the carrier Joule heating by lateral current. The obtained results can be used for the IDLE optimization. △ Less

Submitted 10 October, 2020; originally announced October 2020.

Comments: 19 pages, 6 figures

High Brightness Lasing at Sub-micron Enabled by Droop-Free Fin Light-Emitting Diodes

Authors: Babak Nikoobakht, Robin P. Hansen, Yuqin Zong, Amit Agrawal, Michael Shur, Jerry Tersoff

Abstract: Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range. Here we present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LEDs brightness to increase linearly with injected current. With record… ▽ More Efficiency droop, i.e., a decline in brightness of LEDs at high electrical currents, has limited the performance of all commercially available LEDs. Until now, it has limited the output power of sub-micron LEDs and lasers to nanowatt range. Here we present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LEDs brightness to increase linearly with injected current. With record current densities of 1000 KA/cm2 (100 mA), the LEDs transition to lasing within the fin, with high brightness. Despite a light extraction efficiency of only 15%, these devices exceed the output power of any previous electrically-driven sub-micron LED or laser pixel by 100 to 1000 times, while showing comparable external quantum efficiencies. Modeling suggests that spreading of the electron-hole recombination region in fin LEDs at high injection levels suppresses the non-radiative Auger recombination processes. Further refinement of this design is expected to enable development of a new generation of high brightness electrically addressable LED and laser pixels for macro- and micro-scale applications. △ Less

Submitted 20 June, 2020; originally announced July 2020.

Comments: 32 pages, 5 figures

Plasmonic Instabilities in Two-dimensional Electron Channels of Variable Width

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both th… ▽ More Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both the Dyakonov-Shur instability (when the electron drift velocity everywhere in the device remains smaller than the plasma velocity) and the "plasmonic boom" instability that requires drift velocity exceeding the plasma velocity in some of the device sections. For symmetrical structures, the drifting current could be provided by an RF signal leading to RF to THz and THz to RF frequency conversion using the source and drain antennas and reducing losses associated with ohmic contacts. We show that narrow regions protruding from the channel ("plasmonic stubs") could control and optimize boundary conditions at the contacts and/or at the interfaces between different device sections. These sections could be combined into plasmonic crystals yielding enhanced power and a better impedance matching. The mathematics of the problems is treated using the transmission line analogy. We show that the combination of the stubs and the variable width channels is required for the instability rise in an optimized plasmonic crystal. Our estimates show that THz plasmonic crystal oscillators could operate at room temperature. △ Less

Submitted 4 April, 2020; originally announced April 2020.

Comments: 15 pages,10 figures

Journal ref: Phys. Rev. B 101, 245404 (2020)

Hydrodynamic Inverse Faraday Effect in Two Dimensional Electron Liquid

Authors: S. O. Potashin, V. Yu. Kachorovskii, M. S. Shur

Abstract: We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive cir… ▽ More We show that a small conducting object, such as a nanosphere or a nanoring, embedded into or placed in the vicinity of the two-dimensional electron liquid (2DEL) and subjected to a circularly polarized electromagnetic radiation induces ``twisted'' plasmonic oscillations in the adjacent 2DEL. The oscillations are rectified due to the hydrodynamic nonlinearities leading to the helicity sensitive circular dc current and to a magnetic moment. This hydrodynamic inverse Faraday effect (HIFE) can be observed at room temperature in different materials. The HIFE is dramatically enhanced in a periodic array of the nanospheres forming a resonant plasmonic coupler. Such a coupler exposed to a circularly polarized wave converts the entire 2DEL into a vortex state. Hence, the twisted plasmonic modes support resonant plasmonic-enhanced gate-tunable optical magnetization. Due to the interference of the plasmonic and Drude contributions, the resonances have an asymmetric Fano-like shape. These resonances present a signature of the 2DEL properties not affected by contacts and interconnects and, therefore, providing the most accurate information about the 2DEL properties. In particular, the widths of the resonances encode direct information about the momentum relaxation time and viscosity of the 2DEL. △ Less

Submitted 10 August, 2020; v1 submitted 22 January, 2020; originally announced January 2020.

Comments: 18 pages, 8 figures, 2 tables, replaced with published version

Journal ref: Phys. Rev. B 102, 085402 (2020)

TCAD model for TeraFET detectors operating in a large dynamic range

Authors: Xueqing Liu, Michael S. Shur

Abstract: We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analyt… ▽ More We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Comments: 5 pages, 9 figures

Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode

Authors: Victor Ryzhii, Maxim Ryzhii, Taiichi Otsuji, Valery E. Karasik, Vladimir G. Leiman, Vladimir Mitin, Michael S. Shur

Abstract: We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by… ▽ More We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as an active part of the terahertz (THz) laser using the interband radiative transitions in the GL. The feasibility of the proposed concept is enabled by the combination of relatively narrow energy gap in the b-As$_{1-x}$P$_x$L and the proper band alignment with the GL. The operation of the device in question is associated with the generation of the electron-hole pairs by the LED emitted near-infrared radiation in the b-As$_{1-x}$P$_x$L, cooling of the photogenerated electrons and holes in this layer, and their injection into the GL. Since the minimum b-As$_{1-x}$PL energy gap is smaller than the energy of optical phonons in the GL, , the injection into the GL can lead to a relatively weak heating of the two-dimensional electron-hole plasma (2D-EHP) in the GL. At the temperatures somewhat lower than the room temperature, the injection can cool the 2D-EHP. This is beneficial for the interband population inversion in the GL, reinforcement of its negative dynamic conductivity, %in the THz range and the realization of the optical and plasmonic modes lasing supporting the new types of the THz radiation sources. △ Less

Submitted 30 January, 2019; originally announced January 2019.

Comments: 10 pages, 4 figures

Terahertz Plasmonic Detector Controlled by Phase Asymmetry

Authors: I. V. Gorbenko, V. Yu. Kachorovskii, Michael Shur

Abstract: We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the Ter… ▽ More We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz range of frequencies. We also propose an effective scheme of a phase-sensitive homodyne detector operating in a phase-asymmetry mode, which allows for a dramatic enhancement of the response. These regimes can be implemented in different materials systems including silicon. The p-diamond TeraFETs could support operation in the 200 to 600 GHz atmospheric windows. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 9 pages, 7 figures

Amplification of surface plasmons in graphene-black phosphorus injection laser heterostructures

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, A. A. Dubinov, V. Ya. Aleshkin, V. E. Karasik, M. S. Shur

Abstract: We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about… ▽ More We propose and evaluate the heterostructure based on the graphene-layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (PL) (p$^+$PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simplifies the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the amplification of the surface plasmon modes. The later can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for a new types of the THz sources. △ Less

Submitted 2 January, 2019; originally announced January 2019.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 100, 115436 (2019)

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

Authors: V. Ryzhii, M. Ryzhii, D. S. Ponomarev, V. G. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with t… ▽ More We consider the effect of terahertz (THz) radiation on the conductivity of the ungated and gated graphene (G)-phosphorene (P) hybrid structures and propose and evaluated the hot-carrier uncooled bolometric photodetectors based on the GP-lateral diodes (GP-LDs) and GP-field-effect transistors (GP-FETs) with the GP channel. The operation of the GP-LDs and GP-FET photodetectors is associated with the carrier heating by the incident radiation absorbed in the G-layer due to the intraband transitions. The carrier heating leads to the relocation of a significant fraction of the carriers into the P-layer. Due to a relatively low mobility of the carriers in the P-layer, their main role is associated with a substantial reinforcement of the scattering of the carriers. The GP-FET bolometric photodetector characteristics are effectively controlled by the gate voltage. A strong negative conductivity of the GP-channel can provide much higher responsivity of the THz hot-carriers GP-LD and GP-FET bolometric photodetectors in comparison with the bolometers with solely the G-channels. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 12 pages, 5 figures

Plasmonic Helicity-Driven Detector of terahertz radiation

Authors: I. V. Gorbenko, V. Yu. Kachorovskii, M. S. Shur

Abstract: We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function… ▽ More We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic resonances and oscillates with the phase shift between excitation signals on the source and drain. The resonance line shape is an asymmetric function of the frequency deviation from the resonance. In contrast, the helicity-insensitive part of the response is symmetrical. These properties yield significant advantage for using plasmonic detectors as terahertz and far infrared spectrometers and interferometers. △ Less

Submitted 14 July, 2018; originally announced July 2018.

Comments: 5 pages, 2 figures

Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, P. P. Maltsev, D. S. Ponomarev, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstra… ▽ More We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 11 pges, 8 figures

Plasmons in ballistic nanostructures with stubs: transmission line approach

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of develo** sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and generation is assuring proper boundary conditions at the contacts and at the heterointerfaces and tuning the plasma velocity. We propose using the tunable narrow cha… ▽ More The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of develo** sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and generation is assuring proper boundary conditions at the contacts and at the heterointerfaces and tuning the plasma velocity. We propose using the tunable narrow channel regions of an increased width, which we call "stubs" for optimizing the boundary conditions and for controlling the plasma velocity. We developed a compact model for THz plasmonic devices using the transmission line (TL) analogy. The mathematics of the problem is similar to the mathematics of a TL with a stub. We applied this model to demonstrate that the stubs could effectively control the boundary conditions and/or the conditions at interfaces. We derived and solved the dispersion equation for the device with the stubs and showed that periodic or aperiodic systems of stubs allow for slowing down the plasma waves in a controllable manner in a wide range. Our results show that the stub designs provide a way to achieve the optimum boundary conditions and could also be used for multi finger structures - stub plasmonic crystals - yielding better performance of THz electronic detectors, modulators, mixers, frequency multipliers and sources. △ Less

Submitted 2 June, 2018; originally announced June 2018.

Comments: 13 pages, 9 figures

Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

Authors: V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostr… ▽ More We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A$_3$B$_5$ heterostructures. △ Less

Submitted 23 January, 2018; originally announced January 2018.

Comments: 6 pages, 6 figures

Device model for pixelless infrared image up-converters based on polycrystalline graphene heterostructures

Authors: V. Ryzhii, M. S. Shur, M. Ryzhii, V. E. Karasik, T. Otsuj

Abstract: We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR du… ▽ More We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the nonuniform photocurrent into the LED active layer results in the nonuniform NIR/VIR image reproducing the FIR/MIR image. The PGL and the entire layer structure are not deliberately partitioned into pixels. We analyze the characteristics of such pixelless PGLIP-LED up-converters and show that their image contrast transfer function and the up-conversion efficiency depend on the PGL lateral resistivity. The up-converter exhibits high photoconductive gain and conversion efficiency when the lateral resistivity is sufficiently high. Several teams have successfully demonstrated the large area PGLs with the resistivities varying in a wide range. Such layers can be used in the pixelless PGLIP-LED image up-converters. The PGLIP-LED image up-converters can substantially surpass the image up-converters based on the quantum-well infrared photodetector (QWIP) integrated with the LED. These advantages are due to the use of the interband FIR/NIR absorption and a high photoconductive gain in the GLIPs. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Comments: 11 pages, 6 figures

Effect of do** on the characteristics of infrared photodetectors based on van der Waals~heterostructures with multiple graphene layers

Authors: V. Ryzhii, M. Ryzhii, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon a… ▽ More We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective do** of the inter-GL barrier layers and the GL do** lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the do** of GLs solely results in a substantial increase in the GLIP detectivity. The do** "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of radiation spectrum from near infrared to terahertz. △ Less

Submitted 13 May, 2017; originally announced May 2017.

Comments: 10 pages, 7 figures

Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals

Authors: Aleksandr S. Petrov, Dmitry Svintsov, Victor Ryzhii, Michael S. Shur

Abstract: We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based o… ▽ More We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified reflection of the small density perturbations from the gated/ungated boundaries under the proper phase matching conditions between the crystal unit cells. Based on the transfer-matrix formalism, we derive the generic dispersion equation for the travelling plasmons in these structures. Its solution in the hydrodynamic limit shows that the threshold drift velocity for the instability can be tuned below the plasmon phase and carrier saturation velocities, and the plasmon increment can exceed the collisional dam** rate typical to III-V semiconductors at 77 K and graphene at room temperature. △ Less

Submitted 22 October, 2016; originally announced October 2016.

Comments: 8 pages, 6 figures, 1 appendix

Journal ref: Phys. Rev. B 95, 045405 (2017)

Low-Frequency Electronic Noise in Exfoliated Quasi-1D TaSe3 van Der Waals Nanowires

Authors: Guanxiong Liu, Sergey Rumyantsev, Matthew A. Bloodgood, Tina T. Salguero, Michael Shur, Alexander A. Balandin

Abstract: We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, compared to carbon nanotubes and graphene. The temper… ▽ More We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, compared to carbon nanotubes and graphene. The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f^2-type as temperature increases to about 400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta- Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately E_P=1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is E_A=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications. △ Less

Submitted 16 October, 2016; originally announced October 2016.

Comments: 22 pages; 6 figures

Journal ref: Nano Letters, 17, 377 (2017)

Infrared photodetectors based on graphene van der Waals heterostructures

Authors: V. Ryzhii, M. Ryzhii, D. Svintsov, V. Leiman, V. Mitin, M. S. Shur, T. Otsuji

Abstract: We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the deve… ▽ More We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: 14 pages, 7 figures

Plasmonic shock waves and solitons in a nanoring

Authors: K. L. Koshelev, V. Yu. Kachorovskii, M. Titov, M. S. Shur

Abstract: We apply the hydrodynamic theory of electron liquid to demonstrate that a circularly polarized radiation induces the diamagnetic, helicity-sensitive dc current in a ballistic nanoring. This current is dramatically enhanced in the vicinity of plasmonic resonances. The resulting magnetic moment of the nanoring represents a giant increase of the inverse Faraday effect. With increasing radiation inten… ▽ More We apply the hydrodynamic theory of electron liquid to demonstrate that a circularly polarized radiation induces the diamagnetic, helicity-sensitive dc current in a ballistic nanoring. This current is dramatically enhanced in the vicinity of plasmonic resonances. The resulting magnetic moment of the nanoring represents a giant increase of the inverse Faraday effect. With increasing radiation intensity, linear plasmonic excitations evolve into the strongly non-linear plasma shock waves. These excitations produce a series of the well resolved peaks at the THz frequencies. We demonstrate that the plasmonic wave dispersion transforms the shock waves into solitons. The predicted effects should enable multiple applications in a wide frequency range (from the microwave to terahertz band) using optically controlled ultra low loss electric, photonic and magnetic devices. △ Less

Submitted 6 January, 2017; v1 submitted 20 June, 2016; originally announced June 2016.

Comments: 13 pages, 12 figures

Journal ref: Phys. Rev. B 95, 035418 (2017)

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p-n junctions

Authors: V Ryzhii, M Ryzhii, M S Shur, V Mitin, A Satou, T Otsuji

Abstract: We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes a… ▽ More We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET- and PGL-FET detectors is associated with the rectification of the ac current across the lateral p-n junction enhanced by the excitation of bound plasmonic oscillations in in the p- and n-sections of the channel. Using the developed device model, we find the GL-FET and PGL-FET-detectors characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p-n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity. △ Less

Submitted 17 April, 2016; originally announced April 2016.

Comments: 13 pages, 8 figures

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, G. Fedorov, G. N. Goltzman, I. A. Gayduchenko, N. Titova, D. Coquillat, D. But, W. Knap, V. Mitin, M. S. Shur

Abstract: We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT netw… ▽ More We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the another contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the two-dimensional plasmons in relatively dense networks of randomly oriented CNTs (CNT "felt") and predicts the detector responsivity spectral characteristics. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. We demonstrate that the excitation of the two-dimensional plasmons by incoming THz radiation the detector responsivity can induce sharp resonant peaks of the detector responsivity at the signal frequencies corresponding to the plasmonic resonances. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. △ Less

Submitted 17 February, 2016; originally announced February 2016.

Comments: 15 pages, 9 figures

New Optical Gating Technique for Detection of Electric Field Waveforms with Subpicosecond Resolution

Authors: A. Muraviev, A. Gutin, G. Rupper, S. Rudin, X. Shen, Y. Yamaguchi, G. Aizin, M. Shur

Abstract: We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to the THz pulse generated a large concentration of the electron hole pairs in the AlGaAs/InGaAs High Electron Mobility Transistor (HEMT) drastically increasing th… ▽ More We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to the THz pulse generated a large concentration of the electron hole pairs in the AlGaAs/InGaAs High Electron Mobility Transistor (HEMT) drastically increasing the conductivity on the femtosecond scale and effectively shorting the source and drain. This optical gating quenched the response of the plasma waves launched by the THz pulse and allowed us to reproduce the waveform of the THz pulse by varying the time delay between the THz and quenching optical pulses. The results are in excellent agreement with the electro-optic effect measurements and with our hydrodynamic model that predicts the ultra-fast transistor plasmonic response at the time scale much shorter than the electron transit time, in full agreement with the measured data. △ Less

Submitted 14 January, 2016; originally announced January 2016.

Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

Authors: V. Ryzhii, T. Otsuji, M. Ryzhii, V. Mitin, M. S. Shur

Abstract: We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations o… ▽ More We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations of the electric potential and the hole density in the GB (plasma oscillations), as well as the quantum capacitance and the electron transit-time effects. Using the proposed device model, we calculate the responsivity of GB-HETs operating as THz detectors as a function of the signal frequency, applied bias voltages, and the structural parameters. The inclusion of the plasmonic effect leads to the possibility of the HET-GBT operation at the frequencies significantly exceeding those limited by the characteristic RC-time. It is found that the responsivity of GB-HETs with a sufficiently perfect GB exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The GB-HETs can compete with and even surpass other plasmonic THz detectors. △ Less

Submitted 10 September, 2015; originally announced September 2015.

Comments: 10 pages, 4 figures

Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

Authors: V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

Abstract: Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote do** enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore such remote… ▽ More Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote do** enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore such remote do** helps surpassing the intraband (Drude) absorption and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared to previously proposed GBL-based THz lasers. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Comments: 9 pages. 8 figures

Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

Authors: G. Liu, S. L. Rumyantsev, C. Jiang, M. S. Shur, A. A. Balandin

Abstract: We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes i… ▽ More We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing. △ Less

Submitted 1 July, 2015; originally announced July 2015.

Comments: 3 pages; 4 figures

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

Authors: Maxim A. Stolyarov, Guanxiong Liu, Sergey L. Rumyantsev, Michael Shur, Alexander A. Balandin

Abstract: We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room tempera… ▽ More We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 μm2 Hz^-1, which is a factor of x5 - x10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene. △ Less

Submitted 12 June, 2015; originally announced June 2015.

Comments: 19 pages, 5 figures

Journal ref: Applied Physics Letters, 107, 023106 (2015)

Current driven "plasmonic boom" instability in three-dimensional gated periodic ballistic nanostructures

Authors: G. R. Aizin, J. Mikalopas, M. Shur

Abstract: A new approach of using distributed transmission line analogy for solving transport equations for ballistic nanostructures is applied for solving the three dimensional problem of the electron transport in gated ballistic nanostructures with periodically changing width. The structures with the varying width allow for modulation of the electron drift velocity while kee** the plasma velocity consta… ▽ More A new approach of using distributed transmission line analogy for solving transport equations for ballistic nanostructures is applied for solving the three dimensional problem of the electron transport in gated ballistic nanostructures with periodically changing width. The structures with the varying width allow for modulation of the electron drift velocity while kee** the plasma velocity constant. We predict that in such structures biased by a constant current, a periodic modulation of the electron drift velocity due the varying width results in the instability of the plasma waves if the electron drift velocity to plasma wave velocity ratio changes from below to above unity. The physics of such instability is similar to that of the sonic boom, but, in the periodically modulated structures, this analog of the sonic boom is repeated many times leading to a larger increment of the instability. The constant plasma velocity in the sections of different width leads to the resonant excitation of the unstable plasma modes with the varying bias current. This effect (that we refer to as the super plasmonic boom condition) results in a strong enhancement of the instability. The predicted instability involves the oscillating dipole charge carried by the plasma waves. The plasmons can be efficiently coupled to the terahertz (THz) electromagnetic radiation due to the periodic geometry of the gated structure. Our estimates show that the analyzed instability should enable powerful tunable terahertz electronic sources. △ Less

Submitted 30 July, 2015; v1 submitted 10 June, 2015; originally announced June 2015.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. B 93, 195315 (2016)

Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

Authors: S. L. Rumyantsev, C. Jiang, R. Samnakay, M. S. Shur, A. A. Balandin

Abstract: We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 tr… ▽ More We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with "thick" channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 thin-film transistors. △ Less

Submitted 5 March, 2015; originally announced March 2015.

Comments: 12 pages, 3 figures

Journal ref: IEEE Electron Device Letters, 36, 517 (2015)

Negative terahertz conductivity in disordered graphene bilayers with population inversion

Authors: D. Svintsov, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Abstract: The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pum** to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer struct… ▽ More The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pum** to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer structures on high-$κ$ substrates with point charged defects, these transitions almost fully compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters, surface corrugation, and nanoholes) can surpass by several times the fundamental limit associated with the direct interband transitions and the Drude conductivity. These predictions can affect the strategy of the graphene-based THz laser implementation. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: 5 pages, 4 figures

High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

Authors: C. Jiang, S. L. Rumyantsev, R. Samnakay, M. S. Shur, A. A. Balandin

Abstract: The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS… ▽ More The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors. △ Less

Submitted 20 December, 2014; originally announced December 2014.

Comments: 22 pages, 8 figures

Journal ref: Journal of Applied Physics, 117, 064301 (2015)

Ratchet effect enhanced by plasmons

Authors: I. V. Rozhansky, V. Yu. Kachorovskii, M. S. Shur

Abstract: Ratchet effect -- a {\it dc} current induced by the electromagnetic wave im**ing on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicin… ▽ More Ratchet effect -- a {\it dc} current induced by the electromagnetic wave im**ing on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicinity of the plasmonic resonances and has nontrivial polarization dependence. In particular, for circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. Remarkably, in the high-mobility structures, this component might be much larger than the the current component in the modulation direction. We also discuss the non-resonant regime realized in dirty systems, where the plasma resonances are suppressed, and demonstrate that the non-resonant ratchet current is controlled by the Maxwell relaxation in the 2D liquid. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Comments: 6 pages, 2 figures